阅读说明：本技术 用于处理基板的设备 (Apparatus for processing substrate ) 是由 金種植 黄喆周 于 2020-05-19 设计创作，主要内容包括：本发明关于用于处理基板的设备,包含支撑单元、盖体、第一气体注入单元、第二气体注入单元、清除气体单元及旋转单元,支撑单元用以支撑基板,盖体在向上方向上与支撑单元分离,第一气体注入单元耦接于盖体以将第一气体注入至第一区域中,第二气体注入单元耦接于盖体以将第二气体注入至第二区域中,清除气体单元耦接于盖体以将清除气体注入至第三区域中,第三区域设置于第一区域与第二区域之间,旋转单元用以使支撑单元旋转。(The present invention relates to an apparatus for processing a substrate, including a support unit for supporting the substrate, a cover separated from the support unit in an upward direction, a first gas injection unit coupled to the cover to inject a first gas into a first region, a second gas injection unit coupled to the cover to inject a second gas into a second region, a purge gas unit coupled to the cover to inject a purge gas into a third region disposed between the first region and the second region, and a rotation unit for rotating the support unit.)

1. An apparatus for processing a substrate, the apparatus comprising:

a supporting unit for supporting a substrate;

a cover body separated from the supporting unit in an upward direction;

a first gas injection unit coupled to the cover to inject a first gas into a first region;

a second gas injection unit coupled to the cover to inject a second gas into a second region;

a purge gas unit coupled to the cover to inject a purge gas into a third region disposed between the first region and the second region; and

a rotation unit for rotating the support unit,

wherein

The rotation unit rotates the support unit to move the substrate between the first region and the second region, stops the rotation of the support unit when a process using the first gas is performed in the first region and a process using the second gas is performed in the second region, and

the bottom surface of the first gas injection unit is separated from the supporting unit by a distance shorter than that of the second gas injection unit.

2. The apparatus of claim 1, wherein

The bottom surface of the second gas injection unit is separated from the bottom surface of the cover body in the upward direction, and

the bottom surface of the first gas injection unit is separated from the bottom surface of the cover body in a downward direction relative to the upward direction.

3. The apparatus of claim 1, wherein a distance separating the bottom surface of the second gas injection unit from the support unit is 3 to 15 times a distance separating the bottom surface of the first gas injection unit from the support unit.

4. The apparatus of claim 1, wherein the first gas injection unit injects the first gas into the first region having a volume smaller than a volume of the second region into which the second gas injection unit injects the second gas.

5. The apparatus of claim 1, wherein

The first gas injection unit includes:

a module body coupled to the cover; and

a plurality of first injection holes provided in the module body to inject the first gas into the first region, an

Wherein the second gas injection unit comprises:

a first electrode formed with a plurality of second injection holes for injecting the second gas, the first electrode being coupled to the plurality of protruding electrodes; and

a second electrode provided with a plurality of openings at positions corresponding to the protruding electrodes.

6. The apparatus of claim 5, wherein the second gas injection unit injects the second gas into a separation space between the first electrode and the second electrode.

7. The apparatus of claim 1, wherein a distance separating a bottom surface of the purge gas unit from the support unit is shorter than a distance separating a bottom surface of the first gas injection unit from the support unit.

8. The apparatus of claim 1, wherein a bottom surface of the purge gas unit and a bottom surface of the first gas injection unit are separated from the support unit by the same distance.

9. The apparatus of claim 1, wherein the support unit comprises a mounting member protruding from a top surface of the support unit in the upward direction to place the top surface of the substrate at a position separated from the top surface of the support unit.

10. The apparatus according to claim 1, further comprising a protruding member provided in the third area to protrude from the top surface of the supporting unit in the upward direction.

11. The apparatus of claim 10, wherein the protruding member comprises:

a first gas tank provided between the first region and the third region; and

a second gas channel provided between the first region and the second region.

12. The apparatus according to claim 1, further comprising a protruding member provided in the third area to protrude from the top surface of the supporting unit in the upward direction,

wherein

The supporting unit includes a mounting member separated from the protruding member to protrude from a top surface of the supporting unit in the upward direction,

the protruding member includes a first gas groove provided between the first region and the third region and a second gas groove provided between the first region and the second region

The protrusion and the mounting member each include an outer surface facing the first gas groove and the second gas groove.

13. The apparatus of claim 1, wherein

The purge gas unit includes a purge body separated from the third region in the upward direction and coupled to the lid,

the cleaning main body comprises a first cleaning main body and a second cleaning main body, the first cleaning main body corresponds to the central region in the third region, the second cleaning main body is arranged in a region of the third region through which the substrate passes when moving from the first region to the second region, and

a plasma generating mechanism coupled to the second cleaning body, the plasma generating mechanism generating a plasma.

14. The apparatus of claim 1, wherein

The purge gas unit includes a purge body separated from the third region in the upward direction and coupled to the lid,

the cleaning body includes a first cleaning body corresponding to a central region of the third region and a third cleaning body disposed in another region of the third region through which the substrate passes when moving from the second region to the first region, and

a window coupled to the third cleaning body for measuring a temperature of the substrate passing through the another region.

15. The apparatus of claim 1, wherein the rotation unit rotates the support unit at a fixed rotation angle with respect to a rotation axis of the support unit when the substrate moves from the first region to the second region, and rotates the support unit at a variable rotation angle different from the fixed rotation angle when the substrate moves from the second region to the first region.

16. The apparatus of claim 1, wherein

The supporting unit supports a plurality of substrates,

the first gas injection unit includes:

a plurality of first injection modules injecting the first gas into the first region where the substrate is disposed;

a first injection body coupled to the first injection module; and

a first sealing member for sealing a gap between the first injection main body and the cover body, and

wherein the first seal surrounds a plurality of outer portions of the first injection module.

