阅读说明：本技术 逻辑电路
(Logic circuit
) 是由 大森铁男 于 2020-03-20 设计创作，主要内容包括：公开了一种逻辑电路。提供了能够在电源接通时抑制输出不期望的逻辑电平的信号的逻辑电路。逻辑电路(1)包括：反相器(10),其从输出端子(12)输出使被输入到输入端子(11)的信号的逻辑反转后的信号；第一晶体管(20P),其以维持截止状态的方式与输入端子(11)连接；以及第二晶体管(20N),其以维持截止状态的方式与输出端子(12)连接。(A logic circuit is disclosed. Provided is a logic circuit capable of suppressing output of a signal of an undesired logic level when power is turned on. The logic circuit (1) comprises: an inverter (10) that outputs, from an output terminal (12), a signal obtained by inverting the logic of a signal input to an input terminal (11); a first transistor (20P) connected to the input terminal (11) so as to maintain an off state; and a second transistor (20N) connected to the output terminal (12) so as to maintain an off state.)
1. A logic circuit, comprising:
an inverter that outputs, from an output terminal, a signal obtained by inverting the logic of a signal input to an input terminal;
a first transistor connected to the input terminal so as to maintain an off state; and
and a second transistor connected to the output terminal so as to maintain an off state.
2. The logic circuit of claim 1,
the first transistor is a P-channel MOSFET having a source and a gate connected to a power supply line and a drain connected to the input terminal,
the second transistor is an N-channel MOSFET having a source and a gate connected to a ground line and a drain connected to the output terminal.
3. The logic circuit of claim 1,
the first transistor is a P-channel MOSFET having a source and a gate connected to a power supply line and a drain connected to the input terminal,
the second transistor is a P-channel MOSFET having a source connected to the output terminal, a gate connected to a power supply line, and a drain connected to a ground line.
4. Logic circuit according to claim 2 or 3,
further comprising a third transistor connected to the input terminal,
the third transistor is a P-channel MOSFET having a source connected to a power supply line, a gate connected to the output terminal, and a drain connected to the input terminal.
5. The logic circuit of claim 1,
the first transistor is an N-channel MOSFET having a source and a gate connected to ground and a drain connected to the input terminal,
the second transistor is a P-channel MOSFET having a source and a gate connected to a power supply line and a drain connected to the output terminal.
6. The logic circuit of claim 5,
further comprising a third transistor connected to the input terminal,
the third transistor is an N-channel MOSFET having a source connected to a ground line, a gate connected to the output terminal, and a drain connected to the input terminal.
7. The logic circuit according to any one of claims 1 to 6,
the inverter includes:
a P-channel MOSFET having a source connected to a power supply line, a gate connected to the input terminal, and a drain connected to the output terminal; and
the N-channel MOSFET has a source connected to a ground, a gate connected to the input terminal, and a drain connected to the output terminal.
Technical Field
The present invention relates to a logic circuit.
Background
As a technique related to a logic circuit including a CMOS (complementary metal-oxide semiconductor) inverter, the following technique is known.
For example, patent document 1 describes a CMOS inverter circuit in which a first P-channel FET and an N-channel FET are connected in series and connected between a power supply and ground, a gate of the first P-channel FET and a gate of the N-channel FET are connected to an input terminal, and a connection point of the first P-channel FET and the N-channel FET is connected to an output terminal. The CMOS inverter circuit includes a switch control unit that connects a switching element and a second P-channel FET connected in series with the switching element in parallel with the first P-channel FET, and connects a gate of the second P-channel FET to an input terminal, monitors a voltage of a power supply, and turns on the switching element when the voltage becomes greater than a predetermined value.
Disclosure of Invention
Problems to be solved by the invention
In a CMOS inverter including an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) and a P-channel MOSFET, there is a case where an output is not fixed due to an indeterminate input of the CMOS inverter or an output logic is inverted during a transition period after a power supply is turned on and until a power supply voltage rises to a predetermined level. This causes a problem that a signal of an undesired logic level is output from the CMOS inverter and the system malfunctions.
