阅读说明：本技术 一种热界面材料及包含其的电子器件 (Thermal interface material and electronic device comprising same ) 是由 华菲 米娜·雅玛 于 2021-09-02 设计创作，主要内容包括：本发明提供了一种热界面材料及包含其的电子器件,所述热界面材料包括相变合金材料,所述热界面材料具有固相线温度和液相线温度,所述液相线温度高于所述固相线温度,所述固相线温度低于电子器件正常工作温度。电子器件正常工作开始时,所述热界面材料向液相转变,使得发热器件与散热器件之间不存在空气间隙,导热性能优异；而且,所述热界面材料的结构简单,使用方便,进一步降低了电子器件的制造成本。(The invention provides a thermal interface material and an electronic device comprising the same, wherein the thermal interface material comprises a phase-change alloy material, the thermal interface material has a solidus temperature and a liquidus temperature, the liquidus temperature is higher than the solidus temperature, and the solidus temperature is lower than the normal working temperature of the electronic device. When the electronic device starts to work normally, the thermal interface material is converted to liquid phase, so that no air gap exists between the heating device and the heat dissipation device, and the heat conduction performance is excellent; moreover, the thermal interface material is simple in structure and convenient to use, and the manufacturing cost of the electronic device is further reduced.)

1. A thermal interface material, wherein the thermal interface material comprises a phase change alloy material;

the thermal interface material has a solidus temperature and a liquidus temperature, the liquidus temperature being higher than the solidus temperature, the solidus temperature being lower than a normal operating temperature of the electronic device.

2. The thermal interface material of claim 1, wherein the liquidus temperature is higher than the normal operating temperature of an electronic device.

3. A thermal interface material as defined in claim 1, wherein said solidus temperature is greater than room temperature.

4. The thermal interface material of claim 1, wherein the phase change alloy material is an alloy of at least two of indium, tin, or bismuth.

5. The thermal interface material of claim 4, wherein the phase change alloy material is an indium tin bismuth alloy;

the indium-tin-bismuth alloy comprises, by mass, 43-70 wt% of indium, 10.33-35 wt% of tin and 19.67-32 wt% of bismuth.

6. A thermal interface material as defined in any one of claims 1-5, wherein said thermal interface material comprises, in mass percent, 5 wt.% or less of a dopant material.

7. A thermal interface material as claimed in claim 6, wherein the dopant material comprises any one or a combination of at least two of Ni, Sb, Ce, Zn, Cu, Ge, Ga, Ti, Rb, Ag, Co or Cr.

8. A thermal interface material as claimed in claim 1 or 6, characterized in that it comprises, in mass percent, 10% by weight or less of a thermally conductive filler.

9. The thermal interface material of claim 8, wherein the thermally conductive filler comprises SiC particles, AlN particles, Al₂O₃Any one of particles or BN particles or a combination of at least two thereof.

10. An electronic device comprising a first electronic component, a second electronic component, and a thermal interface material disposed between the first electronic component and the second electronic component;

the thermal interface material is the thermal interface material of any one of claims 1-9;

preferably, the first electronic component is a semiconductor chip and the second electronic component is a heat spreader;

or, the first electronic component is a semiconductor chip and the second electronic component is a heat sink;

or, the first electronic component is a soaking device, and the second electronic component is a heat radiator.

Technical Field

The invention belongs to the technical field of semiconductors, relates to a heat conduction material, and particularly relates to a thermal interface material and an electronic device comprising the same.

Background

With the rapid development of modern electronic technology, the integration degree and the assembly density of electronic components are continuously improved, and the working power consumption and the heat productivity of the electronic components are increased sharply while providing strong use functions. High temperatures can have a detrimental effect on the stability, reliability and lifetime of the electronic device. Therefore, ensuring that the heat generated by the heat-generating electronic components can be discharged in time has become an important aspect of the system assembly of microelectronic products. Therefore, thermal interface materials have become an important subject of research for heat dissipation of electronic devices.

The metal thermal interface material is a commonly used thermal interface material, and comprises a pure metal thermal interface material and an indium foil, however, the pure metal thermal interface material and the indium foil have the following defects: (1) when the pure metal thermal interface material is used, the pure metal thermal interface material needs to be melted and then used, and the possibility of overflow caused by repeated solidification and melting of metal exists in the using process, so that the dangers of short circuit of electronic components and the like are caused; meanwhile, the solid-liquid phase change volume change in the use process can damage the heating element. (2) Indium foil has a high melting point and is solid in the use process, so that the indium foil cannot well fill air gaps between electronic components, contact thermal resistance is high, and heat conduction efficiency is low.

