阅读说明：本技术 一种基于三维环流电感的集成片上变压器 (Integrated on-chip transformer based on three-dimensional circulating inductor ) 是由 刘阳 刘晓贤 卢启军 尹湘坤 朱樟明 杨银堂 于 2019-11-28 设计创作，主要内容包括：本发明涉及一种基于三维环流电感的集成片上变压器,包括自上而下依次设置的第一金属层、第二金属层、衬底层、第三金属层以及第四金属层,其中,第一金属层包括第一金属框以及设置在第一金属框内的若干第一连接件；第二金属层包括第二金属框以及设置在第二金属框内的若干第二连接件；衬底层中设置有若干玻璃通孔结构,若干玻璃通孔结构排列成m*n的阵列结构,其中,m≥2,n≥2；第三金属层包括若干第三连接件；第四金属层包括若干第四连接件；若干玻璃通孔结构通过若干第一连接件、若干第二连接件、若干第三连接件以及若干第四连接件依次首尾连接,形成三维环流结构。本发明的片上变压器的集成度高、Q值性能好、耦合度高。(The invention relates to an integrated on-chip transformer based on three-dimensional circulating inductance, which comprises a first metal layer, a second metal layer, a substrate layer, a third metal layer and a fourth metal layer which are sequentially arranged from top to bottom, wherein the first metal layer comprises a first metal frame and a plurality of first connecting pieces arranged in the first metal frame; the second metal layer comprises a second metal frame and a plurality of second connecting pieces arranged in the second metal frame; the substrate layer is provided with a plurality of glass through hole structures which are arranged into an m x n array structure, wherein m is more than or equal to 2, and n is more than or equal to 2; the third metal layer comprises a plurality of third connecting pieces; the fourth metal layer comprises a plurality of fourth connecting pieces; the plurality of glass through hole structures are sequentially connected end to end through the plurality of first connecting pieces, the plurality of second connecting pieces, the plurality of third connecting pieces and the plurality of fourth connecting pieces to form a three-dimensional circulation structure. The on-chip transformer has the advantages of high integration level, good Q value performance and high coupling degree.)

1. An integrated on-chip transformer based on three-dimensional circulating inductance is characterized by comprising a first metal layer (1), a second metal layer (2), a substrate layer (3), a third metal layer (4) and a fourth metal layer (5) which are sequentially arranged from top to bottom, wherein,

the first metal layer (1) comprises a first metal frame (101) and a plurality of first connecting pieces (102) arranged in the first metal frame (101);

the second metal layer (2) comprises a second metal frame (201) and a plurality of second connecting pieces (202) arranged in the second metal frame (201);

the substrate layer (3) is internally provided with a plurality of glass through hole structures (6), and the glass through hole structures (6) are arranged into an m x n array structure, wherein m is more than or equal to 2, and n is more than or equal to 2;

the third metal layer (4) comprises a plurality of third connecting pieces (401);

the fourth metal layer (5) comprises a plurality of fourth connecting pieces (501);

the plurality of glass through hole structures (6) are sequentially connected end to end through the plurality of first connecting pieces (102), the plurality of second connecting pieces (202), the plurality of third connecting pieces (401) and the plurality of fourth connecting pieces (501) to form a three-dimensional circulation structure.

2. The three-dimensional circulation inductor-based integrated on-chip transformer according to claim 1, wherein the number of the glass via structures (6) is even.

3. The three-dimensional circulating current inductance based integrated on-chip transformer of claim 2, wherein each of the through-glass via structures (6) comprises an outer metal ring (601), an intermediate dielectric ring (602) and an inner metal pillar (603) in sequence from outside to inside in a radial direction.

4. The integrated on-chip transformer based on the three-dimensional circulating current inductance is characterized in that the first connecting pieces (102) are respectively connected with the upper ends of the inner metal columns (603) of the corresponding glass through hole structures (6); the fourth connecting pieces (501) are respectively connected with the lower ends of the inner metal columns (603) of the corresponding glass through hole structures (6) to form an internal three-dimensional circulation structure.