The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a logic circuit capable of suppressing an output of an undesired logic level signal when a power supply is turned on.
Means for solving the problems
The logic circuit according to the present invention includes: an inverter that outputs, from an output terminal, a signal obtained by inverting the logic of a signal input to an input terminal; a first transistor connected to the input terminal so as to maintain an off state; and a second transistor connected to the output terminal so as to maintain an off state.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, a logic circuit capable of suppressing an output of an undesired logic level signal at the time of power-on is provided.
Drawings
Fig. 1 is a diagram showing an example of the configuration of a logic circuit according to a comparative example.
Fig. 2 is a diagram showing a configuration of a circuit block according to a comparative example.
Fig. 3A is a diagram showing an example of voltage waveforms at respective nodes when the power supply of the circuit block according to the comparative example is turned on.
Fig. 3B is a diagram showing an example of voltage waveforms at nodes of the circuit block according to the comparative example at the time of power-on.
Fig. 3C is a diagram showing an example of voltage waveforms at respective nodes when the power supply is turned on in the circuit block according to the comparative example.
Fig. 4A is a diagram showing an example of the configuration of a logic circuit according to a comparative example.
Fig. 4B is a diagram showing an example of the configuration of a logic circuit according to a comparative example.
Fig. 4C is a diagram showing an example of the configuration of the logic circuit according to the comparative example.
Fig. 5 is a diagram showing an example of the configuration of a logic circuit according to the embodiment of the present invention.
Fig. 6 is a diagram showing a configuration of a circuit block according to an embodiment of the present invention.
Fig. 7 is a diagram showing an example of voltage waveforms at nodes of the circuit block according to the embodiment of the present invention at the time of power-on.
Fig. 8 is a diagram showing a configuration of a circuit block according to another embodiment of the present invention.
Fig. 9 is a diagram showing a configuration of a circuit block according to another embodiment of the present invention.
Fig. 10 is a diagram showing an example of voltage waveforms at nodes of the circuit block according to the embodiment of the present invention at the time of power-on.
Fig. 11 is a diagram showing a configuration of a circuit block according to another embodiment of the present invention.
Fig. 12 is a diagram showing an example of a voltage waveform of each node at the time of power-on of the circuit block according to the embodiment of the present invention.
Fig. 13 is a diagram showing a configuration of a circuit block according to another embodiment of the present invention.
Fig. 14 is a diagram showing an example of a voltage waveform of each node at the time of power-on of the circuit block according to the embodiment of the present invention.
Detailed Description
First, before explaining a logic circuit according to an embodiment of the present invention, a logic circuit according to a comparative example will be explained.
Fig. 1 is a diagram showing an example of the configuration of a logic circuit 1X1 according to a comparative example. The logic circuit 1X1 according to the comparative example is a logic circuit constituting a general CMOS inverter, and includes a P-channel MOSFET 10P connected to a power supply line and an N-channel MOSFET10N connected to a ground line. The gate of MOSFET 10P and the gate of MOSFET10N are connected to input terminal 11, and the drain of MOSFET 10P and the drain of MOSFET10N are connected to output terminal 12.
Fig. 2 is a diagram showing a configuration of a circuit block 100X including a logic circuit 1X1 according to a comparative example. The circuit block 100X includes a logic circuit 1X1, a logic circuit 1X0 provided at a front stage of the logic circuit 1X1, and a logic circuit 1X2 provided at a rear stage of the logic circuit 1X 1. That is, the circuit block 100X is configured by cascade-connecting logic circuits 1X0, 1X1, and 1X 2. The logic circuits 1X0 and 1X2 have the same structure as that of the logic circuit 1X1 shown in fig. 1.
When the power supply is turned on, the power supply voltage VDD rises to a predetermined level, and the potential of the input node IX of the circuit block 100X is not fixed (high impedance state) until the system input is determined. Here, Vtp is a gate threshold voltage Vth of a P-channel MOSFET (hereinafter, referred to as PMOS), and Ipk is a leakage current. A gate threshold voltage Vth of an N-channel MOSFET (hereinafter referred to as NMOS) is Vtn, and a leakage current is Ink.
