阅读说明：本技术 薄膜电容器、连结型电容器、逆变器以及电动车辆 (Film capacitor, connection type capacitor, inverter, and electric vehicle ) 是由 中尾吉宏 于 2019-01-24 设计创作，主要内容包括：薄膜电容器A的主体部(3)具有一对相对置的面、将该一对的面连接的一对在第1方向x相对置的第2侧面(3c、3d)。主体部(3)的电介质薄膜(1)具有在第1方向x连续的绝缘边缘部(6),第1金属膜(2a)以及第2金属膜(2b)通过具有与绝缘边缘部(6)相接的第1端部(N1)并与第2侧面(3c、3d)形成θ1角度的第1缝隙(8)、以及第2缝隙(9)被分离。第2缝隙(9)与第1缝隙(8)在接触点(M)相连。在第1方向x,在将从第1端部(N1)朝向接触点(M)的方向设为正方向时,第2缝隙(9)相对于接触点(M)在第1方向的负方向具有第2端部(N2)。第2端部(N2)与在第1方向x的负方向相邻的第2缝隙(9)所相连的第1缝隙(8)的第1端部(N1)在第1方向x被配置于相同的位置,或者被配置于比该第1端部(N1)更靠负方向,tan(θ1)为0.15以上且0.35以下。(A body portion (3) of the film capacitor A has a pair of surfaces facing each other, and a pair of 2 nd side surfaces (3c, 3d) facing each other in the 1 st direction x and connecting the pair of surfaces. The dielectric thin film (1) of the main body part (3) has an insulating edge part (6) continuous in the 1 st direction x, and the 1 st metal film (2a) and the 2 nd metal film (2b) are separated by a1 st slit (8) and a2 nd slit (9) which have a1 st end part (N1) in contact with the insulating edge part (6) and form an angle theta 1 with the 2 nd side surfaces (3c, 3 d). The 2 nd slit (9) is connected with the 1 st slit (8) at a contact point (M). When the direction from the 1 st end (N1) to the contact point (M) is a positive direction in the 1 st direction x, the 2 nd slit (9) has a2 nd end (N2) in the 1 st direction negative direction with respect to the contact point (M). A1 st end (N1) of a1 st slit (8) having a2 nd end (N2) connected to a2 nd slit (9) adjacent in the negative direction of the 1 st direction x is arranged at the same position in the 1 st direction x or in the negative direction with respect to the 1 st end (N1), and tan (theta 1) is 0.15 to 0.35.)

1. A film capacitor is provided with: a rectangular parallelepiped body portion in which at least one pair of a dielectric thin film and a1 st metal film and a2 nd metal film facing each other with the dielectric thin film interposed therebetween are laminated; and an external electrode on the surface of the main body,

the main body portion has: a pair of opposing surfaces located in a thickness direction of the dielectric thin film; a pair of 1 st side surfaces and a pair of 2 nd side surfaces which are opposite and connect the pair of surfaces,

the external electrode is disposed on the 1 st side surface,

the dielectric thin film has an insulating edge portion extending continuously in the 1 st direction at a portion not covered with the 1 st metal film or the 2 nd metal film, assuming that the 2 nd side surface is in the 1 st direction,

the 1 st metal film and the 2 nd metal film each include a plurality of partial films separated from each other by a plurality of 1 st slits and a plurality of 2 nd slits, the plurality of 1 st slits forming an angle of θ 1 with the 2 nd side surface and having 1 st end portions contacting the insulating edge portion, the plurality of 2 nd slits including inclined slits forming an angle of θ 2 with the 1 st side surface,

one of said 2 nd slits is connected to one of said 1 st slits at a contact point,

when the direction from the 1 st end of one of the 1 st slits toward the contact point is set as the positive direction of the 1 st direction in the 1 st direction,

the 2 nd slit has a2 nd end portion located on the opposite side of the insulating edge portion with respect to the contact point and located in a negative direction of the 1 st direction,

the 2 nd end of the 2 nd slit positioned in the positive direction of the 1 st direction among the two adjacent 2 nd slits and the 1 st end of the 1 st slit connected to the 2 nd slit positioned in the negative direction of the 1 st direction are arranged at the same position in the 1 st direction or arranged closer to the negative direction of the 1 st direction than the 1 st end, and

regarding the θ 1, tan (θ 1) is 0.15 or more and 0.35 or less.

2. The film capacitor of claim 1,

when two adjacent 2 nd slits are projected to the 1 st side surface, the length of overlapping of the 2 nd slits is larger than the interval of the 1 st direction of the 1 st slit.

3. The film capacitor of claim 1 or 2,

when two adjacent 2 nd slits are projected to the 1 st side surface, the length of overlapping of the 2 nd slits is longer than the length of the 1 st direction of the 1 st slit.

4. The film capacitor of any one of claims 1 to 3,

regarding the θ 1, tan (θ 1) is 0.27 or more.

5. The film capacitor of any one of claims 1 to 4,

the inclined gap is connected with the No.1 gap at the contact point.

6. The film capacitor of any one of claims 1 to 5,

the 2 nd slit has a 3 rd end located in a positive direction of the 1 st direction with respect to the contact point.

7. The film capacitor of any one of claims 1 to 6,

the 2 nd slit includes three or less linear slits.

8. The film capacitor of any one of claims 1 to 6,

the 2 nd slit includes a linear slit.

9. The film capacitor of any one of claims 1 to 8,

in the 1 st direction, a direction from the 1 st end of the 1 st metal film toward the contact point is opposite to a direction from the 1 st end of the 2 nd metal film toward the contact point, as viewed from above in the thickness direction.

10. A connected capacitor is provided with: a plurality of thin film capacitors; and a bus bar electrically connecting the plurality of thin film capacitors,

the plurality of thin film capacitors comprising the thin film capacitor of any one of claims 1 to 9.

11. An inverter is provided with: a bridge circuit having a switching element; and a capacitor part connected with the bridge circuit,

the capacitor portion includes the film capacitor as claimed in any one of claims 1 to 9.

12. An electric vehicle is provided with: a power source; an inverter connected to the power source; a motor connected to the inverter; and a wheel driven by the motor,

the inverter is the inverter of claim 11.

Technical Field

The present disclosure relates to a film capacitor, a connection type capacitor, an inverter, and an electric vehicle.

