阅读说明：本技术 一种基于虚拟现实的半导体离子注入技术教育培训和考核方法 (Semiconductor ion implantation technology education training and assessment method based on virtual reality ) 是由 吴方岩 于 2021-07-25 设计创作，主要内容包括：一种基于虚拟现实的半导体离子注入技术教育培训和考核方法,集教育与考核于一体,不仅将离子注入工艺完整的展现给学员,更通过沉浸式体验的方式,在短时间内掌握半导体离子注入加工工艺,节约了成本,避免了不必要的麻烦与危险,弥补实践教学条件的不足,通过设备工艺模块了解基本的离子注入设备及工艺流程,通过操作技能培训模块,掌握基本的离子注入操作技能,最终通过考核模块给出系统评分、存档及相关操作失误点。本发明所述的基于虚拟现实的半导体离子注入技术教育培训和考核方法,通过VR技术构建半导体离子注入加工过程的虚拟场景,克服空间、设备、环境以及原材料供应等各个方面的制约,扩大半导体工艺人员的培训规模和效。(A semiconductor ion implantation technology education training and assessment method based on virtual reality integrates education and assessment, not only shows an ion implantation process to students completely, but also masters a semiconductor ion implantation processing process in a short time through an immersion type experience mode, saves cost, avoids unnecessary troubles and dangers, makes up for the defects of practice teaching conditions, learns basic ion implantation equipment and process flows through an equipment process module, masters basic ion implantation operation skills through an operation skill training module, and finally gives system scoring, archiving and related operation error points through an assessment module. The semiconductor ion implantation technology education training and assessment method based on the virtual reality constructs a virtual scene of a semiconductor ion implantation processing process through a VR technology, overcomes the restrictions of various aspects such as space, equipment, environment, raw material supply and the like, and enlarges the training scale and the training effect of semiconductor process personnel.)

1. A semiconductor ion implantation technology education training and assessment method based on virtual reality is characterized in that: the method comprises the following steps:

step 1: starting a host system, connecting a server side of the host system with a client side, wherein the client side is responsible for displaying and interacting virtual scenes, and trainees log in the host system through own accounts and passwords;

step 2: the client side leads in corresponding ion implantation process virtual training courseware from the server side according to the authority of the trainee, displays an ion implantation process principle training item, an ion implantation process operation skill training item and an assessment item on a display interface of a host system, the trainee selects the current item to be trained according to the self authority, if the training item is the ion implantation process principle training item, the step 3 is carried out, if the training item is the ion implantation process operation training item, the step 6 is carried out, and if the training item is the assessment item, the step 9 is carried out;

and step 3: an ion implantation process principle training unit is generated on a display interface, trainees select ion implantation process principle training contents and inform a host system, and the host system completes connection between hardware and software and scheduling of resources;

and 4, step 4: the host system calls out virtual teaching aids in a virtual scene, deeply and delicately explains the currently learned technological principle of the trainee in a mode of combining characters, voice and animation, sets corresponding problems in the explanation process, examines the learning condition of the trainee in a selection and judgment mode, transmits corresponding data to a server, judges whether the trainee masters the learned knowledge or not, and enters the learning of the next knowledge point if the answer is correct; otherwise, entering step 5; if all the knowledge points of a process principle are completely learned, returning to the step 3; if the trained personnel finish learning all the process principles in the plan, returning to the step 2 to enter the learning of the next project;

and 5: the system prompts that the answer is wrong, the virtual assistant teaching is combined with characters, voice or animation to explain the mistake and the serious consequence to the trainee in detail, the corresponding knowledge point is reviewed, and then the learning of the next knowledge point is continued;

step 6: the display interface displays an ion implantation process operation training project, trainees select the operation training project required to be carried out currently, and a host system is informed to complete various preparation works;

and 7: the host system generates a process selected by the trainee in a virtual scene to demonstrate animation, guides the trainee to finish each step of operation, and explains key operation actions in detail when the trainee operates by virtual teaching aids;

and 8: transmitting interactive action data generated by the trainee to a server, judging whether the trainee takes correct operation, if so, entering the next step, otherwise, entering step 9; if all the steps of operating the training project are finished, returning to the step 6; if all the operation training projects are finished, returning to the step 2 to enter the learning of the next project;

