阅读说明：本技术 磁存储元件和电子设备 (Magnetic memory element and electronic equipment ) 是由 长谷直基 细见政功 肥后丰 大森广之 内田裕行 佐藤阳 于 2018-01-15 设计创作，主要内容包括：[待解决的问题]提供一种具有降低的写入电流同时保持存储层的磁性保留性能的磁存储元件和电子设备。[解决方案]磁存储元件包括：自旋轨道层,其沿一个方向延伸；写入线,其电耦合到所述自旋轨道层,并允许电流沿所述自旋轨道层的延伸方向流动；隧道结元件,其包括按顺序堆叠在所述自旋轨道层上的存储层、绝缘体层和磁化固定层；以及非磁性层,其膜厚度为2nm或更小,并设置在所述自旋轨道层和所述绝缘体层之间的任何堆叠位置。([problem to be solved] provides a kind of magnetic memory element and electronic equipment with reduced write current while the magnetic retention property that keeps accumulation layer.[solution] magnetic memory element includes: spin(-)orbit layer, is extended in one direction；Write line is electrically coupled to the spin(-)orbit layer, and electric current is allowed to flow along the extending direction of the spin(-)orbit layer；Tunnel junction element comprising accumulation layer, insulator layer and the magnetization fixed layer being sequentially stacked on the spin(-)orbit layer；And nonmagnetic layer, film thickness are 2nm or smaller, and any stacked position being arranged between the spin(-)orbit layer and the insulator layer.)

1. a kind of magnetic memory element, comprising:

Spin(-)orbit layer, extends in one direction；

Write line is electrically coupled to the spin(-)orbit layer, and electric current is allowed to flow along the extending direction of the spin(-)orbit layer；

Tunnel junction element comprising accumulation layer, insulator layer and the magnetization being sequentially stacked on the spin(-)orbit layer are fixed Layer；And

Nonmagnetic layer, film thickness are 2nm or smaller, and appointing between the spin(-)orbit layer and the insulator layer is arranged in What stacked position.

2. magnetic memory element as described in claim 1, wherein

The accumulation layer includes the first accumulation layer and the second accumulation layer, and

The nonmagnetic layer is clipped between first accumulation layer and second accumulation layer.

3. magnetic memory element as claimed in claim 2, wherein first accumulation layer and second accumulation layer are described in Nonmagnetic layer magnetic couplings each other.

4. magnetic memory element as claimed in claim 2, wherein the nonmagnetic layer is further disposed upon second accumulation layer Lower section.

5. magnetic memory element as claimed in claim 2 further comprises vertical auxiliary layer, it is arranged in the spin(-)orbit layer Between second accumulation layer and including the compound with NaCl base crystal structure.

6. magnetic memory element as described in claim 1, wherein vertical auxiliary layer, the nonmagnetic layer and the accumulation layer are by suitable Sequence is stacked on the spin(-)orbit layer, and the vertical auxiliary layer includes the compound with NaCl base crystal structure.

7. magnetic memory element as described in claim 1, wherein the accumulation layer includes magnetic material, the magnetic material has The composition of multiple element combination, the multiple element are selected from the group that is made up of: Co, Fe, B, Al, Si, Mn, Ga, Ge, Ni, Cr and V.

8. magnetic memory element as described in claim 1, wherein the nonmagnetic layer includes monofilm or laminated film, the single layer Film or laminated film include selected from one or more non-magnetic materials of group being made up of: Ru, Mo, Nb, HfB, Ta, W, Cr, MgO、AlO_x, MgS and MgCaS₂。

9. a kind of electronic equipment, comprising:

Memory uses magnetic memory element；And

Arithmetic processor handles information based on the information of storage in the memory,

The magnetic memory element, including

Spin(-)orbit layer, extends in one direction,

Write line is electrically coupled to the spin(-)orbit layer, and electric current is allowed to flow along the extending direction of the spin(-)orbit layer,

Tunnel junction element comprising accumulation layer, insulator layer and the magnetization being sequentially stacked on the spin(-)orbit layer are fixed Layer, and

Nonmagnetic layer, film thickness are 2nm or smaller, and appointing between the spin(-)orbit layer and the insulator layer is arranged in What stacked position.

Technical field

This disclosure relates to a kind of magnetic memory element and a kind of electronic equipment.

Background technique

With the continuous improvement of various information equipment performances, built-in storage device also shows in various information equipments The raising of integrated level, the raising of speed and power consumption reduction.Therefore, it is also being improved using the performance of the memory element of semiconductor.

For example, flash memory rather than hard disk drive device is just being used as large capacity file memory to become more and more popular. In addition, (magnetic random is deposited by such as FeRAM (ferroelectric RAM), PCRAM (phase change random access memory devices) or MRAM Access to memory) various types of memory elements, rather than NOR type flash memory and DRAM (dynamic random access memory), It is developed to as code storage or working storage.

For example, storing information in MRAM therein as code storage or working storage based on magnet magnetized direction Memory element and have received widespread attention.This is because MRAM allows high-speed cruising, and allow to be rewritten infinitely.

Particularly, STT-MRAM (spin moves square magnetic RAM) receives extensive pass as MRAM Note.STT-MRAM is real by using spin-torque reversal of magnetization and MTJ (to magnetic tunnel-junction) element injection spinning polarized electron Existing reversal of magnetization.

However, in fact, having can due to closer to each other for being written and reading the magnitude of current of information in STT-MRAM Reading interference can be caused, i.e., rewrites the information of storage when reading information.

In order to solve this problem, SOT-MRAM (spin(-)orbit torque magnetic random access memory) is just under consideration. After information is written, SOT-MRAM reverses the direction of magnetization of accumulation layer using spin(-)orbit torque, and spin(-)orbit torque is by making Caused by current direction is set as the spin polarization generated when the metal layer contacted with accumulation layer.

For example, PTL 1 described below is disclosed and a kind of is reversed accumulation layer magnetization side using spin To magnetic memory.