Technical Field

The present invention relates to a substrate processing apparatus that performs processes such as a deposition process and an etching process on a substrate.

Background

Generally, in order to manufacture a solar cell, a semiconductor device, a flat panel display device, or the like, a thin-film circuit pattern (thin-film circuit pattern) or an optical pattern (optical pattern) is required to be formed on a substrate. For this reason, processes need to be performed on the substrate, and examples of the processes include a deposition process of depositing a thin film containing a particular material on the substrate, an exposure process of selectively exposing (expose) a portion of the thin film using a photosensitive material, an etching process of removing the selectively exposed portion of the thin film to form a pattern, and the like. Such a process is performed on a substrate by a substrate processing apparatus.

A known substrate processing apparatus includes a substrate supporting unit supporting a substrate, a rotating unit continuously rotating the substrate supporting unit with respect to a rotation axis thereof, a first gas injection unit injecting a first gas toward a first injection space of the substrate supporting unit, and a second gas injection unit injecting a second gas toward a second injection space of the substrate supporting unit.

When the first gas injection unit injects the first gas into the first injection space and the second gas injection unit injects the second gas into the second injection space, the rotation unit continuously rotates the substrate support unit such that the substrate sequentially and repeatedly passes through the first injection space and the second injection space. Therefore, an adsorption process for adsorbing the first gas onto the substrate is performed in the first injection space, and then the first gas adsorbed onto the substrate reacts with the second gas injected from the second gas injection unit, thereby performing a deposition process for depositing a thin film on the substrate. Accordingly, a thin film is deposited on a substrate through an Atomic Layer Deposition (ALD) process.

Here, the known substrate apparatus is implemented such that the rotation unit continuously rotates the substrate supporting unit, and thus the adsorption process is performed in a state where the substrate is rotated.

Therefore, in the known substrate apparatus, the adsorption process may not be normally performed in the first injection space due to a centrifugal force generated when the substrate is continuously rotated.

Therefore, in the known substrate apparatus, the first gas not adsorbed to the substrate in the second injection space reacts with the second gas injected by the second gas injection unit at the upper portion of the substrate, so that the thin film is deposited on the substrate through a Chemical Vapor Deposition (CVD) process, thereby causing a problem of degradation of the quality of the thin film deposited on the substrate.

Disclosure of Invention

[ problem ] to provide a method for producing a semiconductor device

The present invention is directed to solving the above-mentioned problems and to providing a substrate processing apparatus to prevent the quality of a thin film deposited on a substrate from being degraded.

[ MEANS FOR SOLVING PROBLEMS ] A method for producing a semiconductor device

In order to achieve the above object, the present invention may include the following elements.

An apparatus for processing a substrate according to the present invention may include a support unit to support the substrate, a cover disposed apart from the support unit in an upward direction, a first gas injection unit coupled to the cover to inject a first gas into a first region, a second gas injection unit coupled to the cover to inject a second gas into a second region, a purge gas injection unit coupled to the cover to inject a purge gas into a third region disposed between the first region and the second region, and a rotation unit to rotate the support unit. The rotation unit may rotate the support unit such that the substrate moves between the first region and the second region, and stop the rotation of the support unit when a process using the first gas is performed in the first region and a process using the second gas is performed in the second region. The bottom surface of the first gas injection unit is separated from the support unit by a distance shorter than that of the second gas injection unit.

[ MEANS FOR EFFECTS ]

According to the present invention, the following effects can be obtained.

The present invention is implemented such that a substrate is moved between a first region and a second region via rotation of a support unit, and a process using a first gas and a process using a second gas are simultaneously performed in a state where the support unit stops rotating. Therefore, the present invention can improve the stability of a process of depositing a thin film on a substrate using an Atomic Layer Deposition (ALD) process, thereby improving the quality of the thin film.

Brief description of the drawings

Fig. 1 is an exploded perspective view of a substrate processing apparatus according to the present invention.

Fig. 2 is a schematic side sectional view of the substrate processing apparatus according to the present invention taken along line I-I in fig. 1.

Fig. 3 is a schematic plan view of a support unit in a substrate processing apparatus according to the present invention.

Fig. 4 is a schematic plan view of a cover body in a substrate processing apparatus according to the present invention.

Fig. 5 is a side sectional view of one embodiment of the substrate processing apparatus of fig. 1 taken along line I-I provided with a first gas injection unit and a second gas injection unit according to the present invention.

Fig. 6 and 7 are schematic plan views illustrating an embodiment of an implantation module in a substrate processing apparatus according to the present invention.

Fig. 8 is a plan sectional view of a purge gas unit in the substrate processing apparatus according to the present invention, taken along line ii-ii in fig. 1.

Fig. 9 is a schematic side cross-sectional view of one embodiment of a purge gas unit disposed in the substrate processing apparatus according to the present invention taken along line I-I in fig. 1.

Fig. 10 to 12 are schematic plan views of a support unit in a substrate processing apparatus according to the present invention.

Fig. 13 is a plan sectional view of the supporting unit in the substrate processing apparatus according to the present invention, taken along line iii-iii in fig. 12.

Detailed description of the preferred embodiments

An embodiment of a substrate processing apparatus according to the present invention will be described in detail below with reference to the accompanying drawings.

Referring to fig. 1 and 2, a substrate processing apparatus 1 according to the present invention performs a process on a substrate S. The substrate S may be a glass substrate, a silicon substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention may perform a deposition process of depositing a thin film on the substrate S and an etching process of removing a portion of the thin film deposited on the substrate S. Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present invention performs a deposition process will be described, and an embodiment in which the substrate processing apparatus 1 according to the present invention is implemented to perform another process, such as an etching process, will be apparent to those of ordinary skill in the art.

