阅读说明：本技术 多层陶瓷电容器 (Multilayer ceramic capacitor ) 是由 朴今珍 于 2018-12-05 设计创作，主要内容包括：本发明提供一种多层陶瓷电容器。所述多层陶瓷电容器包括：陶瓷主体,包括介电层和设置为彼此面对的第一内电极和第二内电极,介电层介于所述第一内电极和所述第二内电极之间；以及第一外电极和第二外电极,设置在所述陶瓷主体的外表面上,并分别电连接到所述第一内电极和所述第二内电极,其中,所述介电层包含具有包括核和壳的核-壳结构的电介质晶粒,并且在所述壳中排列有畴壁。(The invention provides a multilayer ceramic capacitor. The multilayer ceramic capacitor includes: a ceramic body including a dielectric layer and first and second internal electrodes disposed to face each other with the dielectric layer interposed therebetween; and first and second external electrodes disposed on outer surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively, wherein the dielectric layer includes dielectric crystal grains having a core-shell structure including a core and a shell, and domain walls are arranged in the shell.)

1. A multilayer ceramic capacitor comprising:

a ceramic body including a dielectric layer and first and second internal electrodes disposed to face each other with the dielectric layer interposed therebetween; and

first and second external electrodes disposed on an outer surface of the ceramic body and electrically connected to the first and second internal electrodes, respectively,

wherein the dielectric layer comprises a dielectric crystal grain having a core-shell structure including a core and a shell, and

domain walls are arranged in the shell.

2. The multilayer ceramic capacitor of claim 1, wherein each of the dielectric grains comprises a base material primary component and a secondary component, the base material primary component being composed of Ba_mTiO₃、(Ba_1-xCa_x)_m(Ti_1-yZr_y)O₃And Ba_m(Ti_1-xZr_x)O₃One or more selected from the group consisting of in Ba_mTiO₃In (Ba), m is more than or equal to 0.995 and less than or equal to 1.010_{1- x}Ca_x)_m(Ti_1-yZr_y)O₃In the formula, m is more than or equal to 0.995 and less than or equal to 1.010, x is more than or equal to 0 and less than or equal to 0.10 and 0<y is less than or equal to 0.20, in Ba_m(Ti_1-xZr_x)O₃In the formula, m is more than or equal to 0.995 and less than or equal to 1.010 and x is less than or equal to 0.10.

3. The multilayer ceramic capacitor according to claim 2, wherein a content of the auxiliary component based on a content of the base material main component included in the core and a content of the auxiliary component based on a content of the base material main component included in the shell are different from each other.

4. The multilayer ceramic capacitor according to claim 2, wherein the shell is a region having a content of the auxiliary component of 0.5mol to 30mol based on 100mol of the main component of the base material.

5. The multilayer ceramic capacitor according to claim 2, wherein the core is a region having a content of an auxiliary component of 0.1mol or less based on 100mol of the main component of the base material.

6. The multilayer ceramic capacitor according to claim 2, wherein the base material main component has an average particle diameter of 40nm or more and 150nm or less.

7. The multilayer ceramic capacitor according to claim 1, wherein the dielectric layer has a thickness of 0.4 μm or less, and each of the first and second internal electrodes has a thickness of 0.4 μm or less.

8. The multilayer ceramic capacitor of claim 1, wherein the shell has a thickness corresponding to 0.1 to 45% of the diameter of the dielectric grains.

9. The multilayer ceramic capacitor according to claim 1, wherein the shell has a thickness of 1nm or more and 100nm or less.

10. The multilayer ceramic capacitor of claim 1, wherein the number of domain walls arranged in the shell is three or more.

11. The multilayer ceramic capacitor of claim 1, wherein the dielectric layer further comprises dielectric grains having a shell structure including only a shell, and

domain walls are arranged in the dielectric crystal grains having the shell structure.

12. The multilayer ceramic capacitor as claimed in claim 11, wherein the number of domain walls arranged in the dielectric crystal grain having the shell structure is three or more.

Technical Field

The present disclosure relates to a multilayer ceramic capacitor capable of improving reliability.

Background

In general, an electronic component using a ceramic material, such as a capacitor, an inductor, a piezoelectric element, a varistor, a thermistor, etc., includes a ceramic body formed using the ceramic material, internal electrodes formed in the ceramic body, and external electrodes mounted on a surface of the ceramic body to be connected to the internal electrodes.

Recently, as electronic products have been miniaturized and multi-functionalized, multilayer ceramic capacitors have also been trended toward miniaturization and multi-functionalization. Therefore, a multilayer ceramic capacitor having a small size and a high capacitance has been required.

