阅读说明：本技术 用于处理基板的方法 (Method for processing substrate ) 是由 李承泫 崔丞佑 金显哲 具盻炫 于 2021-04-16 设计创作，主要内容包括：提供了一种调节膜应力的方法。在一实施例中,通过在第一步骤中顺序且交替地供应第一反应物和第二反应物来在基板上形成第一膜,并且通过在第二步骤中向第一膜供应第三反应物来将第一膜转化为第二膜。通过控制第一步骤和第二步骤的比率来调节第二膜的膜应力。(A method of modulating membrane stress is provided. In an embodiment, a first film is formed on a substrate by sequentially and alternately supplying a first reactant and a second reactant in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second step. The film stress of the second film is adjusted by controlling the ratio of the first step and the second step.)

1. A method for modulating membrane stress, comprising:

loading a substrate onto a substrate support;

in a first step, a first film is formed on a substrate, the first step including:

supplying a first reactant; and

supplying a second reactant, wherein the first reactant and the second reactant are supplied sequentially and alternately;

converting the first film to a second film by supplying a third reactant to the first film in a second step, wherein a cycle ratio of the first step to the second step is greater than 5 to adjust a stress of the second film.

2. The method of claim 1, wherein the second reactant is activated by radio frequency power.

3. The method of claim 2, wherein the second reactant is at least one of Ar and He or a mixture thereof.

4. The method of claim 3, wherein the second reactant densifies the first film; and the first membrane comprises fragments of the first reactant.

5. The method of claim 1, wherein the third reactant is activated by radio frequency power and chemically reacts with the first membrane.

6. The method of claim 1, wherein the first step is repeated at least once and the second step is repeated at least once,

wherein the first and second steps are sequentially repeated at least once.

7. The method of claim 1, wherein the first reactant is a silicon-containing gas.

8. The method of claim 1, wherein the second reactant is at least one of Ar and He or a mixture thereof.

9. The method of claim 1, wherein the third reactant is an oxygen-containing gas.

10. The method of claim 7, the silicon-containing gas being one ofAt least one of: DIPAS, SiH₃N(iPr)₂；TSA,(SiH₃)₃N；DSO,(SiH₃)₂；DSMA,(SiH₃)₂NMe；DSEA,(SiH₃)₂NEt；DSIPA,(SiH₃)₂N(iPr)；DSTBA,(SiH₃)₂N(tBu)；DEAS,SiH₃NEt₂；DTBAS,SiH₃N(tBu)₂；BDEAS,SiH₂(NEt₂)₂；BDMAS,SiH₂(NMe₂)₂；BTBAS,SiH₂(NHtBu)₂；BITS,SiH₂(NHSiMe₃)₂；TEOS,Si(OEt)₄；SiCl₄；HCD,Si₂Cl₆；3DMAS,SiH(N(Me)₂)₃；BEMAS,SiH₂[N(Et)(Me)]₂；AHEAD,Si₂(NHEt)₆；TEAS,Si(NHEt)₄；Si₃H₈；DCS,SiH₂Cl₂；SiHI₃；SiH₂I₂Or mixtures thereof.

11. The method of claim 9, wherein the oxygen-containing gas is O₂,O₃,CO_2,H₂O,NO₂And N₂At least one of O or a mixture thereof.

12. The method of claim 1, wherein the second film comprises silicon oxide.

13. The method of claim 4, wherein the fragment of the first reactant is at least one of silicon, carbon, nitrogen, chlorine, iodine, hydrogen, and an alkyl group or a mixture thereof.

14. The method of claim 1, wherein the tensile stress of the second film increases as the cycle ratio of the first step to the second step increases.

15. The method of claim 1, wherein the compressive stress of the second film increases as the cycle ratio of the first step to the second step decreases.

16. The method of claim 5, wherein the radio frequency power is supplied in pulses having a duty cycle of 10 to 75%.

17. The method of claim 1, wherein the substrate comprises a pattern and the second film is a hard mask formed on the pattern, wherein the first step and the second step are performed at 50 ℃ or less.

18. The method of claim 17, wherein the wet etch rate of the second film is adjusted by controlling a cycle ratio of the first step to the second step.

