阅读说明：本技术 发光元件封装件及其应用 (Light emitting element package and application thereof ) 是由 张锺敏 金彰渊 于 2020-03-19 设计创作，主要内容包括：发光元件封装件包括：印刷电路板,具有正面和背面；至少一个发光元件,设置于所述正面上,并且向所述正面所朝向的方向射出光；以及模制层,设置于所述印刷电路板上并包围所述发光元件,其中,所述发光元件包括：发光结构体,设置于所述印刷电路板上；基板,设置于所述发光结构体上；以及多个凸起电极,设置于所述发光结构体与所述印刷电路板之间。所述模制层可以覆盖所述基板的上表面,并且可以将外部光的一部分反射、散射或吸收。(The light emitting element package includes: a printed circuit board having a front side and a back side; at least one light emitting element that is provided on the front surface and emits light in a direction in which the front surface faces; and a molding layer disposed on the printed circuit board and surrounding the light emitting element, wherein the light emitting element includes: a light emitting structure body disposed on the printed circuit board; a substrate disposed on the light emitting structure; and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board. The molding layer may cover an upper surface of the substrate, and may reflect, scatter, or absorb a portion of external light.)

1. A light emitting element package, comprising:

a printed circuit board having a front side and a back side;

at least one light emitting element that is provided on the front surface and emits light in a direction in which the front surface faces; and

a molding layer disposed on the printed circuit board and surrounding the light emitting element,

wherein the light emitting element includes:

a light emitting structure body disposed on the printed circuit board;

a substrate disposed on the light emitting structure; and

a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board,

wherein the molding layer covers an upper surface of the substrate and reflects, scatters, or absorbs a portion of external light.

2. The light emitting element package according to claim 1,

the molding layer has a substantially flat upper surface.

3. The light emitting element package according to claim 2,

the molding layer is filled in at least a portion between the light emitting structure body and the printed circuit board.

4. The light emitting element package according to claim 1,

the molded layer has an external light reflectance, an external light scattering rate, or an external light absorption rate of about 50% or more.

5. The light emitting element package according to claim 4,

the molded layer has a black color.

6. The light emitting element package according to claim 1,

the printed circuit board comprises an upper electrode arranged on the front surface, a lower electrode arranged on the back surface and a through hole electrode connected with the upper electrode and the lower electrode, and the protruding electrode is connected with the corresponding upper electrode.

7. The light emitting element package according to claim 6,

the distance between two lower electrodes adjacent to each other is greater than the distance between two upper electrodes adjacent to each other.

8. The light emitting element package according to claim 6,

the light emitting element is provided in plurality.

9. The light emitting element package according to claim 8,

the light emitting elements are provided in four, and the light emitting structure of each of the light emitting elements includes: and a plurality of epitaxial stacks stacked on the substrate in this order and emitting light of different wavelength bands, wherein the light emitting regions overlap each other.

10. The light emitting element package according to claim 9,

the plurality of epitaxial stacks includes:

a first epitaxial stack that emits a first light;

a second epitaxial stack disposed on the first epitaxial stack and emitting second light of a wavelength band different from the first light; and

and a third epitaxial stack disposed on the second epitaxial stack and emitting third light of a wavelength band different from the first and second lights.

11. The light emitting element package according to claim 10,

the first to third epitaxial stacks respectively include:

a p-type semiconductor layer;

an n-type semiconductor layer; and

and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer.

12. The light emitting element package according to claim 11,

the bump electrode includes:

a first bump electrode connected to the p-type semiconductor layer of the first epitaxial stack;

a second bump electrode connected to the p-type semiconductor layer of the second epitaxial stack;

a third bump electrode connected to the p-type semiconductor layer of the third epitaxial stack; and

and a fourth bump electrode connected to the n-type semiconductor layers of the first to third epitaxial stacks.

13. The light emitting element package according to claim 9,

the light emitting element includes a first light emitting element, a second light emitting element, a third light emitting element, and a fourth light emitting element,

the lower electrode includes first to sixth scan pads, first and second data pads,

the first light emitting element is connected to the first to third scan pads and the first data pad,

the second light emitting element is connected to the first to third scan pads and the second data pad,

the third light emitting element is connected to the fourth to sixth scan pads and the first data pad,

the fourth light emitting element is connected to the fourth to sixth scan pads and the second data pad.

14. The light emitting element package according to claim 13,

in each of the light emitting elements, the bump electrodes include first to fourth bump electrodes to which first to third scan signals are applied and to which data signals are applied.

15. The light emitting element package according to claim 1,

the molding layer is formed using a vacuum lamination method.

16. A display device, comprising:

a base substrate; and

at least one light emitting element package according to claim 1, provided on the base substrate.

17. An illumination device, comprising:

a base substrate; and

at least one light emitting element package according to claim 1, provided on the base substrate.

18. A method for manufacturing a light emitting element package, comprising the steps of:

forming a light emitting element;

disposing the light emitting element on a printed circuit board;

forming a molding layer on the printed circuit board by a vacuum lamination method in a manner to cover the light emitting element;

cutting the printed circuit board and the molding layer to form a light emitting element package,

wherein the molding layer covers an upper surface of the printed circuit board and includes a material that reflects, scatters, or absorbs a portion of external light.

Technical Field

The present invention relates to a light emitting device package and an application using the same.

Background

Recently, various devices using Light Emitting Diodes (LEDs) have been developed. The device using the light emitting diode as a light source may be, for example, a general illumination or display device. The device using the light emitting diode is obtained by finally forming a structure of Red (R: Red), Green (G: Green), and Blue (B: Blue) Light Emitting Diodes (LEDs) which are independently grown on a substrate.

In order to apply such a light emitting diode to various devices, it is necessary to have a simple structure and to be easily manufactured.

Disclosure of Invention

Technical problem

According to an embodiment of the present invention, it is an object to provide a light emitting element package having a simple structure and a simple manufacturing method, and an application thereof.

Technical scheme

A light emitting element package according to an embodiment of the present invention includes: a printed circuit board having a front side and a back side; at least one light emitting element that is provided on the front surface and emits light in a direction in which the front surface faces; and a molding layer disposed on the printed circuit board and surrounding the light emitting element, wherein the light emitting element includes: a light emitting structure body disposed on the printed circuit board; a substrate disposed on the light emitting structure; and a plurality of bump electrodes disposed between the light emitting structure and the printed circuit board. The molding layer may cover an upper surface of the substrate and reflect, scatter, or absorb a portion of external light.

In an embodiment according to the present invention, the molding layer may have a substantially flat upper surface.

In an embodiment according to the present invention, the molding layer may be filled in at least a portion between the light emitting structure body and the printed circuit board.

In an embodiment according to the present invention, the molding layer may have an external light reflectance, an external light scattering rate, or an external light absorption rate of 50% or more.

In an embodiment according to the present invention, the molding layer may have a black color.

In an embodiment of the invention, the printed circuit board may include a plurality of upper electrodes disposed on the front surface, a plurality of lower electrodes disposed on the rear surface, and via electrodes connecting the upper electrodes and the lower electrodes, and the bump electrodes are respectively connected to corresponding upper electrodes among the upper electrodes.

In an embodiment according to the present invention, a distance between two lower electrodes adjacent to each other among the plurality of lower electrodes may be greater than a distance between two upper electrodes adjacent to each other among the plurality of upper electrodes.

