阅读说明：本技术 超高真空原位微型薄膜与电极生长系统 (Ultrahigh vacuum original position miniature thin-film and electrode growth system ) 是由 王文杰 于 2019-09-06 设计创作，主要内容包括：本发明公开了一种超高真空原位微型薄膜与电极生长系统,包括超高超高真空腔体部和样品传递系统,所述样品传递系统包括第一传样杆和第二传样杆,所述第一传样杆和所述第二传样杆分别位于所述超高真空腔体部的侧端并且分别与超高真空腔体部刀口法兰密封连接；所述样品制备机构包括样品台和位置调节机构,所述样品制备机构位于所述超高真空腔体部的上端并且部分内嵌于所述超高真空腔体部,所述样品制备机构与所述超高真空腔体部通过刀口法兰密封连接。本发明公开的一种超高真空原位微型薄膜与电极生长系统,其可以通过在超高真空内原位薄膜生长和电极生长制作微型复杂图案的输运测试样品。(The invention discloses a kind of ultrahigh vacuum original position miniature thin-films and electrode growth system, including superelevation ultrahigh vacuum cavity portion and sample transmission system, the sample transmission system includes the first sample transmission rod and the second sample transmission rod, and first sample transmission rod and second sample transmission rod are located at the side in the ultrahigh vacuum cavity portion and are tightly connected respectively with ultrahigh vacuum cavity portion edge of a knife flange；The sample preparation mechanism includes sample stage and position adjusting mechanism, the sample preparation mechanism is located at the upper end in the ultrahigh vacuum cavity portion and partial embedding is in the ultrahigh vacuum cavity portion, and the sample preparation mechanism is tightly connected with the ultrahigh vacuum cavity portion by edge of a knife flange.A kind of ultrahigh vacuum original position miniature thin-film disclosed by the invention and electrode growth system, can by ultrahigh vacuum in-situ film growth and electrode growth make miniature complex pattern transport test sample.)

1. a kind of ultrahigh vacuum original position miniature thin-film and electrode growth system characterized by comprising

Ultrahigh vacuum cavity portion and sample transmission system, the sample transmission system include the first sample transmission rod and the second sample transmission rod, First sample transmission rod and second sample transmission rod be located at the side in the ultrahigh vacuum cavity portion and respectively with superelevation Vacuum cavity portion edge of a knife flange is tightly connected；

Sample preparation mechanism, the sample preparation mechanism include sample stage and position adjusting mechanism, sample preparation mechanism position In the ultrahigh vacuum cavity portion upper end and partial embedding in the ultrahigh vacuum cavity portion, the sample preparation mechanism with The ultrahigh vacuum cavity portion is tightly connected by edge of a knife flange, and the position adjusting mechanism is located at the upper end of the sample stage simultaneously And it is fixed by the connecting rod connection, the position adjusting mechanism is used for adjusting position；

Vacuum measurement system, the vacuum measurement system are located at the side in the ultrahigh vacuum cavity portion and true with the superelevation Cavity body portion edge of a knife flange is tightly connected.

2. a kind of ultrahigh vacuum original position miniature thin-film according to claim 1 and electrode growth system, which is characterized in that institute Stating sample stage includes sample warm table, sample degasification platform, precise 2-D mask plate driving mechanism, mask plate, the sample heating Platform is located at the upper end of the mask plate, and for the sample warm table for heating sample, the sample degasification platform is located at the sample The upper end of warm table, the sample degasification platform are used for sample degasification, and the mask plate is located at precise 2-D mask plate driving The upper end of mechanism, the precise 2-D mask plate driving mechanism are used for the position of fine adjustment mask plate.

3. a kind of ultrahigh vacuum original position miniature thin-film according to claim 1 and electrode growth system, which is characterized in that super High-vacuum in-situ miniature thin-film and electrode growth system further include vacuum acquiring system, and the vacuum acquiring system is located at described super The one end of high vacuum cavity portion far from first sample transmission rod and with the ultrahigh vacuum cavity portion edge of a knife flange be tightly connected, The vacuum acquiring system is for obtaining vacuum environment.

