阅读说明：本技术 控制表面形态的化学气相沉积层制备方法、装置及设备 (Method, device and equipment for preparing chemical vapor deposition layer with controlled surface morphology ) 是由 蔡坤峯 于 2020-08-27 设计创作，主要内容包括：本发明提供一种控制表面形态的化学气相沉积层制备方法、装置及设备,属于半导体技术领域。控制表面形态的化学气相沉积层制备方法,包括：获取并响应于反应开始指令,根据预设起始温度调节化学气相沉积炉的加热器温度至初始温度；根据初始温度以及反应的吸放热状态,调节化学气相沉积炉的加热器温度。本发明的目的在于提供一种控制表面形态的化学气相沉积层制备方法、装置及化学沉积反应设备,能够根据化学沉积反应的吸放热状态对加热器温度进行调节,从而提高炉内化学沉积形成的薄膜的厚度均匀性。(The invention provides a method, a device and equipment for preparing a chemical vapor deposition layer with a controlled surface morphology, and belongs to the technical field of semiconductors. The preparation method of the chemical vapor deposition layer with controlled surface morphology comprises the following steps: acquiring and responding to a reaction starting instruction, and adjusting the temperature of a heater of the chemical vapor deposition furnace to an initial temperature according to a preset initial temperature; and adjusting the temperature of a heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorbing and releasing state of the reaction. The invention aims to provide a preparation method and a device of a chemical vapor deposition layer with a controlled surface form and chemical deposition reaction equipment, which can adjust the temperature of a heater according to the heat absorption and release states of chemical deposition reaction, thereby improving the thickness uniformity of a film formed by chemical deposition in a furnace.)

1. A method for preparing a chemical vapor deposition layer with controlled surface morphology is characterized by comprising the following steps:

acquiring and responding to a reaction starting instruction, and adjusting the temperature of a heater of the chemical vapor deposition furnace to an initial temperature according to a preset initial temperature;

and adjusting the temperature of a heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorption and release state of the reaction.

2. The method of claim 1, wherein said adjusting a heater temperature of said chemical vapor deposition furnace based on said initial temperature and a state of heat absorption and release of a reaction comprises:

if the heat absorbing and releasing state is an exothermic reaction, adjusting the temperature of a heater of the chemical vapor deposition furnace in a time sequence descending manner according to the initial temperature;

and if the heat absorbing and releasing state is an endothermic reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a time sequence increasing mode according to the initial temperature.

3. The method of claim 1, wherein prior to said obtaining and in response to a reaction start command, adjusting a heater temperature of the chemical vapor deposition furnace to an initial temperature according to a preset start temperature, the method further comprises:

and acquiring the preset initial temperature corresponding to the target chemical deposition reaction and the heat absorption and release state.

4. The method of claim 2 or 3, wherein the initial temperature is higher than the predetermined starting temperature when the exothermic state is an endothermic reaction.

5. The method according to claim 2 or 3, wherein the exothermic state is an exothermic reaction, and the initial temperature is lower than the predetermined initial temperature.

6. The method of claim 2, wherein adjusting the heater temperature of the chemical vapor deposition furnace in a time-sequential descending manner based on the initial temperature comprises:

and regulating the temperature of a heater of the chemical vapor deposition furnace step by step in a descending manner at preset time intervals according to the initial temperature, wherein the preset time is the time interval between two adjacent times of regulating the temperature of the heater.

7. The method of claim 2, wherein incrementally adjusting the heater temperature of the chemical vapor deposition furnace in time series based on the initial temperature comprises:

and gradually and incrementally adjusting the temperature of the heater of the chemical vapor deposition furnace at preset time intervals according to the initial temperature, wherein the preset time is the time interval between two adjacent times of adjusting the temperature of the heater.

8. A device for preparing chemical vapor deposition layer with controlled surface morphology is characterized by comprising:

the response module is used for acquiring and responding to a reaction starting instruction and adjusting the temperature of a heater of the chemical vapor deposition furnace to an initial temperature according to a preset initial temperature;

and the adjusting module is used for adjusting the temperature of the heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorbing and releasing state of the reaction.

9. The apparatus according to claim 8, wherein the adjusting module is configured to adjust the heater temperature of the cvd furnace in a time-sequential descending manner according to the initial temperature if the exothermic state is an exothermic reaction; and if the heat absorbing and releasing state is an endothermic reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a time sequence increasing mode according to the initial temperature.