19. The method of claim 18, wherein a wet etch rate of the second film is approximately the same as a wet etch rate of a silicon oxide hard mask formed at 300 ℃ or above.

20. The method of claim 17, wherein the second film is a silicon oxide hard mask.

21. A method for modulating membrane stress, comprising:

loading a substrate onto a substrate support of a reactor;

forming a first film on the back surface of the substrate by sequentially and alternately supplying a first reactant and a second reactant in a first step;

converting the first membrane into a second membrane by supplying a third reactant to the first membrane in a second step;

forming a third film on the front surface of the substrate;

and removing the second film from the back surface of the substrate, wherein the cycle ratio of the first step to the second step is more than 5 so as to adjust the stress of the second film.

22. The method of claim 21, wherein the stress of the second film counteracts the stress of the substrate.

23. The method of claim 21, wherein the third film is formed at a temperature of 300 ℃ or greater.

24. The method of claim 21, wherein the substrate is processed by sequentially transferring it from one reactor to another in a system having a plurality of reactors.

25. The method of claim 21, wherein the second reactant is activated by radio frequency power.

26. The method of claim 21, wherein the third reactant is activated by radio frequency power and chemically reacts with the first membrane.

27. The method of claim 21, wherein the first reactant is a silicon-containing gas.

28. The method of claim 21, wherein the second reactant is at least one of Ar and He or a mixture thereof.

29. The method of claim 21, wherein the third reactant is an oxygen-containing gas.

30. The method of claim 21, wherein the second film is silicon oxide.

31. The method of claim 21, wherein the first step is repeated at least once and the second step is repeated at least once; and sequentially repeating the first and second steps as a group cycle at least once.

32. A method for modulating membrane stress, comprising:

loading a substrate onto a substrate support;

forming a first film on a substrate;

forming a second film on the first film, comprising:

in the first step, a first reactant and a second reactant are alternately and sequentially supplied, and the second film is converted into a third film by supplying a third reactant to the second film in the second step, wherein a cycle ratio of the first step to the second step is greater than 5 to adjust a stress of the second film.

33. The method of claim 32, wherein the second reactant is activated by radio frequency power.

34. The method of claim 32, wherein the third reactant is activated by radio frequency power and chemically reacts with the second membrane.

35. The method of claim 32, wherein the stress of the third film counteracts the stress of the first film.

36. The method of claim 32, wherein the first reactant is a silicon-containing gas.

37. The method of claim 32, the second reactant being at least one of Ar and He, or a mixture thereof.

38. The method of claim 32, the third reactant being an oxygen-containing gas.

39. The method of claim 32, wherein the third film is silicon oxide.

40. The method of claim 32, wherein the first step is repeated at least once and the second step is repeated at least once; and is

The first and second steps are sequentially repeated at least once as a group cycle.

41. The method of claim 32, wherein the substrate has a gap to be filled; and the gap is filled with the first film.

Technical Field

The present disclosure provides a method for processing a substrate, and more particularly, a method for adjusting stress of a film formed on a substrate.

Background

The substrate and the film formed thereon may be heat-treated in a high temperature process, thereby generating stress. This may lead to substrate deformation such as warpage or cracking, or film peeling or device performance degradation. Fig. 1 shows how the stress of the film may cause peeling of the film or cracking or deformation of the substrate.

Disclosure of Invention

The present disclosure provides a method for processing a substrate. More specifically, the present disclosure provides a method for modulating the stress of a membrane.

According to an embodiment, the first film may be formed on the substrate by sequentially and alternately supplying the first reactant and the second reactant in the first step. The first membrane may be converted to the second membrane by supplying a third reactant in a second step. The second reactant may be activated. The third reactant may be activated and reactive with the first film. The stress of the second film can be adjusted by controlling the cycle ratio of the first step and the second step.

According to another embodiment, a first film may be formed on a substrate having a pattern as a hard mask by sequentially and alternately supplying a first reactant and a second reactant in a first step. The first membrane may be converted to the second membrane by supplying a third reactant in a second step. The second reactant may be activated. The third reactant may be activated and reactive with the first film. The wet etch rate of the hard mask formed at 50 c may be almost the same as the wet etch rate of the silicon oxide hard mask formed at 300 c or above.

