阅读说明：本技术 晶棒生长设备及生长方法 (Crystal bar growth equipment and growth method ) 是由 赵旭良 于 2020-07-07 设计创作，主要内容包括：本发明提供一种晶棒生长设备及生长方法。晶棒生长设备包括生长炉、坩埚、加热器、提拉机构、红外探测仪、分度盘、传感器及控制装置；坩埚位于生长炉内；提拉机构包括提拉线及驱动装置,提拉线一端与晶棒的上部相连接,另一端与驱动装置相连接,晶棒的下部伸入坩埚内,晶棒上具有多根沿纵向延伸的晶线；红外探测仪位于生长炉的外侧；分度盘位于生长炉的上方,且与提拉机构相连接,以在提拉机构的带动下和晶棒同步旋转,分度盘的等分线的正投影位于相邻两根晶线之间；传感器位于分度盘的外围；控制装置与红外探测仪及传感器相连接,用于在传感器检测到分度盘的等分线时控制红外探测仪测量晶棒的直径。本发明有助于提高晶棒品质,提高生产良率。(The invention provides a crystal bar growing device and a growing method. The crystal bar growth equipment comprises a growth furnace, a crucible, a heater, a lifting mechanism, an infrared detector, an index plate, a sensor and a control device; the crucible is positioned in the growth furnace; the pulling mechanism comprises a pulling wire and a driving device, one end of the pulling wire is connected with the upper part of the crystal bar, the other end of the pulling wire is connected with the driving device, the lower part of the crystal bar extends into the crucible, and a plurality of crystal wires extending along the longitudinal direction are arranged on the crystal bar; the infrared detector is positioned at the outer side of the growth furnace; the dividing plate is positioned above the growth furnace and connected with the lifting mechanism so as to synchronously rotate with the crystal bar under the driving of the lifting mechanism, and the orthographic projection of the bisector of the dividing plate is positioned between two adjacent crystal lines; the sensor is positioned at the periphery of the dividing plate; and the control device is connected with the infrared detector and the sensor and is used for controlling the infrared detector to measure the diameter of the crystal bar when the sensor detects the bisector of the dividing plate. The invention is beneficial to improving the quality of the crystal bar and improving the production yield.)

1. An apparatus for growing a crystal ingot, comprising:

the growth furnace is provided with a detection window at the upper part;

the crucible is positioned in the growth furnace and used for placing raw materials for crystal bar growth;

the heater is positioned in the growth furnace, positioned at the periphery of the crucible and used for heating the raw materials in the crucible in the growth process of the crystal bar;

the pulling mechanism comprises a pulling wire and a driving device, one end of the pulling wire is connected with the upper part of the crystal bar, the other end of the pulling wire is connected with the driving device, the lower part of the crystal bar extends into the crucible, and the crystal bar is provided with a plurality of crystal wires extending along the longitudinal direction of the crystal bar;

the infrared detector is positioned outside the growth furnace, and a detection signal of the infrared detector reaches the surface of the crystal bar through the detection window so as to measure the diameter of the crystal bar;

the dividing plate is positioned above the growth furnace and connected with the lifting mechanism so as to synchronously rotate with the crystal bars under the driving of the lifting mechanism, and the orthographic projection of the bisector of the dividing plate is positioned between two adjacent crystal lines of the crystal bars;

the sensor is positioned on the periphery of the dividing disc and has a distance with the dividing disc, and the sensor is used for detecting the bisector of the dividing disc;

and the control device is connected with the infrared detector and the sensor and is used for controlling the infrared detector to measure the diameter of the crystal bar when the sensor detects the bisector of the dividing plate.

2. The apparatus of claim 1, wherein: the four crystal lines of the crystal bar are uniformly distributed at intervals in the circumferential direction of the crystal bar, and the dividing disc is a quartering dividing disc.

3. The apparatus of claim 1, wherein: and the distance from any point on the bisector of the dividing plate to the two adjacent crystal lines is equal.

4. The apparatus of claim 1, wherein: the control device comprises a storage unit, and data measured by the infrared detector is stored in the control device.

