阅读说明：本技术 探测器及其制作方法以及装置 (Detector and manufacturing method and device thereof ) 是由 刘曼文 李志华 成文政 于 2021-08-16 设计创作，主要内容包括：本申请公开了一种探测器及其制作方法以及装置,所述探测器包括：在第一方向上相对设置的第一探测器单元和第二探测器单元；所述第一探测器单元包括：在所述第一方向上延伸的第一柱状电极；包围所述第一柱状电极的第一介质区；包围所述第一介质区的第一多边形电极；所述第二探测器单元包括：在所述第一方向上延伸的第二柱状电极；包围所述第二柱状电极的第二介质区；包围所述第二介质区的第二多边形电极；所述第一柱状电极与所述第二柱状电极为同一柱体在所述第一方向上相对的两部分。应用本发明提供的技术方案,通过双面刻蚀工艺,贯穿整个硅体,可以减少死区的比例,并且该探测器在工作时,粒子可双面入射,探测效率高,反应灵敏。(The application discloses detector and manufacturing method and device thereof, the detector includes: a first detector unit and a second detector unit disposed opposite to each other in a first direction; the first detector unit includes: a first columnar electrode extending in the first direction; a first dielectric region surrounding the first columnar electrode; a first polygonal electrode surrounding the first dielectric region; the second detector unit includes: a second columnar electrode extending in the first direction; a second dielectric region surrounding said second columnar electrode; a second polygonal electrode surrounding the second dielectric region; the first columnar electrode and the second columnar electrode are two parts of the same column body opposite to each other in the first direction. By applying the technical scheme provided by the invention, the proportion of dead zones can be reduced by penetrating the whole silicon body through a double-sided etching process, and the detector can realize double-sided incidence of particles during operation, so that the detection efficiency is high and the reaction is sensitive.)

1. A probe, comprising:

a first detector unit and a second detector unit disposed opposite to each other in a first direction;

the first detector unit includes: a first columnar electrode extending in the first direction; a first dielectric region surrounding the first columnar electrode; a first polygonal electrode surrounding the first dielectric region;

the second detector unit includes: a second columnar electrode extending in the first direction; a second dielectric region surrounding said second columnar electrode; a second polygonal electrode surrounding the second dielectric region;

the first columnar electrode and the second columnar electrode are two parts of the same column opposite to each other in the first direction;

in the first direction, the outer side wall of the second polygonal electrode does not exceed the area surrounded by the outer side wall of the first polygonal electrode, and at least part of the outer side wall of the second polygonal electrode is overlapped with the outer side wall of the first polygonal electrode.

2. The detector of claim 1, wherein the first and second polygonal electrodes are identical in shape, both being regular n-sided polygons, n being a positive integer greater than 2;

the outer side wall of the first polygonal electrode is completely overlapped with the outer side wall of the second polygonal electrode.

3. The detector of claim 1, wherein the first polygonal electrode is a positive n-sided polygon, n being a positive integer greater than 2;

the second polygonal electrode is a regular m-polygon, and m is 2 n;

the regular m-polygon is an inscribed polygon of the regular n-polygon.

4. The detector of claim 1, wherein the first cylindrical electrode and the second cylindrical electrode are each cylindrical or regular polygonal.

5. The detector of claim 1, wherein the first dielectric region is made of silicon, silicon oxide, Ge, GaN, SiC, HgI₂、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI₂Or a combination of one or more of AlSb;

the material of the second medium region adopts silicon, silicon oxide, Ge, GaN, SiC and HgI₂、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI₂Or a combination of one or more of AlSb.

6. The detector of claim 1, wherein a sum of thicknesses of the first detector cell and the second detector cell is 200um to 700 um.

