阅读说明：本技术 化学气相生长装置和覆膜形成方法 (Chemical vapor-phase growing apparatus and film formation method ) 是由 森力 山村和市 于 2019-05-21 设计创作，主要内容包括：本发明是在保持于反应容器内的基材(6)的表面上成膜的化学气相生长装置,在反应容器内,具有能够保持基材(6)的第1保持部件(4)、和能够与第1保持部件(4)独立地保持基材(6)的第2保持部件(5),第1保持部件(4)和第2保持部件(5)之中的至少一者的保持部件能够沿着上下方向移动。此外,本发明的覆膜形成方法包括：第一步骤,通过第1保持部件(4)而保持基材(6),在基材表面上通过化学气相生长而形成覆膜；第二步骤,通过使第1保持部件(4)和第2保持部件(5)之中的至少一者的保持部件沿着上方向和下方向之中的至少一个方向移动,通过第2保持部件(5)保持基材(6)；和,第三步骤,在通过第2保持部件(5)而被保持的基材的表面上,通过化学气相生长而形成覆膜。根据本发明,能够提供能够通过1次成膜而在基材整面上形成覆膜的化学气相生长装置和覆膜形成方法。(The present invention is the chemical vapor-phase growing apparatus to form a film on the surface for the substrate (6) being held in reaction vessel, in reaction vessel, can keep with the 1st holding member (4) for being able to maintain substrate (6) and independently the 2nd holding member (5) of substrate (6) with the 1st holding member (4), the 1st holding member (4) and the 2nd holding member (5) at least one of holding member can be moved along up and down direction.In addition, film formation method of the invention includes: first step, substrate (6) are kept by the 1st holding member (4), overlay film is formed by chemical vapor-phase growing on substrate surface；Second step, by make the 1st holding member (4) and the 2nd holding member (5) at least one of holding member moved along at least one direction among upper direction and lower direction, pass through the 2nd holding member (5) and keep substrate (6)；With third step forms overlay film by chemical vapor-phase growing on the surface for the substrate being kept by the 2nd holding member (5).In accordance with the invention it is possible to provide the chemical vapor-phase growing apparatus and film formation method that can form overlay film in substrate whole face by 1 film forming.)

1. chemical vapor-phase growing apparatus is the chemical gaseous phase for forming a film on the surface for the substrate being held in reaction vessel Grower, which is characterized in that

In the reaction vessel, equipped with for keeping the holding meanss of more than one substrate；

The holding meanss have more than one for keeping the holding structure an of substrate；

The holding structure at least has the 1st holding member for being able to maintain the substrate and can be with the 1st holding member Independently keep the 2nd holding member of the substrate；

1st holding member and the 2nd holding member at least one of holding member can be along up and down direction It is mobile.

2. chemical vapor-phase growing apparatus according to claim 1, wherein keep the holding member of the substrate can be in institute It states and is changed between the 1st holding member and the 2nd holding member.

3. chemical vapor-phase growing apparatus according to claim 1 or 2, wherein in film forming procedure, contacted with holding member The position of supporting-point of the substrate can change.

4. chemical vapor-phase growing apparatus described according to claim 1 ~ any one of 3, wherein the holding structure can make institute State substrate rotation.

5. chemical vapor-phase growing apparatus described according to claim 1 ~ any one of 4, wherein the holding structure can make institute Substrate is stated to move along horizontal direction.

6. chemical vapor-phase growing apparatus described according to claim 1 ~ any one of 5, wherein the 1st holding member and institute The 2nd holding member is stated to contact at two or more supporting-points with the substrate.

7. chemical vapor-phase growing apparatus described according to claim 1 ~ any one of 6, wherein the 1st holding member and institute State effective contact area of an average supporting-point for substrate and an average bearing for the 2nd holding member and the substrate Effective contact area of point is respectively 20mm²Below.