When the metal thermal interface material disclosed in CN 104218010a is used, it is necessary to place the thermal interface material between a heat source and a heat sink, and when the temperature is raised to the melting point of the low-melting-point metal, the upper and lower low-melting-point metal layers melt, so as to realize excellent thermal contact between the heat source and the heat sink. The low-melting-point metal is melted and then is melted with the middle indium foil layer to form an alloy, and the melting point of the alloy is higher than that of the low-melting-point metal. At this time, the thermal interface material is tightly fixed on the heat transfer interface; and in subsequent use, the thermal interface material is always solid and cannot be melted to overflow. However, when the solid thermal interface material is used in an environment with large temperature fluctuation, defects such as strain cracks are easy to occur, and thus the heat conduction effect of the thermal interface material is reduced along with the prolonging of the service time.

CN 101803010a discloses a thermal interface material, an electronic device comprising the thermal interface material and methods for making and using the same. The thermal interface material includes a thermally conductive metal, and coarse polymer particles in the thermally conductive metal; wherein the thermally conductive metal has a melting point above a standard operating temperature of the electronic device and below a fabrication temperature of the electronic device. When the thermal interface material is arranged, the temperature needs to be heated to a temperature higher than the melting point of the heat conductive metal so as to melt the heat conductive metal, and the use is complicated. When the thermal interface material is used, the thermal interface material is in a solid state, the stability of heat conduction between the first electronic component and the second electronic component is poor, and the defects such as cracks and the like are easy to appear even after the thermal interface material is used for a long time, so that the heat conduction effect of the thermal interface material is reduced along with the prolonging of the service time.

In view of the above, it is desirable to provide a thermal interface material that facilitates industrial assembly and is capable of stably conducting heat for a long time, and an electronic device including the same.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide a thermal interface material and an electronic device comprising the same, wherein the thermal interface material does not have the defect that a solid heat conduction material is cracked after being used for a long time; moreover, the thermal interface can be directly arranged between the heating device and the heat dissipation device when in use, and the thermal interface is not required to be arranged after being heated and melted, so that the assembly process is simplified, and the efficiency of industrial production is improved.

In order to achieve the purpose, the invention adopts the following technical scheme:

in a first aspect, the present disclosure provides a thermal interface material comprising a phase change alloy material;

the thermal interface material has a solidus temperature and a liquidus temperature, the liquidus temperature being higher than the solidus temperature, the solidus temperature being lower than a normal operating temperature of the electronic device.

The solidus temperature is the temperature at which the thermal interface material begins to form a solid when cooled; the liquidus temperature is the temperature at which the thermal interface material begins to form a liquid when heated.

In the thermal interface material provided by the invention, the solidus temperature is lower than the normal working temperature of an electronic device. The thermal interface material is at least partially in a liquid state during normal operation of the electronic device. Compared with solid alloys, the liquid alloys have better heat conduction efficiency, and the liquid heat conduction alloys can fully infiltrate the surface, so that the heat conduction efficiency is further ensured from the angle of improving the heat conduction area; meanwhile, when the electronic device works normally, at least part of the thermal interface material is in a liquid state, so that the defect of cracking of the solid heat-conducting medium during long-term use can be avoided.

It will be appreciated that the normal operating temperatures of different electronic devices may be different. In some embodiments of the invention, the normal operating temperature of the electronic device is 60-90 deg.C, such as 60 deg.C, 65 deg.C, 70 deg.C, 75 deg.C, 80 deg.C, 85 deg.C, or 90 deg.C, in other embodiments of the invention, the normal operating temperature of the electronic device is 70-130 deg.C, such as 70 deg.C, 80 deg.C, 90 deg.C, 100 deg.C, 110 deg.C, 120 deg.C, or 130 deg.C, but not limited to the recited values, and other values within the range of values are equally applicable.

Preferably, the liquidus temperature of the thermal interface material is higher than the normal operating temperature of the electronic device.

