阅读说明：本技术 一种双氧化组分铝蚀刻液、其制备方法与应用 (Double-oxidation-component aluminum etching solution, and preparation method and application thereof ) 是由 童晨 吴海燕 韩成强 孙元 陈桂红 于 2020-12-24 设计创作，主要内容包括：本发明提供一种双氧化组分铝蚀刻液、其制备方法与应用。该双氧化组分铝蚀刻液包括第一氧化组分和第二氧化组分,其中,第一氧化组分和第二氧化组分质量比为1～2:3～5；第一氧化组分各组分及各组分含量为硝酸10～30wt％、醋酸盐缓冲溶液10～20wt％以及去离子水；第二氧化组分各组分以及各组分含量为双氧水10～30wt％、醋酸盐缓冲溶液10～20wt％、磷酸20～50wt％、阳离子表面活性剂10～20wt％以及去离子水。本申请提供的一种双氧化组分铝蚀刻液,能够快速蚀刻铝基金属,蚀刻速率约为并且添加的醋酸盐缓冲溶液能够控制蚀刻角度,蚀刻角度可控制在20～50°,可广泛的用于铝基半导体装置中。同时所述双氧化组分铝蚀刻液的制备方法简单易行、绿色环保是一种安全经济的制备工艺。(The invention provides a double-oxidation-component aluminum etching liquid, and a preparation method and application thereof. The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1-2: 3-5; each component of the first oxidation component and the content of each component are 10-30 wt% of nitric acid, 10-20 wt% of acetate buffer solution and deionized water; the second oxidation component comprises 10-30 wt% of hydrogen peroxide, 10-20 wt% of acetate buffer solution, 20-50 wt% of phosphoric acid, 10-20 wt% of cationic surfactant and deionized water. The application provides a two oxidation component aluminium etching solution, can etch aluminium base metal fast, and etching rate is about)

1. The double-oxidation-component aluminum etching solution is characterized by comprising a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1-2: 3-5;

each component of the first oxidation component and the content of each component are 10-30 wt% of nitric acid, 10-20 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 10-30 wt% of hydrogen peroxide, 10-20 wt% of acetate buffer solution, 20-50 wt% of phosphoric acid, 10-20 wt% of cationic surfactant and deionized water.

2. The double-oxidation-component aluminum etching solution as claimed in claim 1, wherein the purity of the nitric acid is 95-99%.

3. The double-oxidation-component aluminum etching solution as claimed in claim 1, wherein the acetate buffer solution has a pH of 3.0 to 4.0;

preferably, the acetate buffer solution is prepared by dissolving ammonium acetate in deionized water, adding hydrochloric acid solution, and adjusting pH with ammonia water;

preferably, the concentration of the ammonia water is 0.1-1.0 mol/L.

4. The double-oxidation-component aluminum etching solution as claimed in claim 1, wherein the hydrogen peroxide is 5-20 wt%;

preferably, the mass fraction of the phosphoric acid is 95-98%.

5. The dual oxide aluminum etching solution of claim 1 wherein the cationic surfactant is at least one selected from the group consisting of primary amine salt surfactants, secondary amine salts and tertiary amine salt surfactants.

6. A double-oxidation-component aluminum etching solution for preparing the double-oxidation-component aluminum etching solution as set forth in any one of claims 1 to 5, which comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 1-3 h, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 h at 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

7. The method for preparing double-oxidation-component aluminum etching solution as claimed in claim 6, wherein the pH of the acetate buffer solution is 3.0-4.0,

preferably, the acetate buffer solution is prepared by dissolving ammonium acetate in deionized water, adding hydrochloric acid solution, and adjusting pH with ammonia water;

preferably, the concentration of the ammonia water is 0.1-1.0 mol/L.

8. The method for preparing double-oxidation-component aluminum etching solution according to claim 6, wherein the purity of the nitric acid is 95% -99%;

preferably, the mass fraction of the hydrogen peroxide is 5 wt% -20 wt%;

preferably, the mass fraction of the phosphoric acid is 95-98%;

preferably, the cationic surfactant is selected from at least one of primary amine salt surfactants, secondary amine salts, and tertiary amine salt surfactants.

9. Use of a dual oxide aluminum etchant solution prepared according to any one of claims 1 to 5 or prepared according to any one of claims 6 to 8 in an aluminum-based device.

10. Use according to claim 9, wherein the dual oxide component aluminum etching solution is used in aluminum-based semiconductor elements.

Technical Field

The application relates to a double-oxidation-component aluminum etching solution, in particular to a double-oxidation-component aluminum etching solution, a preparation method and application thereof in an aluminum-based semiconductor device.

