Method, device and equipment for controlling crystal growth diameter and computer storage medium

文档序号：237820 发布日期：2021-11-12 浏览：40次中文

阅读说明：本技术 晶体生长直径的控制方法、装置、设备及计算机存储介质 (Method, device and equipment for controlling crystal growth diameter and computer storage medium ) 是由宋少杰宋振亮于 2021-08-18 设计创作，主要内容包括：本发明实施例公开了一种晶体生长直径的控制方法、装置、设备及计算机存储介质；所述控制方法包括：在等径生长阶段预先获取液位间距的变化值以及相应的晶体生长直径偏差值,并确定所述液位间距的变化值以及晶体生长直径偏差值之间的对应关系；根据所述对应关系以及液位间距的变化速度,确定直径自动控制装置ADC的目标位置并水平移动所述ADC装置至所述目标位置；在所述ADC装置移动至所述目标位置后,调整光学高温计传感器接收的亮度值为目标亮度值；其中,所述目标亮度值用于表征所述晶体的生长直径为目标生长直径。(The embodiment of the invention discloses a method, a device and equipment for controlling the growth diameter of a crystal and a computer storage medium; the control method comprises the following steps: the method comprises the steps of obtaining a change value of a liquid level interval and a corresponding crystal growth diameter deviation value in advance at an equal-diameter growth stage, and determining a corresponding relation between the change value of the liquid level interval and the crystal growth diameter deviation value; determining a target position of an ADC (analog to digital converter) of the diameter automatic control device and horizontally moving the ADC device to the target position according to the corresponding relation and the change speed of the liquid level interval; after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value; wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.)

1. A method of controlling a crystal growth diameter, the method comprising:

the method comprises the steps of obtaining a change value of a liquid level interval and a corresponding crystal growth diameter deviation value in advance at an equal-diameter growth stage, and determining a corresponding relation between the change value of the liquid level interval and the crystal growth diameter deviation value;

determining a target position of an ADC (analog to digital converter) of the diameter automatic control device and horizontally moving the ADC device to the target position according to the corresponding relation and the change speed of the liquid level interval;

after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value;

wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

2. The control method of claim 1, wherein the pre-acquiring the variation value of the liquid level spacing and the corresponding deviation value of the crystal growth diameter in the equal-diameter growth stage and determining the corresponding relationship between the variation value of the liquid level spacing and the deviation value of the crystal growth diameter comprises:

in the equal-diameter growth stage of the crystal, a change value delta X of a liquid level interval and a deviation value delta D of the growth diameter of the crystal are obtained through a CCD camera;

and acquiring an included angle between the ADC device and the target crystal according to the change value delta X of the liquid level interval and the corresponding crystal growth diameter deviation value delta D.

3. The control method according to claim 2, wherein the obtaining an included angle between the ADC unit and the target crystal according to the variation Δ X of the liquid level distance and the corresponding crystal growth diameter deviation Δ D comprises:

according toAnd calculating to obtain an included angle theta between the ADC device and the target crystal.

4. The control method according to claim 3, wherein the determining a target position of an ADC (automatic diameter controller) and horizontally moving the ADC to the target position according to the correspondence and the change speed of the liquid level interval comprises:

acquiring the horizontal moving speed of the ADC device according to the corresponding relation and the change speed of the liquid level interval;

determining a target position of the ADC device according to the horizontal moving speed of the ADC device;

horizontally moving the ADC device to a target position according to the target position of the ADC device.

5. The control method according to claim 4, wherein the obtaining of the horizontal movement speed of the ADC device according to the correspondence relationship and the change speed of the liquid level interval comprises:

according to V₁＝V₂Calculating the x tan theta to obtain the ADCHorizontal moving speed V of device₂；

Wherein, V₁Is the rate of change of the liquid level spacing.

6. The method of claim 1, wherein adjusting the brightness value received by the optical pyrometer sensor to a target brightness value after the ADC device is moved to the target position comprises:

and after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value through the temperature curve of the crystal.