Background

The film capacitor includes, for example: a dielectric thin film formed by thinning a polypropylene resin, and a metal film formed by vapor deposition on the surface of the dielectric thin film. The metal film is used as an electrode. With this configuration, in the thin film capacitor, when a short circuit occurs in an insulation defective portion of the dielectric thin film, the metal film around the defective portion is evaporated and scattered by the energy of the short circuit, and the insulation defective portion of the dielectric thin film is insulated. The thin film capacitor has such self-replenishing property that insulation breakdown hardly occurs.

Thus, the film capacitor is less likely to catch fire or get an electric shock when the circuit is short-circuited. Therefore, in recent years, the applications of the film capacitor have been expanded to power circuits for led (light Emitting diode) lighting and the like, inverter systems for motor driving and solar power generation of hybrid vehicles, and the like.

The structure of the film capacitor is classified into a winding type and a lamination type. In the wound film capacitor, when the number of windings is increased, self-replenishing property tends to be lowered near the center of the winding. In addition, the wound film capacitor is likely to generate an unnecessary space when it is housed in the case. In the laminated film capacitor, the self-replenishing property of the wound film capacitor is hardly lowered. Further, the laminated film capacitor is less likely to generate unnecessary space even when housed in a case.

A laminate in which a plurality of dielectric thin films and metal films are laminated is often cut to obtain a laminated thin film capacitor. By cutting the dielectric thin film and the metal film at the same time, the metal film is exposed at the cut surface. In order to reduce insulation deterioration of the cut surface, a method of removing a metal film at the cut portion, a cutting shape of a metal film capable of insulating the cut surface, and the like are disclosed (see patent documents 1 and 2).

Prior art documents

Patent document

Patent document 1: international publication No. 2013/082951

Patent document 2: JP 2015-153998 publication

Disclosure of Invention

The disclosed film capacitor is provided with: a rectangular parallelepiped body portion in which at least one pair of a dielectric thin film and a1 st metal film and a2 nd metal film facing each other with the dielectric thin film interposed therebetween are laminated; and an external electrode on a surface of the main body. The main body portion has: a pair of opposing surfaces located in a thickness direction of the dielectric thin film; and a pair of 1 st side surfaces and a pair of 2 nd side surfaces which are opposite and connect the pair of surfaces. The external electrode is disposed on the 1 st side. When the direction of the 2 nd side surface is set as the 1 st direction, the dielectric thin film has an insulating edge portion in which a portion not covered with the 1 st metal film or the 2 nd metal film continuously extends in the 1 st direction. The 1 st metal film and the 2 nd metal film each include a plurality of partial films separated from each other by a plurality of 1 st slits and a plurality of 2 nd slits, the plurality of 1 st slits form an angle θ 1 with the 2 nd side surface and have 1 st end portions in contact with the insulating edge portion, and the plurality of 2 nd slits include inclined slits forming an angle θ 2 with the 1 st side surface. In the 1 st direction, when a direction from the 1 st end of one of the 1 st slits toward the contact point is set to a positive direction of the 1 st direction, the 2 nd slit has a2 nd end located on a side opposite to the insulating edge portion with respect to the contact point and located in a negative direction of the 1 st direction. The 1 st end of the 1 st slot, which is connected to the 2 nd end of the 2 nd slot positioned in the positive direction of the 1 st direction and the 2 nd slot positioned in the negative direction of the 1 st direction, among the two adjacent 2 nd slots, is disposed at the same position in the 1 st direction or is disposed in the negative direction of the 1 st direction with respect to the 1 st end, and tan (θ 1) with respect to the θ 1 is 0.15 to 0.35.

The disclosed connecting capacitor is provided with: a plurality of thin film capacitors; and a bus bar electrically connecting the plurality of thin film capacitors, the plurality of thin film capacitors including the thin film capacitor.

The disclosed inverter is provided with: a bridge circuit having a switching element; and a capacitor unit connected to the bridge circuit, the capacitor unit including the thin film capacitor.

The electric vehicle of the present disclosure includes: a power source; an inverter connected to the power source; a motor connected to the inverter; and a wheel driven by the motor, wherein the inverter is the inverter.

Drawings

Fig. 1 is a perspective view showing a film capacitor.

Fig. 2 is an example of a sectional view taken along line II-II of fig. 1.

Fig. 3 is a plan view showing an example of a metallized film.

Fig. 4 is a perspective view illustrating cutting of the stacked body.

Fig. 5 is a plan view showing an example of a metallized film.

Fig. 6 is a plan view showing an example of a metallized film.

Fig. 7 is a plan view showing an example of a metallized film.

Fig. 8 is a plan view showing the arrangement of the 1 st metal film and the 2 nd metal film.

Fig. 9 is an example of a sectional view taken along line II-II of fig. 1.

Fig. 10 is a top view of the 1 st metalized film used in the example of fig. 9.

Fig. 11 is a top view of the 2 nd metallized film used in the example of fig. 9.

Fig. 12 is a perspective view schematically showing a connection type film capacitor.

Fig. 13 is a schematic configuration diagram showing an example of the configuration of the inverter.

Fig. 14 is a schematic configuration diagram showing an example of the configuration of the electric vehicle.

Fig. 15 is a plan view showing the size of a metal film of the metallized film used in the examples.

Fig. 16 is a plan view showing the size of a metal film of the metallized film used in the examples.

Fig. 17 is a plan view showing the size of a metal film of the metallized film used in the examples.

Fig. 18 is a plan view showing the size of a metal film of the metallized film used in the example.

Detailed Description

As shown in fig. 1 and 2, the laminated film capacitor includes: a thin film capacitor body 3, and a1 st external electrode 4a and a2 nd external electrode 4b as a pair of external electrodes. Hereinafter, the film capacitor body 3 is simply referred to as the body 3. The main body 3 is formed by laminating at least one set of a1 st dielectric thin film 1a, a1 st metal film 2a, a2 nd dielectric thin film 1b, and a2 nd metal film 2 b. The body portion 3 has a rectangular parallelepiped shape and has a pair of opposing surfaces located in the stacking direction, a pair of opposing 1 st side surfaces 3a, 3b connecting the pair of surfaces, and a pair of opposing 2 nd side surfaces 3c, 3 d. The 1 st external electrode 4a and the 2 nd external electrode 4b are provided on the 1 st side surfaces 3a and 3b by metallization. No external electrode is provided on the 2 nd side surfaces 3c and 3d of the main body 3 facing each other. The 1 st external electrode 4a and the 2 nd external electrode 4b may be simply referred to as the external electrodes 4.

