CVD equipment for manufacturing HIT solar cell, complete set of CVD equipment and film coating method
阅读说明:本技术 用于制造hit太阳能电池的cvd设备、成套cvd设备及镀膜方法 (CVD equipment for manufacturing HIT solar cell, complete set of CVD equipment and film coating method ) 是由 汪训忠 其他发明人请求不公开姓名 于 2019-09-27 设计创作,主要内容包括:本发明提供用于制造HIT太阳能电池的CVD设备、成套CVD设备及镀膜方法。所述CVD设备包括:加载腔,其配置成接收来自上料位的承载有硅片的托盘;多个CVD工艺腔,其配置成接收承载有硅片的托盘,并各自通过本征和掺杂CVD工艺依次在硅片的一面上沉积I/N型或I/P型非晶硅薄膜;卸载腔,其配置成接收承载有已完成所述本征和掺杂CVD工艺的硅片的托盘并将其传送至下料位,以从托盘下料硅片;以及传输腔,其与加载腔、多个CVD工艺腔和卸载腔连接且配置成接收来自加载腔或任一CVD工艺腔的承载有硅片的托盘,并将其对应传送至任一可用的CVD工艺腔或卸载腔。本发明能同腔沉积I/N型或I/P型非晶硅薄膜,并能有效提高设备集成度、降低自动化难度、缩小占地面积、提高设备产能。(The invention provides a CVD device, a CVD device set and a film coating method for manufacturing an HIT solar cell. The CVD apparatus includes: a loading chamber configured to receive a tray carrying silicon wafers from a loading position; a plurality of CVD process chambers configured to receive a tray carrying a silicon wafer and to sequentially deposit an I/N type or I/P type amorphous silicon thin film on one side of the silicon wafer by respective intrinsic and impurity-doped CVD processes; an unloading chamber configured to receive a tray carrying silicon wafers having completed the native and doping CVD processes and convey them to a discharge position to discharge the silicon wafers from the tray; and the transfer cavity is connected with the loading cavity, the plurality of CVD process cavities and the unloading cavity and is configured to receive the tray carrying the silicon wafers from the loading cavity or any CVD process cavity and correspondingly transfer the tray to any available CVD process cavity or any unloading cavity. The invention can deposit I/N type or I/P type amorphous silicon film in the same cavity, and can effectively improve the integration level of equipment, reduce the automation difficulty, reduce the occupied area and improve the productivity of the equipment.)
1. A CVD apparatus for fabricating a heterojunction solar cell, the CVD apparatus comprising:
a loading chamber configured to receive a tray carrying silicon wafers from a loading position;
a plurality of CVD process chambers configured to receive the tray loaded with the silicon wafer and to sequentially deposit an I/N type or I/P type amorphous silicon thin film on one side of the silicon wafer through an intrinsic CVD process and a doping CVD process, respectively;
an unloading chamber configured to receive the tray carrying the silicon wafers having completed the intrinsic CVD process and the impurity-doped CVD process and transfer them to a discharge position to discharge the silicon wafers from the tray; and
and the conveying cavity is connected with the loading cavity, the plurality of CVD process cavities and the unloading cavity and is configured to receive the tray which is loaded with the silicon wafer and comes from any one of the loading cavity or the plurality of CVD process cavities and correspondingly convey the tray to any available CVD process cavity or the unloading cavity.
2. The CVD apparatus of claim 1, wherein the CVD apparatus comprises a PECVD apparatus and a HWCVD apparatus, and the loading chamber is further provided with a preheating module configured to preheat the silicon wafer to a temperature in the range of 25-250 ℃ before the silicon wafer enters any available process chamber of the plurality of CVD process chambers; the plurality of CVD process chambers also have a cleaning function capable of cleaning the chambers themselves and the empty trays introduced therein.
3. The CVD apparatus of claim 1 or 2, wherein the plurality of CVD process chambers are each configured to: heating the silicon wafer to a preset film forming temperature, providing gas required by the intrinsic CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit an I-type amorphous silicon film on one surface of the silicon wafer; providing gas required for the doping CVD process and decomposing the gas by using PECVD plasma or thermally dissociating the gas by using HWCVD so as to deposit the N-type or P-type amorphous silicon film on the I-type amorphous silicon film and form an I/N-type or I/P-type amorphous silicon film; the preset film forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required by the intrinsic CVD process comprises silane or silane and hydrogen, and the gas required by the doped CVD process comprises silane or silane and hydrogen, and also comprises phosphine, diborane or trimethylboron.