5. The integrated on-chip transformer based on three-dimensional circulating current inductance according to claim 4, wherein a first end of the internal three-dimensional circulating current structure is used as a feeding end of the internal three-dimensional circulating current structure, and a second end of the internal three-dimensional circulating current structure is connected with the first metal frame (101).

6. The integrated on-chip transformer based on three-dimensional circulating current inductance according to claim 3, wherein the plurality of second connectors (202) are respectively connected with the upper ends of the outer metal rings (601) of the corresponding glass through hole structures (6); the third connecting pieces (401) are respectively connected with the lower ends of the outer metal rings (601) of the corresponding glass through hole structures (6) to form an external three-dimensional circulation structure.

7. The three-dimensional circulating current inductance based integrated on-chip transformer of claim 6, wherein the joints of the second connecting members (202) and the corresponding glass via structures (6) are etched with circular holes having the same diameter as the intermediate dielectric ring (602) so as to allow the upper ends of the intermediate dielectric ring (602) and the inner metal posts (603) to penetrate through;

and circular holes with the same diameter as the middle medium ring (602) are etched at the joints of the third connecting pieces (401) and the corresponding glass through hole structures (6), so that the middle medium ring (602) and the lower ends of the inner-layer metal columns (603) penetrate through the circular holes.

8. The integrated on-chip transformer based on three-dimensional circulating current inductance according to claim 7, wherein a first end of the external three-dimensional circulating current structure is used as a feeding end of the external three-dimensional circulating current structure, and a second end of the external three-dimensional circulating current structure is connected with the second metal frame (201).

9. The integrated on-chip transformer based on the three-dimensional circulating current inductance according to claim 1, wherein a first dielectric layer (7) is arranged between the first metal layer (1) and the second metal layer (2), a plurality of through holes are formed in the first dielectric layer (7), and the positions of the through holes correspond to the positions of the glass through hole structures (6) so that the glass through hole structures (6) can penetrate through the through holes.

10. The three-dimensional circulation inductor-based integrated on-chip transformer according to claim 1, wherein a second dielectric layer (8) is disposed between the third metal layer (4) and the fourth metal layer (5), the second dielectric layer (8) is provided with a plurality of through holes, and the positions of the through holes correspond to the positions of the glass through hole structures (6) so that the glass through hole structures (6) can pass through the through holes.

Technical Field

The invention belongs to the technical field of passive devices in radio frequency/microwave integrated circuits, and particularly relates to an integrated on-chip transformer based on a three-dimensional circulating inductor.

Background

With the demands of people on high broadband, high speed and miniaturization of electronic information systems, wireless communication frequency spectrums are expanded to millimeter wave bands, submillimeter wave bands and terahertz wave bands, and important millimeter wave integrated circuits in the systems become indispensable core chips. The increasingly advanced micro-nano electronic technology enables the integrated circuit technology to enter the nanometer era, the integrated circuit above the millimeter wave frequency band is in a large number, and the millimeter wave integrated circuit is more and more in demand in order to meet the application of a high-speed gigabit and large-bandwidth communication system, an intelligent transportation system, an automobile anti-collision system and an anti-terrorism security inspection system. With the reduction of process cost, design cost and test cost, the millimeter wave integrated circuit and the system application thereof become one of indispensable advanced technologies in the dual-purpose field of military and civil.

The on-chip transformer is an important passive device and is widely applied to the design of millimeter wave integrated circuits. The on-chip transformer is generally applied to module circuits such as a frequency multiplier, a power amplifier, a mixer low noise amplifier, a voltage controlled oscillator, and the like, so as to realize functions of conversion from a single-ended signal to a differential signal, impedance matching between stages, power synthesis, direct current isolation, low noise feedback, alternating current coupling, bandwidth expansion, and the like. In addition, the transformer is used for replacing transmission lines, inductors and the like, so that the chip area is reduced to a great extent, and the cost is reduced.