10. A chemical deposition reaction apparatus, comprising a chemical vapor deposition furnace, and a controller communicatively connected to a heater of the chemical vapor deposition furnace, the controller being configured to perform the method of preparing a chemical vapor deposition layer with controlled surface morphology according to any one of claims 1 to 7.

Technical Field

The invention relates to the technical field of semiconductors, in particular to a method, a device and equipment for preparing a chemical vapor deposition layer with a controlled surface morphology.

Background

Chemical Vapor Deposition (CVD) is a thin film Deposition technique that uses a Chemical reaction to generate a solid product from a reaction gas in a reactor and deposit the solid product on a surface of a substrate. The chemical vapor deposition process can be divided into three different deposition modes, i.e., Atmospheric Pressure (AP), Low Pressure (LP), and Plasma Enhanced (PE). In addition, the structure of the chemical vapor deposition reaction apparatus (chemical vapor deposition furnace) can be classified into a Horizontal Type (including a furnace tube Type), a Vertical Type (Vertical Type), a Barrel Type (Barrel Type), a Tubular Type (Tubular Type), a baking tray Type (Pancake Type), a Continuous Type (Continuous Type), and the like according to different preparation processes.

Generally, a chemical vapor deposition furnace is set to a fixed reaction temperature according to process requirements when performing a chemical vapor deposition process. Therefore, the thin film deposited in the current chemical vapor deposition furnace is prone to have uneven thickness, which affects the final product yield.

Disclosure of Invention

The invention aims to provide a preparation method and a device of a chemical vapor deposition layer with a controlled surface morphology and chemical deposition reaction equipment, which can adjust the temperature of a heater according to the heat absorption and release states of chemical deposition reaction, thereby improving the thickness uniformity of the deposition layer formed by chemical deposition in a furnace and enabling the surface of the deposition layer to be flat.

The embodiment of the invention is realized by the following steps:

in one aspect of the embodiments of the present invention, a method for preparing a chemical vapor deposition layer with controlled surface morphology is provided, including:

acquiring and responding to a reaction starting instruction, and adjusting the temperature of a heater of the chemical vapor deposition furnace to an initial temperature according to a preset initial temperature;

and adjusting the temperature of a heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorbing and releasing state of the reaction.

Optionally, adjusting the temperature of the heater of the cvd furnace according to the initial temperature and the heat absorption and release state of the reaction comprises:

if the heat absorbing and releasing state is an exothermic reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a descending manner along the time sequence according to the initial temperature;

and if the heat absorbing and releasing state is an endothermic reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a time sequence increasing mode according to the initial temperature.

Optionally, before the obtaining and responding to the reaction start instruction, the method further includes:

and acquiring a preset initial temperature corresponding to the target chemical deposition reaction and a heat absorption and release state.

Optionally, the heat absorption and release state is an endothermic reaction, and the initial temperature is higher than the preset initial temperature.

Alternatively, the heat absorption and release state is an exothermic reaction, and the initial temperature is lower than the preset initial temperature.

Optionally, adjusting the temperature of the heater of the cvd furnace in a time-sequential descending manner according to the initial temperature comprises:

and regulating the temperature of the heater of the chemical vapor deposition furnace step by step in a descending manner at preset time intervals according to the initial temperature, wherein the preset time is the time interval between two adjacent times of regulating the temperature of the heater.

Optionally, the adjusting the temperature of the heater of the chemical vapor deposition furnace in time-sequential increments according to the initial temperature comprises:

and gradually adjusting the temperature of the heater of the chemical vapor deposition furnace at preset time intervals according to the initial temperature, wherein the preset time is the time interval between two adjacent times of adjusting the temperature of the heater.

In another aspect of the embodiments of the present invention, there is provided a chemical vapor deposition layer manufacturing apparatus for controlling a surface morphology, including:

the response module is used for acquiring and responding to a reaction starting instruction and adjusting the temperature of a heater of the chemical vapor deposition furnace to an initial temperature according to a preset initial temperature;

and the adjusting module is used for adjusting the temperature of the heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorbing and releasing state of the reaction.

Optionally, the adjusting module is specifically configured to, if the heat absorption and release state is an exothermic reaction, adjust the temperature of the heater of the chemical vapor deposition furnace in a time sequence descending manner according to the initial temperature; and if the heat absorbing and releasing state is an endothermic reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a time sequence increasing mode according to the initial temperature.

