阅读说明：本技术 提高外延片发光均匀度的外延托盘 (Epitaxial tray for improving luminous uniformity of epitaxial wafer ) 是由 从颖 姚振 梅劲 于 2021-06-04 设计创作，主要内容包括：本公开公开了一种提高外延片发光均匀度的外延托盘,属于外延生长技术领域。在每相邻的两个凹槽圈之间增加一个同心的调整圈,调整圈包括的多个沿外延托盘的周向均匀分布的条形槽,条形槽内主要为空气,降低空白区域的传热效应,减小两个相邻的凹槽圈之间的空白区域会积累的热量,由此减小空白区域的温度对临近的凹槽圈内的圆形凹槽的影响。每个条形槽的长度方向均垂直于外延托盘的一条直径,条形槽构成的调整圈也接近环状,提高外延托盘整体的温度的一致性并由此提高外延片的发光均匀度与一致性。(The utility model discloses an improve epitaxial tray of epitaxial wafer luminous homogeneity belongs to epitaxial growth technical field. Increase a concentric adjusting ring between every two adjacent groove circles, a plurality of strip grooves along the circumference evenly distributed of epitaxial tray that the adjusting ring includes, the strip inslot mainly is the air, reduces the heat transfer effect in blank region, reduces the blank region heat that can accumulate between two adjacent groove circles, reduces the influence of the temperature in blank region to the circular recess in the groove circle that closes on from this. The length direction of each strip-shaped groove is perpendicular to the diameter of the epitaxial tray, and an adjusting ring formed by the strip-shaped grooves is also close to a ring shape, so that the temperature consistency of the whole epitaxial tray is improved, and the luminous uniformity and consistency of the epitaxial wafer are improved.)

1. An epitaxial tray is characterized in that the epitaxial tray is a cylinder, the end face of one end of the epitaxial tray is provided with a plurality of concentric groove rings, each groove ring comprises a plurality of circular grooves uniformly distributed along the circumferential direction of the epitaxial tray,

epitaxial tray still includes a plurality of concentric adjusting rings, every adjacent two all have one between the groove circle concentric adjusting ring, every adjusting ring includes a plurality of edges epitaxial tray's circumference evenly distributed's bar groove, every the length direction in bar groove all is perpendicular to epitaxial tray's a diameter.

2. The epitaxial tray according to claim 1, wherein one of the adjacent two grooved rings having a smaller diameter is a first grooved ring, the other grooved ring having a larger diameter is a second grooved ring, and an adjustment ring between the first grooved ring and the second grooved ring is a first adjustment ring,

the ratio of the minimum distance between the first adjusting ring and the second groove ring to the minimum distance between the first adjusting ring and the first groove ring is 1: 3-1: 6.

3. The epitaxial tray of claim 2, wherein the minimum distance between the first alignment ring and the second grooved ring is 10-40 μm and the minimum distance between the first alignment ring and the first grooved ring is 5-20 μm.

4. The epitaxial tray of claim 2, wherein the plurality of bar-shaped grooves included in the first adjusting ring and the plurality of circular grooves included in the second groove ring correspond one to one, and a connection line between the center of the epitaxial tray and each circular groove passes through the bar-shaped groove corresponding to the circular groove.

5. The extension tray according to any one of claims 1 to 4, wherein the length of the strip-shaped groove increases with the increase of the diameter of the plurality of adjustment rings in the radial direction of the extension tray.

6. The epitaxial tray according to any one of claims 1 to 4, wherein the minimum distance between two adjacent strip grooves is 5 to 15 μm.

7. The epitaxial tray according to any one of claims 1 to 4, wherein the ratio of the depth of the strip-shaped groove to the thickness of the epitaxial tray is 1: 800-1: 200.

8. the epitaxial tray according to claim 7, wherein the depth of the strip-shaped grooves is 20 to 80 μm.

9. The epitaxial tray according to any one of claims 1 to 4, wherein the length of the strip-shaped grooves is 15 to 60 μm.

10. The epitaxial tray according to any one of claims 1 to 4, wherein the width of the strip-shaped groove is 10 to 35 mm.