7. The detector of claim 1, wherein the first detector cell and the second detector cell are each a PIN junction;

the first polygonal electrode and the second polygonal electrode are heavily doped with P-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with N-type silicon, and the first dielectric region and the second dielectric region are lightly doped with N-type silicon;

or the first polygonal electrode and the second polygonal electrode are heavily doped with N-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with P-type silicon, and the first dielectric region and the second dielectric region are lightly doped with P-type silicon;

or the first polygonal electrode and the second polygonal electrode are heavily doped with N-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with P-type silicon, and the first dielectric region and the second dielectric region are lightly doped with N-type silicon;

or the first polygonal electrode and the second polygonal electrode are heavily doped with P-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with N-type silicon, and the first dielectric region and the second dielectric region are lightly doped with P-type silicon.

8. The detector of claim 1, wherein a surface of the second polygonal electrode and the second cylindrical electrode facing away from the first detector cell is covered with an electrode contact layer, and a surface of the second dielectric region facing away from the first detector cell is covered with an insulating layer.

9. A method of fabricating a detector, the method comprising:

providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first part and a second part which are opposite in a first direction;

forming a first detector cell in the first portion and a second detector cell in the second portion;

the first detector unit includes: a first columnar electrode extending in the first direction; a first dielectric region surrounding the first columnar electrode; a first polygonal electrode surrounding the first dielectric region;

the second detector unit includes: a second columnar electrode extending in the first direction; a second dielectric region surrounding said second columnar electrode; a second polygonal electrode surrounding the second dielectric region;

the first columnar electrode and the second columnar electrode are two parts of the same column opposite to each other in the first direction;

in the first direction, the outer side wall of the second polygonal electrode does not exceed the area surrounded by the outer side wall of the first polygonal electrode, and at least part of the outer side wall of the second polygonal electrode is overlapped with the outer side wall of the first polygonal electrode.

10. An apparatus, characterized in that the apparatus comprises: a plurality of detectors according to any of claims 1 to 8 arranged in an array.

Technical Field

The invention relates to the technical fields of photoelectric detection, particle detection, high-energy physics, celestial body physics and the like, in particular to a detector and a manufacturing method and device thereof.

Background

The detector is widely applied to the technical fields of high-energy physics, celestial body physics, aerospace, military, medicine and the like, and in the high-energy physics and the celestial body physics, the detector works under the condition of strong radiation, so that the requirements on the energy resolution response speed and the like of the detector are high, strong radiation resistance is required, the leakage current and the full depletion voltage cannot be too large, and different requirements on the size of the volume are also required.

The traditional three-dimensional groove electrode silicon detector has a plurality of defects, firstly, the three-dimensional groove electrode silicon detector can not completely penetrate through the whole silicon body when electrode etching is carried out, so that one part of the detector can not be etched, the part is called as a dead zone, the electric field of the dead zone part is weak, the charge distribution is uneven, and the performance of the detector is further influenced; also, the "dead" portion occupies 20% -30% of the single detector, and if arrayed, a greater proportion. Secondly, the traditional three-dimensional groove electrode silicon detector can only be etched on a single surface. Finally, when the detector works, particles can only be incident on a single surface, and the detection efficiency is influenced.

At present, there are inventions such as a three-dimensional open/close type cell/shell type electrode detector in a design for reducing a "dead zone". However, the open-close type electrode affects the electric field distribution of the active area of the detector, thereby affecting the drift and collection of carriers, and reducing the detection efficiency of the detector. Therefore, it is desirable to provide a new type of three-dimensional trench electrode detector.

Disclosure of Invention

In view of the above, the present invention provides a detector, a method and an apparatus for manufacturing the same, which can reduce the dead zone ratio by penetrating through the entire silicon body through a double-sided etching process, and when the detector operates, particles can enter from both sides, so that the detection efficiency is high, and the response is sensitive.

In order to achieve the purpose, the invention provides the following technical scheme:

a probe, comprising:

a first detector unit and a second detector unit disposed opposite to each other in a first direction;

the first detector unit includes: a first columnar electrode extending in the first direction; a first dielectric region surrounding the first columnar electrode; a first polygonal electrode surrounding the first dielectric region;

the second detector unit includes: a second columnar electrode extending in the first direction; a second dielectric region surrounding said second columnar electrode; a second polygonal electrode surrounding the second dielectric region;

the first columnar electrode and the second columnar electrode are two parts of the same column opposite to each other in the first direction;

in the first direction, the outer side wall of the second polygonal electrode does not exceed the area surrounded by the outer side wall of the first polygonal electrode, and at least part of the outer side wall of the second polygonal electrode is overlapped with the outer side wall of the first polygonal electrode.

