阅读说明：本技术 一种合金/磁绝缘体自旋异质结及其制备方法和应用 (Alloy/magnetic insulator spin heterojunction and preparation method and application thereof ) 是由 张有禄 张岱南 邱孝鑫 张怀武 于 2021-08-30 设计创作，主要内容包括：本发明提供一种合金/磁绝缘体自旋异质结及其制备方法和应用,属于自旋电子器件技术领域。本发明使用<111>晶向的钆镓石榴石为衬底,采用液相外延(LPE)法在衬底表面生长具有高质量的Bi:TmIG薄膜,作为磁绝缘层,然后通过磁控溅射法生长锗铋铂合金薄膜,作为重金属层,进而形成GeBi:Pt/Bi:TmIG的合金/磁绝缘体自旋异质结结构,该结构提高了电荷电流到自旋电流的转化效率,降低磁化翻转所需的电流密度,节约功耗,能够实现更快的磁矩翻转操作。(The invention provides an alloy/magnetic insulator spin heterojunction and a preparation method and application thereof, belonging to the technical field of spin electronic devices. The method uses gadolinium gallium garnet with the crystal orientation of <111> as a substrate, adopts a Liquid Phase Epitaxy (LPE) method to grow a Bi: TmIG film with high quality on the surface of the substrate to serve as a magnetic insulation layer, then grows a germanium bismuth platinum alloy film through a magnetron sputtering method to serve as a heavy metal layer, and further forms an alloy/magnetic insulator spin heterojunction structure of GeBi: Pt/Bi: TmIG.)

1. The alloy/magnetic insulator spin heterojunction is characterized by sequentially comprising a gadolinium gallium garnet substrate, a Bi: TmIG film and a germanium bismuth platinum alloy film from bottom to top, wherein the total doping amount of Ge and Bi in the germanium bismuth platinum alloy is not more than 10%, and the doping amount of Bi in the Bi: TmIG film is 0.15% -0.5%.

2. The alloy/magnetic-insulator spin heterojunction as claimed in claim 1 wherein said gadolinium gallium garnet substrate is a single crystal gadolinium gallium garnet substrate of <111> crystal orientation.

3. The alloy/magnetic insulator spin heterojunction as claimed in claim 1, wherein said Bi: TmIG thin film has a thickness of 150nm to 4 μm, and said Ge-Bi-Pt alloy thin film has a thickness of 8nm to 10 nm.

4. The alloy/magnetic insulator spin heterojunction as claimed in claim 1 wherein the composition of the germanium bismuth platinum alloy thin film is Pt when the total doping amount of Ge and Bi in the germanium bismuth platinum alloy is 10%_0.90Bi_xGe_0.10-xAnd x is 0.02-0.08.

5. A preparation method of an alloy/magnetic insulator spin heterojunction is characterized by comprising the following steps:

step 1, cleaning a gadolinium gallium garnet substrate;

step 2, growing a Bi TmIG film on the surface of the gadolinium gallium garnet substrate cleaned in the step 1 by adopting a liquid phase epitaxy method;

and 3, growing a germanium bismuth platinum alloy film on the surface of the Bi/TmIG film obtained in the step 2 by adopting a magnetron sputtering method to obtain the required alloy/magnetic insulator spin heterojunction, wherein the total doping amount of Ge and Bi in the germanium bismuth platinum alloy is less than 10%.

6. The preparation method according to claim 5, wherein the specific process of growing the Bi in step 2 by liquid phase epitaxy method is as follows:

step 2.1. oxide raw material comprises Ga₂O₃、Tm₂O₃、Fe₂O₃、Bi₂O₃The molar ratio ranges are as follows: ga₂O₃:Fe₂O₃＝0.1～0.135，Tm₂O₃:Fe₂O₃＝0.1～0.2，Bi₂O₃:Fe₂O₃5.4-10.2; during growth, the raw materials are completely and uniformly mixed, and are melted in a platinum crucible at the temperature of 1000-1050 ℃ for 24 hours, and then the mixture is cooled to the growth temperature to obtain a melt;

step 2.2, fixing the gadolinium gallium garnet substrate on a substrate frame, enabling the surface of the substrate to form a certain angle with the liquid level of the melt to incline, then placing the substrate frame into the melt, and controlling the rotating speed of the substrate to be 60-80rpm/min and the growth temperature to be 885-900 ℃;

step 2.3, after the growth reaches the required time, the substrate is taken out of the melt and stands for a period of time above the liquid level of the melt, and then the substrate is taken out of the furnace body opening and stands again;

and 2.4, putting the single crystal thin film substrate obtained in the step 2.3 into a hot nitric acid solution (the volume ratio of concentrated nitric acid to deionized water is 1:1) for cleaning to remove the residual fluxing agent on the surface of the film, thus obtaining the Bi: TmIG thin film on the surface of the gadolinium gallium garnet substrate.

