阅读说明：本技术 晶体掺杂装置 (Crystal doping device ) 是由 朱彦勋 施英汝 于 2020-11-23 设计创作，主要内容包括：一种晶体掺杂装置包括一罩盖、一容杯及一缓冲件,所述晶体掺杂装置是设置于一坩埚上方,所述罩盖内部具有一容置空间,且具有朝向所述坩埚方向的一开口；所述容杯设置于所述容置空间中,且用以容置一掺杂物,所述容杯底部呈锥形并具有一开孔；所述缓冲件设置于所述容置空间中且位于所述容杯下方,所述缓冲件具有一承接面及一出料部,所述承接面呈倾斜设置且位于所述开孔的正下方,所述出料部连接于所述承接面且位置低于所述承接面。借此,改善掺杂效率和避免掺杂物之熔液飞溅。(A crystal doping device comprises a cover cap, a containing cup and a buffer piece, wherein the crystal doping device is arranged above a crucible, and the cover cap is internally provided with a containing space and an opening facing the direction of the crucible; the accommodating cup is arranged in the accommodating space and is used for accommodating a dopant, and the bottom of the accommodating cup is conical and is provided with an opening; the buffer piece is arranged in the containing space and located below the containing cup, the buffer piece is provided with a bearing surface and a discharging portion, the bearing surface is obliquely arranged and located under the open hole, and the discharging portion is connected with the bearing surface and the position of the discharging portion is lower than the bearing surface. Thereby improving the doping efficiency and preventing the molten metal of the dopant from splashing.)

1. A crystal doping apparatus disposed above a crucible, comprising:

a cover cap, which is provided with an accommodating space inside and an opening facing the crucible direction;

the accommodating cup is arranged in the accommodating space and is used for accommodating a dopant, and the bottom of the accommodating cup is conical and is provided with an opening; and

the buffer piece is arranged in the containing space and positioned below the containing cup, the buffer piece is provided with a receiving surface and a discharging part, the receiving surface is obliquely arranged and positioned under the open pore, and the discharging part is connected with the receiving surface and the position of the discharging part is lower than the receiving surface.

2. The crystal doping apparatus of claim 1, wherein the cup has a central axis, the buffer has a tapered hole, a hole wall of the tapered hole forms the receiving surface, the tapered hole has a lower opening forming the discharge portion, a first reference surface is defined perpendicular to the central axis, the opening of the cup has a first projection surface projected on the first reference surface, the lower opening has a second projection surface projected on the first reference surface, and the first projection surface and the second projection surface do not intersect with each other.

3. The crystal doping apparatus of claim 2, wherein the opening has a first center point, the lower opening of the tapered hole has a second center point, and at least one of the first center point and the second center point is spaced from the central axis.

4. The crystal doping apparatus of claim 3 wherein the first center point and the center axis have a first spacing therebetween, and the second center point and the center axis have a second spacing therebetween, the first spacing being equal to the second spacing.

5. The crystal doping apparatus of claim 3 wherein the spacing is equal to or greater than 3 mm.

6. The crystal doping apparatus of claim 3 wherein the spacing is equal to or greater than 8% and equal to or less than 30% of the inside radius of the containment cup.

7. The crystal doping apparatus of claim 2, wherein a second reference plane is defined through the central axis and perpendicular to the first reference plane, the bottom of the cup and the second reference plane intersect at two first line segments, and an included angle between the first line segments is greater than or equal to 50 degrees and less than or equal to 70 degrees.

8. The crystal doping apparatus of claim 7, wherein the receiving surface of the buffer intersects the second reference surface at two second line segments, and an included angle between the second line segments is greater than or equal to 50 degrees and less than or equal to 70 degrees.

9. The crystal doping apparatus of claim 1 wherein the inner wall of the cap has two opposing slots, and the cup has two opposing lugs, the lugs of the cup being removably disposed in the slots of the cap.

10. The crystal doping apparatus of claim 9 wherein each of the slots has an upwardly facing open upper end, and each of the lugs enters each of the slots from each of the open upper ends.