At present, most of single-chip transformers are built in a planar mode based on staggered layout. However, the substrate magnetic loss and ohmic loss are large in the planar geometry, and the planar transformer occupies too large a chip area, which makes it difficult to achieve a reduction in system weight. With the increasing demand of people on high-speed wireless mobile communication and high-performance chips, the development of small size and light weight of the transformer is urgent.

Disclosure of Invention

In order to solve the problems in the prior art, the invention provides an integrated on-chip transformer based on a three-dimensional circulating inductor. The technical problem to be solved by the invention is realized by the following technical scheme:

the invention provides an integrated on-chip transformer based on three-dimensional circulating inductance, which comprises a first metal layer, a second metal layer, a substrate layer, a third metal layer and a fourth metal layer which are sequentially arranged from top to bottom, wherein,

the first metal layer comprises a first metal frame and a plurality of first connecting pieces arranged in the first metal frame;

the second metal layer comprises a second metal frame and a plurality of second connecting pieces arranged in the second metal frame;

the substrate layer is internally provided with a plurality of glass through hole structures which are arranged into an m x n array structure, wherein m is more than or equal to 2, and n is more than or equal to 2;

the third metal layer comprises a plurality of third connecting pieces;

the fourth metal layer comprises a plurality of fourth connecting pieces;

the plurality of glass through hole structures are sequentially connected end to end through the plurality of first connecting pieces, the plurality of second connecting pieces, the plurality of third connecting pieces and the plurality of fourth connecting pieces to form a three-dimensional circulation structure.

In one embodiment of the present invention, the number of the glass via structures is an even number.

In one embodiment of the invention, each glass through hole structure comprises an outer metal ring, an intermediate medium ring and an inner metal column from outside to inside in sequence in the radial direction.

In one embodiment of the invention, the plurality of first connecting pieces are respectively connected with the upper ends of the inner-layer metal columns of the corresponding glass through hole structures; the fourth connecting pieces are respectively connected with the lower ends of the inner-layer metal columns of the corresponding glass through hole structures to form an internal three-dimensional circulation structure.

In one embodiment of the invention, a first end of the internal three-dimensional circulating current structure is used as a feeding end of the internal three-dimensional circulating current structure, and a second end of the internal three-dimensional circulating current structure is connected with the first metal frame.

In one embodiment of the invention, the plurality of second connecting pieces are respectively connected with the upper ends of the outer metal rings of the corresponding glass through hole structures; the third connecting pieces are respectively connected with the lower ends of the outer metal rings of the corresponding glass through hole structures to form an external three-dimensional circulation structure.

In an embodiment of the invention, a round hole with the same diameter as the intermediate medium ring is etched at the joint of the second connecting piece and the corresponding glass through hole structure, so that the intermediate medium ring and the upper end of the inner-layer metal column penetrate through the round hole;

and circular holes with the same diameter as the middle medium ring are etched at the joints of the third connecting pieces and the corresponding glass through hole structures, so that the middle medium ring and the lower ends of the inner-layer metal columns penetrate through the circular holes.

In an embodiment of the present invention, a first end of the external three-dimensional circulating current structure is used as a feeding end of the external three-dimensional circulating current structure, and a second end of the external three-dimensional circulating current structure is connected to the second metal frame.

In an embodiment of the present invention, a first dielectric layer is disposed between the first metal layer and the second metal layer, the first dielectric layer is provided with a plurality of through holes, and the positions of the through holes correspond to the positions of the glass through hole structures, so that the glass through hole structures penetrate through the through holes.

In an embodiment of the present invention, a second dielectric layer is disposed between the third metal layer and the fourth metal layer, the second dielectric layer is provided with a plurality of through holes, and the positions of the through holes correspond to the positions of the glass through hole structures, so that the glass through hole structures penetrate through the through holes.

