Chemical water bath deposition device
阅读说明:本技术 一种化学水浴沉积装置 (Chemical water bath deposition device ) 是由 张冲 王雪戈 于 2018-09-07 设计创作,主要内容包括:本发明提供一种化学水浴沉积装置,包括:水浴锅;加热丝,环绕水浴锅的内侧壁设置或环绕水浴锅的内侧壁和底部设置。可见,本发明实施例将加热丝的加热方式由底部加热方式改进为了四周环形加热方式,或在加热丝的现有加热方式的基础上增加了四周环形加热方式,这样一方面能够增大加热面积,另一方面能够保证水浴锅的不同高度处的温度均匀性。由于加热面积的增大,本发明实施例中的水浴加热速度能够得到提升,这样能够提高薄膜沉积效率。由于不同高度处的温度均匀性得到保证,本发明实施例能够避免不同高度处的温差过大而对薄膜沉积过程造成不良的影响,以为薄膜材料的沉积创造一个更良好的外部水浴环境,从而提高沉积的薄膜质量。(The invention provides a chemical water bath deposition device, which comprises: a water bath kettle; the heating wire is arranged around the inner side wall of the water bath kettle or arranged around the inner side wall and the bottom of the water bath kettle. Therefore, the embodiment of the invention improves the heating mode of the heating wire from the bottom heating mode to the peripheral annular heating mode, or adds the peripheral annular heating mode on the basis of the existing heating mode of the heating wire, so that the heating area can be increased on one hand, and the temperature uniformity of different heights of the water bath can be ensured on the other hand. Due to the increase of the heating area, the water bath heating speed in the embodiment of the invention can be improved, so that the film deposition efficiency can be improved. Because the temperature uniformity at different heights is ensured, the embodiment of the invention can avoid the adverse effect on the film deposition process caused by overlarge temperature difference at different heights, and create a better external water bath environment for the deposition of the film material, thereby improving the quality of the deposited film.)
1. A chemical water bath deposition apparatus, comprising:
a water bath kettle;
the heating wire is arranged around the inner side wall of the water bath kettle; or the heating wires are arranged around the inner side wall and the bottom of the water bath kettle.
2. The chemical water bath deposition apparatus according to claim 1, further comprising:
the first stirring piece is rotatably arranged at the bottom of the water bath kettle and rotates in a working state.
3. The chemical bath deposition apparatus as claimed in claim 2,
the central area of the bottom of the water bath is provided with the first stirring piece; and/or the presence of a gas in the gas,
the non-central area of the bottom of the water bath is provided with one or more than one first stirring piece.
4. The deposition apparatus in chemical water bath according to claim 3, wherein, in the case that the non-central region of the bottom of the water bath is provided with one or more first stirring members, the one or more first stirring members are distributed in at least one of the following shapes relative to the central region of the bottom of the water bath:
radial, centrosymmetric, circular, elliptical, triangular, polygonal, cross-shaped, concentric square, concentric rectangle, concentric circle, concentric triangle, and other concentric polygons.
5. The chemical bath deposition apparatus as claimed in claim 2,
the bottom of the water bath kettle is provided with a first groove;
the first stirring piece is arranged in the first groove.
6. The chemical water bath deposition apparatus as claimed in claim 2, wherein the first stirring member comprises:
the main body is rotatably arranged at the bottom of the water bath kettle, and a first connecting part and a second connecting part are arranged at intervals along the circumferential direction of the outer circumferential surface of the main body;
the first fan blade is fixedly connected with the first connecting part;
the second fan blade is fixedly connected with the second connecting part.
7. The chemical water bath deposition apparatus according to claim 2, further comprising:
a first speed knob for adjusting a speed of rotation of the first stirring member.
8. The chemical water bath deposition apparatus according to claim 1, further comprising:
the magnetic submodule is rotationally arranged at the bottom of the water bath, and rotates under the working state to drive a magnetic stirrer in a sample container heated by the water bath of the water bath to rotate.
9. The chemical bath deposition apparatus as claimed in claim 8, wherein the magnetic sub-module is disposed at a central region of the bottom of the water bath.