Preferably, in the above detector, the first polygonal electrode and the second polygonal electrode have the same shape, both are regular n-polygons, and n is a positive integer greater than 2;

the outer side wall of the first polygonal electrode is completely overlapped with the outer side wall of the second polygonal electrode.

Preferably, in the above detector, the first polygonal electrode is a regular n-polygon, and n is a positive integer greater than 2;

the second polygonal electrode is a regular m-polygon, and m is 2 n;

the regular m-polygon is an inscribed polygon of the regular n-polygon.

Preferably, in the above detector, the first columnar electrode and the second columnar electrode are both cylindrical or regular polygonal.

Preferably, in the above detector, the material of the first dielectric region is silicon, silicon oxide, Ge, GaN, SiC, HgI₂、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI₂Or a combination of one or more of AlSb;

the material of the second medium area adopts silicon, silicon oxide, Ge, GaN, SiC,HgI₂、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI₂Or a combination of one or more of AlSb.

Preferably, in the above detector, the sum of the thicknesses of the first detector unit and the second detector unit is 200um to 700 um.

Preferably, in the above detector, the first detector unit and the second detector unit are both a PIN junction;

the first polygonal electrode and the second polygonal electrode are heavily doped with P-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with N-type silicon, and the first dielectric region and the second dielectric region are lightly doped with N-type silicon;

or the first polygonal electrode and the second polygonal electrode are heavily doped with N-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with P-type silicon, and the first dielectric region and the second dielectric region are lightly doped with P-type silicon;

or the first polygonal electrode and the second polygonal electrode are heavily doped with N-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with P-type silicon, and the first dielectric region and the second dielectric region are lightly doped with N-type silicon;

or the first polygonal electrode and the second polygonal electrode are heavily doped with P-type silicon, the first columnar electrode and the second columnar electrode are heavily doped with N-type silicon, and the first dielectric region and the second dielectric region are lightly doped with P-type silicon.

Preferably, in the above detector, the surfaces of the second polygonal electrode and the second cylindrical electrode facing away from the first detector unit are covered with an electrode contact layer, and the surface of the second dielectric region facing away from the first detector unit is covered with an insulating layer.

The invention also provides a manufacturing method of the detector, which comprises the following steps:

providing a semiconductor substrate, wherein the semiconductor substrate is provided with a first part and a second part which are opposite in a first direction;

forming a first detector cell in the first portion and a second detector cell in the second portion;

the first detector unit includes: a first columnar electrode extending in the first direction; a first dielectric region surrounding the first columnar electrode; a first polygonal electrode surrounding the first dielectric region;

the second detector unit includes: a second columnar electrode extending in the first direction; a second dielectric region surrounding said second columnar electrode; a second polygonal electrode surrounding the second dielectric region;

the first columnar electrode and the second columnar electrode are two parts of the same column opposite to each other in the first direction;

in the first direction, the outer side wall of the second polygonal electrode does not exceed the area surrounded by the outer side wall of the first polygonal electrode, and at least part of the outer side wall of the second polygonal electrode is overlapped with the outer side wall of the first polygonal electrode.

The present invention also provides an apparatus, comprising: a plurality of detectors according to any preceding claim, the detectors being arranged in an array.