As a method of simultaneously achieving miniaturization and increasing the capacitance of a multilayer ceramic capacitor, there is a method of increasing the number of dielectric layers and electrode layers stacked in the multilayer ceramic capacitor by reducing the thicknesses of the dielectric layers and the electrode layers. Currently, the thickness of the dielectric layer is about 0.6 μm, and techniques for reducing the thickness of the dielectric layer are being continuously developed.

In addition, in order to achieve an increase in capacitance of the multilayer ceramic capacitor, a material having a high dielectric constant has been required. A typical material used in multilayer ceramic capacitors is barium titanate (BaTiO)₃) However, it is difficult to develop a material for increasing the dielectric constant due to the limitation of the inherent characteristics of barium titanate.

Therefore, the method has been carried out on the surface of barium titanate (BaTiO)₃) Doped with an additive or barium titanate (BaTiO)₃) The surface of (2) was reformed to realize a high dielectric constant, but the results were not remarkable.

Meanwhile, it is known that there is an influence of a domain wall of 90 ° in the principle of realizing a dielectric constant. Therefore, the improvement of barium titanate (BaTiO) has been continuously conducted₃) The research of the tetragonal technique of (1).

Due to the additives added to the dielectric material of the multilayer ceramic capacitor to improve the reliability of the multilayer ceramic capacitor and ensure the sinterability of the multilayer ceramic capacitor, the dielectric has a core-shell structure, but domain walls are not present in the shell, so that there is a limitation in achieving a high dielectric constant.

Disclosure of Invention

An aspect of the present disclosure may provide a multilayer ceramic capacitor capable of having improved reliability.

According to an aspect of the present disclosure, a multilayer ceramic capacitor may include: a ceramic body including a dielectric layer and first and second internal electrodes disposed to face each other with the dielectric layer interposed therebetween; and first and second external electrodes disposed on outer surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively, wherein the dielectric layer includes dielectric crystal grains having a core-shell structure including a core and a shell, and domain walls are arranged in the shell.

Drawings

The above and other aspects, features and advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

fig. 1 is a schematic perspective view illustrating a multilayer ceramic capacitor according to an exemplary embodiment of the present disclosure;

FIG. 2 is a sectional view taken along line I-I' of FIG. 1;

fig. 3 is a schematic view illustrating a dielectric grain having a core-shell structure according to the related art;

FIG. 4 is an enlarged view of region "P" of FIG. 2 according to an exemplary embodiment in the present disclosure;

FIG. 5 is an enlarged view of region "P" of FIG. 2 according to another exemplary embodiment in the present disclosure;

fig. 6 is a Transmission Electron Microscope (TEM) analysis photograph according to an exemplary embodiment in the present disclosure.

Detailed Description

Hereinafter, exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings.

Fig. 1 is a schematic perspective view illustrating a multilayer ceramic capacitor according to an exemplary embodiment of the present disclosure.

Fig. 2 is a sectional view taken along line I-I' of fig. 1.

Referring to fig. 1 and 2, a multilayer ceramic capacitor 100 according to the present exemplary embodiment may include: a ceramic body 110 including a dielectric layer 111 and first and second internal electrodes 121 and 122 disposed to face each other, the dielectric layer 111 being interposed between the first and second internal electrodes 121 and 122; and first and second external electrodes 131 and 132 disposed on the outer surface of the ceramic main body 110 and electrically connected to the first and second internal electrodes 121 and 122, respectively.

In the multilayer ceramic capacitor 100 according to an exemplary embodiment in the present disclosure, a "length direction" refers to an "L" direction of fig. 1, a "width direction" refers to a "W" direction of fig. 1, and a "thickness direction" refers to a "T" direction of fig. 1. Here, the "thickness direction" refers to a direction in which the dielectric layers 111 are stacked, i.e., a "stacking direction".

The shape of the ceramic body 110 is not particularly limited, but may be a rectangular parallelepiped shape as illustrated.

One ends of the plurality of internal electrodes 121 and 122 formed in the ceramic main body 110 may be exposed to one surface of the ceramic main body 110 or another surface of the ceramic main body 110 opposite to the one surface.

The internal electrodes 121 and 122 may have a pair of first and second internal electrodes 121 and 122 having different polarities.

One end of the first internal electrode 121 may be exposed to one surface of the ceramic main body 110, and one end of the second internal electrode 122 may be exposed to the other surface of the ceramic main body 110 opposite to the one surface.

The first and second external electrodes 131 and 132 may be formed on one surface of the ceramic body 110 and the other surface of the ceramic body 110 opposite to the one surface, respectively, and may be electrically connected to the first and second internal electrodes 121 and 122, respectively.

The material of each of the first and second internal electrodes 121 and 122 is not particularly limited, but may be a conductive paste containing one or more of silver (Ag), lead (Pb), platinum (Pt), nickel (Ni), and copper (Cu).

