阅读说明：本技术 一种直拉单晶硅棒取晶装置及其取晶工艺 (Crystal taking device and crystal taking process of straight pulling single crystal silicon rod ) 是由 郭志荣 张文霞 高润飞 王林 张石晶 郭谦 霍志强 于 2020-04-23 设计创作，主要内容包括：本发明提供一种直拉单晶硅棒取晶装置,包括第一转轴、第二转轴、绕设于所述第一转轴设置的缆绳、用于驱动所述第一转轴旋转的第一驱动件和用于驱动所述第二转轴的第二驱动件,所述缆绳一端与所述第一转轴连接,另一端通过籽晶与单晶硅棒连接；所述第一驱动件带动所述第一转轴使所述单晶硅棒沿所述单晶硅棒轴线方向上下移动；所述第二驱动件带动所述第二转轴使所述单晶硅棒沿所述单晶硅棒轴线旋转移动。本发明还提出一种直拉单晶硅棒取晶工艺。本发明提出的取晶装置,结构设计简单且易于操作,能安全地使单晶硅棒取出并放置在取晶筒中,提高了取晶装置的使用寿命,适合各种直径的单晶硅棒的取晶操作,适普性广,取晶效果好,工作效率高。(The invention provides a crystal taking device for a czochralski monocrystalline silicon rod, which comprises a first rotating shaft, a second rotating shaft, a cable arranged around the first rotating shaft, a first driving part for driving the first rotating shaft to rotate and a second driving part for driving the second rotating shaft, wherein one end of the cable is connected with the first rotating shaft, and the other end of the cable is connected with the monocrystalline silicon rod through a seed crystal; the first driving part drives the first rotating shaft to enable the single crystal silicon rod to move up and down along the axis direction of the single crystal silicon rod; the second driving part drives the second rotating shaft to enable the single crystal silicon rod to rotate and move along the axis of the single crystal silicon rod. The invention also provides a crystal taking process of the Czochralski single crystal silicon rod. The crystal taking device provided by the invention is simple in structural design and easy to operate, can safely take out and place the single crystal silicon rod in the crystal taking cylinder, prolongs the service life of the crystal taking device, is suitable for crystal taking operation of the single crystal silicon rods with various diameters, and has the advantages of wide universality, good crystal taking effect and high working efficiency.)

1. A crystal taking device for a czochralski monocrystalline silicon rod is characterized by comprising a first rotating shaft, a second rotating shaft, a cable arranged around the first rotating shaft, a first driving part used for driving the first rotating shaft to rotate and a second driving part used for driving the second rotating shaft, wherein one end of the cable is connected with the first rotating shaft, and the other end of the cable is connected with the monocrystalline silicon rod through a seed crystal; the first driving part drives the first rotating shaft to enable the single crystal silicon rod to move up and down along the axis direction of the single crystal silicon rod; the second driving part drives the second rotating shaft to enable the single crystal silicon rod to rotate and move along the axis of the single crystal silicon rod.

2. The pulling monocrystalline silicon rod crystal taking device as set forth in claim 1, wherein the first rotating shaft is horizontally arranged, the second rotating shaft is vertically arranged, the first rotating shaft and the second rotating shaft are connected through a connecting piece, and the second rotating shaft can drive the first rotating shaft to rotate together.

3. The pulling single crystal silicon rod crystal taking device as set forth in claim 2, further comprising an external controller, wherein the controller is connected to the first driving member and the second driving member respectively.

4. The pulling crystal silicon rod pulling apparatus as set forth in any one of claims 1 to 3, wherein the first driving member and the second driving member are variable speed motors.

5. A crystal taking process of a Czochralski single crystal silicon rod is characterized in that the crystal taking device according to any one of claims 1-4 is adopted, and the steps comprise:

rising: the first driving part drives the single crystal silicon rod to move upwards through the first rotating shaft;

rotating: the second driving part drives the single crystal silicon rod to rotate and move through the second rotating shaft;

and (3) descending: the first driving part drives the single crystal silicon rod to descend through the first rotating shaft.

6. The process as set forth in claim 5, wherein during the raising process, the silicon single crystal rod moves upward at a predetermined speed and then decelerates until it stops, and the upward movement speed of the silicon single crystal rod is 300-600 mm/min.

