Semiconductor structure and motor driving device
阅读说明:本技术 半导体结构及电机驱动装置 (Semiconductor structure and motor driving device ) 是由 余梦霖 肖金玉 郭守誉 于 2018-09-05 设计创作,主要内容包括:本发明涉及一种半导体结构,包括:衬底,具有第一导电类型;第一区域,形成于衬底上,包含第一阱区以及从第一阱区引出的电极,第一阱区具有第二导电类型;第二区域,形成于衬底上,包含第二阱区以及从第二阱区引出的电极,第二阱区具有第二导电类型;隔离结构,形成于衬底上且位于第一区域与第二区域之间以隔离第一阱区与第二阱区;隔离结构包括2M+1个阱区以及从2M+1个阱区中各阱区引出的电极,第一阱区、第二阱区和2M+1个阱区并排设置且相邻阱区的导电类型相反,M大于或等于1。通过在隔离结构中设置多个阱区,可以吸收三极管的绝大部分电子,隔离效果较好。本发明还涉及一种电机驱动装置,该电机驱动装置形成于上述半导体结构中。(The invention relates to a semiconductor structure, comprising: a substrate having a first conductivity type; a first region formed on the substrate and including a first well region having a second conductivity type and an electrode led out from the first well region; a second region formed on the substrate and including a second well region having a second conductivity type and an electrode led out from the second well region; the isolation structure is formed on the substrate and positioned between the first region and the second region to isolate the first well region and the second well region; the isolation structure comprises 2M +1 well regions and electrodes led out from the well regions in the 2M +1 well regions, the first well region, the second well region and the 2M +1 well regions are arranged side by side, the conduction types of the adjacent well regions are opposite, and M is larger than or equal to 1. Through set up a plurality of well regions in isolation structure, can absorb the overwhelming majority electron of triode, it is better to keep apart the effect. The invention also relates to a motor driving device which is formed in the semiconductor structure.)
1. A semiconductor structure, comprising:
a substrate having a first conductivity type;
a first region formed on the substrate and including a first well region and an electrode led out from the first well region, the first well region having a second conductivity type;
a second region formed on the substrate and including a second well region and an electrode led out from the second well region, the second well region having a second conductivity type;
the isolation structure is formed on the substrate and positioned between the first region and the second region so as to isolate the first well region and the second well region;
the isolation structure is characterized by comprising 2M +1 well regions and electrodes led out from the well regions in the 2M +1 well regions, wherein the first well region, the second well region and the 2M +1 well regions are arranged side by side, the conduction types of the adjacent well regions are opposite, and M is greater than or equal to 1.
2. The semiconductor structure of claim 1, wherein the first conductivity type is P-type and the second conductivity type is N-type, the P-well electrode in the isolation structure is grounded, and the N-well electrode in the isolation structure is connected to a positive voltage.
3. The semiconductor structure of claim 2, wherein the isolation structure comprises 3 well regions, respectively a P-well, an N-well, and a P-well.
4. The semiconductor structure of claim 2, wherein the isolation structure comprises 5 well regions, which are a P-well, an N-well, and a P-well, respectively.
5. The semiconductor structure of claim 1, wherein a buried layer is formed between the well region in the isolation structure and the substrate, the buried layer between the N-well in the isolation structure and the substrate is an N-type buried layer, and the P-well in the isolation structure and the buried layer of the substrate are P-type buried layers.
6. The semiconductor structure of claim 1, wherein a shallow junction is formed in each well region in the isolation structure, wherein a doping concentration of the shallow junction is greater than a concentration of a well region in which the shallow junction is located, and wherein each well region in the isolation structure leads out an electrode from the shallow junction.
7. The semiconductor structure of claim 1, wherein the isolation structure is a ring structure, the first region being located inside the ring structure, the second region being located outside the ring structure.
8. The semiconductor structure of claim 7, wherein a width of the well region in the ring structure at the bend increases.
9. The semiconductor structure of claim 7, wherein the first conductivity type is P-type, the second conductivity type is N-type, and an innermost N-well width in the ring structure is greater than or equal to 10 μ ι η.
10. A motor driving device, comprising a first switch tube and a second switch tube, and a first control unit for controlling the first switch tube and a second control unit for controlling the second switch tube, wherein the first switch tube and the second switch tube are connected and the connection end is used as the output end of the driving device to output PWM signal, the first control unit and the second control unit are integrated in the same semiconductor structure, the semiconductor structure is the semiconductor structure of any one of claims 1 to 9, the first region of the semiconductor structure forms the first control unit, and the second region of the semiconductor structure forms the second control unit.
Technical Field
The present invention relates to the field of semiconductors, and in particular, to a semiconductor structure and a motor driving apparatus.