Technical Field

The disclosure relates to the technical field of epitaxial growth, in particular to an epitaxial tray for improving the luminous uniformity of an epitaxial wafer.

Background

The epitaxial tray is a part of Metal-organic Chemical Vapor Deposition (MOCVD) equipment, the epitaxial tray is a cylinder, a plurality of concentric groove rings are arranged on the end face of one end of the epitaxial tray, and each groove ring comprises a plurality of circular grooves which are uniformly distributed along the circumferential direction of the epitaxial tray. And the end face of the other end of the epitaxial tray is connected with a driving structure of the MOCVD equipment.

When the epitaxial wafer is prepared, the substrates are required to be correspondingly placed in each circular groove one by one, the substrates are supported on the bottom surfaces of the circular grooves, and reaction air flows in the reaction cavity act on the surfaces of the substrates to generate epitaxial materials and finally obtain the epitaxial wafer. But there is great blank region that does not have circular recess to exist between groove circle and the groove circle, and these blank regions can receive the lasting impact of air current, do not have the chemical reaction again and release the heat, and the heat in blank region can accumulate and lead to the temperature that the circular recess that closes to is close to blank region higher, leads to the uniformity and the uniformity of the epitaxial wafer that growth obtained on the circular recess inner substrate to be poor.

Disclosure of Invention

The embodiment of the disclosure provides an epitaxial tray for improving the luminous uniformity of an epitaxial wafer, which can improve the uniformity of an epitaxial material grown on a substrate so as to improve the luminous uniformity of the finally obtained epitaxial wafer. The technical scheme is as follows:

the embodiment of the disclosure provides an epitaxial tray for improving the luminous uniformity of an epitaxial wafer, the epitaxial tray is a cylinder, the end face of one end of the epitaxial tray is provided with a plurality of concentric groove rings, each groove ring comprises a plurality of circular grooves uniformly distributed along the circumferential direction of the epitaxial tray,

epitaxial tray still includes a plurality of concentric adjusting rings, every adjacent two all have one between the groove circle concentric adjusting ring, every adjusting ring includes a plurality of edges epitaxial tray's circumference evenly distributed's bar groove, every the length direction in bar groove all is perpendicular to epitaxial tray's a diameter.

Optionally, one of the two adjacent groove rings with a small diameter is used as a first groove ring, the other groove ring with a large diameter is used as a second groove ring, and an adjusting ring between the first groove ring and the second groove ring is used as a first adjusting ring,

the ratio of the minimum distance between the first adjusting ring and the second groove ring to the minimum distance between the first adjusting ring and the first groove ring is 1: 3-1: 6.

Optionally, the minimum distance between the first adjusting ring and the second groove ring is 10-40 μm, and the minimum distance between the first adjusting ring and the first groove ring is 5-20 μm.

Optionally, the plurality of bar-shaped grooves included in the first adjusting ring and the plurality of circular grooves included in the second groove ring correspond to each other one to one, and a connection line between the extension tray and a circle center of each circular groove passes through the bar-shaped groove corresponding to the circular groove.

Optionally, in a radial direction of the extension tray, the length of the strip-shaped groove increases with the increase of the diameter of the plurality of adjusting rings.

Optionally, the minimum distance between two adjacent strip-shaped grooves is 5-15 μm.

Optionally, a ratio of a depth of the strip-shaped groove to a thickness of the epitaxial tray is 1: 800-1: 200.

optionally, the depth of the strip-shaped groove is 20-80 μm.

Optionally, the length of the strip-shaped groove is 15-60 μm.

Optionally, the width of the strip-shaped groove is 10-35 mm.

