阅读说明：本技术 一种基于RF-SiP技术的声表面波开关滤波模块和电子设备 (Surface acoustic wave switch filtering module based on RF-SiP technology and electronic equipment ) 是由 魏家贵 陈瑞 黄海猛 于 2020-05-13 设计创作，主要内容包括：本发明涉及射频电子技术领域,尤其涉及一种基于RF-SiP技术的声表面波开关滤波模块和电子设备,包括：陶瓷表贴管座、金属盖板和电子元器件的裸体芯片,电子元器件的裸体芯片包括：声表面波滤波器芯片、射频开关芯片、电容芯片；电子元器件的裸体芯片位于陶瓷表贴管座的台阶腔内及台阶腔的内陷腔；金属盖板焊接于陶瓷表贴管座的顶部,以对电子元器件的裸体芯片进行封装。本发明采用射频系统级封装RF-SiP技术集成声表面波滤波器芯片、射频开关芯片、电容芯片形成的开关滤波功能集成模块,可以大幅缩减结构尺寸,并改善互联结构带来的射频性能恶化,从而满足小型化接收机的需求。(The invention relates to the technical field of radio frequency electronics, in particular to a surface acoustic wave switch filter module and electronic equipment based on an RF-SiP technology, which comprises: ceramic table pastes pipe seat, metal covering and electronic components's naked chip, and electronic components's naked chip includes: the device comprises a surface acoustic wave filter chip, a radio frequency switch chip and a capacitor chip; the bare chip of the electronic component is positioned in the step cavity of the ceramic surface-mounted tube seat and the invagination cavity of the step cavity; the metal cover plate is welded on the top of the ceramic surface-mounted tube seat so as to package a bare chip of the electronic component. The invention adopts the radio frequency system level packaging RF-SiP technology to integrate the switch filtering function integrated module formed by the surface acoustic wave filter chip, the radio frequency switch chip and the capacitor chip, can greatly reduce the structure size, and improves the radio frequency performance deterioration brought by the interconnection structure, thereby meeting the requirement of a miniaturized receiver.)

1. A surface acoustic wave switch filter module based on RF-SiP technology, comprising: a ceramic surface-mounted tube seat, a metal cover plate and a bare chip of an electronic component, wherein,

the pottery table pastes the tube socket and has the step chamber, electronic components's naked body chip includes: the device comprises a surface acoustic wave filter chip, a radio frequency switch chip, a capacitor chip, an inverter chip and a matching circuit chip;

the surface acoustic wave filter chip is attached to an inner sunken cavity in the step cavity, and the radio frequency switch chip, the capacitor chip, the inverter chip and the matching circuit chip are all attached to the surface in the step cavity;

the control logic and the power supply of the module are wired in a layered mode, the radio frequency signal is wired on the surface inside the step cavity, and interfaces of the control logic, the power supply and the radio frequency signal are led out of the bottom of the ceramic packaging module;

the metal cover plate is welded on the top of the ceramic surface-mounted tube seat so as to package a bare chip of the electronic component.

2. The surface acoustic wave switch filter module based on the RF-SiP technology of claim 1, wherein the number of the surface acoustic wave filter chips is at least two, the number of the radio frequency switch chips is two, and the number of the matching circuit chips is 2 times the number of the surface acoustic wave filter chips.

3. A surface acoustic wave switch filter module based on RF-SiP technology as claimed in claim 1, wherein the metal cover plate is welded to the top of the ceramic surface mount header using parallel seam welding.

4. A surface acoustic wave switch filter module based on RF-SiP technology as claimed in claim 1, wherein the metal cover plate is sealed by a nitrogen filling process when welded on top of the ceramic surface mount tube base.

5. A surface acoustic wave switch filter module based on RF-SiP technology according to any of claims 1-4, characterized in that the ceramic surface mount die is a high temperature co-fired ceramic die.

6. A surface acoustic wave switch filter module based on RF-SiP technology as claimed in claim 5, wherein the bare chip of electronic components further comprises: and the amplifier chip is pasted on the upper surface in the step cavity.