7. The process as set forth in claim 6, wherein during the descending process, the silicon single crystal rod moves downward at a predetermined speed and then decelerates until it stops, and the downward movement speed of the silicon single crystal rod is 200-600 mm/min.

8. The process as set forth in claim 7, wherein the silicon single crystal rod is raised at a rate of 300-600mm/min for a distance of at least 2/3 of the overall raising distance.

9. The process as set forth in claim 8, wherein the distance that the single crystal silicon rod moves upward at the speed of 300-600mm/min is greater than the distance that the silicon rod moves downward at the speed of 200-600 mm/min.

10. The crystal extraction process of the czochralski single crystal silicon rod as claimed in any one of claims 5 to 9, wherein the rotation speed of the single crystal silicon rod is constant during the rotation, and the rotation speed of the single crystal silicon rod is 1-3 r/min.

Technical Field

The invention belongs to the technical field of solar straight-pull monocrystalline silicon, and particularly relates to a crystal taking device and a crystal taking process of a straight-pull monocrystalline silicon rod.

Background

The silicon single crystal rod is gradually inclined to be large-sized, the maximum diameter of the existing large-sized silicon single crystal rod can reach 310mm, and the silicon single crystal rod with the diameter exceeding 240mm is the large-diameter silicon single crystal rod. The existing crystal pulling process can pull a large-diameter single crystal silicon rod of 4-5m, the length of the single crystal silicon rod is long, so that the whole weight of the single crystal silicon rod is heavier, when crystals are taken, if the single crystal silicon rod is suddenly stopped in the descending or lifting process, the single crystal silicon rod is easily broken by inertia jump, especially, the abrasion of a copper cross of a pulling head is serious, the risk of breaking and pulling is caused to later operation, and the single crystal silicon rod is easily shaken and shaken under the influence of the lifting or the quick descending, so that the seed crystals are easily broken.

Disclosure of Invention

The invention provides a crystal taking device of a straight pulling single crystal silicon rod and a crystal taking process thereof, which are particularly suitable for crystal taking operation of a large-diameter single crystal silicon rod and solve the technical problem of cable breaking or seed crystal breakage caused by incapability of changing speed in the crystal taking operation process.

In order to solve the technical problems, the invention adopts the technical scheme that:

a crystal taking device for a czochralski monocrystalline silicon rod comprises a first rotating shaft, a second rotating shaft, a cable arranged around the first rotating shaft, a first driving piece used for driving the first rotating shaft to rotate and a second driving piece used for driving the second rotating shaft, wherein one end of the cable is connected with the first rotating shaft, and the other end of the cable is connected with the monocrystalline silicon rod through a seed crystal; the first driving part drives the first rotating shaft to enable the single crystal silicon rod to move up and down along the axis direction of the single crystal silicon rod; the second driving part drives the second rotating shaft to enable the single crystal silicon rod to rotate and move along the axis of the single crystal silicon rod.

Furthermore, first pivot level sets up, the vertical setting of second pivot, first pivot with the second pivot is through the connecting piece connection setting, the second pivot can drive first pivot is rotatory together.

Furthermore, the device also comprises an external controller, and the controller is respectively connected with the first driving piece and the second driving piece.

Further, the first driving member and the second driving member are both variable speed motors.

A crystal taking process of a czochralski single crystal silicon rod adopts the crystal taking device, and comprises the following steps:

rising: the first driving part drives the single crystal silicon rod to move upwards through the first rotating shaft;

rotating: the second driving part drives the single crystal silicon rod to rotate and move through the second rotating shaft;

and (3) descending: the first driving part drives the single crystal silicon rod to descend through the first rotating shaft.

Further, in the rising process, the silicon single crystal rod moves upwards at a set speed and then decelerates until the silicon single crystal rod stops, and the upward movement speed of the silicon single crystal rod is 300-600 mm/min.

Further, in the descending process, the silicon single crystal rod moves downwards at a set speed and then decelerates until the silicon single crystal rod stops, and the downward moving speed of the silicon single crystal rod is 200-600 mm/min.

Further, the distance of the silicon single crystal rod which ascends and moves at the speed of 300-600mm/min is at least 2/3 of the whole ascending distance.