7. The method of claim 1, wherein adjusting the brightness value received by the optical pyrometer sensor to a target brightness value after the ADC device is moved to the target position comprises:

adjusting the brightness value received by the optical pyrometer sensor to a target brightness value by adjusting the pulling speed of the crystal after the ADC unit is moved to the target position.

8. A control device for a crystal growth diameter, the control device comprising: an acquisition section, a moving section, and an adjustment section; wherein the content of the first and second substances,

the acquisition part is configured to acquire a variation value of a liquid level interval and a corresponding crystal growth diameter deviation value in advance at an equal-diameter growth stage, and determine a corresponding relationship between the variation value of the liquid level interval and the crystal growth diameter deviation value;

the moving part is configured to determine a target position of an ADC (automatic diameter control device) according to the corresponding relation and the change speed of the liquid level interval and horizontally move the ADC device to the target position;

the adjustment portion configured to adjust the brightness value received by the optical pyrometer sensor to a target brightness value after the ADC device is moved to the target position; wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

9. An apparatus for controlling a crystal growth diameter, the apparatus being applied to a single crystal furnace, the apparatus comprising: an optical pyrometer sensor, a CCD camera, a memory, and a processor; wherein the content of the first and second substances,

the CCD camera is used for monitoring a liquid level interval change value delta X and a corresponding deviation value delta D of the crystal growth diameter;

the memory for storing a computer program operable on the processor;

the processor, when executing the computer program, is configured to perform the following steps:

after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value;

wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

10. A computer storage medium characterized in that the computer storage medium stores a program of control of a crystal growth diameter, which when executed by at least one processor implements the steps of the method of control of a crystal growth diameter according to any one of claims 1 to 6.

Technical Field

The embodiment of the invention relates to the technical field of crystal growth, in particular to a method, a device and equipment for controlling the growth diameter of a crystal and a computer storage medium.

Background

Electronic grade single crystal silicon crystals are a semiconductor material commonly used in the manufacture of integrated circuits and other electronic components. The current common growing method of the single crystal silicon crystal is a Czochralski (Czochralski) method, which is also called a Czochralski method, namely, in a single crystal furnace, a seed crystal is immersed into a silicon melt contained in a crucible, the seed crystal is pulled while rotating the seed crystal and the crucible, and the tail end of the seed crystal is subjected to seeding, shouldering, shoulder rotating, diameter equalizing, end closing and other technological operations in sequence, so that the single crystal silicon crystal is obtained. The isometric stage is an extremely important process in the growth process of the monocrystalline silicon crystal and is also a key process for ensuring the quality of the monocrystalline silicon crystal.

At present, in the isometric stage, an Automatic crystal growth Diameter Control (ADC) is used to automatically Control the growth Diameter of the crystal. The ADC Device mainly utilizes an optical pyrometer sensor and a Charge Coupled Device (CCD) camera to monitor the growth diameter of a monocrystalline silicon crystal: the method assumes that the liquid level of the molten silicon liquid cannot change at a certain position, receives the thermal radiation of a solid-liquid interface of the molten silicon liquid through an optical pyrometer sensor in the crystal growth process and outputs a corresponding brightness value, and can obtain the growth diameter of the monocrystalline silicon crystal through the brightness value, thereby achieving the purpose of monitoring the growth diameter of the crystal in real time. However, the liquid level position of the silicon melt liquid can change in the growth process of the single crystal silicon crystal, so that the monitoring precision of the ADC device on the crystal growth diameter is influenced, and the quality of the single crystal silicon crystal is finally influenced.

Disclosure of Invention

In view of the above, embodiments of the present invention are directed to a method, an apparatus, a device and a computer storage medium for controlling a crystal growth diameter; the stability and the accuracy of the crystal growth diameter in the crystal growth process can be ensured, and the crystal quality can be improved.

