阅读说明：本技术 针对存储器设备的芯片选择信号读取操作的训练 (Training for chip select signal read operations for memory devices ) 是由 邬正龙 托尼亚·G·莫里斯 克里斯蒂娜·爵 丹尼尔·贝塞拉·佩雷斯 大卫·G·埃利斯 于 2019-05-24 设计创作，主要内容包括：可基于存储器设备所接收的CS信号的采样样本来确定向存储器设备提供的参考电压值和芯片选择(CS)信号时间延迟。可以针对各种参考电压以不同的时间延迟向存储器设备提供CS信号。来自存储器设备的CS信号的各种采样样本可指示CS信号的上升沿和下降沿的不同时间。可由CS信号的最迟出现的上升沿和最早出现的下降沿来生成复合信号眼。可基于与参考眼宽最接近的复合信号眼宽来选择参考电压值和时间延迟。(The reference voltage value and Chip Select (CS) signal time delay provided to the memory device may be determined based on sampled samples of a CS signal received by the memory device. The CS signal may be provided to the memory device with different time delays for various reference voltages. Various sampled samples of the CS signal from the memory device may indicate different times of rising and falling edges of the CS signal. The composite signal eye may be generated from the latest occurring rising edge and the earliest occurring falling edge of the CS signal. The reference voltage value and the time delay may be selected based on a composite signal eye width that is closest to the reference eye width.)