Background
The conventional semiconductor structure usually integrates a plurality of regions, when the well region of the first region is adjacent to the well region of the second region and the conductivity type is the same, an isolation structure is usually arranged between the adjacent well regions to isolate the well regions, and when voltage is applied to the two adjacent well regions, the isolation structure can prevent the two adjacent well regions from being conducted to generate current, so that the two adjacent well regions interfere with each other and the semiconductor device is disordered in work. Currently, the isolation structure is generally a well region with a conductivity type opposite to that of an adjacent well region, and is isolated by forming a PN junction. However, the well region and two adjacent well regions in the isolation structure actually form a parasitic triode, the well region in the isolation structure is equivalent to the base region of the triode, the well regions on the two sides are equivalent to the collector region and the emitter region of the triode, when the voltage on the triple well region meets the conduction condition of the triode, namely the emitter region is forward biased, the collector region is reverse biased, the parasitic triode is conducted, and current is generated between the first region and the second region, so that the first region and the second region are not controlled, and the semiconductor device is disordered in work. Especially, when the semiconductor structure is used for controlling the two switching tubes to work to generate PWM signals, the two switching tubes can be conducted at the same time to damage the switching tubes.
Disclosure of Invention
Therefore, it is necessary to provide a new semiconductor structure to solve the problem that the isolation structure in the conventional semiconductor structure is easily broken down to turn on the two side regions to generate the interference current.
A semiconductor structure, comprising:
a substrate having a first conductivity type;
a first region formed on the substrate and including a first well region and an electrode led out from the first well region, the first well region having a second conductivity type;
a second region formed on the substrate and including a second well region and an electrode led out from the second well region, the second well region having a second conductivity type;
the isolation structure is formed on the substrate and positioned between the first region and the second region so as to isolate the first well region and the second well region;
the isolation structure comprises 2M +1 well regions and electrodes led out from the well regions in the 2M +1 well regions, the first well region, the second well region and the 2M +1 well regions are arranged side by side, the conduction types of the adjacent well regions are opposite, and M is larger than or equal to 1.
Above-mentioned semiconductor structure is provided with isolation structure between first well region and second well region, and this isolation structure includes 2M +1 well regions, and M is more than or equal to 1, and the 2M +1 well regions of first well region, second well region and isolation structure set up side by side and adjacent well region's electrically conductive type is opposite, and isolation structure and first well region, second well region form 2 at least parasitic triodes, exist the collecting electrode promptly in isolation structure. When the voltage applied to each well region accords with the conduction condition of the triode, the collector electrode of the isolation structure can absorb most electrons generated in the first well region, and only a very small amount of electrons can reach the second well region, so that the problem that the second region generates interference current to cause the semiconductor structure to work disorderly is effectively avoided.
In one embodiment, the first conductivity type is P-type, the second conductivity type is N-type, the P-well electrode in the isolation structure is grounded, and the N-well electrode in the isolation structure is connected to a positive voltage.
In one embodiment, the isolation structure includes 3 well regions, which are a P-well, an N-well, and a P-well.
In one embodiment, the isolation structure includes 5 well regions, which are a P-well, an N-well, and a P-well, respectively.
In one embodiment, a buried layer is formed between the well region in the isolation structure and the substrate, the buried layer between the N-well in the isolation structure and the substrate is an N-type buried layer, and the P-well in the isolation structure and the buried layer of the substrate are P-type buried layers.
In one embodiment, a shallow junction is formed in each well region in the isolation structure, the doping concentration of the shallow junction is greater than that of the well region where the shallow junction is located, and each well region in the isolation structure leads out an electrode from the shallow junction.
In one embodiment, the isolation structure is an annular structure, the first region is located inside the annular structure, and the second region is located outside the annular structure.
In one embodiment, the width of the well region in the annular structure at the bend is increased.
In one embodiment, the first conductivity type is P-type, the second conductivity type is N-type, and an innermost N-well width of the ring structure is greater than or equal to 10 μm.
The invention also discloses a motor driving device, which comprises a first switching tube, a second switching tube, a first control unit and a second control unit, wherein the first control unit is used for controlling the first switching tube, the second control unit is used for controlling the second switching tube, the first switching tube is connected with the second switching tube, the connecting end of the first switching tube and the second switching tube is used as the output end of the motor driving device to output PWM signals, the first control unit and the second control unit are integrated in the same semiconductor structure, the semiconductor structure is the semiconductor structure, the first control unit is formed in the first area of the semiconductor structure, and the second control unit is formed in the second area of the semiconductor structure.
According to the motor driving device, the first control unit and the second control unit are integrated in the semiconductor structure, so that the phenomenon that the first control unit and the second control unit interfere with each other to disturb the working time sequence of the first control unit and the second control unit can be effectively avoided, and the phenomenon that the first switch tube and the second switch tube are simultaneously conducted to burn the switch tube is avoided.