In another aspect of the embodiments of the present invention, a chemical deposition reaction apparatus is provided, which includes a chemical vapor deposition furnace, and a controller in communication with a heater of the chemical vapor deposition furnace, wherein the controller is configured to perform any one of the above methods for preparing a chemical vapor deposition layer with controlled surface morphology.

The embodiment of the invention has the beneficial effects that:

according to the preparation method of the chemical vapor deposition layer with the controlled surface morphology, provided by the embodiment of the invention, the reaction starting instruction can be obtained and responded, and the temperature of the heater of the chemical vapor deposition furnace can be adjusted to the initial temperature according to the preset initial temperature. And then adjusting the temperature of a heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorption and release state of the reaction. According to the method, after the chemical vapor deposition reaction is started, the heater is controlled according to the heat absorption and release state corresponding to the chemical vapor deposition reaction, so that the reaction temperature in the chemical vapor deposition furnace is adjusted, the wafer can be heated more uniformly in the chemical vapor deposition furnace, the reaction temperature can be kept relatively stable and is not easily influenced by the reaction process, and the uniformity of the thickness of the film deposited on the surface of the wafer is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

FIG. 1 is a schematic flow chart of a method for preparing a chemical vapor deposition layer with controlled surface morphology according to an embodiment of the present invention;

FIG. 2 is a second schematic flow chart of a method for preparing a chemical vapor deposition layer with controlled surface morphology according to an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of an apparatus for forming a chemical vapor deposition layer with controlled surface morphology according to an embodiment of the present invention;

FIG. 4 is a second schematic structural diagram of an apparatus for preparing a chemical vapor deposition layer with controlled surface morphology according to an embodiment of the present invention;

fig. 5 is a third schematic structural view of an apparatus for preparing a chemical vapor deposition layer with a controlled surface morphology according to an embodiment of the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

An embodiment of the present invention provides a method for preparing a chemical vapor deposition layer with controlled surface morphology, as shown in fig. 1, the method may include:

s101: and acquiring and responding to a reaction starting instruction, and adjusting the temperature of a heater of the chemical vapor deposition furnace to an initial temperature according to a preset initial temperature.

S102: and adjusting the temperature of a heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorbing and releasing state of the reaction.

Wherein the preset starting temperature is the temperature required by the normal reaction of the corresponding chemical vapor deposition reaction. Accordingly, the initial temperature may be equal to the preset initial temperature, or may be a temperature value within a preset interval including the preset initial temperature, which is not limited herein.

In practical applications, a substrate (e.g., a wafer) to be subjected to thin film deposition may be placed in the cvd furnace after the temperature in the cvd furnace reaches an initial temperature. It may be placed in the cvd furnace before responding to the reaction start command, which is not limited herein.

In the method, the temperature of the heater of the chemical vapor deposition furnace is adjusted according to the initial temperature and the heat absorption and release state of the reaction, the temperature of the heater can be adjusted in real time from the initial temperature according to the heat absorption and release state of the reaction so as to keep the temperature in the chemical vapor deposition furnace stable all the time, and certainly, the temperature of the heater can be adjusted step by step without limitation.

The reaction start command to be responded in the method may be a switch command input by a user, and the like, and the method is not limited herein as long as the command indicates the start of the chemical vapor deposition reaction.

The method for preparing the chemical vapor deposition layer with the controlled surface morphology, provided by the embodiment of the invention, can firstly obtain and respond to a reaction starting instruction, and adjust the temperature of the heater of the chemical vapor deposition furnace to the initial temperature according to the preset initial temperature. And then adjusting the temperature of a heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorption and release state of the reaction. According to the method, after the chemical vapor deposition reaction is started, the heater is controlled according to the heat absorption and release state corresponding to the chemical vapor deposition reaction so as to adjust the reaction temperature in the chemical vapor deposition furnace, so that a substrate (such as a wafer and the like) can be heated more uniformly in the chemical vapor deposition furnace, the reaction temperature can be kept relatively stable and is not easily influenced by the reaction process, and the uniformity of the thickness of a film deposited on the surface of the wafer is improved.

Illustratively, adjusting the temperature of the heater of the cvd furnace according to the initial temperature and the heat absorption and release state of the reaction, as shown in fig. 2, may include:

s201: if the heat absorbing and releasing state is an heat releasing reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a descending manner along the time sequence according to the initial temperature.