10. The chemical bath deposition apparatus as claimed in claim 8,
the bottom of the water bath kettle is provided with a second groove;
the magnetic sub-module is arranged in the second groove.
11. The deposition apparatus in chemical water bath according to claim 8, wherein the magnetic sub-module is disposed at the bottom of the water bath kettle through a mounting shaft, and a second stirring member is further disposed on the mounting shaft, and the second stirring member rotates in an operating state.
12. The chemical water bath deposition apparatus according to claim 11, further comprising:
and the second rotating speed knob is used for adjusting the rotating speed of the magnetic sub-module and/or the second stirring piece.
13. The chemical water bath deposition apparatus according to claim 1, further comprising:
at least two temperature measuring elements, each temperature measuring element is used for measuring the temperature values of different positions in the water bath;
a display panel;
the controller is respectively electrically connected with the display panel and each temperature measuring element, and is used for acquiring the temperature value measured by each temperature measuring element and controlling the display panel to display temperature uniformity prompt information in the form of characters, numbers or patterns under the condition that the difference value of the temperature values measured by any two temperature measuring elements is smaller than a preset temperature difference threshold value.
14. The chemical water bath deposition apparatus according to claim 1, further comprising:
and the temperature control meter is used for setting heating parameters of the water bath kettle.
Technical Field
The invention relates to the technical field of thin film material preparation, in particular to a chemical water bath deposition device.
Background
At present, the use of thin film materials is becoming more common, and there are various preparation methods for thin film materials, such as magnetron sputtering method, screen printing method, thermal evaporation method, electrodeposition method, and Chemical Bath Deposition (CBD for short).
Among the above methods, the chemical water bath deposition method is widely favored by the scientific research and industrial industries because it is a non-vacuum preparation method and has the advantages of simple structure of the deposition device, low deposition temperature, low energy consumption, etc. However, the heating speed of the water bath in the current chemical water bath deposition device is very slow, the water bath usually needs to be heated for a very long time to reach the predetermined temperature, and meanwhile, the temperature distribution at different heights of the water bath is not uniform, which seriously affects the film deposition efficiency and quality.
Disclosure of Invention
The embodiment of the invention provides a chemical water bath deposition device, which can shorten the heating time of a water bath kettle in the chemical water bath deposition device, ensure the uniform temperature distribution of the water bath kettle at different heights and improve the quality of deposited films.
The embodiment of the invention provides a chemical water bath deposition device, which comprises:
a water bath kettle;
the heating wire is arranged around the inner side wall of the water bath kettle; or the heating wires are arranged around the inner side wall and the bottom of the water bath kettle.
Optionally, the chemical water bath deposition apparatus further comprises:
the first stirring piece is rotatably arranged at the bottom of the water bath kettle and rotates in a working state.
Optionally, the central region of the bottom of the water bath is provided with one first stirring piece; and/or the presence of a gas in the gas,
the non-central area of the bottom of the water bath is provided with one or more than one first stirring piece.
Optionally, in a case that the non-central region of the bottom of the water bath is provided with one or more first stirring members, the one or more first stirring members are distributed in at least one of the following shapes relative to the central region of the bottom of the water bath:
radial, centrosymmetric, circular, elliptical, triangular, polygonal, cross-shaped, concentric square, concentric rectangle, concentric circle, concentric triangle, and other concentric polygons.
Optionally, the bottom of the water bath is provided with a first groove;
the first stirring piece is arranged in the first groove.
Optionally, the first stirring member comprises:
the main body is rotatably arranged at the bottom of the water bath kettle, and a first connecting part and a second connecting part are arranged at intervals along the circumferential direction of the outer circumferential surface of the main body;
the first fan blade is fixedly connected with the first connecting part;
the second fan blade is fixedly connected with the second connecting part.
Optionally, the chemical water bath deposition apparatus further comprises:
a first speed knob for adjusting a speed of rotation of the first stirring member.
Optionally, the chemical water bath deposition apparatus further comprises:
the magnetic submodule is rotationally arranged at the bottom of the water bath, and rotates under the working state to drive a magnetic stirrer in a sample container heated by the water bath of the water bath to rotate.