and step 9: the system prompts an operation error, and then simulates and demonstrates correct virtual actions corresponding to the irregular behaviors to the trainee, so as to guide the trainee to finish the operation correctly and enter the learning of the next operation;

step 10: generating an examination content list on a display interface, selecting examination content by trainees, and generating a corresponding virtual scene by a host system according to the selection of the trainees;

step 11: the trainees act in the virtual scene according to the examination requirements and transmit the acquired interactive data to the server side in real time; judging whether the trained personnel adopt correct operation in real time according to the interactive data, if not, entering step 12, otherwise, entering step 13;

step 12: the host system prompts a behavior error, finishes the examination and enters a step 13;

step 13: recording the examination progress of the trained personnel, storing all operation records, and pushing the examination result to related departments.

2. The virtual reality-based semiconductor ion implantation technology educational training and assessment method according to claim 1, wherein: in the step 3, the hardware is a VR server, a client and a teaching field video unit, wherein the client comprises at least any one of a CAVE system containing VR/AR technology, a VR head display and AR glasses; the software comprises an internet data unit, a login unit, an image and audio processing unit, an intelligent explanation unit and an examination evaluation unit, wherein the intelligent explanation module is connected with the courseware module through a network connection module, and the practical training personnel enters the examination module after learning the courseware module; the host system is the master console in the hardware.

3. The virtual reality-based semiconductor ion implantation technology educational training and assessment method according to claim 1, wherein: the ion implantation process operation training program and the examination content comprise ion implantation principles, the most common dopant in silicon technology, ion implantation source gaseous source and solid source, and the temperature of ion implantation doping diffusion.

4. The virtual reality-based semiconductor ion implantation technology educational training and assessment method according to claim 3, wherein: the ion implantation principle is as follows: the ion is an ionized atom or molecule, also called as plasma, with agreed electric charge, the plasma generator is applied in the processes of CVD, metal ion implantation, dry etching, photoresist removal, etc., in the ion implantation doping, after the ion with high energy is implanted into the solid target surface, the high energy particles will collide with the atoms and electrons of the solid target surface for many times, the collisions will weaken the energy of the particles gradually, and finally the movement is stopped due to the energy disappearance, forming the agreed impurity distribution.

5. The virtual reality-based semiconductor ion implantation technology educational training and assessment method according to claim 3, wherein: the temperature of the ion implantation doping diffusion is set to be 600 degrees.

6. The virtual reality-based semiconductor ion implantation technology educational training and assessment method according to claim 1, wherein: the judgment criteria of the operation in the step 11 are as follows:

(1): whether the trained personnel operate according to the operation flow which is already standardized in the whole flow or not;

(2): whether the relevant operation meets the correct operation method set by the system or not, and if not, corresponding serious results are caused.

7. The virtual reality-based semiconductor ion implantation technology educational training and assessment method according to claim 1, wherein: the interactive data real-time judgment operation standard in the step 11 is as follows:

firstly, the method comprises the following steps: judging the front and back sequence of the trainee in the virtual space operation through the interactive data;

II, secondly: recording related data input by the trainee through interactive data;

thirdly, the method comprises the following steps: and (4) comparing the standard flow with the standard flow in the built-in assessment resources of the courseware according to the principle in the step (3).

Technical Field

The invention belongs to the technical field of semiconductor processing education, and particularly relates to a semiconductor ion implantation technology education training and assessment method based on virtual reality.

Background

The complete preparation process of the semiconductor device is a complex systematic engineering chip with huge and complex production equipment, strict requirements on process environment and extremely high standards for the supply of production raw materials, reagents and high-purity special gases. At present, China seriously depends on chips imported from abroad, and although the domestic semiconductor industry is gradually breaking the foreign technology blockade, the international advanced level still has a small gap.

With the rapid development of the semiconductor industry, the requirements for doping process precision, large-area uniformity, small lateral diffusion and the like are improved, so that the semiconductor ion implantation process becomes the first choice of the circuit doping process.

Ion implantation processes are also disadvantageous in that the equipment is expensive and complex, training and maintenance are more time consuming than the corresponding diffusion, and the equipment presents new risks in the use of high voltages and more toxic gases.

