阅读说明：本技术 差分异质互连通孔等效电路及其分布参数的全波提取方法 (Differential heterogeneous interconnection through hole equivalent circuit and full wave extraction method of distribution parameters thereof ) 是由 张玉明 赵冉冉 吕红亮 王依璇 谭戴导 于 2020-11-20 设计创作，主要内容包括：本发明实施例提供的一种差分异质互连通孔等效电路的分布参数的全波提取方法,获取差分异质互连通孔的物理结构的三维模型以及基于该三维模型建立的等效电路,使用该等效电路实现差分异质互连通孔的分析,可以降低计算等效电路分布参数复杂度,计算该三维模型的差分S参数矩阵,基于所述差模散射参量矩阵和共模散射参量矩阵,计算该等效电路的差模特征阻抗、共模特征阻抗、奇模传播常数以及偶模传播常数,基于所述等效电路的差模特征阻抗、共模特征阻抗、奇模传播常数以及偶模传播常数,计算该等效电路的分布参数,可以降低分析差分异质互连通孔的复杂度。(The full wave extraction method of the distribution parameters of the differential heterogeneous interconnection through hole equivalent circuit provided by the embodiment of the invention obtains the three-dimensional model of the physical structure of the differential heterogeneous interconnection through hole and the equivalent circuit established based on the three-dimensional model, realizes the analysis of the differential heterogeneous interconnection through hole by using the equivalent circuit, the complexity of calculating the distribution parameters of the equivalent circuit can be reduced, a difference S parameter matrix of the three-dimensional model is calculated, the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit are calculated based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix, the distribution parameters of the equivalent circuit are calculated based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit, and the complexity of analyzing the differential heterogeneous interconnection through holes can be reduced.)

1. A differential heterogeneous interconnection via equivalent circuit, comprising: a first equivalent resistor (R1), a second equivalent resistor (R2), a first equivalent loop self-inductance (L1), a second equivalent loop self-inductance (L2), a first equivalent loop mutual inductance (L2)_m1) The second equivalent loop mutual inductance (L)_m2) A first equivalent conductance (G1), a second equivalent conductance (G2), an equivalent mutual conductance (G2)_m) A first equivalent capacitor (C1), a second equivalent capacitor (C2) and an equivalent mutual capacitor (C2)_m) The first equivalent loop self-inductance (L1) and the first equivalent loop mutual inductance (L1)_m1) The difference is the first equivalent inductance (L-L)_m) The second equivalent loop self-inductance (L2) and the second equivalent loop mutual inductance (L2)_m2) The difference is the second equivalent inductance (L2-L)_m2) One end of the first equivalent conductance (G1) is connected with one end of the first equivalent capacitor (C1) and then connected with a power ground, and the other end of the first equivalent conductance (G1) is connected with the other end of the first equivalent capacitor (C1) and then respectively connected with one end of the first equivalent resistor (R1) and the equivalent mutual conductance (G1)_m) And the equivalent mutual capacitance(C_m) Is connected to the positive terminal of the signal source, and the equivalent mutual conductance (G)_m) And the other end of (C) and the equivalent mutual capacitance (C)_m) After being connected with each other, the other end of the first equivalent resistor (R1) is respectively connected with one end of a second equivalent resistor (R2), one end of a second equivalent capacitor (C2) and one end of a second equivalent conductance (G2) and is connected with the negative end of a signal source, the other end of the second equivalent capacitor (C2) is connected with the other end of the second equivalent conductance (G2) and then is connected with a power ground, and the other end of the first equivalent resistor (R1) is connected with a first equivalent inductor (L1-L)_m1) Is connected to the second equivalent inductor (L1-L)_m1) The other end of the second equivalent resistor (R2) is connected with the positive end of the signal output end, and the other end of the second equivalent resistor (R2) is connected with the second equivalent inductor (L2-L)_m2) Is connected to the second equivalent inductor (L2-L)_m2) The other end of the second switch is connected with the negative end of the signal output end.