Quotation list

Patent document

PTL 1: Japanese Unexamined Patent Application Publication 2014-045196

Summary of the invention

The problem to be solved in the present invention

However, magnetic memory disclosed in above-mentioned PTL 1 is related to a large amount of electric currents for writing information into accumulation layer.It is another Aspect reduces the magnetic of accumulation layer and retains when reducing the volume of accumulation layer to reduce the write current for being supplied to accumulation layer Performance.Therefore, magnetic memory disclosed in above-mentioned PTL 1 is difficult to balance the reduction of write current and the magnetic retention of accumulation layer Energy.

Therefore, the disclosure, which proposes that one kind is likely to provide, can reduce write current while keeping accumulation layer in SOT-MRAM Magnetic retention property novelty and improved magnetic memory element and electronic equipment.

Solution to the problem

According to the disclosure, a kind of magnetic memory element is provided comprising: spin(-)orbit layer extends in one direction；Write-in Line is electrically coupled to the spin(-)orbit layer, and electric current is allowed to flow along the extending direction of the spin(-)orbit layer；Tunneling junction element Part comprising accumulation layer, insulator layer and the magnetization fixed layer being sequentially stacked on the spin(-)orbit layer；And it is non magnetic Layer, film thickness is 2nm or smaller, and any stacking position between the spin(-)orbit layer and the insulator layer is arranged in It sets.

In addition, providing a kind of electronic equipment according to the disclosure, comprising: memory uses magnetic memory element；And it calculates Art processor handles information based on the information of storage in the memory, wherein the magnetic memory element includes along one The spin(-)orbit layer of a direction extension is electrically coupled to the spin(-)orbit layer and allows electric current along the extension of the spin(-)orbit layer Write line, tunnel junction element and the nonmagnetic layer of direction flowing, the tunnel junction element include being sequentially stacked in the spin The film thickness of accumulation layer, insulator layer and magnetization fixed layer in rail layer, the nonmagnetic layer is 2nm or smaller, and is arranged Any stacked position between the spin(-)orbit layer and the insulator layer.

In the disclosure, nonmagnetic layer can be reflected towards spin or downwards spin, make it possible to spin polarization Electronics come improve accumulation layer the direction of magnetization reverse efficiency.

Invention effect

It can reduce write current as described above, the disclosure makes it possible to provide while the magnetic of accumulation layer being kept to retain The magnetic memory element and electronic equipment of performance.

It should be noted that said effect be not necessarily it is restrictive.It, may also herein in addition to or instead of said effect In any effect for listing, or any other effect understood from this specification.

Detailed description of the invention

[Fig. 1] Fig. 1 is the explanatory diagram for schematically showing the structure of SOT-MRAM.

[Fig. 2] Fig. 2 is the schematic cross section according to the magnetic memory element of the first configuration.

[Fig. 3] Fig. 3 is the schematic cross section according to the magnetic memory element of the second configuration.

[Fig. 4] Fig. 4 is the schematic cross section according to the magnetic memory element of third configuration.

[Fig. 5] Fig. 5 is the schematic cross section according to the magnetic memory element of the 4th configuration.

[Fig. 6] Fig. 6 is the perspective view of the exemplary appearance of electronic equipment.

[Fig. 7] Fig. 7 is the block diagram for showing the inside configuration of electronic equipment.

Specific embodiment

Hereinafter, preferred embodiment of the present disclosure is described in detail with reference to the accompanying drawings.It should be noted that in this specification In attached drawing, the component with essentially identical functional configuration is given the same reference numerals, therefore is omitted to these components Description.In addition, in the present specification, each layer of stacking direction is expressed as upward direction.

It should be noted that being described in the following order.

The general introduction of 1.SOT-MRAM

1.1. technical background relevant to the disclosure

1.2.SOT-MRAM structure

1.3.SOT-MRAM operation

2. one embodiment about the disclosure

2.1 first configurations

2.2 second configurations

The configuration of 2.3 thirds

2.4 the 4th configurations

3. the configuration of electronic equipment

<general introduction of 1.SOT-MRAM>

(1.1. technical background relevant to the disclosure)

It is powerful as the growth momentum of the Nonvolatile semiconductor memory device of representative using flash memory, by semiconductor memory component with Outer storage device (HDD (hard disk drive) equipment) etc. is expelled, to achieve significant progress.In addition, removing Data storage is outer, it is also contemplated that will include that the storage device of Nonvolatile semiconductor memory device is developed are as follows: store wherein program, The code of arithmetic etc. stores；And wherein interim storage may store in the work of parameter of required change etc. after program execution Device.

The specific example of Nonvolatile semiconductor memory device may include such as NOR type flash memory and NAND-type flash memory.This Outer or substitution, it is also contemplated that the residual polarization based on ferroelectric and wherein store the FeRAM of information, based on phase-change thin film Phase and wherein store the PCRAM of information, the direction of magnetization based on magnet and wherein store MRAM of information etc. as non-volatile Property semiconductor memory component.

Particularly, the direction of magnetization of the MRAM based on magnet and store information in wherein, thus allow with high speed and essence On ad infinitum rewrite information.Therefore, just in active development, in industrial automation equipment and aircraft circles, partially investment is real at present The MRAM of border application.

Now, the method depending on writing information into accumulation layer considers the several method of MRAM.

For example, proposing a kind of MRAM for reversing magnet magnetized direction in the electromagnetic field generated by route.However, this MRAM needs the electric current of several milliamperes of grades that could generate sufficiently strong electromagnetic field to reverse the direction of magnetization of magnet, therefore is reducing Power consumption has difficulties.In addition, this MRAM needs to generate the route of electromagnetic field for each magnetic memory element, therefore it is related to Realize the difficulty that size reduces.