Background

Aluminum metal is the most important material for conductive lines in semiconductor fabrication because of its low resistance, easy deposition and etching, and its conductivity is inferior to silver and copper, which is the third place, and it can be used for manufacturing various conductive lines.

The aluminum etching liquid is colorless transparent liquid with slightly acidic odor, and in the prior art, an aqueous solution mainly composed of phosphoric acid and nitric acid is used as the aluminum etching liquid. However, when the etching solution prepared by the method is used for etching aluminum metal, the etching speed is slow, the etching angle and the etching amount are often difficult to control, and the yield and the etching rate of the product are influenced.

Therefore, how to provide an aluminum-based semiconductor device with high etching speed, controlled etching angle and etching amount and high performance is a problem to be solved.

Disclosure of Invention

The invention aims to provide a double-oxidation-component aluminum etching solution, a preparation method and application thereof, so as to overcome the defects that the etching speed of the etching solution is low, the etching angle and the etching amount are often difficult to control, and the yield and the etching rate of a product are influenced when the etching solution etches aluminum metal in the prior art.

In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:

the double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1-2: 3-5;

each component of the first oxidation component and the content of each component are 10-30 wt% of nitric acid, 10-20 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 10-30 wt% of hydrogen peroxide, 10-20 wt% of acetate buffer solution, 20-50 wt% of phosphoric acid, 10-20 wt% of cationic surfactant and deionized water.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 3.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 4.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 5.

Optionally, the first and second oxidizing components are present in a mass ratio of 2: 3.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 2.

Optionally, the first and second oxidizing components are present in a mass ratio of 2: 5.

Optionally, the upper mass fraction limit of nitric acid is selected from 15 wt%, 20 wt%, 25 wt%, 30 wt%; the lower limit of the mass fraction of the nitric acid is selected from 10 wt%, 15 wt%, 20 wt% and 25 wt%.

Optionally, the upper limit of the mass fraction of acetate buffer solution in the first oxidation component is selected from 12 wt%, 14 wt%, 16 wt%, 18 wt%, 20 wt%; the lower limit of the mass fraction of the acetate buffer solution in the first oxidation component is selected from 10 wt%, 12 wt%, 14 wt%, 16 wt%, 18 wt%.

Optionally, the upper limit of the mass fraction of the hydrogen peroxide is selected from 12 wt%, 15 wt%, 20 wt%, 22 wt%, 25 wt%, 28 wt%, 30 wt%; the lower limit of the mass fraction of the hydrogen peroxide is selected from 10 wt%, 12 wt%, 15 wt%, 20 wt%, 22 wt%, 25 wt% and 28 wt%.

Optionally, the upper limit of the mass fraction of acetate buffer solution in the second oxidizing component is selected from 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%; the lower limit of the mass fraction of acetate buffer solution in the second oxidizing component is selected from 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%.

Optionally, the upper limit of the mass fraction of phosphoric acid is selected from 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%.

Optionally, the cationic surfactant has an upper mass fraction limit selected from 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%; the lower limit of the mass fraction of the cationic surfactant is selected from 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%.

Optionally, the purity of the nitric acid is 95% -99%.

Optionally, the nitric acid purity is 96%.

Optionally, the nitric acid purity is 97%.

Optionally, the nitric acid purity is 98%.

Optionally, the pH of the acetate buffer solution is 3.0-4.0.

Alternatively, the upper pH limit of the acetate buffer solution is selected from 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, 4.0; the lower limit of the pH of the acetate buffer solution is selected from 3.0, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8 and 3.9.

Optionally, the acetate buffer solution is prepared by dissolving ammonium acetate in deionized water, adding a hydrochloric acid solution, and adjusting pH with ammonia water.

Optionally, the concentration of the ammonia water is 0.1-1.0 mol/L.

Optionally, the upper concentration limit of the ammonia water is selected from 0.2mol/L, 0.3mol/L, 0.4mol/L, 0.5mol/L, 0.6mol/L, 0.7mol/L, 0.8mol/L, 0.9mol/L, 1.0 mol/L; the lower limit of the concentration of the ammonia water is selected from 0.1mol/L, 0.2mol/L, 0.3mol/L, 0.4mol/L, 0.5mol/L, 0.6mol/L, 0.7mol/L, 0.8mol/L and 0.9 mol/L.

Optionally, the mass fraction of the hydrogen peroxide is 5 wt% to 20 wt%.

Optionally, the mass fraction of the hydrogen peroxide is 10 wt%.

Optionally, the mass fraction of the hydrogen peroxide is 15 wt%.

