阅读说明：本技术 一种浮地型磁控忆阻模拟器 (Floating-ground magnetic control memristor simulator ) 是由 钱辉 袁永志 任康成 方文庆 于 2019-11-11 设计创作，主要内容包括：本发明涉及忆阻模拟器应用领域,特别涉及一种浮地型磁控忆阻模拟器,包括电阻R2、电阻R3、电阻R4、电流传输器AD844AN1、电容C1、电流传输器AD844AN2、电流传输器AD844AN3、乘法运算放大器AD633和运算放大器TL084,输入端与运算放大器TL084的正极相连,所述运算放大器TL084的负极通过电阻R2分别与乘法运算放大器AD633的W端和电流传输器AD844AN3的正极相连,所述运算放大器TL084的Z极通过电阻R4与电流传输器AD844AN1的负极连接,所述电阻R3的一端与运算放大器TL084的负极连接,另一端与运算放大器TL084的Z端连接。(The invention relates to the application field of memristive simulators, in particular to a floating magnetic control memristive simulator which comprises a resistor R2, a resistor R3, a resistor R4, a current transmitter AD844AN1, a capacitor C1, a current transmitter AD844AN2, a current transmitter AD844AN3, a multiplication operational amplifier AD633 and AN operational amplifier TL084, wherein the input end of the current transmitter AD 084 is connected with the positive electrode of the operational amplifier TL084, the negative electrode of the operational amplifier TL084 is respectively connected with the W end of the multiplication operational amplifier AD633 and the positive electrode of the current transmitter AD844AN3 through the resistor R2, the Z pole of the operational amplifier TL084 is connected with the negative electrode of the current transmitter AD844AN1 through the resistor R4, one end of the resistor R3 is connected with the negative electrode of the operational amplifier TL084, and the other end of the resistor R3 is connected with the Z end of the operational amplifier TL 084.)

1. The utility model provides a magnetic control of floating ground type memory resistance simulator which characterized in that: the current transformer comprises a resistor R2, a resistor R3, a resistor R4, a current transmitter AD844AN1, a capacitor C1, a current transmitter AD844AN2, a current transmitter AD844AN3, a multiplication operational amplifier AD633 and AN operational amplifier TL084, wherein the input end of the current transmitter AD844AN1 is connected with the positive electrode of the operational amplifier TL084, the negative electrode of the operational amplifier TL084 is respectively connected with the W end of the multiplication operational amplifier AD633 and the positive electrode of the current transmitter AD844AN3 through a resistor R2, the Z end of the operational amplifier TL084 is connected with the negative electrode of the current transmitter AD844AN1 through a resistor R4, one end of the resistor R3 is connected with the negative electrode of the operational amplifier TL084, the other end of the resistor R63084 is connected with the Z end of the operational amplifier, the positive electrode 844 of the current transmitter AD 1 is also connected with the input end, the Z end of the current transmitter AD 1 is grounded through a capacitor C1, the transmission end of the current transmitter AN 844AN1 is connected with the multiplication amplifier AD end of the W and the multiplication operational amplifier AD633, the Y1 end of the multiplication operational amplifier AD633 is connected with the input end, the negative end of the current transmitter AD844AN3 is connected with the output end, the Z end of the current transmitter AD844AN3 is connected with the Z end of the current transmitter AD844AN2, the positive electrode of the current transmitter AD844AN2 is grounded, and the negative electrode of the current transmitter AD844AN2 is connected with the input end.

2. The floating-ground magnetic control memristor simulator of claim 1, wherein: the power supply further comprises a resistor R1, and the resistor R1 is connected in series between the input end and the negative pole of the current transmitter AD844AN 2.

Technical Field

The invention relates to the application field of memristor simulators, in particular to a floating magnetic control memristor simulator.

Background

In 1971, professor zeiass predicts the existence of a circuit element, namely a 'memristor', directly related to two variables of charge and magnetic flux according to the principle of completeness of combination of circuit variables, and establishes a memristor device and system theory in 1976. In 2008, Strukov et al in Hewlett packard laboratory report the physical realization of the memristor on Nature for the first time, thereby rapidly exciting the research enthusiasm of the memristor and the application circuit thereof. However, because the nano technology adopted by the memristor has great difficulty in specific implementation and manufacturing, the memristor is not yet put on the market as an actual element. Therefore, the memristor equivalent circuit is designed and used for replacing an actual memristor to conduct experiments and application researches, and the memristor equivalent circuit has important significance.

