阅读说明：本技术 一种使用缓冲层增强太阳光对金属薄膜磁性调控的方法 (Method for enhancing magnetic regulation and control of sunlight on metal film by using buffer layer ) 是由 刘明 周子尧 胡忠强 赵一凡 赵梦 于 2020-03-31 设计创作，主要内容包括：一种使用缓冲层增强太阳光对金属薄膜磁性调控的方法,包括以下步骤：步骤1,薄膜的制备；步骤2,旋涂/沉积缓冲层；步骤3,光伏活性层的旋涂：将选定的光伏活性层旋涂在缓冲层上；步骤4,生长电极：制备器件顶电极；步骤5,使用太阳光进行调控。本发明采用的插入缓冲层增加太阳光调控金属薄膜的调控量的方法,适用于其他可见光源,太阳光属于可再生能源极大地降低了能耗、成本,调控量的增大为实际应用提供了可能。(A method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer comprises the following steps: step 1, preparing a film; step 2, spin coating/depositing a buffer layer; step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer; step 4, growing an electrode: preparing a top electrode of the device; and 5, regulating and controlling by using sunlight. The method for increasing the regulation and control quantity of the sunlight regulation and control metal film by inserting the buffer layer is suitable for other visible light sources, the sunlight belongs to renewable energy sources, the energy consumption and the cost are greatly reduced, and the increase of the regulation and control quantity provides possibility for practical application.)

1. A method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer is characterized by comprising the following steps:

step 1, preparing a film: obtaining a metal film layer on a substrate by using a film deposition method;

step 2, spin coating/depositing a buffer layer: selecting a cathode buffer layer which is favorable for transmitting electrons/blocking holes to spin-coat or deposit on the metal film to form a test structure with a multilayer structure;

step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer;

step 4, growing an electrode: preparing a top electrode of the device;

and 5, regulating and controlling by using sunlight.

2. The method for enhancing the magnetic control of sunlight on a metal film by using the buffer layer as claimed in claim 1, wherein the substrate in the step 1 is: one of silicon, silica or mica; the film structure is as follows: Co/Ta/substrate or CoFe/Ta/substrate, wherein the thickness of CoFe is 1.1nm or 1.2nm, the thickness of Co is 0.9nm or 1nm, and the thickness of Ta is 4 nm; CoFe or Co can be replaced with FeCoB or NiFe.

3. The method for enhancing the magnetic control of sunlight on a metal film by using the buffer layer as claimed in claim 1, wherein in the step 1, the substrate to be used needs to be immersed in acetone with the concentration of 99% for cleaning for 10min in an ultrasonic oscillator with the power of 90 w; then immersing the substrate in 99% alcohol in an ultrasonic oscillator with power of 90w for cleaning for 10 min; finally, the glass is immersed in deionized water in an ultrasonic oscillator with power of 90w for cleaning for 10min and dried by using an air gun.

4. The method for enhancing the magnetic control of sunlight on a metal thin film by using the buffer layer as claimed in claim 1, wherein the buffer layer in the step 2 is made of one of ZnO, Ba, L iF or Ca.

5. The method for enhancing the magnetic regulation and control of the metal film by the sunlight through the buffer layer according to claim 1, wherein in the step 2, the solution is spin-coated, 15 mu L of the solution is taken, spin-coating is carried out at 2000rpm of a spin coater to obtain the buffer layer, and the solid is obtained into the film with the thickness of 3nm to 10nm through magnetron sputtering.

6. The method for enhancing the magnetic control of sunlight on a metal film by using the buffer layer as claimed in claim 1, wherein in the step 3, the photovoltaic active layer is one of P3HT: PC61BM, PTB7-Th: PC71BM, P-DTS (FBTTH2)2: PC71BM: PTB 7-Th; spin coating speed: 1500rpm, the thickness of the photovoltaic active layer is 70 nm; the sample with the photovoltaic active layer coated thereon is left to stand for 10 to 15 hours to be uniform and dried.

7. The method for enhancing the magnetic control of sunlight on a metal thin film by using the buffer layer as claimed in claim 1, wherein in the step 4, one of Pt or Au is used as the top electrode material; the electrode was prepared using a magnetron sputtering method.