Compared with the prior art, the invention has the beneficial effects that:

1. the integrated on-chip transformer based on the three-dimensional circulating inductor effectively utilizes huge idle space on a glass substrate based on the TGV technology, further reduces the area of a transfer plate occupied by an integrated passive device, improves the integration level, and can improve the Q value performance of a passive transformer by utilizing the characteristic of natural high resistivity of the glass substrate;

2. according to the integrated on-chip transformer based on the three-dimensional circulating current inductor, the primary coil completely wraps the secondary coil, so that the prepared on-chip transformer has high coupling degree.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

Fig. 1 is a perspective view of an integrated on-chip transformer based on three-dimensional circulating current inductance according to an embodiment of the present invention;

FIG. 2 is a front view of a substrate layer provided by an embodiment of the invention;

FIG. 3 is a front view of a first metal layer according to an embodiment of the present invention;

FIG. 4 is a front view of a second metal layer according to an embodiment of the present invention;

FIG. 5 is a front view of a third metal layer according to an embodiment of the present invention;

FIG. 6 is a front view of a fourth metal layer according to an embodiment of the present invention;

fig. 7 is a Q-value curve diagram of an integrated on-chip transformer based on a three-dimensional circulating inductor according to an embodiment of the present invention;

fig. 8 is a coupling coefficient graph of an integrated on-chip transformer based on three-dimensional circulating inductance according to an embodiment of the present invention;

fig. 9 is a graph of inductance values of an integrated on-chip transformer based on three-dimensional circulating inductors according to an embodiment of the present invention.

Description of the reference numerals

1-a first metal layer; 101-a first metal frame; 102-a first connector; 2-a second metal layer; 201-a second metal frame; 202-a second connector; 3-a substrate layer; 4-a third metal layer; 401-a third connection; 5-a fourth metal layer; 501-a fourth connecting piece; 6-glass via structure; 601-outer metal ring; 602-intermediate media ring; 603-inner metal columns; 7-a first dielectric layer; 8-a second dielectric layer.

Detailed Description

In order to further explain the technical means and effects of the present invention adopted to achieve the predetermined object, the following will explain in detail an integrated on-chip transformer based on three-dimensional circulating inductor according to the present invention with reference to the accompanying drawings and the detailed description.

The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments, which is to be read in connection with the accompanying drawings. The technical means and effects of the present invention adopted to achieve the predetermined purpose can be more deeply and specifically understood through the description of the specific embodiments, however, the attached drawings are provided for reference and description only and are not used for limiting the technical scheme of the present invention.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or device that comprises a list of elements does not include only those elements but may include other elements not expressly listed. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of additional like elements in the article or device comprising the element.

Example one

Referring to fig. 1, fig. 1 is a perspective view of an integrated on-chip transformer based on three-dimensional circulating current inductance according to an embodiment of the present invention, and as shown in the figure, the integrated on-chip transformer based on three-dimensional circulating current inductance according to the present embodiment includes a first metal layer 1, a second metal layer 2, a substrate layer 3, a third metal layer 4, and a fourth metal layer 5, which are sequentially disposed from top to bottom. The substrate layer 3 is provided with a plurality of glass through hole structures 6, and the plurality of glass through hole structures 6 are arranged in an array structure of m × n, wherein m is greater than or equal to 2, n is greater than or equal to 2, and in the embodiment, the number of the glass through hole structures 6 is an even number.

Referring to fig. 2 in combination, fig. 2 is a front view of a substrate layer according to an embodiment of the present invention, as shown in the figure, in this embodiment, 4 glass via structures 6 are disposed in a substrate layer 3 and arranged in a 2 × 2 array structure, where each glass via structure 6 sequentially includes an outer metal ring 601, an intermediate medium ring 602, and an inner metal pillar 603 from outside to inside in a radial direction, the outer metal ring 601 has a height equal to that of the substrate 301, and the intermediate medium ring 602 has a height equal to that of the inner metal pillar 603 and is greater than that of the outer metal ring 601. Preferably, the outer metal ring 601 and the inner metal pillar 603 are formed of copper or aluminum, the middle dielectric ring 602 is formed of polyimide, and the middle dielectric ring 602 serves as an electrical isolation medium between the outer metal ring 601 and the inner metal pillar 603.

