阅读说明：本技术 一种拉晶装置、设备及方法 (A kind of crystal pulling apparatus, device and method ) 是由 兰洵 全铉国 于 2019-09-12 设计创作，主要内容包括：本发明实施例提供了一种拉晶装置、设备及方法,拉晶装置包括：坩埚,包括一用于容纳硅熔液的容纳空间；磁场发射部,用于向坩埚处输出磁场；温度测量部,用于测量一个或多个指定位置的硅熔液的温度值；控制部,控制部分别与磁场发射部和温度测量部连接,控制部用于接收温度测量部发送的一个或多个指定位置的硅熔液的温度值,根据一个或多个指定位置的硅熔液的温度值,确定磁场发射部输出磁场的目标磁场强度,并控制磁场发射部输出强度为目标磁场强度的磁场。这样可以对磁场进行自动化调控,能将硅熔液的对流强度控制在一定范围内,进而优化硅熔液对流变化所导致的硅熔液内部的热传导,为硅晶体生长提供更加稳定的工艺条件。(The embodiment of the invention provides a kind of crystal pulling apparatus, device and method, crystal pulling apparatus includes: crucible, including one for accommodating the accommodation space of melted silicon；Emission of magnetic field portion is used to export magnetic field at crucible；Temperature measuring section, the temperature value of the melted silicon for measuring one or more designated positions；Control unit, control unit is connect with emission of magnetic field portion and Temperature measuring section respectively, control unit is used to receive the temperature value of the melted silicon of one or more designated positions of Temperature measuring section transmission, according to the temperature value of the melted silicon of one or more designated positions, it determines the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field, and controls the magnetic field that emission of magnetic field portion output intensity is magnetic field of the goal intensity.Automatic regulation can be carried out to magnetic field in this way, the convection intensity of melted silicon can be controlled in a certain range, and then optimize the heat transfer inside melted silicon caused by melted silicon convection current variation, more stable process conditions are provided for crystal growth.)

1. a kind of crystal pulling apparatus characterized by comprising

Crucible, including one for accommodating the accommodation space of melted silicon；

Emission of magnetic field portion is used to export magnetic field at the crucible；

Temperature measuring section, the temperature value of the melted silicon for measuring one or more designated positions；

Control unit, the control unit are connect with the emission of magnetic field portion and the Temperature measuring section respectively, and the control unit is used for The temperature value for receiving the melted silicon for one or more designated positions that the Temperature measuring section is sent, it is specified according to one or more The temperature value of the melted silicon of position, determines the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field, and controls the magnetic field Emission part output intensity is the magnetic field of magnetic field of the goal intensity.

2. crystal pulling apparatus according to claim 1, which is characterized in that the control unit is specifically used for according to one or more The temperature value of the melted silicon of designated position determines the maximum temperature difference of the melted silicon, and according to the maximum temperature of the melted silicon Degree difference determines the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field.

3. crystal pulling apparatus according to claim 1, which is characterized in that the Temperature measuring section includes at least: infrared temperature Meter, the infrared thermometer are connect with the control unit, and the measurement end of the infrared thermometer is directed toward close to the accommodation space Side wall side melted silicon, the infrared thermometer is used to obtain the maximum temperature values of the melted silicon, and the silicon is melted The maximum temperature values of liquid are sent to the control unit.

4. crystal pulling apparatus according to claim 2, which is characterized in that the control unit for determining institute according to the following formula State the magnetic field of the goal intensity B in emission of magnetic field portion output magnetic field

Wherein, α is the thermal expansion coefficient of melted silicon, and d is the diameter of crucible, and Δ T is the maximum temperature difference of melted silicon, and A is default Proportionality coefficient, g is acceleration of gravity, v_kIt is coefficient of dynamic viscosity, σ is electrical conductivity, and B is magnetic field of the goal intensity, and ρ is that silicon is molten The density of liquid.

5. crystal pulling apparatus according to claim 1, which is characterized in that the crystal pulling apparatus further include:

Heat shielding, the heat shielding are located at the top of the crucible；

Crystal bar lifting parts, the crystal bar lifting parts are located at the top of the crucible.