8. film formation method, at least there is the 1st holding member for keeping substrate and with the 1st holding member it is only It on the spot keeps in the reaction vessel of the 2nd holding member of the substrate, is formed on substrate surface by chemical vapor-phase growing The method of overlay film characterized by comprising

First step keeps the substrate by the 1st holding member, passes through chemical vapor-phase growing on the substrate surface And form overlay film；

Second step, by make the 1st holding member and the 2nd holding member at least one of holding member edge At least one direction among upper direction and lower direction it is mobile, substitute the 1st holding member, and keep by the described 2nd Component keeps the substrate；With

Third step passes through chemical vapor-phase growing on the surface for the substrate being kept by the 2nd holding member And form overlay film.

9. film formation method according to claim 8, wherein the first step to third step is in film forming procedure It carries out.

Technical field

The present invention relates to the chemical vapor-phase growing apparatus and overlay film shape for forming functional overlay film etc. on substrate surface At method.

Background technique

Boron nitride (PBN), thermally decomposed carbon (PG), tantalum carbide (TaC), aluminium nitride (AlN), silicon carbide (SiC) will be thermally decomposed The component that equal materials form a film to assign on substrate surface the functions such as heat resistance, corrosion resistance is widely used in semiconductors manufacture Device etc..

For example, by being coated with PBN in carbon substrate, obtain having high-insulativity, heat resistance and the strong component of thermal shock. PBN is obtained by chemical vapor-phase growing (CVD) method, has high-purity, high intensity, anisotropic properties and high heat conductance etc Characteristic, can to carbon substrate assign boron nitride (BN) script excellent characteristics.Further, PBN is difficult to react with most materials, It is not also reacted with metal, compound under low-temperature oxidation atmosphere, high temperature not active gases atmosphere, therefore is coated with the component of PBN It is used as the heater, pedestal etc. of Metal Organic Chemical Vapor growth method (MOCVD) device.

PG be it is chemically stable, high-purity, thermal stability is also high, impermeability, and thermal conductivity is high.It is coated in carbon substrate The component of PG is used as high temperature wafers pedestal, anode, MOCVD device feature, ion implantation apparatus component etc..

TaC fusing point highest (about 3900 DEG C) in transition metal carbide, chemical stability, intensity, toughness and corrosion-resistant Property is excellent.Carbon substrate, TaC sintered body surface on cover TaC film obtained from tantalum carbide covering material in Si, SiC, GaN It is used as component in equal apparatus for manufacturing semiconductor single crystal.When covering TaC film by CVD method on TaC sintered body, it is capable of forming The overlay film of homogeneous without sintering aid and purity is high, can be improved functionality.

Insulating properties, the thermal conductivity of AlN is high, is the ceramics of lightweight.Due to the characteristic, be coated with the carbon substrate of AlN by with In high thermal conductivity component, heat-resistant part, corrosion resistant component, container of metal melting etc..

Other than being coated with the carbon substrate of the SiC characteristic possessed by the carbon, resistance to physical impact also becomes by force, also has rapidly office Heat patience in portion.In addition, be coated with the carbon substrate of SiC to about 700 DEG C at a temperature of be also able to use in oxidation atmosphere, it is difficult To generate the particles such as carbon dust, therefore be used for epitaxial growth device pedestal, CVD pedestal, heater etc..

Such material is more the case where covering in substrate whole face in order to give full play to its functionality.But pass through Fig. 5 Shown such previous CVD device and when substrate surface forms overlay film, in the contact portion of substrate 6 and substrate holding member 4 Overlay film can not be formed by dividing.Therefore, substrate is designed in such a way that the contact area of substrate and substrate holding member is as small as possible to keep Component.However, even if substrate holding member is used like this, at the supporting-point contacted with the substrate holding member in substrate Overlay film can not be formed.Therefore, it in the case where covering substrate whole face, needs to change supporting-point and repeatedly form a film.In addition, the situation In, there is also in the interface for forming a film obtained film and the obtained film that forms a film for the second time for the first time, physical property becomes discontinuously to wait classes Topic.In this regard, proposing kinds of schemes so far.