The first and second external electrodes 131 and 132 may be electrically connected to the first and second internal electrodes 121 and 122, respectively, to form a capacitance, and the second external electrode 132 may be connected to a potential different from that to which the first external electrode 131 is connected.

The conductive material contained in each of the first and second external electrodes 131 and 132 is not particularly limited, but may be nickel (Ni), copper (Cu), or an alloy thereof.

The thicknesses of the first and second external electrodes 131 and 132 may be appropriately determined according to purposes, etc., and for example, may be 10 to 50 μm, but are not particularly limited thereto.

According to an exemplary embodiment in the present disclosure, the raw material of the dielectric layer 111 is not particularly limited as long as sufficient capacitance can be obtained. For example, the raw material of the dielectric layer 111 may be barium titanate (BaTiO)₃) Powder particles.

The material of the dielectric layer 111 may be varied for purposes of this disclosure by varying the thickness of the dielectric layer such as barium titanate (BaTiO)₃) The powder particles are prepared by adding various ceramic additives, organic solvents, plasticizers, binders, dispersants, and the like to the powder particles.

The dielectric layers 111 may be in a sintered state, and adjacent dielectric layers may be integrated with each other such that the boundary therebetween is not easily apparent.

The first and second internal electrodes 121 and 122 may be formed on the dielectric layer 111, and the first and second internal electrodes 121 and 122 may be formed in the ceramic main body 110 by sintering, with the dielectric layer 111 interposed between the first and second internal electrodes 121 and 122.

The ceramic body 110 may include an effective portion a contributing to the capacitance forming the capacitor, and upper and lower cover portions C and C formed as upper and lower edge portions on upper and lower surfaces of the effective portion a, respectively.

The effective portion a may be formed by repeatedly stacking a plurality of first and second internal electrodes 121 and 122 with a dielectric layer interposed between the first and second internal electrodes 121 and 122.

The upper and lower capping portions C and C may be formed using the same material as that of the dielectric layer 111 and have the same configuration as that of the dielectric layer 111 except that the upper and lower capping portions C and C do not include an internal electrode.

That is, the upper and lower caps C and C may include, for example, barium titanate (BaTiO)₃) Ceramic materials based on ceramic materials.

The upper and lower capping portions C and C may be formed by stacking a single dielectric layer or two or more dielectric layers in a vertical direction on the upper and lower surfaces of the effective portion a, respectively, and may be mainly used to prevent damage to the first and second internal electrodes 121 and 122 due to chemical or physical stress.

The thickness of each of the dielectric layers 111 may be arbitrarily changed according to the capacitance design of the multilayer ceramic capacitor, and in an exemplary embodiment in the present disclosure, the thickness of one dielectric layer 111 after sintering may be 0.4 μm or less.

In addition, the thickness of each of the first and second internal electrodes 121 and 122 after sintering may be 0.4 μm or less.

Fig. 3 is a schematic view illustrating a dielectric grain having a core-shell structure according to the related art.

Referring to fig. 3, the dielectric layer of the multilayer ceramic capacitor according to the related art may include dielectric grains 1 each having a core-shell structure including a core 1a and a shell 1b, and may further include some dielectric grains 2 having a shell structure including only a shell.

In addition, in the dielectric crystal grain 1 having the core-shell structure including the core 1a and the shell 1b, a domain wall of 90 ° may exist in the core 1a, but may not exist in the shell 1 b.

Also, in the multilayer ceramic capacitor according to the related art, no 90 ° domain wall exists in the dielectric crystal grain 2 having the shell structure.

As described above, in the multilayer ceramic capacitor according to the related art, no domain wall exists in the case, and thus, there is a limit in realizing a high dielectric constant.

Fig. 4 is an enlarged view of region "P" of fig. 2 according to an exemplary embodiment in the present disclosure.

Referring to fig. 4, the dielectric layer 111 may include dielectric grains 11 each having a core-shell structure including a core 11a and a shell 11b, and domain walls d may be arranged in the shell 11 b.

The dielectric crystal grains 11 may have ABO₃The perovskite structure shown.

Here, a may include one or more selected from the group consisting of barium (Ba), strontium (Sr), lead (Pb), and calcium (Ca), but is not limited thereto.

B is not particularly limited, but may be any material that may be located at a B site in the perovskite structure, and may include, for example, one or more selected from the group consisting of titanium (Ti) and zirconium (Zr).

The dielectric crystal grain may include a base material main component composed of Ba and a sub-component_mTiO₃(0.995≤m≤1.010)、(Ba_1-xCa_x)_m(Ti_1-yZr_y)O₃(0.995≤m≤1.010，0≤x≤0.10，0<y is less than or equal to 0.20) and Ba_m(Ti_1-xZr_x)O₃(0.995. ltoreq. m.ltoreq.1.010 and x. ltoreq.0.10), but is not limited thereto.