Optionally, the magnet sub-module is disposed in a central region of a bottom of the water bath.
Optionally, a second groove is formed in the bottom of the water bath;
the magnetic sub-module is arranged in the second groove.
Optionally, the magnetic sub-module is arranged at the bottom of the water bath through an installation shaft, a second stirring piece is further arranged on the installation shaft, and the second stirring piece rotates in the working state.
Optionally, the chemical water bath deposition apparatus further comprises:
and the second rotating speed knob is used for adjusting the rotating speed of the magnetic sub-module and/or the second stirring piece.
Optionally, the chemical water bath deposition apparatus further comprises:
at least two temperature measuring elements, each temperature measuring element is used for measuring the temperature values of different positions in the water bath;
a display panel;
the controller is respectively electrically connected with the display panel and each temperature measuring element, and is used for acquiring the temperature value measured by each temperature measuring element and controlling the display panel to display temperature uniformity prompt information in the form of characters, numbers or patterns under the condition that the difference value of the temperature values measured by any two temperature measuring elements is smaller than a preset temperature difference threshold value.
Optionally, the chemical water bath deposition apparatus further comprises:
and the temperature control meter is used for setting heating parameters of the water bath kettle.
In the chemical water bath deposition device provided by the embodiment of the invention, the heating wire is arranged around the inner side wall of the water bath kettle; or the heating wires are arranged around the inner side wall and the bottom of the water bath kettle, and in the prior art, the heating wires are only arranged at the bottom of the water bath kettle. Due to the increase of the heating area, the water bath heating speed in the embodiment of the invention can be improved, so that the film deposition efficiency can be improved. Because the temperature uniformity at different heights is ensured, the embodiment of the invention can better avoid the adverse effect on the film deposition process caused by overlarge temperature difference at different heights, so that a better external water bath environment can be created for the deposition of film materials, and the quality of the deposited film is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of a chemical water bath deposition apparatus provided by an embodiment of the present invention at a viewing angle;
FIG. 2 is a schematic structural diagram of a chemical water bath deposition apparatus provided in an embodiment of the present invention from another view angle;
fig. 3 is a schematic structural diagram of a first stirring member in a chemical water bath deposition apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following is a description of the chemical water bath deposition apparatus provided by the embodiment of the present invention.
It should be noted that the chemical water bath deposition apparatus provided by the embodiment of the invention can be used for preparing important functional layer materials in thin film solar cells. In particular, the chemical water bath deposition device can be used for preparing window layer materials in CdTe (cadmium telluride) thin film solar cells; alternatively, the chemical water bath deposition device can be used for preparing buffer layer materials In a CIGS (copper indium gallium selenide) thin-film solar cell, such as CdS (cadmium sulfide), ZnS (zinc sulfide), ZnO (zinc oxide), ZnSe (zinc selenide), In2S3(indium sulfide), and the like.
The CIGS (copper indium gallium selenide) thin-film solar cell is a thin-film solar cell composed of four elements of Cu (copper), In (indium), Ga (gallium) and Se (selenium); CIGS thin-film solar cells may employ glass substrates, for example SLG (soda lime glass) substrates. In addition, CdS is a direct band gap II-VI compound semiconductor material, and the forbidden band width is about 2.42 eV.
Referring to fig. 1 and fig. 2, schematic structural diagrams of a chemical water bath deposition apparatus provided by an embodiment of the present invention are shown. As shown in fig. 1 and 2, the chemical water bath deposition apparatus includes: a water bath 1 and a
Specifically, the
Optionally, the chemical water bath deposition apparatus may further include a
It should be noted that the amount of the deionized water added into the water bath 1 is not too much, so that the ratio of the height of the area of the inner side wall of the water bath 1 where the
After the deionized water in the water bath 1 is heated to meet the requirement, the sample container 4 (e.g., beaker, reaction kettle or reactor, etc.) can be placed in the water bath 1 in a centered manner, the
It should be noted that, when the thin film material to be prepared is CdS, the solution prepared in the sample container 4 mainly consists of cadmium salt and CSN2H4(thiourea) and ammonia (which dissolves natural oxides generated during subsequent chemical reactions); wherein the cadmium salt can include Cd (CH)3CO2)2(cadmium acetate), CdSO4(cadmium sulfate), CdCl2(cadmium chloride), CdI2(cadmium iodide), and the like. In some cases, an ammonium salt may also be present as a PH buffer in the solution provided in the sample container 4, in which case the solution provided in the sample container 4 is alkaline as a whole. The total reaction equation for the configured solution in the sample container 4 to produce the chemical reaction is:
it should be noted that the deposition process of CdS is closely related to temperature, and when the temperature is increased, the deposition rate of the film is significantly increased, the film becomes dense from loose, the crystallization degree is increased, but the surface of the film is rough due to too high temperature. Therefore, the temperature difference of different regions in the water bath 1 is not suitable to be too large in the process of preparing CdS.
