阅读说明：本技术 半导体装置以及半导体装置的制造方法 (Semiconductor device and method for manufacturing semiconductor device ) 是由 山崎舜平 神保安弘 石川纯 手塚祐朗 掛端哲弥 于 2019-10-17 设计创作，主要内容包括：提供一种具有良好的电特性的半导体装置。该半导体装置包括第一氧化物、第一氧化物上的第一导电体及第二导电体、第一导电体上的第一绝缘体、第二导电体上的第二绝缘体、第一绝缘体及第二绝缘体上的第三绝缘体、在第一氧化物上配置在第一导电体与第二导电体之间的第二氧化物、第二氧化物上的第四绝缘体、第四绝缘体上的第三导电体、接触于第三绝缘体的顶面、第二氧化物的顶面、第四绝缘体的顶面及第三导电体的顶面的第五绝缘体、嵌入到形成在第一绝缘体、第三绝缘体及第五绝缘体中的开口中且与第一导电体接触的第四导电体、以及嵌入到形成在第二绝缘体、第三绝缘体及第五绝缘体的开口中且与第二导电体接触的第五导电体,其中,第三绝缘体在与第四导电体的界面附近及与第五导电体的界面附近具有其氮浓度高于第三绝缘体的其他区域的区域。(A semiconductor device having excellent electrical characteristics is provided. The semiconductor device includes a first oxide, a first conductor and a second conductor on the first oxide, a first insulator on the first conductor, a second insulator on the second conductor, a third insulator on the first insulator and the second insulator, a second oxide disposed between the first conductor and the second conductor on the first oxide, a fourth insulator on the second oxide, a third conductor on the fourth insulator, a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor, a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor, and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor, wherein the third insulator has a region having a higher nitrogen concentration than other regions of the third insulator in the vicinity of the interface with the fourth conductor and in the vicinity of the interface with the fifth conductor.)