The technical scheme provided by the embodiment of the disclosure has the following beneficial effects:

the end face of one end of the extension tray is provided with a plurality of concentric groove rings, and each groove ring comprises a plurality of circular grooves which are uniformly distributed along the circumferential direction of the extension tray. The substrates are placed in the circular grooves, and when the extension tray rotates, the reaction gas flow can be guaranteed to stably flow to the surface of the substrate for growth. Increase a concentric regulating collar between per two adjacent groove circles, a plurality of strip grooves along epitaxial tray's circumference evenly distributed that the regulating collar includes, can reduce the area of contact of blank region and air current between the groove circle, the strip inslot is mainly the air, this part can reduce the heat transfer effect of blank region, reduce the heat that blank region between two adjacent groove circles can accumulate, reduce the influence of the temperature of blank region to the circular recess in the groove circle that closes on from this, improve the uniformity of the holistic temperature of epitaxial tray, the temperature of the substrate of transferring to in the circular recess is also comparatively even, the quality of the epitaxial wafer that the growth obtained on the substrate is also comparatively even. And because the air current is blown in to the spiral in the reaction chamber, the position that blank region is heated is close the annular, the equal perpendicular to epitaxial tray's of length direction of every bar groove diameter, and the adjusting ring that the bar groove constitutes also is close cyclic annularly, can effectively reduce the influence of blank region's temperature to the circular recess that closes on, improves the holistic uniformity of temperature of epitaxial tray and improves the luminous degree of consistency and the uniformity of epitaxial wafer from this.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a top view of an epitaxial tray provided by embodiments of the present disclosure;

FIG. 2 is an enlarged view of a strip groove provided by embodiments of the present disclosure;

fig. 3 is a schematic structural diagram of an epitaxial tray provided in an embodiment of the present disclosure;

fig. 4 is a flowchart of a method for manufacturing an epitaxial wafer of a light emitting diode according to an embodiment of the present disclosure;

fig. 5 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present disclosure.

Detailed Description

To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," "third," and similar terms in the description and claims of the present disclosure are not intended to indicate any order, quantity, or importance, but rather are used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprise" or "comprises", and the like, means that the element or item listed before "comprises" or "comprising" covers the element or item listed after "comprising" or "comprises" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect at the other end. "upper", "lower", "left", "right", "top", "bottom", and the like are used merely to indicate relative positional relationships, which may also change accordingly when the absolute position of the object being described changes.

For the sake of understanding, the structure of the flat-edge substrate is first described herein, fig. 1 is a top view of an epitaxial tray provided by an embodiment of the present disclosure, and as can be seen from fig. 1, the embodiment of the present disclosure provides an epitaxial tray for improving the light emission uniformity of an epitaxial wafer, the epitaxial tray is a cylinder, an end surface of one end of the epitaxial tray has a plurality of concentric groove rings 1, and each groove ring 1 includes a plurality of circular grooves 101 uniformly distributed along the circumferential direction of the epitaxial tray.

The epitaxial tray also comprises a plurality of concentric adjusting rings 2, one concentric adjusting ring 2 is arranged between every two adjacent groove rings 1, each adjusting ring 2 comprises a plurality of strip-shaped grooves 201 which are uniformly distributed along the circumferential direction of the epitaxial tray, and the length direction of each strip-shaped groove 201 is perpendicular to one diameter of the epitaxial tray.

The end face of one end of the extension tray is provided with a plurality of concentric groove rings 1, and each groove ring 1 comprises a plurality of circular grooves 101 which are uniformly distributed along the circumferential direction of the extension tray. The substrates are placed in the circular grooves 101, and when the epitaxial tray rotates, the reaction gas flow can be guaranteed to stably flow to the surface of the substrate for growth. Increase a concentric regulating ring 2 between every two adjacent groove circles 1, a plurality of strip grooves 201 along epitaxial tray's circumference evenly distributed that regulating ring 2 includes, can reduce the area of contact of blank region and air current between groove circle 1, mainly be the air in strip groove 201, this part can reduce the heat transfer effect in blank region, reduce the heat that the blank region between two adjacent groove circles 1 can accumulate, reduce the influence of the temperature of blank region to the circular recess 101 in the groove circle 1 that closes to from this, improve the holistic uniformity of temperature of epitaxial tray, the temperature of the substrate of transferring to in the circular recess 101 is also comparatively even, the quality of the epitaxial wafer that the growth obtained on the substrate is also comparatively even. And because the air current is blown in to the reaction intracavity by the spiral, the position that blank region is heated is close the annular, and the equal perpendicular to diameter of epitaxial tray of length direction of every bar groove 201, and the adjusting ring 2 that bar groove 201 constitutes also is close cyclic annularly, can effectively reduce the influence of the temperature in blank region to the circular recess 101 that closes on, improves the holistic uniformity of temperature of epitaxial tray and improves the luminous degree of consistency and the uniformity of epitaxial wafer from this.