According to another embodiment, the first film may be formed on the back surface of the substrate by sequentially and alternately supplying the first reactant and the second reactant in the first step, and may be converted into the second film by supplying the third reactant in the second step. The second reactant may be activated. The third reactant may be activated and reactive with the first film. The third film may be formed on the front surface of the substrate at a high temperature. After processing the substrate, the second film may be etched away.

According to another embodiment, a substrate having a gap to be filled is provided, and the gap may be filled with a first film. The second film may be formed on the first film by sequentially and alternately supplying the first reactant and the second reactant in the first step, and may be converted into the third film by supplying the third reactant in the second step. The second reactant may be activated. The third reactant is activated and reactive with the second membrane.

Drawings

The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

fig. 1 is a diagram of film peeling and substrate deformation caused by stress.

FIG. 2 is a diagram of a substrate processing flow according to one embodiment.

FIG. 3 is a schematic diagram of a process flow according to an embodiment.

Fig. 4 is a schematic diagram of duty cycle definition.

FIG. 5 is a schematic illustration of a process flow according to another embodiment.

FIG. 6 is SiO showing the cycling ratio according to step 1 and step 2₂Graph of film stress.

FIG. 7 is SiO₂Graph of membrane composition.

Fig. 8 is a diagram of a substrate processing flow according to another embodiment.

Fig. 9A and 9B are schematic diagrams of a process according to another embodiment.

Fig. 10 is a diagram of a substrate processing flow according to another embodiment.

FIG. 11 is a graph showing SiO under various conditions₂Graph of wet etch rate of films.

Fig. 12A and 12B are schematic diagrams of a process according to another embodiment.

Fig. 13 is a diagram of a substrate processing flow according to another embodiment.

Detailed Description

The substrate processing method according to the present disclosure provides a method of adjusting the stress of a film and preventing and/or suppressing deformation of a substrate or peeling of the film due to the stress of the film or the substrate.

FIG. 2 is a process flow according to an embodiment, and details of FIG. 2 are described below.

-loading a substrate (101): a substrate may be loaded onto the substrate support in the reaction space. The substrate support supports the substrate and provides thermal energy to the substrate to maintain the substrate temperature at a specified temperature.

-forming a first film (201): the first film may be formed on the substrate by alternately and sequentially supplying a first reactant and a second reactant to the substrate. The first reactant may be a precursor comprising elemental Si and the second reactant may be activated by radio frequency power. The second reactant may not chemically react with the first reactant. For example, the first reactant may be an aminosilane precursor. The second reactant may be an inert gas, such as Ar or He or a combination thereof. In this step, the first reactant may be dissociated and broken by the plasma, and adsorbed onto the substrate. Since there may be no chemical reaction between the first reactant and the second reactant, the film adsorbed onto the substrate may include fragments of dissociated or broken molecules of the first reactant, such as silicon (Si), carbon (C), nitrogen (N), chlorine (Cl), iodine (I), alkyl ligands (e.g., C)_nH_2n+1) And hydrogen (H) fragments and/or mixtures thereof. The first layer of the first film may be chemisorbed to the substrate. The second layer may be deposited on the first film and may include a stack of those segments. The first film may be densified by the activated second gas. The activated second gas may also assist in dissociation of the first gas. This first step may be repeated "M" times.

-converting the first membrane into a second membrane (301): a third reactant may be supplied to the first film formed on the substrate. The third reactant is activatable by radio frequency power and chemically reacts with the first film. The third reactant may be an oxygen-containing gas, more preferably, the third reactant may be oxygen. In this step, the first film may be converted to a second film. The first film may be converted to the second film due to the chemical reaction of the activated third reactant with the first film. The second film may be, for example, SiO₂And (3) a membrane. This second step may be repeated "N" times.

In fig. 2, the cycle ratio of the first step 201 to the second step 301 may be greater than 5, preferably greater than 20, or more preferably greater than 50. For example, the first step 201 may be repeated 50 times and the second step 301 may be repeated once. Furthermore, first step 201 and second step 301 may be repeated "X" times, as a group cycle or super-cycle, at least once, to more facilitate the conversion of the first film to the second film as the thickness of the first film increases.