In an embodiment according to the present invention, the light emitting element may be provided in plurality. For example, the light emitting elements may be provided in four, and the light emitting structure body of each of the light emitting elements includes: and a plurality of epitaxial stacks stacked on the substrate in sequence to emit light of different wavelength bands, and light emission regions overlapping each other.

In an embodiment according to the present invention, the plurality of epitaxial stacks may include: a first epitaxial stack that emits a first light; a second epitaxial stack disposed on the first epitaxial stack and emitting second light of a wavelength band different from the first light; and a third epitaxial stack disposed on the second epitaxial stack and emitting third light of a wavelength band different from the first light and the second light.

In an embodiment according to the present invention, the first to third epitaxial stacks may respectively include: a p-type semiconductor layer; an n-type semiconductor layer; and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer.

In an embodiment according to the present invention, the plurality of bump electrodes may include: a first bump electrode connected to the p-type semiconductor layer of the first epitaxial stack; a second bump electrode connected to the p-type semiconductor layer of the second epitaxial stack; a third bump electrode connected to the p-type semiconductor layer of the third epitaxial stack; and a fourth bump electrode connected to the n-type semiconductor layers of the first to third epitaxial stacks.

In an embodiment of the present invention, the light emitting device may include a first light emitting device, a second light emitting device, a third light emitting device and a fourth light emitting device, the lower electrode includes first to sixth scan pads, a first data pad and a second data pad, the first light emitting device is connected to the first to third scan pads and the first data pad, the second light emitting device is connected to the first to third scan pads and the second data pad, the third light emitting device is connected to the fourth to sixth scan pads and the first data pad, and the fourth light emitting device is connected to the fourth to sixth scan pads and the second data pad.

In an embodiment according to the present invention, in each of the light emitting elements, the plurality of bump electrodes may include first to fourth bump electrodes to which the first to third scan signals are applied and the fourth bump electrode to which the data signal is applied.

In an embodiment according to the present invention, the molding layer may be formed using a vacuum laminate (vacuum laminate) method.

In an embodiment according to the present invention, the light emitting element package may be employed in a display device or a lighting device for a vehicle, and in this case, may include: a base substrate; and at least one light emitting element package disposed on the base substrate.

A light emitting element package according to an embodiment of the present invention can be manufactured by a method including the steps of: forming a light emitting element; disposing the light emitting element on a printed circuit board; forming a molding layer on the printed circuit board by a vacuum lamination method in a manner to cover the light emitting element; the printed circuit board and a molding layer, which may cover an upper surface of the printed circuit board and includes a material that reflects, scatters, or absorbs a portion of external light, are cut to form a light emitting element package.

Advantageous effects

According to an embodiment of the present invention, a light emitting element package having a simple structure and a simple manufacturing method is provided. Also, according to an embodiment of the present invention, there is provided a display device using the light emitting element.

Drawings

Fig. 1 is a sectional view illustrating a light emitting element according to an embodiment of the present invention.

Fig. 2a is a plan view specifically illustrating a light emitting element according to an embodiment of the present invention, and fig. 2b is a sectional view according to line a-a' of fig. 2 a.

Fig. 3a to 7b sequentially illustrate a method of manufacturing a light emitting element according to an embodiment of the present invention, where fig. 3a, 4a, 5a, 6a and 7a are plan views, and fig. 3b, 4b, 5b, 6b and 7b are cross-sectional views taken along line a-a' of fig. 3a, 4a, 5a, 6a and 7 a.

Fig. 8a to 8d sequentially illustrate a method of manufacturing the light emitting element package.

Fig. 9a is a plan view illustrating a light emitting element package according to an embodiment of the present invention, and is a top surface view illustrating a state where four light emitting elements are mounted in a matrix shape on one printed circuit board, and fig. 9b is a back surface view of the light emitting element package shown in fig. 9 a.

Fig. 10 is a circuit diagram of the light emitting element package shown in fig. 9a and 9 b.

Fig. 11 is an exemplary cross-sectional view illustrating a case where a light source module is manufactured by mounting a plurality of light emitting element packages on a base substrate for application to a display device, a lighting device for a vehicle, or the like.

Fig. 12 is a plan view conceptually illustrating a case where a light emitting element package according to an embodiment of the present invention is applied to a display device, and fig. 13 is a plan view enlarging a portion P1 of fig. 12.

Best mode for carrying out the invention

The present invention is capable of various modifications and of various forms, and specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. However, the present invention is not limited to the specific forms disclosed, and all modifications, equivalents, and alternatives included in the spirit and technical scope of the present invention are to be understood as included therein.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

The present invention relates to a light emitting device, and more particularly, to a light emitting device emitting light. The light-emitting element of the present invention can be used as a light source for various devices.

Fig. 1 is a sectional view illustrating a light emitting element according to an embodiment of the present invention.

Referring to fig. 1, a light emitting element according to an embodiment of the present invention includes a light emitting structure composed of a plurality of epitaxial stacks (epitaxialstack) stacked in sequence. The light emitting structure is disposed on the substrate 11.

The substrate 11 is provided in a plate shape having a front surface and a back surface.

The plurality of epitaxial stacks included in the light emitting structure may be provided in two or more, and each may emit light of a different wavelength band from each other. That is, the epitaxial stack is provided in plural and each has energy bands which are the same as or different from each other. In the present embodiment, a case is illustrated in which the light emitting structure is configured such that the epitaxial stacks are sequentially stacked in three layers on the front surface of the substrate 11, and a plurality of epitaxial stacks are stacked in the order of the third epitaxial stack 40, the second epitaxial stack 30, and the first epitaxial stack 20 from the front surface of the substrate 11.

The substrate 11 may be formed using a translucent insulating material.

The material of the substrate 11 may be provided as one of growth substrates capable of growing the epitaxial stack (i.e., the third epitaxial stack 40) disposed on the front surface of the substrate 11. In an embodiment of the present invention, the substrate 11 may be sapphire (Al)₂O₃) Silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga)₂O₃) Or a silicon (Si) substrate.

Each epitaxial stack emits light in a direction (downward direction in fig. 1) in which the back surface of the substrate 11 faces. At this time, light emitted from one epitaxial stack passes through the other epitaxial stack located in the optical path and travels in the direction toward the back surface of the substrate 11.

In the present embodiment, the first epitaxial stack 20 may emit a first light, the second epitaxial stack 30 may emit a second light, and the third epitaxial stack 40 may emit a third light. Here, the first to third lights may be the same light as each other, or may be different lights from each other. In an embodiment of the present invention, the first to third lights may be color lights in a visible light band.

In an embodiment of the present invention, the first to third lights may be lights having different wavelength bands having short wavelengths in sequence. That is, the first to third lights may have wavelength bands that are the same as or different from each other, and may be lights of short wavelength bands having higher and higher energy from the first to third lights. In this embodiment, the first light may be red light, the second light may be green light, and the third light may be blue light. However, the first to third lights may be lights of mutually different wavelength bands having long wavelengths in sequence, or may also be lights of mutually different wavelength bands arranged irregularly regardless of the length of the wavelength. As an example, the first light may be red light, the second light may be blue light, and the third light may be green light.

In the light emitting structure according to an embodiment of the present invention having the above-described structure, the signal wiring to which the light emitting signal is applied is independently connected to each of the epitaxial stacks, respectively, and thus each of the epitaxial stacks is independently driven. Accordingly, it is possible to realize various colors by determining whether light is emitted from each epitaxial stack. Further, since the epitaxial stacks that emit light of different wavelengths are formed so as to overlap each other, they can be formed in a narrow area.