The technical scheme of the embodiment of the invention is realized as follows:

in a first aspect, an embodiment of the present invention provides a method for controlling a crystal growth diameter, where the method includes:

after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value;

wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

In a second aspect, an embodiment of the present invention provides a device for controlling a crystal growth diameter, where the device includes: an acquisition section, a moving section, and an adjustment section; wherein the content of the first and second substances,

In a third aspect, an embodiment of the present invention provides an apparatus for controlling a crystal growth diameter, where the apparatus is applied to a single crystal furnace, and the apparatus includes: an optical pyrometer sensor, a CCD camera, a memory, and a processor; wherein the content of the first and second substances,

the CCD camera is used for monitoring a liquid level interval change value delta X and a corresponding deviation value delta D of the crystal growth diameter;

the memory for storing a computer program operable on the processor;

the processor, when executing the computer program, is configured to perform the following steps:

after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value;

wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

In a fourth aspect, an embodiment of the present invention provides a computer storage medium storing a program for controlling a crystal growth diameter, where the program for controlling a crystal growth diameter is executed by at least one processor to implement the steps of the method for controlling a crystal growth diameter according to the first aspect.

The embodiment of the invention provides a method, a device and equipment for controlling the growth diameter of a crystal and a computer storage medium; the target position of the ADC device in horizontal movement can be determined and the ADC device can be moved to the target position through the corresponding relation between the change value of the liquid level interval and the corresponding crystal growth diameter deviation value and the change speed of the liquid level interval, and meanwhile, the brightness value of the ADC device reflected to the optical pyrometer sensor by the changed solid-liquid interface can be guaranteed not to change through adjusting the brightness value received by the optical pyrometer sensor in the ADC device, and then the crystal with the stable growth diameter is prepared.

Drawings

FIG. 1 is a schematic structural diagram of a single crystal furnace according to an embodiment of the present invention;

FIG. 2 is a schematic flow chart illustrating a method for controlling a growth diameter of a crystal according to an embodiment of the present invention;

FIG. 3 is a schematic diagram illustrating a relationship between a variation value of a liquid level gap and a deviation value of a crystal growth diameter according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a relationship between ADC device positions and crystal included angles according to an embodiment of the present invention;

FIG. 5 is another schematic diagram of the relationship between the ADC device position and the crystal angle according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of an apparatus for controlling a growth diameter of a crystal according to an embodiment of the present invention;

fig. 7 is a schematic diagram of a hardware structure of a device for controlling a crystal growth diameter according to an embodiment of the present invention.

Detailed Description

The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

Referring to fig. 1, a single crystal furnace 1 capable of implementing the technical solution of the embodiment of the present invention is shown, and the single crystal furnace 1 may include: the furnace comprises a furnace body 10, wherein a heating device and a lifting device are arranged in the furnace body 10; the heating means includes a graphite crucible 20, a quartz crucible 30, and a heater 40, etc., wherein the quartz crucible 30 is used to contain silicon raw material, such as polycrystalline silicon. The silicon raw material is heated and melted in the quartz crucible 30 to be the molten silicon MS, the graphite crucible 20 is wrapped on the outer side of the quartz crucible 30 for supporting the quartz crucible 30 during the heating process, and the heater 40 is arranged on the outer side of the graphite crucible 20. The heat shield 50 is arranged above the quartz crucible 30, and the heat shield 50 is provided with a downward-extending inverted cone-shaped shield surrounding the growth area of the monocrystalline silicon crystal and can block direct heat radiation of the heater 40 and the high-temperature silicon melt MS to the grown monocrystalline silicon crystal so as to reduce the temperature of the monocrystalline silicon crystal. Meanwhile, the heat shield 50 can also make the downward-blown protective gas be intensively and directly sprayed to the vicinity of the growth interface, thereby further enhancing the heat dissipation of the monocrystalline silicon crystal.

The pulling device comprises a seed crystal cable 60 and a crucible shaft 70 which are vertically arranged, the seed crystal cable 60 is arranged above the quartz crucible 30, the crucible shaft 70 is arranged at the bottom of the graphite crucible 20, a seed crystal is arranged at the bottom of the seed crystal cable 60 through a clamp, and the top of the seed crystal cable is connected with a seed crystal driving device so that the seed crystal can be rotated and pulled upwards slowly at the same time; a crucible shaft driving device (not shown) is provided at the bottom of the crucible shaft 70, so that the crucible shaft 70 can drive the quartz crucible 30 to rotate.