According to example embodiments in the present disclosure, the dielectric layer 111 may include a reduction-resistant dielectric composition that may be sintered under a reducing atmosphere. The respective components of the dielectric composition forming the dielectric layer 111 including the dielectric crystal grains 11 will be described in more detail hereinafter.

a) Base material powder

The dielectric composition may comprise BaTiO₃The matrix material powder particles shown.

According to an exemplary embodiment in the present disclosure, the matrix material powder particles may be made of BaTiO₃Means, but is not limited to, this. For example, the base material powder particles may be composed of (Ba) in which Ca, Zr, or the like is partially solid-dissolved_1-xCa_x)(Ti_1-yCa_y)O₃、(Ba_{1- x}Ca_x)(Ti_1-yZr_y)O₃、Ba(Ti_1-yZr_y)O₃Etc.

That is, the matrix material powder particles may include particles of BaTiO₃、(Ba_1-xCa_x)(Ti_1-yCa_y)O₃(where 0. ltoreq. x.ltoreq.0.3 and 0. ltoreq. y.ltoreq.0.1), (Ba_1-xCa_x)(Ti_1-yZr_y)O₃(here, the number of the first and second electrodes,x is more than or equal to 0 and less than or equal to 0.3 and y is more than or equal to 0 and less than or equal to 0.5) and Ba (Ti)_{1- y}Zr_y)O₃(here, 0)<y ≦ 0.5).

The matrix material powder particles may have an average particle diameter of 40nm or more and 150nm or less, but are not limited thereto.

b) A first auxiliary component

According to example embodiments in the present disclosure, a dielectric composition may include an oxide or carbonate including at least one of Mn, V, Cr, Fe, Ni, Co, Cu, and Zn as a first auxiliary component.

The content of the oxide or carbonate including at least one of Mn, V, Cr, Fe, Ni, Co, Cu, and Zn contained as the first auxiliary component may be 0.05 mol% to 2.0 mol% based on 100 mol% of the base material powder particles.

The first auxiliary component may serve to lower the sintering temperature of the multilayer ceramic capacitor using the dielectric composition and improve the high-temperature withstand voltage characteristics of the multilayer ceramic capacitor.

The content of the first auxiliary component and the contents of the second to sixth auxiliary components, which will be described below, may be based on the content of 100 mol% of the base material powder particles, and may be specifically defined as mol% of the metal ions included in the respective auxiliary components.

When the content of the first auxiliary component is less than 0.05 mol%, the sintering temperature may increase, and the high-temperature withstand voltage characteristics may deteriorate to some extent.

When the content of the first auxiliary component is more than 2.0 mol%, high-temperature withstand voltage characteristics and room-temperature resistivity may be deteriorated.

Specifically, the dielectric composition according to an exemplary embodiment in the present disclosure may include the first auxiliary component having a content of 0.05 mol% to 2.0 mol% based on 100 mol% of the base material powder particles. Therefore, the dielectric composition can be sintered at a low temperature, and high-temperature withstand voltage characteristics can be obtained.

c) A second auxiliary component

According to an exemplary embodiment in the present disclosure, the dielectric composition may include a second auxiliary component that is an oxide or carbonate including a fixed valence acceptor element Mg.

The dielectric composition may include a second auxiliary component as an oxide or carbonate including a fixed valence acceptor element Mg and having a content of 0.0 mol% to 2.0 mol% based on 100 mol% of the base material powder particles.

The second auxiliary component, which is a fixed-valence acceptor element or a compound including a fixed-valence acceptor element, can regulate the microstructure (suppress abnormal grain growth) and impart resistance to reduction in the dielectric composition.

When the content of the second auxiliary component exceeds 2.0 mol% based on 100 mol% of the base material powder particles, the dielectric constant may be lowered, which is not preferable.

d) Third auxiliary component

According to an exemplary embodiment in the present disclosure, the dielectric composition may include a third auxiliary component that is an oxide or carbonate including at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Pm, Eu, Tb, Tm, Yb, Lu, and Sm.

The dielectric composition may include a third auxiliary ingredient that is an oxide or carbonate including at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Pm, Eu, Tb, Tm, Yb, Lu, and Sm and has a content of 0.0 mol% to 4.0 mol% based on 100 mol% of the base material powder particles.

The third auxiliary component may be used to prevent a decrease in reliability of the multilayer ceramic capacitor using the dielectric composition in the exemplary embodiments in the present disclosure.