And in fact, the uniformity of the temperature of the substrate in a single circular groove 101 can be improved, and the growth uniformity of the substrate in all circular grooves 101 on the epitaxial tray can also be improved to a certain extent. The uniformity of all epitaxial wafers grown on the epitaxial tray is ensured to be relatively close, and the epitaxial wafers with relatively consistent luminosity in the same batch can be produced conveniently.

It should be noted that the temperature of the substrate has a direct influence on the thickness of the epitaxial material, the thickness of the epitaxial material deposited at a high temperature is large when the epitaxial material is deposited quickly, and the thickness of the epitaxial material deposited at a low temperature is small when the epitaxial material is deposited slowly, so that the thickness of the epitaxial material deposited on the substrate is uniform and the light emission is uniform when the temperature of the substrate is uniform. For the light emitting layer partially comprising the In component, the In component is more uniformly distributed under the condition of uniform temperature, and when the In component is uniformly distributed, the light emitting diode also uniformly emits light, so that the substrate temperature is uniform, and the consistency of the wavelength of the emitted light can be improved.

It should be noted that, in the implementation manner provided by the present disclosure, the circle centers of the groove ring 1 and the adjusting ring 2 are both the circle centers of one end surface of the epitaxial tray.

In one implementation provided by the present disclosure, the number of groove rings 1 may be 2-5. The present disclosure is not so limited.

Illustratively, the length of the strip-shaped groove 201 may be smaller than the diameter of the circular groove 101.

The length of bar groove 201 is less than the diameter of circular recess 101, when can effectively reduce the heat of blank region accumulation, guarantees the holistic use intensity of epitaxial tray, guarantees epitaxial material's stable growth.

Alternatively, in the radial direction of the epitaxial pallet, the length of the strip-shaped groove 201 increases as the diameter of the plurality of adjustment loops 2 increases.

Because the area of the blank area of the extension tray is larger closer to the edge part of the extension tray, the length of the strip-shaped groove 201 changes along with the increase of the diameter of the plurality of adjusting rings 2 in the radial direction of the extension tray, the influence of air flow and heat on the blank area of the edge part of the extension tray can be reduced, and the integral uniformity of the extension tray is effectively improved.

In one implementation provided by the present disclosure, the length of the strip-shaped groove 201 may increase linearly or in a step-like manner as the diameter of the plurality of adjustment loops 2 increases. The control can be easily carried out, and the quality of the epitaxial wafer obtained by growth is better, which is not limited by the disclosure.

Alternatively, in the radial direction of the epitaxial pallet, the width of the strip-shaped groove 201 increases as the diameter of the plurality of adjustment rings 2 increases.

Because the area that is the blank region of extension tray is bigger more to the marginal part that is closer to extension tray then, consequently in the footpath of extension tray, the width of bar groove 201 takes place above-mentioned change along with the increase of the diameter of a plurality of adjusting ring 2, can reduce the air current that the marginal part of extension tray can receive and thermal influence, effectively improves the holistic degree of consistency of extension tray.

The radial direction of the extension tray is a direction along a certain diameter of the extension tray, and the edge portion of the extension tray is an edge of an end face of the extension tray.

In one implementation provided by the present disclosure, the width of the strip-shaped groove 201 may increase linearly or in a step-like manner as the diameter of the plurality of adjustment loops 2 increases. The control can be easily carried out, and the quality of the epitaxial wafer obtained by growth is better, which is not limited by the disclosure.

It should be noted that the diameters mentioned in the embodiments of the present disclosure are the maximum diameters through the center of the circle.

Illustratively, the orthographic projection of the strip-shaped groove 201 on the end face of the epitaxial tray is an ellipse.

The bar-shaped groove 201 is of a structure similar to an ellipse, so that the use strength of the finally obtained epitaxial tray is better while the heat accumulated in the blank area can be effectively reduced.

It should be noted that, in other implementations provided by the present disclosure, an orthographic projection of the strip-shaped groove 201 on the end face of the epitaxial tray may also be rectangular or shuttle-shaped, which is not limited by the present disclosure.

