阅读说明：本技术 超高真空极低温四探针测量装置及其方法 (The extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum ) 是由 王文杰 于 2019-09-06 设计创作，主要内容包括：本发明公开了超高真空极低温四探针测量装置及其方法,超高真空极低温四探针测量其方法包括以下步骤,步骤S1：样品生长电极,步骤S2：将生长电极后的样品放置于第一样品托,步骤S3：通过转动螺杆使探针台旋转并且旋转到探针接触到第一样品托中生长电极后的样品位置处,步骤S4：通过显微镜观测探针是否接触电极,步骤S5：通过给探针通电来检测电极生长的完好性。本发明公开的超高真空极低温四探针测量装置及其方法,其与显微镜配合使用,加通直流电检测样品的完好性。(The invention discloses the extremely low temperature four-point probe measurment devices and methods therefors of ultrahigh vacuum, extremely low its method of temperature four-point probe measurment of ultrahigh vacuum includes the following steps, step S1: sample grown electrode, step S2: the sample after growth electrode is placed in the first sample carrier, step S3: probe station is rotated by rotation screw rod and is rotated at the sample position that probe touches after growing electrode in the first sample carrier, step S4: whether electrode is contacted by microscopic probe, step S5: by being powered to probe come the integrity of detecting electrode growth.The extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum disclosed by the invention uses with microscopes, adds the integrity of logical direct current test sample.)

1. a kind of extremely low temperature four-point probe measurment method of ultrahigh vacuum is grown for detecting electrode, which is characterized in that including following step It is rapid:

Step S1: sample grown electrode；

Step S2: the sample after growth electrode is placed in the first sample carrier；

Step S3:, which rotating probe station by rotation screw rod, and rotates to probe touches in the first sample carrier after growth electrode Sample position at；

Step S4: whether electrode is contacted by microscopic probe；

Step S5: by being powered to probe come the integrity of detecting electrode growth.

2. a kind of extremely low temperature four-point probe measurment method of ultrahigh vacuum according to claim 1, which is characterized in that screw tip Hemisphere is set to head on probe station rotation for hemisphere and by rotary screw.

3. a kind of extremely low temperature four-point probe measurment method of ultrahigh vacuum according to claim 1, which is characterized in that the step 5 are embodied as following steps:

Step S5.1: electrode growth is intact if electrode conduction after probe energization；

Step S5.2: electrode growth is not intact if electrode is not turned on after probe energization.

4. a kind of extremely low temperature four-point probe measurment device of ultrahigh vacuum is grown for detecting electrode characterized by comprising

Pedestal, the pedestal are equipped with thread cavity and support portion；

Screw rod, the screw portion are built in the thread cavity, and the top of the screw rod is hemisphere；

Probe station, the probe station is located at the upper end of the pedestal and the pedestal supports the probe station by support portion, The screw rod, which is contacted by hemisphere with the probe station, and the screw rod is by rotation makes hemisphere head on probe station rotation, described There are four probe, the probe is used to contact the integrity of electrode and detecting electrode for the upper end installation of probe station；

Supporting leg, the lower end of the supporting leg are fixedly connected with the pedestal by nut, and the middle-end of the supporting leg is equipped with bearing, described The side interconnecting piece of probe station, which is embedded in bearing, rotates the probe station relative to supporting leg；

Loading frame, the upper end of the supporting leg are fixedly connected with the loading frame by nut；

The upper end of sample rest device, the sample rest device is fixedly connected with the loading frame.

5. the extremely low temperature four-point probe measurment device of a kind of ultrahigh vacuum according to claim 4, which is characterized in that the probe The centre of platform and the supporting leg is equipped with torsional spring, and the torsional spring is installed on the side interconnecting piece of the probe station, and the torsional spring is used for Eliminate thread pitch.

6. the extremely low temperature four-point probe measurment device of a kind of ultrahigh vacuum according to claim 4, which is characterized in that the sample Rest device is equipped with the first sample carrier and the second sample carrier, and first sample carrier is fixedly connected with second sample carrier, described First sample carrier is located at the lower section of second sample carrier, and first sample carrier is located at the top of the probe.

7. the extremely low temperature four-point probe measurment device of a kind of ultrahigh vacuum according to claim 6, which is characterized in that described second Sample carrier is the sample carrier with magnetic force, and second sample carrier is for increasing magnetic field environment.

8. the extremely low temperature four-point probe measurment device of a kind of ultrahigh vacuum according to claim 4, which is characterized in that the upper plate It is provided with copper pigtail, copper pigtail is for transmitting temperature.

9. the extremely low temperature four-point probe measurment device of a kind of ultrahigh vacuum according to claim 4, which is characterized in that the support Portion is used to limit the rotation angle of the probe station.

10. the extremely low temperature four-point probe measurment device of a kind of ultrahigh vacuum according to claim 4, which is characterized in that superelevation is true Empty extremely low temperature four-point probe measurment device part uses oxygen-free copper material.