In patent document 1, describing floats substrate by electromagnetic force while heating high frequency heating coil, to base Material whole face carries out homogeneous film formation.However, need a large amount of electric power in this method, substrate is also limited to light weight and small-sized, therefore as amount Production technology is unsuitable.

It in patent document 2, proposes by making supporting-point continuous moving in film forming procedure, to form the overlay film of homogeneous Technology.This method is carried out due to being hung and making support rod pass through the through hole of substrate, and there are the shapes of substrate Limited problem.

In patent document 3, proposing use and being covered with thermally decomposed carbon or silicon carbide and have width is that 10mm is below more The supporting station of a supporting part.In this method, although pillar trace is reduced, narrow eyes into a slit has disappearance.

In patent document 4, the impact for applying pettiness to the bearing part of substrate is proposed, thus making substrate and supporting part It is coated while the contact site displacement of part.It can be coated with whole face in 1 film forming as a result, but because of substrate and bearing part Friction caused by substrate, overlay film abrasion, rupture become problem.

Summary of the invention

Subject to be solved by the invention

Therefore, the object of the present invention is to provide do not cause the abrasion of substrate, overlay film, rupture, can be by 1 film forming The chemical vapor-phase growing apparatus and film formation method of overlay film are formed in substrate whole face.

The means used to solve the problem

It is that the present inventor is furtherd investigate as a result, it has been found that, make chemical vapor-phase growing apparatus have be able to maintain substrate the 1st protect It holds component and can independently keep the 2nd holding member of substrate with the 1st holding member, further make the 1st holding member and 2 holding members at least one of holding member can be moved along up and down direction, it is complete so as to solve the above subject At the present invention.Purport of the invention is as described below.

[1] chemical vapor-phase growing apparatus is the change for forming a film on the surface for the substrate being held in reaction vessel Epitaxially growing equipment is learned, in reaction vessel, equipped with for keeping the holding meanss of more than one substrate, holding meanss have The more than one holding structure for being used to keep a substrate, keeps structure at least to have the 1st maintaining part for being able to maintain substrate Part and the 2nd holding member that substrate can be independently kept with the 1st holding member, the 1st holding member and the 2nd holding member it At least one of holding member can be moved along up and down direction.

[2] chemical vapor-phase growing apparatus according to above-mentioned [1], wherein keep the holding member of substrate can be the 1st It is changed between holding member and the 2nd holding member.

[3] chemical vapor-phase growing apparatus according to above-mentioned [1] or [2], wherein in film forming procedure, with maintaining part The position of the supporting-point of the substrate of part contact can change.

[4] chemical vapor-phase growing apparatus according to any one of above-mentioned [1] ~ [3], wherein keep structure that can make Substrate rotation.

[5] chemical vapor-phase growing apparatus according to any one of above-mentioned [1] ~ [4], wherein keep structure that can make Substrate is moved along horizontal direction.

[6] chemical vapor-phase growing apparatus according to any one of above-mentioned [1] ~ [5], wherein the 1st holding member and 2 holding members contact at two or more supporting-points with substrate.

[7] chemical vapor-phase growing apparatus according to any one of above-mentioned [1] ~ [6], wherein the 1st holding member and base Effective contact area of an average supporting-point for material and the 2nd holding member are contacted with the effective of an average supporting-point of substrate Area is respectively 20mm²Below.

[8] film formation method, at least to have the 1st holding member, 1 holding member of He Yu of holding substrate only In the reaction vessel of the 2nd holding member on the spot keeping substrate, overlay film is formed by chemical vapor-phase growing on substrate surface Method characterized by comprising first step, by the 1st holding member keep substrate, pass through chemistry on substrate surface Vapor phase growth and form overlay film；Second step, by make the 1st holding member and the 2nd holding member at least one of guarantor It holds component to move along at least one direction among upper direction and lower direction, substitutes the 1st holding member, and kept by the 2nd Component keeps substrate；With third step passes through chemical gaseous phase on the surface for the substrate being kept by the 2nd holding member It grows and forms overlay film.