4. a kind of ultrahigh vacuum original position miniature thin-film according to claim 1 and electrode growth system, which is characterized in that super High-vacuum in-situ miniature thin-film and electrode growth system further include film and electrode growth system, the film and electrode growth system Unite partial embedding in the ultrahigh vacuum cavity portion lower end and with the ultrahigh vacuum cavity portion edge of a knife flange be tightly connected.

5. a kind of ultrahigh vacuum original position miniature thin-film according to claim 4 and electrode growth system, which is characterized in that institute Stating film and electrode growth system includes evaporation source, and the evaporation source includes high temperature thermal evaporation sources and beam bombardment evaporation source.

6. a kind of ultrahigh vacuum original position miniature thin-film according to claim 1 and electrode growth system, which is characterized in that super High-vacuum in-situ miniature thin-film and electrode growth system further include observation system, and the observation system includes that the first focal length is micro- Mirror, the second long focusing microscope, reflective mirror, mirror position regulating mechanism, the first long focusing microscope and second focal length Microscope is located at the side in the ultrahigh vacuum cavity portion and close with the ultrahigh vacuum cavity portion edge of a knife flange respectively Envelope connection, the reflective mirror are built in the lower end in the ultrahigh vacuum cavity portion, and the mirror position regulating mechanism is located at institute It states the lower end in ultrahigh vacuum cavity portion and is drivingly connected with the reflective mirror, the mirror position regulating mechanism is for adjusting The position of the reflective mirror.

7. a kind of ultrahigh vacuum original position miniature thin-film according to claim 6 and electrode growth system, which is characterized in that institute Stating observation system further includes observation window baffle and observation window barrier driving mechanism, and it is true that the observation window baffle is built in the superelevation Cavity body portion and for protecting the described first long focusing microscope and the microscopical observation window of the second focal length, the observation window Barrier driving mechanism through the ultrahigh vacuum cavity portion upper end and connect with the observation window barrier driving, the sight Cha Chuan barrier driving mechanism is for driving the observation window baffle.

8. a kind of ultrahigh vacuum original position miniature thin-film according to claim 3 and electrode growth system, which is characterized in that institute Stating vacuum acquiring system includes mechanical pump, molecular pump, ionic pump and titanium sublimation pump.

9. a kind of ultrahigh vacuum original position miniature thin-film according to claim 6 and electrode growth system, which is characterized in that institute It states the first long focusing microscope and the second long focusing microscope is respectively equipped with micro-adjusting mechanism.

10. a kind of ultrahigh vacuum original position miniature thin-film according to claim 1 and electrode growth system, which is characterized in that Ultrahigh vacuum original position miniature thin-film further includes that gate valve interface is docked in extension with electrode growth system, and gate valve is docked in the extension Interface be located at the one end of the ultrahigh vacuum cavity portion far from second sample transmission rod and with ultrahigh vacuum cavity portion knife Mouth flange seal connection.

Technical field

The invention belongs to transport test sample preparation technical field, and in particular to a kind of ultrahigh vacuum original position miniature thin-film with Electrode growth system.

Background technique

In material science and Condensed Matter Physics research, transport property is the critical nature of material.Ultrahigh vacuum is thin in situ Film and electrode growth system can be by the way that in-situ film is grown in ultrahigh vacuum and electrode growth makes miniature complex pattern Test sample is transported, and can be docked with test macro is transported, the transmission of sample is realized under ultravacuum environment and transports measurement.

Current existing in-situ film and electrode growth system are more unsatisfactory for present market environment, therefore further change Into.

Summary of the invention

It, can be with the main purpose of the present invention is to provide a kind of ultrahigh vacuum original position miniature thin-film and electrode growth system By in ultrahigh vacuum in-situ film growth and electrode growth make miniature complex pattern transport test sample.

Another object of the present invention is to provide a kind of ultrahigh vacuum original position miniature thin-films and electrode growth system, have Efficiently, quickly the advantages that.