6. a kind of silicon single crystal manufacturing apparatus, which is characterized in that including crystal pulling apparatus such as described in any one of claim 1 to 5.

7. a kind of control method, which is characterized in that be applied to such as crystal pulling apparatus described in any one of claim 1 to 5；

The control method includes:

The control unit receives the temperature value that the Temperature measuring section sends the melted silicon of one or more designated positions, according to one The temperature value of the melted silicon of a or multiple designated positions determines the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field, and Control the magnetic field that emission of magnetic field portion output intensity is magnetic field of the goal intensity.

8. control method according to claim 7, which is characterized in that the silicon according to one or more designated positions is molten The temperature value of liquid determines the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field, comprising:

The control unit determines the maximum temperature of the melted silicon according to the temperature value of the melted silicon of one or more designated positions Difference；

According to the maximum temperature difference of the melted silicon, the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field is determined.

9. control method according to claim 8, which is characterized in that the maximum temperature difference according to the melted silicon is true The magnetic field of the goal intensity in fixed emission of magnetic field portion output magnetic field, comprising:

The magnetic field of the goal intensity B in emission of magnetic field portion output magnetic field is determined according to the following formula

Wherein, α is the thermal expansion coefficient of melted silicon, and d is the diameter of crucible, and Δ T is the maximum temperature difference of melted silicon, and A is default Proportionality coefficient, g is acceleration of gravity, v_kIt is coefficient of dynamic viscosity, σ is electrical conductivity, and B is magnetic field of the goal intensity, and ρ is that silicon is molten The density of liquid.

10. control method according to claim 7, which is characterized in that the method also includes:

The Temperature measuring section measures the temperature value of the melted silicon, and the temperature value for measuring the resulting melted silicon is sent To the control unit.

Technical field

The present invention relates to silicon wafers to fabricate field, in particular to a kind of crystal pulling apparatus, device and method.

Background technique

In the growth course of large size single crystal silicon, silicon during monocrystalline silicon growing can be inhibited molten by introducing magnetic field The convection current of liquid, and then reduce the influence to crystal growth solid liquid interface, the final stability for guaranteeing crystal growth.

During crystal growth, the temperature in crucible can gradually generate variation, pair of melted silicon (or being melt) Stream can also be changed stepwise, therefore the demand to magnetic field strength can also change therewith.The variation of melted silicon convection current will lead to melted silicon The variation of internal heat transfer, constant magnetic field cannot reduce influence of the melted silicon convection current variation to crystal growth.And it is existing Crystal pulling apparatus can only be kept fixed magnetic field, can not the convection current to melted silicon accurately managed, and then just not can guarantee silicon yet The stability of crystal growth.

Summary of the invention

The embodiment of the invention provides a kind of crystal pulling apparatus, device and method, can only be protected with solving existing crystal pulling apparatus Hold the problem of fixed magnetic field can not accurately manage the convection current of melted silicon.

In a first aspect, in order to solve the above-mentioned technical problem, the embodiment of the invention provides a kind of crystal pulling apparatus, comprising:

Crucible, including one for accommodating the accommodation space of melted silicon；

Emission of magnetic field portion is used to export magnetic field at the crucible；

Temperature measuring section, the temperature value of the melted silicon for measuring one or more designated positions；

Control unit, the control unit are connect with the emission of magnetic field portion and the Temperature measuring section respectively, the control unit For receiving the temperature value of the melted silicon for one or more designated positions that the Temperature measuring section is sent, according to one or more The temperature value of the melted silicon of designated position determines the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field, and described in control Emission of magnetic field portion output intensity is the magnetic field of magnetic field of the goal intensity.

Optionally, the control unit is specifically used for the temperature value of the melted silicon according to one or more designated positions, determines The maximum temperature difference of the melted silicon, and determine that the emission of magnetic field portion exports magnetic field according to the maximum temperature difference of the melted silicon Magnetic field of the goal intensity.

Optionally, the Temperature measuring section includes at least: infrared thermometer, and the infrared thermometer and the control unit connect It connects, the measurement end of the infrared thermometer is directed toward the melted silicon close to the side wall side of the accommodation space, the infrared temperature The maximum temperature values for obtaining the melted silicon are counted, and the maximum temperature values of the melted silicon are sent to the control unit.

