阅读说明：本技术 异质复合物及异质复合物的制造方法 (Hetero-composite and method for producing hetero-composite ) 是由 金度延 许弼覠 黄浩钟 尹铉 李钟民 白哲均 于 2021-06-02 设计创作，主要内容包括：本发明提供了异质复合物及异质复合物的制造方法。异质复合物包括：第一压缩结构体,其通过压缩第一材料来形成；第二压缩结构体,其通过压缩与第一材料不同的第二材料形成,并且与第一压缩结构体紧贴地布置,其中,第一压缩结构体的至少一部分与第二压缩结构体的至少一部分以在以中心轴为基准具有恒定半径的圆形界面彼此接触的状态布置在界面的两侧。(The invention provides a hetero-composite and a method for manufacturing the hetero-composite. The heterogeneous composite comprises: a first compressed structure formed by compressing a first material; and a second compression structure body formed by compressing a second material different from the first material and disposed in close contact with the first compression structure body, wherein at least a part of the first compression structure body and at least a part of the second compression structure body are disposed on both sides of a circular interface having a constant radius with respect to the central axis in a state of being in contact with each other.)

1. A heterogeneous composite comprising:

a first compressed structure formed by compressing a first material;

a second compression structure formed by compressing a second material different from the first material and arranged in close proximity to the first compression structure,

wherein at least a part of the first compression structure and at least a part of the second compression structure are arranged on both sides of an interface in a state of contacting each other at the interface, the interface being in a circular shape having a constant radius with reference to a central axis.

2. The heterogeneous composite of claim 1,

the interface includes at least one of a parallel surface parallel to the central axis and an inclined surface formed inclined to the central axis.

3. The heterogeneous composite of claim 1,

the interface includes a plurality of sub-interfaces having different radii with respect to the central axis,

the first portion of the first compressed structural body and the first portion of the second compressed structural body are arranged on both sides of a first sub-interface among the plurality of sub-interfaces in a state of being in contact with each other, and

the second portion of the first compressed structural body and the second portion of the second compressed structural body are arranged on both sides of a second sub-interface among the plurality of sub-interfaces in a state of being in contact with each other at the second sub-interface.

4. The hetero-composite of claim 1 comprising at least one of a mixed layer comprising a mixed layer of a portion of the first compressed structure and a portion of the second compressed structure and a separate layer; and the separate layer comprises only a portion of the first compressed structure or a portion of the second compressed structure.

5. The heterogeneous composite of claim 1,

the first and second compressed structures have different electrical conductivities.

6. The heterogeneous composite of claim 1,

the first compressed structure comprises carbon nanotube-polytetrafluoroethylene, and

the second compression structure comprises polytetrafluoroethylene.

7. A method of manufacturing a heterogeneous composite comprising the steps of:

disposing a frame in a first cavity formed in a mold;

injecting a first material into the space outside the frame in the first cavity;

removing the frame to form a second cavity comprising an interface in contact with the first material;

injecting a second material different from the first material into the second cavity; and

simultaneously compressing the first material and the second material to create a heterogeneous composite,

wherein the interface is a circle having a constant radius with respect to a central axis of the frame, an

At least a portion of the first material and at least a portion of the second material are arranged on both sides of the interface in a state of being in contact with each other at the interface.

8. The method of manufacturing a hetero-composite according to claim 7,

the mold includes an opening corresponding to a side plane of the first cavity,

the first material and the second material are injected through the opening, and

the frame is inserted into or removed from the first cavity through the opening.

9. The method of manufacturing a hetero-composite according to claim 7,

the first material and the second material are injected into the mold in the form of powder.

10. The method of manufacturing a hetero-composite according to claim 7,

at least one of a mixed layer and a separate layer are disposed in the mold, the mixed layer including the first material and the second material; and the separate layer comprises only the first material or the second material.

11. The method of manufacturing a hetero-composite according to claim 7,

the first material and the second material are injected in the form of powder.

12. The method of manufacturing a hetero-composite according to claim 7,

the first material and the second material have different electrical conductivities.

13. The method of manufacturing a hetero-composite according to claim 7,

the first material includes carbon nanotube-polytetrafluoroethylene, and

the second material comprises polytetrafluoroethylene.

14. The method of manufacturing a hetero-composite according to claim 7,

the frame includes a boundary side forming the interface, an

The boundary side includes at least one of a parallel surface parallel to a central axis of the frame and an inclined surface formed inclined to the central axis of the frame.

15. The method of manufacturing a hetero-composite according to claim 7,

the frame includes a plurality of sub-frames having boundary sides with different radii with reference to a central axis of the frame,

the first portion of the first material and the first portion of the second material are disposed on both sides with respect to a first interface formed by a boundary side of a first sub-frame of the plurality of sub-frames, and

the second portion of the first material and the second portion of the second material are disposed on both sides with respect to a second interface formed by a boundary side of a second subframe of the plurality of subframes.