7. The method according to claim 6, wherein the angle formed by the surface of the substrate and the melt level in step 2.2 is 7-10 °.

8. The preparation method of claim 5, wherein in the specific process of growing the Ge-Bi-Pt alloy film by the magnetron sputtering method in the step 3, the total doping amount of Ge and Bi is regulated and controlled by the area of the high-purity Ge and Bi sheet attached to the surface of the Pt target material.

9. An alloy/magnetic insulator spin heterojunction device is characterized in that the alloy/magnetic insulator spin heterojunction film of any one of claims 1-4 is subjected to photoetching and etching to form a cross-shaped Hall bar, and then the spin heterojunction device can be obtained; the spin heterojunction device is used in the field of spin logic devices or memory.

Technical Field

The invention belongs to the technical field of spin electronic devices, and particularly relates to an alloy/magnetic insulator spin heterojunction and a preparation method and application thereof.

Background

The development of spintronics has changed the history that electronic devices could previously only be fabricated using electronic charges, providing another operational dimension beyond electronic charges, namely the manipulation of electron spin, which provides the basis for the construction of new types of devices. In 1996, j.slonczewski and l.berger predicted theoretically the presence of spin-transfer torque (STT) effects. When a spin-polarized current passes through the magnetic material, the spin electrons in the current affect the electrons near the fermi surface, causing the magnetization vector of the magnetic thin film to change. This finding means that it is possible to manipulate the magnetic moment of a magnetic material directly with a current, and a memory based on the STT effect has been widely studied due to its low loss. However, the main unit of the STT-MRAM structure is a Magnetic Tunnel Junction (MTJ), and its specific structure is composed of two ferromagnetic layers with different thicknesses and an insulating oxide layer in between. When the device is in operation, a charge current is applied through the MTJ, the electrons are spin-polarized in one of the ferromagnetic layers, and the magnetization state of the other ferromagnetic layer is manipulated using the STT effect. In practical application, the charge current passes through the tunnel insulating oxide layer, so that the service life of the oxide layer is lost, and the breakdown of the oxide can be caused by larger current. Therefore, how to reduce the current for STT-manipulated magnetization switching is a significant problem, and due to read-write path coupling, accidental switching of the magnetic state may result.

In recent years, research has found that an alternative magnetization manipulation technique, Spin Orbit Torque (SOT), overcomes the above-mentioned shortcomings of the STT technique by current-controlled switching of the magnetic moment states of ferromagnetic layers (FM). The SOT technique achieves the inversion of spin torque by injected current induced spin current. The typical structure of an SOT device is a bilayer consisting of a ferromagnetic layer (FM) and a nonmagnetic material layer (NM), when an in-plane charge current is injected into the NM layer, a transverse spin current is generated at the interface due to the spin-orbit coupling (SOC) effect of the NM/FM interface, and this spin accumulation at the interface exerts a torque on the magnetization of the FM, thereby switching the magnetization state of the FM. Compared with the traditional spin polarization current mode based on current perpendicular to the film surface, the write current of the SOT device is along the film plane, so that the write speed of the write current can be improved, and the current density required by magnetization switching is lower, so that the SOT device has greater advantages than an STT (spin transfer torque) in the aspects of reducing power consumption and faster device operation.

