阅读说明：本技术 一种具有隔离保护环的无背电极光电探测器阵列结构及其制备方法 (It is a kind of with insulation blocking ring without back electrode photodetector array structure and preparation method thereof ) 是由 董自勇 盛振 汪斌 李文刚 于 2019-08-29 设计创作，主要内容包括：本发明公开了一种具有隔离保护环的无背电极光电探测器阵列结构及其制备方法,包括半导体硅衬底、P+型隔离槽和N+掺杂区；所述P+型隔离槽设置在半导体硅衬底的正面；所述N+掺杂区设置在半导体硅衬底的正面和背面；所述半导体硅衬底正面的P+型隔离槽和N+掺杂区交错间隔设置；所述P+型隔离槽上端设有电极阳极；所述半导体硅衬底正面的N+掺杂区上设有电极阴极；所述电极阴极处采用N+/P+/N+隔离保护环结构；所述N+/P+/N+隔离保护环通过将P+型隔离槽增加设置在N+掺杂区中间组合而成；所述半导体硅衬底正面和背面还设有增透膜；所述电极阴极和电极阳极均设置在同一侧；本发明符合探测器器件轻薄化发展要求,降低生产成本,有利于载流子收集和减小串扰。(The invention discloses a kind of with insulation blocking ring without back electrode photodetector array structure and preparation method thereof, including bulk silicon substrate, P+ type isolation channel and N+ doped region；The front of bulk silicon substrate is arranged in the P+ type isolation channel；The front and back of bulk silicon substrate is arranged in the N+ doped region；The positive P+ type isolation channel of the bulk silicon substrate and N+ doped region are staggeredly spaced setting；P+ type isolation channel upper end is equipped with electrode anode；The positive N+ doped region of bulk silicon substrate is equipped with electrode cathode；N+/P+/N+ insulation blocking ring structure is used at the electrode cathode；The N+/P+/N+ insulation blocking ring is formed by increasing to be arranged P+ type isolation channel in N+ doped region intermediate combination；The bulk silicon substrate front and back is additionally provided with anti-reflection film；The electrode cathode and electrode anode are arranged at the same side；The present invention meets the lightening demand for development of detector device, reduces production cost, is conducive to carrier collection and reduces crosstalk.)

1. it is a kind of with insulation blocking ring without back electrode photodetector array structure, it is characterised in that: including semiconductor silicon Substrate, P+ type isolation channel and N+ doped region；The front of bulk silicon substrate is arranged in the P+ type isolation channel；The N+ doped region The front and back of bulk silicon substrate is set；The positive P+ type isolation channel of the bulk silicon substrate and N+ doped region interlock Interval setting；P+ type isolation channel upper end is equipped with electrode anode；The positive N+ doped region of bulk silicon substrate is equipped with Electrode cathode；N+/P+/N+ insulation blocking ring structure is used at the electrode cathode；The N+/P+/N+ insulation blocking ring passes through P+ type isolation channel is increased to be arranged and is formed in N+ doped region intermediate combination；The bulk silicon substrate front and back is additionally provided with increasing Permeable membrane；The electrode cathode and electrode anode are arranged at the same side.

2. it is as described in claim 1 it is a kind of with insulation blocking ring without back electrode photodetector array structure, feature Be: the anti-reflection film uses SiN or SiO₂Film or SiN/SiO₂Double-layer film structure.

3. it is as claimed in claim 1 or 2 it is a kind of with insulation blocking ring without back electrode photodetector array structure, it is special Sign is: the anti-reflection film with a thickness of 50-100nm.

4. it is as described in claim 1 it is a kind of with insulation blocking ring without back electrode photodetector array structure, feature Be: the bulk silicon substrate is divided into N-type silicon substrate and P-type silicon substrate.

5. a kind of preparation side without back electrode photodetector array structure with insulation blocking ring as described in claim 1 Method, it is characterised in that: firstly, selecting suitable bulk silicon substrate, partly led using diffusion technique or ion implantation technique Body silicon substrate front is adulterated to form P+ type isolation channel and N+ doped region, and the back side is adulterated to form N+ doped region；Then, in semiconductor silicon Substrate face uses SiN or SiO₂Film or SiN/SiO₂Double-layer film structure forms anti-reflection film, and the back side uses SiN or SiO₂ Film or SiN/SiO₂Double-layer film structure passivation, thickness control is in 50-100nm；Next, in bulk silicon substrate front N+ doped region in increase P+ type isolation channel, form it into N+/P+/N+ insulation blocking ring structure；Then in bulk silicon substrate Positive the same side installation electrode cathode and electrode anode, complete the processing of total.