To achieve the above objectives, the present invention provides a kind of ultrahigh vacuum original position miniature thin-film and electrode growth system, comprising:

Ultrahigh vacuum cavity portion and sample transmission system, the sample transmission system include that the first sample transmission rod and second pass sample Bar, first sample transmission rod and second sample transmission rod be located at the side in the ultrahigh vacuum cavity portion and respectively with it is super High vacuum cavity portion edge of a knife flange is tightly connected；

Sample preparation mechanism, the sample preparation mechanism include sample stage and position adjusting mechanism, the sample preparation machine Structure is located at the upper end in the ultrahigh vacuum cavity portion and partial embedding in the ultrahigh vacuum cavity portion, the sample preparation machine Structure is tightly connected with the ultrahigh vacuum cavity portion by edge of a knife flange, and the position adjusting mechanism is located at the upper of the sample stage Connection is held and is fixed by the connecting rod, the position adjusting mechanism is used for adjusting position；

Vacuum measurement system, the vacuum measurement system are located at the side in the ultrahigh vacuum cavity portion and surpass with described High vacuum cavity portion edge of a knife flange is tightly connected.

Further preferred technical solution as above-mentioned technical proposal, the sample stage include sample warm table, sample Degasification platform, precise 2-D mask plate driving mechanism, mask plate, the sample warm table is located at the upper end of the mask plate, described For sample warm table for heating sample, the sample degasification platform is located at the upper end of the sample warm table, the sample degasification platform For sample degasification, the mask plate is located at the upper end of the precise 2-D mask plate driving mechanism, the precise 2-D exposure mask Version driving mechanism is used for the position of fine adjustment mask plate.

Further preferred technical solution as above-mentioned technical proposal, ultrahigh vacuum original position miniature thin-film and electrode growth System further includes vacuum acquiring system, and the vacuum acquiring system is located at the ultrahigh vacuum cavity portion and passes sample far from described first It one end of bar and is tightly connected with the ultrahigh vacuum cavity portion edge of a knife flange, the vacuum acquiring system is for obtaining vacuum Environment.

Further preferred technical solution as above-mentioned technical proposal, ultrahigh vacuum original position miniature thin-film and electrode growth System further includes film and electrode growth system, and the film and electrode growth components of system as directed are embedded in the ultrahigh vacuum cavity The lower end in portion and with the ultrahigh vacuum cavity portion edge of a knife flange be tightly connected.

Further preferred technical solution as above-mentioned technical proposal, the film and electrode growth system include evaporation Source, the evaporation source include high temperature thermal evaporation sources and beam bombardment evaporation source.

Further preferred technical solution as above-mentioned technical proposal, ultrahigh vacuum original position miniature thin-film and electrode growth System further includes observation system, and the observation system includes the first long focusing microscope, the second long focusing microscope, reflective mirror, reflective Mirror position adjusting mechanism, the first long focusing microscope and the second long focusing microscope are located at the ultrahigh vacuum cavity It the side in portion and is tightly connected respectively with the ultrahigh vacuum cavity portion edge of a knife flange, the reflective mirror is built in the superelevation The lower end in vacuum cavity portion, the mirror position regulating mechanism be located at the lower end in the ultrahigh vacuum cavity portion and with it is described Reflective mirror is drivingly connected, and the mirror position regulating mechanism is used to adjust the position of the reflective mirror.

Further preferred technical solution as above-mentioned technical proposal, the observation system further include observation window baffle and Observation window barrier driving mechanism, the observation window baffle are built in the ultrahigh vacuum cavity portion and for protecting described first Long focusing microscope and the microscopical observation window of the second focal length, observation window barrier driving mechanism are true through the superelevation It the upper end in cavity body portion and is connect with the observation window barrier driving, observation window barrier driving mechanism is described for driving Observation window baffle.

Further preferred technical solution as above-mentioned technical proposal, the vacuum acquiring system include mechanical pump, divide Son pump, ionic pump and titanium sublimation pump.