Optionally, the control unit is used to determine the magnetic field of the goal in emission of magnetic field portion output magnetic field according to the following formula Intensity B

Wherein, α is the thermal expansion coefficient of melted silicon, and d is the diameter of crucible, and Δ T is the maximum temperature difference of melted silicon, and A is Preset proportionality coefficient, g are acceleration of gravity, v_kIt is coefficient of dynamic viscosity, σ is electrical conductivity, and B is magnetic field of the goal intensity, and ρ is The density of melted silicon.

Optionally, the crystal pulling apparatus further include:

Heat shielding, the heat shielding are located at the top of the crucible；

Crystal bar lifting parts, the crystal bar lifting parts are located at the top of the crucible.

Second aspect, the embodiment of the invention also provides a kind of silicon single crystal manufacturing apparatus, including crystal pulling as described above to fill It sets.

The third aspect, the embodiment of the invention also provides a kind of control methods, are applied to crystal pulling apparatus as described above；

The control method includes:

The control unit receives the temperature value that the Temperature measuring section sends the melted silicon of one or more designated positions, root According to the temperature value of the melted silicon of one or more designated positions, determine that the magnetic field of the goal in emission of magnetic field portion output magnetic field is strong Degree, and control the magnetic field that emission of magnetic field portion output intensity is magnetic field of the goal intensity.

Optionally, the temperature value of the melted silicon according to one or more designated positions determines the emission of magnetic field portion Export the magnetic field of the goal intensity in magnetic field, comprising:

The control unit determines the maximum of the melted silicon according to the temperature value of the melted silicon of one or more designated positions Temperature difference；

According to the maximum temperature difference of the melted silicon, the magnetic field of the goal intensity in emission of magnetic field portion output magnetic field is determined.

Optionally, the method also includes:

The Temperature measuring section measures the temperature value of the melted silicon, and the temperature value that will measure the resulting melted silicon It is sent to the control unit.

Optionally, the maximum temperature difference according to the melted silicon determines the target in emission of magnetic field portion output magnetic field Magnetic field strength, comprising:

The magnetic field of the goal intensity B in emission of magnetic field portion output magnetic field is determined according to the following formula

Wherein, α is the thermal expansion coefficient of melted silicon, and d is the internal diameter of crucible, and Δ T is the maximum temperature difference of melted silicon, and A is Preset proportionality coefficient, g are acceleration of gravity, v_kIt is coefficient of dynamic viscosity, σ is electrical conductivity, and B is magnetic field of the goal intensity, and ρ is The density of melted silicon.

Optionally, the method also includes:

The Temperature measuring section measures the temperature value of the melted silicon, and the temperature value that will measure the resulting melted silicon It is sent to the control unit.

The embodiment of the present invention has the following beneficial effects:

In embodiments of the present invention, by Temperature measuring section to the silicon of one or more designated positions of the accommodation space The temperature value of melt is monitored, and the Temperature measuring section will test the temperature value of the melted silicon of one or more designated positions It is sent to the control unit, the control unit determines that the magnetic field of the goal in the emission of magnetic field portion is strong according to the temperature value got Degree, and the output field strength for controlling the emission of magnetic field portion is magnetic field of the goal intensity, and then realizes the output magnetic to emission of magnetic field portion The magnetic field strength of field carries out real-time monitoring.In this way, the crystal pulling apparatus of the embodiment of the present invention can carry out automatic regulation to magnetic field, The convection current of melted silicon is controlled, the convection intensity of melted silicon can be controlled in a certain range, and then it is molten to optimize silicon Heat transfer inside melted silicon caused by the convection current variation of liquid, provides more stable process conditions for the growth of silicon crystal.

Detailed description of the invention

Fig. 1 is one of the structural schematic diagram of crystal pulling apparatus of the embodiment of the present invention；

Fig. 2 is the second structural representation of the crystal pulling apparatus of the embodiment of the present invention；

Fig. 3 is one of the flow diagram of control method of the embodiment of the present invention；

Fig. 4 is the two of the flow diagram of the control method of the embodiment of the present invention.

Specific embodiment

To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool Body embodiment is described in detail.