4. The CVD apparatus according to claim 1 or 2, wherein the CVD apparatus comprises a single-layer apparatus unit and a multi-layer apparatus unit, the single-layer apparatus unit comprising the loading chamber, the transfer chamber, the plurality of CVD process chambers and the unloading chamber in the same horizontal layer; the multilayer equipment unit comprises a plurality of single-layer equipment units which are correspondingly stacked along the vertical direction, and the multilayer equipment unit comprises a multilayer loading cavity, a multilayer transmission cavity, a plurality of multilayer CVD process cavities and a plurality of multilayer unloading cavities which are respectively and correspondingly integrated into a loading cavity vertical column, a transmission cavity vertical column, a plurality of CVD process cavity vertical columns and an unloading cavity vertical column; the CVD apparatus further comprises a tray pass-back device configured to transfer an empty tray from the loading position to the unloading position, wherein the silicon wafer is placed into the tray at the loading position, and the silicon wafer is taken out of the tray at the unloading position to obtain the empty tray.
5. A CVD kit for fabricating a heterojunction solar cell for depositing a first amorphous silicon thin film selected from the group consisting of I/N type and I/P type amorphous silicon thin films and a second amorphous silicon thin film different from the first amorphous silicon thin film on a first side and a second side of a silicon wafer, respectively, the CVD kit comprising:
a first CVD apparatus according to any one of claims 1 to 4, the first CVD apparatus comprising a first loading chamber, a first transporting chamber, a plurality of first CVD process chambers and a first unloading chamber, each of the first CVD process chambers being configured to receive a tray carrying a silicon wafer and to deposit the first amorphous silicon thin film selected from the group consisting of I/N type and I/P type amorphous silicon thin films on the first side of the silicon wafer by a first intrinsic CVD process and an N-type or P-type doping CVD process in sequence;
a silicon wafer turning device configured to receive the silicon wafer, a first side of which has finished deposition and is blanked, from a first unloading chamber of the first CVD apparatus, and turn the silicon wafer so that the first side of the silicon wafer is exchanged with a second side opposite to the first side; and
a second CVD apparatus according to any one of claims 1 to 4, the second CVD apparatus being configured to receive the tray carrying the silicon wafer flipped over by the wafer flipping device, the second CVD apparatus comprising a second loading chamber, a second transporting chamber, a plurality of second CVD process chambers and a second unloading chamber, each of the second CVD process chambers being configured to receive the tray carrying the flipped-over silicon wafer and to sequentially deposit the second amorphous silicon thin film selected from the group consisting of I/N type and I/P type amorphous silicon thin films on the second side of the silicon wafer by a second intrinsic CVD process and a P-type or N-type doping CVD process.
6. The CVD tool set of claim 5, wherein the first CVD process chamber or the second CVD process chamber for depositing the I/N type amorphous silicon thin film is configured to: heating the silicon wafer to a preset film forming temperature, providing gas required by the first or second intrinsic CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit an I-type amorphous silicon film on the first surface of the silicon wafer; providing gas required for carrying out an N-type doping CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit an N-type amorphous silicon film on the first surface and form the I/N-type amorphous silicon film; wherein the preset film forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the first or second intrinsic CVD process comprises silane or silane and hydrogen, and the gas required for performing the N-type doped CVD process comprises silane or silane and hydrogen and also comprises phosphane.
7. The CVD tool set of claim 5, wherein the first CVD process chamber or the second CVD process chamber for depositing the I/P type amorphous silicon thin film is configured to: heating the silicon wafer to the preset film forming temperature, providing gas required by the first or second intrinsic CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit an I-type amorphous silicon film on the second surface of the silicon wafer; providing gas required for carrying out a P-type doping CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit a P-type amorphous silicon film on the second surface and form the I/P-type amorphous silicon film; wherein the preset film forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the first or second intrinsic CVD process comprises silane or silane and hydrogen, the gas required for performing the P-type doped CVD process comprises silane or silane and hydrogen, and further comprises diborane or trimethyl boron; the first CVD process chamber or the second CVD process chamber on which the I/P type amorphous silicon thin film is deposited is further configured to perform a boron removal device capable of removing boron contamination.