7. A surface acoustic wave switch filter module based on RF-SiP technology as claimed in claim 6, characterized in that the amplifier chip is mounted rotatable 180 °.

8. A surface acoustic wave switch filter module based on RF-SiP technology according to claim 5, characterized in that the individual chips are interconnected with the ceramic package signal by means of bonding or flip chip bonding.

9. An electronic device comprising a surface acoustic wave switch filter module based on RF-SiP technology according to any of claims 1-8.

Technical Field

The invention relates to the technical field of radio frequency electronics, in particular to a surface acoustic wave switch filter module based on an RF-SiP technology and electronic equipment.

Background

At present, the existing surface acoustic wave switch filtering amplification module adopts a packaged surface acoustic wave filter and other packaged components, and the components are independently packaged and then interconnected, so that the module is large in size; and as frequencies increase (especially above 1 GHz), the module size will also be reduced at the expense of performance. In addition, the radio frequency performance deterioration brought by the traditional surface acoustic wave filter packaging and interconnection structure and the larger packaging size increase the miniaturization difficulty of the receiver and increase the development and production cost of the miniaturized receiver.

Disclosure of Invention

The technical problem to be solved by the invention is to provide a surface acoustic wave switch filter module and electronic equipment based on an RF-SiP technology aiming at the defects of the prior art.

The technical scheme for solving the technical problems is as follows:

a surface acoustic wave switch filter module based on RF-SiP technology includes: a ceramic surface-mounted tube seat, a metal cover plate and a bare chip of an electronic component, wherein,

the pottery table pastes the tube socket and has the step chamber, electronic components's naked body chip includes: the device comprises a surface acoustic wave filter chip, a radio frequency switch chip, a capacitor chip, an inverter chip and a matching circuit chip;

the surface acoustic wave filter chip is attached to an inner sunken cavity in the step cavity, and the radio frequency switch chip, the capacitor chip, the inverter chip and the matching circuit chip are all attached to the lower bottom surface of the step cavity;

the control logic and the power supply of the module are wired in a layered mode, the radio frequency signal is wired on the surface inside the step cavity, and interfaces of the control logic, the power supply and the radio frequency signal are led out of the bottom of the ceramic packaging module;

the metal cover plate is welded on the top of the ceramic surface-mounted tube seat so as to package the bare chip of the electronic component.

The invention has the beneficial effects that: a surface acoustic wave filter bare chip and a switch filtering function integrated module of other bare chips (a radio frequency switch bare chip, a capacitance bare chip and the like) are integrated by adopting a radio frequency system-in-package (RF-SiP) technology. Compared with the traditional surface acoustic wave switch filter module, the structure size is greatly reduced, the radio frequency performance deterioration caused by an interconnection structure is improved, and the requirement of a miniaturized receiver can be met.

On the basis of the technical scheme, the invention can be further improved as follows.

Furthermore, the number of the surface acoustic wave filter chips is at least two, the number of the radio frequency switch chips is two, and the number of the matching circuit chips is 2 times that of the surface acoustic wave filter chips.

The beneficial effect of adopting the further scheme is that: through encapsulating a plurality of surface acoustic wave filter chips, the frequency selection of radio frequency signals can be realized, and the requirement of a multi-channel miniaturized receiver can be met.

And further, welding the metal cover plate to the top of the ceramic surface-mounted tube seat by adopting parallel seam welding.

Further, when the metal cover plate is welded on the top of the ceramic surface-mounted tube seat, the metal cover plate is sealed by adopting a nitrogen filling process.

The beneficial effect of adopting the further scheme is that: by sealing the metal cover plate using a nitrogen-charging process, the life of the module can be extended.

Further, the ceramic surface-mounted tube seat is a high-temperature co-fired ceramic tube seat.

The beneficial effect of adopting the further scheme is that: by adopting the multilayer high-density wiring and the high-temperature co-fired ceramic tube seat with the step cavity and the embedded cavity, the bare chip of the electronic component can be arranged in the step cavity and on the surface of the embedded cavity, so that the size of the surface acoustic wave switch filtering amplification module can be greatly reduced.

