阅读说明：本技术 包括不连续互连区段的磁阻元件和包括多个磁阻元件的磁存储器 (Magnetoresistive element comprising discontinuous interconnection segments and magnetic memory comprising a plurality of magnetoresistive elements ) 是由 S·马丁 J·罗切 M·德鲁阿尔德 于 2021-03-17 设计创作，主要内容包括：包括不连续互连区段的磁阻元件和包括多个磁阻元件的磁存储器。本公开涉及一种用于制造磁阻元件的方法,该磁阻元件包括磁性隧道结MTJ,该磁性隧道结MTJ包括隧道势垒层、第一铁磁层和第二铁磁层；写入电流层；以及互连层,其被配置用于向写入电流层供应写入电流。在互连层中提供间隙,使得互连层包括沿着层平面延伸并串联连接写入电流层的两个不连续互连区段。该方法包括：沉积互连层(50)、写入电流层(30)、第二铁磁层(23)、隧道势垒层(22)和第一铁磁层(21)；在互连层(50)中形成间隙(34)；用间隙材料填充间隙；以及通过执行单个蚀刻步骤来形成支柱(40),直到达到充当停止层的互连层(50)。(Magnetoresistive elements including discontinuous interconnected segments and magnetic memories including a plurality of magnetoresistive elements. The present disclosure relates to a method for manufacturing a magnetoresistive element comprising a magnetic tunnel junction MTJ comprising a tunnel barrier layer, a first ferromagnetic layer and a second ferromagnetic layer; writing a current layer; and an interconnect layer configured to supply a write current to the write current layer. A gap is provided in the interconnect layer such that the interconnect layer includes two discontinuous interconnect segments extending along the layer plane and connecting the write current layer in series. The method comprises the following steps: depositing an interconnect layer (50), a write current layer (30), a second ferromagnetic layer (23), a tunnel barrier layer (22), and a first ferromagnetic layer (21); forming a gap (34) in the interconnect layer (50); filling the gap with a gap material; and forming the pillars (40) by performing a single etching step until reaching the interconnect layer (50) acting as a stop layer.)