Fig. 3A is a diagram showing an example of voltage waveforms of respective nodes at the time of power-on of circuit block 100X according to the comparative example, in a case where the first condition (| Vtp | ≈ Vtn | and Ipk ≈ Ink) is satisfied. When the first condition is satisfied, the potentials of the output node a1 of the logic circuit 1X0, the output node a2 of the logic circuit 1X1, and the output node OX of the logic circuit 1X2 are not fixed, respectively. In a region where the power supply voltage VDD is smaller than the gate threshold voltage Vth of the MOSFET (Vth ≦ VDD), the potentials of the nodes a1, a2, and OX are not fixed, respectively. Further, in the region where Vth ≦ VDD, the influence of the leakage current of the MOSFET is dominant. The state shown in fig. 3A is a state in which Ipk and Ink are balanced.
Fig. 3B is a diagram showing an example of voltage waveforms of the respective nodes at the time of power-on of the circuit block 100X according to the comparative example, in a case where the second condition (| Vtp | < | Vtn | and Ipk > Ink) is satisfied. When the second condition is satisfied, the operation is dependent on the PMOS. In this case, in the region where Vth is equal to or less than VDD, PMOS characteristics are exhibited, and NMOS hardly operates. The potential of the output node OX of the logic circuit 1X2 rises to a high level due to the leakage current of the PMOS. When the level of the power supply voltage VDD becomes high, the NMOS characteristic starts to appear (that is, the NMOS starts to operate), and the potential of the output node OX is inverted to a low level. That is, when the second condition is satisfied, the potential of the output node OX is inverted from the high level to the low level in the transition period after the power-on in accordance with the states of the logic circuits 1X0 and 1X 1.
Fig. 3C is a diagram showing an example of voltage waveforms of the respective nodes at the time of power-on of the circuit block 100X according to the comparative example, in a case where the third condition (| Vtp | > | Vtn | and Ipk < Ink) is satisfied. When the third condition is satisfied, the operation is dependent on NMOS. In this case, in the region where Vth is equal to or less than VDD, the characteristics of NMOS are exhibited, and PMOS hardly operates. The potential of the output node OX of the logic circuit 1X2 falls to a low level due to the leakage current of the NMOS. When the level of the power supply voltage VDD becomes high, PMOS characteristics start to appear (that is, PMOS starts to operate), and the potential of the node OX inverts to a high level. That is, when the third condition is satisfied, the potential of the output node OX is inverted from the low level to the high level in the transition period after the power-on in accordance with the states of the logic circuits 1X0 and 1X 1.
As described above, according to the circuit block 100X including the logic circuit 1X1 according to the comparative example, the potential of the output node OX is not fixed or inverted in the transient period after the power is turned on due to the characteristic variation of the MOSFET. This may cause an unexpected signal of logic level to be output, which may cause a system to malfunction. Although some improvement effect can be expected if the size ratio of PMOS to NMOS is adjusted, the above-described inadequacy may not be completely eliminated due to the characteristic variation of the MOSFET.
Fig. 4A, 4B, and 4C are diagrams illustrating an example of the configuration of a logic circuit according to a comparative example in which instability of an output node can be suppressed. The logic circuit 1X1 shown in fig. 4A has the resistance element 13 provided between the input terminal 11 and the ground line. The logic circuit 1X1 shown in fig. 4B has the resistance element 14 provided between the power supply line and the input terminal 11. The logic circuit 1X1 shown in fig. 4C has a DMOS (Double-diffused MOSFET)15 provided between the input terminal 11 and the ground. According to the logic circuit 1X1 shown in fig. 4A to 4C, while the potential of the output node is suppressed from being unstable when the power is turned on, current always flows through the resistance elements 13 and 14 and the DMOS 15, which causes a problem of an increase in power consumption.
