阅读说明：本技术 高频域的数据输出 (Data output in high frequency domain ) 是由 K·马组德尔 M·H·贝 于 2018-04-19 设计创作，主要内容包括：一种系统包含存储数据的存储器库(12)及耦合到所述存储器库(12)的转移所述数据的数据路径(46)。所述系统还包含锁存器(280、292、298、303),其基于所述系统中的时钟信号来对所述数据路径(46)进行门控。所述系统进一步包含耦合到所述数据路径(46)的接口电路,其响应于接收所述时钟信号的第一上升边缘而将指令发送到所述存储器库(12)以在所述数据路径(46)上传输所述数据。所述接口电路还响应于接收所述时钟信号的第二上升边缘而输出门控数据。所述锁存器(280、292、298、303)响应于接收所述时钟信号的下降边缘而对所述数据路径(46)进行门控以存储所述门控数据。(A system includes a memory vault (12) that stores data and a data path (46) coupled to the memory vault (12) that transfers the data. The system also includes a latch (280, 292, 298, 303) that gates the data path (46) based on a clock signal in the system. The system further includes an interface circuit coupled to the data path (46) that sends an instruction to the memory bank (12) to transmit the data on the data path (46) in response to receiving a first rising edge of the clock signal. The interface circuit also outputs gated data in response to receiving a second rising edge of the clock signal. The latch (280, 292, 298, 303) gates the data path (46) to store the gated data in response to receiving a falling edge of the clock signal.)

1. A system, comprising:

one or more memory banks configured to store data;

a data path coupled to the one or more memory banks and configured to transfer the data;

a latch configured to gate the data path based on a clock signal in the system; and

an interface circuit coupled to the data path, wherein the interface circuit is configured to:

in response to receiving a first rising edge of the clock signal, sending an instruction to the one or more memory banks to transmit the data on the data path; and

outputting gated data in response to receiving a second rising edge of the clock signal, wherein the latch is configured to gate the data path to store the gated data in response to receiving a falling edge of the clock signal.

2. The system of claim 1, wherein the interface circuit is configured to send a second instruction to the one or more memory banks to transmit second data on the data path in response to receiving the second rising edge.

3. The system of claim 1, wherein the latch is configured to gate the data path to store second gated data in response to receiving a second falling edge of the clock signal, wherein the interface circuit is configured to output the second gated data in response to receiving a third rising edge of the clock signal.

4. A semiconductor device, comprising:

one or more memory banks configured to store first data and second data;

a first data path coupled to the one or more memory banks configured to transfer the first data;

a second data path coupled to the one or more memory banks configured to transfer the second data;

a first latch configured to gate the first data path based on a clock signal in the semiconductor device;

a second latch configured to gate the second data path based on the clock signal; and

an interface circuit coupled to the one or more memory banks, the first latch, and the second latch, wherein the interface circuit is configured to:

in response to receiving a first rising edge of the clock signal, sending a first instruction to the one or more memory banks to transmit the first data on the first data path;

in response to receiving a first falling edge of the clock signal, send a second instruction to the one or more memory banks to transmit the second data on the second data path;

outputting first gating data in response to receiving a second rising edge of the clock signal; and

outputting second gating data in response to receiving a second falling edge of the clock signal, wherein the first latch is configured to gate the first data path to store the first gating data in response to receiving the first falling edge, and wherein the second latch is configured to gate the second data path to store the second gating data in response to receiving the second rising edge.

5. The semiconductor device of claim 4, wherein the interface circuit is configured to send a third instruction to the one or more banks to transmit third data on the first data path in response to receiving the second rising edge.

6. The semiconductor device of claim 4, wherein the first latch is configured to gate the first data path to store third gated data in response to receiving the second falling edge.

7. The semiconductor device of claim 6, wherein the interface circuit is configured to output the third gating data in response to receiving a third rising edge of the clock signal.

8. The semiconductor device of claim 4, wherein the interface circuit is configured to send a third instruction to the one or more banks to transmit third data on the second data path in response to receiving the second falling edge.

9. The semiconductor device of claim 4, wherein the second latch is configured to gate the second data path to store fourth gating data in response to receiving a third rising edge.

10. The semiconductor device of claim 9, wherein the interface circuit is configured to output the fourth gating data in response to receiving a third falling edge of the clock signal.

11. A method, comprising:

receiving a first rising edge of a clock signal;

in response to receiving the first rising edge, sending an instruction to transmit data on a data path;

receiving a falling edge of the clock signal;

in response to receiving the falling edge, gating the data path to store gated data;

receiving a second rising edge of the clock signal; and

outputting the gating data in response to receiving the second rising edge.

12. The method of claim 11, comprising sending a second instruction to transmit second data on the data path in response to receiving the second rising edge.

13. The method of claim 12, comprising receiving a second falling edge of the clock signal.

14. The method of claim 13, comprising gating the data path to store second gating data in response to receiving the second falling edge.

15. The method of claim 14, comprising receiving a third rising edge of the clock signal.

16. The method of claim 15, comprising outputting the second gating data in response to receiving the third rising edge.

17. The method of claim 11, comprising sending a second instruction to transmit second data on a second data path in response to receiving the falling edge.

18. The method of claim 17, comprising gating the second data path to store second gating data in response to receiving the second rising edge.

19. The method of claim 18, comprising receiving a second falling edge of the clock signal.

20. The method of claim 19, comprising outputting the second gating data in response to receiving the second falling edge.

Technical Field

Embodiments of the invention generally relate to the field of semiconductor devices. More specifically, embodiments of the present invention relate to data output by a semiconductor device operating in a high frequency domain.

Background

A semiconductor device, such as a microcomputer, memory, gate array, etc., may output requested data in response to instructions requesting the requested data (e.g., from a controller communicatively coupled to the semiconductor device). For example, in response to receiving a falling edge of a clock signal in a semiconductor device, an instruction may be sent to transmit requested data on a data path of the semiconductor device after an output delay (e.g., associated with outputting the data on the data path). In response to receiving a rising edge of the clock signal immediately following, the requested data may be output from the semiconductor device (e.g., via the input/output interface) through an output data path (e.g., when the clock signal is high). Thus, the time between sending an instruction to transmit requested data on a data path and outputting the data path is half the period of the clock signal.

However, in some high frequency domains, at least part of the data output from the data path may not be the requested data, resulting in no data or erroneous data being output from the semiconductor device. In such a high frequency domain, the output delay associated with sending the requested data on the data path may be greater than the time (i.e., half the period of the clock signal) between sending the instruction to transmit the requested data on the data path and outputting the data path. Thus, at least some of the data output from the data path may not be the requested data.

Embodiments of the present invention may address one or more of the problems set forth above.