11. The crystal doping apparatus of claim 1 wherein the inner wall of the cap has two slots disposed opposite to each other, the buffer member has two lugs disposed opposite to each other, and the lugs of the buffer member are detachably disposed in the slots of the cap.

12. The crystal doping apparatus of claim 11 wherein each of the slots has an upwardly facing open upper end, and each of the lugs enters each of the slots from each of the open upper ends.

13. The crystal doping apparatus of claim 1, wherein the cap has at least two first recesses oppositely disposed at a periphery of the opening, the at least two first recesses being recessed from the periphery of the opening.

14. The crystal doping apparatus of claim 13 wherein the minimum distance of the bottom of the at least two first recesses from the opening is greater than or equal to 5mm and less than or equal to 15 mm.

15. The crystal doping apparatus of claim 13, wherein the trench width of the at least two first trenches satisfies a condition of greater than or equal to 25% and less than or equal to 50% of the inner diameter of the cap.

16. The crystal doping apparatus of claim 13 wherein the cap has at least two second recesses at the periphery of the opening, the at least two second recesses being recessed from the periphery of the opening, the minimum distance of the bottom of the at least two second recesses from the opening being greater than the minimum distance of the bottom of the at least two first recesses from the opening.

17. The crystal doping apparatus of claim 16 wherein the trench width of the at least two second trenches satisfies a condition of greater than or equal to 5% and less than or equal to 10% of the inner diameter of the cap.

18. The crystal doping apparatus of claim 16 wherein the minimum distance of the bottom of the at least two second recesses from the opening is greater than or equal to 10mm and less than or equal to 20 mm.

19. The crystal doping apparatus of claim 1 wherein a minimum distance between the opening of the cover and a surface of the liquid silicon material in the crucible satisfies a condition of 10mm or less.

Technical Field

The present invention relates to a crystal doping apparatus; in particular to a crystal doping device which can improve the doping efficiency and prevent the melt from splashing.

Background

In the Czochralski (Czochralski) process, a silicon material is placed in a crucible, and after the silicon material is melted into liquid silicon at a temperature of about 1414 ℃, a silicon seed crystal having a predetermined crystal orientation is lowered to contact the surface of the liquid silicon, the liquid silicon forms a single crystal having the predetermined crystal orientation with the silicon seed crystal on the silicon seed crystal under proper temperature control, and then the silicon seed crystal and the crucible are rotated and slowly pulled to form a silicon ingot below the silicon seed crystal.

It is known that doping silicon with dopants (such as boron, phosphorus, antimony, arsenic, etc.) can change the conductivity of silicon, and the conventional doping method is to melt the solid dopants together with the solid silicon material in a quartz crucible, however, the saturation vapor pressure of dopants such as phosphorus, antimony, arsenic, etc. is very high at the temperature near the melting point of silicon, the volatilization speed is so high that only a small amount of dopants can enter the silicon crystal, the doping efficiency is very low, and if the target doping concentration is reached, a large amount of dopants must be doped.

Another doping method is to add solid or liquid dopant into the crucible after the silicon material is melted in the crucible, but this method is prone to melt splashing and dopant diffusion unevenness. Therefore, how to improve the doping efficiency and avoid the splashing of the melt during the doping process is an urgent problem to be solved.

Disclosure of Invention

Accordingly, the present invention is directed to a crystal doping apparatus to improve the doping efficiency and prevent the molten metal from splashing during the doping process.

The crystal doping device provided by the invention comprises a cover cap, a containing cup and a buffer piece, wherein the crystal doping device is arranged above a crucible, and the cover cap is internally provided with a containing space and an opening facing the direction of the crucible; the accommodating cup is arranged in the accommodating space and is used for accommodating a dopant, and the bottom of the accommodating cup is conical and is provided with an opening; the buffer piece is arranged in the containing space and located below the containing cup, the buffer piece is provided with a bearing surface and a discharging portion, the bearing surface is obliquely arranged and located under the open hole, and the discharging portion is connected with the bearing surface and the position of the discharging portion is lower than the bearing surface.