5. The apparatus of claim 1, wherein: the crystal bar growing equipment also comprises a heat shield device which is positioned in the growing furnace, positioned at the periphery of the crystal bar and extends towards the inner wall direction of the growing furnace.

6. The apparatus of claim 1, wherein: the control device comprises one or more of a computer, an MCU and a PLC.

7. The apparatus of claim 1, wherein: the orthographic projection of the dividing plate covers the crystal bar.

8. The apparatus of claim 1, wherein: the sensor includes one or both of a touch sensor and a photosensor.

9. The apparatus according to any one of claims 1 to 8, wherein: the axis line of the crystal bar is coincided with the center line of the dividing plate.

10. A crystal bar growing method is characterized in that: the ingot production method is performed based on the ingot growth apparatus according to any one of claims 1 to 9.

Technical Field

The invention belongs to the technical field of crystal bar growth, and particularly relates to crystal bar growth equipment and a crystal bar growth method.

Background

The CZ method (Czochralski, Czochralski method) is a common method for growing ingots, and generally comprises several stages, i.e. charging and melting, welding, necking, shouldering, isodiametric growth and ending. Specifically, raw materials such as silicon blocks and the like are put into a crucible and heated to be completely melted, and meanwhile, the flow rate, the pressure, the position of the crucible, the crystal rotation and the crucible rotation of gas are adjusted according to the process requirements; and after the melt is stabilized, lowering the seed crystal to a distance of 3-5 mm from the liquid level to preheat the grain crystal, then lowering the seed crystal to the surface of the melt, fully contacting the seed crystal and the melt, inserting the seed crystal into the melt to draw a fine trap, after the step of drawing the fine neck is finished, amplifying the diameter to a target diameter, when the fine neck grows to a sufficient length and reaches a certain drawing rate, reducing the drawing rate to shoulder and turn the shoulder, and then entering an equal-diameter growth stage until the end is finished to finish the whole production process. In the process, the growth diameter of the crystal bar needs to be strictly monitored to ensure that the finally grown crystal bar meets the production requirements. In the prior art, there are various methods for diameter detection during the growth of the ingot, and one of them is called as IRcon detection method, which has the basic principle of converting the diameter of the ingot into a diameter of the ingot by sensing different temperature changes through infrared temperature measurement. The method is a single-point measurement method, is very convenient to measure, and has the biggest defect that the method is easily influenced by a crystal line outside the crystal bar and the deflection amount of the crystal bar during rotation. When the IRcon probe irradiates the crystal line, the actually detected data will generate a large deviation, and because a certain amount of shaking cannot be avoided when the crystal bar rotates, and meanwhile, the IRcon probe cannot dynamically capture the irradiation point, the actually detected data will generate a large deviation under the condition, so that the produced crystal bar cannot meet the required specification requirement, and huge economic loss is caused.

Disclosure of Invention

In view of the above drawbacks of the prior art, an object of the present invention is to provide an apparatus and a method for growing a crystal rod, which are used to solve the problems that in the process of monitoring the growth diameter of the crystal rod by using an IRcon detection method, the IRcon probe cannot dynamically capture an irradiation point because the probe is easily in contact with an external crystal line and/or the crystal rod may shake a certain amount during rotation, so that the detected data has a large error with the actual diameter of the crystal rod, and the produced crystal rod does not meet the requirements, thereby causing huge economic loss, and the like.