Embodiments of the present invention will be described below with reference to the drawings. In the drawings, the same reference numerals are given to substantially the same or equivalent components or portions.
[ first embodiment ]
Fig. 5 is a diagram showing an example of the configuration of the logic circuit 1a1 according to the first embodiment of the present invention. The logic circuit 1a1 can be formed in a single semiconductor chip. The logic circuit 1a1 includes an inverter 10, and the inverter 10 outputs a signal obtained by inverting the logic of a signal input to the input terminal 11 from the output terminal 12. The inverter 10 has a P-channel MOSFET 10P and an N-channel MOSFET 10N. MOSFET 10P has a source connected to a power supply line, a gate connected to input terminal 11, and a drain connected to output terminal 12. MOSFET10N has a source connected to ground, a gate connected to input terminal 11, and a drain connected to output terminal 12.
The logic circuit 1a1 further includes a P-channel MOSFET 20P connected to the input terminal 11 so as to maintain an off state, and an N-channel MOSFET20N connected to the output terminal 12 so as to maintain an off state.
The MOSFET 20P has a source and a gate connected to a power supply line, and a drain connected to the input terminal 11. The MOSFET 20P is connected to the power supply line via the source and gate, and maintains an off state. The MOSFET20N has a source and a gate connected to ground, and a drain connected to the output terminal 12. The MOSFET20N is connected to the ground line through the source and the gate, and maintains an off state.
Fig. 6 is a diagram showing a configuration of a circuit block 100A including the logic circuit 1a1 according to the present embodiment. The circuit block 100A can be formed on a single semiconductor chip. The circuit block 100A includes a logic circuit 1a1, a logic circuit 1a0 provided at a front stage of the logic circuit 1a1, and a logic circuit 1a2 provided at a rear stage of the logic circuit 1a 1. That is, the circuit block 100A is configured by cascade-connecting the logic circuits 1a0, 1a1, and 1a 2. The logic circuits 1a0 and 1a2 have the same configuration as the logic circuit 1X1 according to the comparative example shown in fig. 1.
Fig. 7 is a diagram showing an example of a voltage waveform of each node of the circuit block 100A at the time of power-on. In a region where the power supply voltage VDD is smaller than the gate threshold voltage Vth of the MOSFET (Vth ≦ VDD), that is, a region where the circuit does not operate normally, the influence of the leakage current of the MOSFET is dominant. In this region, the potential of the input terminal 11 is fixed to a high level by the leakage current of the MOSFET 20P connected to the input terminal 11 of the logic circuit 1a 1. Further, the potential of the output terminal 12 is fixed to the low level by the leakage current of the MOSFET20N connected to the output terminal 12 of the logic circuit 1a 1. Thereby, the potential of the output node OX of the logic circuit 1a2 of the subsequent stage is fixed to the high level.
According to the circuit block 100A including the logic circuit 1a1 according to the present embodiment, even when the above-described first condition (| Vtp | ≈ Vtn | and Ipk ≈ Ink) is satisfied, the potential of the output node OX is not fixed, and even when the above-described second condition (| Vtp | < | Vtn | and Ipk > Ink) or third condition (| Vtp | > | Vtn | and Ipk < Ink) is satisfied, the potential of the output node OX is not inverted. That is, it is possible to suppress the output of an undesired signal of a logic level when the power is turned on. Therefore, the risk of occurrence of malfunction of the system at the time of power-on can be suppressed. Further, since the MOSFETs 20P and 20N are always kept in the off state, an increase in power consumption can be suppressed. Further, the MOSFETs 20P and 20N do not affect the circuit operation.
[ second embodiment ]
Fig. 8 is a diagram showing an example of the configuration of the logic circuit 1a1 according to the second embodiment of the present invention. The logic circuit 1a1 includes an inverter 10, and the inverter 10 outputs a signal obtained by inverting the logic of a signal input to the input terminal 11 from the output terminal 12. The inverter 10 has a P-channel MOSFET 10P and an N-channel MOSFET 10N. MOSFET 10P has a source connected to a power supply line, a gate connected to input terminal 11, and a drain connected to output terminal 12. MOSFET10N has a source connected to ground, a gate connected to input terminal 11, and a drain connected to output terminal 12.