Drawings

FIG. 1 is a simplified block diagram illustrating certain features of a memory device according to an embodiment of the invention;

FIG. 2 is an example timing diagram for reading data on a data path of the memory device of FIG. 1 in a low frequency domain;

FIG. 3 is an example timing diagram for reading data on a data path of the memory device of FIG. 1 in a high frequency domain;

FIG. 4 is an example timing diagram for reading data on a data path of the memory device of FIG. 1 in the high frequency domain, where the read delay is approximately equal to the period of the input clock signal, according to an embodiment of the invention;

FIG. 5 is an example timing diagram for reading data on a data path of the memory device of FIG. 1 in a lower frequency domain, where the read delay is approximately equal to the period of the input clock signal, according to an embodiment of the invention;

FIG. 6 is an example timing diagram for reading gated data on a data path of the memory device of FIG. 1 in a lower frequency domain, wherein the read delay is approximately equal to the period of the input clock signal, according to an embodiment of the invention;

FIG. 7 is a flow diagram of a method for ensuring that requested data in a data path is captured and output by the memory device of FIG. 1, wherein a read delay is approximately equal to a period of an input clock signal, in accordance with an embodiment of the present invention;

FIG. 8 is an example timing diagram for reading groups of gated data (e.g., a plurality of gated data words) on a data path of the memory device of FIG. 1 in a lower frequency domain, wherein a read delay is approximately equal to a period of an input clock signal, according to an embodiment of the invention;

FIG. 9 is a flow diagram of a method for ensuring that multiple sets of requested data (e.g., requested data words) in a data path are captured and output by the memory device of FIG. 1, wherein the read delay is approximately equal to the period of the input clock signal, in accordance with an embodiment of the present invention;

FIG. 10 is an example timing diagram for reading multiple sets of gated data on multiple data paths of the memory device of FIG. 1 based on rising and falling edges of a clock signal in a lower frequency domain, with a read delay approximately equal to the period of the input clock signal, according to an embodiment of the invention;

FIG. 11 is a flow diagram of a method for ensuring the capture and output of multiple sets of requested data by the memory device of FIG. 1 over multiple data paths based on rising and falling edges of an input clock signal, wherein a read delay is approximately equal to a period of the input clock signal, according to an embodiment of the invention;

FIG. 12 is a schematic diagram of a latch that can gate a data path according to an embodiment of the invention;

FIG. 13 is a diagram of a system that ensures the capture and output of requested data in a data path by the memory device 10 of FIG. 1, where the read delay is approximately equal to the period of the input clock signal, according to an embodiment of the invention;

FIG. 14 is a schematic diagram of a latch that can gate a data path according to an embodiment of the present invention; and

FIG. 15 is a diagram of a system that ensures the capture and output of requested data in a data path by the memory device 10 of FIG. 1, with a read delay approximately equal to the period of an input clock signal, according to an embodiment of the invention.

Detailed Description

One or more specific embodiments will be described below. In an effort to provide a concise description of these embodiments, not all features of an actual implementation are described in the specification. It should be appreciated that in the development of any such actual implementation, as in any engineering or design project, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which may vary from one implementation to another. Moreover, it should be appreciated that such a development effort might be complex and time consuming, but would nevertheless be a routine undertaking of design, fabrication, and manufacture for those of ordinary skill having the benefit of this disclosure.

As described in detail below, in response to receiving a first rising edge of a clock signal in a semiconductor device, an instruction may be sent to transmit data on a data path of the semiconductor device. In response to a first falling edge of the receive clock signal, the data path may be gated to store gated data. The gated data may then be output (e.g., by a semiconductor device) in response to receiving the second rising edge of the clock signal. Thus, the time between sending an instruction to transmit the requested data on the data path and outputting the gated data is a period of the clock signal. The period of the clock signal may be greater than or equal to an output delay associated with sending the requested data on the data path, thus preventing no reading of data or reading of erroneous data in the high frequency domain. Also, gating the data path may ensure that the requested data is output for the lower frequency domain. In this way, the requested data can be correctly output from the semiconductor device.

Turning now to the drawings, FIG. 1 is a simplified block diagram illustrating certain features of a memory device 10 (e.g., a memory device) according to an embodiment of the invention. Specifically, the block diagram of FIG. 1 is a functional block diagram illustrating certain functionality of the memory device 10. According to one embodiment, the memory device 10 may be a double data rate type five synchronous dynamic random access memory (DDR5SDRAM) device. The various features of DDR5SDRAM allow for reduced power consumption, more bandwidth, and more storage capacity than previous generations of DDR SDRAM. Although the present disclosure uses the memory device 10 as an example, it should be understood that embodiments of the present disclosure are contemplated for application to any suitable semiconductor device, such as an integrated circuit, a transistor, a processor, a microprocessor, or the like.

The memory device 10 may include a number of memory banks 12. For example, the memory bank 12 may be a DDR5SDRAM memory bank. The memory banks 12 may be provided on one or more chips (e.g., SDRAM chips) arranged on a dual in-line memory module (DIMMS). As will be appreciated, each DIMM can include several SDRAM memory chips (e.g., 8 or 16 memory chips). Each SDRAM memory chip may include one or more memory banks 12. The memory device 10 represents a portion of a single memory chip (e.g., an SDRAM chip) having several memory banks 12. For DDR5, the memory banks 12 may be further arranged to form bank groups. For example, for an 8 gigabyte (Gb) DDR5SDRAM, a memory chip may include 16 memory banks 12 arranged into 8 bank groups, each bank group including 2 memory banks. For example, for a 16Gb DDR5SDRAM, a memory chip may include 32 memory banks 12 arranged in 8 bank groups, each bank group including 4 memory banks. Various other configurations, organizations, and sizes of the memory banks 12 on the memory device 10 may be utilized depending on the application and design of the overall system.

Memory device 10 may include a command interface 14 and an input/output (I/O) interface 16. Command interface 14 may include processing and/or interface circuitry configured to provide a number of signals (e.g., signals 15) from an external device, such as controller 17. The controller 17 may include processing circuitry, such as one or more processors 18 (e.g., one or more microprocessors), which may execute software programs to, for example, provide various signals 15 to the memory device 10 to facilitate the transmission and reception of data to be written to or read from the memory device 10. Further, the processor 18 may include multiple microprocessors, one or more "general purpose" microprocessors, one or more special purpose microprocessors, and/or one or more Application Specific Integrated Circuits (ASICS), or some combination thereof. For example, the processor 18 may include one or more Reduced Instruction Set (RISC) processors. The controller 17 may be coupled to one or more memories 19, the memories 19 may store information such as control logic and/or software, look-up tables, configuration data, and the like. In some embodiments, the processor 18 and/or memory 19 may be external to the controller 17. The memory 19 may include a tangible, non-transitory, machine-readable medium, such as volatile memory (e.g., Random Access Memory (RAM)) and/or non-volatile memory (e.g., Read Only Memory (ROM), flash memory, a hard drive, or any other suitable optical, magnetic, or solid-state storage medium, or a combination thereof). The memory 19 may store various information and may be used for various purposes. For example, memory 19 may store machine-readable and/or processor-executable instructions (e.g., firmware or software) for execution by processor 18, such as instructions for providing various signals 15 to memory device 10 to facilitate the transmission and reception of data to be written to memory device 10 or read from memory device 10. As such, the controller 17 may provide various signals 15 to the memory device 10 to facilitate the transmission and reception of data to be written to the memory device 10 or read from the memory device 10.