The invention has the advantages that when the solid dopant in the containing cup is heated and melted into liquid, the liquid dopant can flow out through the opening of the melting cup and fall on the bearing surface of the buffer part, then flows to the discharging part through the guide of the bearing surface which is obliquely arranged, and then enters the crucible from the discharging part, so that the problem that the existing crystal doping device directly puts the solid or liquid dopant into the liquid silicon to cause the splashing of the melt can be improved by the buffer of the bearing surface of the buffer part; in addition, the design of the cover cap of the invention can limit the heated and volatilized gaseous dopant in the cover cap, so that the gaseous dopant can also be diffused into the liquid silicon material, thereby having the effect of improving the doping efficiency.

Drawings

FIG. 1 is a schematic view of a single crystal growing apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line A-A of the crystal doping apparatus according to the preferred embodiment.

FIG. 3 is a cross-sectional view taken along the line A-A of the crystal doping apparatus according to the preferred embodiment.

Fig. 4 is a schematic diagram of the crystal doping apparatus of the above preferred embodiment projected on a first reference plane.

FIG. 5 is a schematic view of the cup, the buffer member and the second reference surface of the preferred embodiment.

FIG. 6 is a cross-sectional view of the crystal doping apparatus according to the preferred embodiment.

FIG. 7 is a schematic view of the preferred embodiment of the cap and liquid silicon level.

Fig. 8 is a sectional view taken along the line B-B in fig. 1.

FIG. 9 is a schematic view of another preferred embodiment of the cap and liquid silicon level.

FIG. 10 is a schematic view of another preferred embodiment of the cap and liquid silicon level.

Detailed Description

In order to more clearly illustrate the present invention, a preferred embodiment will be described in detail below with reference to the accompanying drawings. Referring to fig. 1 and 2, a single crystal growing apparatus 1 according to a preferred embodiment of the present invention includes a chamber 10, a crucible 20, a crystal doping device 30, and a heating module 40, wherein the crucible 20, the crystal doping device 30, and the heating module 40 are all disposed in the chamber 10, the crystal doping device 30 is disposed above the crucible 20, the heating module 40 is used to provide heat energy to the crucible 20 and the crystal doping device 30, in this embodiment, the heating module 40 maintains the cup 34 with a thermal field distribution of about 700-1000 ℃ to melt the dopant D contained in the crystal doping device 30, and maintains the crucible 20 at about 1414 ℃ to melt the silicon material into a liquid state.

As shown in fig. 2, the crystal doping apparatus 30 includes a cap 32, a cup 34 and a buffer 36, wherein the cover 32, the cup 34 and the buffer 36 are made of high temperature resistant materials such as quartz or ceramics which can resist heat above 1500 degrees and does not have pollutants precipitated, but not limited to the above materials, the cover cap 32 has a receiving space S therein and an opening 321 facing the crucible 20, the containing cup 34 and the buffer 36 are both disposed in the containing space S, the bottom of the containing cup 34 is tapered and has an opening 341, the buffer 36 is disposed below the containing cup 34, the buffer member 36 has a receiving surface 361 and a discharging portion 362, the receiving surface 361 is disposed in an inclined manner and is located right below the opening 341 of the receiving cup 34, the discharging portion 362 is connected to the receiving surface 361 and is located lower than the receiving surface 361. In the embodiment, the containing cup 34 and the buffer member 36 are separately disposed, and practically, it is not excluded that the containing cup 34 is partially or completely disposed in the inner containing space of the buffer member 36; in addition, in the present embodiment, the buffer member 36 is exemplified by a cup similar to the cup 34, but in other embodiments, the buffer member 36 may be an object having only the receiving surface 361 and the discharging portion 362, and the buffer member 36 does not necessarily have a cup body of the cup.