The strength of Spin Orbit Torque (SOT) effect mainly depends on the Spin Orbit Coupling (SOC) strength of the heavy metal layer, and by selecting a proper strong Spin orbit coupling material, the device based on the SOT effect can realize the operation of magnetic moment overturning with smaller current density. Currently, studies based on the SOT effect mainly focus on the perpendicular magnetization heterojunction of a heavy metal/ferromagnetic metal double-layer thin film, and in such a structure, the efficiency of converting a charge current into a spin current is limited by the limitation of the SOC characteristics of the material itself by the heavy metal. In addition, the spin heterojunction interface composition also determines the switching speed of the magnetic moment. Therefore, it is very important to find a material with strong spin orbit coupling and a novel spin wave heterojunction structure with rapid magnetic moment flip. In 2017, Avci and Quindeau et al photo-etch Pt film into Hall Bar pattern in Pt/TmIG which is a heavy metal/magnetic insulator heterojunction for the first time, and pass current in the Hall Bar pattern, and realize magnetization reversal in vertically magnetized TmIG film. However, the TmIG film is mostly grown by adopting a pulse laser deposition method to adjust the stress borne by the film so as to change the anisotropy of the film, and the method is difficult to grow the film with good out-of-plane perpendicular anisotropy; at the same time, the current density required to drive the magnetization reversal is still large. Therefore, it is also important to find new materials with large spin hall angle to improve the conversion efficiency of charge current to spin current.

Disclosure of Invention

In view of the problems in the background art, the invention aims to provide an alloy/magnetic insulator spin heterojunction and a preparation method and application thereof. The method uses gadolinium gallium garnet with the crystal orientation of <111> as a substrate, adopts a Liquid Phase Epitaxy (LPE) method to grow a Bi: TmIG film with high quality on the surface of the substrate to serve as a magnetic insulation layer, then grows a germanium bismuth platinum alloy film through a magnetron sputtering method to serve as a heavy metal layer, and further forms an alloy/magnetic insulator spin heterojunction structure of GeBi: Pt/Bi: TmIG.

In order to achieve the purpose, the technical scheme of the invention is as follows:

an alloy/magnetic insulator spin heterojunction, which comprises the following components in sequence from bottom to top: the film comprises a gadolinium gallium garnet substrate, a Bi: TmIG film and a germanium bismuth platinum alloy film, wherein the total doping amount of Ge and Bi in the germanium bismuth platinum alloy is not more than 10%, and the doping amount of Bi in the Bi: TmIG film is 0.15-0.5%.

Further, the gadolinium gallium garnet substrate adopts a single crystal gadolinium gallium garnet substrate with a <111> crystal orientation.

Furthermore, the thickness of the Bi: TmIG film is 150nm-4 mu m, and the thickness of the germanium bismuth platinum alloy film is 8nm-10 nm.

Further, when the total doping amount of Ge and Bi in the germanium bismuth platinum alloy is 10%, the component of the germanium bismuth platinum alloy film is Pt_0.90Bi_xGe_0.10-xAnd x is 0.02-0.08.

A preparation method of an alloy/magnetic insulator spin heterojunction comprises the following steps:

step 1, cleaning a gadolinium gallium garnet substrate;

step 2, growing a Bi TmIG film on the surface of the gadolinium gallium garnet substrate cleaned in the step 1 by adopting a liquid phase epitaxy method;

and 3, growing a germanium bismuth platinum alloy film on the surface of the Bi/TmIG film obtained in the step 2 by adopting a magnetron sputtering method to obtain the required alloy/magnetic insulator spin heterojunction, wherein the total doping amount of Ge and Bi in the germanium bismuth platinum alloy is less than 10%.

Further, the specific process of growing the Bi in the step 2 by the liquid phase epitaxy method is as follows:

step 2.1. oxide raw material comprises Ga₂O₃、Tm₂O₃、Fe₂O₃、Bi₂O₃The molar ratio ranges are as follows: ga₂O₃:Fe₂O₃＝0.1～0.135，Tm₂O₃:Fe₂O₃＝0.1～0.2，Bi₂O₃:Fe₂O₃5.4-10.2; will grow as it growsThe materials are completely and uniformly mixed, melted in a platinum crucible at the temperature of 1000-1050 ℃ for 24 hours, and then cooled to the growth temperature to obtain a melt;

step 2.2, fixing the gadolinium gallium garnet substrate on a substrate frame, wherein the surface of the substrate and the liquid level of the melt form a certain angle inclination, so that the residual melt on the surface of the substrate after the film epitaxy is finished can be conveniently separated, then placing the substrate frame into the melt, and controlling the rotating speed of the substrate to be 60-80rpm/min and the growth temperature to be 885-;