According to the detector and the manufacturing method and device thereof provided by the technical scheme of the invention, the proportion of dead zones can be reduced by penetrating through the whole silicon body through the double-sided etching process, and particles can enter from two sides when the detector works, so that the detection efficiency is high, and the response is sensitive.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a detector according to an embodiment of the present invention;

FIG. 2 is a top view of a detector according to an embodiment of the present invention;

FIG. 3 is a side view of a probe provided in accordance with an embodiment of the present invention;

FIG. 4 is a cross-sectional view of the probe of FIG. 2 in the direction AA';

FIG. 5 is a cut-away view of the probe of FIG. 2 in the direction of BB';

FIG. 6 is a schematic structural diagram of another detector provided in an embodiment of the present invention;

FIG. 7 is a top view of another detector provided in accordance with an embodiment of the present invention;

fig. 8 and fig. 9 are process flow diagrams of a method for manufacturing a detector according to an embodiment of the present invention;

FIG. 10 is a schematic diagram of an apparatus according to an embodiment of the present invention;

fig. 11 is a schematic structural diagram of another apparatus according to an embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The silicon-based detector chip is widely applied to detection of high-energy particles in photon and radiation environments due to the characteristics of high response speed, high sensitivity, easiness in integration and the like. The application range of the method mainly comprises aerospace, scientific research, deep space exploration, high-energy physics, biomedicine (diagnosis before damage, bioenergy and targeted medicine), military, industrial fields (X-ray characteristic energy spectrum analyzer and industrial flaw detection), nuclear radiation monitoring and the like. Typical radiation environment applications are high-energy physical experiments, such as the ATLAS and CMS detectors in Large Hadron Collider (LHC) devices.

At present, in the detection of X-rays, because of the penetrability of X-rays, it is always desired to find a thicker pure silicon substrate and a higher detection efficiency, and in the design of reducing the dead space, there are inventions such as a three-dimensional open-and-close type box/shell type electrode detector. However, the open-close type electrode affects the electric field distribution of the active area of the detector, thereby affecting the drift and collection of carriers, and reducing the detection efficiency of the detector.

Therefore, the technical scheme of the invention provides the detector, the manufacturing method and the device thereof, the detector penetrates through the whole silicon body through the double-sided etching process, the proportion of dead zones can be reduced, and particles can enter from two sides when the detector works, so that the detection efficiency is high, and the response is sensitive.

In order to make the aforementioned objects, features and advantages of the present application more comprehensible, the present application is described in further detail with reference to the accompanying drawings and the detailed description.

Referring to fig. 1 to 5, fig. 1 is a schematic structural diagram of a probe according to an embodiment of the present invention, fig. 2 is a top view of the probe according to the embodiment of the present invention, fig. 3 is a side view of the probe according to the embodiment of the present invention, fig. 4 is a cross-sectional view of the probe shown in fig. 2 in a direction AA ', and fig. 5 is a cross-sectional view of the probe shown in fig. 2 in a direction BB'.

As shown in fig. 1 to 5, the detector includes:

a first detector cell 10 and a second detector cell 20 disposed opposite to each other in a first direction;

the first detector unit 10 comprises: a first columnar electrode 11 extending in the first direction; a first dielectric region 12 surrounding the first columnar electrode 11; a first polygonal electrode 13 surrounding said first dielectric region 12;

the second detector unit 20 comprises: a second columnar electrode 21 extending in the first direction; a second dielectric region 22 surrounding the second columnar electrode 21; a second polygonal electrode 23 surrounding said second dielectric region 22;

the first columnar electrode 11 and the second columnar electrode 21 are two parts of the same column opposite to each other in the first direction;

in the first direction, the outer side wall of the second polygonal electrode 23 does not exceed the area surrounded by the outer side wall of the first polygonal electrode 13, and at least part of the outer side wall of the second polygonal electrode 23 coincides with the outer side wall of the first polygonal electrode 13.

Further, the surfaces of the second polygonal electrode 23 and the second cylindrical electrode 21 facing away from the first detector unit 10 are covered with an electrode contact layer (not shown in the figure), which may be an aluminum electrode contact layer; the surface of the second dielectric region 22 facing away from the first detector unit 10 is also covered with an insulating layer (not shown), which may be a silicon dioxide insulating layer. Wherein, the thickness of the electrode contact layer and the insulating layer can be both 1 um.