More specifically, in the light emitting laminate according to an embodiment of the present invention, the third epitaxial stack 40 may be disposed on the substrate 11, the second epitaxial stack 30 may be disposed on the third epitaxial stack 40 via the second adhesive layer 63, and the first epitaxial stack 20 may be disposed on the second epitaxial stack 30 via the first adhesive layer 61.

The first adhesive layer 61 and the second adhesive layer 63 may be formed using a non-conductive material, and include a material having light transmittance. For example, an Optically transparent Adhesive (optical Clear Adhesive) may be used for the first Adhesive layer 61 and the second Adhesive layer 63. However, an embodiment of the present invention is not limited thereto, and the first adhesive layer 61 and the second adhesive layer 63 may also be optically transparent to a specific wavelength. For example, the first adhesive layer 61 and the second adhesive layer 63 may be color filters that transmit only specific wavelengths and express predetermined colors. The color may be selected from a variety of colors, for example, red, blue or green, or a different color.

The third epitaxial stack 40 includes an n-type semiconductor layer 41, an active layer 43, and a p-type semiconductor layer 45 sequentially arranged from a lower portion to an upper portion. The n-type semiconductor layer 41, the active layer 43, and the p-type semiconductor layer 45 of the third epitaxial stack 40 may include a semiconductor material that emits blue light. A third p-type contact electrode 45p is provided on the upper portion of the p-type semiconductor layer 45 of the third epitaxial stack 40.

The second epitaxial stack 30 includes a p-type semiconductor layer 35, an active layer 33, and an n-type semiconductor layer 31 sequentially arranged from a lower portion to an upper portion. The p-type semiconductor layer 35, the active layer 33, and the n-type semiconductor layer 31 of the second epitaxial stack 30 may include a semiconductor material emitting green light. A second p-type contact electrode 35p is disposed at a lower portion of the p-type semiconductor layer 35 of the second epitaxial stack 30.

The first epitaxial stack 20 includes a p-type semiconductor layer 25, an active layer 23, and an n-type semiconductor layer 21 sequentially arranged from a lower portion toward an upper portion. The p-type semiconductor layer 25, the active layer 23, and the n-type semiconductor layer 21 of the first epitaxial stack 20 may include a semiconductor material emitting red light. A first p-type contact electrode 25p may be disposed at a lower portion of the p-type semiconductor layer 25 of the first epitaxial stack 20.

A first n-type contact electrode may be disposed on an upper portion of the n-type semiconductor layer 21 of the first epitaxial stack 20. The first n-type contact electrode 21n may be formed using a single layer or a plurality of layers of metal. For example, various materials including metals such as Al, Ti, Cr, Ni, Au, Ag, Sn, W, Cu, and the like, or alloys thereof may be used for the first n-type contact electrode 21 n.

In the present embodiment, the first p-type contact electrode 25p, the second p-type contact electrode 35p, and the third p-type contact electrode 45p may be formed of a transparent conductive material to transmit light.

In the present embodiment, common wirings may be connected to the n-type semiconductor layers 21, 31, 41 of the first, second, and third epitaxial stacks 20, 30, and 40. Here, the common wiring is a wiring to which a common voltage is applied. Light emitting signal wirings may be connected to the p-type semiconductor layers 25, 35, and 45 of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 through the p-type contact electrodes 25p, 35p, and 45p, respectively. Specifically, the common voltage S is applied to the first n-type contact electrode 21n, the second n-type semiconductor layer 31, and the third n-type semiconductor layer 41 through the common wiring_CThe p-type contact electrodes 25p, 35p, 45p of the first, second, and third epitaxial stacks 20, 30, 40 are applied with light emission signals through light emission signal wiring lines, thereby controlling light emission of the first, second, and third epitaxial stacks 20, 30, 40. Here, the light emitting signal includes a first epitaxial stack 20, a second epitaxial stack 30, and a third epitaxial stackThe first light-emitting signal S corresponding to the stack 40_RA second light emitting signal S_GA third light emitting signal S_B. In an embodiment of the invention, the first light-emitting signal S_RMay be a signal corresponding to the emission of red light, the second emission signal S_GMay be a signal corresponding to the emission of green light, the third emission signal S_BMay be a signal corresponding to the emission of blue light.

According to the above-described embodiment, the first, second, and third epitaxial stacks 20, 30, and 40 are driven according to a light emitting signal applied to each epitaxial stack. That is, the first epitaxial stack 20 is according to the first light emitting signal S_RDriven, the second epitaxial stack 30 is driven according to the second light emitting signal S_GDriven, the third epitaxial stack 40 is in accordance with the third light emission signal S_BIs driven. Here, the first luminescent signal S_RA second light emitting signal S_GAnd a third light emitting signal S_BAre applied to the first, second and third epitaxial stacks 20, 30, 40 independently of one another, as a result of which the first, second and third epitaxial stacks 20, 30, 40 are driven independently of one another, respectively. The light emitting stack may finally provide light of various colors and various amounts of light through a combination of the first to third light emitted in a lower direction from the first, second, and third epitaxial stacks 20, 30, and 40.

In the above-described embodiment, the following is explained: a common voltage is supplied to the n-type semiconductor layers 21, 31, 41 of the first, second, and third epitaxial stacks 20, 30, and 40, and a light emitting signal is applied to the p-type semiconductor layers 25, 35, and 45 of the first, second, and third epitaxial stacks 20, 30, and 40. However, embodiments of the invention are not limited thereto. In another embodiment of the present invention, a common voltage may be applied to the p-type semiconductor layers 25, 35, and 45 of the first, second, and third epitaxial stacks 20, 30, and 40, and a light emitting signal may be applied to the n-type semiconductor layers 21, 31, and 41 of the first, second, and third epitaxial stacks 20, 30, and 40.

In the light emitting laminate according to the embodiment of the present invention having the above-described structure, when colors are realized, different lights are not realized on different planes spaced apart from each other, but a part of the different lights is provided in the overlapping region, so that miniaturization and integration of the light emitting element can be realized. According to the present invention, a stacked body is provided by overlapping a part of light-emitting elements which realize different lights in one region, whereby a full color can be realized in an area significantly smaller than that of the conventional invention. Therefore, a high-resolution device can be manufactured even in a small area. In addition, in the light-emitting laminated body having the above-described structure, when epitaxial stacks emitting light of the same wavelength band are stacked instead of epitaxial stacks emitting light of different wavelength bands, light-emitting devices in which the intensity of light is controlled in a variety of ways can be manufactured.

In the light emitting laminate according to an embodiment of the present invention, after a plurality of epitaxial stacks are sequentially stacked on one substrate, contact portions are formed and wiring portions are connected in the plurality of epitaxial stacks through a minimum number of processes. Further, in the present invention, only one light emitting laminate needs to be attached instead of a plurality of light emitting elements, as compared with a conventional method for manufacturing a display device in which light emitting elements of various colors are separately manufactured and attached, the manufacturing method is significantly simplified.

A light-emitting element according to an embodiment of the present invention can be implemented in various forms, and a specific embodiment will be described with reference to fig. 2a and 2 b.

Fig. 2a is a plan view specifically illustrating a light emitting element according to an embodiment of the present invention, and fig. 2b is a sectional view taken along line a-a' of fig. 2 a.