8. A coating method for a CVD apparatus kit for manufacturing a heterojunction solar cell, the CVD apparatus kit comprising a first CVD apparatus, a silicon wafer turning device and a second CVD apparatus, the method comprising the steps of:
(a) receiving, by a first load chamber of the first CVD apparatus, a tray bearing silicon wafers from a first loading level;
(b) receiving the tray which is from the first loading cavity and bears the silicon wafer by a first transmission cavity of the first CVD equipment, and correspondingly conveying the tray to any available first CVD process cavity in a plurality of first CVD process cavities;
(c) sequentially depositing a first amorphous silicon film selected from I/N type and I/P amorphous silicon films on the first surface of the silicon wafer by the first CVD process cavity through a first intrinsic CVD process and an N-type or P-type doping CVD process, and correspondingly conveying the tray bearing the silicon wafer with the first surface subjected to deposition to the first transmission cavity;
(d) receiving the tray loaded with the silicon wafer from the first CVD process chamber by the first transmission chamber, and correspondingly conveying the tray to a first unloading chamber of the first CVD equipment;
(e) receiving the tray which comes from the first conveying cavity and bears the silicon wafers by the first unloading cavity, and conveying the tray to a first blanking position of the first CVD equipment so as to blank the silicon wafers from the tray;
(f) receiving a blanked silicon wafer from a first blanking position of the first CVD equipment by a silicon wafer overturning device, overturning the silicon wafer to enable the first surface of the silicon wafer to be exchanged with a second surface opposite to the first surface, and conveying the overturned silicon wafer to a second loading position of the second CVD equipment for loading to a tray;
(g) receiving, by a second load chamber of the second CVD apparatus, the tray from the second loading position and carrying the flipped silicon wafer;
(h) receiving the tray loaded with the silicon wafer from the second loading cavity by a second transmission cavity of the second CVD equipment, and correspondingly conveying the tray to any available second CVD process cavity in a plurality of second CVD process cavities;
(i) depositing a second amorphous silicon film different from the first amorphous silicon film on the second surface of the silicon wafer in sequence by the second CVD process chamber through a second intrinsic CVD process and a P-type or N-type doping CVD process, and correspondingly conveying the tray carrying the silicon wafer of which the second surface is deposited to the second transmission chamber;
(j) receiving the tray loaded with the silicon wafer from the second CVD process chamber by the second transmission chamber, and conveying the tray to a second unloading chamber of the second CVD equipment; and
(k) receiving the tray which comes from the second transmission cavity and bears the silicon wafers by the second unloading cavity, and conveying the tray to a blanking position so as to blank the silicon wafers from the tray.
9. The plating method according to claim 8, wherein the step (c) comprises the steps of:
(c1) heating the silicon wafer to a preset film forming temperature by the first CVD process chamber;
(c2) providing a gas required for performing the first intrinsic CVD process from the first CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing a type I amorphous silicon thin film on the first side of the silicon wafer; and
(c3) providing a gas required for performing the N-type or P-type doping CVD process from the first CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing the first amorphous silicon thin film selected from the N-type and P-type amorphous silicon thin films on the first face;
wherein the preset film-forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the first intrinsic CVD process in the step (c2) comprises silane or silane and hydrogen, the gas required for performing the N-type doped CVD process in the step (c3) comprises silane or silane and hydrogen, and further comprises phosphane, and the gas required for performing the P-type doped CVD process comprises silane or silane and hydrogen, and further comprises diborane or trimethylboron.
10. The plating method according to claim 8, wherein the step (i) comprises the steps of:
(i1) heating the silicon wafer to the preset film forming temperature by the second CVD process chamber;
(i2) providing a gas required for performing the second intrinsic CVD process from the second CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing a type I amorphous silicon thin film on the second side of the silicon wafer; and
(i3) providing a gas required for performing the P-type or N-type doping CVD process from the second CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing the second amorphous silicon thin film selected from the N-type and P-type amorphous silicon thin films on the second face;
wherein the preset film-forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the second intrinsic CVD process in the step (i2) comprises silane or silane and hydrogen, the gas required for performing the N-type doped CVD process in the step (i3) comprises silane or silane and hydrogen, and further comprises phosphane, and the gas required for performing the P-type doped CVD process comprises silane or silane and hydrogen, and further comprises diborane or trimethylboron.
Technical Field
The invention relates to the field of solar cell manufacturing, in particular to CVD equipment, complete CVD equipment and a film coating method for manufacturing a heterojunction solar cell.
Background
The thin film/crystalline silicon heterojunction solar cell (hereinafter referred to as heterojunction solar cell, also called HIT or HJT or SHJ solar cell) belongs to the third-generation high-efficiency solar cell technology, combines the advantages of the first-generation crystalline silicon and the second-generation silicon thin film, has the characteristics of high conversion efficiency, low temperature coefficient and the like, particularly has the conversion efficiency of the double-sided heterojunction solar cell reaching more than 26 percent, and has wide market prospect.
The core process for producing the HIT solar cell is a double-sided I-type amorphous silicon thin film passivation and N, P doping technology, which is currently mainly implemented by a PECVD (Plasma Enhanced Chemical Vapor Deposition, abbreviated as PECVD) coating apparatus, and also implemented by a Hot Wire Chemical Vapor Deposition (Hot Wire CVD, abbreviated as HWCVD) (also called catalyst Chemical Vapor Deposition, abbreviated as CAT-CVD) coating apparatus.
The existing equipment capable of being used for large-scale mass production of HIT solar cells is provided with a film forming process cavity for 4 layers of amorphous silicon films of double-sided I and N, P respectively, and the film forming process cavities are arranged along a straight line or a U shape corresponding to four CVD process cavities, so that the equipment is low in integration level, complex in automation, high in cost, large in occupied area, low in relative productivity and low in cost performance. In addition, the conventional PECVD equipment needs to heat the corresponding silicon wafer to the range of 100-.