Further, the bare chip of the electronic component further includes: and the amplifier chip is pasted on the upper surface in the step cavity.

The beneficial effect of adopting the further scheme is that: a surface acoustic wave filter bare chip and a switch filtering and amplifying function integrated module of other bare chips (a radio frequency switch bare chip, a capacitance bare chip, an amplifier bare chip and the like) are integrated by adopting a radio frequency system-in-package (RF-SiP) technology. Compared with the traditional surface acoustic wave switch filtering amplification module, the structure size is greatly reduced, the radio frequency performance deterioration caused by an interconnection structure is improved, and the requirement of a miniaturized receiver can be met.

Further, the amplifier chip can be mounted by rotating 180 degrees.

The beneficial effect of adopting the further scheme is that: due to the flexible arrangement of the internal wiring of the multilayer high-temperature co-fired ceramic tube seat, the exchange of the amplifier as an input stage and an output stage can be realized only by rotating the amplifier chip for 180 degrees for mounting, so that the amplifier can realize pre-amplification or post-amplification in a module, the low-noise amplification or signal level driving application is met, and the ceramic surface-mounted shell does not need to be replaced.

Further, the chips and the ceramic package are interconnected through a bonding mode or a flip chip bonding mode.

Further, chips except the acoustic surface filter chip in the bare chip of the electronic component are pasted on corresponding bonding pads on the inner surface of the step cavity in a flip chip mode; the surface acoustic wave filter chip is pasted on a corresponding bonding pad of an embedded cavity in the step cavity in a flip-chip welding mode; the signals are interconnected and routed out through high density wiring inside the ceramic surface mount housing.

Further, chip patches except the acoustic surface filter chip in the bare chip of the electronic component are arranged on the inner surface of the step cavity by adopting a patch process and connected with corresponding bonding pads in a bonding mode; the surface acoustic wave filter chip is pasted on the embedded cavity in the step cavity by adopting a pasting process and is connected with the corresponding bonding pad in a bonding mode; the signals are interconnected and routed out through high density wiring inside the ceramic surface mount housing.

Another technical solution of the present invention for solving the above technical problems is as follows:

an electronic device comprising a surface acoustic wave switch filter module based on RF-SiP technology as described in any of the previous embodiments.

The invention has the beneficial effects that: compared with the electronic equipment adopting the traditional surface acoustic wave switch filter module, the electronic equipment in the embodiment of the invention adopts the surface acoustic wave switch filter module with the greatly reduced structural size, and can meet the requirements of a miniaturized receiver, particularly a multichannel miniaturized receiver.

Advantages of additional aspects of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention or in the description of the prior art will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic block diagram of an example of a surface acoustic wave switch filter module based on an RF-SiP technology, which is applied to a two-channel switch filter amplifier module according to an embodiment of the present invention;

FIG. 2 is a schematic plan layout of the two-channel switch filter amplifier module of FIG. 1;

fig. 3 is a schematic diagram of the shape and pin distribution of the two-channel switch filter amplifier module of fig. 1.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, shall fall within the scope of protection of the present invention.

In the face of the increasing demand for miniaturized, high-performance, and highly reliable electronic systems In the fields of wireless communication, radar, microwave measurement, etc., the design of miniaturized Radio Frequency circuits based on Radio Frequency-System In Package (RF-SiP) technology has been considered as one of the mainstream trends of future development of Radio Frequency electronic technology.

Therefore, the inventor of the present application has learned the above technical development trend and has combined with the current larger packaging size of the surface acoustic wave switch filter amplification module, so as to increase the miniaturization difficulty of the receiver and improve the problems of development and production cost of the miniaturized receiver, and the like.

The embodiment of the invention provides a surface acoustic wave switch filtering module based on an RF-SiP technology, which comprises: the ceramic surface-mounted tube seat, the metal cover plate and the naked chip of the electronic component. Wherein the content of the first and second substances,

the ceramic surface-mounted tube seat is provided with a step cavity, and the naked chip of the electronic component comprises: the device comprises a surface acoustic wave filter chip, a radio frequency switch chip, a capacitor chip, a phase inverter chip and a matching circuit chip.