Further preferred technical solution as above-mentioned technical proposal, the first long focusing microscope and second length Focusing microscope is respectively equipped with micro-adjusting mechanism.

Further preferred technical solution as above-mentioned technical proposal, ultrahigh vacuum original position miniature thin-film and electrode growth System further includes extension docking gate valve interface, and it is separate that the extension docking gate valve interface is located at the ultrahigh vacuum cavity portion One end of second sample transmission rod and with the ultrahigh vacuum cavity portion edge of a knife flange be tightly connected.

Detailed description of the invention

Fig. 1 is ultrahigh vacuum original position miniature thin-film and electrode growth system structure diagram of the invention.

Fig. 2 is ultrahigh vacuum original position miniature thin-film and electrode growth system structure diagram of the invention.

Fig. 3 is ultrahigh vacuum original position miniature thin-film and electrode growth system structure diagram of the invention.

Appended drawing reference includes: 10, ultrahigh vacuum cavity portion；21, the first sample transmission rod；22, the second sample transmission rod；30, sample system Standby host structure；310, sample stage；31, precise 2-D mask plate driving mechanism；32, degasification platform；33, sample warm table；34, exposure mask Version；35, position adjusting mechanism；50, vacuum acquiring system；60, film and electrode growth system；71, the first long focusing microscope； 72, the second long focusing microscope；74, mirror position regulating mechanism；75, observation window baffle；76, observation window barrier driving mechanism； 80, extension docking gate valve interface.

Specific embodiment

It is described below for disclosing the present invention so that those skilled in the art can be realized the present invention.It is excellent in being described below Embodiment is selected to be only used as illustrating, it may occur to persons skilled in the art that other obvious modifications.It defines in the following description Basic principle of the invention can be applied to other embodiments, deformation scheme, improvement project, equivalent program and do not carry on the back Other technologies scheme from the spirit and scope of the present invention.

Referring to Figure 1 of the drawings, Fig. 1 is that ultrahigh vacuum original position miniature thin-film and electrode growth system structure of the invention are illustrated Figure, Fig. 2 are ultrahigh vacuum original position miniature thin-film and electrode growth system structure diagram of the invention, and Fig. 3 is of the invention surpasses High-vacuum in-situ miniature thin-film and electrode growth system structure diagram.

In a preferred embodiment of the invention, those skilled in the art should be noted that reflective mirror according to the present invention, focal length Microscope etc. can be considered as the prior art.

Preferred embodiment.

The present invention provides a kind of ultrahigh vacuum original position miniature thin-film and electrode growth system, comprising:

Ultrahigh vacuum cavity portion 10 and sample transmission system (not shown), the sample transmission system include the first sample transmission rod 21 and second sample transmission rod 22, first sample transmission rod 21 and second sample transmission rod 22 are located at the ultrahigh vacuum cavity portion 10 side and respectively with 10 edge of a knife flange of ultrahigh vacuum cavity portion be tightly connected；

Sample preparation mechanism 30, the sample preparation mechanism 30 include sample stage 310 and position adjusting mechanism 35, the sample Product preparing mechanism 30 is located at the upper end in the ultrahigh vacuum cavity portion 10 and partial embedding is in the ultrahigh vacuum cavity portion 10, The sample preparation mechanism 30 is tightly connected with the ultrahigh vacuum cavity portion 10 by edge of a knife flange, the position adjusting mechanism 35 are located at the upper end of the sample stage 310 and are fixed by the connecting rod connection, and the position adjusting mechanism 35 is for adjusting position It sets；

Vacuum measurement system, the vacuum measurement system are located at the side in the ultrahigh vacuum cavity portion and surpass with described High vacuum cavity portion edge of a knife flange is tightly connected.