The substrate processing apparatus 1 according to the present invention may include a support unit 2, a cover 3, a first gas injection unit 4, a second gas injection unit 5, a purge gas unit 6, and a rotation unit 7.

The support unit 2 supports the substrate S. The support unit 2 may be coupled to an inside of the chamber 1a, and the chamber 1a provides a processing space in which a process is performed. The processing space may be disposed between the support unit 2 and the cover 3. A substrate inlet (not shown) may be coupled to the chamber 1 a. The substrate S may be loaded into the chamber 1a through a substrate entrance and by using a loading apparatus (not shown). When the process is completed, the substrate S may be discharged to the outside of the chamber 1a through the substrate inlet by using a discharging apparatus (not shown). An exhaust member 1b (shown in fig. 2) for exhausting gas in the processing space to the outside may be coupled to the chamber 1 a.

The support unit 2 may include a mounting member 21 to which the substrate S is mounted.

The mounting member 21 may be disposed between the support unit 2 and the cover 3 and may be coupled to the support unit 2. That is, the mounting member 21 may be coupled to the top surface 2a of the support unit 2. The base plate S may be mounted to the mount 21 to protrude in the upward direction UD with respect to the mount 21. The upward direction UD may be a direction from the support unit 21 to the cover 3. Although not shown, the mounting member 21 may include a mounting groove (not shown) into which the substrate S is inserted. In this case, the substrate S may be inserted into the mounting groove and thus may be mounted to the mounting member 21. The mounting member 21 and the support unit 2 may be provided as one body.

The mounting member 21 protrudes from the top surface 2a of the support unit 2 in the upward direction UD. Therefore, the top surface of the substrate S may be disposed at a position separated from the top surface 2a of the support unit 2 in the upward direction UD. Therefore, the substrate processing apparatus 1 according to the present invention can provide a confining force (resistance force) for preventing gas from penetrating toward the top surface of the substrate S in the process of exhausting the gas from the processing space to the outside of the chamber 1 a. Therefore, the substrate processing apparatus 1 according to the present invention can improve the quality of the substrate S on which the process is completed.

The support unit 2 may include a mount 21 provided in plurality. Accordingly, the supporting unit 2 may be implemented to support the substrate S provided in plurality. The mounting members 21 may be provided separately from each other. Therefore, the substrates S may be disposed separately from each other.

Referring to fig. 1 and 2, the cover 3 is separated from the supporting unit 2 in an upward direction UD. The cover 3 may be coupled to the cavity 1a to cover an upper portion of the cavity 1 a. As shown in fig. 1, the cover 3 and the cavity 1a may be implemented in a hexagonal structure, but is not limited thereto, and may be implemented in a polygonal structure such as a cylindrical structure, an elliptical structure, or an octagonal structure.

Referring to fig. 1 to 5, the first gas injection unit 4 injects a first gas. The first gas injection unit 4 may be coupled to the cover body 3 and may be separated from the support unit 2 in the upward direction UD. The first gas injection unit 4 may inject the first gas through a plurality of first injection holes. The first gas injection unit 4 may inject a first gas into the first area a1 (shown in fig. 3). Accordingly, a process using the first gas may be performed in the first region a 1. The first region a1 may be a region for the first gas injection and may be a region disposed between the support unit 2 and the first gas injection unit 4. The bottom surface 4a of the first gas injection unit 4 may be disposed in the upward direction UD with respect to the first region a 1. The bottom surface 4a of the first gas injection unit 4 may be a surface of the first gas injection unit 4 in the downward direction DD. The downward direction DD may be opposite to the upward direction UD. The first gas injection unit 4 may be connected to the supply unit 10 (shown in fig. 2) via a hose, a tube and/or the like. The supply unit 10 supplies a first gas. The first gas may be a precursor of a raw material (source material) constituting a thin film deposited on the substrate S.

The first gas injection unit 4 may include a first injection module 41 (shown in fig. 4) that injects a first gas.

The first injection module 41 injects the first gas into the first region a 1. The first injection module 41 may inject the first gas into the first area a1 through the first injection holes. The first injection module 41 may be coupled to a first injection body 42 (shown in fig. 4) included in the first gas injection unit 4. The first injection body 42 is coupled to the lid 3. The first injection module 41 may be coupled to the lid 3 via a first injection body 42. The first injection module 41 may be provided to have a size greater than that of the substrate S.

The first injection module 41 provided in plurality may be coupled to the first injection body 42. In this case, the substrates S may be disposed in the first area a 1. Accordingly, the substrate processing apparatus 1 according to the present invention may perform processes on the substrates S in the first area a1 via the first gas injected using the respective first injection modules 41, thereby increasing a processing rate of the processes using the first gas. 2N (where N is an integer greater than 0) first implant modules 41 may be coupled to the first implant body 42.

The first gas injection unit 4 may include a first sealing member 43 (shown in fig. 4).

The first seal 43 seals a gap between the first injection body 42 and the cap body 3. When the plurality of first injection modules 41 are coupled to the first injection body 42, the first sealing member 43 may be disposed to surround the outside of the first injection modules 41. That is, the first injection module 41 may be disposed inwardly from the first seal 43. Therefore, in the substrate processing apparatus 1 according to the present invention, the first sealing member 43 may not be positioned between the first injection modules 41, thereby reducing the interval 41D (shown in fig. 4) between the first injection modules 41. Accordingly, the first gas injection unit 4 can be reduced in size, and thus the substrate processing apparatus 1 according to the present invention can be implemented to enable overall miniaturization in size.