8. The method for enhancing the magnetic regulation and control of the solar light on the metal thin film by using the buffer layer as claimed in claim 1, wherein in the step 5, the regulation and control is performed by using a simulated solar light lamp or other visible light.

Technical Field

The invention belongs to the technical field of magnetic regulation and control, and particularly relates to a method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer.

Background

The existing technology for regulating and controlling the ferromagnetic resonance field of the metal film is generally realized by means of a magnetic field generated by current, applied voltage and high-energy light beams. The current generated magnetic field is high in regulation and control energy consumption and large in size, is difficult to be compatible with a miniaturized device, generates joule heat to damage the device, and the temperature of the device can possibly rise to the Curie temperature of a ferromagnetic material, so that the device cannot work. The applied voltage is regulated and controlled by using strain as a medium through a piezoelectric material (such as PMN-PT), the voltage is high, the integration difficulty is high, and the energy consumption is high; the small voltage is applied and regulated by the ionic liquid, chemical reaction is generated, and the device is corroded. High energy beams (e.g., laser, pulsed, polarized) can generate large amounts of heat that can destabilize the device, affect adjacent magnetic domains for the memory device, and affect accuracy.

Sunlight is a renewable energy source which is concerned about, the regulation and control of the magnetism of the metal film by utilizing visible light such as sunlight and the like is a purely physical method, low energy consumption can be realized, the device cannot be corroded, and the device can be compatible with miniaturization of the device.

At present, a ferromagnetic resonance field of a sunlight-regulated metal film utilizes the relevant principle of an organic solar cell, visible light irradiates a luminescent layer to generate electrons, the electrons enter a metal film layer to occupy unpaired orbital energy level, the Fermi energy level is changed to further change the magnetism, and the problems of scattering, dissipation, too small difference of work functions of a cathode and an anode and the like exist, so that the number of the electrons entering the metal film layer is too small, the regulation amount is too small, and the regulation amount is urgently needed to be increased to pave a way for practical application.

Disclosure of Invention

The invention aims to provide a method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer so as to solve the problems.

In order to achieve the purpose, the invention adopts the following technical scheme:

a method for enhancing the magnetic regulation and control of sunlight on a metal film by using a buffer layer comprises the following steps:

step 1, preparing a film: obtaining a metal film layer on a substrate by using a film deposition method;

step 2, spin coating/depositing a buffer layer: selecting a cathode buffer layer which is favorable for transmitting electrons/blocking holes to spin-coat or deposit on the metal film to form a test structure with a multilayer structure;

step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer;

step 4, growing an electrode: preparing a top electrode of the device;

and 5, regulating and controlling by using sunlight.

Further, in step 1, the substrate is: one of silicon, silica or mica; the film structure is as follows: Co/Ta/substrate or CoFe/Ta/substrate, wherein the thickness of CoFe is 1.1nm or 1.2nm, the thickness of Co is 0.9nm or 1nm, and the thickness of Ta is 4 nm; CoFe or Co can be replaced with FeCoB or NiFe.

Further, in step 1, the substrate to be used needs to be immersed in 99% acetone for cleaning for 10min in an ultrasonic oscillator with power of 90 w; then immersing the substrate in 99% alcohol in an ultrasonic oscillator with power of 90w for cleaning for 10 min; finally, the glass is immersed in deionized water in an ultrasonic oscillator with power of 90w for cleaning for 10min and dried by using an air gun.

Furthermore, in the step 2, the buffer layer material is one of ZnO, Ba, L iF or Ca.

Further, in the step 2, the solution is spin-coated, 15 mu L of the solution is taken, spin-coating is carried out by using a spin coater at 2000rpm to obtain a buffer layer, and the solid is magnetron sputtered to obtain a film with the thickness of 3nm to 10 nm.

Further, in the step 3, the photovoltaic active layer is one of P3HT, PC61BM, PTB7-Th, PC71BM, P-DTS (FBTTH2)2, PC71BM, PTB 7-Th; spin coating speed: 1500rpm, the thickness of the photovoltaic active layer is 70 nm; and (3) placing the sample on which the photovoltaic active layer is coated for 10-15 hours to make the sample uniform and dry.

