阅读说明：本技术 一种用于半导体镀膜设备的多通道控温装置 (Multi-channel temperature control device for semiconductor coating equipment ) 是由 李娟� 于 2020-07-13 设计创作，主要内容包括：本发明公开了一种用于半导体镀膜设备的多通道控温装置,温控领域,一种用于半导体镀膜设备的多通道控温装置,通过控温叠通道层和选择导热棒的设置,当需要升温时,导热气体从下向上运行,鼓气层会贴附在定多通道板上,此时鼓气层上的部分孔被封堵,导热气体进入到本控温装置上方与半导体接触的速度变慢,从而可以有效控制本控温装置整体的升温速度,使半导体不易因升温过快而导致薄膜失败,进而有效半导体镀膜的成功率,当需要降温时,导热气体向下运动,使鼓气层向下鼓起直至被选择导热棒刺破,导热气体直接与选择导热棒接触进行热量向下的传递,从而显著提高降温冷却的速度,降低降温所需时间,进而有效提高相同时间内半导体镀膜的效率。(The invention discloses a multi-channel temperature control device for semiconductor coating equipment, which belongs to the field of temperature control, and is characterized in that a multi-channel temperature control device for the semiconductor coating equipment is provided with a temperature control laminated channel layer and a selected heat conduction rod, when the temperature needs to be raised, heat conduction gas runs from bottom to top, an air blowing layer can be attached to a fixed multi-channel plate, partial holes on the air blowing layer are blocked, the speed of the heat conduction gas entering the upper part of the temperature control device and contacting with a semiconductor is reduced, so that the integral temperature raising speed of the temperature control device can be effectively controlled, the semiconductor is not easy to cause film failure due to over-high temperature raising, the success rate of semiconductor coating is further improved, when the temperature needs to be lowered, the heat conduction gas moves downwards, the air blowing layer is enabled to be bulged downwards until the selected heat conduction rod punctures, the heat conduction gas directly contacts with the selected heat conduction rod to transfer the heat downwards, and the cooling speed, the time required by cooling is reduced, and the efficiency of semiconductor coating in the same time is effectively improved.)

1. The utility model provides a multichannel temperature regulating device for semiconductor coating equipment, is including last heat conduction dish (11) and lower heat conduction dish (12) that match each other, go up heat conduction dish (11) and form medium dispersion chamber down between heat conduction dish (12), a plurality of evenly distributed's of heat conduction dish (12) lower extreme fixedly connected with ceramic stick (22) down, it has a plurality ofly and ceramic stick (22) assorted mounting hole (21) to cut in last heat conduction dish (11) inner, it has outer gas diffusion passageway (32) to go up heat conduction dish (11) lower extreme fixedly connected with, lower heat conduction dish (12) lower extreme fixedly connected with outer gas diffusion passageway (32) upper end assorted interior gas diffusion passageway (31), interior gas diffusion passageway (31) outer end is cut has a plurality of air vents, the air vent communicates with each other with medium dispersion chamber, its characterized in that: go up all excavate on heat conduction dish (11) and lower heat conduction dish (12) and have a plurality of scattered gas control by temperature change hole (4) that correspond each other, the inside fixedly connected with in scattered gas control by temperature change hole (4) on heat conduction dish (12) down bears frame (7), bear frame (7) upper end fixedly connected with and select heat conduction stick (6), go up gas control by temperature change hole (4) inside fixedly connected with accuse temperature laminated channel layer (5) that looses on heat conduction dish (11), accuse temperature laminated channel layer (5) with select heat conduction stick (6) contactless each other.

2. The multi-channel temperature control device for the semiconductor coating equipment according to claim 1, wherein: the bearing frame (7) is of a Y-shaped hard structure, the lengths of three Y-shaped edges are communicated, and the selective heat conducting rod (6) is connected to the connecting position of the three Y-shaped edges.