16. A method of manufacturing a heterogeneous composite comprising the steps of:

disposing a frame having a cylindrical or hollow-type cylindrical shape in a first cavity formed in a mold and having a cylindrical or hollow-type cylindrical shape;

injecting a first material in powder form into the space outside the frame in the first cavity;

removing the frame to form a second cavity comprising an interface in contact with the first material;

injecting a second material in a powder form different from the first material into the second cavity; and

simultaneously compressing the first material and the second material to create a heterogeneous composite,

wherein the mold includes an opening corresponding to a side plane of the first cavity, and the first material and the second material are injected through the opening, and the frame is inserted into or removed from the first cavity through the opening,

the frame is disposed in the first cavity in a state where a central axis of a circular or annular cross section of the frame coincides with a central axis of a circular or annular cross section of the first cavity,

the interface is a circle having a constant radius with respect to a central axis of the circular or annular cross-section of the frame, an

At least a portion of the first material and at least a portion of the second material are arranged on both sides of the interface in a state of being in contact with each other at the interface.

17. The method of manufacturing a hetero-composite according to claim 16,

the first material and the second material have different electrical conductivities.

18. The method of manufacturing a hetero-composite according to claim 16,

the first material includes carbon nanotube-polytetrafluoroethylene, and

the second material comprises polytetrafluoroethylene.

19. The method of manufacturing a hetero-composite according to claim 16,

the frame includes a boundary side forming the interface, an

The boundary side includes at least one of a parallel surface parallel to a central axis of the frame and an inclined surface formed inclined to the central axis of the frame.

20. The method of manufacturing a hetero-composite according to claim 16,

the frame includes a plurality of sub-frames having boundary sides with different diameters with reference to a central axis of the frame,

the first portion of the first material and the first portion of the second material are arranged on both sides with reference to a first interface formed by boundary sides of a first sub frame of the plurality of sub frames, an

The second portion of the first material and the second portion of the second material are arranged on both sides with reference to a second interface formed by a boundary side of a second sub frame of the plurality of sub frames.

Technical Field

The present invention relates to a hetero-composite formed to reduce loss of a material used for manufacturing a component of semiconductor manufacturing equipment, and a method for manufacturing the hetero-composite.

Background

In the field of semiconductor industry, fluororesins having properties such as chemical resistance, heat resistance, and wear resistance are used as materials for manufacturing parts. The fluororesin is a resin containing fluorine in the molecule. The fluorine resins include Polytetrafluoroethylene (PTFE), Polychlorotrifluoroethylene (PCTFE), polyvinylidene fluoride (PVDF), and the like, and among them, polytetrafluoroethylene is mainly used in the semiconductor industry field.

In particular, in order to further improve chemical resistance and abrasion resistance, a member may be manufactured by compression molding, and in this case, CNT-PTFE manufactured by synthesis of carbon nanotubes and polytetrafluoroethylene may be used as a material.

Disclosure of Invention

The technical problem to be solved by the present invention is to provide a hetero-composite formed in order to reduce the loss of materials used for manufacturing a component of semiconductor manufacturing equipment, and a method for manufacturing the hetero-composite.

The technical problems of the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned may be clearly understood by those skilled in the art from the following description.

One aspect of the inventive heterocomplex for achieving the above technical problem comprises: a first compressed structure formed by compressing a first material; a second compression structure body formed by compressing a second material different from the first material and disposed in close contact with the first compression structure body, wherein at least a part of the first compression structure body and at least a part of the second compression structure body are disposed on both sides of a circular interface having a constant radius with respect to a central axis in a state of being in contact with each other.

The interface includes at least one of a parallel surface parallel to the central axis and an inclined surface formed inclined to the central axis.

The interface includes a plurality of sub-interfaces having different radii with reference to the central axis, and a first portion of the first compression structure and a first portion of the second compression structure are arranged on both sides of a first sub-interface among the plurality of sub-interfaces in a state of being in contact with each other, and a second portion of the first compression structure and a second portion of the second compression structure are arranged on both sides of a second sub-interface among the plurality of sub-interfaces in a state of being in contact with each other.

A hetero-composite comprising at least one of a mixed layer comprising a mixed layer of a portion of the first compressed structure and a portion of the second compressed structure and a separate layer; and the separate layer comprises only a portion of the first compressed structure or a portion of the second compressed structure.

The first and second compressed structures have different electrical conductivities.

The first compression structure includes Carbon Nanotube-polytetrafluoroethylene (CNT-PTFE), and the second compression structure includes Polytetrafluoroethylene (PTFE).

An aspect of the method for manufacturing a hetero-composite of the present invention for achieving the above technical problems includes the steps of: disposing a frame in a first cavity formed in a mold; injecting a first material into the space outside the frame in the first cavity; removing the frame to form a second cavity comprising an interface in contact with the first material; injecting a second material different from the first material into the second cavity; and simultaneously compressing the first material and the second material to generate a hetero-composite, wherein the interface is a circle having a constant radius with respect to a central axis of the frame, and at least a portion of the first material and at least a portion of the second material are arranged on both sides of the interface in a state where the interface is in contact with each other.