Particularly, the sample stage 310 includes sample warm table 33, sample degasification platform 32, the drive of precise 2-D mask plate Motivation structure 31, mask plate 34, the sample warm table 33 are located at the upper end of the mask plate 34, and the sample warm table 33 is used for Sample is heated, the sample degasification platform 32 is located at the upper end of the sample warm table 33, and the sample degasification platform 32 is used for sample Degasification, the mask plate 34 are located at the upper end of the precise 2-D mask plate driving mechanism 31, and the precise 2-D mask plate drives Motivation structure 31 is used for the position of fine adjustment mask plate.

More particularly, ultrahigh vacuum original position miniature thin-film and electrode growth system further include vacuum acquiring system 50, institute State vacuum acquiring system 50 be located at the one end of the ultrahigh vacuum cavity portion 10 far from first sample transmission rod 21 and with it is described 10 edge of a knife flange of ultrahigh vacuum cavity portion is tightly connected, and the vacuum acquiring system 50 is for obtaining vacuum environment.

Further, ultrahigh vacuum original position miniature thin-film and electrode growth system further include film and electrode growth system 60, the film and 60 partial embedding of electrode growth system in the ultrahigh vacuum cavity portion 10 lower end and with the superelevation 10 edge of a knife flange of vacuum cavity portion is tightly connected.

Moreover, the film and electrode growth system 60 include evaporation source, and the evaporation source includes high warm Evaporation source and beam bombardment evaporation source.

Preferably, ultrahigh vacuum original position miniature thin-film and electrode growth system further include observation system, the observation system Including the first long focusing microscope 71, the second long focusing microscope 72, reflective mirror, mirror position regulating mechanism 74, described first is long Focusing microscope 71 and the second long focusing microscope 72 be located at the side in the ultrahigh vacuum cavity portion 10 and respectively with 10 edge of a knife flange of ultrahigh vacuum cavity portion is tightly connected, and the reflective mirror is built under the ultrahigh vacuum cavity portion 10 End, the mirror position regulating mechanism 74 are located at the lower end in the ultrahigh vacuum cavity portion and drive with the reflective mirror and connect It connects, the mirror position regulating mechanism 74 is used to adjust the position of the reflective mirror.

It is noted that the observation system further includes observation window baffle 75 and observation window barrier driving mechanism 76, institute It states observation window baffle 75 and is built in the ultrahigh vacuum cavity portion 10 and for protecting the described first long focusing microscope 71 and institute State the observation window of the second long focusing microscope 72, observation window barrier driving mechanism 76 is through the ultrahigh vacuum cavity portion 10 Upper end and be drivingly connected with the observation window baffle 75, observation window barrier driving mechanism 76 is for driving the observation Window baffle.

Preferably, the vacuum acquiring system 50 includes mechanical pump, molecular pump, ionic pump and titanium sublimation pump.

Preferably, the described first long focusing microscope 71 and the second long focusing microscope 72 are respectively equipped with micro-adjusting mechanism.

Preferably, ultrahigh vacuum original position miniature thin-film further includes that gate valve interface 80 is docked in extension with electrode growth system, The extension docking gate valve interface 80 is located at the one end of the ultrahigh vacuum cavity portion 10 far from second sample transmission rod 22 simultaneously And it is tightly connected with 10 edge of a knife flange of ultrahigh vacuum cavity portion.

Preferably, the CF flange-interface burnt there are six copolymerization is reserved below ultrahigh vacuum cavity portion 10, for installing evaporation Source expands thin-film device growing system and electrode growth system, and can grow thin-film device and the life of multilayer unlike material The electrode of long unlike material.Evaporation source form can be using high temperature thermal evaporation sources, beam bombardment evaporation source etc..

Preferably, the second sample transmission rod 22 can store multiple samples and mask plate simultaneously and be transmitted, and improve work Efficiency, while can be fallen back on completely in cavity branch pipe in system work, prevent sample and mask plate from polluting.

Preferably, first sample transmission rod 21 is band handgrip sample transmission rod, and second sample transmission rod 22 is that carry sample frame passes sample Bar.

Preferably, sample degasification platform 32 is carried out by the way of electron bombardment heating, and structure is simple, and heating speed is fast, can The advantages that up to temperature high (1200 degree).