Fig. 3 is a schematic diagram of the process flow of fig. 2. The first step and the second step of fig. 3 correspond to the first step 201 and the second step 301 of fig. 2, respectively. In the first step of fig. 3, the first layer may be formed by sequentially and alternately supplying the first reactant and the second reactant. For example, the second reactant may be activated by radio frequency power.

In another embodiment, the second reactant may be supplied continuously as shown in FIG. 3. In fig. 3, the first step may be repeated "M" times, at least once, followed by the second step. In the second step of fig. 3, a third reactant may be supplied and activated by plasma, and the second step may be repeated "N" times, at least once. The recycle ratio of the first and second steps, i.e. M/N, may be greater than 5, preferably greater than 20 or more preferably greater than 50. The activated third reactant may convert the first membrane to the second membrane. For example, the first reactant may be a Si-containing precursor, the second reactant may be Ar, and the third reactant may be oxygen. The silicon-containing precursor as the first reactant may be at least one of: DIPAS, SiH₃N(iPr)₂；TSA,(SiH₃)₃N；DSO,(SiH₃)₂；DSMA,(SiH₃)₂NMe；DSEA,(SiH₃)₂NEt；DSIPA,(SiH₃)₂N(iPr)；DSTBA,(SiH₃)₂N(tBu)；DEAS,SiH₃NEt₂；DTBAS,SiH₃N(tBu)₂；BDEAS,SiH₂(NEt₂)₂；BDMAS,SiH₂(NMe₂)₂；BTBAS,SiH₂(NHtBu)₂；BITS,SiH₂(NHSiMe₃)₂；TEOS,Si(OEt)₄；SiCl₄；HCD,Si₂Cl₆；3DMAS,SiH(N(Me)₂)₃；BEMAS,SiH₂[N(Et)(Me)]₂；AHEAD,Si₂(NHEt)₆；TEAS,Si(NHEt)₄；Si₃H₈；DCS,SiH₂Cl₂；SiHI₃；SiH₂I₂Or mixtures thereof. As a firstThe oxygen of the three reactants may be O₂,O₃,CO_2,H₂O,NO₂And N₂At least one of O or a mixture thereof.

The first film may be a stack of fragments of Si precursor molecules densified by a plasma and may be converted to SiO by an oxygen plasma₂As a second film. In other words, step 1 may be a source coating step and step 2 may be an oxygen treatment step. In fig. 3, the plasma conditions of step 2 may vary. For example, the rf power may be provided in pulses having a duty cycle to reduce damage to the substrate or sub-layers.

When the rf power is supplied in pulses, the ratio of the actual rf power supply time b to the unit cycle time a of the rf pulses, i.e., b/a, is defined as the duty ratio, as shown in fig. 4. In another embodiment according to the inventive concept, the radio frequency power may be provided in pulses having a duty cycle in a range of 10% to 75%.

Fig. 5 is another embodiment according to the inventive concept. In the first step, the plasma may be supplied in a continuous mode, but in the second step, the plasma may be supplied in a pulsed mode with a certain duty ratio. The plasma provided in pulses is not limited thereto. In another embodiment, the plasma may be pulsed to at least one of the first step and the second step.

Table 1 is an experimental condition according to an embodiment of fig. 3, in which the plasma may be supplied in a continuous mode, in which the plasma may not be supplied in pulses.

TABLE 1 Experimental conditions of an example

Fig. 6 shows the film stress according to the cycle ratio of the first step and the second step. In FIG. 6, SiO formed at room temperature by conventional processing₂Film (in which a Si-containing precursor and an oxygen plasma are alternately and sequentially supplied to form SiO₂Film) may have a tensile stress of 109.8MPa, but SiO according to the inventive concept₂The film stress may vary according to the cycle ratio of the first step and the second step.

In a first step, a Si-containing precursor as a first reactant and an argon plasma as a second reactant may be alternately and sequentially provided to a substrate to form a first film composed of fragments of elements and/or ligands of the dissociated Si precursor.