Optionally, the length of the strip-shaped groove 201 is 15-60 μm.

The length of the strip-shaped groove 201 is within the above range, so that the heat accumulated in the blank area can be effectively reduced, and the quality of the finally obtained epitaxial tray is ensured to be better.

In other implementations provided by the present disclosure, the length of the strip-shaped groove 201 may also be 15 to 50 μm. The overall use strength of the extension tray can be further improved while the heat accumulated in the blank area is effectively reduced.

Illustratively, the width of the strip-shaped groove 201 is 10-35 mm.

The width of the strip-shaped groove 201 is within the above range, so that the heat accumulated in the blank area can be effectively reduced, and the quality of the finally obtained epitaxial tray is ensured to be better.

In other implementations provided by the present disclosure, the width of the strip-shaped groove 201 may also be 10-35 mm. The overall use strength of the extension tray can be further improved while the heat accumulated in the blank area is effectively reduced.

Optionally, the minimum distance between two adjacent strip-shaped grooves 201 is 5-15 μm.

The minimum distance between two adjacent bar grooves 201 is in above scope, can guarantee that the region that does not arrange bar groove 201 in the blank region is less relatively, and bar groove 201 itself can effectively reduce under the thermal prerequisite of blank region accumulation, and the minimum distance between adjacent bar groove 201 also can not cause too big influence to the heat and the temperature of circular recess 101 in above scope.

Referring to fig. 1, of two adjacent grooved rings 1, one grooved ring 1 with a small diameter is used as a first grooved ring, the other grooved ring 1 with a large diameter is used as a second grooved ring, and an adjusting ring 2 between the first grooved ring and the second grooved ring is used as a first adjusting ring. The ratio of the minimum distance between the first adjusting ring and the second groove ring to the minimum distance between the first adjusting ring and the first groove ring is 1: 3-1: 6.

Taking the example of adjacent first and second grooved rings, the first adjustment ring between the first and second grooved rings may be located in a blank area closer to the larger diameter second grooved ring, reducing the likelihood that the more susceptible second grooved ring will be affected. And when the ratio of the minimum distance between the first adjusting ring and the second groove ring to the minimum distance between the first adjusting ring and the first groove ring is in the above range, the quality of the circular groove 101 in the first groove ring and the second groove ring can be ensured not to be influenced by the strip-shaped groove 201, and the normal use strength of the circular groove 101 is ensured. Meanwhile, the influence of the heat of the blank area on the second groove ring can be reduced to the maximum extent.

It should be noted that, because the reaction gas flow in the reaction chamber is spirally blown onto the surface of the epitaxial tray, the linear velocity of the reaction gas flow in the region near the edge of the end surface of the epitaxial tray is relatively high, and the reaction gas flow with relatively high linear velocity has a relatively large influence on the blank region near the edge region of the end surface of the epitaxial tray, the strip-shaped groove 201 is closer to the second groove ring with relatively large diameter, and the edge region of the strip-shaped groove 201 closer to the end surface of the epitaxial tray can also be controlled, so that the influence of the blank region on the temperature of the circular groove 101 can be more effectively reduced, and the growth uniformity and the light-emitting uniformity of the finally obtained epitaxial wafer are improved.

It should be noted that the minimum distance between the first adjusting ring and the second groove ring is the minimum distance between the strip-shaped groove 201 included in the first adjusting ring and the circular groove 101 included in the second groove ring; the minimum distance between the first adjusting ring and the first groove ring is the minimum distance between the strip-shaped groove 201 included in the first adjusting ring and the circular groove 101 included in the first groove ring.

It should be noted that the first groove ring, the second groove ring and the first adjustment ring provided in the present disclosure may be any two adjacent groove rings 1 on the extension tray and the adjustment ring 2 between the two groove rings 1 in the present disclosure. The distinction of names is made here only for ease of understanding, and thus the first race ring, the second race ring and the first adjustment ring are not separately distinguished or identified in fig. 1.

Optionally, the minimum distance between the first adjusting ring and the second groove ring is 10-40 μm, and the minimum distance between the first adjusting ring and the first groove ring is 5-20 μm.