The mold includes an opening corresponding to one side plane of the first cavity, and the first material and the second material are injected through the opening, and the frame is inserted into or ejected from the first cavity through the opening.

The first material and the second material are injected into the mold in the form of powder.

At least one of a mixed layer and a separate layer are disposed in the mold, the mixed layer including the first material and the second material; and the separate layer comprises only the first material or the second material.

The first material and the second material are injected in the form of powder.

The first material and the second material have different electrical conductivities.

The first material includes Carbon Nanotube-polytetrafluoroethylene (CNT-PTFE; Carbon Nanotube-polytetrafluoroethylene), and the second material includes polytetrafluoroethylene (PTFE; polytetrafluoroethylene).

The frame includes a boundary side forming the interface, and the boundary side includes at least one of a parallel surface parallel to a central axis of the frame and an inclined surface formed inclined to the central axis of the frame.

The frame includes a plurality of sub frames having boundary sides having different radii with reference to a central axis of the frame, and the first portion of the first material and the first portion of the second material are disposed at both sides with reference to a first interface formed by the boundary sides of a first sub frame of the plurality of sub frames, and the second portion of the first material and the second portion of the second material are disposed at both sides with reference to a second interface formed by the boundary sides of a second sub frame of the plurality of sub frames.

Another aspect of the method for manufacturing a hetero-composite of the present invention for achieving the above technical problems includes the steps of: disposing a frame having a shape of a cylinder or a hollow-type cylinder in a first cavity formed in a mold and having a shape of a cylinder or a hollow-type cylinder; injecting a first material in powder form into the space outside the frame in the first cavity; removing the frame to form a second cavity comprising an interface in contact with the first material; injecting a second material in a powder form different from the first material into the second cavity; and simultaneously compressing the first material and the second material to generate a heterogeneous composite, wherein the mold includes an opening corresponding to one side plane of the first cavity, and the first material and the second material are injected through the opening, and the frame is inserted into or discharged from the first cavity through the opening, and the frame is disposed in the first cavity in a state in which a central axis of a circular or annular cross section of the frame coincides with a central axis of a circular or annular cross section of the first cavity, and the interface is a circle having a constant radius with respect to the central axis of the circular or annular cross section of the frame, and at least a portion of the first material and at least a portion of the second material are disposed on both sides of the interface in a state in which the interfaces contact each other.

The first material and the second material have different electrical conductivities.

The first material includes Carbon Nanotube-polytetrafluoroethylene (CNT-PTFE; Carbon Nanotube-polytetrafluoroethylene), and the second material includes polytetrafluoroethylene (PTFE; polytetrafluoroethylene).

The frame includes a boundary side forming the interface, and the boundary side includes at least one of a parallel surface parallel to a central axis of the frame and an inclined surface formed inclined to the central axis of the frame.

The frame includes a plurality of sub frames, wherein the plurality of sub frames have boundary sides having different diameters with reference to a central axis of the frame, and the first portion of the first material and the first portion of the second material are disposed at both sides with reference to a first interface formed by the boundary sides of a first sub frame among the plurality of sub frames, and the second portion of the first material and the second portion of the second material are disposed at both sides with reference to a second interface formed by the boundary sides of a second sub frame among the plurality of sub frames.

Other embodiments are specifically included in the detailed description and the accompanying drawings.

Drawings

Fig. 1 is a flow chart illustrating a method of manufacturing a hetero-composite according to an embodiment of the present invention.

Fig. 2 to 4 are views illustrating a mold having the first cavity of step S110 of fig. 1.

Fig. 5 is a view for explaining the injection of the first material before step S110 of fig. 1.

Fig. 6 is a view for explaining step S110 of fig. 1.

Fig. 7 is a view for explaining step S120 of fig. 1.

Fig. 8 is a view for explaining step S130 of fig. 1.

Fig. 9 and 10 are views for explaining step S140 of fig. 1.

Fig. 11 to 13 are views for explaining the hetero-complex generated by step S150 of fig. 1.

Fig. 14 and 15 are views illustrating a hetero-composite according to several embodiments of the present invention.

Fig. 16 is a view for explaining processing of the hetero-composite to generate a part of the semiconductor manufacturing equipment.

Fig. 17 is a sectional view taken along the line C-C' shown in fig. 16.

Fig. 18 is a view for explaining formation of parts of semiconductor manufacturing equipment from a plurality of materials.

Fig. 19 and 20 are views for explaining that the second cavity is formed by a plurality of sub-frames.

Fig. 21 is a view for explaining that the second material is injected in the mold shown in fig. 19.

Fig. 22 is a view illustrating a hetero-composite generated by the mold shown in fig. 21.

Fig. 23 is a view for explaining that the second cavity is formed by a frame including an inclined surface.

Fig. 24 is a view illustrating a hetero-composite generated by the mold shown in fig. 23.