For example, propose it is a kind of injected using spin-torque reversal of magnetization and by making current direction MTJ element spin pole Change electronics to lead to the STT-MRAM of reversal of magnetization.However, STT-MRAM is lower as memory element reliability, because for writing The magnitude of current for entering and reading information is closer to each other, it is therefore possible to cause reading interference, i.e., storage is rewritten when reading information Information.

Accordingly, it is considered to which SOT-MRAM (spin(-)orbit torque magnetic random access memory) is as the above-mentioned wiring method of solution The MRAM of relevant issues.SOT-MRAM reverses the magnetic properties of magnet by using spin(-)orbit torque.

(structure of 1.2.SOT-MRAM)

Firstly, describing the basic structure of SOT-MRAM referring to Fig.1.Fig. 1 is the structure for schematically showing SOT-MRAM Explanatory diagram.

As shown in Figure 1, SOT-MRAM includes the spin(-)orbit layer 20 extended in one direction, is electrically coupled to spin(-)orbit layer 20 write line 30, and the tunnel junction element 10 being arranged on spin(-)orbit layer 20.In addition, read line 40 is via on surface Electrode 41 is coupled to tunnel junction element 10.The surface is towards the surface contacted with spin(-)orbit layer 20.Selection transistor via Electrode 21 is coupled to spin(-)orbit layer 20.

Spin(-)orbit layer 20 extends in one direction, and is subjected to spin polarization by making the electronics across spin(-)orbit layer 20 And generate spinning polarized electron.Li particular, it is possible to form spin(-)orbit layer 20 using sufficiently thin conductive material.It is described from It revolves in rail layer 20, when electronics passes through spin(-)orbit layer 20, electronics is polarized to above and below spin(-)orbit layer 20 it Between different directions.Spin(-)orbit layer 20 is by the storage of the electronic spin injection tunnel junction element 10 Jing Guo spin polarization Layer applies spin-torque with the magnetic moment to accumulation layer, to reverse the direction of magnetization of accumulation layer.

Write line 30 is electrically coupled to spin(-)orbit layer 20, and when writing information into tunnel junction element 10, allows electric current Extending direction along spin(-)orbit layer 20 flows.For example, write line 30 may be coupled to spin(-)orbit layer 20, and be arranged with from It revolves in the identical plane of rail layer 20.Write line 30 may include the conductive material commonly used in route or electrode, and can be with Including metals such as such as Cu, Ag, Au, Pt, Ti, W or Al, or the alloy containing this metalloid.

In the structure of tunnel junction element 10, the insulator layer of several nanometer scales is clipped between two ferromagnetic layers, and And it is arranged on spin(-)orbit layer 20.Particularly, in the structure of tunnel junction element 10, the storage with changeable magnetization direction The insulator layer of layer, several nanometer scales, and the magnetization fixed layer with fixed magnetisation direction are contacted from spin(-)orbit layer 20 Side stack in order.That is, tunnel junction element 10 may be so-called MTJ element.

When applying voltage between accumulation layer and magnetization fixed layer, tunnel junction element 10 can pass through tunnel magneto-resistance effect Tunnel current is applied to insulator layer.At this point, the resistance of insulator layer depends on accumulation layer and the corresponding magnetic of magnetization fixed layer It is parallel to each other or antiparallel change to change direction.Further, since the direction of magnetization of the accumulation layer contacted with spin(-)orbit layer 20 It can be controlled by the spinning polarized electron injected from spin(-)orbit layer 20, so tunnel junction element 10 can be based on the magnetic of accumulation layer Change the relative angle between direction and the direction of magnetization of magnetization fixed layer to store information in wherein.

Read line 40 is electrically coupled to tunnel junction element 10, and when reading information from tunnel junction element 10, allows electric current Flow to tunnel junction element 10.For example, cross-line 40 can be electrically coupled to the magnetization fixed layer of tunnel junction element 10 via electrode 41. Read line 40 may include the conductive material commonly used in route or electrode, and may include such as Cu, Ag, Au, Pt, Ti, W Or the metals such as Al, or the alloy containing this metalloid.

Tunnel junction element 10 is electrically coupled to read line 40 by electrode 41.Electrode 41 may include such as being commonly used for be similar to The conductive material of the route or electrode of write line 30 or read line 40.

Spin(-)orbit layer 20 is electrically coupled to selection transistor by electrode 21.The selection crystal that switching is electrically coupled by electrode 21 Pipe, it is determined that select or do not select tunnel junction element 10 when being written and reading information.Electrode 21 may include for example usually using In the conductive material for the route or electrode for being similar to write line 30 or read line 40.

(operation of 1.3.SOT-MRAM)

Then, the operation that information is written to above-mentioned SOT-MRAM and is read from information is described in detail.

As shown in Figure 1, electric current is flowed along direction shown in arrow 53 when information is written to SOT-MRAM.Particularly, Electric current flows to spin(-)orbit layer 20 from write line 30, to pass through 10 lower section of tunnel junction element.It should be noted that flowing through spin rail The electric current of channel layer 20 flows to ground via electrode 21.

The different spins being polarized to by the electronics of spin(-)orbit layer 20 between above and below spin(-)orbit layer 20 Direction.This allows the accumulation layer of electronic spin injection polarized above spin(-)orbit layer 20 to tunnel junction element 10 In.Therefore, in accumulation layer, accumulation layer magnetic moment receive the spin-torque from spinning polarized electron and from spin polarization electricity In the case that the received spin-torque of son is more than threshold value, the magnetic moment of accumulation layer starts precessional motion and reverses.In this way, SOT-MRAM By the spin between spin(-)orbit layer 20 and the accumulation layer of tunnel junction element 10, to reverse tunnel junction element The direction of magnetization of 10 accumulation layer, to write information into accumulation layer.

In addition, as shown in Figure 1, electric current is flowed along direction shown in arrow 51 when reading information from SOT-MRAM.It is special Not, electric current is flowed out from read line 40, and by tunnel junction element 10 to flow to spin(-)orbit layer 20.It should be noted that stream The electric current of overspin rail layer 20 flows to ground by electrode 21.