Referring to fig. 3 and fig. 6 in combination, fig. 3 is a front view of a first metal layer according to an embodiment of the present invention, and fig. 6 is a front view of a fourth metal layer according to an embodiment of the present invention. As shown in the figure, the first metal layer 1 includes a first metal frame 101 and a plurality of first connectors 102 disposed in the first metal frame 101, and the plurality of first connectors 102 are used for interconnecting upper ends of the inner metal pillars 603 of the corresponding glass via structures 6. The fourth metal layer 5 includes a plurality of fourth connectors 501, and the plurality of fourth connectors 501 are used for interconnecting the lower ends of the inner metal pillars 603 of the corresponding glass via structures 6. The first connecting pieces 102, the inner metal columns 603 of the glass through-hole structures 6, and the fourth connecting pieces 501 are sequentially connected end to form an internal three-dimensional circulating structure, and the internal three-dimensional circulating structure is used as a secondary coil of the on-chip transformer in the embodiment. Preferably, the first metal frame 101, the first connection member 102, and the fourth connection member 501 are formed of copper or aluminum, and the first metal frame 101 is grounded. In this embodiment, the first end of the internal three-dimensional circulating current structure serves as a feeding end of the internal three-dimensional circulating current structure, and the second end of the internal three-dimensional circulating current structure is connected to the first metal frame 101, so that the secondary coil of the on-chip transformer is connected to a ground end.

Taking 2 x 2 of the glass via array in fig. 1 as an example to specifically describe the connection relationship of the internal three-dimensional circulating current structure, as shown in the figure, 3 first connecting members 102 are disposed in the first metal frame 101, the fourth metal layer 5 includes 2 fourth connecting members 501, the upper end of the inner metal pillar 603 of the first row of first glass via structures 6 is connected to one first connecting member 102, the lower end is connected to the lower end of the inner metal pillar 603 of the second row of first glass via structures 6 through one fourth connecting member 501, the upper end of the inner metal pillar 603 of the second row of first glass via structures 6 is connected to the upper end of the inner metal pillar 603 of the second row of second glass via structures 6 through one first connecting member 102, the lower end of the inner metal pillar 603 of the second row of second glass via structures 6 is connected to the lower end of the inner metal pillar 603 of the first row of second glass via structures 6 through one fourth connecting member 501, and then the upper ends of the inner metal columns 603 of the first row of second glass through hole structures 6 are connected with the first connecting piece 102 to form a three-dimensional circulating structure. The first connecting piece 102 connected with the upper ends of the inner metal columns 603 of the first glass through hole structure 6 in the first row is used as a feed end of the internal three-dimensional circulating current structure, and the first connecting piece 102 connected with the upper ends of the inner metal columns 603 of the first glass through hole structure 6 in the first row is connected with the first metal frame 101, so that the secondary coil of the on-chip transformer is connected to a ground end.

If the glass through hole array is a 2 x n array, the connection mode is similar to the 2 x 2 array connection mode, and all the silicon through hole structures 6 in two rows are connected in sequence to form an internal three-dimensional circulation structure.