Compared with the traditional three-dimensional groove electrode detector, the detector structure design capable of performing double-sided through etching not only can enable the electric potential and electric field of the detector to be distributed more uniformly in structural optimization, but also can eliminate a low electric field area, and improve the detection efficiency and the charge collection efficiency of each detector unit. When the structure is applied to a detector array, the efficiency of the detector can be improved to a greater extent, and meanwhile, the electrode with the structure can be obtained through a double-sided through etching process, so that the sensitivity of the detector is changed from single-sided sensitivity to double-sided sensitivity, particles can be incident from double sides, the reaction is more sensitive, and the detection efficiency is higher.

In the embodiment of the present invention, in order to reduce the proportion of the dead zone to a greater extent, the shapes of the first detector unit 10 and the second detector unit 20 may be designed to be the same or different, and may be set according to requirements.

In one mode, the first polygonal electrode 13 may be a regular n-polygon, where n is a positive integer greater than 2; the second polygonal electrode 23 may be a regular m-polygon, where m is 2 n; the regular m-polygon is an inscribed polygon of the regular n-polygon. For example, in the embodiment shown in fig. 1 to 5, the first polygonal electrode 13 is a regular quadrangle, and the second polygonal electrode 23 is a regular octagon. In practical applications, the first polygonal electrode 13 may be a regular triangle, and the second polygonal electrode 23 may be a regular hexagon, or the first polygonal electrode 13 may be a regular hexagon and the second polygonal electrode 23 is a regular dodecagon. The setting can be based on the requirement, and is not limited to the mode described in the application.

In this manner, the sum of the thicknesses of the first detector cell 10 and the second detector cell 20 may be 200um to 700 um. According to the depth limit 50 of the depth-to-width ratio of the existing deep etching process: 1, i.e., the thicker the better. For example, the sum of the thicknesses of the first detector cell 10 and the second detector cell 20 may be 700 um. It should be noted that the thickness of the second detector unit 20 is smaller than the thickness of the first detector unit 10, and the smaller the thickness is, the better the universal retention is about 10%, that is, the thickness of the second detector unit 20 is not greater than 10% of the sum of the thicknesses of the first detector unit 10 and the second detector unit 20.

In another mode, the first polygonal electrode 13 and the second polygonal electrode 23 have the same shape, and both of them may be a regular n-polygon, where n is a positive integer greater than 2; wherein the outer sidewall of the first polygonal electrode 13 completely coincides with the outer sidewall of the second polygonal electrode 23. As shown in fig. 6 and 7, fig. 6 is a schematic structural diagram of another detector provided in an embodiment of the present invention, and fig. 7 is a top view of another detector provided in an embodiment of the present invention, in this way, the first polygonal electrode 13 and the second polygonal electrode 23 have the same shape, and both are a regular quadrangle. In practical applications, the first polygonal electrode 13 and the second polygonal electrode 23 may be regular triangles. The setting can be based on the requirement, and is not limited to the mode described in the application.

In this manner, the sum of the thicknesses of the first detector unit 10 and the second detector unit 20 may be 200um to 700um, for example, may be 500 um. In this way, the first detector unit 10 and the second detector unit 20 are designed in the same shape, the detection efficiency of 100% can be realized on the unit design by the shape, no dead zone exists, and the thickness ratio of the first detector unit 10 and the second detector unit 20 can be adjusted at will by using the double-sided etching process.

In the above two modes, the first pillar-shaped electrode 11 and the second pillar-shaped electrode 21 are two parts of the same pillar opposite to each other in the first direction, and both of them may be cylindrical or regular polygon. For example, in the embodiment of the present invention, the first pillar electrode 11 and the second pillar electrode 21 are both square.

Note that the widths of the first polygonal electrode 13 and the second polygonal electrode 23 are the same, and the widths of the first columnar electrode 11 and the second columnar electrode 21 are the same; the widths of the first polygonal electrode 13 and the first columnar electrode 11 may be the same or different, and the widths of the second polygonal electrode 23 and the second columnar electrode 21 may be the same or different, and may be set as needed.