When the content of the third auxiliary component exceeds 4.0 mol%, the reliability of the multilayer ceramic capacitor may be reduced, the dielectric constant of the dielectric composition may be reduced, and the high-temperature withstand voltage characteristics may be deteriorated.

e) Fourth auxiliary component

According to an exemplary embodiment in the present disclosure, the dielectric composition may include a fourth auxiliary component, which is an oxide or carbonate including Ba.

The dielectric composition may include a fourth auxiliary component that is an oxide or carbonate including Ba and has a content of 0.0 mol% to 4.15 mol% based on 100 mol% of the base material powder particles.

The content of the fourth auxiliary component may be based on the content of Ba included in the fourth auxiliary component without distinguishing the addition form such as an oxide or a carbonate.

The fourth auxiliary component may be used to facilitate sintering and adjust the dielectric constant in the dielectric composition, and when the content of the fourth auxiliary component exceeds 4.15 mol% based on 100 mol% of the base material powder particles, problems such as a decrease in the dielectric constant or an increase in the sintering temperature may occur.

f) Fifth subsidiary component

According to an exemplary embodiment in the present disclosure, the dielectric composition may include a fifth auxiliary component including one or more selected from the group consisting of an oxide or a carbonate of one or more of Ca and Zr.

The dielectric composition may include a fifth auxiliary component that is an oxide or carbonate including at least one of Ca and Zr and has a content of 0.0 mol% to 20.0 mol% based on 100 mol% of the base material powder particles.

The content of the fifth auxiliary component may be based on the content of at least one of Ca and Zr included in the fifth auxiliary component without distinguishing an addition form such as an oxide or a carbonate.

The fifth auxiliary component may be used to form a core-shell structure in the dielectric composition to improve the dielectric constant and reliability, and when the content of the fifth auxiliary component is 20.0 mol% or less based on 100 mol% of the base material powder particles, a dielectric composition that realizes a high dielectric constant and is excellent in high-temperature withstand voltage characteristics may be provided.

When the content of the fifth auxiliary component exceeds 20.0 mol% based on 100 mol% of the base material powder particles, the room-temperature dielectric constant may be lowered and the high-temperature withstand voltage characteristics may be deteriorated.

g) Sixth auxiliary component

According to an exemplary embodiment in the present disclosure, the dielectric composition may include an oxide including at least one of Si and Al or a glass compound including Si as the sixth auxiliary component.

The dielectric composition may include a sixth auxiliary component that is an oxide including at least one of Si and Al or a glass compound including Si and has a content of 0.0 mol% to 4.0 mol% based on 100 mol% of the base material powder particles.

The content of the sixth auxiliary component may be based on the content of at least one of Si and Al included in the sixth auxiliary component without distinguishing the addition form such as glass, oxide.

The sixth auxiliary component can be used to lower the sintering temperature of the multilayer ceramic capacitor using the dielectric composition and improve the high temperature withstand voltage characteristics of the multilayer ceramic capacitor.

When the content of the sixth auxiliary component exceeds 4.0 mol% based on 100 mol% of the base material powder particles, there may be problems such as deterioration in sinterability and density, formation of a second phase, and the like, which is not preferable.

Recently, as electronic products are miniaturized and multi-functionalized, multilayer ceramic capacitors are also tending to be miniaturized and multi-functionalized. Therefore, a multilayer ceramic capacitor having a small size and a large capacity has been required.

As a method of simultaneously achieving miniaturization and increasing the capacitance of a multilayer ceramic capacitor, there is a method of increasing the number of dielectric layers and electrode layers stacked in the multilayer ceramic capacitor by reducing the thicknesses of the dielectric layers and the electrode layers. Currently, the thickness of the dielectric layer is about 0.6 μm, and techniques for reducing the thickness of the dielectric layer are being continuously developed.

Meanwhile, in order to achieve an increase in capacitance of the multilayer ceramic capacitor, a material having a high dielectric constant has been required. A typical material used in multilayer ceramic capacitors is barium titanate (BaTiO)₃) However, it is difficult to develop a material for increasing the dielectric constant due to the limitation of the inherent characteristics of barium titanate.

In addition, due to additives added to dielectric materials of the multilayer ceramic capacitor to improve the reliability of the multilayer ceramic capacitor and ensure sinterability of the multilayer ceramic capacitor, the dielectric has a core-shell structure, but domain walls are not present in the shell, so that there is a limitation in achieving a high dielectric constant.

Generally, barium titanate (BaTiO) contained in a core in a dielectric crystal grain having a core-shell structure₃) Is a material with high tetragonality due to barium titanate (BaTiO) in the core₃) The additive of the auxiliary component is doped in a small amount, so that the additive is prepared by barium titanate (BaTiO)₃) Is used to measure the intrinsic high tetragonality of the core and the presence of 90 deg. domain walls in the core.