The logic circuit 1a1 further includes a P-channel MOSFET 20P connected to the input terminal 11 so as to maintain an off state, and a P-channel MOSFET21P connected to the output terminal 12 so as to maintain an off state.
The MOSFET 20P has a source and a gate connected to a power supply line, and a drain connected to the input terminal 11. The MOSFET 20P is connected to a power supply line via a source and a gate, and maintains an off state. The MOSFET21P has a source connected to the output terminal 12, a gate connected to a power supply line, and a drain connected to a ground line. The MOSFET21P is connected to the power supply line through the gate, and maintains an off state.
In the circuit block 100A (see fig. 6) including the logic circuit 1a1 according to the present embodiment, similarly to the circuit block 100A according to the first embodiment, in the region where Vth is equal to or less than VDD, the potential of the input terminal 11 is fixed to a high level by the leakage current of the MOSFET 20P connected to the input terminal 11 of the logic circuit 1a 1. Further, the potential of the output terminal 12 is fixed to the low level by the leakage current of the MOSFET21P connected to the output terminal 12 of the logic circuit 1a 1. Thereby, the potential of the output node OX of the logic circuit 1a2 of the subsequent stage is fixed to the high level.
According to the circuit block 100A including the logic circuit 1a1 according to the present embodiment, even when the above-described first condition (| Vtp | ≈ Vtn | and Ipk ≈ Ink) is satisfied, the potential of the output node OX is not fixed, and even when the above-described second condition (| Vtp | < | Vtn | and Ipk > Ink) or third condition (| Vtp | > | Vtn | and Ipk < Ink) is satisfied, the potential of the output node OX is not inverted. That is, it is possible to suppress the output of an undesired signal of a logic level when the power is turned on. Therefore, the risk of occurrence of malfunction of the system at the time of power-on can be suppressed. Further, since the MOSFETs 20P and 21P are always kept in the off state, an increase in power consumption can be suppressed. Further, the MOSFETs 20P and 21P do not affect the circuit operation.
[ third embodiment ]
Fig. 9 is a diagram showing an example of the configuration of the logic circuit 1a1 according to the third embodiment of the present invention. The logic circuit 1a1 includes an inverter 10, and the inverter 10 outputs a signal obtained by inverting the logic of a signal input to the input terminal 11 from the output terminal 12. The inverter 10 has a P-channel MOSFET 10P and an N-channel MOSFET 10N. MOSFET 10P has a source connected to a power supply line, a gate connected to input terminal 11, and a drain connected to output terminal 12. MOSFET10N has a source connected to ground, a gate connected to input terminal 11, and a drain connected to output terminal 12.
The logic circuit 1a1 further includes: a P-channel MOSFET 20P connected to the input terminal 11 so as to maintain an off state; a P-channel MOSFET 22P connected to the input terminal 11 and configured to latch the inverter 10 when the power is turned on; and an N-channel MOSFET20N connected to the output terminal 12 so as to maintain an off state.
The MOSFET 20P has a source and a gate connected to a power supply line, and a drain connected to the input terminal 11. The MOSFET 20P is connected to a power supply line via a source and a gate, and maintains an off state. The MOSFET 22P has a source connected to a power supply line, a gate connected to the output terminal 12, and a drain connected to the input terminal 11. The MOSFET20N has a source and a gate connected to ground, and a drain connected to the output terminal 12. The MOSFET20N is connected to the ground line via the source and the gate, and maintains an off state.