Further, the distance of the silicon single crystal rod which ascends and moves at the speed of 300-600mm/min is larger than the distance of the silicon single crystal rod which descends at the speed of 200-600 mm/min.

Further, in the rotating process, the rotating speed of the single crystal silicon rod is a fixed value, and the rotating speed of the single crystal silicon rod is 1-3 r/min.

Compared with the prior art, the crystal taking device provided by the invention is particularly suitable for the crystal taking operation of large-diameter single crystal silicon rods, solves the technical problem of cable breaking or seed crystal breakage caused by incapability of changing speed in the crystal taking operation process in the prior art, has simple structural design and easy operation, can safely take out and place the single crystal silicon rods in the crystal taking barrel, prolongs the service life of the crystal taking device, is suitable for the crystal taking operation of the single crystal silicon rods with various diameters, and has good crystal taking effect, high working efficiency, strong practicability and easy popularization.

Drawings

FIG. 1 is a schematic structural diagram of a crystal pickup apparatus according to an embodiment of the present invention;

FIG. 2 is a top view of a crystal taking apparatus according to an embodiment of the present invention.

In the figure:

10. first rotating shaft 20, second rotating shaft 30 and first driving piece

40. Second drive 50, cable 60, seed crystal

70. Connecting piece 80, upright 90 and controller

100. Crystal taking barrel

Detailed Description

The invention is described in detail below with reference to the figures and specific embodiments.

The embodiment provides a crystal taking device for a czochralski silicon single crystal rod, as shown in fig. 1, comprising a first rotating shaft 10, a second rotating shaft 20, a cable 50 wound on the first rotating shaft 10, a first driving member 30 for driving the first rotating shaft 10 to rotate and a second driving member 40 for driving the second rotating shaft 20, wherein one end of the cable 50 is connected with the first rotating shaft 10, the other end is connected with the silicon single crystal rod through a seed crystal 60, and the first driving member 30 drives the first rotating shaft 10 so as to enable the silicon single crystal rod to move up and down along the axial direction thereof; the second driving member 40 drives the second rotating shaft 20 to rotate the single crystal silicon rod along the axis thereof.

Wherein, the first rotating shaft 10 is horizontally arranged, the second rotating shaft 20 is vertically arranged at the upper end part of the upright post 80, the second driving piece 40 is connected with one end of the second rotating shaft 20 far away from one side of the upright post, the first driving piece 30 is connected with one end of the first rotating shaft 10, the first rotating shaft 10 and the second rotating shaft 20 are arranged perpendicular to each other, the first rotating shaft 10 and the second rotating shaft 20 are connected through a connecting piece 70, one end of the connecting piece 70 is provided with a through hole and is penetrated and arranged by the second rotating shaft 20 and is connected with the second rotating shaft 20 through a gear, the other end of the connecting piece 70 is arranged in a suspended manner, the first rotating shaft 10 is horizontally arranged on the upper end surface of the connecting piece 70 in the suspended manner, the first driving member 30 is connected with the first rotating shaft 10 and supported by the connecting member 70, one end of the first driving member 30 far away from the first rotating shaft 10 is suspended, the second shaft 20 rotates to drive the first shaft 10 to rotate together, and the first shaft 10 drives the single crystal silicon rod to rotate together through the cable 50. Further, the crystal taking device further comprises an external controller 90, wherein the controller 90 is respectively connected with the first driving part 30 and the second driving part 40 and is respectively used for controlling the rotating speed of the first rotating shaft 10 and the rotating speed of the second rotating shaft 20 so as to adjust the up-and-down movement or rotating speed of the single crystal silicon rod at any time.

In the embodiment, the cable is preferably 50 steel cables, which have high strength and elasticity; the first drive member 30 and the second drive member 40 are variable speed motors that provide power at multiple different speeds, allowing the controller 90 to better set the speed of the single crystal silicon rod as it is raised, rotated, and lowered.