Disclosure of Invention

The purpose of the invention is as follows: in view of the problems and deficiencies in the prior art, the invention aims to provide a semiconductor ion implantation technology education training and assessment method based on virtual reality, which carries out technology education training and completes assessment in a virtual scene through the virtual reality technology, completely avoids high equipment cost in actual training and safety risks in training, and enables students to rapidly learn the semiconductor ion implantation processing technology in a short time.

The technical scheme is as follows: the invention provides a semiconductor ion implantation technology education training and assessment method based on virtual reality, which comprises the following steps:

step 1: starting a host system, connecting a server side of the host system with a client side, wherein the client side is responsible for displaying and interacting virtual scenes, and trainees log in the host system through own accounts and passwords;

step 2: the client side leads in corresponding ion implantation process virtual training courseware from the server side according to the authority of the trainee, displays an ion implantation process principle training item, an ion implantation process operation skill training item and an assessment item on a display interface of a host system, the trainee selects the current item to be trained according to the self authority, if the training item is the ion implantation process principle training item, the step 3 is carried out, if the training item is the ion implantation process operation training item, the step 6 is carried out, and if the training item is the assessment item, the step 9 is carried out;

and step 3: an ion implantation process principle training unit is generated on a display interface, trainees select ion implantation process principle training contents and inform a host system, and the host system completes connection between hardware and software and scheduling of resources;

and 4, step 4: the host system calls out virtual teaching aids in a virtual scene, deeply and delicately explains the currently learned technological principle of the trainee in a mode of combining characters, voice and animation, sets corresponding problems in the explanation process, examines the learning condition of the trainee in a selection and judgment mode, transmits corresponding data to a server, judges whether the trainee masters the learned knowledge or not, and enters the learning of the next knowledge point if the answer is correct; otherwise, entering step 5; if all the knowledge points of a process principle are completely learned, returning to the step 3; if the trained personnel finish learning all the process principles in the plan, returning to the step 2 to enter the learning of the next project;

and 5: the system prompts that the answer is wrong, the virtual assistant teaching is combined with characters, voice or animation to explain the mistake and the serious consequence to the trainee in detail, the corresponding knowledge point is reviewed, and then the learning of the next knowledge point is continued;

step 6: the display interface displays an ion implantation process operation training project, trainees select the operation training project required to be carried out currently, and a host system is informed to complete various preparation works;

and 7: the host system generates a process selected by the trainee in a virtual scene to demonstrate animation, guides the trainee to finish each step of operation, and explains key operation actions in detail when the trainee operates by virtual teaching aids;

and 8: transmitting interactive action data generated by the trainee to a server, judging whether the trainee takes correct operation, if so, entering the next step, otherwise, entering step 9; if all the steps of operating the training project are finished, returning to the step 6; if all the operation training projects are finished, returning to the step 2 to enter the learning of the next project;

and step 9: the system prompts an operation error, and then simulates and demonstrates correct virtual actions corresponding to the irregular behaviors to the trainee, so as to guide the trainee to finish the operation correctly and enter the learning of the next operation;

step 10: generating an examination content list on a display interface, selecting examination content by trainees, and generating a corresponding virtual scene by a host system according to the selection of the trainees;

step 11: the trainees act in the virtual scene according to the examination requirements and transmit the acquired interactive data to the server side in real time; judging whether the trained personnel adopt correct operation in real time according to the interactive data, if not, entering step 12, otherwise, entering step 13;

step 12: the host system prompts a behavior error, finishes the examination and enters a step 13;

step 13: recording the examination progress of the trained personnel, storing all operation records, and pushing the examination result to related departments.

Further, in the above semiconductor ion implantation technology education training and assessment method based on virtual reality, in step 3, the hardware is a VR server, a client and a teaching field video unit, wherein the client includes at least one of a CAVE system including VR/AR technology, a VR head display and AR glasses; the software comprises an internet data unit, a login unit, an image and audio processing unit, an intelligent explanation unit and an examination evaluation unit, wherein the intelligent explanation module is connected with the courseware module through a network connection module, and the practical training personnel enters the examination module after learning the courseware module; the host system is the master console in the hardware.

Further, the training items and the examination contents of the operation of the ion implantation technology comprise ion implantation principles, the most common dopant in silicon technology, the gaseous source and the solid source of the ion implantation source and the temperature of the ion implantation doping diffusion.