Referring to fig. 1 to 5, the second gas injection unit 5 injects a second gas. The second gas injection unit 5 may be coupled to the cover body 3 and may be separated from the support unit 2 in the upward direction UD. The second gas injection unit 5 may be disposed opposite to the first gas injection unit 4 with respect to the purge gas unit 6.

The second gas injection unit 5 may inject the second gas through a plurality of second injection holes. The second gas injection unit 5 may inject a second gas into the second area a2 (shown in fig. 3). Accordingly, the process using the second gas may be performed in the second region a 2. The second region a2 may be a region into which the second gas is injected and may be a region disposed between the support unit 2 and the second gas injection unit 5. The bottom surface 5a of the second gas injection unit 5 may be disposed in the upward direction UD with respect to the second region a 2. The bottom surface 5a of the second gas injection unit 5 may be a surface in the downward direction DD in the second gas injection unit 5. The second region a2 may be disposed at a position separated from the first region a 1. The second gas injection unit 5 may be connected to the supply unit 10 (shown in fig. 2) via a hose, a tube and/or the like. Although not shown, the supply unit 10 may include a first supply mechanism that provides a first gas and a second supply mechanism that provides a second gas. The first supply mechanism may be connected to the first gas injection unit 4 and may supply the first gas to the first gas injection unit 4. The second supply mechanism may be connected to the second gas injection unit 5 and may supply the second gas to the second gas injection unit 5. When the first gas is a source gas, the second gas may be a reactive gas.

The second gas injection unit 5 may include a second injection module 51 (shown in fig. 4) injecting a second gas.

The second injection module 51 injects the second gas into the second region a 2. The second injection module 51 may inject the second gas into the second region a2 through the second injection holes. The second injection module 51 may be coupled to a second injection body 52 (shown in fig. 4) included in the second gas injection unit 5. The second injection body 52 is coupled to the lid 3. The second injection module 51 may be coupled to the lid 3 via a second injection body 52. The second injection module 51 may be provided to have a size greater than that of the substrate S.

A plurality of second injection modules 51 may be provided to be coupled to the second injection body 52. In this case, the substrates S may be disposed in the second area a 2. Accordingly, the substrate processing apparatus 1 according to the present invention may perform processes on the substrates S in the second area a2 via the second gas injected using the respective second injection modules 51, thereby increasing a processing rate of the processes using the second gas. The 2N second injection modules 51 may be coupled to the second injection body 52. The number of the second injection modules 51 may be the same as the number of the first injection modules 41.

The second gas injection unit 5 may include a second sealing member 53 (shown in fig. 4).

The second sealing member 53 seals a gap between the second injection body 52 and the cap body 3. When the plurality of second injection modules 51 are coupled to the second injection body 52, the second sealing member 53 may be disposed to surround the outside of the second injection modules 51. That is, the second injection module 51 may be disposed inwardly from the second seal 53. Therefore, in the substrate processing apparatus 1 according to the present invention, the second sealing member 53 may not be positioned between the second injection modules 51, thereby reducing the interval 51D (shown in fig. 4) between the second injection modules 51. Accordingly, the size of the second gas injection unit 5 can be reduced, and thus the substrate processing apparatus 1 according to the present invention can be implemented to enable the overall miniaturization in size.

Referring to fig. 5, the bottom surface 5a of the second gas injection unit 5 may be disposed apart from the supporting unit 2 by a distance greater than the distance separating the bottom surface 4a of the first gas injection unit 4 from the supporting unit 2. For example, the first separation distance L1 at which the bottom surface 4a of the first gas injection unit 4 is separated from the support unit 2 may be set to be shorter than the second separation distance L2 at which the bottom surface 5a of the second gas injection unit 5 is separated from the support unit 2. Therefore, even though the flow rate of the second gas injected through the second gas injection unit 5 is higher than the flow rate of the first gas injected through the first gas injection unit 4, the substrate processing apparatus 1 according to the present invention may be implemented to reduce the partial pressure difference between the first region a1 and the second region a 2. The partial pressure represents the pressure represented by each component in the mixed gas, and is proportional to the gas flow rate and inversely proportional to the size of the region into which the gas is injected. Therefore, in the substrate processing apparatus 1 according to the present invention, the second region a2 may be formed to have a larger size than the first region a1, so that a partial pressure difference between the first region a1 and the second region a2 may be reduced even when the second gas is injected at a flow rate higher than that of the first gas. Therefore, the substrate processing apparatus 1 according to the present invention may prevent the first gas from penetrating into the second region a2 and may prevent the second gas from penetrating into the first region a1 in the process using the first gas and the second gas, and thus may improve the degree of completion of the process using the first gas in the first region a1 and may improve the degree of completion of the process using the second gas in the second region a 2. Therefore, the substrate processing apparatus 1 according to the present invention can prevent the quality of the thin film from being degraded due to the mixing of the first gas and the second gas, thereby improving the quality of the substrate on which the process is performed.

Referring to fig. 5, the bottom surface 5a of the second gas injection unit 5 may be separated from the bottom surface 3a of the cover 3 in the upward direction UD. In this case, the bottom surface 4a of the first gas injection unit 4 may be separated from the bottom surface 3a of the cover 3 in the downward direction DD. Accordingly, since the second region a2 may be implemented to have a larger size than the first region a1, the substrate processing apparatus 1 according to the present invention may reduce the partial pressure difference between the first region a1 and the second region a2 even when the second gas is injected into the support unit 2 at a flow rate higher than that of the first gas. The bottom surface 3a of the lid body 3 may be a surface of the lid body 3 in the downward direction DD.

Although not shown, when the bottom surface 5a of the second gas injection unit 5 is separated from the bottom surface 3a of the cover 3 in the upward direction UD, the bottom surface 4a of the first gas injection unit 4 and the bottom surface 3a of the cover 3 may be disposed at the same height. Accordingly, since the second region a2 may be implemented to have a larger size than the first region a1, the substrate processing apparatus 1 according to the present invention may reduce the partial pressure difference between the first region a1 and the second region a 2.