When the minimum distance between first regulating ring and the second recess circle and the minimum distance between first regulating ring and the first recess circle were in above within range respectively, it is comparatively reasonable to guarantee the distribution of bar groove 201, can effectively improve the luminous degree of consistency of the epitaxial wafer that final growth obtained and guarantee that epitaxial tray's use intensity is better.

In other implementations provided by the present disclosure, the minimum distance between the first adjusting ring and the second groove ring may also be 10-30 μm. The present disclosure is not so limited.

Optionally, the plurality of strip-shaped grooves 201 included in the first adjusting ring correspond to the plurality of circular grooves 101 included in the second groove ring one to one, and a connection line between the extension tray and the center of each circular groove 101 passes through the strip-shaped groove 201 corresponding to the circular groove 101.

When a plurality of bar grooves 201 that first adjustment circle included and a plurality of circular recess 101 one-to-one that the second groove circle included, the line of the centre of a circle of epitaxial tray and every circular recess 101 all passes through the bar groove 201 that circular recess 101 corresponds, can make bar groove 201 directly reduce the heat transfer effect between blank region and the circular recess 101, in order to reduce the heat influence that comes from the blank region that circular recess 101 received, guarantee that circular recess 101's temperature is comparatively even, in order to obtain the comparatively even epitaxial wafer of growth, the luminous degree of consistency and the uniformity of epitaxial wafer also can obtain improving.

For example, on the premise that the orthographic projection of the strip-shaped groove 201 on the end surface of the epitaxial tray is a symmetrical pattern similar to an ellipse, the symmetry axis of the symmetrical pattern may coincide with a connection line between the center of the circular groove 101 corresponding to the strip-shaped groove 201 and the center of the epitaxial tray.

The volume occupied by the stripe-shaped groove 201 can be reduced, and the influence of heat on the circular groove 101 and the blank area can be effectively controlled.

To facilitate understanding, fig. 2 is provided herein, and fig. 2 is an enlarged view of a strip groove provided in an embodiment of the present disclosure, and fig. 1 and 2 respectively identify the length of the strip groove 201, the width of the strip groove 201, the minimum distance between two adjacent strip grooves 201, the minimum distance between a first adjusting ring and a second groove ring, and the minimum distance between the first adjusting ring and the first groove ring as L, B, D1, D2, and D3.

Fig. 3 is a schematic structural diagram of an epitaxial tray provided in an embodiment of the disclosure, and referring to fig. 3, a ratio of a depth of the stripe-shaped groove 201 to a thickness of the epitaxial tray may be 1:800 to 1: 200.

The ratio of the depth of the strip-shaped groove 201 to the thickness of the epitaxial tray is within the above range, the depth of the strip-shaped groove 201 is reasonable, the stable use of the epitaxial tray is not influenced, and the influence of the heat of the blank area on the circular groove 101 can be reduced to the maximum extent. The growth uniformity and the luminous uniformity of the finally obtained epitaxial wafer are effectively improved.

Optionally, the depth of the strip-shaped groove 201 is 20-80 μm.

When the depth of the strip-shaped groove 201 is within the above range, the stable use of the epitaxial tray can be ensured, and the influence of the heat of the blank area on the circular groove 101 is effectively reduced. The growth uniformity and the luminous uniformity of the finally obtained epitaxial wafer are effectively improved.

In other implementations provided by the present disclosure, the depth of the strip-shaped groove 201 may also be 20 to 60 μm. The present disclosure is not so limited.

For ease of understanding, the depth of the strip-shaped groove 201 and the thickness of the epitaxial tray are respectively denoted as H1 and H2 in fig. 3.

Since the epitaxial wafer grown on the circular groove in the epitaxial tray is generally used for preparing the light emitting diode, a preparation process of the light emitting diode epitaxial wafer grown on the epitaxial tray provided by the present disclosure may be provided herein, and a specific process may refer to fig. 4.