It will be appreciated that the command interface 14 may include several circuits, such as a clock input circuit 20 and a command address input circuit 21, for example to ensure proper handling of the signal 15. The command interface 14 may receive one or more clock signals from an external device. Generally, Double Data Rate (DDR) memories utilize a differential pair of system clock signals, referred to herein as the true clock signal (Clk _ t /) and the complementary clock signal (Clk _ c). The positive clock edge for DDR refers to the point where the rising real clock signal Clk _ t/crosses the falling complementary clock signal Clk _ c, while the negative clock edge indicates the transition of the falling real clock signal Clk _ t and the rise of the complementary clock signal Clk _ c. Commands (e.g., read commands, write commands, etc.) are typically entered on the positive edge of a clock signal, and data is transmitted or received on both the positive and negative clock edges.

I/O interface 16 may include processing and/or interface circuitry configured to manage and/or perform input/output operations between memory device 10 and any suitable external device coupled to I/O interface 16.

The clock input circuit 20 receives the real clock signal (Clk _ t /) and the complementary clock signal (Clk _ c) and generates the internal clock signal Clk. The internal clock signal CLK is supplied to an internal clock generator, such as a Delay Locked Loop (DLL) circuit 30. The DLL circuit 30 generates a phase-controlled internal clock signal LCLK based on the received internal clock signal CLK. For example, the phase-controlled internal clock signal LCLK is supplied to the I/O interface 16 and is used as a timing signal for determining the output timing of the read data.

The internal clock signal CLK may also be provided to various other components within the memory device 10 and may be used to generate various additional internal clock signals. For example, an internal clock signal CLK may be provided to the command decoder 32. The command decoder 32 may receive command signals from the command bus 34 and may decode the command signals to provide various internal commands. For example, the command decoder 32 may provide command signals to the DLL circuit 30 over the bus 36 to coordinate the generation of the phase-controlled internal clock signal LCLK. The command decoder 32 may also provide command signals to the I/O interface 16 over the bus 37 to facilitate receiving and transmitting I/O signals. For example, the phase-controlled internal clock signal LCLK may be used to clock data through the IO interface 16.

Further, the command decoder 32 may decode commands such as read commands, write commands, mode register set commands, activate commands, etc., and provide access to the particular memory bank 12 corresponding to the command via the bus path 40. It will be appreciated that the memory device 10 may include various other decoders, such as a row decoder and a column decoder, to facilitate access to the memory banks 12. In one embodiment, each memory bank 12 includes a memory bank control block 22 that provides the necessary decoding (e.g., row and column decoders) as well as other features, such as timing control and data control, to facilitate execution of commands to and from the memory bank 12.

The memory device 10 performs operations such as read commands and write commands based on command/address signals received from an external device such as a processor. In one embodiment, the command/address bus may be a 14-bit bus to accommodate command/address signals (CA <13:0 >). The command/address signals are clocked to the command interface 14 using the clock signals (Clk _ t/and Clk _ c). For example, the command interface may include a command address input circuit 21 configured to receive and transmit commands through a command decoder 32 to provide access to the memory vault 12. In addition, the command interface 14 may receive a chip select signal (CS _ n). The CS _ n signal enables the memory device 10 to process commands on the incoming CA <13:0> bus. Accesses to a particular bank 12 within the memory device 10 are encoded on the CA <13:0> bus with commands.

In addition, the command interface 14 may be configured to receive a number of other command signals. For example, command/address on die termination (CA ODT) signals may be provided to facilitate proper impedance matching within the memory device 10. A RESET command (RESET _ n) may be used to RESET the command interface 14, status registers, state machine, etc., such as during power-up. Command interface 14 may also receive command/address inversion (CAI) signals, which may be provided, for example, to depend on the state of command/address signals CA <13:0> on a command/address routing inversion command/address bus for a particular memory device 10. An image (MIR) signal may also be provided to facilitate the image function. Based on the configuration of the multiple memory devices in a particular application, the MIR signal can be used to multiplex the signal so that it can be switched for some routing of the signal to the memory device 10. Various signals that facilitate testing of the memory device 10, such as a Test Enable (TEN) signal, may also be provided. For example, the TEN signal may be used to place the memory device 10 in a test mode for connectivity testing.

The command interface 14 may also be used to provide an ALERT signal (ALERT _ n) to the system processor or controller for certain errors that may be detected. For example, if a Cyclic Redundancy Check (CRC) error is detected, an ALERT signal (ALERT _ n) may be transmitted from memory device 10. Other alarm signals may also be generated. Furthermore, during certain operations, such as a connectivity test mode performed using the TEN signal, the bus and pins used to transmit the ALERT signal (ALERT _ n) from the memory device 10 may be used as input pins, as described above.

Data may be sent to and from memory device 10 by transmitting and receiving data signals 44 through IO interface 16 utilizing the command and timing signals discussed above. More specifically, data may be sent to the memory vault 12 or received from the memory vault 12 through a data path 46, which data path 46 may include multiple data paths or a bidirectional data bus. Data IO signals, commonly referred to as DQ signals, are typically transmitted and received in one or more bidirectional data buses. For some memory devices, such as DDR5SDRAM memory devices, the IO signals may be divided into high and low bytes. For example, for a 16 memory device, the IO signals may be divided into high IO signals and low IO signals (e.g., DQ <15:8> and DQ <7:0>) corresponding to high bytes and low bytes, such as data signals.

To allow higher data rates within memory device 10, some memory devices, such as DDR memory devices, may utilize a data strobe signal, commonly referred to as the DQS signal. The DQS signal is driven by an external processor or controller that sends data (e.g., for write commands) or by the memory device 10 (e.g., for read commands). The DQS signal is actually an additional data output (DQ) signal with a predetermined pattern for read commands. For write commands, the DQS signal is used as a clock signal to capture corresponding input data. As with the clock signals (Clk _ t/and Clk _ c), the data strobe (DQS) signal may be provided as a differential pair of data strobe signals (DQS _ t/and DQS _ c) to provide differential pair signaling during reads and writes. For certain memory devices, such as DDR5SDRAM memory devices, the differential pair of DQS signals may be divided into high and low data strobe signals (e.g., UDQS _ t/and UDQS _ c; LDQS _ t/and LDQS _ c) corresponding to high and low bytes of data, such as sent to and from the memory device 10.

An impedance (ZQ) calibration signal may also be provided to memory device 10 through IO interface 16. The ZQ calibration signal may be provided to a reference pin and used to tune the output driver and ODT values by adjusting the pull-up and pull-down resistors of the memory device 10 through process, voltage and temperature (PVT) value variations. Since PVT characteristics may affect the ZQ resistance value, a ZQ calibration signal may be provided to the ZQ reference pin for adjusting the resistance to calibrate the input impedance to a known value. It will be appreciated that a precision resistor is typically coupled between the ZQ pin on the memory device 10 and GND/VSS external to the memory device 10. This resistor serves as a reference for adjusting the drive strength of the internal ODT and IO pins.