The body 3 of the laminated film capacitor a shown in fig. 2 is formed by laminating a1 st metalized film 5a having a1 st metal film 2a on a1 st surface 1ac of a1 st dielectric film 1a and a2 nd metalized film 5b having a2 nd metal film 2b on a2 nd surface 1bc of a2 nd dielectric film 1 b. The 1 st metal film 2a is electrically connected to the 1 st external electrode 4a on the 1 st side surface 3a of the main body portion 3. The 2 nd metal film 2b is electrically connected to the 2 nd external electrode 4b on the 1 st side surface 3b of the main body portion 3. As shown in fig. 1, the direction of the 2 nd side surfaces 3c and 3d where no external electrode is provided is defined as the 1 st direction x, and the direction of the 1 st external electrode 4a and the 2 nd external electrode 4b is defined as the 2 nd direction y. The thickness direction of the 1 st dielectric thin film 1a and the 2 nd dielectric thin film 1b is defined as a 3 rd direction z. The 3 rd direction z is also a direction in which the 1 st dielectric film 1a and the 2 nd dielectric film 1b are laminated.

Fig. 2 is a sectional view taken along line II-II of fig. 1. In fig. 2, the 1 st dielectric thin film 1a, the 2 nd dielectric thin film 1b, the 1 st metal film 2a, and the 2 nd metal film 2b have a length direction x, a width direction y, and a thickness direction z in the 1 st direction x, the 2 nd direction y, and the 3 rd direction z, respectively.

The 1 st dielectric film 1a of the film capacitor a has a1 st surface 1ac and a2 nd surface 1ad opposed to each other in the 3 rd direction z, and has a1 st side portion 1ae and a2 nd side portion 1af opposed to each other in the 2 nd direction y. The 2 nd dielectric thin film 1b has a1 st surface 1bc and a2 nd surface 1bd opposed to each other in the 3 rd direction z, and has a1 st side portion 1be and a2 nd side portion 1bf opposed to each other in the 2 nd direction y.

The 1 st metalized film 5a is obtained by forming a1 st metal film 2a on the 1 st surface 1ac of the 1 st dielectric film 1 a. The 1 st metalized film 5a has a so-called insulating edge portion 6a in which an exposed portion of the 1 st dielectric film 1a continuously extends in the 1 st direction x in the vicinity of the 2 nd side portion 1af on the 1 st surface 1 ac.

The 2 nd metallized film 5b is obtained by forming a2 nd metal film 2b on the 1 st surface 1bc of the 2 nd dielectric film 1 b. The 2 nd metallized film 5b has a so-called insulating edge portion 6b in which a portion of the 2 nd dielectric film 1b exposed continuously extends in the 1 st direction x in the vicinity of the 2 nd side portion 1bf on the 1 st surface 1 bc.

As shown in fig. 2, the metallized films 5a and 5b are stacked in a state where the 2 nd direction y, which is the width direction, is slightly shifted from each other, and one or more sets are stacked in the 3 rd direction z.

When a potential difference exists between the 1 st metal film 2a and the 2 nd metal film 2b, a capacitance is generated in the effective region 7 where the 1 st metal film 2a and the 2 nd metal film 2b overlap with the 1 st dielectric thin film 1a or the 2 nd dielectric thin film 1b interposed therebetween.

The laminated film capacitor a is obtained as follows. The long 1 st metalized film 5a and the long 2 nd metalized film 5b are stacked with a slight shift from each other in the 2 nd direction y as the width direction to produce a laminate. The external electrode 4a is formed by thermal spraying on the 1 st side surface 3a located in the 2 nd direction y of the obtained laminate, and the 2 nd external electrode 4b is formed by thermal spraying on the 1 st side surface 3 b. The laminate having the 1 st external electrode 4a and the 2 nd external electrode 4b formed thereon is cut at a predetermined interval in the 1 st direction x to obtain each body portion 3. The external electrodes 4 may be formed on the respective main bodies 3 after the laminate is cut.

Since the features of the embodiment common to the 1 st metalized film 5a and the 2 nd metalized film 5b of the thin-film capacitor a are explained, the reference numerals a and b may be omitted as shown in fig. 3 and may be referred to as only the dielectric thin film 1, the metal thin film 2, the metalized thin film 5, and the like.

Fig. 3 shows an example of the metallized film 5. The metal film 2 has: a1 st portion 2d adjacent to the insulating edge portion 6, and a2 nd portion 2e located on the opposite side of the 1 st portion 2d from the insulating edge portion 6. The 1 st portion 2d has a1 st end N1 contacting the insulating margin 6, and includes a plurality of 1 st partial films 2di separated from each other by a plurality of 1 st slits 8 forming an angle θ 1 with respect to the 2 nd side surfaces 3c and 3 d.

The 2 nd site 2e contains a plurality of 2 nd partial films 2ei separated from each other by a plurality of 2 nd slits 9. A2 nd slit 9 is connected to a1 st slit 8 at the contact point M.

The contact point M may be located at the boundary between the 1 st site 2d and the 2 nd site 2e, but may also be located at the 2 nd site 2 e. In other words, the region in which the 2 nd slit 9 is arranged in the 2 nd direction y may be the 2 nd portion 2e, and a part of the 1 st slit 8 may be located in the 2 nd portion 2 e.

In the 1 st direction x, the direction from the 1 st end N1 of one 1 st slit 8 to the contact point M is a positive direction in the 1 st direction, and the opposite direction, that is, the direction from the contact point M to the 1 st end N1 is a negative direction in the 1 st direction.

One 2 nd slit 9 includes an inclined slit 9a forming an angle θ 2 with the 1 st side faces 3a, 3 b. θ 2 is greater than 0 ° and less than 90 °. One 2 nd slit has a2 nd end N2 located on the opposite side of the insulating edge portion 6 with respect to the contact point M and in the negative direction of the 1 st direction x. The 2 nd end N2 of the 2 nd slit 9 positioned in the positive direction of the 1 st direction x among the two adjacent 2 nd slits 9 is arranged at the same position in the 1 st direction x or in the negative direction closer to the 1 st direction x than the 1 st end N1 with respect to the 1 st end N1 of the 1 st slit 8 connected to the 2 nd slit 9 positioned in the negative direction of the 1 st direction x.

