阅读说明：本技术 一种掺杂方法、单晶装置及单晶炉 (A kind of doping method, monocrystalline device and single crystal growing furnace ) 是由 锁志云 *** 涂准 于 2019-09-03 设计创作，主要内容包括：本发明提供了一种掺杂方法、单晶装置及单晶炉,所述方法包括：在拉制当前单晶硅棒前,向硅熔料中加入第一预设质量的掺杂剂；在当前单晶硅棒的拉制过程中,检测当前单晶硅棒的生长长度；当所述当前单晶硅棒生长长度满足预设条件时,向硅熔料中加入与第二预设质量成比例的掺杂剂。本发明能够使掺杂剂的添加和当前单晶硅棒的拉制同步进行,且在拉制单晶硅的过程中,当当前单晶硅棒的生长长度满足预设条件时,向硅熔料中加入掺杂剂,由于坩埚转动产生的向心力,能够使掺杂剂均匀的分布在硅熔料液表面上,从而保证拉制的当前单晶硅棒各个部分掺杂剂的均匀性,提高了制备的当前单晶硅棒的电阻均匀性,进而提高了当前单晶硅棒的实际产量。(The present invention provides a kind of doping method, monocrystalline device and single crystal growing furnaces, which comprises before drawing current silicon single crystal rod, the dopant of the first preset quality is added into silicon melt；In the pulling process of current silicon single crystal rod, the growth length of current silicon single crystal rod is detected；When the current silicon single crystal rod growth length meets preset condition, the dopant proportional to the second preset quality is added into silicon melt.The present invention can make the addition of dopant is synchronous with the drawing of current silicon single crystal rod to carry out, and during drawn monocrystalline silicon, when the growth length of current silicon single crystal rod meets preset condition, dopant is added into silicon melt, the centripetal force generated due to crucible rotation, dopant can be made to be evenly distributed on silicon melt liquid surface, to guarantee the uniformity of the current silicon single crystal rod various pieces dopant drawn, the resistance homogeneity of the current silicon single crystal rod of preparation is improved, and then improves the actual production of current silicon single crystal rod.)

1. a kind of doping method, which is characterized in that be applied in single crystal growing furnace, which comprises

Before drawing current silicon single crystal rod, the dopant of the first preset quality is added into silicon melt；

In the pulling process of current silicon single crystal rod, the growth length of current silicon single crystal rod is detected；

When the current silicon single crystal rod growth length meets preset condition, into silicon melt be added with the second preset quality at than The dopant of example.

2. the method according to claim 1, wherein the preset condition includes: that the current silicon single crystal rod is raw Ratio between length and the predetermined overall length of the current silicon single crystal rod is m:n, wherein n>0, the m<n；

It is described when the current silicon single crystal rod growth length meets preset condition, into silicon melt be added with the second preset quality Proportional dopant includes:

When the current silicon single crystal rod growth length meets the current silicon single crystal rod growth length and the current silicon single crystal rod Predetermined overall length between ratio when being m:n, the dopant proportional to the second preset quality is added in Xiang Suoshu silicon melt.

3. according to the method described in claim 2, it is characterized in that, the predetermined position in the single crystal growing furnace is provided with multiple light Dependent sensor, wherein the predeterminated position is the current silicon single crystal rod growth length and the current list in the single crystal growing furnace The position that ratio between the predetermined overall length of crystalline silicon rod is m:n；

It is described in the pulling process of current silicon single crystal rod, the growth length for detecting current silicon single crystal rod includes:

In the pulling process of current silicon single crystal rod, the multiple photosensitive sensor being arranged in the single crystal growing furnace, inspection are utilized Survey the growth length of current silicon single crystal rod.

4. according to the method described in claim 3, it is characterized in that, the quantity of the multiple photosensitive sensor is 4；

The multiple photosensitive sensor it is equidistant or it is non-it is equidistant be arranged in the single crystal growing furnace.

5. according to the method described in claim 2, it is characterized in that,

The gross mass of the dopant is by the default gross mass of the current silicon single crystal rod and presetting for the current silicon single crystal rod Resistivity determines；

Ratio between second preset quality and dopant gross mass is x:y；Wherein, x>0, the x<y.

6. the method according to claim 1, wherein the method also includes: current silicon single crystal rod, which is drawn, to be completed Afterwards, the dopant of third preset quality is added in Xiang Suoshu silicon melt.