step 2.3, after the growth reaches the required time, the substrate is taken out of the melt and stands for 20 minutes above the liquid level of the melt, so that the residual melt can fall off conveniently, then the substrate is slowly (the film is prevented from cracking due to thermal stress) taken out of the furnace body opening, and the substrate is rested again (the temperature of the furnace body opening is waited to reach the room temperature, so that the influence of thermal shock on the outer edge film is avoided);

and 2.4, putting the single crystal thin film substrate obtained in the step 2.3 into a hot nitric acid solution (the volume ratio of concentrated nitric acid to deionized water is 1:1) for cleaning to remove the residual fluxing agent on the surface of the film, thus obtaining the Bi: TmIG thin film on the surface of the gadolinium gallium garnet substrate.

Further, the angle formed by the surface of the substrate and the melt level in step 2.2 is 7-10 °.

Further, in the specific process of growing the germanium bismuth platinum alloy film by the magnetron sputtering method in the step 3, the total doping amount of Ge and Bi is regulated and controlled by the area of the high-purity germanium and bismuth sheet attached to the surface of the platinum target material.

An alloy/magnetic insulator spin heterojunction device is characterized in that the alloy/magnetic insulator spin heterojunction film is subjected to photoetching and etching to form a cross-shaped Hall bar, so that the spin heterojunction device can be obtained; the spin heterojunction device can be used in the fields of spin logic devices and memory.

In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:

1. in the alloy/magnetic insulator spin heterojunction provided by the invention, the mixed conductance of the heterojunction interface can be effectively changed by doping Ge and Bi, so that the conversion efficiency from charge current to spin current is improved, and the power consumption is reduced.

2. The TmIG film has good out-of-plane perpendicular magnetic anisotropy, and compared with the perpendicular magnetization heterojunction of the existing heavy metal/ferromagnetic metal double-layer film, the charge current is limited in the metal layer, so that the generation of extra power consumption is avoided; meanwhile, the Bi TmIG film obtained by doping Bi has the advantages that lattice mismatch is reduced, so that the film quality is better, and the Bi element has high SOC intensity, so that the hysteresis loop square characteristics of the Bi TmIG film are better, the magneto-optical characteristics are greatly enhanced, the magnetic moment is easier to turn, the energy consumption is reduced, and the faster magnetic moment turning operation can be realized.

Drawings

FIG. 1 is a structural schematic diagram of an alloy/magnetic insulator spin heterojunction based on GeBi: Pt/Bi: TmIG in the invention.

FIG. 2 is a schematic structural diagram of a GeBi: Pt/Bi: TmIG-based spin heterojunction device obtained in example 1 of the present invention.

FIG. 3 is a Bi: TmIG thin film MOKE test chart with a thickness of 150nm obtained in example 1 of the present invention.

FIG. 4 is a graph of the abnormal Hall effect test based on the GeBi: Pt/Bi: TmIG spin heterojunction in example 1 of the present invention.

FIG. 5 is a schematic diagram of a GeBi: Pt/Bi: TmIG based spin heterojunction storage scheme of the present invention.

FIG. 6 is a schematic diagram of a spin logic device based on GeBi: Pt/Bi: TmIG spin heterostructure in the present invention.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.

An alloy/magnetic insulator spin heterojunction is shown in fig. 1, and comprises the following components in sequence from bottom to top: the film comprises a gadolinium gallium garnet substrate, a Bi: TmIG film and a germanium bismuth platinum alloy film, wherein the total doping amount of Ge and Bi in the germanium bismuth platinum alloy is less than 10%, the thickness of the Bi: TmIG film is 150nm-4 mu m, and the thickness of the germanium bismuth platinum alloy film is 8nm-10 nm.

A preparation method of an alloy/magnetic insulator spin heterojunction device comprises the following steps:

step 1, cleaning a gadolinium gallium garnet substrate;

step 2, growing a Bi TmIG film on the surface of the gadolinium gallium garnet substrate cleaned in the step 1 by adopting a liquid phase epitaxy method;

and 3, growing a germanium bismuth platinum alloy film on the surface of the Bi: TmIG film obtained in the step 2 by adopting a magnetron sputtering method, thus obtaining the required alloy/magnetic insulator spin heterojunction.