In tunnel junction element 10, the direction of magnetization of magnetization fixed layer and accumulation layer based on insertion insulator layer is put down each other Capable or antiparallel, the resistance of insulator layer is changed by tunnel magneto-resistance effect.Therefore, SOT-MRAM makes it possible to The resistance of tunnel junction element 10 is measured to detect the direction of magnetization of the accumulation layer of tunnel junction element 10.In this way, SOT-MRAM passes through The resistance of tunnel junction element 10 is detected to detect the direction of magnetization of the accumulation layer of tunnel junction element 10, is believed to be read from accumulation layer Breath.

Therefore, said write and read operation allow the direction of magnetization of accumulation layer of the SOT-MRAM based on tunnel junction element 10 Information is stored in wherein.

In SOT-MRAM, when writing information into accumulation layer, electric current does not flow to tunnel junction element 10, but electric current stream To the spin(-)orbit layer 20 contacted with the accumulation layer of tunnel junction element 10.Therefore, in SOT-MRAM, when information is written, electricity Insulator layer will not be destroyed by leading.In addition, in SOT-MRAM because current path when writing information into accumulation layer and Reading from accumulation layer, the current path under information state is different from each other, it is possible to prevent reading interference, that is, is reading letter The information of storage is rewritten when breath.Therefore, SOT-MRAM makes it possible to further increase the reliability of magnetic memory element.

Here, current density, J required for the direction of magnetization of the accumulation layer of SOT-MRAM is reversed_cIt is expressed as following formula 1。

[expression formula 1]

In above-mentioned expression formula 1, A is constant, and Ms is saturated magnetization, t_FIt is the film thickness of accumulation layer, θ_SHIt is to indicate to flow To spin(-)orbit layer 20 electric current be converted to spin(-)orbit torque basis spinning current efficiency spin Hall angle, Hk is The effective anisotropy magnetic field of accumulation layer, and H_exIt is external magnetic field.

In order to further decrease the power consumption of magnetic memory element, it is expected that reducing current density, J_c.However, due to the magnetic of accumulation layer Property retention property and " Hk × Ms × accumulation layer volume " (i.e. plane domain × t of accumulation layer_F) proportional, it is deposited so increasing Current density, J needed for the magnetic retention property of reservoir also will increase the direction of magnetization for reversing accumulation layer_c, such as can be from expression formula 1 finds out.Therefore, above-mentioned SOT-MRAM is difficult to be reduced to the write current of accumulation layer while keeping the magnetic retention of accumulation layer Energy.

The present invention is furtherd investigate to above problem etc. as a result, proposing a kind of technology according to the present invention.According to The magnetic memory element of one embodiment of the disclosure includes that film thickness is 2nm or smaller nonmagnetic layer, and the nonmagnetic layer is inserted Enter any stacked position between the spin(-)orbit layer and insulator layer of the SOT-MRAM.Therefore, according to the present embodiment Magnetic memory element makes it possible to improve the efficiency that spinning polarized electron reverses the accumulation layer direction of magnetization, to reduce write-in electricity Stream while the magnetic retention property for keeping accumulation layer.Hereinafter, it is described in detail according to the embodiment of the present invention magnetic storage member Part.

<one embodiment of 2. disclosure>

(configuration of 2.1. first)

Firstly, describing the first configuration of the magnetic memory element according to the present embodiment referring to Fig. 2.Fig. 2 is matched according to first The schematic cross section for the magnetic memory element set.

As shown in Fig. 2, including spin(-)orbit layer 20 and setting in spin(-)orbit layer according to the magnetic memory element of the first configuration Tunnel junction element 10 on 20.In addition, tunnel junction element 10 include be arranged on spin(-)orbit layer 20 the first accumulation layer 111, The nonmagnetic layer 120 that is arranged in the first accumulation layer 111, the second accumulation layer 112 being arranged on nonmagnetic layer 120, setting exist Insulator layer 130 in second accumulation layer 112, and the magnetization fixed layer 140 being arranged on insulator layer 130.

Spin(-)orbit layer 20 is subjected to spin polarization by making the electronics across spin(-)orbit layer 20 and generates spin polarization electricity Son, and by the first accumulation layer of the electronic spin injection of generation 111.In addition, spin(-)orbit layer 20 by using injection from Spin-torque is applied to the magnetic moment of the first accumulation layer 111 by rotation polarized electron, to reverse the direction of magnetization of the first accumulation layer 111.

Spin(-)orbit layer 20 can be by sufficiently thin for the electronics passed through to cause the conductive material of spin polarization to be formed.This Outside, spin(-)orbit layer 20 is preferably included with the conductive material compared with high spin-polarization efficiency.For example, spin(-)orbit layer 20 is preferred Ground includes selected from at least one conductive material of group being made up of: Al, Ti, V, Cr, Mn, Cu, Zn, Ag, Hf, Ta, W, Re, Pt, Au, Hg, Pb, Si, Ga, GaMn and GaAs.Furthermore, it is also possible to increase to spin(-)orbit layer 20 selected from the group being made up of At least one element: Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sb, Te, Hf, Ta, W, Re, Os, Ir, Pt, Ag, Au, Hg、Tl、Pb、Bi、Po、At、V、Cr、Mn、Fe、Co、Ni、P、S、Zn、Ga、Ge、As、Se、I、Lu、La、Ce、Pr、Nd、Pm、Sm、 Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb.

First accumulation layer 111 and the second accumulation layer 112 respectively include ferrimagnet, and are arranged in spin(-)orbit layer 20 On, while it being inserted into nonmagnetic layer 120 therebetween.In addition, the direction of magnetization of the first accumulation layer 111 and the second accumulation layer 112 is not It is fixed, but it is reversible switch to it is parallel or antiparallel with the direction of magnetization of magnetization fixed layer 140.