Optionally, the mass fraction of the phosphoric acid is 95% to 98%.

Optionally, the mass fraction of phosphoric acid is 96%.

Optionally, the mass fraction of phosphoric acid is 97%.

Optionally, the cationic surfactant is selected from at least one of a primary amine salt surfactant, a secondary amine salt surfactant, and a tertiary amine salt surfactant.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 1-3 h, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 h at 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

The double-oxidation-component aluminum etching liquid is applied to an aluminum-based device.

The double-oxidation-component aluminum etching solution is applied to aluminum-based semiconductor elements.

Compared with the prior art, the invention has the advantages that: the application provides a two oxidation component aluminium etching solution, can etch aluminium base metal fast, and etching rate is aboutAnd the added acetate buffer solution can control the etching angle, the etching angle can be controlled within 20-50 degrees, and the method can be widely used in aluminum-based semiconductor devices. Meanwhile, the preparation method of the double-oxide component aluminum etching solution is simple and easy to implement, green and environment-friendly, and is a safe and economic preparation process.

Detailed Description

In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1-2: 3-5;

each component of the first oxidation component and the content of each component are 10-30 wt% of nitric acid, 10-20 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 10-30 wt% of hydrogen peroxide, 10-20 wt% of acetate buffer solution, 20-50 wt% of phosphoric acid, 10-20 wt% of cationic surfactant and deionized water.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 3.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 4.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 5.

Optionally, the first and second oxidizing components are present in a mass ratio of 2: 3.

Optionally, the mass ratio of the first oxidizing component to the second oxidizing component is 1: 2.

Optionally, the first and second oxidizing components are present in a mass ratio of 2: 5.

Optionally, the upper mass fraction limit of nitric acid is selected from 15 wt%, 20 wt%, 25 wt%, 30 wt%; the lower limit of the mass fraction of the nitric acid is selected from 10 wt%, 15 wt%, 20 wt% and 25 wt%.

Optionally, the upper limit of the mass fraction of acetate buffer solution in the first oxidation component is selected from 12 wt%, 14 wt%, 16 wt%, 18 wt%, 20 wt%; the lower limit of the mass fraction of the acetate buffer solution in the first oxidation component is selected from 10 wt%, 12 wt%, 14 wt%, 16 wt%, 18 wt%.

Optionally, the upper limit of the mass fraction of the hydrogen peroxide is selected from 12 wt%, 15 wt%, 20 wt%, 22 wt%, 25 wt%, 28 wt%, 30 wt%; the lower limit of the mass fraction of the hydrogen peroxide is selected from 10 wt%, 12 wt%, 15 wt%, 20 wt%, 22 wt%, 25 wt% and 28 wt%.

Optionally, the upper limit of the mass fraction of acetate buffer solution in the second oxidizing component is selected from 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%; the lower limit of the mass fraction of acetate buffer solution in the second oxidizing component is selected from 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%.

Optionally, the upper limit of the mass fraction of phosphoric acid is selected from 20 wt%, 25 wt%, 30 wt%, 35 wt%, 40 wt%, 45 wt%, 50 wt%.

Optionally, the cationic surfactant has an upper mass fraction limit selected from 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%, 20 wt%; the lower limit of the mass fraction of the cationic surfactant is selected from 10 wt%, 11 wt%, 12 wt%, 13 wt%, 14 wt%, 15 wt%, 16 wt%, 17 wt%, 18 wt%, 19 wt%.

Optionally, the purity of the nitric acid is 95% -99%.

Optionally, the nitric acid purity is 96%.

Optionally, the nitric acid purity is 97%.

Optionally, the nitric acid purity is 98%.

Optionally, the pH of the acetate buffer solution is 3.0-4.0.

Alternatively, the upper pH limit of the acetate buffer solution is selected from 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8, 3.9, 4.0; the lower limit of the pH of the acetate buffer solution is selected from 3.0, 3.1, 3.2, 3.3, 3.4, 3.5, 3.6, 3.7, 3.8 and 3.9.

Optionally, the acetate buffer solution is prepared by dissolving ammonium acetate in deionized water, adding a hydrochloric acid solution, and adjusting pH with ammonia water.

Optionally, the concentration of the ammonia water is 0.1-1.0 mol/L.

Optionally, the upper concentration limit of the ammonia water is selected from 0.2mol/L, 0.3mol/L, 0.4mol/L, 0.5mol/L, 0.6mol/L, 0.7mol/L, 0.8mol/L, 0.9mol/L, 1.0 mol/L; the lower limit of the concentration of the ammonia water is selected from 0.1mol/L, 0.2mol/L, 0.3mol/L, 0.4mol/L, 0.5mol/L, 0.6mol/L, 0.7mol/L, 0.8mol/L and 0.9 mol/L.