When the liquidus temperature of the thermal interface material is higher than the normal working temperature of the electronic device, the thermal interface material has both solid phase and liquid phase, which is similar to paste, when the electronic device works normally, so that the thermal interface material is ensured not to overflow when in use, and the operation safety of the electronic device is ensured.

Preferably, the thermal interface material has a solidus temperature greater than room temperature.

When the solidus temperature of the thermal interface material is higher than the room temperature, that is, the thermal interface material is in a solid state at the room temperature, so that the thermal interface material is easy to transport and store and is more convenient to operate.

Preferably, the phase change alloy material is an alloy composed of at least two of indium, tin or bismuth, such as an indium tin alloy, a tin bismuth alloy or an indium tin bismuth alloy, but not limited to the above list, and other alloys not listed in the protection scope are also applicable.

Preferably, the phase change alloy material is an indium tin bismuth alloy.

Preferably, the indium-tin-bismuth alloy comprises, by mass, 43-70 wt% of indium, 10.33-35 wt% of tin and 19.67-32 wt% of bismuth; and does not simultaneously satisfy the conditions that the indium accounts for 51.2 wt%, the tin accounts for 16.8 wt% and the bismuth accounts for 32 wt%.

When the alloy simultaneously satisfies that indium is 51.2 wt%, tin is 16.8 wt% and bismuth is 32 wt%, the alloy of indium, tin and bismuth is in a eutectic state, and the requirements of solidus temperature and liquidus temperature in the invention cannot be met.

Specifically, 51.2 wt% < In ≦ 70 wt% In the indium-tin-bismuth alloy, for example, 52 wt%, 55 wt%, 60 wt%, 65 wt%, or 70 wt%, but not limited to the values listed, and other values not listed In the range of values are also applicable; 10.33% by weight or less Sn < 16.8% by weight, and may be, for example, 10.33%, 11%, 12%, 13%, 14%, 15% or 16% by weight, but is not limited to the values recited, and other values not recited in the numerical ranges are equally applicable; 19.67 wt.% Bi <32 wt.%, for example 19.67 wt.%, 21 wt.%, 22 wt.%, 23 wt.%, 24 wt.%, 25 wt.%, 27 wt.%, 28 wt.%, 30 wt.% or 31 wt.%, but not limited to the values recited, and other values not recited within the range of values are equally applicable.

Alternatively, 43% by weight or less In < 51.2% by weight, and may be, for example, 43%, 45%, 48%, 50% or 51% by weight, but is not limited to the values recited, and other values not recited In the range of values are equally applicable; 16.8 wt% < Sn ≦ 35 wt%, which may be, for example, 17 wt%, 18 wt%, 20 wt%, 24 wt%, 25 wt%, 28 wt%, 30 wt%, or 35 wt%, but is not limited to the recited values, and other values not recited within the range of values are equally applicable; 22 ≦ Bi <32 wt%, for example 22 wt%, 24 wt%, 25 wt%, 27 wt%, 30 wt% or 31 wt%, but not limited to the values recited, other values not recited in the numerical range are equally applicable.

In the present invention, the inventors have found that when the contents of indium, tin and bismuth in the indium-tin-bismuth alloy are in the above ranges, the thermal interface material is not only like a paste when the electronic device is in normal operation, but also has excellent thermal conductivity.

Preferably, the thermal interface material includes 5 wt% or less of the dopant material, such as 1 wt%, 2 wt%, 3 wt%, 4 wt%, or 5 wt%, by mass percent, but not limited to the recited values, and other values not recited within the range of values are equally applicable.

When the doped material is added to the thermal interface material, the doped material needs to be less than or equal to 5 wt%, and if the addition amount of the doped material is greater than 5 wt%, the thermal conductivity of the thermal interface material is deteriorated.

Preferably, the doping material comprises any one or a combination of at least two of Ni, Sb, Ce, Zn, Cu, Ge, Ga, Ti, Rb, Ag, Co or Cr; typical but non-limiting combinations include combinations of Ni and Sb, Sb and Ce, Ce and Zn, Zn and Cu, Cu and Ge, Ge and Ti, Ga and Cu, Ti and Rb, Rb and Ag, Ag and Co, Co and Cr, Ni, Sb and Ce, Zn and Cu, Rb, Ag, Co and Cr, Sb, Ce, Zn, Cu and Ge, Cu, Ge, Ti, Rb, Ag and Cr, or Ni, Sb, Ce, Zn, Cu, Ge, Ga, Ti, Rb, Ag, Co and Cr.