Therefore, how to provide a CVD apparatus and a coating technique capable of improving the integration level and the productivity of the apparatus has become an urgent technical problem to be solved in the industry.
Disclosure of Invention
In view of the above problems of the prior art, the present invention proposes a solution 1 of a CVD apparatus for manufacturing a heterojunction solar cell. In claim 1, the CVD apparatus comprises: a loading chamber configured to receive a tray carrying silicon wafers from a loading position; a plurality of CVD process chambers configured to receive the tray loaded with the silicon wafer and to sequentially deposit an I/N type or I/P type amorphous silicon thin film on one side of the silicon wafer through an intrinsic CVD process and a doping CVD process, respectively; an unloading chamber configured to receive the tray carrying the silicon wafers having completed the intrinsic CVD process and the impurity-doped CVD process and transfer them to a discharge position to discharge the silicon wafers from the tray; and the conveying cavity is connected with the loading cavity, the plurality of CVD process cavities and the unloading cavity and is configured to receive the tray which is loaded with the silicon wafer and comes from any one of the loading cavity or the plurality of CVD process cavities and correspondingly convey the tray to any available CVD process cavity or the unloading cavity.
The invention also provides the CVD apparatus according to claim 2 of claim 1, wherein the CVD apparatus comprises a PECVD apparatus and a HWCVD apparatus.
The invention also provides a CVD apparatus according to claim 3, wherein a preheating module is further provided in the loading chamber, and the preheating module is configured to preheat the silicon wafer to a temperature in the range of 25-250 ℃ before the silicon wafer enters any available process chamber of the plurality of CVD process chambers.
The invention also provides the CVD apparatus according to claim 1, wherein the plurality of CVD process chambers further have a cleaning function of cleaning the chamber itself and an empty tray introduced therein.
The present invention also provides the CVD apparatus according to claim 5 of claim 1, wherein the plurality of CVD process chambers are each configured to: heating the silicon wafer to a preset film forming temperature, providing gas required by the intrinsic CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit an I-type amorphous silicon film on one surface of the silicon wafer; and providing gas required for the doping CVD process, decomposing the gas by using PECVD plasma or thermally dissociating the gas by using HWCVD, thereby depositing the N-type or P-type amorphous silicon film on the I-type amorphous silicon film and forming the I/N-type or I/P-type amorphous silicon film.
The invention also provides a 6 th technical scheme of the CVD apparatus according to the 5 th technical scheme, wherein the preset film forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for carrying out the intrinsic CVD process comprises silane or silane and hydrogen, and the gas required for carrying out the doped CVD process comprises silane or silane and hydrogen, and also comprises phosphane or diborane or trimethylboron.
The present invention also provides the CVD apparatus according to claim 7 of claim 1, wherein the CVD apparatus comprises a single-layer apparatus unit and a multi-layer apparatus unit, the single-layer apparatus unit comprising the loading chamber, the transfer chamber, the plurality of CVD process chambers, and the unloading chamber in the same horizontal layer; the multilayer equipment unit comprises a plurality of single-layer equipment units which are correspondingly stacked along the vertical direction, the multilayer equipment unit comprises a multilayer loading cavity, a multilayer transmission cavity, a plurality of multilayer CVD process cavities and a plurality of multilayer unloading cavities, and the multilayer loading cavity, the multilayer transmission cavity, the plurality of multilayer CVD process cavities and the plurality of multilayer unloading cavities are respectively and integrally constructed into a loading cavity vertical column, a transmission cavity vertical column, a plurality of CVD process cavity vertical columns and an unloading cavity vertical column.
The invention also provides the CVD apparatus according to claim 8, wherein the CVD apparatus further comprises a tray pass-back device configured to transfer an empty tray from the loading position to the unloading position, wherein the silicon wafers are placed into the trays at the loading position, and the silicon wafers are taken out of the trays at the unloading position to obtain the empty tray.
The invention also provides a 9 th technical scheme of the set of CVD equipment for manufacturing the heterojunction solar cell, wherein the set of CVD equipment is used for respectively depositing a first amorphous silicon thin film selected from the I/N type amorphous silicon thin film and the I/P type amorphous silicon thin film and a second amorphous silicon thin film different from the first amorphous silicon thin film on the first surface and the second surface of the silicon wafer; the CVD apparatus set comprises: a first CVD apparatus according to any of the above technical solutions, wherein the first CVD apparatus comprises a first loading chamber, a first transporting chamber, a plurality of first CVD process chambers and a first unloading chamber, each of the first CVD process chambers is configured to receive a tray carrying a silicon wafer and sequentially deposit the first amorphous silicon thin film selected from the group consisting of I/N type and I/P type amorphous silicon thin films on the first surface of the silicon wafer through a first intrinsic CVD process and an N-type or P-type doping CVD process; a silicon wafer turning device configured to receive the silicon wafer, a first side of which has finished deposition and is blanked, from a first unloading chamber of the first CVD apparatus, and turn the silicon wafer so that the first side of the silicon wafer is exchanged with a second side opposite to the first side; and a second CVD apparatus according to any of the above embodiments, the second CVD apparatus being configured to receive the tray carrying the silicon wafer flipped over by the wafer flipping device, the second CVD apparatus including a second loading chamber, a second transport chamber, a plurality of second CVD process chambers and a second unloading chamber, each of the second CVD process chambers being configured to receive the tray carrying the flipped-over silicon wafer and sequentially deposit a second amorphous silicon thin film selected from the group consisting of I/N type and I/P type amorphous silicon thin films on the second side of the silicon wafer by a second intrinsic CVD process and a P-type or N-type doped CVD process.