Referring to fig. 2a and 2b, a light emitting device according to an embodiment of the present invention includes: a substrate 11; a light emitting structure body disposed on a substrate and including a plurality of epitaxial stacks; the bump electrodes 20bp, 30bp, 40bp and 50bp are arranged on the light-emitting structure body. The light emitting structure includes a third epitaxial stack 40, a second epitaxial stack 30, and a first epitaxial stack 20 stacked on a substrate 11.

The first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 respectively include a p-type semiconductor layer, an n-type semiconductor layer, and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. The n-type semiconductor layer, the p-type semiconductor layer, and the active layer of each epitaxial stack are illustrated as one epitaxial stack in the drawings.

A third p-type semiconductor layer 45, a second bonding layer 63, and a second p-type contact electrode 35p are sequentially provided on the third epitaxial stack 40. The second p-type contact electrode 35p is in direct contact with the second epitaxial stack 30.

The first bonding layer 61 and the first p-type contact electrode 25p are sequentially disposed on the second epitaxial stack 30. The first p-type contact electrode 25p is in direct contact with the first epitaxial stack 20.

A first n-type contact electrode 21n is disposed on the first epitaxial stack 20. The first n-type semiconductor layer 21 may have a structure in which a portion of the upper surface is recessed, and the first n-type contact electrode 21n may be disposed at the recessed portion.

A single-layer or multi-layer insulating film is provided on the substrate 11 on which the first, second, and third epitaxial stacks 20, 30, and 40 are stacked. In an embodiment of the present invention, a first insulating film 81 and a second insulating film 83 covering a stacked body of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 may be disposed on a portion of the side surfaces and the upper surfaces of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40. The first insulating film 81 and/or the second insulating film 83 may be formed using various organic/inorganic insulating materials, and the material and form thereof are not limited. For example, the first insulating film 81 and/or the second insulating film 83 may be provided as a silicon oxide film, a silicon nitride film, Al₂O₃Or a Distributed Bragg Reflector (DBR). Further, the first insulating film 81 and/or the second insulating film 83 may be a black organic polymer film.

The pixel is provided with a contact portion for connecting the wiring portion to the first, second, and third epitaxial stacks 20, 30, and 40. The contacts include a first contact 20C for providing a light emitting signal to the first epitaxial stack 20, a second contact 30C for providing a light emitting signal to the second epitaxial stack 30, a third contact 40C for providing a light emitting signal to the third epitaxial stack 40, and a fourth contact 50C for applying a common voltage to the first, second, and third epitaxial stacks 20, 30, and 40. In an embodiment of the present invention, the first contact portion 20C, the second contact portion 30C, the third contact portion 40C, and the fourth contact portion 50C may be disposed at various positions when viewed from a plane.

The first contact 20C, the second contact 30C, the third contact 40C, and the fourth contact 50C may include a first pad 20pd, a second pad 30pd, a third pad 40pd, and a fourth pad 50pd, and a first bump electrode 20bp, a second bump electrode 30bp, a third bump electrode 40bp, and a fourth bump electrode 50bp, respectively.

The first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd are insulated and spaced from each other, respectively.

The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp may be insulated from each other by being spaced apart from each other, and disposed at regions overlapping the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 (i.e., light exit regions). The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp may be formed across edge portions of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40, respectively, and thus may cover side surfaces of the active layers of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40.

The first contact 20C includes a first pad 20pd and a first bump electrode 20bp electrically connected to each other. The first pad 20pd is disposed on the first p-type contact electrode 25p of the first epitaxial stack 20, and is connected to the first p-type contact electrode 25p through a first contact hole 20CH disposed on the first insulating film 81. At least a portion of the first bump electrode 20bp overlaps the first pad 20 pd. The first bump electrode 20bp is connected to the first pad 20pd through the first through hole 20ct with the second insulating film 83 interposed therebetween in a region overlapping with the first pad 20 pd.

The second contact 30C includes a second pad 30pd and a second bump electrode 30bp electrically connected to each other. The second pad 30pd is disposed on the second p-type contact electrode 35p, and is connected to the second p-type contact electrode 35p through a second contact hole 30CH formed in the first insulating film 81. At least a portion of the second bump electrode 30bp overlaps the second pad 30 pd. The second bump electrode 30bp is connected to the second pad 30pd through the second through hole 30ct with the second insulating film 83 interposed therebetween in a region overlapping with the second pad 30 pd.

The third contact portion 40C includes a third pad 40pd and a third bump electrode 40bp electrically connected to each other. The third pad 40pd is disposed on the third p-type contact electrode 45p, and is connected to the third p-type contact electrode 45p through a third contact hole 40CH formed in the first insulating film 81. At least a portion of the third bump electrode 40bp overlaps the third pad 40 pd. The third bump electrode 40bp is connected to the third pad 40pd through the third through hole 40ct with the second insulating film 83 interposed therebetween in a region overlapping with the third pad 40 pd.

The fourth contact 50C includes a fourth pad 50pd and a fourth bump electrode 50bp electrically connected to each other. The fourth pad 50pd is connected to the first, second, and third epitaxial stacks 20, 30, and 40 through first, second, and third sub-contact holes 50Cha, 50CHb, and 50CHc respectively disposed on the first, second, and third n-type contact electrodes 21n, the second, and third n-type semiconductor layers of the first, second, and third epitaxial stacks 20, 30, and 40, respectively. Here, a portion of the upper surface of the third epitaxial stack 40 is removed to expose the third n-type semiconductor layer, and the fourth pad 50pd is connected to the third n-type semiconductor layer of the third semiconductor layer.

Specifically, the fourth pad 50pd is connected to the first epitaxial stack 20 through a first sub-contact hole 50Cha provided on the first n-type contact electrode of the first epitaxial stack 20, connected to the second epitaxial stack 30 through a second sub-contact hole 50CHb provided on the second n-type semiconductor layer of the second epitaxial stack 30, and connected to the third epitaxial stack 40 through a third sub-contact hole 50CHc provided on the third n-type semiconductor layer of the third epitaxial stack 40. At least a portion of the fourth bump electrode 50bp overlaps the fourth pad 50 pd. The fourth bump electrode 50bp is connected to the fourth pad 50pd through the fourth through hole 50ct with the second insulating film 83 interposed therebetween in a region overlapping with the fourth pad 50 pd.

Although not shown in the drawings, in one embodiment of the present invention, the substrate 11 may be provided with a wiring portion (see fig. 5) which is provided corresponding to the first contact portion 20C, the second contact portion 30C, the third contact portion 40C, and the fourth contact portion 50C and is electrically connected to the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp, respectively, and/or a driving element such as a thin film transistor connected to the wiring portion. For example, to the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 may be attached: the first light emitting signal wiring to the third light emitting signal wiring, and light emitting signals are provided to the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40 through the first bump electrode 20bp, the second bump electrode 30bp, and the third bump electrode 40bp, respectively; and a common wiring for supplying a common voltage to the first, second, and third epitaxial stacks 20, 30, and 40, respectively, through the fourth bump electrode 50 bp. In this embodiment, the first to third light emitting signal wiring lines may correspond to the first to third scan wiring lines, respectively, and the common wiring line may correspond to the data wiring line.

Fig. 3a to 7b sequentially illustrate a method of manufacturing a light emitting element according to an embodiment of the present invention, where fig. 3a, 4a, 5a, 6a and 7a are plan views, and fig. 3b, 4b, 5b, 6b and 7b are cross-sectional views taken along line a-a' of fig. 3a, 4a, 5a, 6a and 7 a.