Since the first accumulation layer 111 and the second accumulation layer 112 are via 120 phase mutual magnetic coupling of nonmagnetic layer, so first deposits Reservoir 111 and the second accumulation layer 112 cannot reversed magnetization directions independently of each other.That is, reversing the first accumulation layer 111 In the case where one direction of magnetization in the second accumulation layer 112, another in the first accumulation layer 111 and the second accumulation layer 112 The direction of magnetization also due to magnetic coupling and reverse.Therefore, because the first accumulation layer 111, the second accumulation layer 112 and nonmagnetic layer 120 as single accumulation layer collective effect, it is possible to the magnetic retention property having be similar to volume with first storage The magnetic retention property of the 111, second accumulation layer 112 of layer accumulation layer identical with the total volume of nonmagnetic layer 120.

On the other hand, when writing information into the first accumulation layer 111 and the second accumulation layer 112, the first accumulation layer 111 is reversed Current threshold needed for the direction of magnetization with the second accumulation layer 112 be by the first accumulation layer 111 determine, spinning polarized electron from Spin(-)orbit layer 20 is injected into first accumulation layer 111.Therefore, the first accumulation layer 111 and the second accumulation layer are write information into The size of required write current is determined by the volume of the first accumulation layer 111 when 112.Therefore, it is possible to by write current Size is reduced to the value corresponding to the first accumulation layer 111 in tunnel junction element 10.Therefore, in tunnel junction element 10, it is possible to It improves magnetization retention property and inhibits write current simultaneously.

First accumulation layer 111 and the second accumulation layer 112 respectively preferably include ferrimagnet, the ferrimagnet tool There are many compositions of element combinations.For example, multiple element is selected from the group that is made up of: Co, Fe, B, Al, Si, Mn, Ga, Ge, Ni, Cr and V.In addition, the first accumulation layer 111 and the second accumulation layer 112 may respectively have simple layer, may have including insulation Body layer and magnetospheric stacking, or may have including oxide layer and magnetospheric stacking.In addition, the first accumulation layer 111 and Two accumulation layers 112 respectively may include identical ferrimagnet or different ferrimagnets.

Nonmagnetic layer 120 includes that film thickness is 2nm or smaller non-magnetic material, and is clipped in the first accumulation layer 111 and the Between two accumulation layers 112.Nonmagnetic layer 120 passes through with the three level stack including ferromagnetic body, nonmagnetic material and ferromagnetic body Structure couples to form antiferromagnetic exchange, thus magnetic couplings the first accumulation layer 111 and the second accumulation layer 112.It should be noted that non-magnetic Property layer 120 film thickness be greater than 2nm and undesirable because not generated between the first accumulation layer 111 and the second accumulation layer 112 Antiferromagnetic exchange coupling, therefore the first accumulation layer 111 and the second accumulation layer 112 not magnetic couplings.

In addition, nonmagnetic layer 120, which serves as, is preferentially reflected towards spin or the spin reflecting layer spinned downwards, thus prevent from The spinning polarized electron that spin(-)orbit layer 20 injects the first accumulation layer 111 is diffused into 112 side of the second accumulation layer.Particularly, non-magnetic Property layer 120 reflect spinning polarized electron, and thus makes it possible to by spinning polarized electron be limited in the first accumulation layer 111 and spin Between rail layer 20.Therefore, nonmagnetic layer 120 can improve the magnetization side of the first accumulation layer 111 by spinning polarized electron To the efficiency of reverse.It should be noted that the film thickness of nonmagnetic layer 120 is greater than 2nm and undesirable, because nonmagnetic layer 120 is difficult to fill When spin reflecting layer.

Nonmagnetic layer 120 can be formed by non-magnetic material.For example, it is possible to be formed by monofilm or laminated film non-magnetic Property layer 120, the monofilm uses selected from the material of group being made up of: Ru, Mo, Nb, HfB, Ta, W, Cr, MgO, AlOx, MgS and MgCaS₂, the laminated film uses above two or two or more materials.

Insulator layer 130 includes insulating material, and is clipped between the second accumulation layer 112 and magnetization fixed layer 140.Insulation Body layer 130 is clipped between the second accumulation layer 112 and magnetization fixed layer 140, to serve as the tunnel knot for realizing tunnel magneto-resistance effect Element.

Insulator layer 130 can be by using various insulators, dielectric or semiconductor (such as MgO, Al₂O₃、AlN、SiO₂、 Bi₂O₃、MgF₂、CaF、SrTiO₂、AlLaO₃Or Al-N-O) formed.In addition, insulator layer 130 is formed preferably using MgO, As it is possible that keeping the change rate of magnetic reluctance (i.e. MR ratio) of tunnel junction element 10 higher.

Magnetization fixed layer 140 includes ferrimagnet, and is arranged on insulator layer 130.Referring to the first accumulation layer 111 On the basis of the direction of magnetization of the second accumulation layer 112, the direction of magnetization of magnetization fixed layer 140 is fixed on predetermined direction.Magnetization Fixing layer 140 preferably includes the ferrimagnet that the direction of magnetization is difficult to change, and is stored in because magnetization fixed layer 140 can be used as The reference of information in tunnel junction element 10.For example, magnetization fixed layer 140 may include normal with high-coercive force or large magnetic resistance Buddhist nun Several ferrimagnets.In addition, magnetization fixed layer 140 may have biggish thickness, so that its direction of magnetization be made to be difficult to change.

For example, magnetization fixed layer 140 preferably includes ferrimagnet, the ferrimagnet is combined with multiple element Composition.Multiple element is selected from the group being made up of: Co, Fe, B, Al, Si, Mn, Ga, Ge, Ni, Cr and V.It should be noted that magnetization Fixing layer 140 may have simple layer, may have including insulator layer and magnetospheric stacking, or may have including oxidation Layer and magnetospheric stacking.