In the early days, various equivalent circuits for realizing memristors by adopting existing analog discrete components, such as equivalent realization circuits based on mathematical models of HP TiO2 memristors, secondary and tertiary nonlinear magnetic control memristors and the like, and circuits realized by using analog-digital hybrid circuits and super-large scale digital circuits, appear. The equivalent circuits all work in a mode of grounding the output end, cannot be randomly connected into the circuit, and are limited to a certain extent when being applied.

Disclosure of Invention

The invention aims to overcome the defects in the prior art and provide a floating magnetic control memristor simulator which can be realized by using an operational amplifier, a multiplier, a resistor and a capacitor based on a general circuit component, and the reliable design of the floating memristor simulator is realized by using a current transmitter as a current mirror.

In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a floating-ground magnetic control memristor simulator comprises a resistor R2, a resistor R3, a resistor R4, a current transmitter AD844AN1, a capacitor C1, a current transmitter AD844AN2, a current transmitter AD844AN3, a multiplying operational amplifier AD633 and AN operational amplifier TL084, wherein the input end of the operational amplifier is connected with the positive electrode of AN operational amplifier TL084, the negative electrode of the operational amplifier TL084 is respectively connected with the W end of the multiplying operational amplifier AD633 and the positive electrode of the current transmitter AD844AN3 through a resistor R2, the Z pole of the operational amplifier TL084 is connected with the negative electrode of the current transmitter AD844AN1 through a resistor R4, one end of the resistor R3 is connected with the negative electrode of the operational amplifier TL084, the other end of the resistor R3 is connected with the Z end of the operational amplifier TL084, the positive electrode of the current transmitter AD844AN 36 is also connected with the input end, the Z end of the current transmitter AD 96844A 1 is connected with the multiplying end of the AD 3638 through a capacitor C3934 and the multiplying end of the operational amplifier TL 08A 3638, the X2 and Y2 ends of the multiplication operational amplifier AD633 are both grounded, the Y1 end of the multiplication operational amplifier AD633 is connected with the input end, the negative end of the current transmitter AD844AN3 is connected with the output end, the Z end of the current transmitter AD844AN3 is connected with the Z end of the current transmitter AD844AN2, the positive electrode of the current transmitter AD844AN2 is grounded, and the negative electrode of the current transmitter AD844AN2 is connected with the input end.

Preferably, the device also comprises a resistor R1, and the resistor R1 is connected in series between the input end and the negative pole of the current conveyor AD844AN 2.

The invention achieves the following beneficial effects: the floating-ground magnetic control memristor simulator mainly adopts three AD844 to realize current transmission, AD633 realizes a multiplication operation function, TL084 operational amplifier and resistors R2 and R3 realize subtraction operation, and a circuit design of the novel floating-ground magnetic control memristor simulator is built by utilizing a current feedback operational amplifier AD 844.

Drawings

FIG. 1 is a schematic structural diagram of a floating-ground magnetic control memristor simulator of the present invention;

FIG. 2 is a memristive simulator current-voltage characteristic under sinusoidal voltage excitation.

Detailed Description

The invention is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.

A floating-ground magnetic control memristor simulator comprises a resistor R2, a resistor R3, a resistor R4, a current transmitter AD844AN1, a capacitor C1, a current transmitter AD844AN2, a current transmitter AD844AN3, a multiplying operational amplifier AD633 and AN operational amplifier TL084, wherein the input end of the operational amplifier is connected with the positive electrode of AN operational amplifier TL084, the negative electrode of the operational amplifier TL084 is respectively connected with the W end of the multiplying operational amplifier AD633 and the positive electrode of the current transmitter AD844AN3 through a resistor R2, the Z pole of the operational amplifier TL084 is connected with the negative electrode of the current transmitter AD844AN1 through a resistor R4, one end of the resistor R3 is connected with the negative electrode of the operational amplifier TL084, the other end of the resistor R3 is connected with the Z end of the operational amplifier TL084, the positive electrode of the current transmitter AD844AN 36 is also connected with the input end, the Z end of the current transmitter AD 96844A 1 is connected with the multiplying end of the AD 3638 through a capacitor C3934 and the multiplying end of the operational amplifier TL 08A 3638, the X2 and Y2 ends of the multiplication operational amplifier AD633 are grounded, the Y1 end of the multiplication operational amplifier AD633 is connected with the input end, the negative end of the current transmitter AD844AN3 is connected with the output end, the Z end of the current transmitter AD844AN3 is connected with the Z end of the current transmitter AD844AN2, the positive electrode of the current transmitter AD844AN2 is grounded, and the negative electrode of the current transmitter AD844AN2 is connected with the input end; the power supply further comprises a resistor R1, and the resistor R1 is connected in series between the input end and the negative pole of the current transmitter AD844AN 2.