On the other hand, barium titanate (BaTiO) in the shell region₃) Is doped with a large amount of auxiliary component additive to make barium titanate (BaTiO)₃) Does not have a tetragonal structure but has a pseudo-cubic state. Thus, domain walls are not present in the shell region.

As a result, the dielectric constant of the shell region becomes smaller than that of the core, making it difficult to secure a high capacitance of the multilayer ceramic capacitor.

Returning to fig. 4, according to an exemplary embodiment in the present disclosure, the dielectric layer 111 may include dielectric grains 11 each having a core-shell structure including a core 11a and a shell 11b, and domain walls d may be arranged in the shell 11b, so that a multilayer ceramic capacitor 100 having a high capacitance may be realized.

That is, unlike the multilayer ceramic capacitor according to the related art, in the multilayer ceramic capacitor 100 according to the exemplary embodiment of the present disclosure, the domain wall d may be arranged in the shell 11b in the dielectric crystal grain 11 disposed in the dielectric layer 111 and having the core-shell structure.

In the method of arranging the domain walls d in the shell 11b, it may be important to make the lattice structures of the core 11a and the shell 11b uniform.

For this reason, when barium titanate (BaTiO) is used during sintering₃) When the shell is formed while doping an additive as an auxiliary component, high thermal energy may be applied to form a crystal lattice stably, or barium titanate (BaTiO) may be previously added₃) Some additive of auxiliary components are doped to make the crystal lattice form at a stable position, thereby making the crystal lattice uniform.

For this reason, more details will be described below.

According to an exemplary embodiment in the present disclosure, the content of the auxiliary component based on the content of the base material main component included in the core 11a and the content of the auxiliary component based on the content of the base material main component included in the shell 11b may be different from each other.

That is, the content of the auxiliary component additive measured in the core 11a and the content of the auxiliary component additive measured in the shell 11b may be different from each other.

In detail, in the shell 11b, the content of the auxiliary component may be 0.5mol to 30mol based on 100mol of the base material main component.

As described above, in the dielectric crystal grains 11, a region where the measured content of the auxiliary component is in the range of 0.5mol to 30mol based on 100mol of the main component of the base material may be defined as a shell region.

According to an exemplary embodiment in the present disclosure, a region where the measured content of the auxiliary component is in the range of 0.5mol to 30mol based on 100mol of the main component of the base material may be the shell 11b, and a domain wall d may be formed in the shell 11 b.

Next, in the core 11a, the content of the auxiliary component may be 0.1mol or less based on 100mol of the base material main component.

As described above, in the dielectric crystal grains 11, a region where the measured content of the auxiliary component is in the range of 0.1mol or less based on 100mol of the main component of the base material can be defined as a core region.

According to exemplary embodiments in the present disclosure, a region where the measured content of the auxiliary component is in the range of 0.1mol or less based on 100mol of the main component of the matrix material may be the core 11a, and in the core 11a, the amount of the doped auxiliary component may be very small, so that domain walls d may be aligned in the core 11a due to the inherent high tetragonality of barium titanate.

As described above, according to exemplary embodiments in the present disclosure, unlike a structure in which a domain wall according to the related art is not present in the shell, the domain wall d may be arranged in the shell 11b in which the measured content of the auxiliary component is in the range of 0.5mol to 30mol based on 100mol of the main component of the base material, so that the multilayer ceramic capacitor 100 having high capacitance may be realized.

The auxiliary components may be the first to sixth auxiliary components added to the dielectric composition as described above, and specific examples of the auxiliary components may include rare earth elements such as dysprosium (Dy), holmium (Ho), or yttrium (Y), magnesium (Mg), manganese (Mn), aluminum (Al), or the like.

The shell 11b may have a thickness corresponding to 0.1% to 45% of the diameter of the dielectric crystal grain 11, and a specific absolute value of the thickness may be 1nm or more and 100nm or less. However, the thickness of the case 11b is not necessarily limited thereto.

That is, the shell region whose measured content of the auxiliary component is in the range of 0.5mol to 30mol based on 100mol of the base material main component may have a thickness corresponding to 0.1% to 45% of the diameter of the dielectric crystal grain 11.

According to an exemplary embodiment in the present disclosure, the number of domain walls d arranged in the shell 11b may be three or more.

Since the number of domain walls d arranged in the shell 11b is three or more, the distance between the domain walls d can be reduced, so that a high dielectric constant can be achieved in the dielectric crystal grains 11 having the same size.

That is, in order to achieve a high dielectric constant in the dielectric grains 11 having the same size, the number of domain walls d arranged in the shell 11b needs to be three or more, and since the number of domain walls d increases, the distance between the domain walls d may be reduced so that a high dielectric constant may be secured, but the size of the dielectric grains 11 is limited so that the number of domain walls d has to be limited to a predetermined number.