In one embodiment shown in fig. 3, the 2 nd slit 9 is an inclined slit 9a forming an angle θ 2 with the 1 st side surfaces 3a, 3 b. θ 2 is greater than 0 ° and less than 90 °. The 1 st side surfaces 3a and 3b are parallel to the 1 st direction x. In fig. 3, θ 2 represents an angle between a2 nd slit 9 and a one-dot chain line parallel to the 1 st direction x.

A1 st portion film 2di and a2 nd portion film 2ei are electrically connected at a connection 11.

For example, as shown in fig. 3, the metal film 2 is cut in the 2 nd direction y with a broken line S. Fig. 4 is a perspective view showing two body parts 3-1, 3-2 obtained by cutting the laminate. The laminate of fig. 4 has the metal film 2 shown in fig. 3 inside. The 2 nd side surface 3d is formed at the cut portion of the main body portion 3-1 located on the left side in fig. 4, and the 2 nd side surface 3c is formed at the cut portion of the main body portion 3-2 located on the right side in fig. 4.

As shown in fig. 3, the broken line S, i.e., the metal film 2 on the left side of the cut portion S, is located on the 2 nd side surface 3d of the main body portion 3-1, and the metal film 2 on the right side of the cut portion S is located on the 2 nd side surface 3c of the main body portion 3-2. Since the 1 st slot 8 forms an angle θ 1 with respect to the 2 nd side surfaces 3c and 3d, the 1 st end N2 of the 2 nd slot 9 and the 1 st end N1 of the 1 st slot 8 connected to the 2 nd slot 9 positioned in the negative direction of the 1 st direction x are arranged at the same position in the 1 st direction x or in the negative direction closer to the 1 st direction x than the 1 st end N1, whereby the part of the double-line arrow P1 of the main body portion 3-1 and the part of the double-line arrow P2 of the main body portion 3-2 are insulated from the external electrode 4. In fig. 3, θ 1 represents an angle between a1 st slit 8 and a one-dot chain line parallel to the broken line S.

In the present embodiment, the value of θ 1 is 0.15 to 0.35 by tan (θ 1). By setting tan (θ 1) to 0.15 or more, the insulation properties of the 2 nd side surfaces 3c and 3d, which are the cut portions, can be improved. Tan (θ 1) may be 0.27 or more. Although the metal film 2 connected to P1 on the 2 nd side surface 3d of the main body portion 3-1 and the metal film 2 connected to P2 on the 2 nd side surface 3c of the main body portion 3-2 do not contribute to the development of electrostatic capacitance, the area of the metal film 2 that does not contribute to the development of electrostatic capacitance can be reduced by setting tan (θ 1) to 0.35 or less.

The adjacent two 2 nd slits 9 have a portion where the 2 nd slits 9 overlap each other when projected on the 1 st side surface. The length of the portion where the 2 nd slits 9 overlap each other is d 1. When the interval of the 1 st direction x of the adjacent 1 st slits 8 is set to d2, d1 may be greater than d 2. Further, when the length of the 1 st direction x of the 1 st slit 8 is set to w1, d1 may be greater than w 1. Since d1 is larger than d2 and w1, the 2 nd end N2 of the 2 nd slit 9 can be arranged in the negative direction of the 1 st direction x with respect to the 1 st end N1 of the 1 st slit 8 connected to the 2 nd slit 9 positioned in the negative direction of the 1 st direction x of the 2 nd slit 9.

As shown in fig. 3, the metal film 2 may or may not have a continuous portion 2c that is continuous in the 1 st direction x without being separated by a gap on the 2 nd portion 2e opposite to the 1 st portion 2 d. In the case of having the continuous portion 2c, the continuous portion 2c of the metal film 2 is electrically connected to the external electrode 4. In the case where the continuous portion 2c is not provided, the 2 nd partial films 2ei of the metal film 2 are electrically connected to the external electrodes 4, respectively.

In the 1 st direction x, the length of a2 nd slot 9 may be greater than the sum of the length of a1 st slot 8 and the distance d2 between adjacent 1 st slots.

When the 1 st metalized film 5a and the 2 nd metalized film 5b, which are long, are wound around an annular winding core and laminated to each other when a laminate is produced, wrinkles may occur in the metalized films 5 during winding. In particular, when the metalized film 5 has a slit parallel to the 1 st direction x and/or the 2 nd direction y, that is, when θ 1 and/or θ 2 is 0 °, wrinkles are likely to occur. In particular, since the 1 st portion 2d occupying the largest area of the metalized film 5 has the 1 st slit 8, if the 1 st slit 8 is parallel to the 2 nd direction y, many wrinkles are likely to be generated in the metalized film 5.

On the other hand, when θ 1 and θ 2 are larger than 0 °, that is, when the 1 st slit 8 and the 2 nd slit 9 are inclined with respect to both the 1 st direction x and the 2 nd direction y, the tension applied to the metallized film 5 at the time of winding the metallized film 5 can be released in the film winding direction, that is, in the direction inclined with respect to the 1 st direction x, and wrinkles are less likely to occur.

For θ 2, the value of tan (θ 2) may be in the range of 0.01 or more and 0.45 or less. By setting tan (θ 1) and tan (θ 2) to values of 0.01 or more, wrinkles are less likely to occur.

In the 2 nd direction y, the length of the 1 st slit 8 may be 50% or more and 80% or less with respect to the length of the metal film 2. If the ratio of the length of the 1 st slit 8 to the length of the metal film 2 is 50% or more, the insulation properties of the 2 nd side surfaces 3c and 3d can be further improved, and if it is 80% or less, the area of the metal film 2 that does not contribute to the development of the electrostatic capacitance can be reduced.

The 2 nd part film 2ei may have a width of 200 μm or more on average. When the average width of the 2 nd portion film 2ei is 200 μm or more, the 2 nd portion film 2ei is less likely to be broken due to short-circuiting or the like.