2. A full wave extraction method of distribution parameters of a differential heterogeneous interconnection through hole equivalent circuit is characterized by comprising the following steps:

acquiring a three-dimensional model of a physical structure of a differential heterogeneous interconnection through hole and an equivalent circuit established based on the three-dimensional model;

calculating a difference S parameter matrix of the three-dimensional model;

wherein the S parameter matrix comprises: a differential mode scattering parameter matrix and a common mode scattering parameter matrix;

calculating differential mode characteristic impedance, common mode characteristic impedance, odd mode propagation constant and even mode propagation constant of the equivalent circuit based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix;

and calculating the distribution parameters of the equivalent circuit based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit.

3. The full-wave extraction method of claim 2, wherein the equivalent circuit comprises: a first equivalent resistor (R1), a second equivalent resistor (R2), a first equivalent loop self-inductance (L1),A second equivalent loop self-inductance (L2), a first equivalent loop mutual inductance (L)_m1) The second equivalent loop mutual inductance (L)_m2) A first equivalent conductance (G1), a second equivalent conductance (G2), an equivalent mutual conductance (G2)_m) A first equivalent capacitor (C1), a second equivalent capacitor (C2) and an equivalent mutual capacitor (C2)_m) The first equivalent loop self-inductance (L1) and the first equivalent loop mutual inductance (L1)_m1) The difference is the first equivalent inductance (L-L)_m) The second equivalent loop self-inductance (L2) and the second equivalent loop mutual inductance (L2)_m2) The difference is the second equivalent inductance (L2-L)_m2) One end of the first equivalent conductance (G1) is connected with one end of the first equivalent capacitor (C1) and then connected with a power ground, and the other end of the first equivalent conductance (G1) is connected with the other end of the first equivalent capacitor (C1) and then respectively connected with one end of the first equivalent resistor (R1) and the equivalent mutual conductance (G1)_m) And the equivalent mutual capacitance (C)_m) Is connected to the positive terminal of the signal source, and the equivalent mutual conductance (G)_m) And the other end of (C) and the equivalent mutual capacitance (C)_m) After being connected with each other, the other end of the first equivalent resistor (R1) is respectively connected with one end of a second equivalent resistor (R2), one end of a second equivalent capacitor (C2) and one end of a second equivalent conductance (G2) and is connected with the negative end of a signal source, the other end of the second equivalent capacitor (C2) is connected with the other end of the second equivalent conductance (G2) and then is connected with a power ground, and the other end of the first equivalent resistor (R1) is connected with a first equivalent inductor (L1-L)_m1) Is connected to the second equivalent inductor (L1-L)_m1) The other end of the second equivalent resistor (R2) is connected with the positive end of the signal output end, and the other end of the second equivalent resistor (R2) is connected with the second equivalent inductor (L2-L)_m2) Is connected to the second equivalent inductor (L2-L)_m2) The other end of the second switch is connected with the negative end of the signal output end.

4. The method of claim 2, wherein the step of calculating the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit based on the differential mode scattering parametric matrix and the common mode scattering parametric matrix comprises:

calculating differential mode characteristic impedance, common mode characteristic impedance, odd mode propagation constant and even mode propagation constant of the equivalent circuit by using a preset first parameter calculation formula based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix;

wherein, the first parameter calculation formula is:

wherein Z is_diff0Representing the characteristic impedance of the differential mode, Z_comm0Representing the characteristic impedance of the common mode, beta representing the propagation constant of the odd mode, beta_eDenotes the even mode propagation constant, Δ_diff＝S_d1d1S_d2d2-S_d1d2S_d2d1，Δ_comm＝S_c1c1S_c2c2-S_c1c2S_c2c1，Z₀50 omega, the differential mode scattering parameter matrix isThe common mode scattering parametric matrix is:

5. the full-wave extraction method of claim 4, wherein the step of calculating the distribution parameters of the equivalent circuit based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit comprises:

calculating distribution parameters of the equivalent circuit by using a second parameter calculation formula based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit;

wherein, the distribution parameters include: a value of the first equivalent resistance (R1), a value of the second equivalent resistance (R2), a value of the first equivalent loop self-inductance (L1), a value of the second equivalent loop self-inductance (L2), a value of the first equivalent loop mutual inductance (L2)_m1) Value of (d), second equivalent loop mutual inductance (L)_m2) A value of (a), a value of a first equivalent conductance (G1), a value of a second equivalent conductance (G2), an equivalent mutual conductance (G2)_m) A value of the first equivalent capacitance (C1), a value of the second equivalent capacitance (C2), and an equivalent mutual capacitance (C2)_m) A value of (d);

the second parameter calculation formula is as follows:

G_i＝2Re(β_e/Z_comm)_i

G_m＝Re(β_o/Z_diff)₁-Re(β_e/Z_comm)₁＝Re(β_o/Z_diff)₂-Re(β_e/Z_comm)₂

C_i＝2Im(β_e/Z_comm)_i/ω

C_m＝(Im(β_o/Z_diff)₁-Im(β_e/Z_comm)₁)/ω＝(Im(β_o/Z_diff)₂-Im(β_e/Z_comm)₂)/ω

gi, wherein the value of i is 1 and 2, the value of Ri equivalent resistance, Lmi represents the value of equivalent inductance, Gi represents the value of equivalent conductance, Ci represents the value of equivalent capacitance, G_mRepresenting the value of the equivalent mutual conductance, G_mRepresenting the value of equivalent mutual capacitance, Re () representing the real part of the expression in brackets, Im () representing the imaginary part of the expression in brackets, omega being the operating angular frequency of the differential heterogeneous interconnection via,

(β_oZ_diff)₁＝2(R₁+jω(L₁-L_m1))

(β_oZ_diff)₂＝2(R₂+jω(L₂-L_m2))

(β_eZ_comm)₁＝2(R₁+jω(L₁+L_m1))

(β_eZ_comm)₂＝2(R₂+jω(L₂+L_m2))

(β_o/Z_diff)₁＝(G₁+jωC₁)/2+(G_m+jωC_m)

(β_o/Z_diff)₂＝(G₂+jωC₂)/2+(G_m+jωC_m)

(β_e/Z_comm)₁＝(G₁+jωC₁)/2

(β_e/Z_comm)₂＝(G₂+jωC₂) And/2, j is a virtual unit.

Technical Field

The invention belongs to the technical field of integrated circuits, and particularly relates to a differential heterogeneous interconnected pore equivalent circuit and a full-wave extraction method of distribution parameters thereof.

Background

Monolithic heterogeneous integration is a technique for integrating one or more compound semiconductor materials on a semiconductor material substrate by epitaxial layer transfer techniques, thereby integrating circuit modules of different materials on the same chip through a three-dimensional structure, fully utilizing the technical advantages of various semiconductor materials to form the whole high-performance circuit system, thereby realizing high-density integration of various materials, devices and circuits, fully utilizing the excellent performances of various materials and different device types in the prior semiconductor process, in the parts with different performance requirements, the semiconductor device and the process which best meet the performance requirements are adopted to form complementary advantages and realize the maximization of the performance of various functional modules, thereby improving the performance of the whole integrated circuit to the maximum extent and meeting the increasingly high performance requirements of the integrated circuit in the later Moore times.

In a monolithic heterogeneous integrated circuit with a three-dimensional structure, heterogeneous interconnection through holes are key components for realizing electrical connection between a bottom layer circuit and an upper layer circuit, and therefore become key components influencing the overall performance of a system. The heterogeneous interconnection through holes can be generally divided into single-ended heterogeneous interconnection through holes and differential heterogeneous interconnection through holes, the single-ended heterogeneous interconnection through holes are simple in structure, but weak in coupling noise suppression capacity and large in transmission loss, differential signals are generally used in an ultra-high-speed integrated circuit system in order to guarantee the transmission performance of high-speed signals, and the single-ended heterogeneous interconnection through holes cannot guarantee signal integrity in a differential transmission technology. Therefore, the differential heterogeneous interconnection via is an essential component for realizing an ultra-high-speed three-dimensional monolithic heterogeneous integrated system, which can transmit differential signals through a pair of heterogeneous interconnection vias.