Further, in step 4, one of Pt or Au as the top electrode material; the electrode was prepared using a magnetron sputtering method.

Further, in step 5, a simulated sunlight lamp or other visible light is used for regulation and control.

Compared with the prior art, the invention has the following technical effects:

the method for increasing the regulation and control quantity of the sunlight regulation and control metal film is suitable for other visible light sources, the sunlight belongs to renewable energy sources, the energy consumption and the cost are greatly reduced, the increase of the regulation and control quantity provides possibility for practical application, and meanwhile, the regulation and control device is simple and easy to integrate and can be compatible with the existing miniaturized device. In addition, the method has the advantages of simple process, easy operation and excellent regulation effect.

The cathode buffer layer is inserted into the spin electronic device regulated by sunlight to enable more electrons to enter the metal film layer, and the regulation amount of the ferromagnetic resonance field is increased.

Drawings

FIG. 1 is a diagram of the device structure of the present invention;

FIG. 2 is a graph of experimental data for a control group of the present invention;

FIG. 3 is a graph of experimental data for the present invention;

FIG. 4 is a graph comparing experimental data of the control group and the experimental group.

Detailed Description

The invention is further described below with reference to the accompanying drawings:

referring to fig. 1 to 4, a method for enhancing the magnetic control of sunlight on a metal film by using a buffer layer includes the following steps:

step 1, preparing a film: obtaining a metal film layer on a substrate by using a film deposition method;

step 2, spin coating/depositing a buffer layer: selecting a cathode buffer layer which is favorable for transmitting electrons/blocking holes to spin-coat or deposit on the metal film to form a test structure with a multilayer structure; the function of the film is to make more electrons enter the metal film layer and reduce energy dissipation to improve the photoelectric conversion efficiency.

Step 3, spin coating of the photovoltaic active layer: spin coating the selected photovoltaic active layer on the buffer layer;

step 4, growing an electrode: preparing a top electrode of the device;

and 5, regulating and controlling by using sunlight.

The substrate in step 1 is: one of silicon, silica or mica; the film structure is as follows: Co/Ta/substrate or CoFe/Ta/substrate, wherein the thickness of CoFe is 1.1nm or 1.2nm, the thickness of Co is 0.9nm or 1nm, and the thickness of Ta is 4 nm; CoFe or Co can be replaced with FeCoB or NiFe.

In the step 1, the used substrate needs to be immersed in 99% acetone in an ultrasonic oscillator with power of 90w for cleaning for 10 min; then immersing the substrate in 99% alcohol in an ultrasonic oscillator with power of 90w for cleaning for 10 min; finally, the glass is immersed in deionized water in an ultrasonic oscillator with power of 90w for cleaning for 10min and dried by using an air gun.

The buffer layer material in the step 2 is one of ZnO, Ba, L iF or Ca, and the material is characterized by being capable of transmitting electrons to enable more electrons to enter the metal film layer, blocking holes, reducing the recombination of hole electrons, improving the surface appearance of the photovoltaic active layer and the metal film material, reducing dissipation, increasing photoelectric conversion efficiency and generating more photoelectrons.

In the step 2, the solution is spin-coated, 15 mu L of the solution is taken, spin-coating is carried out by using a spin coater at 2000rpm to obtain a buffer layer, and the solid is subjected to magnetron sputtering to obtain a 3nm film.

In the step 3, the photovoltaic active layer is one of P3HT, PC61BM, PTB7-Th, PC71BM, P-DTS (FBTTH2)2, PC71BM and PTB 7-Th; spin coating speed: 1500rpm, the thickness of the photovoltaic active layer is 70 nm; the sample spin-coated with the photovoltaic active layer was left to stand for 10 hours to be uniform and dried.

In step 4, one of Pt or Au is taken as a top electrode material; the electrode was prepared using a magnetron sputtering method.

And 5, regulating and controlling by using a simulated sunlight lamp or other visible lights.