Fig. 4 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 4, the embodiment of the present disclosure provides a method for manufacturing an led epitaxial wafer, where the method for manufacturing an led epitaxial wafer includes:

s201: the epitaxial tray is provided and is a cylinder, the end face of one end of the epitaxial tray is provided with a plurality of concentric groove rings, and each groove ring comprises a plurality of circular grooves which are uniformly distributed along the circumferential direction of the epitaxial tray. The epitaxial tray also comprises a plurality of concentric adjusting rings, one concentric adjusting ring is arranged between every two adjacent groove rings, each adjusting ring comprises a plurality of strip-shaped grooves which are uniformly distributed along the circumferential direction of the epitaxial tray, and the length direction of each strip-shaped groove is perpendicular to the diameter of the epitaxial tray.

S202: a substrate is placed in each circular recess.

Wherein the substrate may be a sapphire substrate. Easy to realize and manufacture.

S203: a GaN buffer layer is grown on the substrate.

Illustratively, the growth temperature of the GaN buffer layer can be 530-560 ℃, and the pressure can be 200-500 mtorr. The obtained GaN buffer layer has better quality.

S204: and growing an undoped GaN layer on the GaN buffer layer.

The thickness of the non-doped GaN layer can be 0.5-3 um.

Illustratively, the growth temperature of the non-doped GaN layer can be 1000-1100 ℃, and the growth pressure is controlled at 100-300 torr. The obtained undoped GaN layer has better quality.

S205: an n-type layer is grown on the undoped GaN layer.

Optionally, the n-type layer is an n-type GaN layer, the growth temperature of the n-type GaN layer can be 1000-1100 ℃, and the growth pressure of the n-type GaN layer can be 100-300 Torr.

Optionally, the thickness of the n-type GaN layer can be 0.5-3 um.

S206: a light emitting layer is grown on the n-type layer.

The light emitting layer may include InGaN well layers and GaN barrier layers alternately grown. The chamber pressure was controlled at 200 torr. When the InGaN well layer grows, the temperature of the reaction chamber is 760-780 ℃. When the GaN barrier layer grows, the temperature of the reaction chamber is 860-890 ℃. The obtained luminescent layer has better quality.

S207: and growing an AlGaN electron blocking layer on the light emitting layer.

The growth temperature of the AlGaN electron blocking layer can be 800-1000 ℃, and the growth pressure of the AlGaN electron blocking layer can be 100-300 Torr. The AlGaN electron blocking layer grown under the condition has good quality, and is beneficial to improving the luminous efficiency of the light-emitting diode.

S208: and growing a p-type layer on the AlGaN electron blocking layer.

Optionally, the p-type layer is a p-type GaN layer, the growth pressure of the p-type GaN layer can be 200-600 Torr, and the growth temperature of the p-type GaN layer can be 800-1000 ℃.

S209: and growing a p-type contact layer on the p-type GaN layer.

Alternatively, the growth pressure of the p-type contact layer may be 100 to 300Torr, and the growth temperature of the p-type contact layer may be 800 to 1000 ℃.

It should be noted that, in the embodiment of the present disclosure, a VeecoK 465i or C4 or RB MOCVD (Metal Organic Chemical Vapor Deposition) apparatus is adopted to implement the growth method of the light emitting diode. By using high-purity H₂(Hydrogen) or high purity N₂(Nitrogen) or high purity H₂And high purity N₂The mixed gas of (2) is used as a carrier gas, high-purity NH₃As an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, silane (SiH4) as an N-type dopant, trimethyl aluminum (TMAl) as an aluminum source, and magnesium dicylocene (CP)₂Mg) as a P-type dopant.

The structure of the light emitting diode epitaxial wafer after the step S209 is performed can be seen in fig. 5.

Fig. 5 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 5, in an implementation manner provided by the present disclosure, the obtained led epitaxial wafer may include a substrate 1, and a GaN buffer layer 2, an undoped GaN layer 3, an n-type GaN layer 4, a light-emitting layer 5, an AlGaN electron blocking layer 6, a p-type GaN layer 7, and a p-type contact layer 8 grown on the substrate 1.

It should be noted that the light emitting diode epitaxial wafer shown in fig. 5 is only used for example, and in other implementations provided by the present disclosure, the epitaxial tray may also be used for growing other types of light emitting diode epitaxial wafers, or growing different semiconductor epitaxial wafers, which is not limited by the present disclosure.

Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.