3. The multi-channel temperature control device for the semiconductor coating equipment according to claim 1, wherein: the temperature control laminated channel layer (5) comprises a fixed multi-channel plate (51) fixedly connected with the center of the inner wall of the air-diffusing temperature control hole (4) on the upper heat conducting disc (11) and an air blowing layer (52) fixedly attached below the fixed multi-channel plate (51), and the fixed multi-channel plate and the air blowing layer are of an integrated structure.

4. The multi-channel temperature control device for the semiconductor coating equipment according to claim 3, wherein: the multi-channel plate (51) is of a hard porous structure, and the air-blowing layer (52) is of a solid elastic structure.

5. The multi-channel temperature control device for the semiconductor coating equipment according to claim 1, wherein: the selective heat conducting rod (6) comprises a heat conducting rod (61) fixedly connected with the bearing frame (7), a heat conducting sheet (62) connected to the upper end of the heat conducting rod (61), and a plurality of embedded barbed rods (63) uniformly connected to the upper end of the heat conducting sheet (62).

6. The multi-channel temperature control device for the semiconductor coating equipment according to claim 5, wherein: the heat conducting sheet (62) is of a porous structure, and the heat conducting rod (61), the heat conducting sheet (62) and the embedded barbed rod (63) are all made of heat conducting structures.

7. The multi-channel temperature control device for the semiconductor coating equipment according to claim 6, wherein: the embedded barbed rod (63) comprises an embedded support rod (631) fixedly connected with the heat conducting sheet (62), a wrapping layer (632) wrapped at the end part of the embedded support rod (631), and a barbed head (633) connected to the upper end of the wrapping layer (632).

8. The multi-channel temperature control device for the semiconductor coating equipment according to claim 7, wherein: the surface of the wrapping layer (632) is of a round and smooth structure without edges and corners, and the stabbing head (633) is of a hard conical structure.

Technical Field

The invention relates to the field of temperature control, in particular to a multi-channel temperature control device for semiconductor coating equipment.

Background

Since the semiconductor device usually needs to heat or maintain the wafer and the chamber at the temperature required for the deposition reaction, the heating plate must have a heating structure to pre-heat the wafer. In order to solve the problem that the heating plate is too fast in temperature rise and slow in temperature reduction in the technical process, the temperature of the heating plate is controlled by a cooling temperature control system, and the temperature of the heating plate is guaranteed to be stable in the technical process. In order to better control the temperature of the semiconductor, the temperature of the semiconductor is required to be transmitted to the heating plate, and the temperature of the surface of the semiconductor is controlled by controlling the temperature of the heating plate. However, most of the semiconductor film deposition reactions are performed under vacuum conditions, the heat conduction under vacuum conditions is mainly radiation, the heat conduction efficiency is low, and heat can be accumulated on the surface of the semiconductor. In order to better transfer the heat of the semiconductor to the heating plate, a layer of heat-conducting medium needs to be introduced between the heating plate and the semiconductor, so that the heat exchange between the heating plate and the semiconductor can be carried out quickly, and the uniformity of the temperature of the semiconductor can be improved better.

The semiconductor film deposition equipment has the advantages that plasmas also participate in deposition reaction in the deposition process, and the temperature of the heating plate and the wafer can continuously rise along with the increase of radio frequency and process time due to the release of plasma energy and the release of energy of reaction among chemical gases; if the process is carried out at the same temperature, the process can be carried out only after the heating plate is cooled to the same temperature, which consumes a lot of time and has relatively low equipment capacity. If the temperature of the wafer and the heating plate increases too quickly, the temperature of the wafer and the heating plate may exceed the temperature to which the film is required to withstand, causing the film to fail.