The structural cross-sectional view of the differential heterogeneous interconnection through holes is shown in fig. 1, each heterogeneous interconnection through hole needs to pass through three different substrate layers of a bottom semiconductor material, a BCB layer and a top semiconductor material, the coupling effect between the heterogeneous interconnection through holes and the substrate and the coupling effect between the heterogeneous interconnection through holes are more complex, the traditional equivalent circuit structure and distribution parameter extraction method based on physical significance brings great calculation amount and even is difficult to calculate, recalculation is needed when different through hole sizes and materials are considered, and the calculation difficulty and the manpower and material resource consumption are increased.

Disclosure of Invention

In order to solve the above problems in the prior art, the present invention provides a full-wave extraction method for an equivalent circuit of differential heterogeneous interconnected vias and the distribution parameters thereof. The technical problem to be solved by the invention is realized by the following technical scheme:

in a first aspect, the present invention provides an equivalent circuit of a differential heterogeneous interconnection, including: the first equivalent resistor R1, the second equivalent resistor R2, the first equivalent loop self-inductance L1, the second equivalent loop self-inductance L2 and the first equivalent loop mutual inductance L_m1Mutual inductance L of second equivalent loop_m2A first equivalent conductance G1, a second equivalent conductance G2, an equivalent mutual conductance G_mA first equivalent capacitor C1, a second equivalent capacitor C2 and an equivalent mutual capacitor C_mThe first equivalent loop self-inductance L1 and the first equivalent loop mutual inductance L_m1The difference is the first equivalent inductance L-L_mThe second equivalent loop self-inductance L2 and the second equivalent loop mutual inductance L_m2The difference is the second equivalent inductance L2-L_m2One end of the first equivalent conductance G1 is connected to one end of the first equivalent capacitor C1 and then connected to ground, and the other end of the first equivalent conductance G1 is connected to the other end of the first equivalent capacitor C1 and then connected to one end of the first equivalent resistor R1 and the equivalent mutual conductance G_mAnd the equivalent mutual capacitance C_mIs connected to the positive terminal of the signal source, and the equivalent mutual conductance G_mAnd the other end of (C) and the equivalent mutual capacitance C_mAfter being connected, the other end of the first equivalent resistor R1 is respectively connected with one end of the second equivalent resistor R2, one end of the second equivalent capacitor C2 and one end of the second equivalent conductance G2 and is connected to the negative end of a signal source, the other end of the second equivalent capacitor C2 is connected with the other end of the second equivalent conductance G2 and is connected to the power ground, and the other end of the first equivalent resistor R1 is connected with the first equivalent inductance L1-L_m1Is connected to the second equivalent inductor L1-L_m1The other end of the second equivalent resistor R2 and the second equivalent inductor L2-L_m2Is connected to one end of saidSecond equivalent inductance L2-L_m2The other end of the second switch is connected with the negative end of the signal output end.

In a second aspect, the present invention provides a full-wave extraction method for distribution parameters of an equivalent circuit of a differential heterogeneous interconnection via, including:

acquiring a three-dimensional model of a physical structure of a differential heterogeneous interconnection through hole and an equivalent circuit established based on the three-dimensional model;

calculating a difference S parameter matrix of the three-dimensional model;

wherein the S parameter matrix comprises: a differential mode scattering parameter matrix and a common mode scattering parameter matrix;

calculating differential mode characteristic impedance, common mode characteristic impedance, odd mode propagation constant and even mode propagation constant of the equivalent circuit based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix;

and calculating the distribution parameters of the equivalent circuit based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit.