In the chemical water bath deposition device provided by the embodiment of the invention, a
Optionally, the chemical water bath deposition apparatus further comprises: the
In order to realize the rotation of the first stirring
In this embodiment, the first stirring
Alternatively, as shown in fig. 3, the first stirring
Specifically, the first connecting
Of course, the
In this embodiment, under the condition that the first stirring
In this embodiment, in the overall structure of the first stirring
Optionally, as shown in fig. 1 and 2, a
Here, the first stirring
In this embodiment, the first stirring
Optionally, a central region of the bottom of the water bath 1 is provided with a first stirring
the non-central area of the bottom of the water bath 1 is provided with one or more
The number of the
In this embodiment, the central region and the non-central region of the bottom of the water bath 1 may be provided with the first stirring
Optionally, in case that more than one
radial, centrosymmetric, circular, elliptical, triangular, polygonal, cross-shaped, concentric square, concentric rectangle, concentric circle, concentric triangle, and other concentric polygons.
In this embodiment, in the case that more than one
It can be seen that the present embodiment can further improve the heat exchange effect between different regions in the water bath 1 by distributing one or more
It is of course also possible that more than one
It should be noted that, in the chemical water bath deposition apparatus, when the total number of the
Optionally, as shown in fig. 1, the chemical water bath deposition apparatus further includes: a first
Specifically, the chemical water bath deposition apparatus may further include a
In this embodiment, the first
Optionally, the chemical water bath deposition apparatus further comprises: a
The
In order to realize the rotation of the
In this embodiment, the
Optionally, the
It should be noted that the
Optionally, a
It should be noted that if the
In this embodiment, the
Alternatively, as shown in fig. 1, the
The lower end (with respect to fig. 1) of the second mounting
It should be noted that, in the case that the
In this embodiment, the
Optionally, the chemical water bath deposition apparatus further comprises: a second rotation speed knob for adjusting the rotation speed of the
In particular, the second rotation speed knob may also be provided on the
In this embodiment, the second rotation speed knob and the first
Optionally, the chemical water bath deposition apparatus further comprises: a
Wherein, the quantity of
The controller is respectively electrically connected with the display panel and each
The
It should be noted that, under the condition that the difference between the temperature values measured by any two
Optionally, the chemical water bath deposition apparatus further comprises: and the
Specifically, the
In this embodiment, the heating parameters of the water bath 1 include, but are not limited to: the target temperature of the deionized water in the water bath 1, the time required for heating the deionized water to the target temperature, the time for keeping the deionized water at the target temperature, the heating rate of the deionized water and the like. In specific implementation, the target temperature of the deionized water can be between 80 degrees centigrade and 90 degrees centigrade, the time for keeping the target temperature of the deionized water can be between 20 minutes and 30 minutes, and the temperature rise speed of the deionized water can be between 3 degrees centigrade and 5 degrees centigrade per minute.
It can be seen that, in this embodiment, the heating parameters of the water bath 1 can be set on the temperature control table 34 according to actual requirements, so that the heating effect of the deionized water in the water bath 1 can be better matched with the actual requirements.
In conclusion, the present embodiment can increase the heating area, shorten the time for the temperatures at different heights to reach uniform distribution, and continuously maintain the temperature uniformity at different heights of the water bath, thereby improving the film deposition efficiency and the film deposition quality.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
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