7. a kind of monocrystalline device, which is characterized in that the monocrystalline device includes: the first control module, detection module and the second control Molding block；

First control module is used for before drawing current silicon single crystal rod, and the doping of the first preset quality is added into silicon melt Agent；

The detection module is used in the pulling process of current silicon single crystal rod, detects the growth length of current silicon single crystal rod；

Second control module is used for when the current silicon single crystal rod growth length meets preset condition, is added into silicon melt Enter the dopant proportional to the second preset quality.

8. monocrystalline device according to claim 7, which is characterized in that the preset condition includes: the current monocrystalline silicon Ratio between stick growth length and the predetermined overall length of the current silicon single crystal rod is m:n, wherein n>0, m<n；

Second control module is used to meet the current silicon single crystal rod growth length when the current silicon single crystal rod growth length When ratio between degree and the predetermined overall length of the current silicon single crystal rod is m:n, it is added in Xiang Suoshu silicon melt with second in advance If the proportional dopant of quality.

9. a kind of single crystal growing furnace, which is characterized in that the single crystal growing furnace includes: interface, bus, memory and processor, the interface, Memory is connected with processor by the bus, and the memory for storing executable program, matched by the processor The operation executable program is set to realize such as the step of doping method described in any one of claims 1 to 6.

10. a kind of computer readable storage medium, which is characterized in that store executable journey on the computer readable storage medium Sequence, the executable code processor operation are realized such as the step of doping method described in any one of claims 1 to 6.

Technical field

The present invention relates to silicon single crystal rod manufacturing technology fields, more particularly to a kind of doping method, monocrystalline device and monocrystalline Furnace.

Background technique

During preparing solar level or semiconductor grade silicon single crystal rod, dopant is usually added to the crucible of single crystal growing furnace Silicon melt in, then silicon single crystal rod is drawn by single crystal growing furnace.

Due in the preparation process of current current silicon single crystal rod, producing line fluctuation of service, and because each layer silicon is molten in crucible The concentration of dopant difference in material causes the resistance homogeneity of the silicon single crystal rod of preparation to be difficult to meet standard, and then influences The quality of silicon single crystal rod.

Summary of the invention

The present invention provides a kind of doping method, monocrystalline device and single crystal growing furnace, it is intended to solve the silicon single crystal rod prepared at present electricity Resistance uniformity is difficult to meet standard, and then the problem of the quality of influence silicon single crystal rod.

In a first aspect, being applied to draw in current silicon single crystal rod, the method packet the invention discloses a kind of doping method It includes:

Before drawing current silicon single crystal rod, the dopant of the first preset quality is added into silicon melt；

In the pulling process of current silicon single crystal rod, the growth length of current silicon single crystal rod is detected；

When the current silicon single crystal rod growth length meets preset condition, it is added and the second preset quality into silicon melt Proportional dopant.

Optionally, the preset condition includes: the current silicon single crystal rod growth length and the current silicon single crystal rod Ratio between predetermined overall length is m:n, wherein n>0, m<n；

It is described when the current silicon single crystal rod growth length meets preset condition, be added into silicon melt with it is second default The proportional dopant of quality includes:

When the current silicon single crystal rod growth length meets the current silicon single crystal rod growth length and the current monocrystalline When ratio between the predetermined overall length of silicon rod is m:n, proportional to the second preset quality mix is added in Xiang Suoshu silicon melt Miscellaneous dose.

Optionally, the predetermined position in the single crystal growing furnace is provided with multiple photosensitive sensors, wherein the predeterminated position For the ratio between current silicon single crystal rod growth length described in the single crystal growing furnace and the predetermined overall length of the current silicon single crystal rod Example is the position of m:n；

It is described in the pulling process of current silicon single crystal rod, the growth length for detecting current silicon single crystal rod includes:

In the pulling process of current silicon single crystal rod, the multiple light sensor being arranged in the single crystal growing furnace is utilized Device detects the growth length of current silicon single crystal rod.

Optionally, the quantity of the multiple photosensitive sensor is 4；

The multiple photosensitive sensor it is equidistant or it is non-it is equidistant be arranged in the single crystal growing furnace.

Optionally, default gross mass and the current monocrystalline of the gross mass of the dopant by the current silicon single crystal rod The preset resistance rate of silicon rod determines；

Ratio between second preset quality and dopant gross mass is x:y；Wherein, x>0, the x<described y。

Optionally, the method also includes: after the completion of current silicon single crystal rod is drawn, third is added in Xiang Suoshu silicon melt The dopant of preset quality.

Second aspect, the invention discloses a kind of monocrystalline device, the monocrystalline device includes: the first control module, detection Module and the second control module；

First control module is used for before drawing current silicon single crystal rod, and the first preset quality is added into silicon melt Dopant；

The detection module is used in the pulling process of current silicon single crystal rod, and the growth for detecting current silicon single crystal rod is long Degree；

Second control module is used for when the current silicon single crystal rod growth length meets preset condition, to silicon melt It is middle that the dopant proportional to the second preset quality is added.