Optionally, the equivalent circuit includes: the first equivalent resistor R1, the second equivalent resistor R2, the first equivalent loop self-inductance L1, the second equivalent loop self-inductance L2 and the first equivalent loop mutual inductance L_m1Mutual inductance L of second equivalent loop_m2A first equivalent conductance G1, a second equivalent conductance G2, an equivalent mutual conductance G_mA first equivalent capacitor C1, a second equivalent capacitor C2 and an equivalent mutual capacitor C_mThe first equivalent loop self-inductance L1 and the first equivalent loop mutual inductance L_m1The difference is the first equivalent inductance L-L_mThe second equivalent loop self-inductance L2 and the second equivalent loop mutual inductance L_m2The difference is the second equivalent inductance L2-L_m2One end of the first equivalent conductance G1 is connected to one end of the first equivalent capacitor C1 and then connected to ground, and the other end of the first equivalent conductance G1 is connected to the other end of the first equivalent capacitor C1 and then connected to one end of the first equivalent resistor R1 and the equivalent mutual conductance G_mAnd the equivalent mutual capacitance C_mIs connected to the positive terminal of the signal source, and the equivalentMutual conductance G_mAnd the other end of (C) and the equivalent mutual capacitance C_mAfter being connected, the other end of the first equivalent resistor R1 is respectively connected with one end of the second equivalent resistor R2, one end of the second equivalent capacitor C2 and one end of the second equivalent conductance G2 and is connected to the negative end of a signal source, the other end of the second equivalent capacitor C2 is connected with the other end of the second equivalent conductance G2 and is connected to the power ground, and the other end of the first equivalent resistor R1 is connected with the first equivalent inductance L1-L_m1Is connected to the second equivalent inductor L1-L_m1The other end of the second equivalent resistor R2 and the second equivalent inductor L2-L_m2Is connected to the second equivalent inductor L2-L_m2The other end of the second switch is connected with the negative end of the signal output end.

Optionally, the step of calculating the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix includes:

calculating differential mode characteristic impedance, common mode characteristic impedance, odd mode propagation constant and even mode propagation constant of the equivalent circuit by using a preset first parameter calculation formula based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix;

wherein, the first parameter calculation formula is:

wherein Z is_diff0Representing the characteristic impedance of the differential mode, Z_comm0Representing the characteristic impedance of the common mode, beta representing the propagation constant of the odd mode, beta_eDenotes the even mode propagation constant, Δ_diff＝S_d1d1S_d2d2-S_d1d2S_d2d1，Δ_comm＝S_c1c1S_c2c2-S_c1c2S_c2c1，Z₀50 omega, the differential mode scattering parameter matrix isThe common mode scattering parametric matrix is:

optionally, the step of calculating the distribution parameter of the equivalent circuit based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant, and the even mode propagation constant of the equivalent circuit includes:

calculating distribution parameters of the equivalent circuit by using a second parameter calculation formula based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit;

wherein, the distribution parameters include: a value of the first equivalent resistance R1, a value of the second equivalent resistance R2, a value of the first equivalent loop self inductance L1, a value of the second equivalent loop self inductance L2, a value of the first equivalent loop mutual inductance L_m1Value of (1), second equivalent loop mutual inductance L_m2The value of the first equivalent conductance G1, the value of the second equivalent conductance G2, the equivalent mutual conductance G_mA value of the first equivalent capacitance C1, a value of the second equivalent capacitance C2, and an equivalent mutual capacitance C_mA value of (d);

the second parameter calculation formula is as follows:

G_i＝2Re(β_e/Z_comm)_i

G_m＝Re(β_o/Z_diff)₁-Re(β_e/Z_comm)₁＝Re(β_o/Z_diff)₂-Re(β_e/Z_comm)₂

C_i＝2Im(β_e/Z_comm)_i/ω

C_m＝(Im(β_o/Z_diff)₁-Im(β_e/Z_comm)₁)/ω＝(Im(β_o/Z_diff)₂-Im(β_e/Z_comm)₂)/ω

gi, wherein the value of i is 1 and 2, the value of Ri equivalent resistance, Lmi represents the value of equivalent inductance, Gi represents the value of equivalent conductance, Ci represents the value of equivalent capacitance, G_mRepresenting the value of the equivalent mutual conductance, G_mRepresenting the value of equivalent mutual capacitance, Re () representing the real part of the expression in brackets, Im () representing the imaginary part of the expression in brackets, omega being the operating angular frequency of the differential heterogeneous interconnection via,

j is a dummy unit.