If m and n in the glass via array are both greater than 2, taking a 4 × 4 glass via array as an example to specifically describe the connection relationship of the internal three-dimensional circulating structure, the upper end of the inner metal pillar 603 of the first row of the first glass via structure 6 is connected to the first connecting member 102, the lower end of the inner metal pillar 603 of the first row of the second glass via structure 6 is connected to the lower end of the inner metal pillar 603 of the first row of the second glass via structure 6 through the fourth connecting member 501, the upper end of the inner metal pillar 603 of the first row of the second glass via structure 6 is connected to the upper end of the inner metal pillar 603 of the first row of the third glass via structure 6 through the first connecting member 102, the lower end of the inner metal pillar 603 of the first row of the third glass via structure 6 is connected to the lower end of the inner metal pillar 603 of the first row of the fourth glass via structure 6 through the fourth connecting member 501, and the upper end of the inner metal pillar 603 of the first row of the fourth glass via structure The lower end of the inner metal column 603 of the second row and the fourth through-glass-via structure 6 is connected to the lower end of the inner metal column 603 of the third row and the fourth through-glass-via structure 6 through a fourth connecting member 501, the upper end of the inner metal column 603 of the third row and the fourth through-glass-via structure 6 is connected to the upper end of the inner metal column 603 of the fourth row and the fourth through-glass-via structure 6 through the first connecting member 102, the lower end of the inner metal column 603 of the fourth row and the fourth through-glass-via structure 6 is connected to the lower end of the inner metal column 603 of the fourth row and the fourth through-glass-via structure 6 through the fourth connecting member 501, the upper end of the inner metal column 603 of the fourth row and the fourth through-glass-via structure 6 is connected to the lower end of the inner metal column 603 of the fourth row and the fourth through-glass-via structure 6 through the fourth connecting member 501, the upper end of the inner metal column 603 of the fourth row of first through-glass-via structures 6 is connected to the upper end of the inner metal column 603 of the third row of first through-glass-via structures 6 through the first connector 102, the lower end of the inner metal column 603 of the third row of first through-glass-via structures 6 is connected to the lower end of the inner metal column 603 of the second row of first through-glass-via structures 6 through the fourth connector 501, the upper end of the inner metal column 603 of the second row of first through-glass-via structures 6 is connected to the upper end of the inner metal column 603 of the second row of second through-glass-via structures 6 through the first connector 102, the lower end of the inner metal column 603 of the second row of second through-glass-via structures 6 is connected to the lower end of the inner metal column 603 of the third row of third through-glass-via structures 6 through the fourth connector 501, the upper end of the inner metal column 603 of the second row of third through-glass-via structures 6 is connected, the lower end of the inner metal column 603 of the third row of the third glass via structure 6 is connected to the lower end of the inner metal column 603 of the third row of the second glass via structure 6 through the fourth connecting member 501, and then the upper end of the inner metal column 603 of the third row of the second glass via structure 6 is connected to the first connecting member 102 to form a three-dimensional circulating structure.

Referring to fig. 4 and fig. 5 in combination, fig. 4 is a front view of a second metal layer according to an embodiment of the present invention, and fig. 5 is a front view of a third metal layer according to an embodiment of the present invention. As shown in the figure, the second metal layer 2 includes a second metal frame 201 and a plurality of second connection members 202 disposed in the second metal frame 201, and the plurality of second connection members 202 are used for interconnecting upper ends of outer metal rings 601 of the corresponding glass via structures 6. The third metal layer 4 comprises a plurality of third connectors 401, and the plurality of third connectors 401 are used for interconnecting the lower ends of the outer metal rings 601 of the corresponding glass via structures 6. The plurality of second connecting members 202, the outer-layer metal rings 601 of the plurality of glass via structures 6, and the plurality of third connecting members 401 are sequentially connected end to form an external three-dimensional circulating structure, and the external three-dimensional circulating structure is used as a primary coil of the on-chip transformer in this embodiment. Preferably, the second metal frame 201, the second connection member 202, and the third connection member 401 are formed of metallic copper or aluminum, and the second metal frame 201 is grounded.

In this embodiment, circular holes having the same diameter as the intermediate dielectric ring 602 are etched at the joints of the second connecting member 202 and the third connecting member 401 and the corresponding glass via structures 6, so as to allow the intermediate dielectric ring 602 and the inner metal pillar 603 of the glass via structures 6 to pass through. The first end of the external three-dimensional circulating current structure is used as a feed end of the external three-dimensional circulating current structure, and the second end of the external three-dimensional circulating current structure is connected with the second metal frame 201, so that the primary coil of the on-chip transformer is connected to a ground end.