Referring to fig. 3, the cup 34 has a central axis C, the buffer 36 has a tapered hole 36a, a hole wall 361a of the tapered hole 36a forms the receiving surface 361, the tapered hole 36a has a lower opening 362a forms the discharging portion 362, and a first reference surface F1 is defined perpendicular to the central axis C, referring to fig. 4, the opening 341 of the cup 34 has a first projection surface a1 projected on the first reference surface F1, the lower opening 362a has a second projection surface a2 projected on the first reference surface F1, wherein the first projection surface a1 and the second projection surface a2 do not intersect with each other, that is, when the liquid dopant falls from the opening 341 of the cup 34, the liquid dopant does not directly pass through the opening 362a below the cup 36 and the surface I of the liquid buffer in the crucible 20, and the first projection surface a1 and the second projection surface a2 of the present invention do not intersect with each other, after falling from the opening 341 of the cup 34, the liquid dopant contacts the hole wall 361a of the buffer 36, and then slides into the lower opening 362a to fall onto the surface I of the liquid silicon material in the crucible 20, thereby preventing the melt from splashing.

As shown in fig. 3, the opening 341 of the cup 34 has a first center point P1, the lower opening 362a of the conical hole 36a of the buffer 36 has a second center point P2, at least one of the first center point P1 and the second center point P2 has a spacing from the central axis C, and the pitch is 3mm or more, preferably 4mm or more and 10mm or less, preferably 5mm or more and 10mm or less, in the present embodiment, the distance between the first center point P1 and the central axis C is defined as a first distance D1, a second pitch D2 is defined as a distance between the second center point P2 and the central axis C, wherein the first distance D1 is equal to the second distance D2, in other embodiments, the first distance D1 and the second distance D2 may not be equal to each other. It should be noted that, in the present embodiment, the distance is greater than or equal to 8% of the inner radius R1 of the cup 34 and less than or equal to 30% of the inner radius R1 of the cup 34, and the inner radius R1 of the cup 34 is the minimum distance from the inner wall of the cup 34 to the central axis C of the cup 34, and the range of the distance is selected from greater than or equal to 8% of the inner radius of the cup 34 and less than or equal to 30% of the inner radius of the cup 34 in the present embodiment because, when the distance is less than 8% of the inner radius R1 of the cup 34, the distance between the opening 341 of the cup 34 and the lower opening 362a of the cushion material 36 is too close, so that the solution falling from the opening 341 of the cup 34 to the receiving surface 361 of the cushion material 36 flows out from the lower opening 362a too quickly, resulting in poor buffering effect; when the distance is larger than 30% of the inner radius R1 of the container 34, the distance between the opening 341 of the container 34 and the lower opening 362a of the buffer 36 is too long, which results in a poor doping effect due to too long retention time of the solution on the receiving surface 361 of the buffer 36. In other embodiments, the distance may be equal to or greater than 11% of the inner radius R1 of the cup 34 and equal to or less than 30% of the inner radius R1 of the cup 34, or equal to or greater than 15% of the inner radius R1 of the cup 34 and equal to or less than 25% of the inner radius of the cup 34.

Referring to fig. 5, a second reference plane F2 is defined to pass through the central axis C and be perpendicular to the first reference plane F1, the bottom of the cup 34 and the second reference plane F2 intersect at two first line segments L1, an included angle θ 1 between the two first line segments L1 is greater than or equal to 50 degrees and less than or equal to 70 degrees, preferably, the included angle θ 1 satisfies greater than or equal to 60 degrees and less than or equal to 65 degrees, the receiving surface 361 of the buffer 36 and the second reference plane F2 intersect at two second line segments L2, an included angle θ 2 between the two second line segments L2 is greater than or equal to 50 degrees and less than or equal to 70 degrees, preferably, the included angle θ 2 satisfies greater than or equal to 60 degrees and less than or equal to 65 degrees, the angle design of the cup 34 and the buffer 36 has the effect of smoothly guiding the outflow of the liquid dopant, wherein the reason why the included angles θ 1 and θ 2 are greater than or equal to 50 degrees and less than or equal to 70 degrees, when the included angle θ 2 is smaller than 50 degrees, the buffering effect is not good, splashing is easily generated when the included angle θ 2 is smaller than that of the liquid dopant falling from the containing cup 34 to the buffering member 36, and when the included angle θ 1 and the included angle θ 2 are larger than 70 degrees, the problem that the flowing speed of the liquid dopant is too slow is easily caused. In this embodiment, it is illustrated that the included angle θ 1 and the included angle θ 2 are both equal to 63 degrees, in practice, the included angle θ 1 and the included angle θ 2 may be designed at different angles, and further, the included angle θ 2 may be designed to be greater than or equal to the included angle θ 1.