Fig. 10 is a diagram showing an example of a voltage waveform at each node at the time of power supply on of the circuit block 100A (see fig. 6) including the logic circuit 1a1 according to the present embodiment. In a region where the power supply voltage VDD is smaller than the gate threshold voltage Vth of the MOSFET (Vth ≦ VDD), that is, a region where the circuit does not operate normally, the influence of the leakage current of the MOSFET is dominant. In this region, the potential of the input terminal 11 is fixed to a high level by the leakage current of the MOSFET 20P connected to the input terminal 11 of the logic circuit 1a 1. Further, the potential of the output terminal 12 is fixed to the low level due to the leakage current of the MOSFET20N connected to the output terminal 12 of the logic circuit 1a 1. The MOSFET 22P connected to the input terminal 11 of the logic circuit 1a1 is fixed to a low level by the potential of the output terminal 12, and maintains an on state. This realizes a latch operation for holding the state in which the potential of the input terminal 11 is at a high level and the potential of the output terminal 12 is at a low level. Thereby, the potential of the output node OX of the logic circuit 1a2 of the subsequent stage is fixed to the high level.
According to the circuit block 100A including the logic circuit 1a1 according to the present embodiment, even when the above-described first condition (| Vtp | ≈ Vtn | and Ipk ≈ Ink) is satisfied, the potential of the output node OX is not fixed, and even when the above-described second condition (| Vtp | < | Vtn | and Ipk > Ink) or third condition (| Vtp | > | Vtn | and Ipk < Ink) is satisfied, the potential of the output node OX is not inverted. That is, it is possible to suppress the output of an undesired signal of a logic level when the power is turned on. Therefore, the risk of occurrence of malfunction of the system at the time of power-on can be suppressed. Further, the MOSFETs 20P and 20N are always kept in the off state. The MOSFET 22P transitorily becomes the on state, but does not flow a stable current. Thus, an increase in power consumption can be suppressed. Further, the MOSFETs 20P, 22P, and 20N do not affect the circuit operation. Further, since the latch operation is realized by the MOSFET 22P, the stability of the operation at the time of power-on can be further improved.
The MOSFET 22P according to the present embodiment can also be connected to the input terminal 11 of the logic circuit 1a1 (see fig. 8) according to the second embodiment.
[ fourth embodiment ]
Fig. 11 is a diagram showing an example of the configuration of a logic circuit 1a1 according to a fourth embodiment of the present invention. The logic circuit 1a1 includes an inverter 10, and the inverter 10 outputs a signal obtained by inverting the logic of a signal input to the input terminal 11 from the output terminal 12. The inverter 10 has a P-channel MOSFET 10P and an N-channel MOSFET 10N. MOSFET 10P has a source connected to a power supply line, a gate connected to input terminal 11, and a drain connected to output terminal 12. MOSFET10N has a source connected to ground, a gate connected to input terminal 11, and a drain connected to output terminal 12.
The logic circuit 1a1 further includes: an N-channel MOSFET23N connected to the input terminal 11 so as to maintain an off state; and a P-channel MOSFET 23P connected to the output terminal 12 so as to maintain an off state.
The MOSFET23N has a source and a gate connected to ground, and a drain connected to the input terminal 11. The MOSFET23N is connected to the ground line via the source and the gate, and maintains an off state. The MOSFET 23P has a source and a gate connected to the power supply line, and a drain connected to the output terminal 12. The MOSFET 23P is connected to the power supply line via the source and the gate, and maintains an off state.
Fig. 12 is a diagram showing an example of a voltage waveform at each node at the time of power supply on of the circuit block 100A (see fig. 6) including the logic circuit 1a1 according to the present embodiment. In a region where the power supply voltage VDD is smaller than the gate threshold voltage Vth of the MOSFET (Vth ≦ VDD), that is, a region where the circuit does not operate normally, the influence of the leakage current of the MOSFET is dominant. In this region, the potential of the input terminal 11 is fixed to a low level due to the leakage current of the MOSFET23N connected to the input terminal 11 of the logic circuit 1a 1. Further, the potential of the output terminal 12 is fixed to a high level due to the leakage current of the MOSFET 23P connected to the output terminal 12 of the logic circuit 1a 1. Thereby, the potential of the output node OX of the logic circuit 1a2 of the subsequent stage is fixed to the low level.