In addition, a LOOPBACK signal (LOOPBACK) may be provided to memory device 10 through IO interface 16. The loopback signal may be used during a test or debug phase to set the memory device 10 to a mode in which signals loop back through the memory device 10 through the same pin. For example, the loopback signal may be used to set the memory device 10 to test the data output (DQ) of the memory device 10. Loopback may include both data and strobe or may include only data pins. This is generally desirable for monitoring data captured by memory device 10 at IO interface 16.

As will be appreciated, various other components such as power supply circuitry (for receiving external VDD and VSS signals), mode registers (to define various modes of programmable operation and configuration), read/write amplifiers (to amplify signals during read/write operations), temperature sensors (for sensing the temperature of the memory device 10), and so forth, may also be incorporated into the memory system 10. It should therefore be understood that only the block diagram of FIG. 1 is provided to highlight certain functional features of memory device 10 to assist in the subsequent detailed description.

In view of the foregoing, FIG. 2 is an example timing diagram 50 for reading data 52 on data path 46 of memory device 10 of FIG. 1 in the low frequency domain. At the falling edge 54 of the clock signal 56, the data 52 may be indicated to be sent on the data path 46. In some embodiments, clock signal 56 may include a phase-controlled internal clock signal LCLK generated by DLL circuit 30. However, there may be an output delay 58 between the falling edge 54 of the clock signal 56 and when the data 52 is on the data path 46. An output delay 58 (e.g., CLK to Q time) may be associated with the time that data 52 is output to data path 46. In particular, the output delay 58 may be associated with the time it takes for logic in the data path 46 or coupled to the data path 46 to output the data 52 to the data path 46.

At the next rising edge 60 of the clock signal 56, the data path 46 may be captured and output from the memory device 10. The data path 46 may be captured when the clock signal 56 is high 62. Accordingly, the shaded portion 64 of the data 52 is captured and output from the memory device 10.

Read delay 66 is measured between falling edge 54 of clock signal 56 (e.g., when data 52 may be indicated to be sent on data path 46) and the next rising edge 60 of clock signal 56 (e.g., when data path 46 may be captured and output from memory device 10). Thus, the read delay 66 is one-half of the period 68 (i.e., tCK)68 of the clock signal 56, or 1/2 tCK.

The remaining or logic time 70, i.e., read delay 66 minus output delay time 58, may be used to perform a function programmed into the data path 46 or logic coupled to the data path 46. Logic (which may include a combination of different kinds of logic) may execute programming instructions based on the data 52. For example, the logic may convert the data 52 (which data 52 may be in a parallel data format when stored in an array (e.g., an array of one or more memory banks 12)) to a serial data format. Additionally or alternatively, logic may combine the data with one or more timing signals (e.g., clocked DLL domain shift signals) so that the data 52 is synchronized with the phase-controlled internal clock signal LCLK generated by the DLL 30 circuitry. Thus, the output data (e.g., associated DQ signals 44) may be aligned with LCLK.

However, in some high frequency domains, at least some of the data output from data path 46 may not be data 52, resulting in no data or erroneous data being output from memory device 10. This may be due to the output delay 58 associated with outputting the data 52 on the data path 46 being greater than the remaining or logic time 70. As an example, there may be three gates in data path 46 or three gates may be coupled to data path 46 to output data 52 to data path 46, and each gate may have a delay of 60ps (picoseconds). Thus, the output delay 58 is 180ps (i.e., 3 × 60 ps). In some applications, and as shown in the example timing diagram 50 of FIG. 2, the read delay 66 (i.e., half of the period 68 of the clock signal 56) is greater than the output delay 58, and thus the data output from the data path 46 is the requested (e.g., correct) data 52. In other words, when the period 68 of the clock signal 56 is less than twice the duration of the output delay 58, the data 64 may be pushed into the next cycle of the clock, potentially causing incorrect output data to be output from the memory device 10. However, when the frequency of clock signal 56 is sufficiently high such that read delay 66 is less than output delay 58, no data or erroneous data may be output from memory device 10.

FIG. 3 is an example timing diagram 80 for reading data 52 on the data path 46 of the memory device 10 of FIG. 1 in the high frequency domain, such as when using a DDR5SDRAM memory device. For example, the high frequency domain may be greater than or equal to 1.66GHz (gigahertz), 2GHz, 2.5GHz, etc. In particular, the frequency of the clock signal 56 is sufficiently high such that the read delay 66 (i.e., half of the period 68 of the clock signal 56) is less than the output delay 58.

At the falling edge 54 of the clock signal 56, the data 52 may be indicated to be sent on the data path 46. There may be an output delay 58 between the falling edge 54 of the clock signal 56 and when the data 52 is on the data path 46.

At the next rising edge 60 of the clock signal 56, the data path 46 may be captured and output from the memory device 10. The data path 46 may be captured when the clock signal 56 is high 62. However, because read delay 66 (i.e., half of period 68 of clock signal 56) is less than output delay 58, at least a portion 82 of captured data path 46 does not contain data 52 (e.g., no data or incorrect data). After the output delay 58, the shaded portion 64 of the requested data 52 is captured. This combination of no data or incorrect data 82 and requested data 52 may then be output from the memory device 10.

To ensure that requested data 52 is captured, read delay 66 may be increased such that it is greater than or equal to output delay 58 (e.g., such that it is approximately equal to period 68 of clock signal 56). Although the present disclosure uses an example of a read delay 66 that is approximately equal to the period 68 of the clock signal 56, it should be understood that any suitable read delay 66 that is greater than or equal to the output delay 58 is contemplated. FIG. 4 is an example timing diagram 90 for reading data 52 in the high frequency domain on data path 46 of memory device 10 of FIG. 1, where read delay 66 is approximately equal to period 68 of clock signal 56 (e.g., 1 tCK), according to an embodiment of the invention.

At a first rising edge 92 of the clock signal 56, data 52 may be indicated to be sent on the data path 46. There may be an output delay 58 between the falling edge 54 of the clock signal 56 and when the data 52 is on the data path 46.

At the next rising edge 94 of the clock signal 56, the data path 46 may be captured and output from the memory device 10. The data path 46 may be captured when the clock signal 56 is high 62. Because read delay 66 (i.e., period 68 of clock signal 56) is greater than output delay 58, shaded portion 64 of data 52 captured and output from memory device 10 contains data that is not incorrect data. In this manner, increasing the read delay 66 so that it is greater than or equal to the output delay 58 (e.g., so that it is approximately equal to the period 68 of the clock signal 56) may ensure that the requested data 52 is captured.

However, extending read delay 66 in this manner may result in no data or incorrect data being captured at the back end of data 52 rather than the front end of data 52 when, for example, memory device 10 is programmed for a lower frequency domain. FIG. 5 is an example timing diagram 100 for reading data 52 in the lower frequency domain on data path 46 of memory device 10 of FIG. 1, where read delay 66 is approximately equal to period 68 of clock signal 56, according to an embodiment of the invention. For example, the lower frequency domain may be less than or equal to 1.66GHz, 1.5GHz, 1.25GHz, etc. In particular, the frequency of the clock signal 56 is sufficiently low such that when the clock signal 56 is high 62 but before the clock signal 56 transitions low, the end 102 of the data 52 is captured and output from the memory device 10 via the data path 46.