Further, the semiconductor ion implantation technology education training and assessment method based on the virtual reality comprises the following steps: the ion is an ionized atom or molecule, also called as plasma, with agreed electric charge, the plasma generator is applied in the processes of CVD, metal ion implantation, dry etching, photoresist removal, etc., in the ion implantation doping, after the ion with high energy is implanted into the solid target surface, the high energy particles will collide with the atoms and electrons of the solid target surface for many times, the collisions will weaken the energy of the particles gradually, and finally the movement is stopped due to the energy disappearance, forming the agreed impurity distribution.

Further, in the above teaching and assessment method for virtual reality-based semiconductor ion implantation technology, the temperature of the ion implantation doping diffusion is set to 600 °.

Further, in the above method for education training and assessment of semiconductor ion implantation technology based on virtual reality, the judgment criteria of the operation in step 11 are as follows:

(1): whether the trained personnel operate according to the operation flow which is already standardized in the whole flow or not;

(2): whether the relevant operation meets the correct operation method set by the system or not, and if not, corresponding serious results are caused.

Further, in the above semiconductor ion implantation technology education training and assessment method based on virtual reality, the interactive data in step 11 judges the operation standard in real time:

(1): judging the front and back sequence of the trainee in the virtual space operation through the interactive data;

(2): recording related data input by the trainee through interactive data;

(3): and (4) comparing the standard flow with the standard flow in the built-in assessment resources of the courseware according to the principle in the step (3).

The technical scheme shows that the invention has the following beneficial effects: the semiconductor ion implantation technology education training and assessment method based on the virtual reality learns basic ion implantation equipment and process flow through the equipment process module, masters basic ion implantation operation skills through the operation skill training module, and finally gives system scoring, archiving and related operation error points through the assessment module. Compared with the existing teaching and training, the virtual scene of the semiconductor ion implantation processing process is constructed by the VR technology, the restrictions of various aspects such as space, equipment, environment, raw material supply and the like are overcome, the training scale and efficiency of semiconductor process personnel are enlarged, and the method has high popularization value.

Drawings

Fig. 1 is a frame diagram of the semiconductor ion implantation technology education training and assessment method based on virtual reality.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.

Examples

The virtual reality-based semiconductor ion implantation technology education training and assessment method as shown in FIG. 1 comprises the following steps:

step 1: starting a host system, connecting a server side of the host system with a client side, wherein the client side is responsible for displaying and interacting virtual scenes, and trainees log in the host system through own accounts and passwords;

step 2: the client side leads in corresponding ion implantation process virtual training courseware from the server side according to the authority of the trainee, displays an ion implantation process principle training item, an ion implantation process operation skill training item and an assessment item on a display interface of a host system, the trainee selects the current item to be trained according to the self authority, if the training item is the ion implantation process principle training item, the step 3 is carried out, if the training item is the ion implantation process operation training item, the step 6 is carried out, and if the training item is the assessment item, the step 9 is carried out;

and step 3: an ion implantation process principle training unit is generated on a display interface, trainees select ion implantation process principle training contents and inform a host system, and the host system completes connection between hardware and software and scheduling of resources;

and 4, step 4: the host system calls out virtual teaching aids in a virtual scene, deeply and delicately explains the currently learned technological principle of the trainee in a mode of combining characters, voice and animation, sets corresponding problems in the explanation process, examines the learning condition of the trainee in a selection and judgment mode, transmits corresponding data to a server, judges whether the trainee masters the learned knowledge or not, and enters the learning of the next knowledge point if the answer is correct; otherwise, entering step 5; if all the knowledge points of a process principle are completely learned, returning to the step 3; if the trained personnel finish learning all the process principles in the plan, returning to the step 2 to enter the learning of the next project;

and 5: the system prompts that the answer is wrong, the virtual assistant teaching is combined with characters, voice or animation to explain the mistake and the serious consequence to the trainee in detail, the corresponding knowledge point is reviewed, and then the learning of the next knowledge point is continued;

step 6: the display interface displays an ion implantation process operation training project, trainees select the operation training project required to be carried out currently, and a host system is informed to complete various preparation works;