The working process in this embodiment: the controller 90 is turned on and connected to the first driving member 30, and the first rotating shaft 10 is powered by the first driving member 30 to rotate the first rotating shaft 30 clockwise, so that the cable 50 also rotates clockwise around the axis of the first rotating shaft 10, and the cable 50 drives the seed crystal 60 and the single crystal silicon rod to move vertically and upwardly together. In the ascending process, the silicon single crystal rod moves upwards at a certain speed and then decelerates until the silicon single crystal rod stops, the upward moving speed of the silicon single crystal rod is 300-. The first driving member 30 is a variable speed motor, so that the speed of the first rotating shaft 10 can be adjusted at any time, and further, the speed of the single crystal silicon rod can be adjusted to gradually and slowly rise from a fast speed to a gradually and slowly reduced speed until the silicon rod reaches the end point and stops.

Then, the controller 90 is connected with the second driving element 40, and at this time, the first driving element 30 and the first rotating shaft 10 stop working; the second driving member 40 drives the second rotating shaft 20 to rotate and move, and further drives the single crystal silicon rod to rotate, so as to enable the single crystal silicon rod to leave the position of the main chamber of the single crystal furnace, and move and rotate to a position right above the position of the crystal taking barrel 100, and the rotation angle of the single crystal silicon rod needs to be determined according to the position of the crystal taking barrel 100, which is not particularly limited herein. In the moving and rotating process, the silicon single crystal rod must be ensured to uniformly and slowly rotate and move, that is, the rotating speed of the second rotating shaft 20 is a fixed value, the rotating speed of the silicon single crystal rod is 1-3r/min, the slow rotation is beneficial to the silicon single crystal rod to be vertically and stably hoisted by the cable 50, the silicon single crystal rod is prevented from shaking or swinging, and the seed crystal 60 is prevented from being broken to cause production accidents.

Finally, the controller 90 is connected to the first driving member 30 again, and the second driving member 40 and the second rotating shaft 20 stop working; the first drive member 30 powers the first shaft 10 to rotate the first shaft 30 counterclockwise, which in turn rotates the cable 50 counterclockwise about the axis of the first shaft 10, causing the cable 50 to move the seed crystal 60 vertically downward along with the single crystal silicon rod. In the descending process, the silicon single crystal rod moves downwards at a certain speed and then decelerates until the silicon single crystal rod stops, the downward moving speed of the silicon single crystal rod is 200-600mm/min, namely, after the silicon single crystal rod descends to a certain distance, the silicon single crystal rod starts to decelerate until the silicon single crystal rod descends to the bottom of the crystal taking barrel 100, namely, the moving speed of the silicon single crystal rod is zero when the lower end surface of the silicon single crystal rod is in low contact with the barrel of the crystal taking barrel 100. Preferably, the descending distance of the silicon single crystal rod at the speed of 200-600mm/min is less than the ascending moving distance at the speed of 300-600mm/min, because in the descending process, the impulse force of the silicon single crystal rod when descending is large due to the inertia of the descending speed of the silicon single crystal rod and the self gravity, the silicon single crystal rod needs to be decelerated and slowly descended in advance, meanwhile, since the crystal taking barrel 100 also has a certain height which is at least 1/3 of the length of the silicon single crystal rod, if the distance of the silicon single crystal rod when descending is too long, the risk that the silicon single crystal rod collides or interferes with the inner wall of the crystal taking barrel 100 can be caused, the appearance of the silicon single crystal rod can be influenced, other safety accidents can occur, meanwhile, the deceleration value of the silicon single crystal rod in the descending process is less than the deceleration value in the ascending process, that is to say, the speed of the silicon single crystal rod in the deceleration descending process can be lower, which is not only beneficial to the safe descending of the silicon single crystal rod, but also is beneficial to the accurate placement of the single crystal silicon rod in the crystal taking cylinder 100.

A crystal taking process of a Czochralski single crystal silicon rod adopts the crystal taking device, and comprises the following steps:

rising: the first driving member 30 drives the single crystal silicon rod to move up through the first rotating shaft 10.

Specifically, the controller 90 is opened and connected to the first driving member 30, and the first rotating shaft 10 is powered by the first driving member 30, so that the first rotating shaft 30 is rotated clockwise, and the cable 50 is also rotated clockwise around the axis of the first rotating shaft 10, so that the cable 50 drives the seed crystal 60 and the single crystal silicon rod to move vertically upward together. In the ascending process, the silicon single crystal rod moves upwards at a certain speed and then decelerates until the silicon single crystal rod stops, the upward moving speed of the silicon single crystal rod is 300-. The first driving member 30 is a variable speed motor, so that the speed of the first rotating shaft 10 can be adjusted at any time, and further, the speed of the single crystal silicon rod can be adjusted to gradually and slowly rise from a fast speed to a gradually and slowly reduced speed until the silicon rod reaches the end point and stops.