The full wave extraction method of the distribution parameters of the differential heterogeneous interconnection through hole equivalent circuit provided by the embodiment of the invention obtains the three-dimensional model of the physical structure of the differential heterogeneous interconnection through hole and the equivalent circuit established based on the three-dimensional model, realizes the analysis of the differential heterogeneous interconnection through hole by using the equivalent circuit, the complexity of calculating the distribution parameters of the equivalent circuit can be reduced, a difference S parameter matrix of the three-dimensional model is calculated, the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit are calculated based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix, the distribution parameters of the equivalent circuit are calculated based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit, and the complexity of analyzing the differential heterogeneous interconnection through holes can be reduced.

The present invention will be described in further detail with reference to the accompanying drawings and examples.

Drawings

FIG. 1 is a diagram of a differential heterogeneous interconnect via structure;

FIG. 2 is a diagram of an equivalent circuit structure of a DIFFERENTIAL INTERCONNECT via according to the present invention;

FIG. 3 is a flow chart of a full-wave extraction method for distribution parameters of an equivalent circuit structure of a DIF interconnect.

Detailed Description

The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.

Example one

As shown in fig. 2, an equivalent circuit of a differential heterogeneous interconnection provided in an embodiment of the present invention includes: the first equivalent resistor R1, the second equivalent resistor R2, the first equivalent loop self-inductance L1, the second equivalent loop self-inductance L2 and the first equivalent loop mutual inductance L_m1Mutual inductance L of second equivalent loop_m2A first equivalent conductance G1, a second equivalent conductance G2, an equivalent mutual conductance G_mA first equivalent capacitor C1, a second equivalent capacitor C2 and an equivalent mutual capacitor C_mThe first equivalent loop self-inductance L1 and the first equivalent loop mutual inductance L_m1The difference is the first equivalent inductance L-L_mThe second equivalent loop self-inductance L2 and the second equivalent loop mutual inductance L_m2The difference is the second equivalent inductance L2-L_m2One end of the first equivalent conductance G1 is connected to one end of the first equivalent capacitor C1 and then connected to ground, and the other end of the first equivalent conductance G1 is connected to the other end of the first equivalent capacitor C1 and then connected to the first equivalent capacitor C1 and then connected to groundOne end of resistor R1 and the equivalent mutual conductance G_mAnd the equivalent mutual capacitance C_mIs connected to the positive terminal of the signal source, and the equivalent mutual conductance G_mAnd the other end of (C) and the equivalent mutual capacitance C_mAfter being connected, the other end of the first equivalent resistor R1 is respectively connected with one end of the second equivalent resistor R2, one end of the second equivalent capacitor C2 and one end of the second equivalent conductance G2 and is connected to the negative end of a signal source, the other end of the second equivalent capacitor C2 is connected with the other end of the second equivalent conductance G2 and is connected to the power ground, and the other end of the first equivalent resistor R1 is connected with the first equivalent inductance L1-L_m1Is connected to the second equivalent inductor L1-L_m1The other end of the second equivalent resistor R2 and the second equivalent inductor L2-L_m2Is connected to the second equivalent inductor L2-L_m2The other end of the second switch is connected with the negative end of the signal output end.

According to the differential heterogeneous interconnection through hole equivalent circuit established by the invention, the coupling effect between the differential heterogeneous interconnection through hole and the substrate and the proximity effect between the two differential heterogeneous interconnection through holes are considered, and the distribution parameter representation is adopted, so that the accuracy of the result is ensured, meanwhile, fewer circuit elements are included, the deep analysis of the differential heterogeneous interconnection through hole is facilitated, and the difficulty in parameter extraction is reduced.

The invention discloses an equivalent circuit of a differential heterogeneous interconnected pore, which comprises a first equivalent resistor R1, a second equivalent resistor R2, a first equivalent loop self-inductance L1, a second equivalent loop self-inductance L2, a first equivalent loop mutual inductance L2_m1Mutual inductance L of second equivalent loop_m2A first equivalent conductance G1, a second equivalent conductance G2, an equivalent mutual conductance G_mA first equivalent capacitor C1, a second equivalent capacitor C2 and an equivalent mutual capacitor C_mThe equivalent circuit is simple in structure, and the equivalent circuit is used for analyzing the differential heterogeneous interconnection through holes, so that the complexity of calculating the distribution parameters of the equivalent circuit can be reduced, and the complexity of analyzing the differential heterogeneous interconnection through holes can be reduced.