S202: and if the heat absorbing and releasing state is an endothermic reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a time sequence increasing mode according to the initial temperature.

And correspondingly, the temperature of the heater is adjusted in a descending or ascending way along the time sequence according to the determined heat absorbing and releasing state of the chemical vapor deposition reaction. The chemical vapor deposition reaction can be started from the initial temperature to carry out the reaction, and the temperature in the furnace is reduced by decreasing the temperature of the heater along with the progress of the reaction due to the release of heat by the exothermic reaction or reduced by increasing the temperature of the heater according to the absorption of heat by the endothermic reaction. Therefore, the temperature in the chemical vapor deposition furnace can be kept relatively stable, so that the film can be stably and well generated on the substrate, and the thickness unevenness caused by the unstable temperature in the chemical vapor deposition furnace can be avoided.

For example, when the chemical vapor deposition reaction for preparing the deposition layer is an exothermic reaction, the temperature of the heater is gradually decreased and adjusted, so that the temperature of the reaction end section can be close to the temperature of the reaction initial section (namely, the temperature difference is small), the thickness of the central area of the deposition layer formed by the reaction initial section can be close to the thickness of the edge area of the deposition layer formed by the reaction end section, and the uneven condition that the deposition layer is in a concave structure due to the fact that the deposition thickness is too thick due to the fact that the temperature of the reaction end section is high is avoided.

For another example, when the cvd reaction for preparing the deposition layer is an endothermic reaction, the temperature of the heater is adjusted in an increasing manner so that the temperature of the reaction end section can be close to the temperature of the reaction initial section (i.e., the temperature difference is small), and thus the thickness of the central area of the deposition layer formed at the reaction initial section can be close to the thickness of the edge area of the deposition layer formed at the reaction end section, thereby avoiding the uneven condition that the deposition layer is in a convex structure due to the excessively thin deposition thickness caused by the low temperature of the reaction end section.

Optionally, before the obtaining and responding to the reaction start instruction, the method further includes:

and acquiring a preset initial temperature corresponding to the target chemical deposition reaction and a heat absorption and release state.

The preset starting temperature and the heat absorption and release state corresponding to the target chemical deposition reaction may be related parameters input by a user according to a chemical deposition reaction to be performed before a reaction start instruction is input by the user. Of course, it is also possible that the user presets one of the preset starting temperature and the heat absorption and release state (selected by the user before inputting the reaction start instruction) corresponding to different chemical deposition reactions according to the commonly used chemical deposition reactions, and the invention is not limited herein.

By this step, the method can be adapted to different chemical vapor deposition reactions according to the requirements for use, so as to improve the wide applicability of the method.

It should be noted that, in practical applications, the preset starting temperature and the heat absorption and release state may also be a set of parameters preset by a user in advance according to a specific reaction (for example, when the method is used for forming only a specific kind of thin film, the corresponding chemical vapor deposition reaction).

Optionally, the heat absorption and release state is an endothermic reaction, and the initial temperature is higher than the preset initial temperature.

The thickness of the film deposited on the edge of the substrate is thicker at the end stage of the chemical vapor deposition reaction because the heat released by the exothermic reaction is not easy to dissipate from the chemical vapor deposition furnace. Therefore, by setting the initial temperature to be higher than the preset initial temperature, the thickness of the film deposited at the center of the substrate can be increased correspondingly at the initial stage of the chemical vapor deposition reaction, thereby further improving the consistency of the thickness of the film deposited at the center and the edge of the substrate.

Alternatively, the heat absorption and release state is an exothermic reaction, and the initial temperature is lower than the preset initial temperature.

Because the heat absorbed by the endothermic reaction is not easily and rapidly supplemented into the chemical vapor deposition furnace by the heater, the film deposited at the edge of the substrate is thinner at the end stage of the chemical vapor deposition reaction. Therefore, by setting the initial temperature to be lower than the preset initial temperature, the thickness of the film deposited at the center of the substrate can be reduced correspondingly at the initial stage of the chemical vapor deposition reaction, thereby further improving the consistency of the thickness of the film deposited at the center and the edge of the substrate.

Optionally, adjusting the temperature of the heater of the cvd furnace in a time-sequential descending manner according to the initial temperature comprises:

and regulating the temperature of a heater of the chemical vapor deposition furnace step by step in a descending manner at preset time intervals according to the initial temperature.