Referring to fig. 3a and 3b, a light emitting structure is formed on a substrate 11. The light emitting structure may be formed by growing the third epitaxial stack 40, the third p-type contact electrode 45p, the second adhesive layer 63, the second p-type contact electrode 35p, the second epitaxial stack 30, the first adhesive layer 61, the first p-type contact electrode 25p, the first epitaxial stack 20, and the first n-type contact electrode 21n in this order through various processes such as a chemical vapor deposition method, a metal organic chemical vapor deposition method, and a molecular beam deposition method.

The light emitting structure may be patterned into various shapes in consideration of the entire wiring connection structure and the like. For example, the positions of the contact holes, the through holes, and the pads may be considered to be polygonal when viewed from above.

According to an embodiment, the upper surfaces of the positions where the first, second, third and fourth contact holes 20CH, 30CH, 40CH and 50CH (refer to fig. 4a and 4b) are to be formed may be exposed by etching the first, second and third epitaxial stacks 20, 30 and 40 and portions of the first, second and third p-type contact electrodes 25p, 35p and 45p through an etching process.

Referring to fig. 4a and 4b, a first insulating film 81 may be conformally (conformally) formed on the vertically stacked light emitting structure. The first insulating film 81 may include an oxide, such as silicon oxide and/or silicon nitride.

The first insulating film 81 is patterned to remove a portion thereof, thereby forming the first contact hole 20CH, the second contact hole 30CH, the third contact hole 40CH, and the fourth contact hole 50 CH.

The first contact hole 20CH is arranged on the first p-type contact electrode 25p to expose a portion of the first p-type contact electrode 25 p. The second contact hole 30CH is disposed on the second epitaxial stack 30 to expose a portion of the second p-type contact electrode 35 p. The third contact hole 40CH is arranged on the third p-type contact electrode 45p to expose a portion of the third p-type contact electrode 45 p. The fourth contact hole 50CH includes a first sub-contact hole 50Cha, a second sub-contact hole 50CHb, and a third sub-contact hole 50CHc, and the first sub-contact hole 50Cha, the second sub-contact hole 50CHb, and the third sub-contact hole 50CHc are respectively disposed on the first n-type contact electrode 21n, the second n-type semiconductor layer of the second epitaxial stack 30, and the third n-type semiconductor layer of the third epitaxial stack 40 to expose a portion of the first n-type contact electrode 21n, the second n-type semiconductor layer of the second epitaxial stack 30, and the third n-type semiconductor layer of the third epitaxial stack 40.

Referring to fig. 5a and 5b, a first pad 20pd, a second pad 30pd, a third pad 40pd, and a fourth pad 50pd are formed on a first insulating film 81 in which a first contact hole 20CH, a second contact hole 30CH, a third contact hole 40CH, and a fourth contact hole 50CH are formed. The conductive film material for forming the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd may be formed of various conductive materials including metal, for example, at least one of Ni, Ag, Au, Pt, Ti, Al, and Cr.

The first, second, third and fourth pads 20pd, 30pd, 40pd and 50pd are formed to overlap portions where the first, second, third and fourth contact holes 20CH, 30CH, 40CH and 50CH are formed. Here, the fourth pad 50pd may be formed to simultaneously overlap portions where the first sub-contact hole 50Cha, the second sub-contact hole 50CHb, and the third sub-contact hole 50CHc are formed.

Referring to fig. 6a and 6b, a second insulating film 83 may be conformally (conformally) formed on the first insulating film 81. The second insulating film 83 may include an oxide, such as silicon oxide and/or silicon nitride.

The second insulating film 83 is patterned to remove a part thereof, thereby forming a first through hole 20ct, a second through hole 30ct, a third through hole 40ct, and a fourth through hole 50 ct.

The first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50ct are respectively disposed on the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd to expose a portion of the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50 pd.

Referring to fig. 7a and 7b, a first bump electrode 20bp, a second bump electrode 30bp, a third bump electrode 40bp, and a fourth bump electrode 50bp are formed on the second insulating film 83 having the first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50ct formed therein.

The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp are respectively formed to overlap with portions where the first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50ct are formed, and accordingly the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp are respectively connected to the first pad 20pd, the second pad 30pd, the third pad 40pd, and the fourth pad 50pd through the first through hole 20ct, the second through hole 30ct, the third through hole 40ct, and the fourth through hole 50 ct.

The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp may have areas larger than the corresponding first pad 20pd, second pad 30pd, third pad 40pd, and fourth pad 50 pd. Further, the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp may overlap at least a part of the light emission regions of the first epitaxial stack 20, the second epitaxial stack 30, and the third epitaxial stack 40, which emit light, when viewed in plan view.

The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp may be formed by plating using various metals. The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp may further include a seed layer (seed layer) for forming a metal layer in the plating process. Various metals, for example, metals including Cu, Ni, Ti, etc., can be used for the seed layer, and various modifications can be made depending on the metal material to be plated.

When the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp are formed by the plating method, the upper surfaces of the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp can be formed flat. The light emitting structure has an upper step due to etching or the like for forming a contact structure for connection with an external wiring, and thus when connecting with other elements, electrical connection between the other elements and the light emitting structure may be difficult when forming a general metal layer due to the step. However, in the case of formation by the plating method, an electrode having a flat upper surface can be formed even on a light emitting structure composed of an epitaxial layer having a large step difference. Further, the plated first bump electrode 20bp, second bump electrode 30bp, third bump electrode 40bp, fourth bump electrode 50bp may have flat upper surfaces themselves, but in order to improve the flatness, polishing may be additionally performed on the upper surfaces of the first bump electrode 20bp, second bump electrode 30bp, third bump electrode 40bp, fourth bump electrode 50 bp.

The first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp are not particularly limited as long as the wiring material used in the semiconductor device is used. For example, the alloy may be composed of a metal and/or a metal alloy such as SnAg, Sn, CuSn, CuN, CuAg, Sb, Ni, Zn, Mo, and Co. In an embodiment of the present invention, the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp may be formed of only Sn, or may be formed of Cu/Ni/Sn. In the case where the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp are formed of Cu/Ni/Sn, diffusion of impurities into the light emitting structure can be minimized, and in particular, Sn can be prevented from penetrating into the light emitting structure by using Cu as a material of the bump electrodes.

After the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp are formed by the plating method, the strength of the first bump electrode 20bp, the second bump electrode 30bp, the third bump electrode 40bp, and the fourth bump electrode 50bp can be increased by adding a heat treatment process (i.e., a reflow process).

In an embodiment of the present invention, the light emitting device having the above-described structure may be implemented as a package, and further mounted on another device (e.g., a printed circuit board) to function as a light emitting device package. Accordingly, various wirings can be additionally provided, and the structure can be easily attached to other devices.

Fig. 8a to 8d sequentially illustrate a method of manufacturing the light emitting element package. In fig. 8a and 8d, for convenience of description, the first to third epitaxial stacks are simplified as the light emitting structure 10, and the first to fourth pads and the first to fourth bump electrodes are also simplified as the pads pd and the bump electrodes bp. In particular, in the drawings, the light emitting structure 10 is illustrated as being flat in the upper surface, but has a step and/or a slope in the upper surface.