[9] film formation method according to above-mentioned [8], wherein first step to third step carries out in film forming.

Invention effect

In accordance with the invention it is possible to form overlay film in substrate whole face by 1 film forming, therefore the more of change supporting-point are not needed Secondary film forming, productivity improve.Particularly, if it is desired to repeatedly formed a film by thermal cvd, then in addition to film formation time it Outside, it is also necessary to for being warming up to the reaction temperature of higher temperatures, the time of cooling.Therefore, according to the present invention, especially thermal cvd In the case where, productivity greatly improves.

Detailed description of the invention

Fig. 1 is the generalized schematic for showing an example of the holding meanss in the CVD device of an embodiment of the invention.

Fig. 2 is the generalized schematic for showing an example of the reaction vessel in the CVD device of an embodiment of the invention.

Fig. 3 is the generalized schematic for showing an example of the reaction vessel in the CVD device of an embodiment of the invention.

Fig. 4 is the generalized schematic for showing the movement of the holding structure in CVD device used in embodiment.

Fig. 5 is the generalized schematic for showing an example of the reaction vessel in previous CVD device.

Specific embodiment

[chemical vapor-phase growing apparatus]

Chemical vapor-phase growing apparatus in an embodiment of the invention is on the surface for the substrate being held in reaction vessel Film forming is equipped with the holding meanss for keeping more than one substrate in reaction vessel.Holding meanss have more than one For keeping the holding structure an of substrate, structure is kept at least to there is the 1st holding member for being able to maintain substrate and can be with 1st holding member independently keeps the 2nd holding member of substrate.Also, among the 1st holding member and the 2nd holding member extremely The holding member of few one can be moved along up and down direction.The chemical gaseous phase in an embodiment of the invention is raw as a result, Growth device can form overlay film in substrate whole face by 1 film forming.Also, the multiple film forming of change supporting-point is not needed, Productivity improves.Chemical vapor-phase growing apparatus in an embodiment of the invention described further below.

Chemical vapor-phase growing apparatus in an embodiment of the invention is for being for example held in reaction vessel Substrate surface on film forming thermal decomposition boron nitride (PBN), thermally decomposed carbon (PG), tantalum carbide (TaC), aluminium nitride (AlN), carbonization Chemical vapor-phase growing (CVD) device of the materials such as silicon (SiC).

In CVD device in an embodiment of the invention, the material of film forming, the type of substrate, shape can be any Selection.In addition, the type of the CVD in CVD device in an embodiment of the invention is not particularly limited, of the invention one CVD device in a embodiment can also be applied to hot CVD, plasma CVD etc..

It should be noted that the available spreadability of CVD method is excellent, the uniform and good overlay film of film thickness distribution.In addition, hot CVD Method is not present as plasma CVD method, the worry for causing holding meanss to be damaged because of plasma.

CVD from the viewpoint of above-mentioned viewpoint and productivity capable of being greatly improved, in an embodiment of the invention Device forms the CVD device of overlay film preferably by thermal cvd on substrate surface.

In the reaction vessel of CVD device in an embodiment of the invention, equipped with for keeping more than one The holding meanss of substrate.From the viewpoint of production efficiency, holding meanss are preferably able to keep multiple substrates.

Holding meanss have more than one for keeping the holding structure an of substrate.Holding meanss keep multiple substrates When, multiple holding structures are equipped in holding meanss.

Further, holding structure at least has the 1st holding member for being able to maintain substrate and can be with the 1st holding member Independently keep the 2nd holding member of substrate.It should be noted that " can independently keep substrate with the 1st holding member " refers to i.e. Make that also substrate can be kept by the 2nd holding member without the 1st holding member.In addition, as long as structure is kept to have the 1st to protect Component and the 2nd holding member are held, then also can have the holding member other than the 1st holding member and the 2nd holding member.Example Such as, it keeps structure also to can have be able to maintain the 1st holding member of substrate, can independently keep base with the 1st holding member 2nd holding member of material and the 3rd holding member that substrate can be independently kept with the 1st holding member and the 2nd holding member.