It should be noted that the structure of the crystal pulling furnace 1 shown in fig. 1 is not particularly limited, and other components required for producing single crystal silicon crystals by the czochralski method are not shown in order to clearly illustrate the technical solution of the embodiment of the present invention. Based on the crystal pulling furnace 1 shown in fig. 1, an observation window 80 may be further opened above the furnace body 10 for the ADC device 2 to monitor the growth diameter of the crystal.

When the single crystal furnace 1 is used for preparing crystals, in the conventional technical scheme, the liquid level position is assumed to be unchanged, so that the ADC device 2 is fixed at a certain position to be kept unchanged in the equal-diameter growth stage of the crystals, and the optical pyrometer sensor 21 receives the brightness value corresponding to the heat radiation of the meniscus to feed back the growth diameter of the crystals. However, in the actual isometric growth stage, the liquid level position of the molten silicon varies at any time as the crystal grows, and the crystal growth diameter varies depending on the different liquid level positions, and therefore, in the isometric growth stage of the crystal, the position of the ADC unit 2 is always fixed, which affects the control accuracy of the crystal growth diameter.

In particular, it is understood that the ADC unit 2 mainly uses the optical pyrometer sensor 21 to receive the heat radiation reflected by the solid-liquid interface of the molten silicon liquid to obtain the corresponding brightness value. When the obtained brightness value is a fixed value, it means that the growth diameter of the crystal is maintained at a stable value. For example, when the obtained brightness value is 2000, the growth diameter of the crystal can be considered to be 300 mm. Therefore, in the embodiment of the invention, in the process of the equal-diameter growth of the crystal, the growth diameter of the crystal is controlled as the target growthMajor diameter D₀It is sufficient that the brightness value corresponding to the meniscus thermal radiation received by the optical pyrometer sensor 21 is controlled in real time to be stabilized at the target brightness value, that is, when the brightness value is the target brightness value, it indicates that the growth diameter of the crystal is the target growth diameter D₀The obtained crystal is the target crystal.

Meanwhile, the CCD camera 22 in the ADC device 2 mainly monitors the liquid level position change of the molten silicon liquid MS and the growth diameter deviation of the crystal during the growth process of the crystal.

It should be noted that, in the embodiment of the present invention, the liquid level position of the molten silicon liquid refers to a distance from the liquid level of the molten silicon liquid to the bottom of the heat shield, that is, a liquid level distance.

Therefore, based on the above explanation, referring to fig. 2, a method for controlling a crystal growth diameter according to an embodiment of the present invention is shown, and the method specifically includes:

s201, obtaining a change value of a liquid level interval and a corresponding crystal growth diameter deviation value in advance at an equal-diameter growth stage, and determining a corresponding relation between the change value of the liquid level interval and the crystal growth diameter deviation value;

s202, determining a target position of an ADC (analog to digital converter) of the diameter automatic control device according to the corresponding relation and the change speed of the liquid level interval, and horizontally moving the ADC device to the target position;

s203, after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value;

wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

For the above technical solution, step S201 may be regarded as a process of obtaining a corresponding relationship between a liquid level distance variation value and a crystal growth diameter deviation value in advance in an equal-diameter growth stage. Step S202 and step S203 can be regarded as a process of adjusting the brightness value received by the optical pyrometer sensor 21 after horizontally moving the ADC unit 2 during the crystal equal-diameter growth process so that the ADC unit 2 is maintained under the same operating conditions to ensure that a crystal of a target growth diameter is obtained.

It should be noted that for the same operating conditions as above, the central axis of the ADC unit 2 is always at a constant angle to the target crystal. Under the condition, the ADC device 2 can be ensured to monitor the growth diameter of the crystal by taking the included angle between the ADC device and the target crystal as the same angle all the time, so that the optical pyrometer sensor 21 is ensured to receive the thermal radiation of the meniscus under the same angle, and the influence on the monitoring result after the ADC device 2 moves is eliminated.