Description of reference numerals

200. 201: the mold 210: outer side plate

220: bottom plate 230: inner side plate

300: the heterogeneous composite 310: first material

320: second material 400, 700, 800: frame structure

410: outer panel 420: base plate

430: inner side plates 500, 501, 502, 503: heterogeneous complexes

710. 720 and 730: auxiliary frames 600, 601: component of semiconductor manufacturing equipment

Detailed Description

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention and methods of accomplishing the same will become apparent by reference to the following detailed description of the embodiments when taken in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms different from each other, and the embodiments are provided only for the purpose of making the disclosure of the present invention complete and informing a person of ordinary skill in the art to which the present invention pertains of the scope of the present invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

A component or layer being referred to as being "on" or "over" another component or layer includes not only that it be directly over the other component or layer, but also that other layers or components are intervening. In contrast, an element being referred to as being "directly on" or directly above means that there are no other elements or layers intervening.

To easily describe the relative relationship of one element or constituent element to another element or constituent element as shown in the drawings, spatially relative terms "lower", "above", "upper", and the like may be used. It will be understood that the spatially relative terms are terms that also encompass different orientations of the elements in use or operation in addition to the orientation depicted in the figures. For example, when an element shown in the drawings is turned over, an element described as being "below" or "beneath" another element may be located "above" the other element. Thus, the exemplary term "below" can encompass both an orientation of below and above. Elements may also be oriented in other directions and the spatially relative terms may be interpreted according to the orientation.

Although the terms "first", "second", etc. are used to describe various elements, components and/or sections, it is apparent that these elements, components and/or sections are not limited by these terms. These terms are only used to distinguish one element, component, and/or section from another element, component, and/or section. Therefore, the first element, the first component, or the first portion mentioned below may obviously be the second element, the second component, or the second portion within the technical idea of the present invention.

The terminology used in the description is for the purpose of describing the embodiments and is not intended to be limiting of the invention. In this specification, the singular forms also include the plural forms unless specifically mentioned in a sentence. The use of "including" and/or "comprising" in the specification does not exclude the presence or addition of one or more other elements, steps, operations and/or components other than those mentioned.

All terms (including technical and scientific terms) used in the present specification may be used in the same sense as commonly understood by one of ordinary skill in the art to which the present invention belongs, if not otherwise defined. Further, unless specifically defined otherwise, terms defined in commonly used dictionaries are not interpreted as being idealized or overly formal.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings, and in the description with reference to the drawings, the same or corresponding components are given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted.

Fig. 1 is a flow chart illustrating a method of manufacturing a hetero-composite according to an embodiment of the present invention.

Referring to fig. 1, a method of manufacturing a hetero-composite according to an embodiment of the present invention includes the steps of: disposing a frame in a first cavity formed in a mold (S110); injecting a first material into an outer space of the frame (S120); removing the frame to form a second cavity (S130); injecting a second material into the second cavity (S140); and compressing the first material and the second material to generate a hetero-composite (S150).

The method of manufacturing a hetero-composite according to an embodiment of the present invention may be performed by an additional hetero-composite manufacturing apparatus (not shown) fabricated for manufacturing a hetero-composite. The hetero-composite manufacturing apparatus may include at least one accessory equipment (not shown) to generate the hetero-composite. The heterocomposites may be used to produce components suitable for semiconductor manufacturing equipment, but the objects for which the heterocomposites of the present invention are suitable are not limited to components of semiconductor manufacturing equipment.

The respective accessory equipments included in the manufacturing apparatus of the hetero compound can perform the intrinsic works. For example, one accessory equipment may perform one or more of the steps shown in fig. 1, and multiple accessory equipment may perform one of the steps shown in fig. 1.

Hereinafter, each step shown in fig. 1 will be described in detail with reference to fig. 2 to 13.

Fig. 2 to 4 are views showing a mold having a first cavity of step S110 of fig. 1, fig. 5 is a view for explaining injection of a first material before step S110 of fig. 1, fig. 6 is a view for explaining step S110 of fig. 1, fig. 7 is a view for explaining step S120 of fig. 1, fig. 8 is a view for explaining step S130 of fig. 1, fig. 9 and 10 are views for explaining step S140 of fig. 1, and fig. 11 to 13 are views for explaining a hetero-composite generated by step S150 of fig. 1.

Referring to fig. 2 to 4, a mold 200 having a first cavity CV1 may be prepared.

In the present invention, the molds 200, 201 may be provided in the form of a cylinder or a hollow type cylinder. Thus, the first cavity CV1 comprised in the mold 200, 201 may also have the shape of a cylinder or a hollow-type cylinder. Here, the hollow type cylinder means a cylinder having a hollow formed inside.

As for the generation of the hetero compound by the hetero compound manufacturing apparatus, the following compression work of the material may be performed. Since the first cavity CV1 accommodating the material has the shape of a cylinder or a hollow type cylinder, it is possible to transmit uniform force to all the materials accommodated in the first cavity CV1 at the time of the compressing operation.

Fig. 2 shows a mold 200 provided in the form of a hollow type cylinder, and fig. 4 shows a sectional view taken along line a-a' of the mold shown in fig. 2. Fig. 3 shows a mold 201 provided in a cylindrical form.

Hereinafter, the mold 200 provided in the form of a hollow type cylinder will be mainly described.