1st holding member and the 2nd holding member at least one of holding member can be moved along up and down direction. Keep the holding member of substrate that can change between the 1st holding member and the 2nd holding member as a result,.As a result, forming a film In the process, the position of the supporting-point of the substrate contacted with holding member can be changed, therefore can be in substrate surface shape on the whole At overlay film.Also, the multiple film forming of change supporting-point is not needed, productivity improves.

Referring to Fig.1, the holding dress being arranged in CVD device in an embodiment of the invention is further described It sets.Fig. 1 is the skeleton diagram of an example for the holding meanss being arranged in the CVD device shown in an embodiment of the invention. Here, the substrate 6 that the 1st holding member 4 is kept is by the 2nd holding member 5 by moving the 2nd holding member 5 along upper direction It keeps.

In addition, the substrate 6 that the 2nd holding member 5 is kept is by the 1st by moving the 2nd holding member 5 along lower direction Holding member 4 is kept.

Like this, it by moving the 2nd holding member 5 along at least one direction among upper direction and lower direction, protects The holding member for holding substrate 6 can change between the 1st holding member 4 and the 2nd holding member 5.

It should be noted that also can be set to by making the 1st holding member 4 along at least one among upper direction and lower direction Direction is mobile, keeps the holding member of substrate 6 that can change between the 1st holding member 4 and the 2nd holding member 5.In addition, It can be set to by making both the 1st holding member 4 and the 2nd holding member 5 along at least one among upper direction and lower direction Direction is mobile, keeps the holding member of substrate 6 that can change between the 1st holding member 4 and the 2nd holding member 5.Like this, In CVD device in an embodiment of the invention, by making among the 1st holding member 4 and the 2nd holding member 5 at least The holding member of one is moved along at least one direction among upper direction and lower direction, keeps the holding member energy of substrate 6 It is enough to be changed between the 1st holding member 4 and the 2nd holding member 5.

Here, " can change between the 1st holding member 4 and the 2nd holding member 5 " is referred to from the 1st holding member 4 It is changed to the 2nd holding member 5, the 1st holding member 4 can be changed to from the 2nd holding member 5 or can be from the 1st holding member 4 It is changed to the 2nd holding member 5 and the 1st holding member 4 can be changed to from the 2nd holding member 5.

It should be noted that for for make the 1st holding member 4 and the 2nd holding member 5 at least one of holding member The movable mechanism that can be moved along up and down direction, is not particularly limited.

If the supporting-point of the substrate contacted with holding member can be changed like this, in film forming procedure, therefore When forming overlay film in substrate whole face, multiple film forming is needed not move through.

1st holding member and the 2nd holding member at least one of holding member along upper direction and lower direction it In at least one direction it is mobile and changed according to it supporting-point of substrate preferably carried out in film forming procedure it is multiple.As a result, It is able to suppress the inhomogeneities of the overlay film of supporting-point vicinity.

In addition it is also possible to when being set as the position of substrate when being kept by the 1st holding member with by the holding of the 2nd holding member The position of substrate changes in the up-down direction.By changing the position of substrate up and down, additionally it is possible to expect to improve overlay film entirety Uniformity.

By CVD method form a film PBN when, the boron chloride and ammonia that use as raw material at normal temperature to react Degree, reactivity is high, therefore there are the easy tendencies to form a film near the contact site with substrate first of unstrpped gas, overleaf Etc. gas be difficult to surround and form a film.

On the other hand, in the case where TaC, although the reactivity of raw material is not high, become the atoms such as the tantalic chloride in tantalum source It is higher than direct advance to measure the small gas phase of atomic weight such as big gas and the methane that becomes carbon source, therefore in the same manner as PBN, In Near the back side of complex shaped substrate, the supporting-point of narrow space, gas is difficult to surround and form a film.