Example 1

The preparation method of the alloy/magnetic insulator spin heterojunction device based on GeBi Pt/Bi TmIG comprises the following steps of:

step 1, cleaning a gadolinium gallium garnet substrate: selecting a single crystal gadolinium gallium garnet substrate with <111> crystal orientation as a substrate, fixing the substrate on a platinum support by using a platinum wire, soaking the substrate in a trichloroethylene solution at 80 ℃ for 5 minutes, and then washing the substrate in deionized water at 80 ℃ for 10 minutes; then the substrate is put into a sulfuric acid solution of potassium dichromate at 80 ℃ for cleaning, and then the substrate is sequentially washed twice by deionized water at 80 ℃; then, putting the substrate into an aqueous alkali at 80 ℃ (the aqueous solution is prepared by sodium phosphate, sodium carbonate and potassium hydroxide according to the mass ratio of 1:1: 1) to be soaked for about 5 minutes, and then sequentially washing the substrate twice with deionized water at 80 ℃; then, putting the substrate into an ammonia water solution at normal temperature for soaking for about 5 minutes, finally washing the substrate by using deionized water at normal temperature, and distilling the washed substrate above a boiled isopropanol solution to remove water on the surface of the substrate to obtain a gadolinium gallium garnet substrate with high surface cleanliness;

step 2, growing a Bi/TmIG film on the surface of the gadolinium gallium garnet substrate cleaned in the step 1 by adopting a liquid phase epitaxy method, wherein the specific process comprises the following steps:

step 2.1. adding Ga₂O₃、Tm₂O₃、Fe₂O₃、Bi₂O₃Oxide raw materials are completely and uniformly mixed according to the molar ratio of 1:1.2:9.6:62.8, and are put into a platinum crucible at 1050 DEG CMelting the raw materials in a crucible for 24 hours, cooling to 1000 ℃, and stirring the melt with platinum slurry for 12 hours to obtain a melt;

step 2.2, fixing the gadolinium gallium garnet substrate on a substrate frame, wherein the surface of the substrate and the liquid level of the melt form an angle inclination of 10 degrees, so that the residual melt on the surface of the substrate is separated after the film epitaxy is finished conveniently, then placing the substrate frame into the melt, controlling the rotating speed of the substrate to be 60rpm/min and the growth temperature to be 885 ℃;

step 2.3, the growth time is 1.5min, the substrate changes the rotation direction once every 5s, after the growth is finished, the substrate is taken out of the melt and stands for 20 minutes above the liquid level of the melt, so that the residual melt can fall off conveniently, and then the substrate is slowly (the film is prevented from cracking due to thermal stress) taken out of the furnace body opening and stands again;

and 2.4, putting the single crystal film substrate obtained in the step 2.3 into hot nitric acid (the volume ratio of concentrated nitric acid to deionized water is 1:1) for cleaning to remove the residual fluxing agent on the surface of the film, thus obtaining the Bi: TmIG film with the thickness of 150nm on the surface of the gadolinium gallium garnet substrate.

Step 3, growing a germanium bismuth platinum alloy film on the surface of the Bi/TmIG film obtained in the step 2 by adopting a magnetron sputtering method, wherein the component of the film is Pt_0.90Bi_0.08Ge_0.02The specific process is as follows:

step 3.1, cleaning the gadolinium gallium garnet substrate with the Bi TmIG film grown in the step 2 again by using absolute ethyl alcohol and deionized water, blow-drying by using a nitrogen gun, and placing in magnetron sputtering equipment;

step 3.2. the vacuum degree of the back bottom of the main chamber is 7 multiplied by 10^-5Introducing Ar gas under Pa, and regulating the flow rate to stabilize the air pressure of the main vacuum chamber to 0.3 Pa;

3.3, adjusting the power of direct current sputtering to be 10W, opening a baffle of a germanium bismuth platinum alloy target position, sputtering for 60s, closing the baffle after growth is completed, and closing an argon and direct current sputtering source to obtain a germanium bismuth platinum alloy film with the thickness of 10nm, wherein the germanium bismuth platinum alloy target is obtained by attaching high-purity germanium and bismuth sheets to a platinum target material, and the purity of the germanium and bismuth sheets is 99.999%;

and 4, preparing the substrate with the two layers of films obtained in the step 3 into a cross-shaped Hall bar shape shown in figure 2 through photoetching and etching processes, wherein the specific structure is shown in figure 2.