The bottom surface 5a of the second gas injection unit 5 may be separated from the support unit 2 by a distance 3 to 15 times the distance that the bottom surface 4a of the first gas injection unit 4 is separated from the support unit 2. In this case, the bottom surface 5a of the second gas injection unit 5 may be separated from the support unit 2 by a distance equal to or less than 3 to 15 times the distance by which the bottom surface 4a of the first gas injection unit 4 is separated from the support unit 2. For example, the first separation distance L1 may be set to be greater than 0 mm and equal to or less than 5 mm, and the second separation distance L2 may be set to be 3 mm to 15 mm. Accordingly, since the second region a2 may be implemented to have a larger size than the first region a1, the substrate processing apparatus 1 according to the present invention may reduce the partial pressure difference between the first region a1 and the second region a2 even if the second gas is injected into the support unit 2 at a flow rate higher than that of the first gas.

The second gas injection unit 5 may inject the second gas into the second region a2, and the second region a2 has a larger volume than the first region a1 into which the first gas injection unit 4 injects the first gas. Therefore, even when the second gas is injected into the support unit 2 at a flow rate higher than that of the first gas, the substrate processing apparatus 1 according to the present invention may reduce the partial pressure difference between the first and second regions a1 and a2, and thus may prevent the first gas from permeating into the second region a2 and may prevent the second gas from permeating into the first region a 1.

An embodiment of the injection module 30 corresponding to the second injection module 51 (shown in fig. 4) and the first injection module 41 (shown in fig. 4) will be described in detail below with reference to fig. 4 to 7.

As shown in fig. 6, the injection module 30 may include a module body 31, a plurality of injection holes 32 and a transmission hole 33, the plurality of injection holes 32 injecting gas toward the support unit 2, and the transmission hole 33 connecting the injection holes 32. The delivery hole 33 may be connected to the supply unit 10 (shown in fig. 2). Accordingly, the gas provided by the supply unit 10 (shown in fig. 2) may be injected into the support unit 2 through the injection hole 32 while flowing along the transmission hole 33. Although not shown, a plasma generation unit may be connected to the injection module 30. In this case, the injection module 30 may excite the gas using the plasma and may inject the excited gas toward the support unit 2.

As shown in fig. 7, the injection module 30 may include a first electrode 34 and a second electrode 35. A plurality of protruding electrodes 36 may be formed in the first electrode 34. A plurality of electrode holes 37 may be formed in the second electrode 35. The first electrode 34 and the second electrode 35 may be disposed such that the protruding electrodes 36 are inserted into the electrode holes 37, respectively. In this case, the injection hole 32 and the transmission hole 33 may be formed in the first electrode 34. The injection module 30 may generate plasma when the protruding electrode 36 is grounded and plasma power is applied to the second electrode 35. Accordingly, the injection module 30 may excite the gas formed in the separation space 38 between the first electrode 34 and the second electrode 35 using the plasma. The gas having passed through the transmission holes 33 and the injection holes 32 in sequence may be excited in the separation space 38 and may be injected toward the support unit 2.

The first gas injection unit 4 and the second gas injection unit 5 may be implemented to include different kinds of injection modules 30. For example, the first gas injection unit 4 may include a showerhead type injection module 30 as shown in fig. 6, and the second gas injection unit 5 may include an electrode structure type injection module 30 as shown in fig. 7. For example, the first gas injection unit 4 may include an injection module 30 of an electrode structure type as shown in fig. 7, and the second gas injection unit 5 may include an injection module 30 of a showerhead type as shown in fig. 6.

When the first gas injection unit 4 includes the injector module 30 of the showerhead type and the second gas injection unit 5 includes the injector module 30 of the electrode structure type, the substrate processing apparatus 1 according to the present invention may be implemented such that the second gas injection unit 5 injects the second gas into the separation space 38. Accordingly, the substrate processing apparatus 1 according to the present invention may be implemented such that an additional injection space for the second gas may be secured via the separation space 38, and thus even if the flow rate of the second gas is increased, the partial pressure difference between the first region a1 and the second region a2 may be reduced.

The first gas injection unit 4 and the second gas injection unit 5 may be implemented to include the same kind of injection modules 30. For example, each of the first gas injection unit 4 and the second gas injection unit 5 may include a showerhead type injection module 30 as shown in fig. 6. For example, each of the first gas injection unit 4 and the second gas injection unit 5 may include an injection module 30 of an electrode structure type as shown in fig. 7.

Referring to fig. 1 to 10, the purge gas unit 6 injects purge gas. The purge gas unit 6 may inject a purge gas into the third zone 3, thus separating the first zone a1 and the second zone a 2. Accordingly, the purge gas unit 6 may prevent the first gas injected into the first region a1 from being mixed with the second gas injected into the second region a 2. The third region A3 may be disposed between the first region a1 and the second region a 2. The third region a3 may be a region into which the purge gas is injected and may be a region disposed between the support unit 2 and the purge gas unit 6. The bottom surface 6a of the purge gas unit 6 may be disposed opposite to the third region a3 in the upward direction UD. The bottom surface 6a of the purge gas unit 6 may be a surface of the purge gas unit 6 in the downward direction DD. The purge gas unit 6 may be connected to a supply unit 10 (shown in fig. 2) via a hose, tube and/or the like. Although not shown, the supply unit 10 may include a third supply mechanism that provides purge gas. The third supply mechanism may be connected to the purge gas unit 6 and may provide purge gas to the purge gas unit 6.