The addition of the doped material can not only increase the heat conduction performance of the thermal interface material, but also increase the stability of heat conduction. In the practical application process, the heat conducting material arranged between the heating device and the heat dissipation device can generate interface reaction with the electronic components on two sides, and the generated intermetallic compound can reduce the heat conducting property of the material. Moreover, the addition of the doped material can also improve the oxidation resistance of the thermal interface material, slow down the oxidation speed of the thermal interface material and further improve the stability of the thermal interface material.

Preferably, the thermal interface material includes 10 wt% or less of a thermally conductive filler, such as 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, 6 wt%, 7 wt%, 8 wt%, 9 wt%, or 10 wt%, in mass percent, but not limited to the recited values, and other values not recited within the range are equally applicable.

When the heat-conducting filler is added into the thermal interface material, the heat-conducting filler needs to be less than or equal to 10 wt%, and if the addition amount of the heat-conducting filler is greater than 10 wt%, the viscosity of the material is too high, the material cannot be uniformly coated, and the heat-conducting performance of the material is influenced.

Preferably, the thermally conductive filler includes SiC particles, AlN particles, Al₂O₃Any one of particles or BN particles or a combination of at least two thereof; typical, but non-limiting combinations include combinations of SiC particles with AlN particles, AlN particles with Al₂O₃The combination of the particles is such that,Al₂O₃combination of particles with BN particles, SiC particles with Al₂O₃Combination of particles, AlN particles, Al₂O₃Combination of particles with BN particles, or SiC particles, AlN particles, Al₂O₃A combination of particles with BN particles.

The addition of the heat-conducting filler can not only improve the heat-conducting property, but also increase the viscosity of the thermal interface material at the normal working temperature of the electronic device, thereby preventing the thermal interface material from overflowing in the actual use process.

In a second aspect, the present invention provides an electronic device comprising a first electronic component, a second electronic component, and a thermal interface material disposed between the first electronic component and the second electronic component.

The thermal interface material is the thermal interface material of the first aspect.

Preferably, the first electronic component is a semiconductor chip and the second electronic component is a heat spreader.

That is, the thermal interface material according to the first aspect of the present invention may be used for TIM1.

Preferably, the first electronic component is a semiconductor chip and the second electronic component is a heat sink.

That is, the thermal interface material according to the first aspect of the present invention may be used for TIM 1.5.

Preferably, the first electronic component is a heat spreader and the second electronic component is a heat sink.

That is, the thermal interface material according to the first aspect of the present invention may be used for TIM 2.

When the thermal interface material provided by the invention is applied, the thermal interface material can be directly arranged between the first electronic component and the second electronic component without melting and then arranging. The thermal interface material can be directly arranged between the first electronic component and the second electronic component during assembly, can directly utilize the heat generated by the heating device to at least partially melt, and then conducts heat in the state, thereby simplifying the application process and being beneficial to improving the efficiency of industrial production.

The recitation of numerical ranges herein includes not only the above-recited numerical values, but also any numerical values between non-recited numerical ranges, and is not intended to be exhaustive or to limit the invention to the precise numerical values encompassed within the range for brevity and clarity.

Compared with the prior art, the invention has the beneficial effects that:

(1) in the thermal interface material provided by the invention, the solidus temperature is lower than the normal working temperature of an electronic device; when the electronic device normally works, at least part of the thermal interface material is in a liquid state; compared with solid alloys, the liquid alloys have better heat conduction efficiency, and the liquid heat conduction alloys can fully infiltrate the surface, so that the heat conduction efficiency is further ensured from the angle of improving the heat conduction area; meanwhile, when the electronic device works normally, at least part of the thermal interface material is in a liquid state, so that the defect of cracking of the solid heat-conducting medium during long-term use can be avoided;

(2) the liquidus temperature of the thermal interface material is higher than the normal working temperature of the electronic device, so that the thermal interface material has both a solid phase and a liquid phase which are similar to paste when the electronic device works normally, the thermal interface material is ensured not to overflow when in use, and the operation safety of the electronic device is ensured;

(3) the invention ensures that the solidus temperature of the thermal interface material is higher than the room temperature, namely, the thermal interface material is in a solid state at the room temperature, so that the thermal interface material is easy to transport and store and is more convenient to operate;