The MOKE test chart of the Bi: TmIG film prepared in the embodiment is shown in FIG. 3. As shown in FIG. 3, MOKE measurement is carried out on a Bi: TmIG film with the thickness of 150nm grown by a liquid phase epitaxy process, so that the film has good magnetic hysteresis loop squareness, has good out-of-plane perpendicular magnetic anisotropy, and can be well applied to the field of magnetic storage. FIG. 4 is a graph of the results of an abnormal Hall effect test of a spin heterojunction, from which it can be seen that the state of magnetic moment can be represented by the positive and negative of the abnormal Hall resistance, indicating that the heterojunction is capable of achieving magnetic moment flipping.

Example 2

A heterojunction was prepared by following the procedure of example 1, adjusting only step 2 so that the thickness of the magnetic insulating layer Bi: TmIG thin film was 750nm, and the other steps were not changed.

The magnetic insulation layers are different in thickness, different in coercive force and different in current required for overturning.

Example 3

Preparing the heterojunction according to the steps of the embodiment 1, and only adjusting the target material in the step 3, namely controlling the doping amount of germanium and bismuth by controlling the number of germanium and bismuth sheets, so that the prepared germanium bismuth platinum alloy film has the component of Pt_0.90Bi_0.05Ge_0.05And other steps are unchanged.

The doping amount of germanium and bismuth in the germanium-bismuth-platinum alloy of the heavy metal layer influences the efficiency of converting charge current into spin current.

Example 4

The storage application of the alloy/magnetic insulator spin heterojunction device based on GeBi: Pt/Bi: TmIG comprises the following specific processes:

as a spin heterojunction device based on the SOT effect, the inversion of spin torque can be achieved by an injected current-induced spin current, and a varying current (ac current) can generate a magnetic field. In this example, a pulse current is used instead of the ac current. The storage function is realized by using two states of magnetic moment upward and magnetic moment downward in a magnetic insulating layer of the TmIG to respectively represent 1 and 0. Such as a bag made ofIn order to realize the deterministic reversal of magnetic moment, the SOT device with a double-layer structure consisting of NM/FM has to apply a magnetic field parallel to the current direction to break the symmetry of the system. In the invention, the magnetic insulating layer Bi: TmIG film has abnormal Hall effect due to the magnetic moment perpendicular to the film surface, and abnormal Hall resistance R_HAnd is in direct proportion to the magnetic moment in the normal direction of the film, so that the abnormal Hall resistance value can be easily calculated by measuring the voltage, and the direction of the magnetic moment can be determined.

A specific implementation is shown in FIG. 5, where H is applied in the positive x-direction_XA magnetic field of 600Oe acts as an auxiliary field in order to achieve a deterministic switching of the magnetic moment. The a and b electrodes are used as pulse current injection ends, the current is defined to be positive current from a to b, and the current can be positive or negative. c and d are used as voltage measuring terminals.

After the auxiliary field is applied, write pulse current is introduced between the a and b electrodes, and when the current exceeds the critical switching current, the magnetization state of the magnetic insulation layer is changed. A positive pulse current large enough can flip the magnetic moment of the magnetic insulating layer from down to up, while a negative pulse current strong enough can flip the magnetic moment of the magnetic insulating layer from up to down. The pulse current is applied in such a way that the time required for the magnetic moment to flip is short and the write current can be removed after a certain time (in the order of microseconds) has been applied. To obtain the state of the magnetic moment at this time, a suitable read current I is applied between a and b_RAt this time, the voltage value V between the terminals c and d is measured_HThrough R_H＝V_H/I_RIs calculated and then passed through R_HThe state of the memory cell can be known by the sign of the value.