By moving substrate along up and down direction in film forming procedure, make the contact of the flowing, substrate of gas with gas Position changes, therefore the uniformity of overlay film entirety improves.Therefore, homogeneous film formation especially is difficult in formation PBN, TaC etc. Material overlay film when, preferably move substrate along up and down direction in film forming procedure.

Further, it keeps structure that can make substrate rotation, can be moved along horizontal direction.In addition, keeping structure can be with It is moved while making substrate rotation along horizontal direction.Thereby, it is possible to make the flowing of gas change, therefore can be into one Step improves the uniformity of overlay film entirety.For example, substrate can be made to move along horizontal direction by making to keep structure revolution.This Outside, in order to further increase the uniformity of overlay film entirety, the rotation of substrate and the movement of the up and down direction of substrate, base can be combined The movement of the up and down direction of the movement and substrate of the horizontal direction of material or the rotation of substrate, the movement of the horizontal direction of substrate and The up and down direction of substrate.

As long as the 1st holding member and the 2nd holding member are able to maintain the component of substrate, it is not particularly limited.It is above-mentioned Holding member can be set to acicular supporting part for example sharp with multiple front ends, contact in front end with substrate.One substrate In, the quantity for the supporting-point that holding member is contacted with substrate is preferably two or more, more preferably three or more and four or less. As long as supporting-point is three or more, substrate can be more stably kept.It on the other hand, can not be at if supporting-point is excessive The position of film increases, and it is not preferable.

Effective contact area of an average supporting-point for 1st holding member and substrate and the 2nd holding member and substrate Effective contact area of an average supporting-point is respectively preferably 20mm²Below.Effective contact area supports in order not to remain Trace, it is expected that as small as possible.

Here, effective contact area, which refers to, does not change supporting-point, target material is formed a film as target thickness on substrate surface Degree forms bearing trace for a supporting-point and exposes the area of substrate.

In addition, if effective contact area of an average supporting-point is too small, then relative to contact area to substrate and guarantor The stress for holding component application becomes larger, and there are the worries that substrate deformation or holding member are worn away.Therefore, an average supporting-point has Effect contact area is more preferably 1mm²More than.

The material on the surface of holding member is not particularly limited, the material on surface preferably with the material that forms a film on substrate Or the material of composition substrate is identical.If material used in holding member is different from above-mentioned material, there are holding member with The reaction of unstrpped gas hair, the composition for being formed by overlay film change or impurity is spread from holding member and contaminated substrate, is covered The worry of film.

CVD device in an embodiment of the invention is directed in addition to comprising holding member, the holding of structure being kept to fill Except setting, it is not particularly limited, it is identical as general CVD device, it is arbitrarily devised according to purpose, needs.

CVD device in an embodiment of the invention can depressurize CVD device for for example external hot type.Fig. 2 and 3 An example of external hot type decompression CVD device is shown.Reaction vessel 1 has raw material supply unit 8 and exhaust portion 9, is further provided with Heater 7.

The corresponding unstrpped gas of material by raw material supply unit 8, for giving film forming.For example, when the material of overlay film is PBN, Supply ammonia (NH₃) it is such include nitrogen-atoms compound and boron chloride (BCl₃) as halogenation boron.The material of overlay film is When TaC, methane (CH is supplied₄) it is such include carbon atom compound and tantalic chloride (TaCl₅) as halogenation tantalum.Overlay film Material be PG when, be supplied separately to CH₄Such compound comprising carbon atom.When the material of overlay film is AlN, trimethyl is supplied Aluminium (Al (CH₃)₃) it is such include aluminium compound and NH₃Such compound comprising nitrogen-atoms.The material of overlay film is SiC When, supply silane (SiH₄) it is such include silicon atom compound and propane (C₃H₈) it is such include carbon atom chemical combination Object.