The surface acoustic wave filter chip is pasted on an inner sunken cavity in the step cavity, and the radio frequency switch chip, the capacitor chip, the phase inverter chip and the matching circuit chip are all pasted on the inner surface of the step cavity.

The control logic and the power supply of the module are wired in a layered mode, the radio frequency signal is wired on the surface in the step cavity, and interfaces of the control logic, the power supply and the radio frequency signal are led out of the bottom of the ceramic packaging module.

The metal cover plate is welded on the top of the ceramic surface-mounted tube seat to package a bare chip of the electronic component, so that the bare chip of the electronic component is sealed and protected.

In the Surface acoustic wave switch filter module based on the RF-SiP technology in the above embodiment, when a ceramic Surface Mount package csmp (ceramic Surface Mount package) is used, an smt (Surface Mount technology) mounting process may be used, so that a reliability risk caused by manual welding may be reduced.

Specifically, in this embodiment, parallel seam welding is used to weld the metal cover plate to the top of the ceramic surface mount socket. And, in order to prolong the life of the module, when welding the metal cover plate on the top of the ceramic surface mount tube seat, the metal cover plate can be sealed by adopting a nitrogen charging process.

Specifically, in this embodiment, the electronic component includes: the device comprises a gallium arsenide-based single-pole multi-throw switch, a silicon-based inverter, a gallium arsenide-based matching circuit, a piezoelectric-based surface acoustic wave filter and a silicon-based capacitor.

The number of the surface acoustic wave filter chips is at least two, the number of the radio frequency switch chips is two, and the number of the matching circuit chips is 2 times of that of the surface acoustic wave filter chips, so that frequency selection of radio frequency signals is realized.

In another embodiment, the bare chip of the electronic component further includes: the amplifier chip is pasted on the upper surface in the step cavity in a rotating mode by 180 degrees, the amplifier can be exchanged between an input stage and an output stage, pre-amplification or post-amplification of the amplifier in a module can be achieved, low-noise amplification or signal level driving application is met, a ceramic surface-mounted shell does not need to be replaced, and the ceramic surface-mounted shell is composed of a ceramic surface-mounted tube seat and a metal cover plate.

Specifically, in this embodiment, the electronic component further includes: a GaAs based amplifier.

It should be understood that the surface acoustic wave switch filter module based on the RF-SiP technology includes an amplifier chip, and has a function of switching filter amplification, and is actually a surface acoustic wave switch filter amplifier module. Namely, the surface acoustic wave switch filter module can be manufactured based on the RF-SiP technology, and the surface acoustic wave switch filter amplification module can also be manufactured.

It should be noted that, the technical solution of the surface acoustic wave switch filter amplifier module based on the RF-SiP technology is not limited to the number of frequency-selective channels and the chip-package interconnection mode (bonding or flip chip).

The following describes embodiments of the present invention in detail with reference to fig. 1 to 3, taking a two-channel RF-SiP-based integrated surface acoustic wave switch filter amplifier module and a surface acoustic wave switch filter module based on RF-SiP technology as an example.

It should be noted that: the following examples are intended to illustrate the invention and are not intended to limit the technical solutions described in the present invention; thus, although the present invention has been described in detail with reference to the following examples, it will be understood by those skilled in the art that the present invention may be modified and equivalents may be substituted; all such modifications and variations are intended to be included herein within the scope of this disclosure and the appended claims.

The principle diagram of the surface acoustic wave switch filter module based on the RF-SiP is shown in figure 1, the plane layout is shown in figure 2, and the appearance structure is shown in figure 3.

As shown in fig. 3, pins 3 and 11 of the module are rf signal input/output pins (i.e., pin 11 is an output when pin 3 is an input, and pin 11 is an input when pin 3 is an output), pin 14 is a power supply pin, pin 16 is a control pin, and the rest pins are ground pins. The module adopts radio frequency system level packaging, and the external packaging form is ceramic surface mounting (as shown in figure 3); the ceramic surface-mounted tube seat is made of high-temperature co-fired ceramic with multiple layers of high-density wiring, a step cavity and an embedded cavity, and electronic component bare chip ICs are arranged in the step cavity and the surface of the embedded cavity.