The preset time length is the interval time length of the temperature of the two adjacent adjusting heaters.

In practical applications, the preset duration may be set to a fixed value, or gradually increased or decreased along the time sequence, which is not limited herein.

The temperature of the heater is adjusted step by step according to the preset time interval, so that the temperature of the heater in the chemical vapor deposition furnace can be better changed within the preset time interval, and the condition that the temperature adjusting effect in the furnace is poor due to the fact that the temperature is adjusted too fast is avoided. Of course, in other embodiments of the present invention, the heater temperature may also be continuously adjusted, and is not limited herein.

Optionally, the adjusting the temperature of the heater of the chemical vapor deposition furnace in time-sequential increments according to the initial temperature comprises:

and gradually adjusting the temperature of a heater of the chemical vapor deposition furnace in a step-by-step increasing mode at preset time intervals according to the initial temperature.

The preset time length is the interval time length of the temperature of the two adjacent adjusting heaters.

In practical applications, the preset duration may be set to a fixed value, or gradually increased or decreased along the time sequence, which is not limited herein.

The temperature of the heater is adjusted step by step according to the preset time interval, so that the temperature of the heater in the chemical vapor deposition furnace can be better changed within the preset time interval, and the condition that the temperature adjusting effect in the furnace is poor due to the fact that the temperature is adjusted too fast is avoided. Of course, in other embodiments of the present invention, the heater temperature may also be continuously adjusted, and is not limited herein.

In another aspect of the embodiments of the present invention, there is provided an apparatus for preparing a chemical vapor deposition layer with controlled surface morphology, as shown in fig. 3, including:

the response module 31 is configured to obtain and respond to a reaction start instruction, and adjust a heater temperature of the chemical vapor deposition furnace to an initial temperature according to a preset initial temperature;

and the adjusting module 32 is used for adjusting the temperature of the heater of the chemical vapor deposition furnace according to the initial temperature and the heat absorbing and releasing state of the reaction.

The device for preparing the chemical vapor deposition layer with the controlled surface morphology, provided by the embodiment of the invention, can be used for firstly obtaining and responding to a reaction starting instruction through the response module and adjusting the temperature of the heater of the chemical vapor deposition furnace to the initial temperature according to the preset initial temperature. And then adjusting the temperature of a heater of the chemical vapor deposition furnace through an adjusting module according to the initial temperature and the heat absorbing and releasing state of the reaction. The device, through after beginning to carry out the chemical vapor deposition reaction, according to the inhaling exothermic state that the chemical vapor deposition reaction corresponds, control the heater to adjust the reaction temperature in the chemical vapor deposition furnace, thereby make the wafer can be by more even heating in the chemical vapor deposition furnace, and make reaction temperature can keep relatively stable, be difficult for receiving the influence of reaction process, thereby improve the homogeneity of the thickness of the deposited film on wafer surface.

Optionally, the adjusting module 32 is specifically configured to, if the heat absorption and release state is an heat release reaction, adjust the heater temperature of the chemical vapor deposition furnace in a time-sequential descending manner according to the initial temperature; and if the heat absorbing and releasing state is an endothermic reaction, the temperature of a heater of the chemical vapor deposition furnace is adjusted in a time sequence increasing mode according to the initial temperature.

Optionally, as shown in fig. 4, the apparatus further includes an obtaining module 33, configured to obtain a preset starting temperature corresponding to the target chemical deposition reaction and a heat absorption and release state.

Alternatively, as shown in fig. 5, the adjusting module 32 may include:

the first sub-module 321 is configured to gradually adjust the heater temperature of the cvd furnace in a stepwise manner at preset time intervals according to the initial temperature.

Optionally, as shown in fig. 5, the adjusting module 32 may further include:

and a second sub-module 322 for adjusting the heater temperature of the cvd furnace gradually and progressively at preset time intervals according to the initial temperature.

It can be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working process of the apparatus described above may refer to the corresponding process of the method in the foregoing method embodiment, and is not described in detail herein.

In another aspect of the embodiments of the present invention, a chemical deposition reaction apparatus is provided, which includes a chemical vapor deposition furnace, and a controller in communication with a heater of the chemical vapor deposition furnace, wherein the controller is configured to perform any one of the above methods for preparing a chemical vapor deposition layer with controlled surface morphology.

The controller may be a processor of a computer or a server, or a control circuit board, etc., and is not limited herein.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.