The invention also provides a 10 th technical solution of the complete set of CVD equipment according to the 9 th technical solution, wherein the CVD equipment comprises PECVD equipment and HWCVD equipment.
The invention also provides the 11 th technical solution of the set of CVD equipment according to the 9 th technical solution, wherein the first loading chamber and the second loading chamber are each provided with a preheating module configured to preheat the silicon wafer to a temperature in the range of 25-250 ℃ before the silicon wafer enters any available first CVD process chamber or second CVD process chamber.
The invention also provides a 12 th technical scheme of the complete set of CVD equipment according to the 9 th technical scheme, wherein the first CVD process chamber and the second CVD process chamber also have a cleaning function of cleaning the chamber body and an empty tray entering the chamber body.
The invention also provides the 13 th technical solution of the set of CVD equipment according to the 9 th technical solution, wherein the first CVD process chamber or the second CVD process chamber for depositing the I/N type amorphous silicon thin film is configured to: heating the silicon wafer to a preset film forming temperature, providing gas required by the first or second intrinsic CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit an I-type amorphous silicon film on the first surface of the silicon wafer; providing gas required for carrying out an N-type doping CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit an N-type amorphous silicon film on the first surface and form the I/N-type amorphous silicon film; wherein the preset film forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the first or second intrinsic CVD process comprises silane or silane and hydrogen, and the gas required for performing the N-type doped CVD process comprises silane or silane and hydrogen and also comprises phosphane.
The invention also provides the 14 th technical solution of the set of CVD equipment according to the 9 th technical solution, wherein the first CVD process chamber or the second CVD process chamber for depositing the I/P type amorphous silicon thin film is configured to: heating the silicon wafer to the preset film forming temperature, providing gas required by the first or second intrinsic CVD process, decomposing the gas by using PECVD plasma or thermally dissociating the gas by using HWCVD so as to deposit an I-type amorphous silicon film on the second surface; providing gas required for carrying out a P-type doping CVD process, decomposing the gas by utilizing PECVD plasma or thermally dissociating the gas by utilizing HWCVD so as to deposit a P-type amorphous silicon film on the second surface and form the I/P-type amorphous silicon film; wherein the preset film forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the first or second intrinsic CVD process comprises silane or silane and hydrogen, and the gas required for performing the P-type doped CVD process comprises silane or silane and hydrogen, and further comprises diborane or trimethyl boron.
The invention also provides the 15 th technical means of the set of CVD equipment according to the 9 th technical means, wherein the first CVD process chamber or the second CVD process chamber in which the I/P type amorphous silicon thin film is deposited is further configured to perform a boron removal device capable of removing boron contamination.
The invention also provides a 16 th technical scheme of a coating method for a set of CVD equipment for manufacturing the heterojunction solar cell, wherein the set of CVD equipment comprises first CVD equipment, a silicon wafer turnover device and second CVD equipment, and the method comprises the following steps: (a) receiving, by a first load chamber of the first CVD apparatus, a tray bearing silicon wafers from a first loading level; (b) receiving the tray which is from the first loading cavity and bears the silicon wafer by a first transmission cavity of the first CVD equipment, and correspondingly conveying the tray to any available first CVD process cavity in a plurality of first CVD process cavities; (c) sequentially depositing a first amorphous silicon film selected from I/N type and I/P type amorphous silicon films on the first surface of the silicon wafer by the first CVD process cavity through a first intrinsic CVD process and an N-type or P-type doping CVD process, and correspondingly conveying the tray bearing the silicon wafer with the first surface subjected to deposition to the first transmission cavity; (d) receiving the tray loaded with the silicon wafer from the first CVD process chamber by the first transmission chamber, and correspondingly conveying the tray to a first unloading chamber of the first CVD equipment; (e) receiving the tray which comes from the first conveying cavity and bears the silicon wafers by the first unloading cavity, and conveying the tray to a first blanking position of the first CVD equipment so as to blank the silicon wafers from the tray; (f) receiving a blanked silicon wafer from a first blanking position of the first CVD equipment by a silicon wafer overturning device, overturning the silicon wafer to enable the first surface of the silicon wafer to be exchanged with a second surface opposite to the first surface, and conveying the overturned silicon wafer to a second loading position of the second CVD equipment for loading to a tray; (g) receiving, by a second load chamber of the second CVD apparatus, the tray from the second loading position and carrying the flipped silicon wafer; (h) receiving the tray loaded with the silicon wafer from the second loading cavity by a second transmission cavity of the second CVD equipment, and correspondingly conveying the tray to any available second CVD process cavity in a plurality of second CVD process cavities; (i) sequentially depositing a second amorphous silicon film selected from I/N type and I/P type amorphous silicon films on the second surface of the silicon wafer by the second CVD process cavity through a second intrinsic CVD process and a P type or N type doping CVD process, and correspondingly conveying the tray bearing the deposited silicon wafer to the second transmission cavity, wherein the second amorphous silicon film is different from the first amorphous silicon film; (j) receiving the tray loaded with the silicon wafer from the second CVD process chamber by the second transmission chamber, and conveying the tray to a second unloading chamber of the second CVD equipment; receiving the tray which comes from the second transmission cavity and bears the silicon wafers by the second unloading cavity, and conveying the tray to a blanking position so as to blank the silicon wafers from the tray.