The mold 200 is configured to include an outer plate 210, a bottom plate 220, and an inner plate 230. The outer plate 210 and the inner plate 230 may be formed to have different diameters with respect to the same central axis Ax. The broad faces of the outer plate 210 and the inner plate 230 may be formed parallel to the central axis Ax. Outer side plate 210 and inner side plate 230 may be connected by a bottom plate 220, and a first cavity CV1 may be formed by outer side plate 210, bottom plate 220, and inner side plate 230. Further, as shown in fig. 3, in the case where the mold 201 is provided in a cylindrical form, the mold 201 may be configured to include an outer side plate 210 and a bottom plate 220, and the first cavity CV1 may be formed by the outer side plate 210 and the bottom plate 220.

Referring again to fig. 2 and 4, the mold 200 may include an opening OP corresponding to one side plane of the first cavity CV 1. For example, the openings OP may be formed on opposite sides of the bottom plate 220. The opening OP may serve as a moving passage of the material and the frame. For example, the first and second materials described below may be injected through the opening OP, and the frame may be inserted into the first cavity CV1 or discharged from the first cavity CV1 through the opening OP.

Referring to fig. 5, a first material 310 may be injected into a first cavity CV1 formed in the mold 200.

The first material 310 may be a fluororesin as a material for generating a hetero-composite. For example, the first material 310 may be Carbon Nanotube-polytetrafluoroethylene (CNT-PTFE; Carbon Nanotube-polytetrafluoroethylene), but the first material 310 of the present invention is not limited to the Carbon Nanotube-polytetrafluoroethylene.

The first material 310 may be injected through the opening OP of the mold 200, and the injected first material 310 may be loaded upward from the bottom of the first cavity CV 1. The first material 310 may not be injected into the entire space of the first cavity CV 1. That is, a portion of the entire space of the first cavity CV1 may not be filled with the first material 310.

As described below, a frame 400 may be disposed in the first cavity CV 1. Fig. 5 shows the first material 310 injected into the first cavity CV1 before the frame 400 is disposed. According to embodiments of the invention, the first material 310 may or may not be injected into the first cavity CV1 or the first cavity CV1 before the frame 400 is disposed. Hereinafter, a case where the first material 310 is injected into the first cavity CV1 before the frame 400 is disposed will be mainly described.

Referring to fig. 6, a frame 400 may be disposed in the first chamber CV 1.

The frame 400 may be inserted into the first cavity CV1 through the opening OP. Since the first cavity CV1 has a hollow cylindrical shape, the frame 400 may also be provided in the shape of a hollow cylindrical shape. That is, the central axis Bx of the frame 400 may coincide with the central axis Ax of the mold 200, and the frame 400 may have a hollow cylindrical shape having a constant diameter with respect to the central axis Bx.

The frame 400 may include an outer side for forming a second cavity CV2 (refer to fig. 8) described below. For example, the cross section of the outer side of the frame 400 may be a quadrangle, in which case the cross section of the second cavity CV2 may be a quadrangle.

The frame 400 is configured to include an outer plate 410, a bottom plate 420, and an inner plate 430. The outer plate 410 and the inner plate 430 may be formed to have different diameters with respect to the same central axis Bx. The broad faces of the outer and inner side plates 410, 430 may be formed parallel to the central axis Bx. Outer side plate 410 and inner side plate 430 may be connected by a bottom plate 420, and a second cavity CV2 may be formed by outer side plate 410, bottom plate 420, and inner side plate 430.

The outer side of the frame 400 described above may be understood as the outer side of the outer panel 410, the bottom panel 420, and the inner panel 430. The outer side of the frame 400 may include a plane parallel to a direction in which the frame 400 is inserted into the mold 200 or ejected from the mold 200. That is, the outer side surfaces of the outer side plate 410 and the inner side plate 430 may be parallel to the insertion or discharge direction of the frame 400.

As described below, the first material 310 and the second material 320 may be disposed on both sides of the interface. The frame 400 may include a boundary side 440 that forms an interface. The interface may be formed in a shape corresponding to the boundary side 440. The boundary side 440 may include at least one of a parallel surface parallel to the central axis Bx of the frame 400 and an inclined surface formed to be inclined to the central axis Bx of the frame 400. Fig. 6 shows that the boundary side 440 is constituted only by a parallel surface parallel to the central axis Bx.

Referring to fig. 7, a first material 310 may be injected into an outer space of a frame 400. The first material 310 may be the same as the first material 310 injected before step S110. The first material 310 may be injected through the opening OP of the mold 200. One side of the injected first material 310 may be closely attached to the boundary side 440 of the frame 400.

Referring to fig. 8, the mold 400 may be removed from the mold 200 to form a second cavity CV 2. The frame 400 may be ejected from the first cavity CV1 through the opening OP of the mold 200.

In the present invention, the first material 310 may be injected into the first cavity CV1 in the form of powder. In addition, a bonding force of a constant size or more may act between the respective powder particles constituting the first material 310 and maintain its form even if the mold 400 is removed.