Technical field

The invention belongs to probe measurement technique fields, and in particular to a kind of extremely low temperature four-point probe measurment device of ultrahigh vacuum and A kind of extremely low temperature four-point probe measurment method of ultrahigh vacuum.

Background technique

Electrode is one of electronics or electrical installation, equipment component, is used as conducting medium (solid, gas, vacuum or electricity Electrolyte solution) in input or two of derived current ends.One pole of input current anode or anode, a pole of discharging current Cathode or cathode.Electrode has various types, such as cathode, anode, welding electrode, electric furnace electrode.

It needs to detect the integrity to ensure electrode after electrode production, but lacks currently on the market in extremely low temperature, super A kind of detecting electrode integrity and lossless detection device under high vacuum environment.

Summary of the invention

It is and micro- the main purpose of the present invention is to provide the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum Mirror is used cooperatively, and adds the integrity of logical direct current test sample.

Another object of the present invention is to provide the extremely low temperature four-point probe measurment devices and methods therefors of ultrahigh vacuum, use torsion Spring eliminates thread pitch, there is reset force.

The main purpose of the present invention is to provide the extremely low temperature four-point probe measurment devices and methods therefors of ultrahigh vacuum, have limit Position mechanism, limits the rotation angle of probe station, protects probe.

The main purpose of the present invention is to provide the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum, compatibility is super High vacuum, ultra-low temperature surroundings.

To achieve the above objectives, the present invention provides a kind of extremely low temperature four-point probe measurment method of ultrahigh vacuum, for detecting electricity Pole growth, comprising the following steps:

Step S1: sample grown electrode；

Step S2: the sample after growth electrode is placed in the first sample carrier；

Step S3: it rotates probe station and rotates to probe and touch to grow electricity in the first sample carrier by rotating screw rod At sample position after extremely；

Step S4: whether electrode is contacted by microscopic probe；

Step S5: by being powered to probe come the integrity of detecting electrode growth.

Further preferred technical solution as above-mentioned technical proposal, screw tip are hemisphere and pass through rotary screw Hemisphere is set to head on probe station rotation.

Further preferred technical solution as above-mentioned technical proposal, the step 5 are embodied as following steps:

Step S5.1: electrode growth is intact if electrode conduction after probe energization；

Step S5.2: electrode growth is not intact if electrode is not turned on after probe energization.

To achieve the above objectives, the present invention provides a kind of extremely low temperature four-point probe measurment device of ultrahigh vacuum, comprising:

Pedestal, the pedestal are equipped with thread cavity and support portion；

Screw rod, the screw portion are built in the thread cavity, and the top of the screw rod is hemisphere；

Probe station, the probe station is located at the upper end of the pedestal and the pedestal supports the probe by support portion Platform, the screw rod, which is contacted by hemisphere with the probe station, and the screw rod is by rotation makes hemisphere head on probe station rotation, There are four probe, the probe is used to contact the integrity of electrode and detecting electrode for the upper end installation of the probe station.

Supporting leg, the lower end of the supporting leg are fixedly connected with the pedestal by nut, and the middle-end of the supporting leg is equipped with bearing, The side interconnecting piece of the probe station, which is embedded in bearing, rotates the probe station relative to supporting leg；

Loading frame, the upper end of the supporting leg are fixedly connected with the loading frame by nut；

The upper end of sample rest device, the sample rest device is fixedly connected with the loading frame.

The centre of further preferred technical solution as above-mentioned technical proposal, the probe station and the supporting leg is equipped with Torsional spring, the torsional spring are installed on the side interconnecting piece of the probe station, and the torsional spring is for eliminating thread pitch.

Further preferred technical solution as above-mentioned technical proposal, the sample rest device be equipped with the first sample carrier and Second sample carrier, first sample carrier are fixedly connected with second sample carrier, and first sample carrier is located at described second The lower section of sample carrier, first sample carrier are located at the top of the probe.

Further preferred technical solution as above-mentioned technical proposal, second sample carrier are the sample with magnetic force Support, second sample carrier is for increasing magnetic field environment.

Further preferred technical solution as above-mentioned technical proposal, the loading frame are equipped with copper pigtail, the copper pigtail Son is for transmitting temperature.

Further preferred technical solution as above-mentioned technical proposal, the support portion is for limiting the probe station Rotate angle.Further preferred technical solution as above-mentioned technical proposal, the extremely low temperature four-point probe measurment device of ultrahigh vacuum Part uses oxygen-free copper material.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum of the invention.

Fig. 2 is the structural schematic diagram of the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum of the invention.

Fig. 3 is the structural schematic diagram of the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum of the invention.

Fig. 4 is the structural schematic diagram of the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum of the invention.

Fig. 5 is the structural schematic diagram of the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum of the invention.