Disclosure of Invention

1. Technical problem to be solved

Aiming at the problems in the prior art, the invention aims to provide a multi-channel temperature control device for semiconductor coating equipment, which is characterized in that through the arrangement of a temperature control laminated channel layer and a selected heat conducting rod, when the temperature needs to be raised, heat conducting gas runs from bottom to top, an air blowing layer can be attached to a fixed multi-channel plate, partial holes on the air blowing layer are blocked, the speed of the heat conducting gas entering the upper part of the temperature control device and contacting with a semiconductor is reduced, so that the overall temperature raising speed of the temperature control device can be effectively controlled, the semiconductor is not easy to cause film failure due to too high temperature rise, the success rate of semiconductor coating is further improved, when the temperature needs to be lowered, the heat conducting gas moves downwards, the air blowing layer is enabled to be bulged downwards until the selected heat conducting rod is punctured, the heat conducting gas directly contacts with the selected heat conducting rod to transfer downwards, and the cooling speed is remarkably improved, the time required by cooling is reduced, and the efficiency of semiconductor coating in the same time is effectively improved.

2. Technical scheme

In order to solve the above problems, the present invention adopts the following technical solutions.

A multi-channel temperature control device for semiconductor coating equipment comprises an upper heat conduction disc and a lower heat conduction disc which are matched with each other, a medium dispersion cavity is formed between the upper heat conduction disc and the lower heat conduction disc, the lower end of the lower heat conduction disc is fixedly connected with a plurality of ceramic rods which are uniformly distributed, a plurality of mounting holes which are matched with the ceramic rods are drilled at the inner end of the upper heat conduction disc, an outer air dispersion channel is fixedly connected at the lower end of the upper heat conduction disc, an inner air dispersion channel which is matched with the upper end of the outer air dispersion channel is fixedly connected at the lower end of the lower heat conduction disc, a plurality of vent holes are drilled at the outer end of the inner air dispersion channel and communicated with the medium dispersion cavity, a plurality of air dispersion temperature control holes which correspond to each other are drilled on the upper heat conduction disc and the lower heat conduction disc, a bearing frame is fixedly connected in the air dispersion temperature control holes on the lower heat conduction disc, and a selection heat conduction, the temperature control laminated channel layer is fixedly connected inside the gas diffusion temperature control holes on the upper heat conduction plate, the temperature control laminated channel layer is not contacted with the selective heat conduction rods, when the temperature needs to be raised, the heat conduction gas runs from bottom to top, the gas blowing layer can be attached to the multi-channel plate, at the moment, partial holes on the gas blowing layer are blocked, the speed of the heat conduction gas entering the upper part of the temperature control device and contacting with the semiconductor is reduced, so that the integral temperature raising speed of the temperature control device can be effectively controlled, the semiconductor is not easy to fail due to too high temperature raising, the success rate of semiconductor film coating is further improved, when the temperature needs to be lowered, the heat conduction gas moves downwards, the gas blowing layer is bulged downwards until the selected heat conduction rods puncture, the heat conduction gas is directly contacted with the selective heat conduction rods to transfer heat downwards, and the cooling speed is obviously improved, the time required by cooling is reduced, and the efficiency of semiconductor coating in the same time is effectively improved.

Furthermore, bear the frame for the stereoplasm structure of Y shape, and the trilateral length of Y shape communicates with each other, select the heat conduction stick to connect in the trilateral junction of Y shape, bear the frame and be used for bearing and select the heat conduction stick, its Y shape is difficult for again causing the influence to the permeability of the last scattered gas temperature control hole of heat conduction dish down simultaneously.

Furthermore, the temperature control laminated channel layer comprises a fixed multi-channel plate fixedly connected with the center of the inner wall of the gas dissipation temperature control hole on the upper heat conducting disc and a gas blowing layer fixedly attached below the fixed multi-channel plate, and the fixed multi-channel plate and the gas blowing layer are of an integral structure, when the temperature of the semiconductor above the temperature control device needs to be raised, the heat conducting gas runs from bottom to top, at the moment, the gas blowing layer can be attached to the fixed multi-channel plate under the action of gas, at the moment, partial holes on the gas blowing layer are blocked, the speed of the heat conducting gas entering the device to be contacted with the semiconductor is reduced, so that the integral temperature raising speed of the temperature control device can be effectively controlled, the semiconductor is effectively protected from film failure caused by too high temperature, the success rate of semiconductor film coating is further improved, when the temperature is required to be lowered, the heat conducting gas near the semiconductor moves downwards, and at the moment, make it swell downwards until with select the heat conduction stick contact and by selecting the heat conduction stick puncture, heat-conducting gas directly carries out the decurrent giving off of heat with selecting the heat conduction stick contact to showing the refrigerated speed of improvement cooling, reducing the required time of cooling, and then effectively improving the efficiency of semiconductor coating in the same time.