Supplied unstrpped gas is set to carry out thermal cvd reactor under 900 ~ 1900 DEG C, the high-temperature pressure-reduction of 1 ~ 100Pa, in base The functional materials such as PBN, TaC, PG, AlN, SiC are formed a film on material surface.

It this concludes the description of the CVD device in an embodiment of the invention, but CVD device of the invention is not limited to this CVD device in one embodiment of invention.

[film formation method]

Film formation method of the invention be at least have keep substrate the 1st holding member and with aforementioned 1st holding member In the reaction vessel of the 2nd holding member for independently keeping aforementioned substrates, pass through chemical vapor-phase growing shape on substrate surface At the method for overlay film comprising:

First step keeps substrate by the 1st holding member, forms overlay film by chemical vapor-phase growing on substrate surface；

Second step, by make the 1st holding member and the 2nd holding member at least one of holding member along upper direction It is mobile at least one direction among lower direction, the 1st holding member is substituted, and substrate is kept by the 2nd holding member；With

Third step is formed by chemical vapor-phase growing and is covered on the surface for the substrate being kept by the 2nd holding member Film.Thereby, it is possible to form overlay film in substrate whole face by 1 film forming.Also, the multiple film forming of change supporting-point is not needed, Productivity improves.

(reaction vessel)

As long as reaction vessel used in film formation method of the invention can implement above-mentioned first step to third step Reaction vessel, be not particularly limited.As reaction vessel used in film formation method of the invention, example can be used Such as the reaction vessel of the CVD device in above-mentioned an embodiment of the invention.Hereinafter, enumerating above-mentioned of the invention one For the reaction vessel of CVD device in embodiment, illustrate film formation method of the invention.

(first step)

In first step, substrate is kept by the 1st holding member, is formed cover by chemical vapor-phase growing on substrate surface Film.It should be noted that for the chemical vapor-phase growing on the 1st holding member and substrate surface, with an above-mentioned reality of the invention It applies and illustrates explanation that is identical, therefore omitting these in the CVD device in mode.

(second step)

In second step, by make the 1st holding member and the 2nd holding member at least one of holding member along top To, substitution 1st holding member mobile at least one direction among lower direction, and substrate is kept by the 2nd holding member；By This, can change the position of the supporting-point of the substrate contacted with holding member.It should be noted that being protected for the 1st holding member and the 2nd Hold component at least one of holding member in upper direction and lower direction among at least one direction movement and the 2nd Holding member, it is identical as illustrating in the CVD device in above-mentioned an embodiment of the invention, therefore omit saying for these It is bright.

(third step)

In third step, on the surface for the substrate being kept by the 2nd holding member, formed by chemical vapor-phase growing Overlay film.Thereby, it is possible to from the position of the supporting-point of the substrate contacted with holding member in first step, change and maintaining part The position of the supporting-point of the substrate of part contact, forms overlay film by chemical vapor-phase growing on substrate surface, therefore can be Overlay film is formed in substrate whole face.It should be noted that for the chemical vapor-phase growing on substrate surface, with above-mentioned of the invention one What is illustrated in CVD device in embodiment is identical, therefore the description thereof will be omitted.

It should be noted that first step carries out preferably in film forming procedure to third step.Thereby, it is possible to pass through 1 film forming And overlay film being formed in substrate whole face, therefore do not need the multiple film forming of change supporting-point, productivity improves.For example, it is preferable to While forming overlay film on the surface of the substrate by chemical vapor-phase growing, implement second step.

In addition, preferably repeatedly implementing that there is step 1 to recycle suddenly to the step of third step in 1 film forming procedure.As a result, It is able to suppress the inhomogeneities of the overlay film of supporting-point vicinity.

More than, as reaction vessel used in film formation method of the invention, enumerate above-mentioned of the invention one For the reaction vessel of CVD device in embodiment, illustrate film formation method of the invention.But overlay film of the invention Forming method is not limited to the film formation method using the CVD device in an embodiment of the invention.