Accordingly, when the frame 400 is removed from the first material 310, the second cavity CV2 having a shape corresponding to the outer side of the frame 400 may be formed. That is, the second cavity CV2 may have a hollow cylindrical shape like the frame 400. At this point, the second cavity CV2 may include an interface 330 in contact with the first material 310.

As described above, the outer sides of the inner side plate 430 and the outer side plate 410 of the frame 400 may be parallel to the insertion or discharge direction of the frame 400. Therefore, even if the frame 400 is removed from the first material 310, the shape of the first material 310 may remain unchanged.

Referring to fig. 9 and 10, a second material 320, different from the first material 310, may be injected into the second cavity CV 2. The second material 320 may be injected through the opening OP of the mold 200. The second material 320 may be injected into the second cavity CV2 in the form of powder.

The second material 320 may be a fluororesin. The second material 320 may have a powder form similar to that of the first material 310, and the first material 310 and the second material 320 may be harmoniously fused when the first material 310 and the second material 320 are accommodated in the same space and compressed. For example, the second material 320 may be Polytetrafluoroethylene (PTFE), but the second material 320 of the present invention is not limited to PTFE.

There may be an interface 330 between the first material 310 and the second material 320. The interface 330 may be a circle having a constant radius R with respect to the central axis Bx of the frame 400.

At least a portion of the first material 310 and at least a portion of the second material 320 may be disposed on both sides of the interface 330 in a state where the interfaces 330 contact each other. In other words, a portion of the first material 310 and a portion of the second material 320 may have different radii with respect to the central axis Bx of the frame 400.

In the mold 200, the materials 310, 320 may be arranged as a mixed layer or as separate layers. The mixed layer is a layer including the first material 310 and the second material 320, and the individual layer is a layer including only the first material or the second material. At least one of the hybrid layer and the individual layer may be arranged in the mold, in particular at least one hybrid layer may be arranged in the mold. Fig. 9 shows that a separate layer consisting of only the first material 310 and a mixed layer comprising the first material 310 and the second material 320 are arranged in the mold 200. However, this is merely exemplary, and the mixed layer and the individual layers may be combined and arranged in the mold 200 in various forms.

As described above, the first material 310 may be a fluororesin as a material for generating a hetero-composite. The first material 310 may be carbon nanotube-polytetrafluoroethylene (hereinafter referred to as CNT-PTFE). The unit price of CNT-PTFE can be relatively high.

When a hetero-composite is generated in a state where the first chamber CV1 is filled with CNT-PTFE, and thus a part of semiconductor manufacturing equipment is manufactured, waste of CNT-PTFE occurs. The parts of the semiconductor manufacturing equipment may be produced by cutting or grinding the hetero-composite, and the cut or ground portion is a portion that cannot be reused in the entire region of the hetero-composite, so that waste of expenses may occur. In addition, in the case where the mold 400 or the like is inserted into the first cavity CV1 and compressed, cracks may occur in the hetero-composite.

Thus, in the entire region of the hetero-composite, the portion not used for generating the component of the semiconductor manufacturing equipment may be filled with polytetrafluoroethylene (hereinafter referred to as PTFE) having a relatively low unit price. When the compression is performed in a state where the CNT-PTFE and PTFE are filled in the first chamber CV1, cracks do not occur in the compression product, and waste of the CNT-PTFE can be prevented.

In a state where the first and second materials 310 and 320 are filled in the first cavity CV1 of the mold 200, pressure may be applied to the first and second materials 310 and 320 through the opening OP of the mold 200, thereby compressing the first and second materials 310 and 320 at the same time. At this time, heat may also be applied to the first material 310 and the second material 320.

The first material 310 and the second material 320 may be melted and solidified by pressure and heat, thereby being converted into the hetero-composite 500 (refer to fig. 11). The hetero-composite 500 may have a hollow cylindrical shape like the first cavity CV 1.

Referring to fig. 11 to 13, the hetero-composite 500 may include a first compressed structure 510 and a second compressed structure 520.

The first compressed structure 510 may be formed by compressing a first material 310, and the second compressed structure 520 may be formed by compressing a second material 320 different from the first material 310. Second compression structure 520 may be disposed in close proximity to first compression structure 510.

At least a portion of the first compression structure 510 and at least a portion of the second compression structure 520 may be disposed on both sides of the interface 530 in a state where the interface 530 having a circle with a constant radius R with respect to the central axis Cx is in contact with each other. Here, the interface 530 may correspond to the interface 330 of the materials 310, 320 described above.

The interface 530 may include at least one of a parallel plane parallel to the central axis Cx and an inclined plane formed inclined to the central axis Cx. Fig. 12 shows that the interface 530 is formed only by parallel surfaces.

The hetero-composite 500 may include a mixed layer and a separate layer. The mixed layer is a layer including a part of the first compression structure 510 and a part of the second compression structure 520, and a separate layer means a layer including only a part of the first compression structure 510 or a part of the second compression structure 520. The hetero-composite 500 may include at least one of a mixed layer and a separate layer, and particularly may include at least one mixed layer. Fig. 12 shows that the individual layers composed of only the first compressed structure 510 and the mixed layer including the first compressed structure 510 and the second compressed structure 520 constitute the hetero-composite 500. However, this is merely exemplary, and the mixed layer and the individual layers may be variously combined to constitute the hetero-composite 500.