Referring to fig. 6 and 3, four engaging grooves are disposed on an inner wall of the cover 32, each engaging groove has an upward open end 322a, 323a, two engaging grooves are defined as a first engaging groove 322 and a second engaging groove 323, the first engaging grooves 322 are disposed at a position higher than the second engaging grooves 323, the first engaging grooves 322 are disposed opposite to each other in a horizontal direction, the second engaging grooves 323 are disposed opposite to each other in a horizontal direction, the cup holder 34 has two lugs 342 disposed opposite to each other, the buffer 36 has two lugs 363 disposed opposite to each other, the lugs 342 of the cup holder 34 and the lugs 363 of the buffer 36 are detachably connected to the first engaging grooves 322 and the second engaging grooves 323, respectively, and each lug 342, 363 enters each engaging groove from the upper open end 322a, 323a, therefore, when the user installs the cup 34 and the buffer element 36 in the cap 32, the user can put the cup 34 into the accommodation space S from the opening 321 of the cap 32, then place the lug 342 of the cup 34 in the first slot 322 of the cap 32, then place the buffer element 36 into the accommodation space S from the opening 321 of the cap 32, then place the lug 363 of the buffer element 36 in the second slot 323 of the cap 32, and the lug 342 of the cup 34 and the lug 363 of the buffer element 36 are detachably disposed with the first slot 322 and the second slot 323, respectively, which has an effect of convenient assembly and disassembly, in addition, the two-piece design of the cup 34 and the buffer element 36 has an effect of convenient assembly and disassembly and cleaning.

It should be noted that, as shown in fig. 2, in the present embodiment, the containing cup 34 and the buffering member 36 are illustrated by taking two identical beakers as an example, so that when a user installs the containing cup 34 and the buffering member 36, the lug 342 of the containing cup 34 can be first disposed in the first slot 322 of the cover cap 32, then the buffering member 36 is horizontally rotated 180 degrees relative to the direction in which the containing cup 34 is disposed, and the lug 363 of the buffering member 36 is disposed in the second slot 323 of the cover cap 32, so that the arrangement that the opening 341 of the containing cup 34 and the opening 362a under the buffering member 36 are staggered with each other can be achieved, and the installation is convenient.