As shown in fig. 2, the electronic component bare chip IC includes: the amplifier comprises an amplifier 1, a capacitor 2, a capacitor 3, a capacitor 4, a single-pole double-throw switch 5, a capacitor 6, a capacitor 7, a capacitor 8, a matching circuit 9, a surface acoustic wave filter 10, a matching circuit 11, a capacitor 12, a single-pole double-throw switch 13, a capacitor 14, a capacitor 15, a capacitor 16, a matching circuit 17, a surface acoustic wave filter 18, a matching circuit 19, a capacitor 20, an inverter 21, a capacitor 22, a capacitor 23 and a capacitor 24.

Amplifiers and single-pole double-throw switches in the electronic components are all gallium arsenide-based Monolithic Microwave Integrated Circuits (MMICs), and the single-pole double-throw switches appear in pairs.

The surface acoustic wave filter is a piezoelectric-based IC, which can be replaced as needed for characteristics such as frequency bandwidth.

The inverter is a silicon-based IC, so that the control logic quantity of the MMIC single-pole double-throw switch can be reduced, and the radio-frequency signal paths are prevented from crossing on the same plane, so that the internal layer wiring structure and the external pin quantity of the ceramic surface-mounted shell are optimized.

When the interconnection signal is realized in a flip-chip mode, the MMIC chip and the silicon-based IC chip are pasted on the corresponding bonding pads on the inner surface (27 shown in figure 2) of the step cavity of the ceramic shell in a flip-chip mode; using flip-chip bonding to place the surface acoustic filter IC on the corresponding bonding pads of the embedded cavities (25, 26 shown in FIG. 2) in the stepped cavity of the ceramic shell; and interconnection of all signals and leading-out of signals are realized through high-density wiring in the ceramic surface-mounted shell.

When the interconnection signal is realized by adopting a bonding mode, the MMIC chip and the silicon-based IC chip are pasted on the inner surface (27 shown in figure 2) of the step cavity of the ceramic shell by adopting a pasting technology and are connected with the corresponding bonding pads in a bonding mode; the surface acoustic wave filter IC is pasted at the positions of embedded cavities (25 and 26 shown in figure 2) in the step cavity of the ceramic shell by adopting a pasting technology and is connected with corresponding bonding pads in a bonding mode; and interconnection of all signals and leading-out of signals are realized through high-density wiring in the ceramic surface-mounted shell.

The manufacturing process of the typical bonding interconnection condition of the surface acoustic wave switch filter module based on the RF-SiP is as follows:

firstly, based on glue bonding process or eutectic welding process, the gallium arsenide-based MMIC chip and the silicon-based IC chip are respectively installed at the corresponding bonding pads of the step cavity of the ceramic surface-mounted shell, and high-temperature curing is carried out.

Secondly, based on an adhesive bonding process, mounting the IC chip of the surface acoustic wave filter at an embedded cavity of the stepped cavity of the ceramic surface-mounted shell, and performing high-temperature curing;

then, through a bonding process, electrical interconnection inside the module is completed.

And finally, sealing and welding the metal cover plate on the top of the ceramic surface-mounted tube seat by adopting a parallel seam welding tube sealing process to form the RF-SiP integration technology-based two-channel surface acoustic wave switch filtering and amplifying module with the volume smaller than 12.6mm multiplied by 8mm multiplied by 1.8 mm.

In addition, another embodiment of the present invention further provides an electronic device, which includes the surface acoustic wave switch filter module based on the RF-SiP technology in the foregoing embodiment. The electronic equipment can be applied to a transceiving system and a frequency synthesizer system, and because the electronic equipment comprises the surface acoustic wave switch filtering module in the embodiment, and the structural size of the surface acoustic wave switch filtering module is greatly reduced, the electronic equipment can meet the requirements of a miniaturized receiver, particularly a multichannel miniaturized receiver.

While the invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.