Drawings
FIG. 1 is a cross-sectional view of a semiconductor structure in accordance with one embodiment;
FIG. 2 is an electron flow diagram of an isolation structure including only one well region;
FIG. 3 is an electron flow diagram illustrating the conduction of a parasitic transistor according to an embodiment;
FIG. 4 is an equivalent circuit diagram of the parasitic transistor of FIG. 3;
FIG. 5 is an electron flow diagram illustrating the conduction of a parasitic transistor in another embodiment;
FIG. 6 is a cross-sectional view of a semiconductor structure in yet another embodiment;
FIG. 7 is a semiconductor structure layout according to an embodiment;
FIG. 8 is a schematic view of a motor drive;
FIG. 9 is a circuit diagram of a motor driving apparatus according to an embodiment.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, the semiconductor structure includes a
Because the first well region and the second well region have the same conduction type, an isolation structure is arranged between the first well region and the second well region for isolating the first well region and the second well region so as to improve withstand voltage. If only one well region is arranged in the isolation structure, the well region, the first well region and the second well region form a parasitic triode, when the voltage connected with the electrodes of each well region meets the triode conduction condition, namely the positive bias of an emitting electrode and the reverse bias of a collecting electrode are met, the parasitic triode is conducted, and conduction electron current occurs between the first well region and the second well region. As shown in fig. 2, if the semiconductor substrate is a P-type substrate, the first well region is a first N well, the second well region is a second N well, and the isolation structure is a P well, a parasitic NPN transistor is formed, wherein the P-type substrate and the P well in the isolation structure form a base of the parasitic NPN transistor, when an electrode VB led out from the first N well is connected to a negative voltage, such as-5V, and an electrode VCC led out from the second N well is connected to a positive voltage, such as 15V, and an electrode led out from the P well of the isolation structure is grounded, the first N well is an emitter of the parasitic transistor, the second N well is a collector of the parasitic transistor, and at this time, voltages applied to the parasitic transistor satisfy that the emitter is forward biased, the collector is reverse biased, the parasitic transistor NPN is turned on, and a conduction electron flow occurs between the first N well and the second N well (as shown by a dotted arrow in fig. 2.
In a general power device, the first well region and the second well region have respective independent functions, and mutual interference between the two well regions needs to be avoided. Taking a semiconductor structure as an example of a motor driving device, as shown in fig. 8 and 9, a motor system includes a motor driving device and a motor, the motor driving device includes a first switch Q1 and a second switch Q2, and a
In the scheme, the isolation structure arranged between the first well region and the second well region is provided with 2M +1 well regions, and M is greater than or equal to 1. In an embodiment, the first conductivity type is P-type, the second conductivity type is N-type, that is, the semiconductor substrate is a P-type substrate, the first well region is a first N-well, the second well region is a second N-well, and the isolation structure includes M + 1N-wells and M P-wells, wherein M + 1P-wells in the isolation structure are all grounded, and M N-wells in the isolation structure are all connected to a positive voltage. Taking M ═ 1 as an example, as shown in fig. 3, the isolation structure includes 3 well regions, which are the first
In another embodiment, the
In one embodiment, as shown in fig. 6, in order to improve the device withstand voltage, a buried layer 140 is further formed between the
In one embodiment, as shown in fig. 7, the
Above-mentioned semiconductor structure, through set up isolation structure in the middle of first region and second region and be formed with a plurality of well regions in isolation structure, first region, the second region forms a plurality of parasitic triodes with isolation structure and has the collecting electrode of parasitic triode in isolation structure inside, when parasitic triode switches on, the collecting electrode in the accessible isolation structure absorbs most electron flow, only few electron circulates each other between first region and the second region, consequently first region and the regional mutual noninterference of second, isolation structure's isolation effect is better in this scheme.
The invention also discloses a motor driving device, as shown in fig. 8, the motor driving device comprises a first switch tube Q1 and a second switch tube Q2, and further comprises a
In a specific embodiment, a circuit diagram of the motor driving apparatus is shown in fig. 9, wherein the first control unit 210 outputs the electrode VB corresponding to the first well region output electrode VB in the semiconductor structure, the second control unit 220 outputs the electrode VCC corresponding to the second well region output electrode VCC in the semiconductor structure, the first switch tube and the second switch tube are alternately conducted to output the PWM signal under normal conditions, VCC and VB are both connected to a positive voltage, but in the motor dead zone time sequence, that is, when the first switch tube and the second switch tube are both closed, because the motor inductance is large, even if the first switch tube and the second switch tube are both closed, the motor current will not immediately become 0, and will continue to maintain the original current within a certain time, that is, the inductance will pull the current from the second switch tube to maintain the original current, so that the voltage of the VS terminal in the circuit diagram is negative, and the VS terminal is connected to the VB terminal through the bootstrap capacitor, when VS decreases to a negative value, VB also decreases to a negative value, such as-5V, and when the isolation structure has only one P-well and the P-well is grounded, the NPN parasitic transistor will turn on as described above. The parasitic triode is conducted, the second well region receives the electron current brought by the first well region, the working state of the second well region receives interference, if the control time sequence of the second control unit changes, the second switch tube controlled by the second control unit may be changed from the off state to the on state, at the moment, if the first switch tube is also in the on state, the two switch tubes are all conducted, and the switch tube is burnt due to the fact that the current is large. This scheme is through setting up the isolation structure of many well regions, and isolation structure can absorb the electron current of parasitic triode, only very few electron flow in the second well region from first well region, and the very few electron that flows in the second well region can not cause the interference to the operating condition in second region, consequently adds this isolation structure after, first control unit and second control unit's isolation effect is better. The semiconductor structure including the isolation structure is described in detail above, and is not described herein again.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples only show some embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
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