Example two

As shown in fig. 3, a full-wave extraction method for distribution parameters of an equivalent circuit of a differential heterogeneous interconnection via according to an embodiment of the present invention includes:

s31, acquiring a three-dimensional model of the physical structure of the differential heterogeneous interconnection through hole and an equivalent circuit established based on the three-dimensional model;

it is understood that a three-dimensional model of the differential heterogeneous interconnect via can be built in full-wave simulation software HFSS, i.e. the differential heterogeneous interconnect via is drawn.

S32, calculating a difference S parameter matrix of the three-dimensional model;

wherein the S parameter matrix comprises: a differential mode scattering parameter matrix and a common mode scattering parameter matrix;

the process of calculating the differential mode scattering parameter matrix and the common mode scattering parameter matrix of the differential heterogeneous interconnection through hole is the same as the method in the full-wave simulation software HFSS, and the details are not repeated here.

S33, calculating differential mode characteristic impedance, common mode characteristic impedance, odd mode propagation constant and even mode propagation constant of the equivalent circuit based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix;

and S34, calculating the distribution parameters of the equivalent circuit based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit.

The full wave extraction method of the distribution parameters of the differential heterogeneous interconnection through hole equivalent circuit provided by the embodiment of the invention obtains the three-dimensional model of the physical structure of the differential heterogeneous interconnection through hole and the equivalent circuit established based on the three-dimensional model, realizes the analysis of the differential heterogeneous interconnection through hole by using the equivalent circuit, the complexity of calculating the distribution parameters of the equivalent circuit can be reduced, a difference S parameter matrix of the three-dimensional model is calculated, the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit are calculated based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix, the distribution parameters of the equivalent circuit are calculated based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit, and the complexity of analyzing the differential heterogeneous interconnection through holes can be reduced.

EXAMPLE III

Referring to fig. 2, an equivalent circuit in the second embodiment of the present invention includes: the first equivalent resistor R1, the second equivalent resistor R2, the first equivalent loop self-inductance L1, the second equivalent loop self-inductance L2 and the first equivalent loop mutual inductance L_m1Mutual inductance L of second equivalent loop_m2A first equivalent conductance G1, a second equivalent conductance G2, an equivalent mutual conductance G_mA first equivalent capacitor C1, a second equivalent capacitor C2 and an equivalent mutual capacitor C_mThe first equivalent loop self-inductance L1 and the first equivalent loop mutual inductance L_m1The difference is the first equivalent inductance L-L_mThe second equivalent loop self-inductance L2 and the second equivalent loop mutual inductance L_m2The difference is the second equivalent inductance L2-L_m2One end of the first equivalent conductance G1 is connected to one end of the first equivalent capacitor C1 and then connected to ground, and the other end of the first equivalent conductance G1 is connected to the other end of the first equivalent capacitor C1 and then connected to one end of the first equivalent resistor R1 and the equivalent mutual conductance G_mAnd the equivalent mutual capacitance C_mIs connected to the positive terminal of the signal source, and the equivalent mutual conductance G_mAnd the other end of (C) and the equivalent mutual capacitance C_mAfter being connected, the other end of the first equivalent resistor R1 is respectively connected with one end of the second equivalent resistor R2, one end of the second equivalent capacitor C2 and one end of the second equivalent conductance G2 and is connected to the negative end of a signal source, the other end of the second equivalent capacitor C2 is connected with the other end of the second equivalent conductance G2 and is connected to the power ground, and the other end of the first equivalent resistor R1 is connected with the first equivalent inductance L1-L_m1Is connected to the second equivalent inductor L1-L_m1The other end of the second equivalent resistor R2 and the second equivalent inductor L2-L_m2Is connected to the second equivalent inductor L2-L_m2The other end of the second switch is connected with the negative end of the signal output end.