Taking the 2 x 2 glass via array in fig. 1 as an example to specifically describe the connection relationship of the external three-dimensional circulating current structure, as shown in the figure, 3 second connecting members 202 are disposed in the second metal frame 201, the third metal layer 4 includes 2 third connecting members 401, the upper end of the outer metal ring 601 of the first glass via structure 6 in the first row is connected to one second connecting member 202, the lower end is connected to the lower end of the outer metal ring 601 of the first glass via structure 6 in the second row through one third connecting member 401, the upper end of the outer metal ring 601 of the first glass via structure 6 in the second row is connected to the upper end of the outer metal ring 601 of the second glass via structure 6 in the second row through one second connecting member 202, the lower end of the outer metal ring 601 of the second glass via structure 6 in the second row is connected to the lower end of the outer metal ring 601 of the second glass via structure 6 in the first row through one third connecting member 401, then the upper end of the outer metal ring 601 of the second glass through hole structure 6 in the first row is connected with the second connecting piece 202 to form a three-dimensional circular current structure. The second connection member 202 connected to the upper end of the outer metal ring 601 of the first row of first glass via structures 6 serves as a feeding terminal of the external three-dimensional circulating current structure, and the second connection member 202 connected to the upper end of the outer metal ring 601 of the first row of second glass via structures 6 is connected to the second metal frame 201, so that the primary coil of the on-chip transformer is connected to a ground terminal.

If m and n in the glass through hole array are both larger than 2, the connection mode is similar to that of the internal three-dimensional circulation structure, and details are not repeated here.

Further, the integrated on-chip transformer based on the three-dimensional circulating current inductor of the present embodiment further includes a first dielectric layer 7 and a second dielectric layer 8, where the first dielectric layer 7 is disposed between the first metal layer 1 and the second metal layer 2, and the second dielectric layer 8 is disposed between the third metal layer 4 and the fourth metal layer 5. Preferably, the material of the first dielectric layer 7 and the second dielectric layer 8 is polyimide, which functions to achieve electrical isolation between the first metal layer 1 and the second metal layer 2 and electrical isolation between the third metal layer 4 and the fourth metal layer 5. A plurality of through holes are formed in the first dielectric layer 7 and the second dielectric layer 8, the positions of the through holes correspond to the positions of the glass through hole structures 6, the glass through hole structures 6 penetrate through the through holes, the aperture of each through hole is the same as the diameter of the middle dielectric ring 602 of each glass through hole structure 6, and the height of the middle dielectric ring 602 and the height of the inner metal column 603 are equal to the sum of the heights of the substrate layer 3, the first dielectric layer 7 and the second dielectric layer 8.

The integrated on-chip transformer based on the three-dimensional circulating current inductor of the embodiment is based on a TGV (Through Glass Via) technology, effectively utilizes a huge idle space on a Glass substrate, further reduces the area of a patch panel occupied by an integrated passive device, and improves the integration level.

Example two

In this embodiment, a simulation experiment is performed on the integrated on-chip transformer based on the three-dimensional circulating inductor in the first embodiment. Referring to fig. 7, 8 and 9, fig. 7 is a Q-value graph of an integrated on-chip transformer based on three-dimensional circulating inductor according to an embodiment of the present invention; fig. 8 is a coupling coefficient graph of an integrated on-chip transformer based on three-dimensional circulating inductance according to an embodiment of the present invention; fig. 9 is a graph of inductance values of an integrated on-chip transformer based on three-dimensional circulating inductors according to an embodiment of the present invention. As can be seen from fig. 7, the on-chip transformer according to the embodiment of the present invention has a high Q value, the Q value is 15 at most, as can be seen from fig. 8, the coupling coefficient of the on-chip transformer according to the embodiment of the present invention is greater than 0.70 within 10GHz, the coupling coefficient is high, and as can be seen from fig. 9, the resonance frequency of the on-chip transformer according to the embodiment of the present invention is above 20 GHz.

The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.