For the solution shown in fig. 2, the horizontal movement target position of the ADC unit 2 can be determined by the correspondence relationship obtained in advance and the liquid level change speed set in advance, and then the brightness value received by the optical pyrometer sensor is adjusted to the target brightness value to ensure that the crystal of the target growth diameter is obtained. Based on this, compared with the related technical scheme, the embodiment of the invention can eliminate the deviation of the crystal growth diameter caused by the change of the liquid level distance so as to obtain the stable and accurate crystal growth diameter.

For the technical solution shown in fig. 2, in some examples, the obtaining a variation value of the liquid level spacing and a corresponding crystal growth diameter deviation value in advance in the equal-diameter growth stage, and determining a corresponding relationship between the variation value of the liquid level spacing and the crystal growth diameter deviation value includes:

For the above example, in some specific embodiments, the obtaining an included angle between the ADC device and the target crystal according to the variation Δ X of the liquid level interval and the corresponding crystal growth diameter deviation value Δ D includes:

according toAnd calculating to obtain an included angle theta between the ADC device and the target crystal.

Understandably, as shown in FIG. 1, in the isometric stage, assuming that the liquid level position is at position I, the growth diameter of the crystal is the target growth diameter D₀(ii) a As can be understood, when the liquid level position of the molten silicon MS changes from the liquid level position I to the liquid level position II, the CCD camera 22 can monitor that the change value of the liquid level distance is Delta X, and the growth diameter of the crystal is changed from D₀Change to D₁The deviation value of the growth diameter is delta D ═ D₁-D₀. Therefore, in conjunction with fig. 3, the angle θ between the ADC device 2 and the target crystal (as shown by the vertical dashed line in the figure) can be obtained, and according to the geometrical relationship shown in fig. 3, the corresponding relationship between the ADC device 2 and the target crystal can be obtained asAnd can further obtain

For the solution shown in fig. 2, in some examples, determining a target position of the automatic diameter control device ADC and horizontally moving the ADC device to the target position according to the correspondence and the change speed of the liquid level interval includes:

acquiring the horizontal moving speed of the ADC device according to the corresponding relation and the change speed of the liquid level interval;

determining a target position of the ADC device according to the horizontal moving speed of the ADC device;

horizontally moving the ADC device to a target position according to the target position of the ADC device.

For the above example, in some specific implementations, the obtaining the horizontal movement speed of the ADC unit according to the correspondence and the change speed of the liquid level interval includes:

according to V₁＝V₂Calculating the multiplied tan theta to obtain the AHorizontal moving speed V of DC device₂；

Wherein, V₁Is the rate of change of the liquid level spacing.

It should be noted that the change speed of the liquid level interval can be measured in real time by the CCD camera 22, for example, an "L" shaped quartz pin is arranged at the bottom of the heat shield, and a bright spot image formed at the solid-liquid interface of the molten silicon MS at the tail end of the "L" shaped quartz pin is monitored in real time by the CCD camera 22 to obtain a liquid level interval change value; of course, the real-time change value of the liquid level distance can also be obtained according to the constant diameter growth time and the distance change value of the solid-liquid interface set in the constant diameter growth stage. The method for acquiring the change speed of the liquid level interval is not specifically described in the embodiment of the invention.

It should be noted that the velocity V vector, and therefore the change velocity V of the specified liquid level interval when the liquid level position rises in the embodiment of the present invention₁At positive speed, the speed V of change of the liquid level spacing as the liquid level descends₁Is a negative speed; when the ADC device 2 moves rightward in the horizontal direction, the horizontal movement speed V is determined₂A positive velocity; conversely, when the ADC device 2 is moved leftward in the horizontal direction, the horizontal movement speed V is determined₂Is a negative velocity.

It will be appreciated that, as shown in fig. 4, if the ADC device 2 is kept at the initial position all the time when the liquid level position changes from the liquid level position i to the liquid level position ii during the isodiametric growth of the crystal, as shown in fig. 4, the angle between the ADC device 2 and the target crystal is θ ', and θ' ≠ θ. Therefore, in order to ensure that the ADC unit 2 can accurately monitor the current crystal growth diameter in real time, as shown in fig. 5, the ADC unit 2 needs to be moved horizontally in real time when the liquid level position changes, so that the included angle between the ADC unit 2 and the target crystal is kept constant, which ensures that the ADC unit 2 monitors the crystal growth process with equal diameter under the same working condition.