According to the circuit block 100A including the logic circuit 1a1 according to the present embodiment, even when the above-described conditions (| Vtp | ≈ Vtn | and Ipk ≈ Ink) are satisfied, the potential of the output node OX is not fixed, and even when the above-described second condition (| Vtp | < | Vtn | and Ipk > Ink) or third condition (| Vtp | > | Vtn | and Ipk < Ink) is satisfied, the potential of the output node OX is not inverted. That is, it is possible to suppress the output of an undesired signal of a logic level when the power is turned on. Therefore, the risk of occurrence of malfunction of the system at the time of power-on can be suppressed. Further, since the MOSFETs 23P and 23N are always kept in the off state, an increase in power consumption can be suppressed. The MOSFETs 23P and 23N do not affect the circuit operation.
[ fifth embodiment ]
Fig. 13 is a diagram showing an example of the configuration of a logic circuit 1a1 according to a fifth embodiment of the present invention. The logic circuit 1a1 includes an inverter 10, and the inverter 10 outputs a signal obtained by inverting the logic of a signal input to the input terminal 11 from the output terminal 12. The inverter 10 has a P-channel MOSFET 10P and an N-channel MOSFET 10N. MOSFET 10P has a source connected to a power supply line, a gate connected to input terminal 11, and a drain connected to output terminal 12. MOSFET10N has a source connected to ground, a gate connected to input terminal 11, and a drain connected to output terminal 12.
The logic circuit 1a1 further includes: an N-channel MOSFET23N connected to the input terminal 11 so as to maintain an off state; an N-channel MOSFET 24N connected to the input terminal 11 and configured to latch the inverter 10 when the power is turned on; and a P-channel MOSFET 23P connected to the output terminal 12 so as to maintain an off state.
Fig. 14 is a diagram showing an example of a voltage waveform of each node of the circuit block 100A at the time of power-on. In a region where the power supply voltage VDD is smaller than the gate threshold voltage Vth of the MOSFET (Vth ≦ VDD), that is, a region where the circuit does not operate normally, the influence of the leakage current of the MOSFET is dominant. In this region, the potential of the input terminal 11 is fixed to a low level by the leakage current of the MOSFET23N connected to the input terminal 11 of the logic circuit 1a 1. Further, the potential of the output terminal 12 is fixed to a high level by the leakage current of the MOSFET 23P connected to the output terminal 12 of the logic circuit 1a 1. The MOSFET 24N connected to the input terminal 11 of the logic circuit 1A is fixed to a high level by the potential of the output terminal 12, and maintains an on state. This realizes a latch operation for holding the state in which the potential of the input terminal 11 is at a low level and the potential of the output terminal 12 is at a high level. Thereby, the potential of the output node OX of the logic circuit 1a2 of the subsequent stage is fixed to the low level.
According to the circuit block 100A including the logic circuit 1a1 according to the present embodiment, even when the above-described first condition (| Vtp | ≈ Vtn | and Ipk ≈ Ink) is satisfied, the potential of the output node OX is not fixed, and even when the above-described second condition (| Vtp | < | Vtn | and Ipk > Ink) or third condition (| Vtp | > | Vtn | and Ipk < Ink) is satisfied, the potential of the output node OX is not inverted. That is, it is possible to suppress the output of an undesired signal of a logic level when the power is turned on. Therefore, the risk of occurrence of malfunction of the system at the time of power-on can be suppressed. The MOSFETs 23P and 23N are always kept off. Although the MOSFET 24N transitorily becomes the on state, a stable current does not flow. Thus, an increase in power consumption can be suppressed. The MOSFETs 23N, 24N, and 23P do not affect the circuit operation. Further, since the latch operation is realized by the MOSFET 24N, the stability of the operation at the time of power-on can be further improved.
Description of the reference numerals
1a0, 1a1, 1a 2: a logic circuit; 10: an inverter; 10P, 10N: a MOSFET; 11: an input terminal; 12: an output terminal; 20P, 20N, 21P, 22P, 23N, 23P, 24N: a MOSFET; 100A: a circuit block.