The above-described arrangement of the 1 st slit 8 and the 2 nd slit 9, that is, the tan (θ 1) range, the tan (θ 2) range, the 1 st end N1 and the 2 nd end N2 arrangement, the description of d1 and d2, the occupancy of the 1 st portion 2d, the width of the 2 nd partial film 2ei, and the like can be applied to the examples described later. Hereinafter, the same reference numerals are given to the overlapping constituent elements, and the description thereof may be omitted.

As shown in fig. 5, the 2 nd slit 9 may have a partial slit 9b extending from an end of the inclined slit 9a further in the 1 st direction x. The 2 nd slit 9 shown in fig. 5 has partial slits 9b at both ends of the inclined slit 9a, respectively. The 2 nd slit 9 shown in fig. 5 may be said to include three linear slits.

The 2 nd slit 9 shown in fig. 5 has partial slits 9b connected to both ends of the inclined slit 9a, but may have the partial slits 9b only at either one of the left end and the right end of the inclined slit 9a in fig. 5.

In fig. 5, the right end of the inclined slit 9a is connected to the 1 st slit 8, and the contact point M is located at the right end of the inclined slit 9 a. One of the partial slits 9b extends in the 1 st direction x from the right end of the inclined slit 9a, i.e., the contact point M. When the contact point M is set as the base point, the 1 st slit 8 and the inclined slit 9a among the 1 st slit 8, the inclined slit 9a, and the partial slit 9b which are in contact with each other through the contact point M extend in the same direction in the 1 st direction x, that is, in the negative direction of the 1 st direction x shown in fig. 5. The partial slit 9b extends in the 1 st direction x in the direction opposite to the 1 st slit 8 and the inclined slit 9a, that is, in the positive direction of the 1 st direction x. In other words, the partial slit 9b extending from the contact point M extends in the direction opposite to the direction in which the 1 st end N1 of the 1 st slit 8 with respect to the contact point M is located. The partial slit 9b extending from the contact point M may have a portion extending in the same direction as the position of the 1 st end N1 of the 1 st slit 8 with respect to the contact point M. For example, in fig. 5, the partial slit 9b extending from the contact point M in the positive direction of the 1 st direction x may have a portion extending from the contact point M in the negative direction of the 1 st direction x. The length of the part of the partial slit 9b extending from the contact point M in the negative direction of the 1 st direction x may be shorter than the length of the part extending from the contact point M in the positive direction of the 1 st direction x. In fig. 5, the 3 rd end N3 is defined as the positive direction end in the 1 st direction x of the partial slit 9b extending from the contact point M in the positive direction in the 1 st direction x.

The partial slit 9b connected to the left end of the inclined slit 9a may extend in the negative direction of the 1 st direction x. When the partial slit 9b continuous to the left end of the inclined slit 9a extends in the negative direction of the 1 st direction x, that is, in the same direction as the inclined slit 9a, the length d1 of the portion where the 2 nd slits 9 overlap each other when projected on the 1 st side is increased.

The 2 nd slit 9 may also be connected to the 1 st slit 8 at a contact point M between both ends of the inclined slit 9 a. The 2 nd slit 9 shown in fig. 6 includes one inclined slit 9a in a straight line shape, and is connected to the 1 st slit 8 at a contact point M between both ends. In fig. 6, the 3 rd end N3 is an end of the inclined slit 9a in the positive direction of the 1 st direction x. A1 st slot 8 may also intersect a2 nd slot 9. With this configuration, the length of P1 can be further increased, and the insulation properties on both sides of the cut portion S of the laminate can be further improved.

As shown in fig. 6, the 2 nd portion 2e may have a 3 rd portion 2ej formed by the 2 nd slit 9 and the 1 st slit 8. The 3 rd portion 2ej is a portion substantially indicated by an ellipse of a broken line in fig. 6. The 3 rd site 2ej may be located on the opposite side of the direction in which the 1 st partial film 2di and the 2 nd partial film 2ei extend as a whole, i.e., on the positive side in the 1 st direction x with respect to the linker 11, or may not extend in the 1 st direction x.

The metal film 2 shown in fig. 3, 5 and 6 is such that the 1 st slit 8 is connected to the inclined slit 9a at the contact point M. As shown in fig. 5, in the case where the 2 nd slit 9 has a partial slit 9b connected to the right end of the inclined slit 9a, the 1 st slit 8 may be connected to the partial slit 9b at a contact point M. The partial slit 9b connected to the 1 st slit 8 may extend from the right end of the inclined slit 9a in the 1 st direction x in the positive direction or the negative direction as shown in fig. 5, or may extend in the 2 nd direction y in the negative direction.

As shown in fig. 7, the 1 st portion film 2di may also be further divided by a 3 rd slit 16 extending along the 1 st direction x. The 1 st partial films 2dj divided by the 3 rd slit 16 extending in the 1 st direction x are electrically connected to each other through the fuse 17.

Fig. 7 shows a case where the 3 rd slit 16 is applied to the metal film 2 shown in fig. 6, but the 3 rd slit 16 may be applied to the metal film 2 shown in fig. 3 or 5.

Although fig. 3 and 5 to 7 show an example in which the 1 st slit 8 extends from the lower left 1 st end portion N1 toward the upper right contact point M, the 1 st slit 8 may extend from the lower right 1 st end portion N1 toward the upper left contact point M. In other words, the arrangement shown in fig. 3 and 5 to 7 may be reversed left and right.

Fig. 8 is a plan view showing the arrangement of the 1 st metal film 2a and the 2 nd metal film 2b of the laminate using the metal films 2 shown in fig. 3. The 1 st metalized film 5a shown on the upper side of fig. 8 and the 2 nd metalized film 5b shown on the lower side are stacked in the 2 nd direction y with a slight shift from each other. The continuous portion 2ac of the 1 st metal film 2a overlaps the insulating edge portion 6b of the 2 nd metallized film 5 b. The continuous portion 2bc of the 2 nd metal film 2b overlaps the insulating edge portion 6a of the 1 st metallization film 5 a.