Based on the above explanation, it can be seen from fig. 5 that, at time T of the crystal isodiametric stage,ΔX＝V₁x T; and then combined withCan be obtained, V₁＝V₂×tanθ。

For the solution shown in fig. 2, in some examples, the adjusting the brightness value received by the optical pyrometer sensor to the target brightness value after the ADC unit moves to the target position includes:

It can be understood that when the position of the ADC device 2 changes, the brightness value received by the optical pyrometer sensor 21 also changes, and in order to ensure that the brightness value received by the optical pyrometer sensor 21 is still the target brightness value, the brightness value received by the optical pyrometer sensor 21 is automatically adjusted by an Automatic Temperature Conversion (ATC) method so that the brightness value received by the optical pyrometer sensor 21 is the target brightness value, and the crystal growth diameter is the target growth diameter D₀。

adjusting the brightness value received by the optical pyrometer sensor to a target brightness value by adjusting the pulling speed of the crystal after the ADC unit is moved to the target position.

Similarly, when the position of the ADC device 2 is changed, the brightness value received by the optical pyrometer sensor 21 is changed, and in order to ensure that the brightness value received by the optical pyrometer sensor 21 is still the target brightness value, in the embodiment of the present invention, the liquid level position of the molten silicon may be automatically adjusted by adjusting the pulling speed (P/S) of the crystal, so that the brightness value received by the optical pyrometer sensor 21 is the target brightness value, and the crystal growsDiameter is the target growth diameter D₀。

Based on the same inventive concept of the foregoing technical solution, referring to fig. 6, a control device 60 for controlling a crystal growth diameter according to an embodiment of the present invention is shown, where the control device 60 includes: an acquisition section 601, a moving section 602, and an adjustment section 603; wherein the content of the first and second substances,

the acquiring part 601 is configured to acquire a variation value of a liquid level interval and a corresponding crystal growth diameter deviation value in advance at an equal-diameter growth stage, and determine a corresponding relationship between the variation value of the liquid level interval and the crystal growth diameter deviation value;

the moving part 602 is configured to determine a target position of the automatic diameter control device ADC and horizontally move the ADC device to the target position according to the correspondence and a change speed of the liquid level interval;

the adjusting part 603 configured to adjust the brightness value received by the optical pyrometer sensor to a target brightness value after the ADC device is moved to the target position; wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

In some examples, the acquisition portion 601 is configured to:

according toAnd calculating to obtain an included angle theta between the ADC device and the target crystal.

In some examples, the moving portion 602 is configured to:

acquiring the horizontal moving speed of the ADC device according to the corresponding relation and the change speed of the liquid level interval;

determining a target position of the ADC device according to the horizontal moving speed of the ADC device;

horizontally moving the ADC device to a target position according to the target position of the ADC device.

In some examples, the moving portion 602 is further configured to:

according to V₁＝V₂Calculating the horizontal moving speed V of the ADC device₂；

Wherein, V₁Is the rate of change of the liquid level spacing.

In some examples, the adjustment portion 603 is configured to:

In some examples, the adjustment portion 603 is further configured to:

adjusting the brightness value received by the optical pyrometer sensor to a target brightness value by adjusting the pulling speed of the crystal after the ADC unit is moved to the target position.

It is understood that in this embodiment, "part" may be part of a circuit, part of a processor, part of a program or software, etc., and may also be a unit, and may also be a module or a non-modular.

In addition, each component in the embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit. The integrated unit can be realized in a form of hardware or a form of a software functional module.

Based on the understanding that the technical solution of the present embodiment essentially or a part contributing to the prior art, or all or part of the technical solution may be embodied in the form of a software product stored in a storage medium, and include several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) or a processor (processor) to execute all or part of the steps of the method of the present embodiment. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.