6. a kind of preparation side without back electrode photodetector array structure with insulation blocking ring as claimed in claim 5 Method, it is characterised in that: N+ doped region and P+ type isolation channel in the N+/P+/N+ insulation blocking ring structure are equipotential.

Technical field

The present invention relates to a kind of with insulation blocking ring without back electrode photodetector array structure, belongs to semiconductor light Electric explorer technical field.

Background technique

Semiconductor photo detector array generates luminous ray by direct incident ray or X-ray in scintillator, Generate nonequilibrium carrier in the semiconductors to detect incident light, the key parameter for measuring photodetector array performance includes point Charge crosstalk etc. between resolution, dark current, signal-to-noise ratio, reading speed and pixel.

The photodetector of mainstream uses the PIN structural with back electrode at present, and detector anode and cathode is located at The front and back of detector does not utilize device to be thinned and reduce cost；In addition, leading to reduce the crosstalk of detector array Frequently with technologies such as PN junction isolation, deep trench isolations, ineffective or technology difficulty is big.

Summary of the invention

For the above technical problems, the purpose of the present invention is: propose it is a kind of with insulation blocking ring without back Electrode photoelectric detector array architecture and preparation method thereof, can reduce dark current, is conducive to carrier collection and reduces crosstalk, Reduce production cost.

The technical solution of the invention is as follows is achieved: it is a kind of with insulation blocking ring without back electrode photodetection Device array structure, including bulk silicon substrate, P+ type isolation channel and N+ doped region；The P+ type isolation channel is arranged in semiconductor silicon The front of substrate；The front and back of bulk silicon substrate is arranged in the N+ doped region；The positive P of bulk silicon substrate + type isolation channel and N+ doped region are staggeredly spaced setting；P+ type isolation channel upper end is equipped with electrode anode；The semiconductor silicon lining The positive N+ doped region in bottom is equipped with electrode cathode；N+/P+/N+ insulation blocking ring structure is used at the electrode cathode；The N +/P+/N+ insulation blocking ring is formed by increasing to be arranged P+ type isolation channel in N+ doped region intermediate combination；The semiconductor silicon Substrate face and the back side are additionally provided with anti-reflection film；The electrode cathode and electrode anode are arranged at the same side.

Preferably, the anti-reflection film uses SiN or SiO₂Film or SiN/SiO₂Double-layer film structure.

Preferably, the anti-reflection film with a thickness of 50-100nm.

Preferably, the bulk silicon substrate is divided into N-type silicon substrate and P-type silicon substrate.

A kind of preparation method without back electrode photodetector array structure with insulation blocking ring is closed firstly, selecting Suitable bulk silicon substrate, using diffusion technique or ion implantation technique bulk silicon substrate front adulterate to be formed P+ type every From slot and N+ doped region, the back side is adulterated to form N+ doped region；Then, SiN or SiO is used in bulk silicon substrate front₂Film Or SiN/SiO₂Double-layer film structure forms anti-reflection film, and the back side uses SiN or SiO₂Film or SiN/SiO₂Double-layer film structure Passivation, thickness control is in 50-100nm；Next, increase P+ type isolation channel in the positive N+ doped region of bulk silicon substrate, Form it into N+/P+/N+ insulation blocking ring structure；Then in the positive the same side installation electrode cathode of bulk silicon substrate and electricity Pole anode completes the processing of total.

Preferably, the N+ doped region in the N+/P+/N+ insulation blocking ring structure and P+ type isolation channel are equipotential.

Due to the application of the above technical scheme, compared with the prior art, the invention has the following advantages:

It is of the invention it is a kind of with insulation blocking ring without back electrode photodetector array structure and preparation method thereof, lead to It crosses electrode setting in the same side, meets the lightening demand for development of detector device, reduce production cost, adopted at electrode cathode With N+/P+/N+ insulation blocking ring structure, it is arranged among N+ doped region by increasing P+ type isolation channel, can directly collects expansion The photohole being scattered in N+ doped region reduces crosstalk, while on the one hand the presence of N+ doped region plays the role of cathode, another Aspect can avoid the reduction using P+/N+/P+ insulation blocking ring structure bring optical responsivity, is conducive to carrier collection and subtracts Small crosstalk.

Detailed description of the invention

Technical scheme of the present invention is further explained with reference to the accompanying drawing:

Attached drawing 1 is a kind of section knot without back electrode photodetector array structure with insulation blocking ring of the invention Structure schematic diagram；

Wherein: 1, bulk silicon substrate；2, P+ type isolation channel；3, N+ doped region；4, electrode cathode；5, electrode anode；6, Anti-reflection film；7, N+/P+/N+ insulation blocking ring.

Specific embodiment

The present invention will now be explained with reference to the accompanying drawings.