In the second step, oxygen plasma as a third reactant may be supplied to the first film to convert the first film into SiO as a second film₂And (3) a membrane. In an embodiment, the cycle ratio of the first step to the second step may be 50. For example, the first step may be 50 cycles, and the second step may be one cycle. In another embodiment, the cycle ratio of the first step to the second step may be 100. For example, the first step may be 100 cycles, and the second step may be one cycle.

Fig. 7 shows the film composition after the first step and the second step are performed. As shown in FIG. 7, SiO is formed at the cycling ratios of the 50:1 and 100:1 conditions of FIG. 6₂Films such as SiO with stoichiometry₂The film composition, and no other elements from fragments of nitrogen, carbon and hydrogen or mixtures thereof. This means that the first film can be substantially converted to the second film by an oxygen plasma as a third reactant.

As shown in fig. 6, the film stress of the first film has a compressive stress of-74.8 MPa, but since the oxygen plasma is provided and the first film is converted into the second film, the film stress is converted into a tensile stress. In addition, the higher the cycle ratio of step 1 to step 2, the higher the SiO₂The higher the tensile stress of the film. That is, the first step and the second step can be controlledCycle ratio of the step to properly adjust SiO₂The film stress. Therefore, it is possible to set an optimum process condition or recycle ratio to prevent substrate deformation and film peeling such as warpage, cracks, and the like. Therefore, a film having a target stress can be formed by controlling the cycle ratio.

In another embodiment, the treatment may be performed to introduce a stress control film. For example, if the substrate is processed at high temperature in a reactor, subjected to compressive or tensile stress, the substrate may be deformed or cracked, or film peeling or cracks may occur therein. In this case, a stress control film may be introduced to the back surface of the substrate to counteract compressive or tensile stress of the substrate. The stress control film may be a film having compressive stress or tensile stress formed by the method according to fig. 2 and 3 described above before processing the substrate. That is, the stress of the stress control film may offset the stress of the substrate by adjusting the cycle ratio of the source coating step and the plasma treatment step. Accordingly, the stress control film can suppress substrate deformation and cracks in the film on the substrate during processing of the substrate at high temperature. Fig. 8 shows a process flow for introducing a stress control film.

In fig. 8, a first film may be formed on the back surface of the substrate by supplying a first reactant and a second reactant in a first step. The first membrane may then be converted to a second membrane by supplying a third reactant in a second step. The stress of the second film, which may be used as a stress control film, may be adjusted by controlling the cycle ratio of the first step and the second step. The processing sequence is described in more detail in fig. 2 and 3, and thus a detailed description thereof is omitted here. Then, a third film may be formed on the front surface of the substrate. After the treatment is completed, it may be passed through a fluorine-containing etchant such as CF₄The stress control film, i.e., the second film, is removed. By performing this process, deformation or breakage of the substrate and cracks or damage in the third film can be suppressed.

The process of fig. 8 may be performed ex situ. For example, the treatment may be carried out in a chamber having a plurality of reactors therein. For example, the substrate may be processed by sequentially transferring between the respective reactors to perform each step of fig. 8.

Fig. 9 shows the embodiment of fig. 8. In fig. 9A, a second film or stress control film 2 may be formed on the back surface of the substrate 1 at a low temperature, for example, at room temperature. Then, the target third film 3 may be formed on the front surface of the substrate 1 at a high temperature. The stress of the substrate can be offset by introducing a stress control film having a compressive stress or a tensile stress to the back surface of the substrate 1.

In fig. 9A, the tensile stress of the substrate can be canceled by forming the stress control film 2 having a compressive stress on the back surface of the substrate 1, and thus the deformation or breakage of the substrate or the crack in the third film 3 on the substrate can be suppressed.

In fig. 9B, the compressive stress of the substrate can be offset by forming the stress control film 2 having a tensile stress on the back surface of the substrate 1, and thus the deformation or breakage of the substrate or the crack in the third film 3 on the substrate can be suppressed.