At a first rising edge 92 of the clock signal 56, data 52 may be indicated to be sent on the data path 46. There may be an output delay 58 between the first rising edge 92 of the clock signal 56 and when the data 52 is on the data path 46.

At the next rising edge 94 of the clock signal 56, the data path 46 may be captured and output from the memory device 10. The data path 46 may be captured when the clock signal 56 is high 62. Thus, the shaded portion 64 of the requested data 52 is captured. However, because the end 102 of the data 52 occurs when the data path 46 is captured and output from the memory device 10 (e.g., when the clock signal 56 is high 62), at least a portion 82 of the captured data path 46 does not contain the data 52 (e.g., no data or incorrect data). This combination of requested data 52 and no data or incorrect data 82 may then be output from the memory device 10.

To ensure that the requested data 52 is captured, the data path 46 may be gated such that the requested data 52 in the data path 46 may be stored and read when the clock signal is high (e.g., at 62). FIG. 6 is an example timing diagram 110 for reading gated data 112 on data path 46 of memory device 10 of FIG. 1 in the lower frequency domain, with read delay 66 approximately equal to period 68 of clock signal 56, according to an embodiment of the invention.

At a first rising edge 92 of the clock signal 56, data 52 may be indicated to be sent on the data path 46. There may be an output delay 58 between the first rising edge 92 of the clock signal 56 and when the data 52 is on the data path 46.

At the next falling edge 114 of the clock signal 56, a latch coupled to the data path 46 may be instructed to gate the data path 46. Thus, after the latch delay 116, the latch may gate the data 52 in the data path 46, producing the gated data 112.

At the next rising edge 94 of the clock signal 56, a shaded portion 118 of the gated data 112 may be captured and output from the memory device 10. Gated data 112 may be captured when clock signal 56 is high 62. Gating the data path 46 may ensure that the requested data 52 in the data path 46 is captured and read when the clock signal is high (e.g., at 62). Furthermore, the system, device, method, etc., implementing example timing diagram 110 may be used in the high frequency domain as well as the lower frequency domain, with appropriate results independent of frequency, as seen in example timing diagram 90 of fig. 4.

FIG. 7 is a flow diagram of a method 130 for ensuring that requested data 52 in data path 46 is captured and output by memory device 10 of FIG. 1 even when read delay 66 is greater than half of period 68 of clock signal 56 (e.g., approximately equal to period 68), according to an embodiment of the invention. In particular, performing the method 130 may result in the example timing diagram 110 of FIG. 6. The method 130 may be performed by any suitable device or combination of devices that may send an instruction to transmit data 52 on a data path 46 of a semiconductor device in response to receiving a first rising edge 92 of a clock signal 56 in the semiconductor device, gate the data path 46 to store gated data 112 in response to receiving a falling edge 114 of the clock signal 56, and output the gated data 112 in response to receiving a second rising edge 94 of the clock signal 56. Where method 130 is described using steps in a particular sequence, it is to be understood that the present invention contemplates that the described steps may be performed in a different sequence than the illustrated sequence, and that some of the described steps may be skipped or not performed at all. In some embodiments, at least some steps of method 130 may be performed by command interface 14 and/or input/output (I/O) interface 16 of a semiconductor device (e.g., memory device 10). Thus, the method 130 is described below as being performed by the I/O interface 16. However, it should be understood that any suitable device or combination of devices is contemplated for performing the method 130, such as a controller (e.g., a memory vault controller, a controller 17 coupled to a semiconductor device, etc.).

As illustrated, the I/O interface 16 receives (process block 132) the first rising edge 92 of the clock signal 56. In response to receiving the first rising edge 92, the I/O interface 16 sends (process block 134) an instruction (e.g., to one or more memory banks 12) to transmit the data 52 on the data path 46. There may be an output delay 58 between the first rising edge 92 of the clock signal 56 and when the data 52 is on the data path 46.

The I/O interface 16 then receives (process block 136) the falling edge (e.g., the next falling edge 114) of the clock signal 56. In response to receiving the next falling edge 114, the I/O interface 16 gates (process block 138) the data path 46 to store the gated data 112. In particular, after the latch delay 116, the I/O interface 16 may store the data 52 on the data path 46 in the latch.

The I/O interface 16 receives (process block 140) a second rising edge (e.g., the next rising edge 94) of the clock signal 56. In response to receiving the second rising edge 94, the I/O interface 16 outputs (process block 142) the gated data 112 (e.g., the shaded portion 118 of the gated data 112). In particular, the I/O interface 16 may read the data 118 from the memory device 10 and output the data 118.

Thus, the time between sending an instruction to transmit the requested data 52 on the data path 46 (e.g., at the first rising edge 92) and beginning to output the gated data 118 (i.e., the read delay 66) is the period 68 of the clock signal 56. The period 68 of the clock signal 56 may be greater than or equal to the output delay 58 associated with sending the requested data 52 on the data path 46, thus preventing no data or erroneous data from being read in the high frequency domain. Furthermore, gating the data path 46 may ensure that the requested data 52 is output for the lower frequency domain. In this manner, requested data 52 may be output from memory device 10 as appropriate.

In some cases, multiple (consecutive) sets of data (e.g., data words) may be requested from and output by the memory device 10. FIG. 8 is an example timing diagram 150 for reading multiple sets of gated data 112 (e.g., multiple gated data words) on data path 46 of memory device 10 of FIG. 1 using a single clock in the lower frequency domain, with read delay 66 approximately equal to period 68 of clock signal 56, according to an embodiment of the invention.

At a first rising edge 92 of the clock signal 56, the first data 52 may be indicated to be sent on the data path 46. There may be an output delay 58 between the first rising edge 92 of the clock signal 56 and when the first data 52 is on the data path 46.

At the next falling edge 114 of the clock signal 56, the first latch coupled to the data path 46 may be instructed to gate the data path 46. Thus, after the latch delay 116, the first latch may gate the first data 52 in the data path 46, producing first gated data 112.

At the next rising edge 94 of the clock signal 56, a first shaded portion 118 of the first gating data 112 may be captured and output from the memory device 10. The first gated data 112 may be captured when the clock signal 56 is high 62. Additionally, the second data 152 may also be indicated to be sent on the data path 46 at the next rising edge 94. There may be an output delay 58 between the next rising edge 94 of the clock signal 56 and when the second data 152 is on the data path 46.

At the next falling edge 154 of the clock signal 56, the latch may be instructed to gate the data path 46. Thus, after the latch delay 116, the latch may gate the second data 152 in the data path 46, producing second gated data 156. In some embodiments, the second latch may additionally or alternatively be instructed to gate the data path 46.

At the next rising edge 158 of the clock signal 56, a second shaded portion 160 of the gating data 156 may be captured and output from the memory device 10. The second gating data 156 may be captured when the capture clock signal 56 is high 62. Systems, devices, methods, etc., implementing example timing diagram 150 may be used in the high frequency domain as well as the lower frequency domain. In this manner, multiple (sequential) sets of data (e.g., data words) may be requested and output from the memory device 10.