Referring to fig. 9, the bottom surface 6a of the purge gas unit 6 may be separated from the support unit 2 by a distance shorter than the distance separating the bottom surface 4a of the first gas injection unit 4 from the support unit 2. Therefore, in the substrate processing apparatus 1 according to the present invention, the purge gas unit 6 may protrude toward the support unit 2 more than the first gas injection unit 4, thereby increasing a separation tendency (division force) of separating the first and second regions a1 and a2 using the purge gas unit 6 through a gas barrier using the purge gas and a physical barrier using an arrangement (arrangement) of the purge gas unit 6. Therefore, the substrate processing apparatus 1 according to the present invention may increase a preventive force (preventive force) for preventing the first gas injected into the first region a1 from being mixed with the second gas injected into the second region a2, thereby reducing the degree of degradation in film quality due to the mixing of the gases. The bottom surface 6a of the purge gas unit 6 may be separated from the support unit 2 by a distance shorter than the bottom surface 5a of the second gas injection unit 5 is separated from the support unit 2.

The bottom surface 6a of the purge gas unit 6 may be disposed to protrude from the bottom surface 3a of the cover 3 by a first protruding distance. In this case, the bottom surface 4a of the first gas injection unit 4 may be disposed to protrude from the bottom surface 3a of the cover 3 by a second protrusion distance, and the second protrusion distance is shorter than the first protrusion distance. Therefore, in the substrate processing apparatus 1 according to the present invention, the purge gas unit 6 may protrude more toward the support unit 2 than the first gas injection unit 4, thereby increasing the separation tendency of the first and second regions a1 and a2 using the purge gas unit 6. Although not shown, the bottom surface 5a of the second gas injection unit 5 may be disposed to protrude from the support unit 2 by a third protrusion distance, and the third protrusion distance is shorter than the second protrusion distance.

The bottom surface 6a of the purge gas unit 6 and the bottom surface 4a of the first gas injection unit 4 may be separated from the support unit 2 by the same distance. For example, the bottom surface 6a of the purge gas unit 6 and the bottom surface 4a of the first gas injection unit 4 may be disposed at the same height as the bottom surface 3a of the cover 3. The bottom surface 6a of the purge gas unit 6 and the bottom surface 5a of the second gas injection unit 5 may be disposed at the same height as the bottom surface 3a of the cover 3.

Referring to fig. 1 to 11, the rotation unit 7 (shown in fig. 2) rotates the support unit 2. The rotation unit 7 may rotate the support unit 2 with respect to a rotation axis 20 (shown in fig. 10) of the support unit 2. The rotation unit 7 may rotate the support unit 2 in a first rotation direction R1 (shown in fig. 10). The first, third, second and third regions a1, A3, a2 and A3 may be sequentially disposed along the first rotation direction R1. As the rotation unit 7 rotates the support unit 2, a substrate S (shown in fig. 3) supported by the support unit 2 may rotate with respect to a rotation axis 20 of the support unit 2. Accordingly, the substrate S supported by the support unit 2 may be sequentially moved between the first region a1, the third region A3, and the second region a 2.

In the case where processes are performed on a plurality of substrates S in each of the first and second regions a1 and a2 of the substrate processing apparatus 1 according to the present invention, the rotation unit 7 may operate as follows.

First, as shown in fig. 10, the rotating unit 7 may rotate the supporting unit 2 such that the plurality of first substrates 100 are located in the first area a1 and the plurality of second substrates 200 are located in the second area a 2.

Subsequently, when the first substrate 100 is located at the first area a1 and the plurality of second substrates 200 are located at the second area a2, the rotating unit 7 may stop the supporting unit 2.

Subsequently, the first gas injection unit 4 may inject the first gas into the first region a 1. Accordingly, an adsorption process of adsorbing the first gas onto the first substrate 100 may be performed in the first region a 1. In this case, the second gas injection unit 5 may stand by without injecting the second gas into the second area a 2.

Subsequently, as shown in fig. 11, when the adsorption process performed on the first substrate 100 is completed, the rotating unit 7 may rotate the supporting unit 2 to locate the second substrate 200 in the first region a1 and the first substrate 100 in the second region a 2. In this case, the first substrate 100 may pass through the third region A3 in the process of moving from the first region a1 to the second region a 2. Accordingly, the first gas not adsorbed on the first substrate 100 may be removed by the purge gas injected by the purge gas unit 6. In this case, the second substrate 200 may pass through the third region A3 in the process of moving from the second region a2 to the first region a 1.

Subsequently, when the second substrate 200 is located at the first area a1 and the first substrate 100 is located at the second area a2, the rotating unit 7 may stop the supporting unit 2.

Subsequently, the first gas injection unit 4 may inject the first gas into the first region a 1. Accordingly, an adsorption process of adsorbing the first gas onto the second substrate 200 may be performed in the first region a 1. In this case, the second gas injection unit 5 may inject the second gas into the second region a 2. Accordingly, a deposition process of depositing a thin film on the first substrate 100 may be performed in the second region a2 by reacting the first gas adsorbed on the first substrate 100 with the second gas injected by the second gas injection unit 5. Accordingly, a thin film may be deposited on the first substrate 100 through an atomic layer deposition process. Accordingly, the substrate processing apparatus 1 according to the present invention may be implemented such that the second region a2 is formed to have a size greater than that of the first region a1, and thus a partial pressure difference between the first region a1 and the second region a2 may be reduced even when the second gas is injected at a flow rate higher than that of the first gas. Therefore, the substrate processing apparatus 1 according to the present invention may provide a confining force to prevent the second gas injected into the second region a2 from penetrating into the first region a1 and to prevent the first gas injected into the first region a1 from penetrating into the second region a 2. Accordingly, the substrate processing apparatus 1 according to the present invention can improve the degree of completion of the deposition process performed on the first substrate 100 and the adsorption process performed on the second substrate 200. The deposition process performed on the first substrate 100 and the adsorption process performed on the second substrate 200 may be performed simultaneously.