In an embodiment of the present invention, the light emitting element package may be formed by mounting at least one light emitting element 110 on a printed circuit board 11p or the like on which a wiring or the like is formed. In particular, the light emitting element package may include a plurality of light emitting elements 110.

Referring to fig. 8a, a printed circuit board 11p is prepared, and a plurality of light emitting elements 110 are arranged on the printed circuit board 11 p.

The printed circuit board 11p is formed with wiring and electrodes for electrical connection between various elements, and at least one light emitting element 110 may be mounted on the surface of the printed circuit board 11 p. The printed circuit board 11p may be provided in various forms according to the arrangement of its wiring, however, in the present embodiment, for convenience of explanation, a case where electrodes are provided on the front surface, the rear surface, and between the front surface and the rear surface of the substrate 11 is illustrated. However, the arrangement of the wiring of the printed circuit board 11p is not limited to this. In an embodiment of the present invention, the printed circuit board 11p may or may not have flexibility.

In one embodiment of the present invention, the printed circuit board 11p has a front side and a back side. The printed circuit board 11p is provided with an upper electrode 11pa on the front surface, a lower electrode 11pc on the rear surface, and a via hole electrode 11pb which penetrates the front surface and the rear surface of the printed circuit board 11p and connects the upper electrode 11pa and the lower electrode 11 pc. The front surface of the printed circuit board 11p is a surface on which the light emitting element 110 is mounted. In an embodiment of the present invention, the upper electrode 11pa of the printed circuit board 11p is formed at a position corresponding to the bump electrode bp of each light emitting element 110 to be attached later.

The wiring and/or electrodes on the printed circuit board 11p may be surface-treated with nickel-Gold (ENIG: electrode nickel Immersion Gold). For example, in an embodiment of the present invention, the upper electrode 11pa may be surface-treated with ENIG, among others. In the case where the wiring and/or the electrode on the printed circuit board 11p is subjected to ENIG treatment, a part is melted at a high temperature, and thus is easily connected to the bump electrode bp of the light emitting element 110.

The light emitting element 110 may be attached on the carrier substrate 11c to be disposed on the upper portion of the printed circuit board 11 p. The carrier substrate 11c is used for transporting the light emitting element 110, and has an adhesive layer 13 formed on one surface thereof, and the light emitting element 110 is attached to the carrier substrate 11c through the adhesive layer 13. The adhesive layer 13 may be a silicon-based polymer having high heat resistance and enabling the light emitting element 110 to be unloaded, and may be disposed on the lower surface of the carrier substrate 11c in a tape or sheet form. The adhesive layer 13 may be prepared to have an adhesive force to the extent that the light emitting element 110 can be stably attached to the carrier substrate 11c, and to the extent that the light emitting element 110 can be easily detached when attached to the printed circuit board 11 p. That is, the adhesive force of the adhesive layer 13 against the light emitting element 110 may have a value smaller than the adhesive force between the light emitting element 110 and the printed circuit board 11 p.

The light emitting element 110 may be attached to the lower portion of the carrier substrate 11c in an inverted state in which the substrate 11 is located at the upper portion and the light emitting structure 10 is located at the lower portion. Here, the light-emitting element 110 attached to the carrier substrate 11c has an inverted form as follows: the back surface of the substrate 11 is attached to the adhesive layer 13 on the carrier substrate 11c, and the substrate 11 is located on the upper side and the light emitting structure 10 is located on the lower side. The light emitting elements 110 are arranged on the printed circuit board 11p at intervals in a state of being attached to the carrier substrate 11 c.

Referring to fig. 8b, the light emitting element 110 is attached to the printed circuit board 11p, and the carrier substrate 11c and the adhesive layer 13 are removed. The light emitting element 110 attached on the carrier substrate 11c may be pressed from the upper portion toward the lower portion to bring the bump electrodes bp into contact with the corresponding upper electrodes 11pa of the printed circuit board 11 p. The pressing step may be performed at a high temperature, and a portion of the upper electrode 11pa on the printed circuit board 11p is melted to be connected to the bump electrode bp of the light emitting element 110. After that, the carrier substrate 11c is removed, and the adhesive layer 13 on the carrier substrate 11c has an adhesive force smaller than that of the bump electrode bp of the light emitting element 110 and the upper electrode 11pa of the printed circuit board 11p, so that the carrier substrate 11c can be easily separated from the light emitting element 110.

As described above, the bump electrode bp is attached to the upper electrode 11pa of the printed circuit board 11p, so that the entire structure is arranged in the order of the printed circuit board 11p, the bump electrode bp, the pad pd, the light emitting structure 10, and the substrate 11 from the lower portion toward the upper portion. Since light from light-emitting structure 10 travels from light-emitting structure 10 in the direction in which the back surface of substrate 11 faces (the upper direction in the drawing), the direction in which the front surface of printed circuit board 11p faces is the direction in which light is emitted.

Referring to fig. 8c, a molding layer 90 is formed on the printed circuit board 11p mounted with the light emitting element 110. The molding layer 90 has a property of transmitting at least a part of light, and reflects, scatters, and/or absorbs a part of external light. The molding layer 90 covers at least a portion of the light emitting element 110 and reflects, scatters, and/or absorbs a portion of external light in various directions, thereby preventing the external light from being reflected toward a specific direction, particularly, a direction that can be recognized by a user. Also, the molding layer 90 covers at least a portion of the light emitting element 110, thereby improving reliability of the light emitting element 110 by preventing the light emitting element 110 from being damaged due to moisture and/or physical impact from the outside.

The molding layer 90 is provided to be able to reflect, scatter and/or absorb a portion of external light in various directions, and particularly, the molding layer 90 may have a black color. However, in addition to black, in order to maximally prevent reflection of external light toward a user direction, a color other than black may be provided as long as a part of the external light can be reflected, scattered, and/or absorbed in various directions.

In order to prevent reflection of external light toward a specific direction, the molding layer 90 surrounds at least a portion of the light emitting element 110, and is particularly formed to cover the rear surface of the substrate 11 inside the light emitting element 110. In an embodiment of the present invention, the molding layer 90 is formed to cover the rear surface of the substrate 11, thereby preventing light from the outside from being reflected by the rear surface of the substrate 11 to be recognized by the eyes of the user. In order to prevent such reflection of external light to a specific direction, the molding layer 90 may reflect or scatter or absorb about 50% or more of the external light in various directions. In an embodiment of the present invention, the molding layer 90 may reflect or scatter or absorb more than about 80% of the external light.

The molding layer 90 may be formed to have a thickness capable of having light transmittance so that light from the light emitting structure 10 toward the rear surface direction (i.e., the upper side direction) of the substrate 11 can be maximally emitted. For example, the molding layer 90 may be formed to a thickness such that 50% or more of light from the light emitting structure is transmitted when disposed on the rear surface of the light emitting structure 10, and may be disposed to a thickness of 100 micrometers or less in height from the rear surface of the light emitting structure 10. Alternatively, the molding layer 90 may be provided to the extent that the height from the rear surface of the light emitting structure body 10 is less than the thickness of the light emitting element.

The molding layer 90 may be formed not only on the back surface side of the substrate 11 but also on the side surfaces of the light emitting element 110, that is, the side surface of the substrate 11 and the side surface of the light emitting structure 10. The molding layer 90 also covers the side of the light emitting element 110, so that at least a portion of light emitted through the side of the light emitting element 110 may be absorbed by the molding layer 90. Accordingly, the molding layer 90 can prevent light emitted from the light emitting structure 10 from being mixed with light emitted from the adjacent light emitting structure 10.