FIG. 9 is a flow diagram of a method 170 for ensuring that multiple sets of requested data (e.g., requested data words) in data path 46 are captured and output by memory device 10 of FIG. 1, in which read delay 66 is approximately equal to period 68 of clock signal 56, according to an embodiment of the invention. In particular, performing the method 170 may result in the example timing diagram 150 of FIG. 8. The method 170 may be performed by any suitable device or combination of devices that may send an instruction to transmit data 52 on the data path 46 of a semiconductor device in response to receiving the first rising edge 92 of the clock signal 56 in the semiconductor device, gate the data path 46 to store the gated data 112 in response to receiving the falling edge 114 of the clock signal 56, and output the gated data 112 in response to receiving the second rising edge 94 of the clock signal 56. Although the method 170 is described using steps in a particular sequence, it is to be understood that the present invention contemplates that the described steps may be performed in a different sequence than the illustrated sequence, and that some of the described steps may be skipped or not performed at all. In some embodiments, at least some steps of method 170 may be performed by command interface 14 and/or input/output (I/O) interface 16 of a semiconductor device (e.g., memory device 10). Thus, the method 170 is described below as being performed by the I/O interface 16. However, it should be understood that any suitable device or combination of devices is contemplated for performing the method 170, such as a controller (e.g., a memory vault controller, a controller 17 coupled to a semiconductor device, etc.).

As illustrated, the I/O interface 16 receives (process block 172) the first rising edge 92 of the clock signal 56. In response to receiving the first rising edge 92, the I/O interface 16 sends (process block 174) an instruction (e.g., to one or more memory banks 12) to transmit the first data 52 over the data path 46. There may be an output delay 58 between the first rising edge 92 of the clock signal 56 and when the data 52 is on the data path 46.

The I/O interface 16 then receives (process block 176) a first falling edge (e.g., the next falling edge 114) of the clock signal 56. In response to receiving the next falling edge 114, the I/O interface 16 gates (process block 178) the data path 46 to store the first gated data 112. In particular, after the latch delay 116, the I/O interface 16 may store the first data 52 on the data path 46 in the latch.

The I/O interface 16 receives (process block 180) a second rising edge (e.g., the next rising edge 94) of the clock signal 56. In response to receiving the second rising edge 94, the I/O interface 16 outputs (process block 182) the first gating data 112 (e.g., the first shaded portion 118 of the first gating data 112) and sends a second instruction (e.g., to the one or more memory banks 12) to transmit the second data 152 on the data path 46. In particular, the I/O interface 16 may read the data 118 from the memory device 10 and output the data 118. There may be an output delay 58 between the second rising edge 94 of the clock signal 56 and when the second data 152 is on the data path 46.

The I/O interface 16 then receives (process block 184) a second falling edge (e.g., the next falling edge 154) of the clock signal 56. In response to receiving the second falling edge 154, the I/O interface 16 gates the data path 46 (process block 186) to store the second gated data 156. In particular, the I/O interface 16 may store the data 152 on the data path 46 in a latch after the latch delay 116.

The I/O interface 16 receives (process block 188) a third rising edge (e.g., the next rising edge 158) of the clock signal 56. In response to receiving the third rising edge 158, the I/O interface 16 outputs (process block 190) the second gating data 156 (e.g., the second shaded portion 160 of the second gating data 156). In particular, the I/O interface 16 may read the second data 160 from the memory device 10 and output a third. Thus, the method 170 may capture and output multiple sets of requested data 52, 152 from the memory device 10 in the data path 46, with the read delay 66 approximately equal to the period 68 of the clock signal 56.

In some embodiments, multiple sets of data (e.g., data words) may be requested from the memory device 10 and output by the memory device 10 via multiple data paths 46 based on rising and falling edges of the clock signal 56 or the clock signal 56 and the inverted clock signal. FIG. 10 is an example timing diagram 200 for reading multiple sets of gated data (e.g., multiple gated data words) on multiple data paths 46 of the memory device 10 of FIG. 1 based on rising and falling edges of the clock signal 56 in the lower frequency domain, with a read delay 66 approximately equal to the period 68 of the clock signal 56, according to an embodiment of the invention.

At a first rising edge 92 of the clock signal 56, the first data 52 may be indicated to be sent on the first data path 46. There may be an output delay 58 between the first rising edge 92 of the clock signal 56 and when the first data 52 is on the first data path 46.

At the next falling edge 114 of the clock signal 56, the first latch coupled to the data path 46 may be instructed to gate the data path 46. Thus, after the latch delay 116, the first latch may gate the first data 52 in the data path 46, producing first gated data 112. The second data 202 may also be indicated to be sent on the second data path 46 at the next falling edge 114 of the clock signal 56. There may be an output delay 58 between the next falling edge 114 of the clock signal 56 and when the second data 202 is on the second data path 46. An inverted clock signal 204 that inverts clock signal 56 is shown in example timing diagram 200. It should be understood that any transmission, reception, and/or gating of data based on clock signal 56 may additionally or alternatively be based on inverted clock signal 204. Thus, in some embodiments, the second data 202 may additionally or alternatively be instructed to be sent on the second data path 46 at the first rising edge 206 of the inverted clock signal 204.

At the next rising edge 94 of the clock signal 56, a first shaded portion 118 of the first gating data 112 may be captured and output from the memory device 10. The first gated data 112 may be captured when the clock signal 56 is high 62. Additionally, the third data 152 may also be instructed to be sent on the first data path 46 at the next rising edge 94. There may be an output delay 58 between the next rising edge 94 of the clock signal 56 and when the third data 152 is on the first data path 46. Further, a second latch coupled to the second data path 46 may be instructed to gate the second data path 46 at the next rising edge 94. Thus, after latch delay 116, the second latch may gate the second data 202 in the second data path 46, thereby generating second gated data 208. In some embodiments, the second data path 46 in the second latch may additionally or alternatively be gated at the next falling edge 209 of the inverted clock signal 204.

At the next falling edge 154 of clock signal 56, the first latch may be instructed to gate data path 46. Thus, after the latch delay 116, the first latch may gate the third data 152 in the first data path 46, producing third gated data 156. The second shaded portion 210 of the second gating data 208 may also be captured at the next falling edge 154 of the clock signal 56 and output from the memory device 10. The second gating data 208 may be captured when the clock signal 56 is low 212. In some embodiments, the second gating data 208 may additionally or alternatively be captured and output from the memory device 10 at the next rising edge 214 of the inverted clock signal 204. Thus, the second gating data 208 may be captured when the inverted clock signal 204 is high 216. Additionally, fourth data 218 may also be indicated to be sent on the second data path 46 at the next falling edge 154 of the clock signal 56. There may be an output delay 58 between the next falling edge 154 of the clock signal 56 and when the fourth data 218 is on the second data path 46. In some embodiments, the fourth data 218 may additionally or alternatively be instructed to be sent on the second data path 46 at the next rising edge 214 of the inverted clock signal 204.