In fig. 3, the left arrow P1 of the cutting section S is shorter than the right arrow P2. Therefore, the area insulated from the external electrode 4, that is, the size of the insulating portion is smaller on the 2 nd side surface 3d located on the left side of the cut portion S than on the 2 nd side surface 3c located on the right side of the cut portion S. That is, in the case where both the 1 st partial film 2di and the 2 nd partial film 2ei extend leftward from the connection portion 11 as shown in fig. 3, the insulating property tends to be low on the 2 nd side surface 3d on the left side of the cut portion S with respect to the 2 nd side surface 3c on the right side of the cut portion S regardless of the position of the cut portion S. On the other hand, in the case where both the 1 st partial film 2di and the 2 nd partial film 2ei extend rightward from the connection portion 11, the insulating property tends to be low on the 2 nd side surface 3c on the right side of the cut portion S with respect to the 2 nd side surface 3d on the left side of the cut portion S regardless of the position of the cut portion S.

The direction of the 1 st metal film 2a from the 1 st end N1 toward the contact point M and the direction of the 2 nd metal film 2b from the 1 st end N1 toward the contact point M may be the same orientation. In this case, the 1 st metal film 2a and the 2 nd metal film 2b are in the following states: the side portions that easily improve the insulation, i.e., the side portions having P2 of fig. 3, overlap each other, and the side portions that easily become lower in insulation, i.e., the side portions having P1 of fig. 3, overlap each other. Therefore, the side portion of the body 3 having P2 has high insulation properties. However, the insulation property tends to be low in the other side portion having P1.

As shown in fig. 8, the direction of the 1 st metal film 2a from the 1 st end N1 toward the contact point M and the direction of the 2 nd metal film 2b from the 1 st end N1 toward the contact point M may be oppositely directed. In other words, the shape of the 2 nd partial membrane 2aei, which is rotated by half a turn in the 3 rd direction z axis, may be configured to coincide with the shape of the 2 nd partial membrane 2 bei. In this case, P2, which easily improves the insulation of the 1 st metal film 2a or the 2 nd metal film 2b, is disposed on both the 2 nd side surfaces 3c and 3d of the main body 3, thereby improving the insulation of both the 2 nd side surfaces 3c and 3 d.

Fig. 9 is a cross-sectional view showing an example of a series connection type film capacitor a. In the main body portion 3 shown in fig. 9, two capacitor portions, i.e., C1 and C2, are connected in series.

The 1 st metal film 2a has: the 1 st metal film 2a1 located on the left side of fig. 9, and the 1 st metal film 2a2 located on the right side of fig. 9. That is, the 1 st metal film 2a has two 1 st metal films 2a1 and 2a2 arranged in the 2 nd direction y. The 1 st metal film 2a1 is electrically connected to the 1 st external electrode 4a on the 1 st side surface 3a on the left side of the main body 3. The 1 st metal film 2a2 is electrically connected to the 2 nd external electrode 4b on the 1 st side surface 3b on the right side of the body 3.

The 1 st metalized film 5a has an insulating edge portion 6a continuously extending in the 1 st direction x in the center portion in the 2 nd direction y. The insulating margin portion 6a is a portion where the metal film 2 is not formed and the 1 st surface 1ac of the 1 st dielectric thin film 1a is exposed. The 1 st metal films 2a1 and 2a2 are electrically insulated by the insulating edge portion 6 a.

The 2 nd metallized film 5b has insulating edge portions 6b extending continuously in the 1 st direction x at both ends in the 1 st direction x. The insulating margin portion 6b is a portion where the 1 st surface 1bc of the 2 nd dielectric thin film 1b on which the metal film 2 is not formed is exposed. The 2 nd metal film 2b is not electrically connected to the 1 st external electrode 4a and the 2 nd external electrode 4 b.

These 1 st and 2 nd metallized films 5a and 5b are stacked as shown in fig. 9, and one or more layers are stacked in the 3 rd direction z.

In the series connection type film capacitor a, the 1 st capacitor part C1 and the 2 nd capacitor part C2 are connected in series. The 1 st capacitor C1 is formed in the effective region 7 where the dielectric thin film 1a or 1b is sandwiched between the 1 st metal film 2a1 and the 2 nd metal film 2 b. The 2 nd capacitor C2 is formed in the effective region 7 where the dielectric thin film 1a or 1b is sandwiched between the 1 st metal film 2a2 and the 2 nd metal film 2 b.

Fig. 10 shows an example of the 1 st metalized film 5 a. In the case of a series connection type film capacitor, the 1 st metal film 2a1 has a1 st site 2a1d adjacent to the insulating edge portion 6a, and a2 nd site 2a1e located on the opposite side of the 1 st site 2a1d from the insulating edge portion 6 a. The 2 nd metal film 2a2 has: the 1 st portion 2a2d adjacent to the insulating edge portion 6a, and the 2 nd portion 2a2e on the opposite side of the 1 st portion 2a2d from the insulating edge portion 6 a.

Fig. 11 shows an example of the 2 nd metallized film 5b corresponding to the 1 st metallized film 5a of fig. 10. The 2 nd metal film 2b has a1 st portion 2b1d adjacent to the insulating edge portion 6b and a2 nd portion 2b1e located on the opposite side of the 1 st portion 2b1d from the insulating edge portion 6b in the lower part of fig. 11, and has a1 st portion 2b2d adjacent to the insulating edge portion 6b and a2 nd portion 2b2e located on the opposite side of the 1 st portion 2b2d from the insulating edge portion 6b in the upper part of fig. 11.

The above-described arrangement of the 1 st slits 8 and 2 nd slits 9 is applied to the 1 st sites 2a1d, 2a2d, 2b1d, 2b2d, and the 2 nd sites 2a1e, 2a2e, 2b1e, and 2b2e of the series connection type film capacitor a, whereby the insulation properties of the 2 nd side surfaces 3c and 3d, which are cut portions, can also be improved.

As shown in fig. 10, the 1 st metal films 2a1, 2a2 may or may not have continuous portions 2a1c, 2a2c that are not separated by a slit and are continuous in the 1 st direction x on the side of the 2 nd site 2e opposite to the 1 st site 2 d. In the case of having the continuous portions 2a1c, 2a2c, the continuous portions 2a1c, 2a2c of the metal film 2 are electrically connected to the external electrode 4. Without the continuous portions 2a1c, 2a2c, the 2 nd partial film 2ei is electrically connected to the external electrode 4, respectively.

As shown in fig. 11, the 2 nd metal film 2b may or may not have a continuous portion 2bc which is not separated by a gap and is continuous in the 1 st direction x between the 2 nd portions 2b1e and 2b2 e.