Appended drawing reference includes: 10, pedestal；11, support portion；20, screw rod；30, probe station；31, probe；32, side connects Portion；33, torsional spring；40, supporting leg；41, bearing；50, loading frame；60, sample rest device；61, the first sample carrier；62 second samples Support.

Specific embodiment

It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It defines in the following description Basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and do not carry on the back Other technologies scheme from the spirit and scope of the present invention.

Referring to Figure 1 of the drawings, Fig. 1 is the structure of the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum of the invention Schematic diagram, Fig. 2 are the structural schematic diagrams of the extremely low temperature four-point probe measurment devices and methods therefor of ultrahigh vacuum of the invention, and Fig. 3 is this The structural schematic diagram of the extremely low temperature four-point probe measurment devices and methods therefor of the ultrahigh vacuum of invention, Fig. 4 are ultrahigh vacuum of the invention The structural schematic diagram of extremely low temperature four-point probe measurment devices and methods therefor, Fig. 5 are that extremely low four probe of temperature of ultrahigh vacuum of the invention is surveyed Measure the structural schematic diagram of devices and methods therefor.

In a preferred embodiment of the invention, those skilled in the art should be noted that copper pigtail according to the present invention, torsional spring Etc. the prior art can be considered as.

Preferred embodiment.

The invention discloses a kind of extremely low temperature four-point probe measurment methods of ultrahigh vacuum, grow for detecting electrode, including with Lower step:

Step S1: sample grown electrode；

Step S2: the sample after growth electrode is placed in the first sample carrier 61；

Step S3: so that probe station 30 is rotated and is rotated to probe 31 by rotation screw rod 20 and touch the first sample carrier 61 At sample position after middle growth electrode；

Step S4: whether electrode is contacted by microscopic probe；

Step S5: pass through the integrity grown to the energization of probe 31 come detecting electrode.

Particularly, hemisphere is made to head on the rotation of probe station 30 for hemisphere at the top of screw rod 20 and by rotary screw 20.

More particularly, the step 5 is embodied as following steps:

Step S5.1: electrode growth is intact if electrode conduction after the energization of probe 31；

Step S5.2: electrode growth is not intact if electrode is not turned on after the energization of probe 31.

The invention discloses a kind of extremely low temperature four-point probe measurment devices of ultrahigh vacuum, grow for detecting electrode, comprising:

Pedestal 10, the pedestal are equipped with thread cavity and support portion 11；

Screw rod 20, the screw portion are built in the thread cavity, and the top of the screw rod is hemisphere；

Probe station 30, the probe station 30 is located at the upper end of the pedestal 10 and the pedestal 10 is by support portion 11 The probe station 30 is supportted, the screw rod 20, which is contacted by hemisphere with the probe station 30, and the screw rod 20 is by rotation makes half Top dome probe station 30 rotate, there are four probes 31 for the installation of the upper end of the probe station 30, and the probe 31 is for contacting electrode And the integrity of detecting electrode.

Supporting leg 40, the lower end of the supporting leg are fixedly connected with the pedestal 10 by nut, and the middle-end of the supporting leg 40 is set There is bearing 41, the side interconnecting piece 32 of the probe station 30, which is embedded in bearing 41, revolves the probe station 30 relative to supporting leg 40 Turn；

Loading frame 50, the upper end of the supporting leg 40 are fixedly connected with the loading frame 50 by nut；

Sample rest device 60, the upper end of the sample rest device 60 are fixedly connected with the loading frame 50.

Further, the centre of the probe station 30 and the supporting leg 40 is equipped with torsional spring 33, the torsional spring 33 is installed on The side interconnecting piece 32 of the probe station 30, the torsional spring 33 is for eliminating thread pitch.

Moreover, the sample rest device 60 be equipped with the first sample carrier 61 and the second sample carrier 62, described first Sample carrier 61 is fixedly connected with second sample carrier 62, and first sample carrier 61 is located under second sample carrier 62 Side, first sample carrier 61 are located at the top of the probe 31.

Preferably, second sample carrier 62 is the sample carrier with magnetic force, and second sample carrier 62 is for increasing magnetic field Environment.

Preferably, the loading frame 50 is equipped with copper pigtail, and copper pigtail is for transmitting temperature.

Preferably, the support portion 11 is used to limit the rotation angle of the probe station 30.

Preferably, the extremely low temperature four-point probe measurment device part of ultrahigh vacuum uses oxygen-free copper material.

It is noted that the technical characteristics such as copper pigtail, torsional spring that present patent application is related to should be considered as existing skill Art, specific structure, working principle and the control mode that may relate to, the space layout mode of these technical characteristics use this The conventional selection in field is not construed as where the inventive point of the invention patent, and the invention patent is not done further specific Expansion is described in detail.

For a person skilled in the art, technical solution documented by foregoing embodiments can still be repaired Change or equivalent replacement of some of the technical features, it is all within the spirits and principles of the present invention, made any to repair Change, equivalent replacement, improvement etc., should be included in protection scope of the present invention.