At the next rising edge 158 of the clock signal 56, a third shaded portion 160 of the third gating data 156 may be captured and output from the memory device 10. The third gating data 156 may be captured when the clock signal 56 is high 62. Additionally, a second latch coupled to the second data path 46 may be instructed to gate the second data path 46 at the next rising edge 158. Thus, after the latch delay 116, the second latch may gate the fourth data 218 in the second data path 46, producing fourth gated data 220. In some embodiments, the second data path 46 may additionally or alternatively be gated in a second latch at the next falling edge 222 of the inverted clock signal 204.

At the next falling edge 224 of the clock signal 56, a fourth shaded portion 226 of the fourth gating data 220 may also be captured and output from the memory device 10. The fourth gating data 220 may be captured when the clock signal 56 is low 212. In some embodiments, the fourth gating data 220 may additionally or alternatively be captured and output from the memory device 10 at the next rising edge 228 of the inverted clock signal 204. Thus, the second gating data 208 may be captured when the inverted clock signal 204 is high 216.

The systems, devices, methods, etc. implementing example timing diagram 200 may be used in a high frequency domain as well as a low frequency domain. Additionally, although the example timing diagram 200 illustrates reading multiple sets of gated data (e.g., multiple gated data words), it should be understood that the example timing diagram 200 may also be applied to reading a single set of gated data (e.g., a single gated data word). In this manner, multiple sets of data (e.g., data words) may be requested from the memory device 10 and output by the memory device 10 via the plurality of data paths 46 based on the falling edge of the clock signal 56 or the clock signal 56 and the inverted clock signal 204.

FIG. 11 is a flow diagram of a method 240 for ensuring that multiple sets of requested data (e.g., requested data words) are captured and output by the memory device 10 of FIG. 1 via multiple data paths 46 based on rising and falling edges of an input clock signal 56, in which a read delay 66 is approximately equal to a period 68 of the clock signal 56, according to an embodiment of the invention. In particular, performing the method 240 may result in the example timing diagram 200 of fig. 10. The method 240 may be performed by any suitable device or combination of devices that may send an instruction to transmit data 52 on a data path 46 of a semiconductor device in response to receiving a first rising edge 92 of a clock signal 56 in the semiconductor device, gate the data path 46 to store gated data 112 in response to receiving a falling edge 114 of the clock signal 56, and output the gated data 112 in response to receiving a second rising edge 94 of the clock signal 56. Further, in some embodiments, any of the steps of method 240 may additionally or alternatively be performed on a rising edge or a falling edge of inverted clock signal 204. Although method 240 is described using steps in a particular sequence, it is to be understood that the present invention contemplates that the described steps may be performed in a different sequence than the illustrated sequence, and that some of the described steps may be skipped or not performed at all. In some embodiments, at least some of the steps of method 240 may be performed by command interface 14 and/or input/output (I/O) interface 16 of a semiconductor device (e.g., memory device 10). Thus, the method 240 is described below as being performed by the I/O interface 16. However, it should be understood that any suitable device or combination of devices is contemplated for performing method 240, such as a controller (e.g., a memory vault controller, a controller 17 coupled to a semiconductor device, etc.).

As illustrated, the I/O interface 16 receives (process block 242) the first rising edge 92 of the clock signal 56. In response to receiving the first rising edge 92, the I/O interface 16 sends (process block 244) a first instruction (e.g., to one or more memory banks 12) to transmit the data 52 on the data path 46. There may be an output delay 58 between the first rising edge 92 of the clock signal 56 and when the data 52 is on the first data path 46.

The I/O interface 16 then receives (process block 246) a first falling edge (e.g., the next falling edge 114) of the clock signal 56. In response to receiving the next falling edge 114, the I/O interface 16 gates the first data path 46 (process block 248) to store the first gated data 112 and sends a second instruction (e.g., to one or more memory banks 12) to transmit the second data 202 on the second data path 46. In particular, the I/O interface 16 may store the first data 52 on the first data path 46 in the first latch after the latch delay 116. There may be an output delay 58 between the next falling edge 114 of the clock signal 56 and when the second data 202 is on the second data path 46. In some embodiments, the second data 202 may additionally or alternatively be instructed to be sent on the second data path 46 at the first rising edge 206 of the inverted clock signal 204.

The I/O interface 16 receives (process block 250) a second rising edge (e.g., the next rising edge 94) of the clock signal 56. In response to receiving the second rising edge 94, the I/O interface 16 outputs (process block 252) the first gating data 112 (e.g., the first shaded portion 118 of the first gating data 112), sends a third instruction (e.g., to one or more memory banks 12) to transmit the third data 152 on the first data path 46, and gates the second data path 46 to store the second gating data 208. In particular, the I/O interface 16 may read the data 118 from the memory device 10 and output the data 118. There may be an output delay 58 between the next rising edge 94 of the clock signal 56 and when the third data 152 is on the first data path 46. After latch delay 116, I/O interface 16 may store second data 202 on second datapath 46 in a second latch. In some embodiments, the second data path 46 may additionally or alternatively be gated in a second latch at the first falling edge 209 of the inverted clock signal 204.

The I/O interface 16 then receives (process block 254) a second falling edge (e.g., the next falling edge 154) of the clock signal 56. In response to receiving the second falling edge 154, the I/O interface 16 gates (process block 256) the first data path 46 to store the third gated data 156, outputs the second gated data 208 (e.g., the second shaded portion 210 of the second gated data 208), and sends a fourth instruction (e.g., to one or more memory banks 12) to transmit the fourth data 218 on the second data path 46. In particular, the I/O interface 16 may store the data 152 on the first data path 46 in the first latch after the latch delay 116. The I/O interface 16 may read the data 210 from the memory device 10 and output the data 210. There may be an output delay 58 between the second falling edge 154 of the clock signal 56 and when the fourth data 218 is on the second data path 46. In some embodiments, the second gating data 208 may additionally or alternatively be captured at the second rising edge 214 of the inverted clock signal 204 and output from the memory device 10. Similarly, fourth data 218 may additionally or alternatively be instructed to be sent on the second data path 46 at the second rising edge 214 of the inverted clock signal 204.

The I/O interface 16 receives (process block 258) the third rising edge (e.g., the next rising edge 158) of the clock signal 56. In response to receiving the third rising edge 158, the I/O interface 16 outputs (process block 260) the third gating data 156 (e.g., the third shaded portion 160 of the third gating data 156) and gates the second data path 46 to store the fourth gating data 220. In particular, the I/O interface 16 may read the third data 160 from the memory device 10 and output the third data 160. The I/O interface 16 may also store the fourth data 218 on the second data path 46 in the second latch after the latch delay 116. In some embodiments, the second data path 46 may additionally or alternatively be gated in a second latch at the second falling edge 222 of the inverted clock signal 204.

The I/O interface 16 then receives (process block 262) a third falling edge (e.g., the next falling edge 224) of the clock signal 56. In response to receiving the third falling edge 224, the I/O interface 16 (process block 264) fourth gating data 220 (e.g., the fourth shaded portion 226 of the fourth gating data 220). In some embodiments, the fourth gating data 220 may additionally or alternatively be captured at the third rising edge 228 of the inverted clock signal 204 and output from the memory device 10.