In this embodiment of the present invention, each of the first detector unit 10 and the second detector unit 20 may be a PIN junction: p-type semiconductor-junction edge layer-N-type semiconductor. Wherein the resistivity of the heavily doped P/N type semiconductor silicon is different from the resistivity of the lightly doped P/N type semiconductor silicon.

The first polygonal electrode 13 and the second polygonal electrode 23 are heavily doped with P-type silicon, the first columnar electrode 11 and the second columnar electrode 21 are heavily doped with N-type silicon, and the first dielectric region 12 and the second dielectric region 22 are lightly doped with N-type silicon;

or, the first polygonal electrode 13 and the second polygonal electrode 23 are heavily doped with N-type silicon, the first columnar electrode 11 and the second columnar electrode 21 are heavily doped with P-type silicon, and the first dielectric region 12 and the second dielectric region 22 are lightly doped with P-type silicon;

or the first polygonal electrode 13 and the second polygonal electrode 23 are heavily doped with N-type silicon, the first columnar electrode 11 and the second columnar electrode 21 are heavily doped with P-type silicon, and the first dielectric region 12 and the second dielectric region 22 are lightly doped with N-type silicon;

or, the first polygonal electrode 13 and the second polygonal electrode 23 are heavily doped with P-type silicon, the first columnar electrode 11 and the second columnar electrode 21 are heavily doped with N-type silicon, and the first dielectric region 12 and the second dielectric region 22 are lightly doped with P-type silicon.

It should be noted that, P ion implantation is required around each N-type heavy doping to solve the problems of surface defects and non-uniform electric field distribution.

Further, the material of the first dielectric region 12 may be silicon, silicon oxide, Ge, GaN, SiC, HgI₂、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI₂Or a combination of one or more of AlSb;

the material of the second dielectric region 22 can adopt silicon, silicon oxide, Ge, GaN, SiC, HgI₂、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI₂Or a combination of one or more of AlSb.

According to the above description, in the detector provided by the technical scheme of the invention, the proportion of dead zones can be reduced by penetrating through the whole silicon body through the double-sided etching process, and when the detector works, particles can enter from two sides, so that the detection efficiency is high, and the response is sensitive.

Based on the above embodiments, another embodiment of the present invention further provides a method for manufacturing a detector, as shown in fig. 8, fig. 9 and fig. 1, and fig. 8 and fig. 9 are process flow diagrams of a method for manufacturing a detector according to an embodiment of the present invention. The manufacturing method comprises the following steps:

step S11: as shown in fig. 8 and 9, a semiconductor body is provided, the semiconductor body having a first portion 01 and a second portion 02 opposite in a first direction;

in the embodiment of the present invention, a semiconductor substrate is first provided, and then, as shown in fig. 8, the semiconductor substrate is etched to form a regular quadrangle with the same shape in the first direction, and then, based on the first portion 01, four corners of the second portion 02 beyond the first portion 01 are removed, and the semiconductor substrate is formed as shown in fig. 9.

The shapes of the first part 01 and the second part 02 may be set according to requirements, for example, the first part 01 may be a regular n-polygon, and n is a positive integer greater than 2; the second portion 02 may be a regular m-sided polygon, with m ═ 2 n; the regular m-polygon is an inscribed polygon of the regular n-polygon. Or, the first part 01 and the second part 02 have the same shape, and both can be regular n-sided polygons, wherein n is a positive integer greater than 2; wherein the outer side wall of the first part 01 completely coincides with the outer side wall of the second part 02.