Controlling film stress by converting one film to another at low temperatures provides another technical advantage. SiO 2₂The hard mask may be used for patterning processes in semiconductor device fabrication. However, as the device shrinks, the film thickness on the device becomes thinner and thermal budget becomes a serious problem because it can cause sub-layer damage, abnormal migration of electrons across the device structure, and failure of the device. Thus, it may be desirable to perform SiO at low temperatures₂A hard mask process having the same film properties as those formed under the existing high temperature process. Thus, the inventive concept according to the present invention may provide a solution thereto.

FIG. 10 illustrates a process flow for forming a hard mask over a pattern of a substrate according to another embodiment.

In a first step 101 of fig. 10, a substrate having a pattern structure may be loaded onto a substrate support. In a second step 301 of fig. 10, a first film may be formed on a pattern of a substrate. The first film may be formed according to the aforementioned method in fig. 2 and 3, and thus a detailed description will be omitted herein. After the second step 301, the first film may be converted into a second film in a third step 501. The first film may be converted into the second film according to the aforementioned method in fig. 2 and 3, and thus a detailed description will be omitted herein.

FIG. 11 illustrates SiO formed according to FIG. 10 and prior art methods₂Wet Etch Rate (WER) of the film. The wet etch rate was performed in hydrofluoric acid (HF) diluted in deionized water (DIW) at a ratio of 100: 1.

In fig. 11, details of each process condition are described below.

-A: formation of SiO by conventional PEALD method at 50 deg.C₂A film in which a DIPAS (diisopropylaminosilane) precursor and an oxygen plasma may be alternately and sequentially provided.

-B: and depositing the precursor. By alternately and sequentially supplying the DIPAS silicon precursor and Ar plasma, a Si-containing film can be formed at 50 ℃.

-C: formation of SiO at 50 ℃ by performing 50 cycles of alternately and sequentially supplying DIPAS precursor and Ar plasma and one cycle of oxygen plasma₂Film to convert to SiO₂And (3) a membrane.

-D: formation of SiO by conventional PEALD method at 300 deg.C for hardmask applications₂A film in which a DIPAS precursor and an oxygen plasma can be provided alternately and sequentially.

SiO formed by conventional PEAL method at 50 deg.C, as shown in A of FIG. 11₂The wet etching rate of the film is high asIn other words, the wet etching resistance is low. However, under B conditions, the Si-containing film formed at 50 ℃ by providing DIPAS precursor and Ar plasma had very low WER, in other words, high wet etch resistance. But as shown by C, oxygen treatment at 50 ℃ and final conversion of Si-containing films to SiO₂The film increased the WER to approximately that of the SiO formed at 300 deg.C as shown in Condition D₂WER of the film. In another embodiment, SiO is formed at 50 deg.C₂The film can be formed at 300 ℃ or above by further controlling the cycle ratio of the first step and the second step₂The films were almost identical. In other words, by adjusting the cycle ratio of the precursor deposition step and the plasma treatment step, the plasma treatment can be performed in a single cycleTo achieve film properties at low temperatures that can be achieved at high temperatures, e.g., 300 c or above, thereby reducing the thermal budget of the device. Thus, the inventive concept of the present invention may provide a solution to the requirements of low temperature processing. Fig. 11 also shows that films with different wet etch rates can be achieved at low temperatures by adjusting the cycling ratio of the precursor deposition step and the plasma treatment step, and this can make various applications available.

Controlling film stress by converting one film to another can provide another technical advantage in the gap filling process. In fig. 12, the film 1 covering the top surface may be peeled off due to a film stress such as a tensile stress as shown in fig. 12A. But introducing a stress control film to the top surface of the film can inhibit film peeling, as shown in fig. 12B.

In fig. 12B, the gap is filled with the first film 1, and the second film or the stress control film 2 may be formed by providing the first reactant and the second reactant activated by plasma in the first step, and the second film may be converted into the third film 3 in the second step. The stress of the third film 3 can be adjusted by controlling the cycle ratio of the first step and the second cycle. Details of this process are mentioned in fig. 2 and 3, and thus a detailed description thereof will be omitted here.

Fig. 13 illustrates the process flow of fig. 12, wherein a substrate with a gap structure may be loaded in step 101, and then the gap is filled with a first film in step 301. A second film may be formed on the first film at step 501 and then converted to a third film at step 701.