Therefore, the present embodiment provides a computer storage medium, which stores a program for controlling a crystal growth diameter, and the program for controlling a crystal growth diameter is executed by at least one processor to implement the steps of the method for controlling a crystal growth diameter in the above technical solution.

Referring to fig. 7, a specific hardware structure of a control apparatus 70 for controlling the crystal growth diameter of the control apparatus 60 for controlling the crystal growth diameter according to the above-mentioned crystal growth diameter is shown, wherein the apparatus 70 can be applied to the single crystal furnace 1 shown in fig. 1, and the apparatus 70 can include: an optical pyrometer sensor 21, a CCD camera 22, a memory 701, and a processor 702; the various components are coupled together by a bus system 703. It is understood that the bus system 703 is used to enable communications among the components. The bus system 703 includes a power bus, a control bus, and a status signal bus in addition to the data bus. For clarity of illustration, however, the various buses are labeled in fig. 7 as bus system 703. Wherein the content of the first and second substances,

the CCD camera 22 is used for monitoring a liquid level interval change value delta X and a corresponding deviation value delta D of the crystal growth diameter;

the memory 701 is used for storing a computer program capable of running on the processor 702;

the processor 702 is configured to, when running the computer program, perform the following steps:

after the ADC device moves to the target position, adjusting the brightness value received by the optical pyrometer sensor to be a target brightness value;

wherein the target brightness value is used for characterizing the growth diameter of the crystal as a target growth diameter.

It will be appreciated that the memory 701 in embodiments of the invention may be either volatile memory or nonvolatile memory, or may include both volatile and nonvolatile memory. The non-volatile Memory may be a Read-Only Memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an Electrically Erasable PROM (EEPROM), or a flash Memory. Volatile Memory can be Random Access Memory (RAM), which acts as external cache Memory. By way of illustration and not limitation, many forms of RAM are available, such as Static random access memory (Static RAM, SRAM), Dynamic Random Access Memory (DRAM), Synchronous Dynamic random access memory (Synchronous DRAM, SDRAM), Double Data Rate Synchronous Dynamic random access memory (ddr Data Rate SDRAM, ddr SDRAM), Enhanced Synchronous SDRAM (ESDRAM), Synchlink DRAM (SLDRAM), and Direct Rambus RAM (DRRAM). The memory 701 of the systems and methods described herein is intended to comprise, without being limited to, these and any other suitable types of memory.

And the processor 702 may be an integrated circuit chip having signal processing capabilities. In implementation, the steps of the above method may be performed by integrated logic circuits of hardware or instructions in the form of software in the processor 702. The Processor 702 may be a general-purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, or discrete hardware components. The various methods, steps and logic blocks disclosed in the embodiments of the present invention may be implemented or performed. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of the method disclosed in connection with the embodiments of the present invention may be directly implemented by a hardware decoding processor, or implemented by a combination of hardware and software modules in the decoding processor. The software module may be located in ram, flash memory, rom, prom, or eprom, registers, etc. storage media as is well known in the art. The storage medium is located in the memory 701, and the processor 702 reads the information in the memory 701, and completes the steps of the method in combination with the hardware thereof.

It is to be understood that the embodiments described herein may be implemented in hardware, software, firmware, middleware, microcode, or any combination thereof. For a hardware implementation, the Processing units may be implemented within one or more Application Specific Integrated Circuits (ASICs), Digital Signal Processors (DSPs), Digital Signal Processing Devices (DSPDs), Programmable Logic Devices (PLDs), Field Programmable Gate Arrays (FPGAs), general purpose processors, controllers, micro-controllers, microprocessors, other electronic units configured to perform the functions described herein, or a combination thereof.

For a software implementation, the techniques described herein may be implemented with modules (e.g., procedures, functions, and so on) that perform the functions described herein. The software codes may be stored in a memory and executed by a processor. The memory may be implemented within the processor or external to the processor.

Specifically, when the processor 702 is further configured to run the computer program, the steps of the method for controlling the crystal growth diameter in the foregoing technical solution are executed, and are not described herein again.

It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

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