Meanwhile, referring to fig. 4, in addition to the dielectric crystal grains 11 having a core-shell structure including a core and a shell, there may be some dielectric crystal grains 21 having a shell structure including only a shell.

The dielectric crystal grains 21 having the shell structure may have a structure in which the core does not exist, and since the content of the measured auxiliary component is in the range of 0.5mol to 30mol based on 100mol of the base material main component in the entire region in the dielectric crystal grains 21 having the shell structure, the dielectric crystal grains 21 having the shell structure may be determined to have a structure in which the core does not exist.

According to an exemplary embodiment in the present disclosure, the domain wall d may also be arranged in the dielectric crystal grain 21 having a shell structure.

Dielectric grains having a shell structure may also be present in the dielectric layer of the multilayer ceramic capacitor according to the related art. However, even in this case, no domain wall exists in the dielectric crystal grain having the shell structure.

However, in exemplary embodiments according to the present disclosure, the domain wall d may also be arranged in the dielectric crystal grain 21 having the shell structure, and thus high capacitance may be ensured due to a high dielectric constant.

Fig. 5 is an enlarged view of region "P" of fig. 2 according to another exemplary embodiment in the present disclosure.

According to another exemplary embodiment in the present disclosure, the dielectric layer 111 may further include a dielectric grain 21 having a shell structure including only a shell, and the domain wall d may be arranged in the dielectric grain 21 having the shell structure.

The number of domain walls d arranged in the dielectric grain 21 having the shell structure may be three or more.

The exemplary embodiment in the present disclosure shown in fig. 5 may be different from the exemplary embodiment in the present disclosure described above and shown in fig. 4 in that a fraction of the dielectric grains 21 having a shell structure in the dielectric layer 111 is greater than the fraction of the dielectric grains having a shell structure in the exemplary embodiment in the present disclosure described above and shown in fig. 4.

That is, according to another exemplary embodiment in the present disclosure, the fraction of the dielectric crystal grains 21 having the shell structure in the dielectric layer 111 may be greater than that in the exemplary embodiment in the present disclosure, and may be greater than that of the dielectric crystal grains 11 having the core-shell structure.

When the proportion of the base material main component (i.e., barium titanate powder particles) previously doped with the auxiliary component additive is high in the process of manufacturing the dielectric composition, the fraction of the dielectric crystal grains 21 in the dielectric layer 111 may increase.

Features other than the differences described above may be the same as those according to example embodiments in the present disclosure.

Hereinafter, the present disclosure will be described in more detail by way of inventive examples and comparative examples. However, they are intended to aid in a detailed understanding of the present disclosure, and the scope of the present disclosure is not limited by the inventive examples.

(inventive example 1)

In the inventive example, additives such as Si, Mg, Mn, and Dy, a binder, and an organic solvent such as ethanol are added to the solution including barium titanate (BaTiO)₃) Dielectric raw material powder particles of powder particles and a dielectric ceramic composition comprising barium titanate (BaTiO)₃) Dielectric raw material of powder particles are wet-mixed to prepare a dielectric slurry. Then, the dielectric slurry was applied onto a carrier film and dried to form a ceramic green sheet, resulting in a dielectric layer.

In this case, the additives of all elements are monodisperse and added in a size of 40% or less of the size of barium titanate powder particles.

The ceramic green sheet can be produced by the following method: a slurry is prepared by mixing ceramic powder particles, a binder and a solvent with each other, and the slurry is manufactured into a sheet shape having a thickness of several μm by a doctor blade method.

Next, a conductive paste for an internal electrode may be prepared, the conductive paste for an internal electrode comprising 40 to 50 parts by weight of nickel powder particles having an average particle diameter of 0.1 to 0.2 μm.

A conductive paste for internal electrodes is applied to the ceramic green sheets by a screen printing method to form internal electrodes, the ceramic green sheets on which internal electrode patterns are provided are stacked to form a stacked body, and then the stacked body is pressed and cut.

Then, the cut laminate is heated to remove the binder, and sintered in a high-temperature reducing atmosphere to form a ceramic body.

In the sintering process, in a reducing atmosphere (0.1% H)₂/99.9％N₂And H₂O/H₂/N₂Atmosphere) and rapid temperature rise is performed in a predetermined area. Sintering was performed at a sintering temperature of 1284 ℃ for two hours under nitrogen (N)₂) At 1000 ℃ under atmosphereAnd further oxidized for three hours to perform heat treatment.

Then, a capping process (termination process) and an electrode sintering process may be performed on the sintered ceramic body using a copper (Cu) paste to complete an external electrode.

Further, after sintering, the dielectric layer 111 in the ceramic main body 110 and the first and second internal electrodes 121 and 122 are manufactured to have a thickness of 0.4 μm or less.