Here, the direction of magnetization of the first accumulation layer 111, the second accumulation layer 112 and magnetization fixed layer 140 respectively can be vertical Directly in the direction of film surface, or it can be the in-plane relative to film surface.Film surface is perpendicular in the direction of magnetization In the case where direction, the magnetic memory element including tunnel junction element 10 potentially acts as perpendicular magnetization SOT-MRAM.In addition, magnetizing In the case that direction is the in-plane relative to film surface, the magnetic memory element including tunnel junction element 10 potentially acts as plane Magnetize SOT-MRAM.

According to it is as described above first configuration, between spin(-)orbit layer 20 and insulator layer 130 be arranged film thickness 2nm or Nonmagnetic layer 120 below, and nonmagnetic layer 120 reflects the spinning polarized electron injected from spin(-)orbit layer 20.Therefore, have The efficiency that the direction of magnetization of the first accumulation layer 111 reverses may be improved by spinning polarized electron.

In addition, according to first configuration, between the first accumulation layer 111 and the second accumulation layer 112 be arranged film thickness 2nm or with Under nonmagnetic layer 120, to allow magnetic couplings the first accumulation layer 111 and the second accumulation layer 112.Therefore, it is possible to reduce fair Perhaps the magnitude of current that the direction of magnetization of the first accumulation layer 111 reverses, while improving the first accumulation layer 111 and the second accumulation layer 112 Magnetic retention property.

It should be noted that according to the magnetic memory element of the present embodiment can be used equipment for manufacturing typical semiconductor and condition come Manufacture.For example, it is possible to use such as sputtering method, CVD (chemical vapor deposition) method, photoetching process, etching on the necessary basis The method of method or CMP (chemically mechanical polishing) method etc. manufactures the magnetic memory element according to the present embodiment.

(configuration of 2.2. second)

Then, the second configuration of the magnetic memory element according to the present embodiment is described referring to Fig. 3.Fig. 3 is matched according to second The schematic cross section for the magnetic memory element set.

As shown in figure 3, including spin(-)orbit layer 20 and setting in spin(-)orbit layer according to the magnetic memory element of the second configuration Tunnel junction element 11 on 20.In addition, tunnel junction element 11 includes the first nonmagnetic layer being arranged on spin(-)orbit layer 20 121, the first accumulation layer 111 for being arranged on the first nonmagnetic layer 121, second be arranged in the first accumulation layer 111 are non magnetic Layer 122, the second accumulation layer 112 being arranged on the second nonmagnetic layer 122, the insulator layer being arranged in the second accumulation layer 112 130, and the magnetization fixed layer 140 being arranged on insulator layer 130.

That is, according to second configuration tunnel junction element 11 with first configuration the difference is that: first store Nonmagnetic layer (i.e. the first nonmagnetic layer 121) is provided between layer 111 and spin(-)orbit layer 20.

It should be noted that spin(-)orbit layer 20, the first storage layer 111, the second storage layer 112, insulator layer 130, magnetization fixation Layer 140 with first configuration in it is substantially similar, therefore herein omit describe.

First nonmagnetic layer 121 includes that film thickness is 2nm or smaller non-magnetic material, and is arranged in spin(-)orbit layer 20 On.As described in for nonmagnetic layer 120, the first nonmagnetic layer 121 serves as the spin for being preferentially reflected towards spin or spinning downwards Reflecting layer, and further reflect the spinning polarized electron reflected by the second nonmagnetic layer 122 towards spin(-)orbit layer 20.Especially Ground, the first nonmagnetic layer 121 reflects spinning polarized electron, and thus makes it possible to spinning polarized electron is limited in the first storage In layer 111.Therefore, the first nonmagnetic layer 121 can be improved the efficiency that the direction of magnetization of the first accumulation layer 111 reverses.It should be noted that First nonmagnetic layer 121 can be formed for example by the material for being similar to nonmagnetic layer 120.It should be noted that the first nonmagnetic layer 121 Film thickness is greater than 2nm and undesirable, because the first nonmagnetic layer 121 is difficult to serve as spin reflecting layer.

Second nonmagnetic layer 122 includes that film thickness is 2nm or smaller non-magnetic material, and is clipped in the first accumulation layer 111 And second between accumulation layer 112, as described in for nonmagnetic layer 120.The film thickness for being formed by the second nonmagnetic layer 122 is 2nm or smaller makes it possible to spinning polarized electron to reflect spinning polarized electron to improve the first accumulation layer 111 The direction of magnetization reverse efficiency.In addition, the film thickness of the second nonmagnetic layer 122 is 2nm or smaller, make it possible to first 112 magnetic couplings of accumulation layer 111 and the second accumulation layer.Therefore, the second nonmagnetic layer 122, which can be reduced, allows the first accumulation layer The magnitude of current that 111 direction of magnetization reverses, while improving the magnetic retention property of the first accumulation layer 111 and the second accumulation layer 112. It should be noted that the second nonmagnetic layer 122 can be formed for example by the material for being similar to nonmagnetic layer 120.

According to the second configuration as described above, film thickness 2nm is set between spin(-)orbit layer 20 and the first accumulation layer 111 Or nonmagnetic layer (the first nonmagnetic layer 121) below, it makes it possible to for spinning polarized electron to be limited in the first accumulation layer 111 In.Therefore, the first accumulation layer 111 will further be improved by spinning polarized electron according to the tunnel junction element 11 of the second configuration The direction of magnetization reverse efficiency.

(configuration of 2.3. third)

It is configured next, being described referring to Fig. 4 according to the third of the magnetic memory element of the present embodiment.Fig. 4 is according to third The schematic cross section of the magnetic memory element of configuration.

As shown in figure 4, including spin(-)orbit layer 20 and setting in spin(-)orbit layer according to the magnetic memory element that third configures Tunnel junction element 12 on 20.In addition, tunnel junction element 12 include be arranged on spin(-)orbit layer 20 vertical auxiliary layer 150, The first accumulation layer 111 for being arranged on vertical auxiliary layer 150, the nonmagnetic layer 120 being arranged in the first accumulation layer 111, setting The second accumulation layer 112 on nonmagnetic layer 120, the insulator layer 130 being arranged in the second accumulation layer 112, and be arranged exhausted Magnetization fixed layer 140 on edge body layer 130.