In order to achieve the above objects and other related objects, the present invention provides an apparatus for growing a crystal ingot, comprising a growth furnace, a crucible, a heater, a pulling mechanism, an infrared detector, an index plate, a sensor and a control device; a detection window is arranged at the upper part of the growth furnace; the crucible is positioned in the growth furnace and is used for placing raw materials for crystal bar growth; the heater is positioned in the growth furnace and at the periphery of the crucible and is used for heating the raw materials in the crucible in the growth process of the crystal bar; the pulling mechanism comprises a pulling wire and a driving device, one end of the pulling wire is connected with the upper part of the crystal bar, the other end of the pulling wire is connected with the driving device, the lower part of the crystal bar extends into the crucible, and the crystal bar is provided with a plurality of crystal wires extending along the longitudinal direction of the crystal bar; the infrared detector is positioned at the periphery of the growth furnace, and a detection signal of the infrared detector reaches the surface of the crystal bar through the detection window so as to measure the diameter of the crystal bar; the dividing plate is positioned above the growth furnace and connected with the lifting mechanism so as to synchronously rotate with the crystal bars under the driving of the lifting mechanism, and the orthographic projection of the bisector of the dividing plate is positioned between two adjacent crystal lines of the crystal bars; the sensor is positioned on the periphery of the dividing disc and has a distance with the dividing disc, and the sensor is used for detecting the bisector of the dividing disc; the control device is connected with the infrared detector and the sensor and is used for controlling the infrared detector to measure the diameter of the crystal bar when the sensor detects the bisector of the dividing plate.

Optionally, the number of the crystal lines of the crystal bar is four, the four crystal lines are uniformly distributed at intervals in the circumferential direction of the crystal bar, and the dividing disc is a quartering dividing disc.

Optionally, any point on the bisector of the index plate is equidistant from the adjacent two crystal lines.

Optionally, the control device includes a storage unit, and data measured by the infrared detector is stored in the control device.

Optionally. Optionally, the crystal bar growing apparatus further includes a heat shield device, which is located in the growth furnace, located at the periphery of the crystal bar, and extends toward the inner wall of the growth furnace.

The control device comprises one or more of a computer, an MCU and a PLC.

Optionally, the orthographic projection of the index plate covers the ingot.

The sensor includes one or both of a touch sensor and a photosensor.

Optionally, the axis of the crystal bar coincides with the center line of the index plate.

The invention also provides a crystal bar growing method which is carried out based on the crystal bar growing equipment in any scheme.

The crystal bar growth equipment and the crystal bar growth method have the following beneficial effects: through the improved structural design, the invention can effectively avoid the measurement error caused when the probe of the infrared detector irradiates the crystal line of the crystal bar, is beneficial to improving the detection accuracy of the diameter of the crystal bar, is beneficial to improving the quality of the crystal bar and improves the production yield.

Drawings

FIG. 1 is a schematic structural diagram of an apparatus for growing an ingot according to the present invention.

FIG. 2 is a schematic view showing a positional relationship between an index plate and an ingot in the ingot growing apparatus according to the present invention.

Description of the element reference numerals

11-a growth furnace; 12-a crucible; 13-pulling the wire; 14-an infrared detector; 15-an index plate; 151-bisector; 16-a sensor; 17-a control device; 18-a boule; 181-crystal line; 19-heat shield arrangement

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

Please refer to fig. 1-2. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.