Optionally, the mass fraction of the hydrogen peroxide is 5 wt% to 20 wt%.

Optionally, the mass fraction of the hydrogen peroxide is 10 wt%.

Optionally, the mass fraction of the hydrogen peroxide is 15 wt%.

Optionally, the mass fraction of the phosphoric acid is 95% to 98%.

Optionally, the mass fraction of phosphoric acid is 96%.

Optionally, the mass fraction of phosphoric acid is 97%.

Optionally, the cationic surfactant is selected from at least one of a primary amine salt surfactant, a secondary amine salt surfactant, and a tertiary amine salt surfactant.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 1-3 h, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 h at 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

The double-oxidation-component aluminum etching liquid is applied to an aluminum-based device.

The double-oxidation-component aluminum etching solution is applied to aluminum-based semiconductor elements.

The technical solution of the present invention is further explained below with reference to several examples.

Each of the substances in the examples is commercially available.

Example 1

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1: 3;

each component of the first oxidation component and the content of each component are 10 wt% of nitric acid, 20 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 30 wt% of hydrogen peroxide, 10 wt% of acetate buffer solution, 20 wt% of phosphoric acid, 10 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 1h, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3h at the temperature of 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

Example 2

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1: 4;

each component of the first oxidation component and the content of each component are 15 wt% of nitric acid, 20 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 15 wt% of hydrogen peroxide, 20 wt% of acetate buffer solution, 20 wt% of phosphoric acid, 15 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 2 hours, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 4 hours at the temperature of 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

Example 3

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1: 5;

the contents of all components of the first oxidation component and all components are 20 wt% of nitric acid, 15 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 20 wt% of hydrogen peroxide, 15 wt% of acetate buffer solution, 25 wt% of phosphoric acid, 15 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 2 hours, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 hours at the temperature of 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

Example 4

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 2: 3;

the contents of all components of the first oxidation component and all components are 25 wt% of nitric acid, 20 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 20 wt% of hydrogen peroxide, 15 wt% of acetate buffer solution, 45 wt% of phosphoric acid, 15 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 3 hours, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 hours at the temperature of 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

Example 5

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 2: 5;

each component of the first oxidation component and the content of each component are 15 wt% of nitric acid, 20 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 10 wt% of hydrogen peroxide, 20 wt% of acetate buffer solution, 40 wt% of phosphoric acid, 15 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 3 hours, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 hours at the temperature of 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

Example 6

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1: 5;

the contents of all components of the first oxidation component and all components are 20 wt% of nitric acid, 15 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 18 wt% of hydrogen peroxide, 18 wt% of acetate buffer solution, 25 wt% of phosphoric acid, 18 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 1h, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 h at 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

Example 7

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1: 4;

each component of the first oxidation component and the content of each component are 22 wt% of nitric acid, 15 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 25 wt% of hydrogen peroxide, 18 wt% of acetate buffer solution, 35 wt% of phosphoric acid, 15 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 2 hours, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 hours at the temperature of 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

Example 8

The double-oxidation-component aluminum etching solution comprises a first oxidation component and a second oxidation component, wherein the mass ratio of the first oxidation component to the second oxidation component is 1: 3;

the contents of all components of the first oxidation component and all components are 25 wt% of nitric acid, 16 wt% of acetate buffer solution and deionized water;

the second oxidation component comprises 24 wt% of hydrogen peroxide, 14 wt% of acetate buffer solution, 30 wt% of phosphoric acid, 14 wt% of cationic surfactant and deionized water.

The preparation method of the double-oxidation-component aluminum etching solution comprises the following steps:

(1) a first oxidation component: dropwise adding nitric acid into deionized water, dissolving into acetate buffer solution, and stirring at room temperature until the nitric acid and the acetate buffer solution are uniformly mixed to obtain a first oxidation component;

(2) a second oxidizing component: dissolving hydrogen peroxide in deionized water, adding phosphoric acid under the stirring condition, stirring for 2 hours, then dropwise adding a cationic surfactant, finally dropwise adding an acetate buffer solution, and stirring for 3-5 hours at the temperature of 20-30 ℃ to obtain a second oxidation component;

(3) and mixing the first oxidation component and the second oxidation component according to a certain proportion to prepare the double-oxidation-component aluminum etching solution.

When the double-oxidation-component aluminum etching solution prepared in the embodiment 1 to the embodiment 8 is used for an aluminum-based semiconductor, the etching rate is aboutThe etching angle can be controlled to be 20-50 deg.

It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.