Figure 13 shows a hetero-composite composed of mixed and individual layers combined in various morphologies. (a) And (b) shows that the hetero-composite is constituted to include one single layer and one mixed layer, and (c) shows that the hetero-composite is constituted to include only one mixed layer. The arrangement form of the first and second compressive structures 510 and 520 may be variously determined according to the form of the finally produced component of the semiconductor manufacturing apparatus.

While the hetero-composite 500 manufactured in the form of a hollow cylinder has been described above, the hetero-composite 501 may be manufactured in the form of a cylinder as shown in fig. 15. The hetero-composite 501 may include a first compressed structure 510 and a second compressed structure 520, and the hetero-composite 501 may be manufactured in a form that does not include a hollow cylinder. To this end, as shown in fig. 4, the mold 201 may not include a hollow, and the first cavity CV1 may provide a space of a cylinder.

Turning again to fig. 11-13, the heterocomposite 500 shown in fig. 11-13 can be processed to produce a component of a semiconductor manufacturing apparatus. In particular, the component of the semiconductor manufacturing apparatus may be configured to include at least one of the first compressive structure 510 and the second compressive structure 520.

Fig. 16 is a view for explaining processing of the hetero-composite to generate a component of the semiconductor manufacturing equipment, and fig. 17 is a sectional view taken along the line C-C' of the component of the semiconductor manufacturing equipment shown in fig. 16, and fig. 18 is a view for explaining forming of the component of the semiconductor manufacturing equipment from a plurality of materials.

Referring to fig. 16 and 17, the hetero-composite 500 may be processed to form a component 600 of a semiconductor manufacturing apparatus.

The component 600 of the semiconductor manufacturing equipment may be produced by cutting and grinding the heterogeneous composite 500. Fig. 16 and 17 show that the component 600 of the semiconductor manufacturing apparatus is generated to include only the first compressive structure 510. That is, the second compressed structure 520 is entirely cut and removed. The unit price of the first material 310 used to create the first compression structure 510 may be high, and the expense required to produce the component 600 of the semiconductor manufacturing equipment may be reduced overall due to the use of the relatively inexpensive second material 320.

Further, although fig. 16 and 17 show that the part 600 of the semiconductor manufacturing apparatus is generated to include only the first compressive structural body 510, the part 601 of the semiconductor manufacturing apparatus may be generated to include both the first compressive structural body 510 and the second compressive structural body 520 as shown in fig. 18.

In this case, the component of the semiconductor manufacturing apparatus may include a first portion and a second portion. The first portion may have a first physical property and the second portion may have a second physical property different from the first physical property. For example, the first portion and the second portion may have different conductivities. More specifically, the first portion may include Carbon Nanotube-polytetrafluoroethylene (CNT-PTFE; Carbon Nanotube-polytetrafluoroethylene), and the second portion may include Polytetrafluoroethylene (PTFE).

The second portion may be in direct contact with the first portion. Here, the first portion may mean a portion constituted by the first compression structure 510, and the second portion may mean a portion constituted by the second compression structure 520. Specifically, at least a portion of the first portion and at least a portion of the second portion may be disposed on both sides of the interface 540 in a state where circular interfaces 540 having a constant radius R with reference to the central axis Dx are in contact with each other. Here, the interface 540 may be formed parallel to or inclined from the central axis Dx.

In the present invention, the components 600, 601 of the semiconductor manufacturing equipment may be arranged adjacent to a substrate (not shown). When static electricity is generated in the components 600, 601 of the semiconductor manufacturing equipment, adverse effects may be exerted on the substrate. As shown in fig. 16 and 17, when the component 600 of the semiconductor manufacturing equipment is configured to include only the first compression structure body 510 having relatively high conductivity, generation of static electricity can be prevented. Further, as shown in fig. 18, when the first compressive structure 510 is included inside the component 601 of the semiconductor manufacturing equipment adjacent to the substrate and the second compressive structure 520 is included outside the component 601 of the semiconductor manufacturing equipment apart from the substrate, it is possible to prevent the generation of static electricity and to save the manufacturing cost of the component 601 of the semiconductor manufacturing equipment.

Fig. 19 and 20 are views for explaining formation of a second cavity by a plurality of subframes, and fig. 21 is a view for explaining injection of a second material in the mold shown in fig. 19, and fig. 22 is a view showing a hetero-composite generated by the mold shown in fig. 21.

Referring to fig. 19, the frame 700 may include a plurality of sub-frames 710, 720, 730, the plurality of sub-frames 710, 720, 730 having boundary sides 741, 742, 743 having different radii R1, R2, R3 with reference to a central axis Bx of the frame 700.

The second cavity CV2 may be formed using auxiliary frames 710, 720, 730 having different radii.