The invention also provides the 17 th technical means of the plating method according to the 16 th technical means, wherein the step (c) comprises the following steps: (c1) heating the silicon wafer to a preset film forming temperature by the first CVD process chamber; (c2) providing a gas required for performing the first intrinsic CVD process from the first CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing a type I amorphous silicon thin film on the first side of the silicon wafer; providing a gas required for the N-type or P-type doping CVD process from the first CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing the first amorphous silicon thin film selected from the N-type and P-type amorphous silicon thin films on the first side; wherein the preset film-forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the first intrinsic CVD process in the step (c2) comprises silane or silane and hydrogen, the gas required for performing the N-type doped CVD process in the step (c3) comprises silane or silane and hydrogen, and further comprises phosphane, and the gas required for performing the P-type doped CVD process comprises silane or silane and hydrogen, and further comprises diborane or trimethylboron.
The invention also provides an 18 th technical means of the plating method according to the 16 th technical means, wherein the step (i) comprises the steps of: (i1) heating the silicon wafer to the preset film forming temperature by the second CVD process chamber; (i2) providing a gas required for performing the second intrinsic CVD process from the second CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing a type I amorphous silicon thin film on the second side of the silicon wafer; providing a gas required for performing the P-type doping CVD process from the second CVD process chamber and decomposing it using PECVD plasma or thermally dissociating it using HWCVD, thereby depositing the second amorphous silicon thin film selected from the N-type and P-type amorphous silicon thin films on the second face; wherein the preset film-forming temperature of the silicon wafer is within the range of 100-300 ℃, the gas required for performing the second intrinsic CVD process in the step (i2) comprises silane or silane and hydrogen, the gas required for performing the N-type doped CVD process in the step (i3) comprises silane or silane and hydrogen, and further comprises phosphane, and the gas required for performing the P-type doped CVD process comprises silane or silane and hydrogen, and further comprises diborane or trimethylboron.
The invention also provides a 19 th technical means of the plating method according to the 16 th technical means, wherein the method further comprises the following steps before the step (a): (a0) placing the silicon wafer into a tray at a first loading position of the first CVD apparatus.
The invention also provides the 20 th technical solution of the plating method according to the 16 th technical solution, wherein the method further comprises the following steps before the step (g): (g0) placing the flipped wafer into a tray at a second loading position of the second CVD apparatus.
The present invention also provides the 21 st aspect of the plating method according to the 16 th aspect, wherein the method further comprises, at the steps (e) and (f): (e1) receiving the tray loaded with the silicon wafers from the first unloading cavity at a first unloading position of the first CVD device, and taking the silicon wafers out of the tray to obtain an empty tray; (e2) returning, by a first tray return device of the first CVD apparatus, the empty tray from the first lower level to the first upper level.
The invention also provides the 22 nd technical means of the plating method according to the 16 th technical means, wherein the method further comprises, after the step (k): (k1) receiving the tray loaded with the silicon wafers from the second unloading cavity at a second unloading position of the second CVD equipment, and taking the silicon wafers out of the tray to obtain an empty tray; (k2) returning, by a second tray return device of the second CVD apparatus, the empty tray from the second blanking level to the second loading level.
Compared with the prior art, the invention has the following beneficial effects: according to the CVD equipment and the film coating method, the first CVD process cavity and the second CVD process cavity are used for depositing different first amorphous silicon films and second amorphous silicon films selected from I/N type amorphous silicon films and I/P type amorphous silicon films on the first surface and the second surface of the silicon wafer in sequence, so that 4 CVD process cavities for depositing the I/N/I/P type amorphous silicon films can be avoided being respectively configured, in addition, all the multiple layers of cavities are vertically stacked and integrally constructed into all the cavities in a vertical row, the integration level of the equipment is effectively improved, the occupied area is reduced, automatic equipment is reduced, the silicon wafer transmission link is reduced, the productivity and the yield are greatly improved, the equipment competitiveness is improved, and the first CVD process cavity or the second CVD process cavity for depositing the I/P type amorphous silicon films can effectively prevent cross contamination caused by boron through a boron removal process; the CVD equipment can also preheat the silicon wafer through the loading cavity, and can avoid the preheating in the first CVD process cavity and the second CVD process cavity for too long time, thereby effectively shortening the time of the silicon wafer staying in the first CVD process cavity and effectively improving the efficiency and the productivity of the CVD equipment.