Example 5

The application of the alloy/magnetic insulator spin heterojunction device based on GeBi: Pt/Bi: TmIG comprises the following specific processes:

the prototype design of the spin logic device is shown in FIG. 6, with the current direction shown as I_AAnd I_BShown, defined as the positive direction. Recording of simultaneously applied pulse currents I_A＝I_BThe critical current that enables a deterministic reversal of the magnetic moment is denoted as I_C. The direction of the in-plane magnetic field H is along the current I_AAnd I_BIn the direction of the bisector of the angle, i.e. the angleThe magnetic field H ═ 1000 Oe. The magnetic field in the plane has the effect of breaking the symmetry of the system and realizing the deterministic overturning of the magnetic moment. Selection of the direction of the in-plane magnetic field along the current I_AAnd I_BThe direction of the angular bisector of (A) is due to the need to ensure that when I is used to implement the logic operation_A＝I_B＝+I_CWhile the resultant direction of the total current vector is along the current I_AAnd I_BIn the direction of the bisector of the angle, i.e. the angleThe direction of the magnetic field is parallel to the direction of the total current; or when I_A＝I_B＝-I_CWhen the resultant direction of the total current vector is anti-parallel to the direction of the magnetic field, i.e. the angleOnly in these two cases the magnetic moment can be flipped, while in other cases the resultant direction of the total current vector is not parallel or anti-parallel to the magnetic field direction and therefore does not cause the magnetic moment to flip.

In the logic gate device, the Hall bar shape is completely symmetrical and equal along the x and y directions, and the injected pulse current I_AAnd I_BRespectively representing the logic inputs "1," -I of the logic gate circuit_Aand-I_BRepresenting the logic input "0" of the logic gate circuit. The magnetic moment in the magnetic insulator layer is up to represent a logic output "1" and the magnetic moment is down to correspond to a logic output "0". R is obtained by measurement and calculation by utilizing abnormal Hall effect_HThe sign of the value indicates the state of the magnetic moment in the magnetic insulating layer. After the logic operation is completed, to obtain the state of magnetic moment, along I_AA read current I with proper magnitude is injected in the direction_RIn I_BAnd calculating the voltage measured at the two ends of the direction to obtain a logic operation result. In a prototype of a logic gate, pass in both the x and y directionsPulse current is injected to ensure I_A＝I_BAt this time, the critical current for making the magnetic moment to be turned over deterministically is recorded as I_C。

As shown in table 1, is a truth table for a logic or gate. Before each logic operation, the initial magnetization state is set to the magnetic moment direction upward. When pulse currents I are simultaneously input_A＝I_B＝+I_CThat is, when logic (1, 1) is input, the magnetic moment remains in the upward state, and the equivalent logic output is "1; when pulse current is input at the same time as I_A＝I_B＝-I_CThat is, when a logic (0, 0) is input, the magnetic moment is inverted and turned to a downward state, and the equivalent logic output is "0"; "to I_A＝+I_C，I_B＝-I_CAnd I_A＝-I_C，I_B＝+I_CIn both cases, the direction of the magnetic moment is not inverted, i.e. the initial magnetization magnetic moment is still in the upward state, the equivalent logic output is "1", and based on the above operations, the function of the logic or gate is realized.

TABLE 1

IA	IB	Equivalent logic inputs	Direction of magnetic moment	Equivalent logic output
					+IC	+IC	(1，1)	↑	“1”
+IC	-IC	(1，0)	↑	“1”
					-IC	+IC	(0，1)	↑	“1”
-IC	-IC	(0，0)	↓	“0”

As shown in table 2, the truth table of the logic and gate. Before each logic operation, the initial magnetization state is set to the magnetic moment direction downward. When pulse currents I are simultaneously input_A＝I_B＝+I_CThat is, when logic (1, 1) is input, the magnetic moment is inverted to the upward state, and the equivalent logic output is "1; when the input current is I at the same time_A＝I_B＝-I_CThat is, when a logic (0, 0) is input, the magnetic moment remains in the down state, and the equivalent logic output is "0; "to I_A＝+I_C，I_B＝-I_CAnd I_A＝-I_C，I_B＝+I_CIn both cases, the direction of the magnetic moment is not inverted, i.e. the state that the initial magnetization magnetic moment is downward is still maintained, the equivalent logic output is '0', and based on the above operations, the logic AND gate is realizedAnd (4) performing functions.

TABLE 2

IA	IB	Equivalent logic inputs	Direction of magnetic moment	Equivalent logic output
					+IC	+IC	(1，1)	↑	“1”
+IC	-IC	(1，0)	↓	“0”
					-IC	+IC	(0，1)	↓	“0”
-IC	-IC	(0，0)	↓	“0”

While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.