(4) the addition of the doping material can not only increase the heat conduction performance of the thermal interface material, but also increase the heat conduction stability; in the practical application process, the heat conducting material arranged between the heating device and the heat dissipation device can generate interface reaction with the electronic components on two sides, and the generated intermetallic compound can reduce the heat conducting property of the material. Moreover, the addition of the doped material can also improve the oxidation resistance of the thermal interface material, slow down the oxidation speed of the thermal interface material and further improve the stability of the thermal interface material;

(5) the heat-conducting filler is added, so that the heat-conducting performance can be improved, and the viscosity of the heat-conducting metal material at the normal working temperature of an electronic device can be increased, so that the overflow of the heat-conducting metal material in the actual use process is prevented;

(6) when the thermal interface material is used for an electronic device, the thermal interface material can be directly arranged between the first electronic component and the second electronic component during assembly, at least partial melting can be directly realized by using heat generated by a heating device, and then heat conduction is carried out in the state, so that the application process is simplified, and the efficiency of industrial production is improved.

Detailed Description

The technical solution of the present invention is further explained by the following embodiments. The test method involved in the specific embodiment comprises an oxidation resistance test, an interface reaction inhibition test and a judgment of whether overflow exists.

The method for testing the oxidation resistance comprises the following steps: sealing the obtained thermal interface material between two glass sheets, heating to 150 ℃, keeping the temperature for 100h, 300h and 1000h, respectively observing the color change and measuring the thermal conductivity. Sealing the obtained thermal interface material between two glass sheets, heating to 55 ℃ under the humidity condition of 85% R.H, preserving heat for 100h, 300h and 600h, respectively observing color change and measuring thermal conductivity.

The method for testing the performance of inhibiting the interface reaction comprises the following steps: placing the obtained thermal interface material on a copper wire, heating to 300 ℃, 350 ℃ and 400 ℃, respectively preserving heat for 24 hours and 48 hours at each temperature, and then respectively measuring the diameters of the rest copper wires to obtain the dissolution amount of copper, so as to obtain the dissolution rate of copper;

the method for judging whether the overflow exists comprises the following steps: the thermal interface material is placed between two copper sheets, then heated to 80 ℃, 100 ℃ and 130 ℃, and the thickness of the thermal interface material before and after heating is measured respectively, wherein no change in thickness means no overflow.

Example 1

The present embodiments provide a thermal interface material that includes a phase change alloy material.

The phase change alloy material is indium tin bismuth alloy; in the indium-tin-bismuth alloy, the mass percent of indium is 70 wt%, the mass percent of tin is 10.33 wt%, and the mass percent of bismuth is 19.67 wt%.

The liquidus temperature of the thermal interface material obtained in the embodiment is higher than the normal working temperature of the electronic device, and the solidus temperature is lower than the normal working temperature of the electronic device.

Example 2

The present embodiments provide a thermal interface material that includes a phase change alloy material.

The phase change alloy material is indium tin bismuth alloy; in the indium-tin-bismuth alloy, the mass percent of indium is 43 wt%, the mass percent of tin is 35 wt%, and the mass percent of bismuth is 22 wt%.

The liquidus temperature of the thermal interface material obtained in the embodiment is higher than the normal working temperature of the electronic device, and the solidus temperature is lower than the normal working temperature of the electronic device.

Example 3

The embodiment provides a thermal interface material, which comprises a phase change alloy material and a doping material.

The phase change alloy material is indium tin bismuth alloy; the proportions of indium, tin and bismuth in the indium-tin-bismuth alloy are the same as in example 1; the thermal interface material comprises 3 wt% of doping materials such as Sb, Zn, Cu, Ge, Ga, Ag and the like in percentage by mass.

The liquidus temperature of the thermal interface material obtained in the embodiment is higher than the normal working temperature of the electronic device, and the solidus temperature is lower than the normal working temperature of the electronic device.

Compared with the embodiment 1, the embodiment has the advantages that by adding the doping material, no obvious color change exists in an oxidation resistance test experiment, and the heat conductivity coefficient is not obviously reduced; in the performance test of inhibiting the interface reaction, the dissolution rate of copper is slower, and the interface reaction is effectively inhibited.

Example 4

The embodiment provides a thermal interface material, which comprises a phase change alloy material and a heat conducting filler.