Thus, the method 240 may capture and output multiple sets of requested data 52, 202, 152, 218 from the memory device 10 in the data path 46 based on the rising and falling edges of the input clock signal 56, with the read delay 66 approximately equal to the period 68 of the clock signal 56.

FIG. 12 is a schematic diagram of a latch 280 that can gate the data path 46 according to an embodiment of the invention. As illustrated, latch 280 may receive data path 46 and clock signal 56 as inputs (e.g., via input pins). In some embodiments, the latch 280 may include additional inputs, such as an inverted clock signal 204, a disable data signal that may disable the latch 280 from passing data and/or storing data, and set and reset signals that may manipulate the gated data 112.

When the clock signal 56 is low, the latch 280 may enable the data path 46 to flow through the latch 280 and output as the gated data 112. Thus, in the example timing diagram 200 of fig. 10, the gated data 112 is the data 52, for example, after the first falling edge 114 of the clock signal 56 (and after the latch delay 116).

When the clock signal 56 is high 62, the latch 280 may gate the data path 46 to be stored and output as the gated data 112 for the duration that the clock signal 56 is high 62. Thus, in the example timing diagram 200 of fig. 10, for example, after the second rising edge 94 of the clock signal 56, the gated data 112 (e.g., the shaded portion 118 of the gated data 112) is the data 52 for the duration that the clock signal 56 is high 62. In this way, if there is other data or no data on the data path 46 after the data 52 is on the data path 46 while the clock signal 56 is high 62, the read and output gating data 112 will continue to read and output the requested data 52.

FIG. 13 is a diagram of a system 290 that ensures that requested data in the data path 46 is captured and output by the memory device 10 of FIG. 1 when the read delay 66 is greater than (e.g., approximately equal to) one-half of the period 68 of the clock signal 56, according to an embodiment of the invention. The system 290 may, for example, perform the methods 130, 170, and 240 of fig. 7, 9, and 11.

The system 290 may include a first latch 292, which may be similar to the latch 280 as described in fig. 12. The first latch 292 may include a first data path 294 (a data path in the data path 46) and a clock signal 56 as inputs. Based at least on these inputs, first latch 292 may output first gating data (e.g., gating data 112). The clock signal 56 and the first gating data 112 may also be input into the first NAND gate 296.

The system 290 may also include a second latch 298, which may be similar to the latch 280 as described in FIG. 12. Second latch 298 may include as inputs second data path 297 (the data path in data path 46) and inverted clock signal 204. In some embodiments, second latch 298 may instead receive clock signal 56 and generate inverted clock signal 204 (e.g., via an inverter). Based at least on these inputs, second latch 298 may output second gating data (e.g., gating data 208). The inverted clock signal 204 and the second gating data 208 may also be input into the second nand gate 299. Nand gates 298, 299 gate the outputs of latches 292, 298, respectively, to block data from passing through latches 292, 298 while the respective clocks are low. The outputs of the first and second nand gates 296, 299 may then be input into two subsequent nand gates 300, 301. The subsequent nand gates 300, 301 ensure that there is no data collision on the output 302 between the outputs of the latches 292, 298. In other words, the system 290 may generate the output 302 based on the outputs of two subsequent nand gates 300, 301. In this manner, requested data 52 may be output from memory device 10 as appropriate.

FIG. 14 is a schematic diagram of a latch 303 that can gate the data path 46, according to an embodiment of the invention. In some embodiments, latch 303 may be used as latch 280 in FIG. 2 and/or latches 292, 298 in FIG. 13. As illustrated, latch 303 may receive as inputs clock signal 56, inverted clock signal 204, and data path 46 via input pins. Based at least on these inputs and circuitry (e.g., an inverter) in the latch 303, the latch 303 may output the gated data 112.

FIG. 15 is a diagram of a system 320 that ensures the capture and output of requested data in the data path 46 by the memory device 10 of FIG. 1, with a read delay 66 approximately equal to the period 68 of the clock signal 56, according to an embodiment of the invention. The system 320 may, for example, perform the methods 130, 170, and 240 of fig. 7, 9, and 11.

System 320 may include a first latch 322, which may include a latch similar to latch 303 as described in fig. 14. The first latch 322 may include as inputs: a first data path 294, a clock signal 56, and an inverted clock signal 204. Based at least on these inputs, the first latch 322 may output first gating data 327. The clock signal 56 and the first gating data 327 may then be input into the first nand gate 330.

The system 320 may also include a second latch 332, which may include a latch similar to the latch 303 as described in FIG. 14. The second latch 332 may include as inputs: a second data path 297, inverted clock signal 204, and clock signal 56. Based on at least these inputs, the second latch 332 may output second gating data 337. The inverted clock signal 204 and the second gated data 337 may then be input to a second nand gate 340. Then can be combined withThe outputs of the first nand gate 330 and the second nand gate 340 are input into third and fourth nand gates 342, 344. The outputs of the third and fourth NAND gates 342, 344 may be combined and input into a first switch 346, which first switch 346 may also comprise a positive power supply V_DD348 as inputs.

The system 320 may also include a third latch 350, which may include a latch similar to the latch 306 as described in FIG. 15. The third latch 350 may include as inputs: a first data path 294, a clock signal 56, and an inverted clock signal 204. Based at least on these inputs, the third latch 350 may output third gating data 354. The clock signal 56 and the third gating data 354 may then be input into the fifth nand gate 356.

The system 320 may also include a fourth latch 358, which may include a latch similar to the latch 306 as described in FIG. 15. The fourth latch 358 may include as inputs: a second data path 297, inverted clock signal 204, and clock signal 56. Based on at least these inputs, the fourth latch 358 may output fourth gating data 362. The inverted clock signal 204 and the fourth gating data 362 may then be input to a sixth nand gate 364. The outputs of the fifth and sixth nand gates 356, 364 may then be input into seventh and eighth nand gates 366, 368. The outputs of the seventh and eighth NAND gates 366, 368 may be combined and input to a second switch 370, the second switch 370 may also include a negative power supply V_SS372 as input. The outputs of the first and second switches 346, 370 may be combined into an input 374, and the output 374 may be output from the memory device 10 (e.g., via one or more of the DQ signals 44). In this way, the requested data 52 can be output from the memory device 10 appropriately and freely. In some embodiments, the system 320 may include additional circuitry, such as buffer stages, between the NAND gates 342, 344 and the switch 346 and/or between the NAND gates 366, 368 and the switch 370.

While the invention may be susceptible to various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and have been described in detail herein. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed. Rather, the invention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the following appended claims.

The techniques presented and claimed herein are referenced and applied to material objects and specific examples of a practical nature that may prove improvements in the art and are, therefore, not abstract, intangible, or purely theoretical. Furthermore, if any claim appended to the end of this specification contains one or more elements designated as "means for [ performing ] [ function ] …" or "step for [ performing ] [ function ]", it is intended that such elements be construed in accordance with 35u.s.c.112 (f). However, it is not intended that such elements be construed in accordance with 35u.s.c.112(f) for any claim containing elements specified in any other way.