Subsequently, as shown in fig. 10, when the deposition process performed on the first substrate 100 and the adsorption process performed on the second substrate 200 are completed, the rotating unit 7 may rotate the supporting unit 2 to locate the first substrate 100 in the first area a1 and the second substrate 200 in the second area a 2. In this case, the second substrate 200 may pass through the third region A3 in the process of moving from the first region a1 to the second region a 2. Accordingly, the first gas not adsorbed on the second substrate 200 may be removed by the purge gas injected from the purge gas unit 6. In this case, the first substrate 100 may pass through the third region A3 in the process of moving from the second region a2 to the first region a 1. Accordingly, the second gas not deposited on the first substrate 100 may be removed by the purge gas injected by the purge gas unit 6.

Subsequently, when the first substrate 100 is located at the first area a1 and the second substrate 200 is located at the second area a2, the rotating unit 7 stops the supporting unit 2.

Subsequently, the first gas injection unit 4 may inject the first gas into the first region a 1. Accordingly, an adsorption process of adsorbing the first gas to the thin film deposited on the first substrate 100 may be performed in the first area a 1. In this case, the second gas injection unit 5 may inject the second gas into the second region a 2. Accordingly, a deposition process of depositing a thin film on the second substrate 200 may be performed in the second area a2 by reacting the first gas adsorbed on the second substrate 200 with the second gas injected by the second gas injection unit 5. Accordingly, a thin film may be deposited on the second substrate 200 through an atomic layer deposition process. Accordingly, the substrate processing apparatus 1 according to the present invention may be implemented such that the second region a2 is formed to have a size greater than that of the first region a1, and thus a partial pressure difference between the first region a1 and the second region a2 may be reduced even when the second gas is injected at a flow rate higher than that of the first gas. Therefore, the substrate processing apparatus 1 according to the present invention may provide a confining force to prevent the first gas injected into the first region a1 from penetrating to the second region a2 and to prevent the second gas injected into the second region a2 from penetrating to the first region a 1. Accordingly, the substrate processing apparatus 1 according to the present invention can improve the degree of completion of the deposition process performed on the second substrate 200 and the adsorption process performed on the first substrate 100. The adsorption process performed on the first substrate 100 and the deposition process performed on the second substrate 200 may be performed simultaneously.

As described above, the rotation unit 7 may repeat the rotation and stop of the rotation of the support unit 2, and repeat the adsorption process and the deposition process on the first substrate 100 and the adsorption process and the deposition process on the second substrate 200. The rotation unit 7 may repeat the rotation and stop of the rotation of the support unit 2 so that the adsorption process and the deposition process are repeated a predetermined number of times on the respective first and second substrates 100 and 200. In this case, the number of times of the adsorption process and the deposition process performed on the first substrate 100 and the adsorption process and the deposition process performed on the second substrate 200 may be performed to be the same. For this, finally, the second gas injection unit 5 may inject the second gas to the second substrate 200 positioned in the second area a2, and the first gas injection unit 4 may stand by without injecting the first gas to the first substrate 100 in the first area a 1.

As described above, the substrate processing apparatus 1 according to the present invention may be implemented such that the adsorption process is performed in the first region a1 and the deposition process is performed in the second region a2, and thus may be implemented to deposit a thin film via an atomic layer deposition process. In this case, the first and second regions a1 and a2 are separated by the purge gas injected into the third region A3, thereby preventing the quality of the film from being degraded by the mixing of the first and second gases. Further, the substrate processing apparatus 1 according to the present invention may be implemented as: such that the first and second substrates 100 and 200 are moved between the first and second areas a1 and a2 by the rotation of the support unit 2, while the adsorption process and the deposition process are performed in a state where the rotation of the support unit 2 is stopped. Therefore, the substrate processing apparatus 1 according to the present invention can improve the stability of a process of depositing a thin film through an atomic layer deposition process, thereby improving the quality of the thin film.

When the first substrate 100 moves from the first area a1 to the second area a2, the rotating unit 7 may always rotate the supporting unit 2 with respect to the rotating shaft 20 at a fixed rotation angle. When the first substrate 100 moves from the second area a2 to the first area a1, the rotating unit 7 may rotate the supporting unit 2 with a variable rotation angle that varies with respect to the rotating shaft 20. For example, the fixed rotation angle may be 180 degrees, and the variable rotation angle may be an angle different from 180 degrees. The variable angle of rotation may be 181 degrees, 179 degrees, or similar. In this case, the rotation unit 7 may repeat the rotation and stop of the rotation of the supporting unit 2 in the order of 180 degrees, 179 degrees, 180 degrees, and 181 degrees. The rotation unit 7 may repeat the rotation and stop of the rotation of the supporting unit 2 in the order of 180 degrees, 181 degrees, 180 degrees, and 179 degrees.

As described above, the substrate processing apparatus 1 according to the present invention may be implemented as: the rotation unit 7 is caused to rotate the support unit 2 at a variable rotation angle, and thus, portions of the first and second base plates 100 and 200 disposed under the first injection holes in the first region a1 and under the second injection holes in the second region a2 may be changed whenever the support unit 2 is rotated at a variable rotation angle. Therefore, the substrate processing apparatus 1 according to the present invention may reduce the probability of occurrence of a transfer phenomenon in which a hole pattern is transferred to a substrate having a completed process due to the positions of the first and second injection holes, thereby improving the uniformity of processing.

Herein, the purge gas unit 6 may include a plurality of purge holes 61 (shown in fig. 8) and a purge body 62 (shown in fig. 8).