Referring to fig. 7, the cover 32 has a first groove 324 and a second groove 325 at the periphery of the opening 321, the first groove 324 is recessed from the periphery of the opening 321, the minimum distance h1 between the bottom of the first groove 324 and the opening 321 is greater than or equal to 5mm and less than or equal to 15mm, the minimum distance h1 between the bottom of the first groove 324 and the opening 321 is selected to be greater than or equal to 5mm and less than or equal to 15mm because the liquid silicon material in the crucible 20 is sucked into the cover 32 due to the siphon effect when the minimum distance h1 is less than 5mm, and the liquid silicon material is excessively volatilized due to an excessively large opening of the first groove 324 when the minimum distance h1 is greater than 15mm, thereby affecting the doping efficiency, in other embodiments, the minimum distance h1 between the bottom of the first groove 324 and the opening 321 is greater than or equal to 8mm and less than or equal to 15mm, or satisfies the condition of not less than 5mm and not more than 10 mm. The second groove 325 is formed by being recessed from the bottom of the first groove 324, the minimum distance h2 between the bottom of the second groove 325 and the opening 321 is greater than the minimum distance h1 between the bottom of the first groove 324 and the opening 321, and the minimum distance h2 between the bottom of the second groove 325 and the opening 321 is greater than or equal to 10mm and less than or equal to 20mm, whereby the opening 321 of the cover 32 can be disposed at a position contacting or close to the surface I of the liquid silicon material in the crucible 20 to confine the heated and volatilized gaseous dopant in the cover 32 to avoid the excessive volatilization of the gaseous dopant, and when the opening 321 of the cover 32 contacts the surface I of the liquid silicon material in the crucible 20, the accommodation space S of the cover 32 can communicate with the outside through the first groove 324 and the second groove 325, which can avoid the dopant from entering the liquid silicon material, the pressure inside the cover cap 32 is reduced to suck the liquid silicon material into the cover cap 32, so that the liquid level is raised to form a closed space in the receiving space S of the cover cap 32, and when the first grooves 324 are submerged by the surface of the liquid silicon material in the crucible 20, the receiving space S of the cover cap 32 can be communicated with the space outside the cover cap 32 by the design of the second grooves 325, in this embodiment, the cover cap 32 has two first grooves 324 arranged oppositely on the periphery of the opening 321, and two second grooves 325 are formed on two sides of the bottom of each first groove 324 in a recessed manner.

In the present embodiment, as shown in fig. 8, the first grooves 324 are illustrated as a group of two and each of the first grooves 324 is disposed oppositely, wherein the plurality of first grooves 324 are disposed oppositely to each other, so as to stabilize the airflow between the receiving space S of the cover 32 and the space outside the cover 32, in practice, the number of the first grooves 324 may be more than one group, and the receiving space S of the cover 32 is communicated with the outside, so as to avoid the pressure difference between the receiving space S inside the cover 32 and the outside.

It should be noted that, in the present embodiment, the plurality of second grooves 325 are disposed on both sides of the bottom of the first groove 324, that is, the second grooves 325a, 325b are recessed from the bottom of the first groove 324, in other embodiments, as shown in fig. 9, the second grooves 325a, 325b may be disposed separately from the first grooves 324, that is, the second grooves 325a, 325b are recessed from the periphery of the opening 321, and the minimum distances ha 7, hb2 between the bottoms of the second grooves 325a, 325b and the opening 321 may be ha2 not equal to hb2 (as shown in fig. 9) or ha2 equal to hb2, besides, the groove widths wa2, wb2 of the second grooves 325a, 325b may be set differently from wa2 wb2 or equal to wa 58 2 (as shown in fig. 9), and when the first grooves 324 are submerged in the liquid silicon crucible 20, by the design of the second recesses 325a, 325b, the receiving space S of the cover 32 can communicate with the space outside the cover 32, and in addition, in the embodiment where the second recesses 325a, 325b are separated from the first recesses 324, the number of the second recesses may be two or more.

In addition, in the present embodiment, the width w1 of the first groove 324 satisfies the condition of being greater than or equal to 25% and less than or equal to 50% of the inner diameter R2 (in fig. 3), the width w2 of the second groove 325 satisfies the condition of being greater than or equal to 5% and less than or equal to 10% of the inner diameter R2 of the cover 32, the inner diameter R2 of the cover 32 is the diameter of the transverse circular section of the inner wall of the cover 32, the width w1 of the first groove 324 satisfies the condition of being greater than or equal to 25% and less than or equal to 50% of the inner diameter R2 of the cover 32 because the liquid silicon material in the crucible 20 is sucked into the cover 32 by a siphon effect when the width w1 of the first groove 324 is less than 25% of the inner diameter R2 of the cover 32, and the gaseous dopant is excessively volatilized when the width w1 of the first groove 324 is greater than 50% of the inner diameter R2, therefore, the width w1 of the first recess 324 of the present invention is selected to satisfy the condition of being greater than or equal to 25% and less than or equal to 50% of the inner diameter R2 of the cover 32, so as to effectively confine the thermally volatilized gaseous dopant in the cover 32 and prevent the gaseous dopant from being excessively volatilized. In other embodiments, the groove width w1 of the first groove 324 satisfies the condition of 30% or more and 50% or less of the cap inner diameter R2 or the groove width w1 of the first groove 324 satisfies the condition of 35% or more and 50% or less of the cap inner diameter R2. In practice, the first groove and the second groove may be in other shapes such as an arc shape, an inverted V shape or any shape, and are not limited to the embodiment of the invention.