Drawings
The above features and advantages of the present disclosure will be better understood upon reading the detailed description of embodiments of the disclosure in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components having similar relative characteristics or features may have the same or similar reference numerals.
FIG. 1 is a schematic structural diagram of a CVD apparatus for fabricating a heterojunction solar cell according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of an embodiment of the CVD apparatus set for fabricating a heterojunction solar cell of the present invention;
FIG. 3 is a flow chart of a first embodiment of the coating method of the CVD apparatus set for manufacturing a heterojunction solar cell of the present invention;
fig. 4 is a flow chart of a second embodiment of the coating method of the CVD kit for manufacturing a heterojunction solar cell according to the invention.
Detailed description of the preferred embodiments
The invention will be described in detail below with reference to the accompanying drawings and specific embodiments so that the objects, features and advantages of the invention can be more clearly understood. It should be understood that the aspects described below in connection with the figures and the specific embodiments are exemplary only, and should not be construed as limiting the scope of the invention in any way. The singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. As used in this specification and the appended claims, the terms "first," "second," and the like do not denote any order, quantity, or importance, but rather are used to distinguish one element from another.
As used in the specification and claims, the "I/P type amorphous silicon thin film" and the "I/N type amorphous silicon thin film" do not mean the "I type or P type amorphous silicon thin film" or the "I type or N type amorphous silicon thin film", but mean the "I type and P type amorphous silicon thin film" or the "I type and N type amorphous silicon thin film".
Referring to fig. 1, which shows a schematic structural diagram of an embodiment of the CVD apparatus for manufacturing a heterojunction solar cell of the present invention, the CVD apparatus 1 includes a
The CVD apparatus 1 further comprises a transfer device (mostly disposed in the transfer chamber 12) for transferring silicon wafers to and from the chambers, a loading device for placing silicon wafers from the flower basket into corresponding brackets of the tray at the
The CVD equipment 1 can comprise a single-layer equipment unit and a multi-layer equipment unit, wherein the composition structure of the single-layer equipment unit is exemplarily shown in FIG. 1, and the single-layer equipment unit comprises a
The CVD apparatus 1 may further comprise a tray return device (not shown) for transferring empty trays at the
Referring to fig. 1, a
The
The plurality of
The preset film forming temperature of the silicon wafer is within the range of 100-300 ℃, and the gas required by the intrinsic CVD process comprises silane or silane and hydrogen; the doping CVD process comprises an N-type doping CVD process and a P-type doping CVD process, wherein gases required by the N-type doping CVD process comprise silane or silane and hydrogen, and also comprise phosphine or other gases suitable for N-type doping; the gases required to perform the P-type doping CVD process include silane or silane and hydrogen, and further include diborane or trimethylboron or other gases suitable for P-type doping. In one embodiment, the intrinsic CVD process and the doped CVD process are both performed at 100-300 ℃.