Step S12: as shown in fig. 1, a first detector cell 10 is formed in the first portion 01, and a second detector cell 20 is formed in the second portion 02;

wherein the first detector unit 10 comprises: a first columnar electrode 11 extending in the first direction; a first dielectric region 12 surrounding the first columnar electrode 11; a first polygonal electrode 13 surrounding said first dielectric region 12;

the second detector unit 20 comprises: a second columnar electrode 21 extending in the first direction; a second dielectric region 22 surrounding the second columnar electrode 21; a second polygonal electrode 23 surrounding said second dielectric region 22;

the first columnar electrode 11 and the second columnar electrode 21 are two parts of the same column opposite to each other in the first direction;

in the first direction, the outer side wall of the second polygonal electrode 23 does not exceed the area surrounded by the outer side wall of the first polygonal electrode 13, and at least part of the outer side wall of the second polygonal electrode 23 coincides with the outer side wall of the first polygonal electrode 13.

Further, after the formation of the first detector cell 10 and the second detector cell 20 is finished, an electrode contact layer is disposed on the surface of the second polygonal electrode 23 and the second cylindrical electrode 21 facing away from the first detector cell 10, and the electrode contact layer may be an aluminum electrode contact layer; an insulating layer, which may be a silicon dioxide insulating layer, is provided on the surface of the second dielectric region 22 facing away from the first detector unit 10.

In the embodiment of the present invention, the first polygonal electrode 13, the first columnar electrode 11, the second polygonal electrode 23, and the second columnar electrode 21 are all formed by through etching and ion diffusion doping, for example, they can be fabricated by deep reactive ion etching.

Compared with the prior art, the double-sided etching technology is adopted, the double-sided etching technology penetrates through the whole silicon body, the potential and the electric field of the detector can be distributed more uniformly in structural optimization, the low electric field area can be eliminated, the detection efficiency and the charge collection efficiency of each detector unit are improved, the proportion of dead zones can be reduced, particles can enter from two sides when the detector works, the detection efficiency is high, and the reaction is sensitive.

Based on the above embodiments, another embodiment of the present invention further provides a device, as shown in fig. 10 and fig. 11, fig. 10 is a schematic structural diagram of a device provided in an embodiment of the present invention, and fig. 11 is a schematic structural diagram of another device provided in an embodiment of the present invention. The device comprises: a plurality of detectors 50 as described in the previous embodiment, the detectors 50 being arranged in an array.

In the version shown in FIG. 10, the apparatus is an array of 2X 4 detectors 50 as shown in FIG. 1, and 30 is the remaining non-sensitive area, i.e., dead zone, on the wafer after the detectors 50 are arrayed. The array formed by the detector designed by the scheme of the invention has smaller dead zone area, and the shape design of the upper unit and the lower unit ensures that the space arrangement utilization rate is better.

The calculation mode of the array dead zone proportion is as follows:

where r is the 1/2 width of the first dielectric region 12 or the second dielectric region 22, d is the thickness of the detector 50, w is the width of the first polygonal electrode 13 or the second polygonal electrode 23, r₀Is the width of the first columnar electrode 11 or the second columnar electrode 21. When r is₀Compared with the case where w is small enough, the dead band ratio is only 1/180, which is reduced to 1/18 before compared with the dead band ratio of 1/10.

In the mode shown in fig. 11, the apparatus is an array consisting of 2 × 4 detectors 50 shown in fig. 6, and the array can achieve 100% detection efficiency, no dead zone exists, and the spatial arrangement utilization rate is the best.

According to the above description, the detector structure design capable of double-sided through etching can not only make the potential and electric field distribution of the detector more uniform from the structural optimization, but also eliminate the low electric field area, and improve the detection efficiency and charge collection efficiency of each detector unit. When the structure is applied to a detector array, the efficiency of the detector can be improved to a greater extent, and meanwhile, the electrode with the structure can be obtained through a double-sided through etching process, so that the sensitivity of the detector is changed from single-sided sensitivity to double-sided sensitivity, particles can be incident from double sides, the reaction is more sensitive, and the detection efficiency is higher.

The embodiments in the present description are described in a progressive manner, or in a parallel manner, or in a combination of a progressive manner and a parallel manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments can be referred to each other. The manufacturing method and the device disclosed by the embodiment correspond to the detector disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the partial description of the detector.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in an article or device that comprises the element.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.