That is, according to third configuration tunnel junction element 12 with first configuration the difference is that: first store Vertical auxiliary layer 150 is provided between layer 111 and spin(-)orbit layer 20.

It should be noted that spin(-)orbit layer 20, the first storage layer 111, nonmagnetic layer 120, the second storage layer 112, insulator layer 130, magnetization fixed layer 140 with first configuration in it is substantially similar, therefore herein omit description.

Vertical auxiliary layer 150 is arranged on spin(-)orbit layer 20, and serves as the lining of the first accumulation layer 111, to control Perpendicular to the direction of magnetization of first accumulation layer 111 in film surface direction.Particularly, vertical auxiliary layer 150 include increase perpendicular to The non-magnetic material of magnetic anisotropy on the film surface direction of first accumulation layer 111.For example, vertical auxiliary layer 150 may pass through Crystal orientation or the magnetic anisotropy of the first accumulation layer 111 are controlled to control the first accumulation layer 111 perpendicular to film surface direction The direction of magnetization, or the magnetic of the first accumulation layer 111 perpendicular to film surface direction may be controlled by Interface Anisotropy Change direction.For example, vertical auxiliary layer 150 may include such as MgO or AlO_xOxide, wherein 3d transition metal element added It is added to the NaCl crystal structure compound of MgO, or in which Ca or S are added to the NaCl crystal structure compound of Mg.

It is configured according to third as described above, is further arranged between spin(-)orbit layer 20 and the first accumulation layer 111 and hangs down Straight auxiliary layer 150, makes it possible to increase the perpendicular magnetic anisotropy of the direction of magnetization of the first accumulation layer 111.Therefore, according to third The tunnel junction element 12 of configuration can further increase the magnetization retention property of the first accumulation layer 111 and the second accumulation layer 112.

(configuration of 2.4. the 4th)

Then, the 4th configuration of the magnetic memory element according to the present embodiment is described referring to Fig. 5.Fig. 5 is matched according to the 4th The schematic cross section for the magnetic memory element set.

As shown in figure 5, including spin(-)orbit layer 20 and setting in spin(-)orbit layer according to the magnetic memory element of the 4th configuration Tunnel junction element 13 on 20.In addition, tunnel junction element 13 include be arranged on spin(-)orbit layer 20 vertical auxiliary layer 150, The nonmagnetic layer 120 that is arranged on vertical auxiliary layer 150, the accumulation layer 110 being arranged on nonmagnetic layer 120, setting are storing Insulator layer 130 on layer 110, and the magnetization fixed layer 140 being arranged on insulator layer 130.

That is, according to the 4th configuration tunnel junction element 13 and third configure the difference is that: first storage Layer 111 is removed.

It should be noted that spin(-)orbit layer 20, vertical auxiliary layer 150, insulator layer 130, magnetization fixed layer 140 and third configure In it is substantially similar, therefore herein omit description.

Nonmagnetic layer 120 includes that film thickness is 2nm or smaller non-magnetic material, and is arranged on vertical auxiliary layer 150. Nonmagnetic layer 120, which serves as, is preferentially reflected towards spin or the spin reflecting layer spinned downwards, thus by spinning polarized electron come Improve the efficiency that the direction of magnetization of accumulation layer 111 reverses.Nonmagnetic layer 120 can be for example non-magnetic in the first configuration by being similar to The material of property layer 120 is formed.

It should be noted that vertical auxiliary layer 150 includes the film equal to or less than 2nm, make it possible to via nonmagnetic layer 120 Come control accumulation layer 110 the direction of magnetization perpendicular magnetic anisotropy.The film thickness of nonmagnetic layer 120 is greater than 2nm and undesirable, because The magnetic anisotropy on the film surface direction perpendicular to accumulation layer 110 is not can control for vertical auxiliary layer 150.

Accumulation layer 110 includes ferrimagnet, and is arranged on nonmagnetic layer 120.The direction of magnetization of accumulation layer 110 is not It is fixed, but it is reversible switch to it is parallel or antiparallel with the direction of magnetization of magnetization fixed layer 140.Here, in accumulation layer 110, Vertical auxiliary layer 150 is increased perpendicular to the magnetic anisotropy on film surface direction, and nonmagnetic layer 120 also improves magnetization side To Reversal effect, and thus makes it possible to reducing write current improves magnetization retention property simultaneously.It should be noted that accumulation layer 110 It can be formed by being similar to the material of the first accumulation layer 111 and the second accumulation layer 112 in the first configuration.

According to it is as described above 4th configuration, between spin(-)orbit layer 20 and insulator layer 130 be arranged film thickness 2nm or Nonmagnetic layer 120 below makes it possible to improve the efficiency that the direction of magnetization of accumulation layer 110 reverses.In addition, matching according to the 4th It sets, vertical auxiliary layer 150 is set between spin(-)orbit layer 20 and nonmagnetic layer 120, make it possible to increase perpendicular to storage Magnetic anisotropy on the film surface direction of layer 110.Therefore, it can be further increased according to the tunnel junction element 13 of the 4th configuration The magnetization retention property of accumulation layer 110.

<configurations of 3. electronic equipments>

In addition, describing the electronic equipment for using the magnetic memory element according to the present embodiment referring to figure 6 and figure 7.According to this Multiple magnetic memory elements of embodiment may be arranged in an array, and to configure magnetic memory apparatus, and electronic equipment may include magnetic Storage device is as any one of the storage of such as large capacity file memory, code and working storage.

(exemplary appearance of 3.1. electronic equipment)

Firstly, describing referring to Fig. 6 using according to the magnetic memory element of the present embodiment or the electronic equipment of magnetic memory apparatus 200 appearance.Fig. 6 is the perspective view of the exemplary appearance of electronic equipment 200.