Fig. 10 and 11 show an example in which the direction from the 1 st end N1 of the 1 st metal film 2a1 toward the contact point M is the same as the direction from the 1 st end N1 of the 1 st metal film 2a2 toward the contact point M in the 1 st direction x. The direction of the 1 st metal film 2a1 from the 1 st end N1 toward the contact point M may be opposite to the direction of the 1 st metal film 2a2 from the 1 st end N1 toward the contact point M in the 1 st direction x. The direction from the 1 st end N1 toward the contact point M of the upper portion of the 2 nd metal film 2b and the direction from the 1 st end N1 toward the contact point M of the lower portion of the 2 nd metal film 2b may be opposite in the 1 st direction x.

A direction of the 1 st metal film 2a1 forming the 1 st capacitor C1 from the 1 st end N1 toward the contact point M and a direction of the lower portion of the 2 nd metal film 2b from the 1 st end N1 toward the contact point M may be opposite in the 1 st direction x, and a direction of the 1 st metal film 2a2 forming the 2 nd capacitor C2 from the 1 st end N1 toward the contact point M and a direction of the upper portion of the 2 nd metal film 2b from the 1 st end N1 toward the contact point M may be opposite in the 1 st direction x. With this arrangement, the insulation properties of the laminate on both sides of the cut portion S can be improved.

The metal film 2 may be a metal film containing aluminum as a main component, for example. The thickness of the metal film 2 may be, for example, 14 to 70nm on average. By making the thickness (average thickness) of the metal film 2 as a thin layer of 14 to 70nm, the metal film 2 is in close contact with the dielectric thin film 1, and the metallized thin film 5 is less likely to break even if tension is applied thereto. Therefore, an effective area contributing to the electrostatic capacitance can be sufficiently obtained. Further, by setting the average thickness of the metal film 2 to 14nm or more, the capacity decrease at the time of insulation breakdown is reduced, and the insulation breakdown voltage is improved. By setting the average thickness of the metal film 2 to 70nm or less, the self-replenishing property can be maintained, and the insulation breakdown voltage can be increased. Average thickness of metal film 2 the cross section of metallized thin film 5 may be subjected to ion milling and evaluated by a Scanning Electron Microscope (SEM) or the like.

The metal film 2 may have a so-called Heavy edge (Heavy edge) configuration at least in the vicinity of the connection portion with the external electrode 4. The vicinity of the connection portion with the external electrode 4 is, in other words, the vicinity of the 1 st side portion 1e of the dielectric thin film 1. The double-sided structure is, for example, a structure in which the metal film 2 in the vicinity of the connection portion with the external electrode 4 has a high thickness and a low resistance with respect to the effective region 7 in which the 1 st metal film 2a and the 2 nd metal film 2b overlap. Hereinafter, the vicinity of the connection portion of the metal film 2 having the double-edged structure with the external electrode 4 may be referred to as a double-edged portion.

The film thickness of the metal film 2 in the vicinity of the connection portion with the external electrode 4 is, for example, 2 times or more, specifically 20nm or more, the film thickness capable of exhibiting self-replenishing property. The thickness of the metal film 2 at the heavy-side part may be set to be 80nm or less. The metal film 2 has a heavy-edge portion, and the electrical connection between the metal film 2 and the external electrode 4 is improved. Further, the low-resistance heavy-side portion is electrically connected to the external electrode 4, and thereby the Equivalent Series Resistance (ESR) of the thin-film capacitor a can be reduced.

In the film capacitor a, the heavy-side portion of the 1 st metallized film 5a overlaps the insulating edge portion 6b of the 2 nd metallized film 5b, and the heavy-side portion of the 2 nd metallized film 5b overlaps the insulating edge portion 6a of the 1 st metallized film 5 a. The width of the heavy-side portion in the 2 nd direction y may be, for example, 0.5mm to 3 mm.

Examples of the material of the insulating resin used for the dielectric film 1 include polypropylene (PP), polyethylene terephthalate (PET), Polyphenylene Sulfide (PPs), polyethylene naphthalate (PEN), Polyarylate (PAR), polyphenylene ether (PPE), polyether imide (PEI), and cycloolefin polymer (COP). In particular, Polyarylate (PAR) has a high dielectric breakdown voltage.

The thickness of the dielectric thin film 1 may be 0.7 μm or more on average, or 4 μm or less, for example. By setting the average thickness of the dielectric thin film 1 to 0.7 μm or more, the smoothness of the metal film 2 and the insulation breakdown voltage can be both satisfied. By setting the average thickness of the dielectric thin film 1 to 4 μm or less, the capacitance can be increased.

The film capacitor a can be manufactured, for example, as follows. First, the dielectric thin film 1 is prepared. For example, a resin solution in which an insulating resin is dissolved in a solvent is prepared, and the resin solution is formed into a sheet shape on the surface of a base film made of polyethylene terephthalate (PET), for example, and dried to volatilize the solvent, thereby obtaining the dielectric film 1. The forming method can be appropriately selected from known film forming methods such as a doctor blade method, a die coating method, and a knife coating method. Examples of the solvent used for the molding include methanol, isopropanol, n-butanol, ethylene glycol monopropyl ether, methyl ethyl ketone, methyl isobutyl ketone, xylene, propylene glycol monomethyl ether acetate, dimethylacetamide, cyclohexane, and an organic solvent containing a mixture of two or more selected from these. The produced resin film may be subjected to stretching processing by melt extrusion.

The dielectric thin film 1 may be made of only the insulating resin, or may contain another material. The components other than the resin contained in the dielectric thin film 1 are, for example, the organic solvent and the inorganic filler described above. Examples of the inorganic filler include inorganic oxides such as alumina, titania and silica, inorganic nitrides such as silicon nitride, and glass. In particular, when a material having a high relative permittivity, such as a composite oxide having a perovskite structure, is used as the inorganic filler, the relative permittivity of the entire dielectric thin film 1 can be increased, and the thin film capacitor a can be downsized. Further, the inorganic filler may be subjected to surface treatment such as silane coupling treatment, titanate coupling treatment, or the like. By surface-treating the inorganic filler, the compatibility between the inorganic filler and the resin can be improved.

The dielectric thin film 1 may be a composite film containing the inorganic filler in an amount of less than 50 mass% and containing a resin in an amount of 50 mass% or more. By forming the dielectric thin film 1 as a composite thin film, it is possible to obtain an effect such as an increase in relative permittivity by the inorganic filler while maintaining the flexibility of the resin. The inorganic filler may have a size (average particle diameter) of 4 to 1000 nm.