Referring to fig. 19 and 20, the interfaces 331, 332, 333 may be formed in shapes corresponding to the boundary side surfaces 741, 742, 743.

The first material 310 may be injected in a state where the first auxiliary frame 710 is inserted into the mold 200, thereby forming the first interface 331. Next, the first auxiliary frame 710 is removed and the first material 310 is injected in a state where the second auxiliary frame 720 is inserted into the mold 200, thereby forming the second interface 332. Next, the second auxiliary frame 720 is removed and the first material 310 is injected in a state where the third auxiliary frame 730 is inserted into the mold 200, thereby forming the third interface 333.

Fig. 19 and 20 show a case where the interfaces 331, 332, 333 are formed by three sub frames 710, 720, 730, but this is merely exemplary, and the interfaces may be formed by two sub frames, or may be formed by more than four sub frames.

Referring to fig. 21, the first portion of the first material 310 and the first portion of the second material 320 may be disposed at both sides with reference to a first interface 331 formed by a boundary side 741 of a first auxiliary frame 710 among the plurality of auxiliary frames 710, 720, 730, and the second portion of the first material 310 and the second portion of the second material 320 may be disposed at both sides with reference to a second interface 332 formed by a boundary side 742 of a second auxiliary frame 720 among the plurality of auxiliary frames 710, 720, 730. Further, the third portion of the first material 310 and the third portion of the second material 320 may be disposed on both sides with reference to the third interface 333 formed by the boundary side 743 of the third sub frame 730 among the plurality of sub frames 710, 720, 730.

Since the second cavity CV2 is formed using the auxiliary frames 710, 720, 730 having different radii, the first material 310 and the second material 320 corresponding to the fine shape of the components of the semiconductor manufacturing equipment may be arranged, and waste of materials having a high unit price may be prevented.

Referring to fig. 22, a hetero-composite 502 including a first compressed structure 510 and a second compressed structure 520 may be generated.

The hetero-composite 502 may be formed by compressing and heating the first material 310 and the second material 320 injected into the mold 200 of fig. 21.

The heterogeneous composite 502 may include a plurality of sub-interfaces 531, 532, 533 with different radii. The first portion of the first compression structure 510 and the first portion of the second compression structure 520 may be disposed at both sides of the first sub-interface 531 in a state where the first sub-interfaces 531 among the plurality of sub-interfaces 531, 532, 533 are in contact with each other, and the second portion of the first compression structure 510 and the second portion of the second compression structure 520 may be disposed at both sides of the second sub-interface 532 in a state where the second sub-interfaces 532 among the plurality of sub-interfaces 531, 532, 533 are in contact with each other. Further, the third portion of the first compression structure 510 and the third portion of the second compression structure 520 may be arranged on both sides of the third sub-interface 533 in a state where the third sub-interfaces 533 among the plurality of sub-interfaces 531, 532, 533 contact each other.

The hetero-composite 502 may be processed to form a component of semiconductor manufacturing equipment. Since the first and second compression structure bodies 510 and 520 are arranged in a fine structure, the costs required to produce the components of the semiconductor manufacturing equipment can be reduced as a whole.

Fig. 23 is a view for explaining formation of a second cavity by a frame including an inclined surface, and fig. 24 is a view showing a hetero-composite generated by the mold shown in fig. 23.

Referring to fig. 23, the frame 800 may include a boundary side 840 that forms an interface.

The boundary side 840 may include at least one of a parallel plane PL parallel to the central axis Bx of the frame 200 and an inclined plane SL formed inclined to the central axis Bx of the frame 200. Fig. 23 shows that the boundary side surface 840 is formed to include the parallel surface PL and the inclined surface SL.

Since the second cavity CV2 is formed using the frame 800 having the inclined surface SL, the arrangement of the first material 310 and the second material 320 corresponding to the fine shape of the hetero-composite may be performed, and the waste of the material having a high unit price may be prevented.

Referring to fig. 24, a hetero-composite 503 including a first compressed structure 510 and a second compressed structure 520 may be generated.

The heterogeneous compound 503 may be formed by compressing and heating the first material 310 and the second material 320 injected into the mold 200 of fig. 23.

The heterogeneous composite 503 may include circular interfaces 530, 550 having a constant radius with respect to the central axis Cx. The interfaces 530, 550 may include at least one of a parallel plane 530 parallel to the central axis Cx and an inclined plane 550 formed inclined to the central axis Cx.

At least a portion of the first compression structure 510 and at least a portion of the second compression structure 520 may be disposed on both sides of the interfaces 530, 550 in a state in which the interfaces 530, 550 contact each other.

The heterocompound 503 can be processed to produce a component of semiconductor manufacturing equipment. Since the first and second compression structure bodies 510 and 520 are arranged in a fine structure, the costs required to produce the components of the semiconductor manufacturing equipment can be reduced as a whole.

While the embodiments of the present invention have been described with reference to the drawings, it will be understood by those skilled in the art that the present invention may be embodied in other specific forms without changing the technical spirit or essential features thereof. The embodiments described above are therefore to be understood as illustrative in all respects and not restrictive.