The CVD apparatus 1 includes a plurality of
The plurality of
The unloading
Although one
Referring to fig. 2, there is shown the composition of an embodiment of the CVD kit of parts for manufacturing a heterojunction solar cell of the invention. The complete set of CVD equipment comprises a first CVD equipment 2, a second CVD equipment 3 and a silicon wafer turnover device 4 which are sequentially connected, wherein the first CVD equipment 2 and the second CVD equipment 3 are used for respectively depositing a first amorphous silicon film selected from I/N type and I/P type amorphous silicon films and a second amorphous silicon film different from the first amorphous silicon film on the first surface and the second surface of the silicon wafer. The structure and operation principle and process of the components of the first CVD apparatus 2 and the second CVD apparatus 3 are substantially the same as those of the CVD apparatus 1 shown in fig. 1 and described above, and for the specific embodiment thereof, the first CVD apparatus 2 and the second CVD apparatus 3 can be understood with reference to the CVD apparatus 1 shown in fig. 1 and described above. The first CVD apparatus 2 includes a
The first CVD apparatus 2 and the second CVD apparatus 3 each include a PECVD apparatus and a HWCVD apparatus, and the first and
The CVD apparatus set includes a single-layer set unit or a multi-layer set unit, and as shown in fig. 2, the single-layer set unit includes a first CVD apparatus 2, a second CVD apparatus 3, and a wafer reversing device 4, which are located substantially in the same horizontal layer. The multi-layer plant unit comprises a plurality of single-layer plant units correspondingly stacked in the vertical direction, and specifically, the multi-layer plant unit can comprise 5, 10, 15, 20, 30 single-layer plant units and the like, which are conceivable and practicable by those skilled in the art. The multilayer
The plurality of first
In the first embodiment of the kit, the first and second amorphous silicon films are I/N type and I/P type amorphous silicon films, respectively, each of the plurality of first
In the second embodiment of the kit, the first and second amorphous silicon films are I/P type and I/N type amorphous silicon films, respectively, each CVD process chamber of the plurality of first
Each of the first
Each of the first
In the first embodiment of the kit, each of the first
Each of the first
The wafer reversing device 4 is configured to receive the silicon wafer which is completely discharged at the first discharging
It should be noted that the second intrinsic CVD process performed in the second CVD process chamber 34 may be identical to the first intrinsic CVD process performed in the first
Each of the first
After the first
In some embodiments, the first CVD apparatus 2 and the second CVD apparatus 3 are PECVD apparatuses, and the corresponding plurality of first
As shown in FIG. 2, the silicon wafers are flowed along a flow path composed of a first loading position 20, a first loading chamber 21, a first transfer chamber 22, any available first CVD process chamber 24, a first transfer chamber 22, a first unloading chamber 26, a first unloading position 27, a silicon wafer turning device 4, a second loading position 30, a second loading chamber 31, a second transfer chamber 32, any available second CVD process chamber 34, a second transfer chamber 32, a second unloading chamber 36, and a second unloading position 37, while the tray for carrying the silicon wafers is flowed along a flow path composed of a first loading position 20, a first loading chamber 21, a first transfer chamber 22, any available first CVD process chamber 24, a first transfer chamber 22, a first unloading chamber 26, a first unloading position 27, a tray transfer device, and a first loading position 20 in the first CVD apparatus 2, while the tray for carrying the silicon wafers is flowed along a flow path composed of a second loading position 30, a second unloading position 27, a second unloading position 37, and a second unloading position 37, The second loading chamber 31, the second transfer chamber 32, any available second CVD process chamber 34, the second transfer chamber 32, the second unloading chamber 36, the second discharge level 37, the tray transfer device, and the second loading level 30.
In other embodiments, the silicon wafer may be sequentially circulated along the second CVD apparatus 3, the silicon wafer turning device 4, and the first CVD apparatus 2 in substantially the same way and manner as described above.
Referring to fig. 3, in combination with fig. 1 and 2, fig. 3 shows a flow chart of a first embodiment of the coating method of the CVD kit for manufacturing a heterojunction solar cell according to the invention. The complete set of CVD equipment comprises a first CVD equipment 2, a second CVD equipment 3 and a silicon wafer overturning device 4, and the detailed structure, characteristics and operation of each component of the first CVD equipment 2, the second CVD equipment 3 and the silicon wafer overturning device 4 can be understood by referring to the above and the figures 1 and 2. The complete set of CVD equipment comprises PECVD complete set, HWCVD complete set and the like.
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Fig. 4 shows a flow chart of a second exemplary embodiment of a coating method according to the invention for a CVD kit for producing a heterojunction solar cell, the
The greatest difference between the
The single coating method of the CVD apparatus for manufacturing the heterojunction solar cell in fig. 1 can be performed with reference to steps S300 to S390 or S410 to S490 in the
According to the CVD equipment and the film coating method, the first CVD process cavity and the second CVD process cavity are used for respectively depositing different first amorphous silicon films and second amorphous silicon films selected from I/N type amorphous silicon films and I/P type amorphous silicon films on the first surface and the second surface of the silicon wafer in sequence, 4 CVD process cavities can be prevented from being equipped for respectively depositing the I/N/I/P type amorphous silicon films, in addition, all the multiple layers of cavities are vertically stacked and integrally constructed into the vertical columns of all the cavities, so that the integration level of the equipment is effectively improved, the occupied area is reduced, automatic equipment is reduced, the silicon wafer transmission link is reduced, the productivity and the yield are greatly improved, the equipment competitiveness is improved, and the first CVD process cavity or the second CVD process cavity for depositing the I/P type amorphous silicon films can effectively prevent boron-related cross contamination through the boron removing device; the CVD equipment provided by the invention preheats the silicon wafer through the loading cavity, and can avoid the preheating in the first CVD process cavity and the second CVD process cavity for too long time, so that the time of the silicon wafer staying in the first CVD process cavity and the second CVD process cavity is effectively shortened, and the efficiency and the capacity of the CVD equipment can be effectively improved.
The embodiments described above are provided to enable persons skilled in the art to make or use the invention and that modifications or variations can be made to the embodiments described above by persons skilled in the art without departing from the inventive concept of the present invention, so that the scope of protection of the present invention is not limited by the embodiments described above but should be accorded the widest scope consistent with the innovative features set forth in the claims.
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