In an embodiment of the present invention, the molding layer 90 may be formed using an organic polymer that absorbs light among organic polymers. In an embodiment of the present invention, the molding layer 90 may include an organic/inorganic filler in its interior, or may not include it, in addition to the organic polymer. For example, in the case where the molding layer 90 includes a filler, the filler may be an inorganic filler. The inorganic filler may be various, and for example, silica, alumina, or the like may be mentioned.

Further, the molding layer 90 is filled in at least a part between the light emitting structure body 10 and the printed circuit board 11 p. That is, the molding layer 90 may be filled in the empty space between the light emitting structure 10 provided with the bump electrode bp and the printed circuit board 11 p. By filling the molding layer 90 in the space between the light emitting structure body 10 and the printed circuit board 11p, heat generated from the light emitting structure body 10 can be effectively dispersed, thereby improving the heat dissipation characteristics of the light emitting element 110.

In an embodiment of the present invention, the molding layer 90 may be manufactured in various manners, such as a lamination method, a plating method, a chemical vapor deposition method, a printing method, a transfer molding method, and the like. When the molding layer 90 is manufactured, various thin film processes may be used including an additional process for planarizing the surface of the molding layer 90. For example, for planarization of the surface of the molding layer 90, after plating, doctor blading (squeegeeing) may be performed before the material of the molding layer 90 is cured, or press planarization may be performed using a flat plate. Also, after curing the molding layer 90 material, polishing (polishing) or lapping (lapping) may be performed on the surface.

Among the methods for planarizing the surface of the molded layer 90, the lamination method may be a vacuum lamination (vacuum laminate) method performed in a vacuum. In this case, the molding layer 90 may be formed using an organic polymer sheet in a thin film form, and may be formed by heating and pressurizing under a vacuum atmosphere after the organic polymer sheet is disposed on the printed circuit board 11p on which the light emitting element 110 is mounted. A portion of the organic polymer sheet may exhibit fluidity at high temperature and high pressure, and since such fluidity may cause filling in the region between the light emitting elements 110 and the printed circuit board 11 p. Thereafter, the organic polymer sheet is cured. In an embodiment of the present invention, the molding layer 90 may be formed using a transfer molding method, so that the upper surface of the molding layer 90 can obtain a flat upper surface. The transfer molding may be formed by extrusion molding as follows: after a package of a predetermined unit to which a light emitting element is attached is set in a molding die, a resin liquefied from a solid state is pressed into the die to be molded.

In an embodiment of the present invention, the molding layer 90 is formed using a vacuum lamination method, so that the upper surface of the molding layer 90 can obtain a flat upper surface. Conventionally, the molding layer 90 is formed by a process of applying an organic polymer material and then curing, and in this case, a difference in the height of the upper surface is generated between a portion where the light emitting element 110 is mounted and a region where the light emitting element 110 is not mounted. The difference in the height of the upper surface causes non-uniformity of light emitted from the light emitting element 110. However, according to an embodiment of the present invention, by forming the upper surface of the molding layer 90 to be flat, the uniformity of light can be improved regardless of the position of the light emitting element 110.

Further, the light emitting element 110 is stably held by providing the molding layer 90, and therefore an effect of improving the rigidity of the light emitting element package can be obtained. In particular, the molding layer 90 may be filled into a space between the printed circuit board 11p and the light emitting element 110, thereby being able to have an effect of increasing the adhesive force of the printed circuit board 11p and the light emitting element 110. This further improves the rigidity of the entire light-emitting element package.

Referring to fig. 8d, after forming the molding layer 90, cutting is performed such that the printed circuit board 11p and the light emitting element 110 are included in the light emitting element package in an appropriate size, thereby forming the light emitting element package. In this case, the light emitting elements 110 may be individually separated and included, or a plurality of light emitting elements 110 may be included by cutting the light emitting elements in a large area. The number of the light emitting elements 110 at the time of cutting, the area thereof, and the like may be variously set according to the device to mount the light emitting elements 110 later.

In the light emitting element package, the number of light emitting elements mounted on the printed circuit board constituting one light emitting element package can be variously changed. Fig. 9a is a plan view illustrating a light emitting element package according to an embodiment of the present invention, which is an upper surface view illustrating a state in which four light emitting elements are mounted in a matrix shape on one printed circuit board, and fig. 9b is a rear surface view of the light emitting element package shown in fig. 9 a. Fig. 10 is a circuit diagram of the light emitting element package shown in fig. 9a and 9 b.

Referring to fig. 9a, 9b, and 10, the light emitting element package 110D includes a printed circuit board 11p and four light emitting elements 110 mounted in a 2 × 2 shape on the printed circuit board 11 p. However, the number and arrangement form of the light emitting element packages 110D are not limited thereto, and may be arranged in various matrix forms, for example, 1 × 1, 3 × 3, 4 × 4, and the like. As described above, each of the light emitting elements 110 has a structure in which the first to third epitaxial stacks are stacked in the vertical direction. Accordingly, the first to third epitaxial stacks correspond to respective light emitting diodes that generate light. For example, the first to third epitaxial stacks may correspond to a first light emitting diode emitting red light, a second light emitting diode emitting green light, and a third diode emitting blue light, respectively.

First, referring to fig. 10, in order to drive four light emitting elements, the first scan wiring SC1, the second scan wiring SC2, the third scan wiring SC3, the fourth scan wiring SC4, the fifth scan wiring SC5, the sixth scan wiring SC6, and the first data wiring DT1 and the second data wiring DT2 are connected to the four light emitting elements. When the four light emitting elements are referred to as a first light emitting element 110p, a second light emitting element 110q, a third light emitting element 110r, and a fourth light emitting element 110s, the first light emitting element 110p is connected to the first scan wiring SC1, the second scan wiring SC2, the third scan wiring SC3, and the first data wiring DT1, and the second light emitting element 110q is connected to the first scan wiring SC1, the second scan wiring SC2, the third scan wiring SC3, and the second data wiring DT 2. The third light emitting element 110r is connected to the fourth scan wiring SC4, the fifth scan wiring SC5, the sixth scan wiring SC6 and the first data wiring DT1, and the fourth light emitting element 110s is connected to the fourth scan wiring SC4, the fifth scan wiring SC5, the sixth scan wiring SC6 and the second data wiring DT 2.

The three light emitting diodes respectively included in the first, second, third and fourth light emitting elements 110p, 110q, 110r and 110s selectively emit light corresponding to a data signal input through the data wire when a scan signal is supplied through the scan wire. Each diode is connected between the scanning line and the data line, and emits light with a luminance corresponding to the magnitude of the applied voltage when a voltage equal to or higher than a threshold voltage is applied between the p-type semiconductor layer and the n-type semiconductor layer. That is, light emission of the respective light emitting diodes can be controlled by adjusting voltages of the scan signal applied through the scan wiring and/or the data signal applied through the data wiring. For example, each light emitting diode emits light at a luminance corresponding to the received data signal in each frame period. The light emitting diode receiving the data signal corresponding to the black luminance does not emit light during the corresponding frame period, thereby displaying black.

In an embodiment of the present invention, the first light emitting element 110p, the second light emitting element 110q, the third light emitting element 110r, and the fourth light emitting element 110s may be individually driven by providing six scan wirings and two data wirings as described above.