Example four

As an optional embodiment of the present invention, the step of calculating the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant, and the even mode propagation constant of the equivalent circuit based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix includes:

calculating differential mode characteristic impedance, common mode characteristic impedance, odd mode propagation constant and even mode propagation constant of the equivalent circuit by using a preset first parameter calculation formula based on the differential mode scattering parameter matrix and the common mode scattering parameter matrix;

wherein, the first parameter calculation formula is:

wherein Z is_diff0Representing the characteristic impedance of the differential mode, Z_comm0Representing the characteristic impedance of the common mode, beta representing the propagation constant of the odd mode, beta_eDenotes the even mode propagation constant, Δ_diff＝S_d1d1S_d2d2-S_d1d2S_d2d1，Δ_comm＝S_c1c1S_c2c2-S_c1c2S_c2c1，Z₀50 omega, the differential mode scattering parameter matrix isThe common mode scattering parametric matrix is:

EXAMPLE five

As an optional embodiment of the present invention, the step of calculating the distribution parameter of the equivalent circuit based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant, and the even mode propagation constant of the equivalent circuit includes:

calculating distribution parameters of the equivalent circuit by using a second parameter calculation formula based on the differential mode characteristic impedance, the common mode characteristic impedance, the odd mode propagation constant and the even mode propagation constant of the equivalent circuit;

wherein, the distribution parameters include: a value of the first equivalent resistance R1, a value of the second equivalent resistance R2, a value of the first equivalent loop self inductance L1, a value of the second equivalent loop self inductance L2, a value of the first equivalent loop mutual inductance L_m1Value of (1), second equivalent loop mutual inductance L_m2The value of the first equivalent conductance G1, the value of the second equivalent conductance G2, the equivalent mutual conductance G_mA value of the first equivalent capacitance C1, a value of the second equivalent capacitance C2, and an equivalent mutual capacitance C_mA value of (d);

the second parameter calculation formula is as follows:

G_i＝2Re(β_e/Z_comm)_i

G_m＝Re(β_o/Z_diff)₁-Re(β_e/Z_comm)₁＝Re(β_o/Z_diff)₂-Re(β_e/Z_comm)₂

C_i＝2Im(β_e/Z_comm)_i/ω

C_m＝(Im(β_o/Z_diff)₁-Im(β_e/Z_comm)₁)/ω＝(Im(β_o/Z_diff)₂-Im(β_e/Z_comm)₂)/ω

gi, wherein the value of i is 1 and 2, the value of Ri equivalent resistance, Lmi represents the value of equivalent inductance, Gi represents the value of equivalent conductance, Ci represents the value of equivalent capacitance, G_mRepresenting the value of the equivalent mutual conductance, G_mRepresenting the value of equivalent mutual capacitance, Re () representing the real part of the expression in brackets, Im () representing the imaginary part of the expression in brackets, omega being the operating angular frequency of the differential heterogeneous interconnection via, j being the imaginary unit.

(β_oZ_diff)₁＝2(R₁+jω(L₁-L_m1))

(β_oZ_diff)₂＝2(R₂+jω(L₂-L_m2))

(β_eZ_comm)₁＝2(R₁+jω(L₁+L_m1))

(β_eZ_comm)₂＝2(R₂+jω(L₂+L_m2))

(β_o/Z_diff)₁＝(G₁+jωC₁)/2+(G_m+jωC_m)

(β_o/Z_diff)₂＝(G₂+jωC₂)/2+(G_m+jωC_m)

(β_e/Z_comm)₁＝(G₁+jωC₁)/2

(β_e/Z_comm)₂＝(G₂+jωC₂)/2

It can be understood that the separation of the real part and the imaginary part results in the distribution parameters of the differential heterogeneous interconnection via.

The full-wave extraction method for the distribution parameters of the differential heterogeneous interconnection through hole equivalent circuit still has applicability to different through hole sizes and different frequency bands, and has the advantages of high precision, fast operation and the like.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.