As shown in fig. 6, in the appearance of electronic equipment 200, it is each to configure the inner or outer side for being all disposed within shell 201, The shell 201 is for example with laterally long flat pattern.For example, electronic equipment 200 may be used as game device.

Before shell 201, the centre of longitudinal direction is provided with display panel 202.In addition, circumferentially spaced The left and right sides of display panel 202 is arranged in the operation key 203 and operation key 204 opened.In addition, operation key 205 is arranged in shell The lower end of 201 fronts.Operation key 203,204,205 serves as directionkeys or enter key, shows on display panel 202 for selecting Menu item, into game etc..

In addition, the power supply for being provided with the connection terminal 206 of connection external device (ED) on the top surface of shell 201, supplying electric power Terminal 207, light-receiving window 208 that infrared communication is carried out with external device (ED) etc..

(example arrangement of 3.2. electronic equipment)

Next, describing the inside configuration of electronic equipment 200 referring to Fig. 7.Fig. 7 is the inside for showing electronic equipment 200 The block diagram of configuration.

As shown in fig. 7, electronic equipment 200 includes: the arithmetic processor 210 including CPU (central processing unit)；Wherein deposit Contain the memory 220 of various information segments；And the controller 230 of each configuration of controlling electronic devices 200.Arithmetic processing Device 210 and controller 230 are by the supply electric power such as example not shown battery.

Arithmetic processor 210 generates menu screen, to allow the various information segments of user setting or selection application program.This Outside, arithmetic processor 210 executes the application program of user's selection.

The various information segments of the reservation user setting of memory 220.Memory 220 includes the magnetic storage according to the present embodiment Element or magnetic memory apparatus.

Controller 230 includes input sink 231, communication processor 233 and power-supply controller of electric 235.Input sink 231 Detect the state of such as operation key 203,204 and 205.In addition, communication processor 233 executes the communication process with external device (ED). In addition, power-supply controller of electric 235 controls the electric power for being supplied to each part of electronic equipment 200.

Allow memory 220 with the operation of lower power consumption according to the magnetic memory element of the present embodiment.Therefore, using according to this The magnetic memory element of embodiment or the electronic equipment 200 of magnetic memory apparatus make it possible to the operation of lower power consumption.

Although preferred embodiment of the present disclosure is described in detail with reference to attached drawing above, scope of the presently disclosed technology is unlimited In these examples.Obviously, disclosure skilled person will be made in the technological concept described in the dependent claims Various variations or modifications out, and should be understood that these modification natures and belong to scope of the presently disclosed technology.

In addition, effect as described herein is only explanation or illustrative, it is not intended to be restrictive.That is, making For that may have technical staff can be from the description of this specification according to the technology of the disclosure to the substituted or supplemented of said effect Other obvious effects.It should be noted that the configuration described below also falls into scope of the presently disclosed technology.

(1)

A kind of magnetic memory element, comprising:

Spin(-)orbit layer, extends in one direction；

Write line is electrically coupled to the spin(-)orbit layer, and allows electric current along the extending direction of the spin(-)orbit layer Flowing；

Tunnel junction element comprising accumulation layer, insulator layer and the magnetization being sequentially stacked on the spin(-)orbit layer Fixing layer；And

Nonmagnetic layer, film thickness is 2nm or smaller, and is arranged between the spin(-)orbit layer and the insulator layer Any stacked position.

(2)

Magnetic memory element as described in (1), wherein

The accumulation layer includes the first accumulation layer and the second accumulation layer, and

The nonmagnetic layer is clipped between first accumulation layer and second accumulation layer.

(3)

Magnetic memory element as described in (2), wherein first accumulation layer and second accumulation layer pass through it is described non-magnetic Property layer magnetic couplings each other.

(4)

Magnetic memory element as described in (2) or (3), wherein the nonmagnetic layer is further disposed upon second accumulation layer Lower section.

(5)

Magnetic memory element as described in any one of (2) to (4) further comprises vertical auxiliary layer, is arranged described Between spin(-)orbit layer and second accumulation layer and including the compound with NaCl base crystal structure.

(6)

Magnetic memory element as described in (1), wherein vertical auxiliary layer, the nonmagnetic layer and the accumulation layer heap in order It is stacked on the spin(-)orbit layer, and the vertical auxiliary layer includes the compound with NaCl base crystal structure.

(7)

Magnetic memory element as described in any one of (1) to (6), wherein the accumulation layer includes magnetic material, the magnetic Property material there is the composition of multiple element combination, and the multiple element is selected from the group that is made up of: Co, Fe, B, Al, Si, Mn, Ga, Ge, Ni, Cr and V.

(8)

Magnetic memory element as described in any one of (1) to (7), wherein the nonmagnetic layer includes monofilm or lamination Film, the film include selected from one or more non-magnetic materials of group being made up of: Ru, Mo, Nb, HfB, Ta, W, Cr, MgO, AlOx, MgS and MgCaS₂。

(9)

A kind of electronic equipment, comprising:

Memory uses magnetic memory element；And

Arithmetic processor handles information based on the information of storage in the memory,

The magnetic memory element, including

Spin(-)orbit layer, extends in one direction,

Write line is electrically coupled to the spin(-)orbit layer, and allows electric current along the extending direction of the spin(-)orbit layer Flowing,

Tunnel junction element comprising accumulation layer, insulator layer and the magnetization being sequentially stacked on the spin(-)orbit layer Fixing layer, and

Nonmagnetic layer, film thickness is 2nm or smaller, and is arranged between the spin(-)orbit layer and the insulator layer Any stacked position.

The description of reference number

10,11,12,13 tunnel junction element

20 spin(-)orbit layers

21,41 electrode

30 write lines

40 read lines

110 accumulation layers

111 first accumulation layers

112 second accumulation layers

120 nonmagnetic layers

121 first nonmagnetic layers

122 second nonmagnetic layers

130 insulator layers

140 magnetization fixed layers

150 vertical auxiliary layers.