Rotating: the second driving member 40 drives the single crystal silicon rod to rotate and move through the second rotating shaft 20.

Specifically, the controller 90 is connected to the second driving element 40, and at this time, the first driving element 30 and the first rotating shaft 10 stop working; the second driving member 40 drives the second rotating shaft 20 to rotate and move, and further drives the single crystal silicon rod to rotate, so as to enable the single crystal silicon rod to leave the position of the main chamber of the single crystal furnace, and move and rotate to a position right above the position of the crystal taking barrel 100, and the rotation angle of the single crystal silicon rod needs to be determined according to the position of the crystal taking barrel 100, which is not particularly limited herein. In the moving and rotating process, the silicon single crystal rod must be ensured to uniformly and slowly rotate and move, that is, the rotating speed of the second rotating shaft 20 is a fixed value, the rotating speed of the silicon single crystal rod is 1-3r/min, the slow rotation is beneficial to the silicon single crystal rod to be vertically and stably hoisted by the cable 50, the silicon single crystal rod is prevented from shaking or swinging, and the seed crystal 60 is prevented from being broken to cause production accidents.

And (3) descending: the first driving member 30 drives the single crystal silicon rod to descend through the first rotating shaft 10.

Specifically, the controller 90 is connected to the first driving member 30 again, and the second driving member 40 and the second rotating shaft 20 stop working; the first drive member 30 powers the first shaft 10 to rotate the first shaft 30 counterclockwise, which in turn rotates the cable 50 counterclockwise about the axis of the first shaft 10, causing the cable 50 to move the seed crystal 60 vertically downward along with the single crystal silicon rod. In the descending process, the silicon single crystal rod moves downwards at a certain speed and then decelerates until the silicon single crystal rod stops, the downward moving speed of the silicon single crystal rod is 200-600mm/min, namely, after the silicon single crystal rod descends to a certain distance, the silicon single crystal rod starts to decelerate until the silicon single crystal rod descends to the bottom of the crystal taking barrel 100, namely, the moving speed of the silicon single crystal rod is zero when the lower end surface of the silicon single crystal rod is in low contact with the barrel of the crystal taking barrel 100. Preferably, the descending distance of the silicon single crystal rod at the speed of 200-600mm/min is less than the ascending moving distance at the speed of 300-600mm/min, because in the descending process, the impulse force of the silicon single crystal rod when descending is large due to the inertia of the descending speed of the silicon single crystal rod and the self gravity, the silicon single crystal rod needs to be decelerated and slowly descended in advance, meanwhile, since the crystal taking barrel 100 also has a certain height which is at least 1/3 of the length of the silicon single crystal rod, if the distance of the silicon single crystal rod when descending is too long, the risk that the silicon single crystal rod collides or interferes with the inner wall of the crystal taking barrel 100 can be caused, the appearance of the silicon single crystal rod can be influenced, other safety accidents can occur, meanwhile, the deceleration value of the silicon single crystal rod in the descending process is less than the deceleration value in the ascending process, that is to say, the speed of the silicon single crystal rod in the deceleration descending process can be lower, which is not only beneficial to the safe descending of the silicon single crystal rod, but also is beneficial to the accurate placement of the single crystal silicon rod in the crystal taking cylinder 100.

Compared with the prior art, the crystal taking device provided by the invention is particularly suitable for the crystal taking operation of large-diameter single crystal silicon rods, solves the technical problem of cable breaking or seed crystal breakage caused by incapability of changing speed in the crystal taking operation process in the prior art, has simple structural design and easy operation, can safely take out and place the single crystal silicon rods in the crystal taking barrel, prolongs the service life of the crystal taking device, is suitable for the crystal taking operation of the single crystal silicon rods with various diameters, and has good crystal taking effect, high working efficiency, strong practicability and easy popularization.

The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.