It should be noted that, in the embodiment, taking the example that the opening 321 of the cover cap 32 contacts the surface I of the liquid silicon material in the crucible 20 as an example, in order to effectively confine the heated and volatilized gaseous dopant in the cover cap 32 and avoid excessive volatilization of the gaseous dopant, in practice, as shown in fig. 10, the minimum distance h3 between the opening 321 of the cover cap 32 and the surface I of the liquid silicon material is preferably less than or equal to 10mm, and in other embodiments, the minimum distance h3 between the opening 321 of the cover cap 32 and the surface I of the liquid silicon material can be less than or equal to 5mm or less than or equal to 1mm, and the effect of avoiding diffusion of the gaseous dopant can be achieved.

Referring to the following table 1, the experimental group is experimental data of doping using the crystal doping apparatus 30 of the present invention, and the control group is doping data of the existing crystal doping apparatus, in which after a solid silicon material is placed in a crucible and melted into a liquid silicon material, a solid dopant sintered on a seed crystal is dropped into the liquid silicon material through a suspension wire, so that the solid dopant contacts with the liquid silicon material to perform doping. Wherein, the amount of the dopant actually doped into the product can be calculated according to the measured resistance of the doped product, and the doping efficiency can be obtained by calculating the proportional relationship between the amount of the dopant actually doped into the product and the total amount of the dopant, as shown in Table 1, it can be known that the product with higher doping efficiency can be obtained by using the crystal doping apparatus 30 of the present invention for doping compared with the control group, that is, the diffusion and volatilization of the gaseous dopant can be effectively reduced by using the crystal doping apparatus 30 of the present invention for doping in the gas and liquid states, and the doping efficiency is better than the doping efficiency of the control group using the solid state doping.

[ TABLE 1 ]

Accordingly, when the solid dopant D contained in the containing cup 34 is heated and melted into a liquid, the liquid dopant can flow out through the opening 341 of the containing cup 34 and fall on the receiving surface 361 of the buffer member 36, and then flow to the discharging portion 362 guided by the receiving surface 361 arranged obliquely, and then enter the crucible 20 from the discharging portion 362. The buffering of the receiving surface 361 of the buffering member 36 can improve the problem of splashing of the melt caused by directly throwing solid or liquid dopant into the liquid silicon in the conventional crystal doping device. In addition, the design of the cover 32 of the present invention can confine the heated and volatilized gaseous dopant in the cover 32, so that the gaseous dopant can also diffuse into the silicon material from the liquid surface of the liquid silicon material, thereby increasing the doping efficiency.

The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications to the present invention as described and claimed should be included in the scope of the present invention.

Description of the reference numerals

[ invention ]

1: single crystal growth apparatus

10: cavity body

20: crucible pot

30: crystal doping device

32: cover cap

321: opening of the container

322: first card slot

322a, 323 a: upper open end

323: second card slot

324: the first groove

325: second groove

34: containing cup

341: opening holes

342: convex lug

36: buffer piece

361: bearing surface

362: discharge part

363: convex lug

36 a: taper hole

361 a: pore wall

362 a: lower opening hole

40: heating module

A1: first projection plane

A2: second plane of projection

C: central axis

D: dopant(s)

D1: first interval

D2: second pitch

F1: first reference surface

F2: second reference plane

I: surface of

L1: first line segment

L2: second line segment

P1: first center point

P2: second center point

S: containing space

θ 1, θ 2: included angle

R1: inner radius

R2: inner diameter

h1, h2, h3, ha2, hb 2: distance between two adjacent plates

w1, w2, wa2, wb 2: width of groove

A. B: the direction of the cross section.