Furthermore, the fixed multi-channel plate is of a hard porous structure, so that the fixed multi-channel plate is not easy to deform under the action of heat-conducting gas, and the air-blowing layer is of a solid elastic structure and is convenient to deform under the action of the heat-conducting gas.

Further, the selective heat conducting rod comprises a heat conducting rod fixedly connected with the bearing frame, a heat conducting sheet connected to the upper end of the heat conducting rod and a plurality of embedded barbed rods uniformly connected to the upper end of the heat conducting sheet.

Further, the conducting strip is porous structure for cause the hindrance effect when embedded thorn stick is difficult for leading to the heat-conducting gas to advance the gas temperature control hole that looses on the heat conduction dish, and conducting rod, conducting strip and embedded thorn stick are heat conduction structure and make, make to select the heat-conducting rod to have good thermal diffusivity, compare in its heat conduction effect of gaseous faster, thereby be convenient for accelerate cooling's speed.

Further, embedded thorn stick includes with heat-conducting strip fixed connection's embedded vaulting pole, parcel layer and the thorn head of connecting in the parcel layer upper end of embedding vaulting pole tip including the parcel.

Furthermore, the surface of the wrapping layer is of a round and smooth structure without edges and corners, so that when the embedded prick rod loses the support of gas impact after being pricked into the air blowing layer, the air blowing layer is convenient to separate from the wrapping layer when recovering deformation, the prick head is of a hard conical structure and is convenient to prick the air blowing layer, and the embedded prick rod is extended to the air blowing layer and is positioned between the multiple channel plates.

3. Advantageous effects

Compared with the prior art, the invention has the advantages that:

(1) this scheme is through the setting of accuse temperature fold channel layer and selection heat conduction stick, when needs intensification, heat-conducting gas moves from bottom to top, the layer of blowing can be attached on deciding the multichannel board, the part hole on the layer of blowing this moment is by the shutoff, heat-conducting gas enters into the speed of this accuse temperature device top and semiconductor contact and becomes slow, thereby can the holistic programming rate of this temperature regulating device of effective control, make the semiconductor be difficult for because of the intensification is too fast leading to the film failure, and then the success rate of effective semiconductor coating film, when needs cooling, heat-conducting gas downstream, make the layer of blowing swell downwards until selected heat conduction stick punctures, heat-conducting gas directly carries out the decurrent transmission of heat with the contact of selection heat conduction stick, thereby show the refrigerated speed that improves, reduce the required time of cooling, and then effectively improve the efficiency of semiconductor coating film in the same time.

(2) The bearing frame is of a Y-shaped hard structure, the lengths of three sides of the Y shape are communicated, the heat conducting rod is selected to be connected to the connecting position of the three sides of the Y shape, the bearing frame is used for bearing the heat conducting rod, and meanwhile, the Y shape of the bearing frame is not easy to influence the permeability of the air dissipation temperature control hole on the lower heat conducting disc.