and 7: the host system generates a process selected by the trainee in a virtual scene to demonstrate animation, guides the trainee to finish each step of operation, and explains key operation actions in detail when the trainee operates by virtual teaching aids;

and 8: transmitting interactive action data generated by the trainee to a server, judging whether the trainee takes correct operation, if so, entering the next step, otherwise, entering step 9; if all the steps of operating the training project are finished, returning to the step 6; if all the operation training projects are finished, returning to the step 2 to enter the learning of the next project;

and step 9: the system prompts an operation error, and then simulates and demonstrates correct virtual actions corresponding to the irregular behaviors to the trainee, so as to guide the trainee to finish the operation correctly and enter the learning of the next operation;

step 10: generating an examination content list on a display interface, selecting examination content by trainees, and generating a corresponding virtual scene by a host system according to the selection of the trainees;

step 11: the trainees act in the virtual scene according to the examination requirements and transmit the acquired interactive data to the server side in real time; judging whether the trained personnel adopt correct operation in real time according to the interactive data, if not, entering step 12, otherwise, entering step 13;

step 12: the host system prompts a behavior error, finishes the examination and enters a step 13;

step 13: recording the examination progress of the trained personnel, storing all operation records, and pushing the examination result to related departments.

In the step 3, the hardware is a VR server, a client and a teaching field video unit, wherein the client comprises at least any one of a CAVE system containing VR/AR technology, a VR head display and AR glasses; the software comprises an internet data unit, a login unit, an image and audio processing unit, an intelligent explanation unit and an examination evaluation unit, wherein the intelligent explanation module is connected with the courseware module through a network connection module, and the practical training personnel enters the examination module after learning the courseware module; the host system is the master console in the hardware.

The ion implantation process operation training program and the examination content comprise ion implantation principles, the most common dopant in silicon technology, ion implantation source gaseous source and solid source, and the temperature of ion implantation doping diffusion.

The ion implantation principle is as follows: the ion is an ionized atom or molecule, also called as plasma, with agreed electric charge, the plasma generator is applied in the processes of CVD, metal ion implantation, dry etching, photoresist removal, etc., in the ion implantation doping, after the ion with high energy is implanted into the solid target surface, the high energy particles will collide with the atoms and electrons of the solid target surface for many times, the collisions will weaken the energy of the particles gradually, and finally the movement is stopped due to the energy disappearance, forming the agreed impurity distribution. The temperature of the ion implantation doping diffusion is set to be 600 degrees.

The judgment criteria of the operation in the step 11 are as follows: (1): whether the trained personnel operate according to the operation flow which is already standardized in the whole flow or not; (2): whether the relevant operation meets the correct operation method set by the system or not, and if not, corresponding serious results are caused.

The interactive data real-time judgment operation standard in the step 11 is as follows: (1): judging the front and back sequence of the trainee in the virtual space operation through the interactive data; (2): recording related data input by the trainee through interactive data; (3): and (4) comparing the standard flow with the standard flow in the built-in assessment resources of the courseware according to the principle in the step (3).

The ion implantation process is operated as follows:

(1) opening a vacuum gauge, a mechanical pump, an electromagnetic valve 1 and an electromagnetic valve 2;

(2) all switches behind the control cabinet are opened, the power supply of the molecular pump is turned on, and the electromagnetic valve is turned off;

(3) opening a power supply of the combined head → the range of the gas supply small flow N2 is 0-10 sccm (2.5sccm arc starting)/the large flow is 0-100 sccm (He 60sccm arc starting) → opening an arc voltage → adding a filament power supply current → leading-out voltage;

leading current → restraining voltage about 1000V, the smaller the restraining current is, the better, 0 is best, the accelerating power supply is turned on (10-100 KV, can be adjusted according to the parameter setting required by the experiment)

(4) Shutdown step

Closing the control cabinet: turning off the suppression power firstly → 10 seconds later, turning off the lead-out power → turning off the electric arc power → turning off the filament power → turning off the flow → turning off the head closing part;

turning off the vacuum gauge;

turning off the molecular pump: red Stop → off solenoid valve 2 → off mechanical pump → off main power supply → all switches on the back of the control cabinet are off.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that modifications can be made by those skilled in the art without departing from the principle of the present invention, and these modifications should also be construed as the protection scope of the present invention.