For this reason, the light emitting elements are mounted at corresponding positions on the printed circuit board 11 p. Referring again to fig. 9a and 9b, upper electrodes 11pa are provided on the front surface of the printed circuit board 11p at positions corresponding to the respective light emitting elements 110. That is, one light emitting element 110 has four bump electrodes bp, and four upper electrodes 11pa are provided for one light emitting element 110 on the printed circuit board 11 p. The four bump electrodes bp of each light emitting element 110 are arranged overlapping and connected with the four upper electrodes 11pa in a one-to-one manner.

In an embodiment of the invention, the first to third bump electrodes of the first to fourth bump electrodes of the first light emitting device 110 are respectively connected to the first to third scan wirings, and the fourth bump electrode is connected to the first data wiring. The first to third bump electrodes among the first to fourth bump electrodes of the second light emitting element 110 are connected to the first to third scan wirings, respectively, and the fourth bump electrode is connected to the second data wiring. The first to third bump electrodes among the first to fourth bump electrodes of the third light emitting element 110 are connected to the fourth to sixth scan wirings, respectively, and the fourth bump electrode is connected to the first data wiring. The first to third bump electrodes among the first to fourth bump electrodes of the fourth light emitting element 110 are connected to the fourth to sixth scan wirings, respectively, and the fourth bump electrode is connected to the second data wiring.

A total of eight lower electrodes are arranged on the rear surface of the printed circuit board 11 p. The eight lower electrodes correspond to first to sixth scan pads supplying scan signals to the first to sixth scan wirings and first and second data pads supplying data signals to the first and second data wirings. For example, if the eight lower electrodes formed on the rear surface of the printed circuit board 11p are referred to as a first lower electrode 11pc _1, a second lower electrode 11pc _2, a third lower electrode 11pc _3, a fourth lower electrode 11pc _4, a fifth lower electrode 11pc _5, a sixth lower electrode 11pc _6, a seventh lower electrode 11pc _7, and an eighth lower electrode 11pc _8, the first lower electrode 11pc _1, the second lower electrode 11pc _2, the third lower electrode 11pc _3, the fourth lower electrode 11pc _4, the fifth lower electrode 11pc _5, and the sixth lower electrode 11pc _6 correspond to the first to sixth scan pads, and the seventh and eighth lower electrodes 11pc _7 and 11pc _8 correspond to the first and second data pads. However, the arrangement and order of the first to sixth scan pads, the first data pad and the second data pad are not limited to this, and may be arranged in various shapes and areas on the back surface of the printed circuit board 11p, and the order may be set differently.

In an embodiment of the present invention, a distance between two lower electrodes adjacent to each other may be greater than a distance between two upper electrodes adjacent to each other. When the light emitting element package is formed, the lower electrode of the printed circuit board can function as a connection electrode for electrical connection with other electronic elements when the light emitting element package is attached to other electronic elements, and therefore, by forming the interval between two lower electrodes adjacent to each other to be wide, it is possible to make it easier to attach the light emitting element package to other electronic elements.

As described above, the light emitting element package according to an embodiment of the present invention can use a printed circuit board of a simple structure, and it is easy to mount a light emitting element capable of being driven individually onto the printed circuit board. Further, when four light emitting elements are driven, since only eight input terminals (i.e., eight lower electrodes) can be provided, a plurality of light emitting elements can be driven with a simple configuration.

According to an embodiment of the present invention, the following various aspects can be applied to different apparatuses: a single light emitting element package is used as a light source, or a plurality of light emitting element packages are mounted on a base substrate again and modularized to use the module as a light source. Examples of devices using the light-emitting element package(s) include display devices, life lighting devices, vehicle lighting (vehicle headlamps, head lamps, and tail lamps), and various decorative lighting devices.

Fig. 11 is an exemplary cross-sectional view illustrating a case where a plurality of light emitting element packages 110D are mounted on a base substrate 11b to manufacture a light source module for application to a display device, a vehicle lighting device, or the like.

Referring to fig. 11, a base substrate 11b on which wiring is formed may be prepared, and a plurality of light emitting element packages 110D may be mounted on the base substrate 11 b. The base substrate 11b may or may not have flexibility.

The wiring on the base substrate 11b is provided so as to correspond to the lower surface electrode of the light emitting element package 110D. The wiring on the base substrate 11b may be connected to the lower surface electrode of the light emitting element package through the connection electrode 11 s. In an embodiment of the present invention, the connection electrode 11s may be provided in the form of solder.

As shown in fig. 11, when a defect occurs in any one of the light emitting element packages in the case where the light emitting element package is mounted on the base substrate, it is possible to easily perform maintenance so that only the light emitting element package is replaced with a good product.

Fig. 12 is a plan view conceptually illustrating a case where a light emitting element package according to an embodiment of the present invention is applied to a display device, and fig. 13 is a plan view enlarging a portion P1 of fig. 12.

Referring to fig. 12 and 13, the light emitting element according to an embodiment of the present invention may be used as a pixel in a display device capable of displaying a plurality of colors. A plurality of light emitting elements may be mounted on the base substrate in the form of the light emitting element package 110D described above.

The display apparatus 100 according to an embodiment of the present invention displays arbitrary visual information, for example, text, video, photographs, two-dimensional or three-dimensional images, and the like.

The display device 100 may be provided in various shapes, and may be provided in various shapes such as a closed-form polygon including a straight line side such as a rectangle, a circle including a side constituted by a curve, an ellipse, and the like, a semicircle including a side constituted by a straight line and a curve, a semiellipse, and the like. In an embodiment according to the present invention, a case where the above display device is provided in a rectangular shape is illustrated.

The display device 100 has a plurality of pixels that display an image. Each pixel as a minimum unit of a display image can be realized by one light emitting element. Therefore, in the present embodiment, each pixel is displayed as 110. Each pixel 110 may include the light emitting element of the above-described structure, and emit white light and/or colored light.

In one embodiment of the present invention, each pixel includes a first pixel 110 emitting red light_RA second pixel 110 emitting green light_GA third pixel 110 emitting blue light_B. First pixel 110_RA second pixel 110_GA third pixel 110_BThe first to third epitaxial stacks may respectively correspond to the light emitting elements described above.

Third pixel 110_R、110_G、110_BThe emitted light is not limited to this, and at least two pixels may emit light of the same color as each other, or may emit light of different colors such as yellow, magenta, and cyan.

The pixels 110 are arranged in a row and column shape. Here, the meaning that the pixels 110 are arranged in a row-column shape does not merely mean that the pixels 110 are accurately arranged in a column along a row or a column, and the positions of the parts may be changed as follows: arranged in columns or rows as a whole but arranged in a zigzag shape, etc.

According to the present embodiment, lighting devices and the like having various sizes can be easily manufactured simply by mounting a plurality of light emitting element packages on a base substrate. For example, a large-area display device can be easily manufactured using a plurality of light emitting element packages. In addition, when the base substrate or the printed circuit board has flexibility, the display device may have flexibility, and thus, various forms of display devices, for example, a rollable display device, a foldable display device, a curved display device, and the like, can be easily manufactured.

Although the present invention has been described with reference to the preferred embodiments, it is to be understood that various modifications and alterations can be made by those skilled in the art or those having the basic knowledge in the art without departing from the spirit and scope of the present invention as set forth in the claims.

Therefore, the technical scope of the present invention is not limited to the details described in the specification, but is defined by the claims.