(3) The temperature control laminated channel layer comprises a fixed multi-channel plate fixedly connected with the center of the inner wall of a gas-diffusing temperature control hole on an upper heat conducting disc and an air blowing layer attached and fixed below the fixed multi-channel plate, and the fixed multi-channel plate and the air blowing layer are of an integral structure, when the temperature of a semiconductor above the temperature control device needs to be raised, heat conducting gas runs from bottom to top, at the moment, the air blowing layer can be attached to the fixed multi-channel plate under the action of gas, partial holes on the air blowing layer are blocked, the speed of the heat conducting gas entering the device to be contacted with the semiconductor is reduced, so that the integral temperature raising speed of the temperature control device can be effectively controlled, the semiconductor is effectively protected from film failure caused by excessively high temperature, the success rate of semiconductor film coating is further improved, when the temperature is required to be lowered, the heat conducting gas near the semiconductor moves downwards, and an impact effect is, make it swell downwards until with select the heat conduction stick contact and by selecting the heat conduction stick puncture, heat-conducting gas directly carries out the decurrent giving off of heat with selecting the heat conduction stick contact to showing the refrigerated speed of improvement cooling, reducing the required time of cooling, and then effectively improving the efficiency of semiconductor coating in the same time.

(4) The multi-channel plate is of a hard porous structure, so that the multi-channel plate is not easy to deform under the action of heat conducting gas, and the air blowing layer is of a solid elastic structure and is convenient to deform under the action of the heat conducting gas.

(5) The selective heat conducting rod comprises a heat conducting rod fixedly connected with the bearing frame, a heat conducting sheet connected to the upper end of the heat conducting rod and a plurality of embedded barbed rods uniformly connected to the upper end of the heat conducting sheet.

(6) The conducting strip is porous structure for cause the hindrance effect when embedded thorn stick is difficult for leading to heat-conducting gas to advance the gas temperature control hole that looses on the heat conduction dish, and conducting rod, conducting strip and embedded thorn stick are heat conduction structure and make, make to select the heat conduction stick to have good thermal diffusivity, compare in its heat conduction effect of gaseous faster, thereby be convenient for accelerate cooling's speed.

(7) The embedded pricking rod comprises an embedded support rod fixedly connected with the heat conducting sheet, a wrapping layer wrapping the end part of the embedded support rod and a pricking head connected to the upper end of the wrapping layer.

(8) The wrapping layer surface is the structure of mellow and non-edges and corners for when embedded thorn stick pricks and loses the support of gas impact in the air drum layer back, when the air drum layer resumes deformation, be convenient for its and the separation of wrapping layer, the thorn head is stereoplasm taper structure, is convenient for prick the air drum layer, thereby makes embedded thorn stick extend to the air drum layer and decide between the multichannel board.

Drawings

FIG. 1 is a schematic illustration of an explosive structure according to the present invention;

FIG. 2 is a schematic perspective view of the present invention;

FIG. 3 is a schematic structural diagram of the front side of the present invention;

FIG. 4 is a schematic view of a carrier of the present invention;

FIG. 5 is a schematic view of a selected heat conducting bar according to the present invention;

FIG. 6 is a schematic view of the construction of the embedded barbed rod of the present invention;

FIG. 7 is a schematic diagram of a temperature controlled stack channel layer according to the present invention when it is bulged;

fig. 8 is a schematic structural diagram of the temperature-controlled laminated channel layer according to the present invention under different temperature-raising and temperature-lowering conditions.

The reference numbers in the figures illustrate:

11 upper heat conducting discs, 12 lower heat conducting discs, 21 mounting holes, 22 ceramic rods, 31 inner gas dispersing channels, 32 outer gas dispersing channels, 4 gas dispersing temperature control holes, 5 temperature control laminated channel layers, 51 fixed multi-channel plates, 52 gas blowing layers, 6 selective heat conducting rods, 61 heat conducting rods, 62 heat conducting sheets, 63 embedded pricking rods, 631 embedded propping rods, 632 wrapping layers, 633 pricking heads and 7 bearing frames.

Detailed Description

The drawings in the embodiments of the invention will be combined; the technical scheme in the embodiment of the invention is clearly and completely described; obviously; the described embodiments are only some of the embodiments of the invention; but not all embodiments, are based on the embodiments of the invention; all other embodiments obtained by a person skilled in the art without making any inventive step; all fall within the scope of protection of the present invention.

In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.