The purge holes 61 are filled with purge gas. The purge hole 61 may be formed at the purge body 62. The purge holes 61 may be provided separately from each other.

The cleaning body 62 may be coupled to the cover 3. The clearing body 62 is separable from the third region a3 in the upward direction UD.

Referring to fig. 8, the cleaning body 62 may include a first cleaning body 621, a second cleaning body 622, and a third cleaning body 623.

The first cleaning body 621 is disposed between the second cleaning body 622 and the third cleaning body 623. The first cleaning body 621 may be disposed to correspond to a central area a31 (shown in fig. 8) of the third area A3. The first cleaning body 621 may inject a cleaning gas into the central region a31 through the cleaning holes 61. The central region a31 is disposed between one region a32 (shown in fig. 10) of the third region A3 and another region a33 (shown in fig. 10) of the third region A3. The one region a32 is a region through which the first and second substrates 100 and 200 pass while moving from the first region a1 to the second region a 2. The other region a33 is a region through which the first and second substrates 100 and 200 pass while moving from the second region a2 to the first region a 1.

The second cleaning body 622 is disposed to correspond to the one area a 32. The second purge body 622 may inject a purge gas into the one region a32 through the purge holes 61. A plasma generating mechanism 63 (shown in fig. 8) may be coupled to the second cleaning body 622. The plasma generating mechanism generates plasma. Accordingly, during the movement of the first and second substrates 100 and 200 from the first and second regions a1 to the second region a2, the purge gas may be simultaneously injected into the first and second substrates 100 and 200 and the plasma process may be performed on the first and second substrates 100 and 200 in the one region a 32. The second cleaning body 622 may excite the cleaning gas using the plasma and may inject the excited cleaning gas into the one region a 32. In this case, the process based on the energized purge gas may be performed on the first substrate 100 and the second substrate 200 in the one region a 32. In this case, the second cleaning body 622 coupled to the plasma generating mechanism 63 may be implemented as a showerhead type as shown in fig. 6 or an electrode structure type as shown in fig. 7.

The third cleaning body 623 may be disposed to correspond to another area a 33. The third purge body 623 may inject a purge gas into another region a33 through the purge hole 61. The window 64 (shown in fig. 8) may be coupled to the third cleaning body 623. A temperature measuring unit (not shown) may measure the temperature of the first and second substrates 100 and 200 passing through the other region a33 through the window 64. The window 64 may be formed of a transparent material or a translucent material. Accordingly, during the movement of the first and second substrates 100 and 200 from the second region a2 to the first region a1, the purge gas may be simultaneously injected into the first and second substrates 100 and 200 in the other region a33 and the temperature measurement may be performed on the first and second substrates 100 and 200.

Referring to fig. 12 and 13, the substrate processing apparatus 1 according to the present invention may include a protrusion member 8.

The protruding piece 8 protrudes from the top surface 2a of the support unit 2 in the upward direction UD. The protruding pieces 8 may be disposed to correspond to the third area a 3. Therefore, the substrate processing apparatus 1 according to the present invention can further enhance the preventive force against the mixing of the first gas and the second gas through the gas barrier using the purge gas and the physical barrier using the protrusion member 8. The protruding piece 8 may protrude from the top surface 2a of the support unit 2 in the upward direction UD such that the top surface thereof is disposed at the same height as that of the top surface of the mounting member 21. The protruding member 8 may be formed in a completely rectangular shape, but is not limited thereto, and may be formed in other shapes such as a disk shape in order to provide a solid barrier between the first area a1 and the second area a 2. The protruding member 8 and the support unit 2 may be provided as one body. The protruding member 8 may be provided at a position separated from the mounting member 21.

Since the protruding member 8 and the mounting member 21 protrude from the top surface 2a of the support unit 2 in the upward direction (UD arrow direction), a first gas groove 81 (shown in fig. 13) may be formed between the first area a1 and the third area A3. The first gas groove 81 may be interposed between the protruding member 8 and the mounting member 21 and implemented in a shape such as valley (valley). Therefore, the residual gas including at least one of the purge gas injected by the purge gas unit 6 and the first gas injected by the first gas injection unit 4 may flow along the first gas groove 81 and may be discharged to the outside of the chamber 1 a. A second gas groove 82 (shown in fig. 13) may be formed between the second region a2 and the third region A3. The second air groove 82 may be interposed between the protruding member 8 and the mounting member 21 and implemented in a shape such as valley (valley). Therefore, the residual gas including at least one of the purge gas injected by the purge gas unit 6 and the second gas injected by the second gas injection unit 5 may flow along the second gas groove 82 and may be discharged to the outside of the chamber 1 a.

Therefore, the substrate processing apparatus 1 according to the present invention is implemented to smoothly discharge the residual gas through the first gas groove 81 and the second gas groove 82. Also, since the protruding pieces 8 and the mounting pieces 21 protrude from the top surface 2a of the support unit 2 in the upward direction UD, the substrate processing apparatus 1 according to the present invention is implemented to prevent the residual gas discharged through the first and second gas grooves 81 and 82 from permeating toward the first and second substrates 100 and 200. In this case, the outer surfaces of the respective protruding members 8 and the mounting members 21 facing the first and second gas grooves 81 and 82 may function as barriers that prevent residual gas from permeating toward the first and second substrates 100 and 200. Accordingly, the substrate processing apparatus 1 according to the present invention may reduce the degree of occurrence of a deviation (deviation) portion of a process rate, such as a deposition rate or an etch rate, caused by residual gas on the first and second substrates 100 and 200, thereby further improving process uniformity.

The present invention as described above is not limited to the above-described embodiments and the accompanying drawings, and those skilled in the art will clearly understand that various modifications, variations and substitutions can be made therein without departing from the scope and spirit of the present invention.