Mathematical modeling: the connection topology of a floating memristor simulator of the present embodiment is shown in fig. 1.

The definition for a memristive element is: if a two-terminal element, the magnetic flux at any one timeAnd the quantity of charge q (t) having an algebraic relationship

This relationship may be represented byOrA curve on the plane, the two-terminal element is called a memristive element. When equation (1) is represented by a single-valued function of charge, i.e.It is called charge control type memristor; accordingly, when equation (1) is expressed by a single-valued function of magnetic flux, i.e.It is called magnetic flux control type memristor. Therefore, the volt-ampere relation between the current i (t) flowing through the magnetic flux control type memristor (magnetic control memristor for short) and the voltage v (t) at the two ends of the magnetic flux control type memristor is shown as formula (2).

Wherein the content of the first and second substances,

is the memory of the magnetic control memory resistance,it is memristive. Thus, a magnetically controlled memristive model is proposed herein as follows.

Wherein a and b are normal numbers.

As can be seen from the formula (4), the memristorIs provided with

The circuit simulator design therefore includes three parts of operation: the design of a current generating circuit and a current mirror circuit realizes the floating function; secondly, the design of a voltage integrating circuit realizes magnetic fluxA function; and thirdly, designing a control circuit to realize the function of the formula (5). The method mainly relates to current integration, multiplication and the like, and the operation relation can be realized by analog integrated chips such as a general operational amplifier, a multiplier and the like. In order to enable the designed memristor simulator to be conveniently and randomly accessed into a circuit for use, the two-port floating design needs to be considered. The specific implementation circuit is shown in fig. 1, wherein the voltage at the port of the simulator is, and the current at the port is i_in。

In fig. 1, an AD844AN current conveyor has the following features: v. of₊＝v_-，v_w＝v_z，i₊＝0，i_-＝i_z. AD844AN2 and AD844AN3 constitute a current mirror circuit, and the negative terminal current of AD844 follows the Z-leg current, so the input current i_inIs transmitted from the negative end of the AD844AN2 to the AD844AN3 to realize the function of floating ground, wherein the input and output currents i_in＝v₁/R₁Voltage v₂＝v₅。

Operational amplifier TL084 and resistor R₂、R₃Implementing a subtraction operation, v₃At a voltage of

When R is₃＝R₂When, v₃＝2v₂-v₁. AD844AN1 and R₄Resistor and capacitor C₁Form an integral operation circuit, v₄Is a capacitor C₁Integral voltage of, then

And due to the magnetic fluxIs provided withSo formula (7) can be written as

For the two-input multiplier AD633 chip, the integrated voltage v is mainly completed₄And the input terminal voltage v₁Multiplication between, W port is output voltage v₅According to the working principle of the multiplier AD633, the output voltage v₅＝v₂＝v₁v₄/10. From the above analysis, the two-port voltage of the memristor circuit simulator shown in FIG. 1 can be obtained as

V is to be₁＝i_in R₁Can be substituted by the formula (9).

When a ═ R is compared with formula (4), it is found that₁，b＝R₁/10R₄C₁And the circuit realizes the simulation of the magnetic control memristor model. Under the circuit parameters shown in fig. 1, the circuit simulator parameters of the magnetically controlled memristor designed herein: r₁＝R₂＝R₃＝R₄＝20kΩ，C₁＝1μF。

Under the circuit parameter setting shown in fig. 1, Multisim software is adopted, different alternating excitation voltages are applied to ports, and the basic electrical characteristics of the memristor simulator designed in the text are researched. Fig. 2 can be obtained by applying sine wave voltage u (t) Asin (2 pi ft) to the port of fig. 1, measuring input voltage u (t) and input current i (t) with a value of a 4V and a value of f 100 Hz.

Therefore, the simulator with the floating-ground memristor function can be constructed through the circuit structure design.

The above is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.