Optionally, the preset condition includes: the current silicon single crystal rod growth length and the current silicon single crystal rod Ratio between predetermined overall length is m:n, wherein n>0, m<n；

Second control module is used to meet the current silicon single crystal rod life when the current silicon single crystal rod growth length It is added when ratio between length and the predetermined overall length of the current silicon single crystal rod is m:n, in Xiang Suoshu silicon melt and the The proportional dopant of two preset qualities.

Optionally, the predetermined position in the monocrystalline device is provided with multiple photosensitive sensors, wherein the default position It is set in the monocrystalline device between the current silicon single crystal rod growth length and the predetermined overall length of the current silicon single crystal rod Ratio be m:n position；

The detection module is also used in the pulling process of current silicon single crystal rod, using setting in the monocrystalline device The multiple photosensitive sensor, detect the growth length of current silicon single crystal rod.

Optionally, the quantity of the multiple photosensitive sensor is 4；

The multiple photosensitive sensor it is equidistant or it is non-it is equidistant be arranged in the single crystal growing furnace.

Optionally, default gross mass and the current monocrystalline of the gross mass of the dopant by the current silicon single crystal rod The preset resistance rate of silicon rod determines；

Ratio between second preset quality and dopant gross mass is x:y；Wherein, x>0, the x<described y。

Optionally, the monocrystalline device further include: third control module, the third control module are used for current monocrystalline silicon After the completion of stick is drawn, the dopant of third preset quality is added in Xiang Suoshu silicon melt.

The third aspect, the embodiment of the invention provides a kind of single crystal growing furnace, the single crystal growing furnace includes: interface, bus, memory With processor, the interface, memory are connected with processor by the bus, and the memory is for storing executable journey Sequence, the processor is configured to running the step of executable program realizes doping method above-mentioned.

Fourth aspect present invention provides a kind of computer readable storage medium, stores on the computer readable storage medium The step of executable program, doping method as the aforementioned is realized in the executable code processor operation.

In embodiments of the present invention, which comprises before drawing current silicon single crystal rod, be added first into silicon melt The dopant of preset quality；In the pulling process of current silicon single crystal rod, the growth length of current silicon single crystal rod is detected；When described When current silicon single crystal rod growth length meets preset condition, the doping proportional to the second preset quality is added into silicon melt Agent.The addition of dopant of the present invention is synchronous with the drawing of current silicon single crystal rod to be carried out, and dopant is divided into two parts by the present invention It is added, the dopant including the first preset quality is added before drawing current silicon single crystal rod, in the mistake for drawing crystal pulling silicon rod The dopant proportional to the second preset quality is repeatedly added in journey, first preset quality and the second preset quality are by thing It is first calculated, the dopant of the first mass is added before drawing, the electricity of the current silicon single crystal rod in the part of initial preparation can be made Resistance rate is met the requirements.During drawn monocrystalline silicon, when the growth length of current silicon single crystal rod meets preset condition, to silicon Dopant is added in melt, due to the centripetal force that crucible rotation generates, the silicon melt surface that dopant can be made uniformly to be distributed On, to guarantee the uniformity of the current silicon single crystal rod various pieces dopant drawn, improve the current silicon single crystal rod of preparation Resistance homogeneity, and then improve the quality and actual production of current silicon single crystal rod.

Detailed description of the invention

In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by institute in the description to the embodiment of the present invention Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings Obtain other attached drawings.

Fig. 1 shows the step flow chart of one of the embodiment of the present invention one doping method；

Fig. 2 shows the structural schematic diagrams of one of the embodiment of the present invention one single crystal growing furnace；

Fig. 3 shows the step flow chart of one of the embodiment of the present invention two doping method；

Fig. 4 shows the structural schematic diagram of one of the embodiment of the present invention two single crystal growing furnace；

Fig. 5 shows the schematic diagram of one of embodiment of the present invention three monocrystalline device；

Fig. 6 shows the logical construction schematic diagram of one of three of embodiment of the present invention single crystal growing furnaces.

Description of symbols: 10- adulterates device, 101- dopant receiving portion, 102- dopant addition portion, 11- light sensor Device transmitting terminal, 12- photosensitive sensor receiving end, the current silicon single crystal rod of 13-, 14- silicon melt, the opening on 15- single crystal growing furnace.

Specific embodiment

Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are some of the embodiments of the present invention, instead of all the embodiments.Based on this hair Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts Example, shall fall within the protection scope of the present invention.