As shown in fig. 1 and 2, the present invention provides an ingot growing apparatus, which includes a growing furnace 11, a crucible 12, a heater, a pulling mechanism, an infrared detector 14, an index plate 15, a sensor 16 and a control device 17; a detection window is arranged at the upper part of the growth furnace 11; the crucible 12 is positioned in the growth furnace 11 and is used for placing raw materials for growing the crystal bar 18, such as silicon blocks and the like; the heater is positioned in the growth furnace 11 and at the periphery of the crucible 12 and is used for heating the raw material in the crucible 12 in the growth process of the crystal bar 18 so as to heat and melt the raw material into a liquid state; the pulling mechanism comprises a pulling wire 13 (the pulling wire 13 includes but is not limited to a tungsten wire rope) and a driving device, one end of the pulling wire 13 is connected with the upper part of the crystal bar 18, the other end of the pulling wire 13 is connected with the driving device (not shown in the figure) (i.e. one end of the pulling wire 13 extends into the growth furnace 11, the other end of the pulling wire passes through a cover plate at the top of the growth furnace 11 and extends to the upper part outside the growth furnace 11 and is connected with the driving device), the lower part of the crystal bar 18 extends into the crucible 12, and the surface of the crystal bar 18, i.e. the crystal bar 18, is provided with a plurality of crystal wires 181 extending along the longitudinal direction of the crystal bar 18; the infrared detector 14 is positioned at the periphery of the growth furnace 11, and a detection signal of the infrared detector 14 reaches the surface of the crystal bar 18 through the detection window to measure the diameter of the crystal bar 18; the dividing plate 15 is positioned above the growth furnace 11 (generally, above the outside of the growth furnace 11), and is connected with the pulling mechanism so as to rotate synchronously with the crystal bar 18 under the driving of the pulling mechanism, and the orthographic projection of the bisector 151 of the dividing plate 15 is positioned between two adjacent crystal lines 181 of the crystal bar 18, that is, the straight line of the orthographic projection of the bisector 151 of the dividing plate 15 does not intersect with any crystal line 18; the sensor 16 is positioned on the periphery of the indexing disk 15 and has a distance with the indexing disk 15, and the sensor 16 is used for detecting a bisector 151 of the indexing disk 15; the control device 17 is connected to the infrared detector 14 and the sensor 16, and is configured to control the infrared detector 14 to measure the diameter of the ingot 18 when the sensor 16 detects the bisector 151 of the index plate 15. During the growth of the ingot 18, the molten raw material (i.e., melt) contacts the lower portion of the ingot 18 (the seed crystal at the beginning of the growth of the ingot 18), and the pulling wire 13 pulls the ingot 18 to rotate and rise, thereby achieving the growth of the ingot 18. In the process, the indexing disc 15 is driven by the pulling mechanism to rotate synchronously with the crystal bar 18, and when the sensor 16 detects the bisector 151 of the indexing disc 15, the controller is triggered to send a signal to enable the infrared detector 14 to measure the diameter of the crystal bar 18. Since the bisector 151 of the index plate 15 and the crystal line 181 of the ingot 18 do not intersect each other and the rotation of the index plate 15 and the rotation of the ingot 18 are synchronized, the detection signal of the infrared detector 14 does not impinge on the crystal line 181 in the circumferential direction of the ingot 18 even when the sensor 16 detects the bisector 151 of the index plate 15 (note that it is necessary to set the impingement point of the detection signal of the infrared detector 14 at the position of the amorphous line 181 of the ingot 18, preferably at the position of the middle between two adjacent crystal lines 181 on the ingot 18 and close to the melt level at the initial mounting), thereby effectively avoiding the measurement error caused when the probe of the infrared detector 14 impinges on the crystal line 181 of the ingot 18, contributing to the improvement of the detection accuracy of the diameter of the ingot 18, and contributing to the improvement of the production yield.

By way of example, the number of bisectors 151 of the index plate 15 is preferably the same as the number of crystal lines 181 of the ingot 18. As shown in fig. 2, in an example, four crystal lines 181 of the crystal bar 18 are provided, the four crystal lines 181 are uniformly distributed at intervals in the circumferential direction of the crystal bar 18, the crystal lines 181 extend in the longitudinal direction of the crystal bar 18 and grow synchronously with the growth of the crystal bar 18, and the single crystal orientation can be determined by the crystal lines 181; accordingly, the dividing plate 15 is preferably a quartering dividing plate, that is, the dividing plate 15 is divided into four regions having the same size and shape by four equal dividing lines 151 (for example, when the dividing plate 15 is a circular plate, the quartering is divided into 4 sectors having the same size), the four equal dividing lines 151 extend from the center of the dividing plate 15 to the edge of the dividing plate 15, and the four equal dividing points are formed by the intersection of the four equal dividing lines 151 at the edge of the dividing plate 15, and when the sensor 16 detects the equal dividing points, the equal dividing lines 151 are substantially detected. (note that the uppermost portion of the ingot 18 is actually a seed portion with a non-uniform diameter, and the seed portion 181 is not shown in this embodiment.) in other examples, the number of lines of the ingot 18 may be 3, and in this case, the index plate 15 is preferably a trisection index plate. Of course, in other examples, the number of bisectors of the index plate may be different from the number of crystal lines of the ingot, and it is important to ensure that the orthographic projection of the bisector 151 of the index plate 15 is located between two adjacent crystal lines 181 of the ingot 18 at the time of initial setting, that is, the straight line on which the orthographic projection of the bisector 151 of the index plate 15 is located does not intersect with any crystal line 18. In this embodiment, the number of the two is preferably the same.