(inventive example 2)

Barium titanate (BaTiO) doped with Dy and Mg is synthesized at 1200 ℃ by hydrothermal synthesis₃) The powder particles are heat treated.

Barium titanate (BaTiO) formed after heat treatment₃) Wet grinding and drying, adding additives such as Si and Mn, binder and organic solvent such as ethanol to the mixture containing barium titanate (BaTiO)₃) And dielectric raw material powder particles previously manufactured and wet-mixed with the additive-previously doped powder particles to prepare a dielectric slurry. Then, the dielectric slurry was coated on a carrier film and dried to form a ceramic green sheet.

Next, a conductive paste for an internal electrode may be prepared, the conductive paste for an internal electrode comprising 40 to 50 parts by weight of nickel powder particles having an average particle diameter of 0.1 to 0.2 μm.

A conductive paste for internal electrodes is applied to the ceramic green sheets by a screen printing method to form internal electrodes, and the ceramic green sheets on which internal electrode patterns are provided are stacked to form a stacked body, and then the stacked body is pressed and cut.

Then, the cut laminate is heated to remove the binder, and sintered in a high-temperature reducing atmosphere to form a ceramic body.

In the sintering process, in a reducing atmosphere (0.1% H)₂/99.9％N₂And H₂O/H₂/N₂Atmosphere) and rapid temperature rise is performed in a predetermined area. Sintering was performed at a sintering temperature of 1192 ℃ for two hours under nitrogen (N)₂) Reoxidation was performed at 1000 c for three hours under an atmosphere to perform heat treatment.

(inventive example 3)

A multilayer ceramic capacitor was manufactured by the same method as that of inventive example 2, using only barium titanate previously doped with an additive, but not performing rapid temperature rise.

(comparative example)

A multilayer ceramic capacitor was manufactured by the same method as that of inventive example 1, but the rapid temperature rise was not performed, and sintering was performed at a temperature of 1192 ℃.

For inventive examples 1 to 3 and comparative examples (prototype multilayer ceramic capacitor (MLCC) samples completed as described above), nominal dielectric constant, breakdown voltage (BDV), Insulation Resistance (IR) defect rate, moisture load resistance defect rate, and the like were evaluated.

The dielectric constant of the MLCC was measured using an LCR meter under conditions of 1kHz and AC 3.0V/μm.

The insulation resistance IR was measured after 60 seconds in a state where 10 samples of each sample were applied with DC 10V/. mu.m.

The BDV was measured using a Keithely meter, and a voltage value at the instant when the current value became 10mA while the voltage was applied in a scanning manner in increments of 1.00000V from 0V was measured as the BDV value.

Table 1 below shows the electrical characteristics of the prototype multilayer ceramic capacitor (MLCC) according to the experimental examples (inventive example and comparative example).

[ Table 1]

Inventive example 1 to inventive example 3 may be when in barium titanate (BaTiO) during sintering₃) When the shell is formed while adding an additive (auxiliary component), the shell is formed by stabilizing the crystal lattice by imparting high thermal energy or by adding barium titanate (BaTiO)₃) By making the lattice structure uniform in the case where the domain wall d is arranged in the shell 11b, the comparative example (the case where a multilayer ceramic capacitor is manufactured by the method according to the related art) can be made by the method of previously doping some additive of the auxiliary component so that the lattice is disposed at a stable positionIs the case where no domain wall d is arranged in the shell.

As can be appreciated from table 1 above, in inventive example 1 to inventive example 3, the dielectric constant and BDV were high, and the IR defect rate and the moisture load resistance defect rate were low, as compared with those in the comparative example.

Fig. 6 is a Transmission Electron Microscope (TEM) analysis photograph according to an exemplary embodiment in the present disclosure.

In fig. 6, the dielectric microstructure of inventive example 2 is shown. The dielectric microstructure was observed as an image taken by TEM.

Referring to fig. 6, it may be appreciated that, in a dielectric grain according to an exemplary embodiment in the present disclosure, domain walls are arranged in a shell as well as in a core.

When performing TEM analysis, depending on the angle of analysis, the domain walls that actually exist may not be observed. Domain walls can be observed when analysis is performed while the dielectric grains are tilted at several angles.

According to exemplary embodiments in the present disclosure, since domain walls are also arranged in the shell, a dielectric constant may be increased, so that a multilayer ceramic capacitor having high capacitance may be realized.

As set forth above, according to exemplary embodiments in the present disclosure, dielectric grains in a ceramic body may include dielectric grains having a core-shell structure, and domain walls may be arranged in a shell, so that a multilayer ceramic capacitor having high capacitance may be realized.

While exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the scope of the invention as defined by the appended claims.