The phase change alloy material is indium tin bismuth alloy; the proportions of indium, tin and bismuth in the indium-tin-bismuth alloy are the same as in example 1; the thermal interface material comprises 5 wt% of heat-conducting filler such as SiC, AlN and Al₂O₃BN, etc.

The liquidus temperature of the thermal interface material obtained in the embodiment is higher than the normal working temperature of the electronic device, and the solidus temperature is lower than the normal working temperature of the electronic device.

In the embodiment, the thickness of the heat-conducting metal material does not change obviously before and after heating in the overflow test, which shows that the heat-conducting metal material can not only improve the heat-conducting property but also increase the viscosity of the heat-conducting metal material at the normal working temperature of the electronic device by adding the heat-conducting filler, so that the overflow of the heat-conducting metal material in the actual use process is prevented.

Example 5

The embodiment provides a thermal interface material, which comprises a phase change alloy material, a doping material and a heat-conducting filler.

The phase change alloy material is indium tin bismuth alloy, and the proportion of indium, tin and bismuth in the indium tin bismuth alloy is the same as that in the embodiment 1; the thermal interface material comprises 1 wt% of doping materials such as Sb, Zn, Cu, Ge, Ga, Ag and the like in percentage by mass; the thermal interface material also comprises 9 wt% of heat-conducting filler such as SiC, AlN and Al₂O₃BN, etc.

The liquidus temperature of the thermal interface material obtained in the embodiment is higher than the normal working temperature of the electronic device, and the solidus temperature is lower than the normal working temperature of the electronic device.

In the embodiment, by adding the doping material, no obvious color change exists in an oxidation resistance test experiment, and the heat conductivity coefficient is not obviously reduced; in the performance test of inhibiting the interface reaction, the dissolution rate of copper is slower, and the interface reaction is effectively inhibited.

In the embodiment, the thickness of the heat-conducting metal material does not change obviously before and after heating in the overflow test, which shows that the heat-conducting metal material can not only improve the heat-conducting property but also increase the viscosity of the heat-conducting metal material at the normal working temperature of the electronic device by adding the heat-conducting filler, so that the overflow of the heat-conducting metal material in the actual use process is prevented.

In summary, the following steps: (1) in the thermal interface material provided by the invention, the solidus temperature is lower than the normal working temperature of an electronic device; when the electronic device normally works, at least part of the thermal interface material is in a liquid state; compared with solid alloys, the liquid alloys have better heat conduction efficiency, and the liquid heat conduction alloys can fully infiltrate the surface, so that the heat conduction efficiency is further ensured from the angle of improving the heat conduction area; meanwhile, when the electronic device works normally, at least part of the thermal interface material is in a liquid state, so that the defect of cracking of the solid heat-conducting medium during long-term use can be avoided;

(2) the liquidus temperature of the thermal interface material is higher than the normal working temperature of the electronic device, so that the thermal interface material has both a solid phase and a liquid phase which are similar to paste when the electronic device works normally, the thermal interface material is ensured not to overflow when in use, and the operation safety of the electronic device is ensured;

(3) the invention ensures that the solidus temperature of the thermal interface material is higher than the room temperature, namely, the thermal interface material is in a solid state at the room temperature, so that the thermal interface material is easy to transport and store and is more convenient to operate;

(4) the addition of the doping material can not only increase the heat conduction performance of the thermal interface material, but also increase the heat conduction stability; in the practical application process, the heat conducting material arranged between the heating device and the heat dissipation device can generate interface reaction with the electronic components on two sides, and the generated intermetallic compound can reduce the heat conducting property of the material. Moreover, the addition of the doped material can also improve the oxidation resistance of the thermal interface material, slow down the oxidation speed of the thermal interface material and further improve the stability of the thermal interface material;

(5) the heat-conducting filler is added, so that the heat-conducting performance can be improved, and the viscosity of the heat-conducting metal material at the normal working temperature of an electronic device can be increased, so that the overflow of the heat-conducting metal material in the actual use process is prevented;

(6) when the thermal interface material is used for an electronic device, the thermal interface material can be directly arranged between the first electronic component and the second electronic component during assembly, at least partial melting can be directly realized by using heat generated by a heating device, and then heat conduction is carried out in the state, so that the application process is simplified, and the efficiency of industrial production is improved.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.