The infrared detector 14(IRcon) is a device for detecting the diameter of the ingot 18 based on the infrared temperature measurement principle, which is well known to those skilled in the art and will not be described in detail for the sake of brevity.

As an example, any point on the bisector 151 of the index plate 15 is equidistant from the two adjacent crystal lines 181. In order to avoid interference on rotation and lifting of the crystal bar 18, the dividing plate 15 is located above the crystal bar 18 and is at a certain distance from the crystal bar 18, so that the bisector 151 of the dividing plate 15 is not on the same plane as the crystal lines 181 of the crystal bar 18, and is not physically intersected, so that the description herein that "any point on the bisector 151 of the dividing plate 15 is at the same distance from any two adjacent crystal lines 181" can also be described that any point on the orthographic projection extension line of the bisector 151 of the dividing plate 15 is at the same distance from any two adjacent crystal lines 181, that is, the point is located in the middle of the arc surface of the crystal bar 18 between two adjacent crystal lines 181, or the straight line on the orthographic projection of the bisector 151 of the dividing plate 15 is coincident with the bisector of the arc surface between two adjacent crystal lines 181. With this arrangement, even if a slight delay occurs between the detection of the bisector 151 of the index plate 15 by the sensor 16 and the triggering of the control device 17 to issue a control command, the detection signal from the infrared detector 14 can be effectively prevented from impinging on the crystal line 181.

By way of example, the orthographic projection of the dividing disk 15 covers the crystal bar 18, that is, the surface area of the dividing disk 15 is greater than or equal to the surface area of the crystal bar 18 in the radial direction, and the surface area of the dividing disk 15 is preferably the same as the surface area of the crystal bar 18 in the radial direction (excluding the area of the crystal line 181 and the area not including the seed crystal). And in a further example, the axial line of the crystal bar 18 is coincident with the central line of the dividing disc 15, namely the pulling line passes through the center of the dividing disc 15, so as to ensure that the rotation of the dividing disc 15 and the rotation of the crystal bar 18 are completely synchronous, which is beneficial to further improving the detection accuracy.

As an example, the crystal bar growing apparatus further includes a heat shielding device 19, which is located in the growth furnace 11, located at the periphery of the crystal bar 18, and extends toward the inner wall of the growth furnace 11, and the heat shielding device 19 can change the thermal field distribution of the growth furnace 11 to effectively adjust the temperature gradient required for the growth of the crystal bar 18.

Illustratively, the ingot growing apparatus further comprises an inert gas supply device (not shown) in communication with an inert gas source for supplying an inert gas, such as argon, into the growth furnace 11 to maintain an inert gas atmosphere in the growth furnace 11 to avoid contamination of the raw material and the ingot 18. (the bottom of the growth furnace is provided with an exhaust port to maintain the dynamic balance of the inert gas in the growth furnace)

As an example, the control device 17 includes a storage unit, and data measured by the infrared detector 14 is stored in the control device 17. The control device 17 may calculate an average value every time the infrared detector 14 detects data of four points in the circumferential direction of the same horizontal plane of the ingot 18, or may calculate an average value of data collected within a predetermined time, thereby making up for the deficiency of the conventional IRcon single-point measurement method and contributing to improvement of detection accuracy. The crystal growth equipment can further comprise a display screen, and the control device 17 is connected with the display screen to display the detection result of the infrared detector 14 in real time.

The control device 17 includes, as an example, one or more of a computer, an MCU (single chip microcomputer), and a PLC (programmable logic controller). When the control means 17 is a PLC, the PLC may be integrated with the overall controller of the device. Or the master controller of the device integrates the control function of the PLC. The control device 17 can also be connected with a driving device of the lifting mechanism for controlling the lifting speed, and can also be connected with the heater for controlling the heating temperature. In a further example, the control device 17 is simultaneously connected with the infrared detector 14, the sensor 16, the heater and the pulling mechanism to control the heating temperature of the heater and/or the pulling speed of the pulling mechanism according to the diameter of the crystal ingot 18 detected by the infrared detector 14, thereby realizing the adjustment of the growth diameter of the crystal ingot 18.