As shown in Fig. 1 for it is of the present invention it is a kind of with insulation blocking ring without back electrode photodetector array knot Structure, including bulk silicon substrate 1, P+ type isolation channel 2 and N+ doped region 3；The P+ type isolation channel 2 is arranged in bulk silicon substrate 1 front；The front and back of bulk silicon substrate 1 is arranged in the N+ doped region 3；The positive P of the bulk silicon substrate 1 + type isolation channel 2 and N+ doped region 3 are staggeredly spaced setting；2 upper end of P+ type isolation channel is equipped with electrode anode 5；The semiconductor The positive N+ doped region 3 of silicon substrate 1 is equipped with electrode cathode 4；N+/P+/N+ insulation blocking ring 7 is used at the electrode cathode 4 Structure；The N+/P+/N+ insulation blocking ring 7 is formed by increasing to be arranged P+ type isolation channel 2 in 3 intermediate combination of N+ doped region； 1 front and back of bulk silicon substrate is additionally provided with anti-reflection film 6；The electrode cathode 4 and electrode anode 5 are arranged at same Side.

In order to reduce surface recombination, reduce dark current, the anti-reflection film 6 uses SiN or SiO₂Film or SiN/SiO₂It is double-deck Membrane structure；The anti-reflection film 6 with a thickness of 50-100nm.

The bulk silicon substrate 1 divides for N-type silicon substrate and P-type silicon substrate, according to N-type silicon substrate and The difference of P-type silicon substrate can be such that P+ type isolation channel 2 and N+ doped region 3 exchanges accordingly and meet the requirements.

A kind of preparation method without back electrode photodetector array structure with insulation blocking ring is closed firstly, selecting Suitable bulk silicon substrate 1 forms P+ type in 1 front doping of bulk silicon substrate using diffusion technique or ion implantation technique Isolation channel 2 and N+ doped region 3, the back side are adulterated to form N+ doped region 3；Then, in the front of bulk silicon substrate 1 using SiN or SiO₂Film or SiN/SiO₂Double-layer film structure forms anti-reflection film 6, and the back side uses SiN or SiO₂Film or SiN/SiO₂It is double Layer film structure passivation, thickness control is in 50-100nm；Next, increasing in the positive N+ doped region 3 of bulk silicon substrate 1 Add P+ type isolation channel 2, forms it into 7 structure of N+/P+/N+ insulation blocking ring；Then in the positive the same side of bulk silicon substrate 1 Electrode cathode 4 and electrode anode 5 are installed, the processing of total is completed.

N+ doped region 3 and P+ type isolation channel 2 in 7 structure of N+/P+/N+ insulation blocking ring are equipotential, facilitate company It is connected to the cathode of device.

4 position of electrode cathode uses 7 structure of N+/P+/N+ insulation blocking ring, for reducing crosstalk.Only depend on N+ and N- Silicon direct " N+/N- high low field " prevents string of the photohole of N-type substrate portions between different pixels It disturbs, sufficiently wide (needing to be greater than few son-photohole diffusion length) is wanted in the region of N+ doped region 3；Increase in N+ doped region 3 P+ type isolation channel 2, can directly collect the photohole being diffused into N+ doped region 3, reduce crosstalk；While N+ doped region 3 In the presence of cathode is on the one hand played the role of, on the other hand can avoid using the bring photoresponse of P+/N+/P+ insulation blocking ring structure The reduction of degree.

It is of the invention it is a kind of with insulation blocking ring without back electrode photodetector array structure and preparation method thereof, lead to It crosses electrode setting in the same side, meets the lightening demand for development of detector device, production cost is reduced, at electrode cathode 4 Using 7 structure of N+/P+/N+ insulation blocking ring, it is arranged among N+ doped region 3 by increasing P+ type isolation channel 2, can be directly received Collect the photohole being diffused into N+ doped region 3, reduces crosstalk, while on the one hand the work of cathode is played in the presence of N+ doped region 3 With on the other hand the avoidable reduction using P+/N+/P+ insulation blocking ring structure bring optical responsivity, is conducive to carrier Collect and reduce crosstalk.

It is of the invention it is a kind of with insulation blocking ring without back electrode photodetector array structure and preparation method thereof, lead to It crosses electrode setting in the same side, meets the lightening demand for development of detector device, production cost is reduced, by bulk silicon substrate The N+ doped region 3 in 1 front and the back side uses TSV technology, realizes the connection of front and back sides N+ doped region 3, is conducive to carrier collection With reduction crosstalk.

The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art Scholar can understand the contents of the present invention and be implemented, and it is not intended to limit the scope of the present invention, it is all according to the present invention Equivalent change or modification made by Spirit Essence, should be covered by the scope of protection of the present invention.