After the produced dielectric thin film 1 is peeled off from the base thin film, a metal component such as aluminum (Al) is deposited on one surface of the dielectric thin film 1 to form a metal film 2, thereby obtaining a metalized thin film 5. Examples of the method of forming a pattern on the metal film 2 include an oil transfer pattern forming method, a laser pattern forming method, and the like. The oil transfer pattern forming method is a method in which a metal component is evaporated after an oil mask is applied to the dielectric thin film 1. The laser patterning method is a method in which a metal component is evaporated in the dielectric thin film 1, and then a part of the metal film 2 is evaporated by a laser beam.

In the case of the double-sided structure, the metalized film 5 is formed by masking the portion other than the portion where the double-sided portion is formed, and further depositing zinc (Zn), for example, on the portion of the metal component subjected to the deposition where no mask is formed. In this case, the thickness of the film deposited as the heavy-side portion may be 1 to 3 times the thickness of the metal component deposited.

The resulting metallized film 5 can be slit to a given width. The 1 st metalized film 5a and the 2 nd metalized film 5b are stacked in a set of 2 sheets in a state of being slightly shifted in the width direction, i.e., the 2 nd direction y, and wound around an annular winding core. The wound laminate is cut in the 2 nd direction y to obtain the body portion 3 of the film capacitor a. The annular winding core is sometimes referred to as a winding drum.

On both end surfaces in the 2 nd direction y of the obtained body 3, that is, the 1 st side surfaces 3a and 3b, metallized electrodes are formed as external electrodes 4a and 4b, respectively, to obtain a thin film capacitor a. For example, a method such as metal sputtering, or plating may be used to form the external electrode 4. After the external electrodes 4 are formed on the laminate, the laminate may be cut.

The outer surface of the main body 3 on which the external electrodes 4 are formed may be covered with an exterior member not shown.

In addition to the aluminum (Al) described above, a metal such as zinc (Zn) or a material such as an alloy may be used for the external electrode 4.

As a material of the metallization electrode, at least one metal material selected from zinc, aluminum, copper, and solder can be used.

Fig. 12 is a perspective view schematically showing an example of a connection type capacitor. In fig. 12, the case and the outer resin covering the surface of the capacitor are not shown in order to facilitate understanding of the structure of the connected capacitor. In the connection type capacitor B, a plurality of film capacitors C are connected in parallel by a pair of bus bars 21, 23. The bus bars 21 and 23 have terminal portions 21a and 23a for external connection and lead terminal portions 21b and 23 b. The lead terminal portions 21b and 23b are connected to the respective external electrodes of the film capacitor C.

When the film capacitor a is included in the film capacitor C of the connection type capacitor B, the connection type capacitor B having excellent insulation properties can be obtained.

The connection type capacitor B may have at least one film capacitor a, and may have two or more film capacitors a. In a state where a plurality of film capacitors C are arranged in 4, for example, as shown in fig. 11, bus bars 21 and 23 are attached to the external electrodes at both ends of the body 3 via bonding materials, thereby obtaining a connected capacitor B.

The connection type capacitor B may be configured such that the film capacitors are arranged in a plane as shown in fig. 12, or may be configured such that the film capacitors are stacked. The thin-film capacitor C may be disposed such that the 2 nd direction y, which is the direction in which the external electrodes are disposed, is along the vertical direction.

In addition, the film capacitor a and the coupling capacitor B may be formed as a resin-molded or case-molded capacitor by filling a resin into a space in the case after being accommodated in the case.

Fig. 13 is a schematic configuration diagram for explaining an example of the inverter. Fig. 13 shows an inverter E that generates ac from dc. As shown in fig. 13, the inverter E includes a bridge circuit 31 and a capacitor 33. The bridge circuit 31 is composed of a switching element such as an igbt (insulated gate Bipolar transistor) and a diode, for example. The capacitor 33 is disposed between the input terminals of the bridge circuit 31, and stabilizes the voltage. The inverter E includes the thin film capacitor a as the capacitor unit 33.

The inverter E is connected to a booster circuit 35 that boosts the voltage of the dc power supply. The bridge circuit 31 is connected to a motor generator MG as a drive source.

Fig. 14 is a schematic configuration diagram of an electric vehicle. Fig. 14 shows a Hybrid Electric Vehicle (HEV) as an example of an electric vehicle.

The electric vehicle F includes: a driving motor 41, an engine 43, a transmission 45, an inverter 47, a power source or battery 49, front wheels 51a, and rear wheels 51 b.

The electric vehicle F includes, as a drive source, outputs of the motor 41, the engine 43, or both of them. The output of the drive source is transmitted to a pair of left and right front wheels 51a via a transmission mechanism 45. The power source 49 is connected to the inverter 47, and the inverter 47 is connected to the motor 41.

Electric powered vehicle F shown in fig. 14 includes vehicle ECU53 and engine ECU 57. Vehicle ECU53 totally controls the entire electric vehicle E. The engine ECU57 controls the number of revolutions of the engine 43 to drive the electric vehicle E. The electric vehicle E further includes a driving device such as an ignition key 55 operated by a driver or the like, an accelerator pedal not shown, and a brake. A drive signal corresponding to an operation of a driving device such as a driver is input to vehicle ECU 53. Based on the drive signal, vehicle ECU53 outputs instruction signals to engine ECU57, power source 49, and inverter 47 as a load. The engine ECU57 controls the number of revolutions of the engine 43 in response to the instruction signal, and drives the electric vehicle E.

As the inverter 47 of the electric vehicle F, an inverter E, that is, an inverter E including the film capacitor a described above in the capacitor portion 33 is used. In the electrically powered vehicle F, since the film capacitor a has a small dielectric loss and a small increase in dielectric loss due to charge/discharge cycles, the electrostatic capacitance can be maintained for a long period of time, and switching noise generated in the inverter 47 and the like can be reduced for a long period of time.

The inverter E of the present embodiment can be applied not only to the Hybrid Electric Vehicle (HEV) but also to various power conversion applications such as an Electric Vehicle (EV), a fuel cell vehicle, an electric bicycle, a generator, and a solar battery.