By way of example, the ingot 18 includes, but is not limited to, a single crystal silicon rod, and accordingly, the feedstock includes, but is not limited to, a silicon ingot.

As an example, the sensor 16 includes one or both of a touch sensor and a photoelectric sensor, that is, the sensor 16 may be single or plural, and when the sensor 16 is plural, the plural sensors 16 may be of the same type or different types. In this embodiment, the sensor is preferably single, so as to simplify the structure of the device and reduce data interference.

The use principle of the crystal bar growth equipment is as follows: during the growth of the crystal bar 18, the crystal bar 18 rotates and rises from the melt in the crucible 12 under the pulling of the pulling mechanism to realize growth, the dividing plate 15 and the crystal bar 18 realize synchronous rotation under the driving of the pulling mechanism, and the control device 17 triggers the infrared detector 14 to measure the diameter of the crystal bar 18 at the moment when the sensor 16 detects the bisector 151 of the dividing plate 15. Because the straight line on which the orthographic projection of the bisector 151 of the time division scale 15 is initially set does not have an intersection point with the crystal line 181 of the crystal bar 18, the irradiation point of the detection signal of the infrared detector 14 does not fall on the crystal line 181 of the crystal bar 18, so that the measurement error caused when the probe of the infrared detector 14 irradiates on the crystal line 181 of the crystal bar 18 can be effectively avoided, the accuracy of diameter detection of the crystal bar 18 can be improved, the quality of the crystal bar can be greatly improved, and the production yield can be improved.

The invention also provides a crystal bar growing method which is carried out based on the crystal bar growing equipment in any scheme. Specifically, in the crystal bar growing process, through the cooperation of the index plate and the infrared detector, the infrared detector measures the diameter of the crystal bar when the sensor detects the bisector of the index plate, and can average a plurality of data obtained after detecting every edge of the crystal bar for one circle (preferably, the number of the data detected along one circle of the crystal bar is the same as the number of crystal lines of the crystal bar), so that the accuracy of the diameter detection of the crystal bar can be effectively improved, and the production quality of the crystal bar is improved.

In summary, the present invention provides an apparatus and a method for growing a seed crystal rod. The crystal bar growth equipment comprises a growth furnace, a crucible, a heater, a lifting mechanism, an infrared detector, an index plate, a sensor and a control device; a detection window is arranged at the upper part of the growth furnace; the crucible is positioned in the growth furnace and is used for placing raw materials for crystal bar growth; the heater is positioned in the growth furnace and at the periphery of the crucible and is used for heating the raw materials in the crucible in the growth process of the crystal bar; the pulling mechanism comprises a pulling wire and a driving device, one end of the pulling wire is connected with the upper part of the crystal bar, the other end of the pulling wire is connected with the driving device, the lower part of the crystal bar extends into the crucible, and the surface of the crystal bar is provided with a plurality of crystal wires extending along the longitudinal direction of the crystal bar; the infrared detector is positioned at the periphery of the growth furnace, and a detection signal of the infrared detector reaches the surface of the crystal bar through the detection window so as to measure the diameter of the crystal bar; the dividing plate is positioned above the growth furnace and connected with the lifting mechanism so as to synchronously rotate with the crystal bars under the driving of the lifting mechanism, and the orthographic projection of the bisector of the dividing plate is positioned between two adjacent crystal lines of the crystal bars; the sensor is positioned on the periphery of the dividing disc and has a distance with the dividing disc, and the sensor is used for detecting the bisector of the dividing disc; the control device is connected with the infrared detector and the sensor and is used for controlling the infrared detector to measure the diameter of the crystal bar when the sensor detects the bisector of the dividing plate. Through the improved structural design, the invention can effectively avoid the measurement error caused when the probe of the infrared detector irradiates the crystal line of the crystal bar, is beneficial to improving the detection accuracy of the diameter of the crystal bar, is beneficial to improving the quality of the crystal bar and improves the production yield.

The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.