Preferably, sample warm table 33 is by the way of resistance wire (tantalum wire or tungsten wire) DC heating, the uniform disk of resistance wire It is wound on sample carrier following position directly, is insulated using sintered alumina, compatible ultra-high vacuum environment, structure is simple, and heating temperature is equal Even, heating temperature can in real time be heated at high temperature substrate in growth sample up to 500 degree, make the device of growth Sample and electrode film are more uniform.

Preferably, for the device example minimum limit of growth up to 100 microns, the electrode spacing minimum of growth is micro- up to 10 Rice, electrode width is up to 10 microns.

Preferably, change the sample shape of growth, the electrode shape of growth and relative position and only need to change mask plate, Without change equipment other Anywhere, can very easily transport test and extensive sample form is provided, the electricity grown It is solid and reliable between pole and sample.

Preferably, ultravacuum cavity portion 10 uses high-quality stainless steel, and vacuum acquirement uses dry pump+molecular pump+ionic pump+titanium The combining form of sublimation pump carries out real-time monitoring using ion gauge, and system can be obtained and be maintained after abundant high-temperature baking The ultrahigh vacuum of 10-9pa.

Preferably, the ultrahigh vacuum cavity portion 10 be equipped with several flange ports, the flange port for sample transmit when into Row observation and observation inside cavity situation.

Preferably, invention additionally discloses a kind of ultrahigh vacuum original position miniature thin-films and electrode growth method, including following step It is rapid:

Step S1: sample carrier and mask plate are packed on the second sample transmission rod 22 of carry sample frame；

Step S2: the sample degasification platform 32 being placed on sample carrier using the first sample transmission rod 21 with handgrip on sample grown platform On, carry out high-temperature baking degasification；

Step S3: the sample carrier after baking is transferred on the sample warm table 33 on sample grown platform；

Step S4: mask plate 34 is transferred in precise 2-D mask plate driving mechanism 31；

Step S5: it is adjusted to sample grown position using the position adjusting mechanism of sample grown platform, while being also to see The center of examining system；

Step S6: 31 vertical shift mask plate 34 of precise 2-D mask plate driving mechanism adjustment mask plate 34 and sample are utilized Between vertical range, while using the second long focusing microscope 72 carry out calibration and calibration reach required distance；

Step S7: mask plate 34 is moved horizontally using precise 2-D mask plate driving mechanism 31 and adjusts difference on mask plate 34 Positional relationship between pattern and sample, while utilizing the first long focusing microscope 71 and reflective mirror and mirror position regulating mechanism 74 are demarcated and are calibrated the position of mask plate, retract reflective mirror after calibration is good；

Step S8: the heating function of starting sample warm table 33 stablizes it in required temperature；

Step S9: opening film growth system, carries out the growth of sample mark point；

Step S10: repeating step S7 makes position needed for device Thinfilm pattern counter sample on mask plate 34, in moving process Middle reference marker point position carries out position correction, finally obtains the thin-film device of required pattern, closes film growth system；

Step S11: position needed for repetition step S7 makes 34 top electrode growth patterns counter sample of mask plate；

Step S12: it opens electrode growth system and carries out electrode growth, finally obtain the electrode of required pattern, closed electrode Growing system closes 33 heating function of sample warm table；

Step 13: growth has the sample of electrode needed for obtaining, and it is defeated to be transferred to test equipment progress sample using sample transmission rod Fortune test.

It is noted that the technical characteristics such as reflective mirror, long focusing microscope that present patent application is related to should be considered as The prior art, specific structure, working principle and the control mode that may relate to, the space layout mode of these technical characteristics It using the conventional selection of this field, is not construed as where the inventive point of the invention patent, the invention patent is not done into one The specific expansion of step is described in detail.

For a person skilled in the art, technical solution documented by foregoing embodiments can still be repaired Change or equivalent replacement of some of the technical features, it is all within the spirits and principles of the present invention, made any to repair Change, equivalent replacement, improvement etc., should be included in protection scope of the present invention.