阅读说明：本技术 一种连续沉积金刚石薄膜的方法及其设备 (Method and equipment for continuously depositing diamond film ) 是由 玄真武 李勇 张怡 何敬晖 于 2020-05-08 设计创作，主要内容包括：本发明涉及一种连续沉积金刚石薄膜的方法及其设备。包括预沉积室、沉积室、制品待取室及将预沉积室的基片从所述预沉积室依次传输至沉积室、制品待取室的基片传输装置,其中,所述预沉积室、沉积室、制品待取室依次设置且依次连接,预沉积室内充入基片沉积时所需气氛气体,在所述沉积室内当前热丝结构的作用下,依次对进入所述沉积室的多批次基片进行金刚石薄膜沉积,实现了在不更换热丝结构的前提下,多次金刚石膜的沉积,避免了现有技术中由于热丝消耗和中间更换热丝所导致的成本非必要提高问题,有利于金刚石薄膜的推广。(The invention relates to a method and equipment for continuously depositing a diamond film. The device comprises a pre-deposition chamber, a product chamber to be taken and a substrate transmission device for sequentially transmitting the substrate of the pre-deposition chamber to the deposition chamber and the product chamber to be taken, wherein the pre-deposition chamber, the deposition chamber and the product chamber to be taken are sequentially arranged and sequentially connected, the pre-deposition chamber is filled with atmosphere gas required during substrate deposition, and under the action of a current hot wire structure in the deposition chamber, diamond film deposition is sequentially carried out on multiple batches of substrates entering the deposition chamber.)

1. The equipment is characterized by comprising a pre-deposition chamber, a product chamber to be taken and a substrate transmission device for sequentially transmitting substrates of the pre-deposition chamber from the pre-deposition chamber to the deposition chamber and the product chamber to be taken, wherein the pre-deposition chamber, the deposition chamber and the product chamber to be taken are sequentially arranged and sequentially connected, atmosphere gas required during substrate deposition is filled in the pre-deposition chamber, the current batch of substrates in the pre-deposition chamber enter the deposition chamber under the transmission of the substrate transmission device, meanwhile, the substrates which are subjected to diamond film deposition in the deposition chamber are transmitted to the product chamber to be taken through the substrate transmission device, and the diamond film deposition is sequentially carried out on the multiple batches of substrates entering the deposition chamber under the action of a current hot wire structure in the deposition chamber.

2. The apparatus for continuously depositing a diamond film according to claim 1, wherein the pre-deposition chamber is in communication with the deposition chamber such that the pre-deposition chamber is in a gas atmosphere within the deposition chamber.

3. The apparatus for continuously depositing a diamond film according to claim 1, wherein the hot wire structure is a hot wire array structure.

4. The apparatus for continuously depositing the diamond film as claimed in claim 1, wherein a first isolation door is arranged between the pre-deposition chamber and the deposition chamber, and the communication and the isolation between the pre-deposition chamber and the deposition chamber are realized through the opening and the closing of the first isolation door;

and a second isolation door is arranged between the deposition chamber and the product chamber to be taken, and the deposition chamber is communicated with and isolated from the product chamber to be taken by opening and closing the second isolation door.

5. The apparatus for continuously depositing a diamond film according to any one of claims 1 to 4, wherein the substrate transfer means comprises a deposition cooling stage disposed in the deposition chamber, and the deposition cooling stage is connected to a cooling water inlet and a cooling water outlet, respectively.

6. The apparatus for continuously depositing diamond films according to claim 5, wherein the pre-deposition chamber, the deposition chamber and the article waiting chamber are all connected with a bottom pump for exhausting air in the corresponding chamber, wherein the deposition chamber is also connected with a working pump for maintaining the pressure in the chamber by pumping the air in the chamber of the deposition chamber during deposition.

7. The apparatus for continuously depositing a diamond film according to claim 6, wherein the pre-deposition chamber is connected to a local pump through a pre-deposition chamber suction valve, the deposition chamber is connected to the local pump through a deposition chamber suction valve, the article to be taken chamber is connected to the local pump through a to-be-taken chamber suction valve, and a gas filling valve is provided in a pipe between the pre-deposition chamber and the pre-deposition chamber suction valve and a pipe between the article to be taken chamber and the to-be-taken chamber suction valve, the deposition chamber is connected to the working pump through a control valve, wherein a front section of the pipe between the deposition chamber and the control valve is shared with a front section of the pipe between the deposition chamber and the deposition chamber suction valve.

8. The apparatus for continuously depositing diamond films according to claim 6, wherein the pre-deposition chamber, the deposition chamber and the product chamber to be taken are all connected with a methane and hydrogen mixing device through corresponding air inlet valves, and the methane and hydrogen mixing device is respectively connected with a methane gas containing device and a hydrogen gas containing device through flow meters.

9. The apparatus for continuously depositing a diamond film as set forth in claim 8, wherein the current substrate is transferred out of the deposition chamber when the thickness of the diamond film deposited on the substrate reaches a set thickness.

10. A method for continuously depositing diamond films, characterized in that a plurality of batches of substrates entering a deposition chamber are successively subjected to diamond film deposition without changing the current hot filament configuration in the deposition chamber by using the apparatus according to any one of claims 1 to 9.

Technical Field

The invention relates to a hot wire chemical deposition technology, in particular to a method and equipment for continuously depositing a diamond film.

Background

In general, the hot wire CVD technique is to heat the metal wire to a temperature above 2000 ℃, decompose hydrogen into atomic hydrogen in a normal deposition environment, decompose methane or hydrocarbon gas into various active hydrocarbon groups to participate in the deposition of a diamond film, and carbonize refractory metals into corresponding carbides, which have poor toughness and are very easy to break. Since the high temperature refractory metal wire for heating is usually used only once and cannot support the second use, the HFCVD method usually re-installs the wire after completing the first deposition and then performs the next deposition, but the time required for replacing the new wire is relatively long, so the consumption of the hot wire and the consumption of the time for replacing the hot wire in the middle result in the increase of the cost of the whole deposition process, which is not favorable for the development of the hot wire chemical deposition technology and the popularization of large-area diamond films, and the problem is in urgent need of improvement.

Disclosure of Invention

In order to solve the above technical problems, an object of the present invention is to provide a method of continuously depositing a diamond film and an apparatus thereof.

According to one aspect of the invention, the equipment for continuously depositing the diamond film comprises a pre-deposition chamber, a product chamber to be taken and a substrate transmission device for sequentially transmitting substrates in the pre-deposition chamber to the deposition chamber and the product chamber to be taken from the pre-deposition chamber, wherein the pre-deposition chamber, the deposition chamber and the product chamber to be taken are sequentially arranged and sequentially connected, atmosphere gas required for substrate deposition is filled in the pre-deposition chamber, the current batch of substrates in the pre-deposition chamber enter the deposition chamber under the transmission of the substrate transmission device, meanwhile, the substrates which are subjected to diamond film deposition in the deposition chamber are transmitted to the product chamber to be taken through the substrate transmission device, and the diamond film deposition is sequentially carried out on the multiple batches of substrates entering the deposition chamber under the action of the current hot wire structure in the deposition chamber.

The deposition of the diamond film is carried out for a plurality of times on the premise of not replacing the hot wire structure, thereby greatly saving the consumption of the hot wire and the time loss of replacing the hot wire in the middle.

Further, when the pre-deposition chamber is communicated with the deposition chamber, the gas atmosphere in the pre-deposition chamber is consistent with that in the deposition chamber.

Further, the hot wire structure is a hot wire array structure.

Further, the hot wire structure is arranged on a hot wire frame capable of moving up and down.

Furthermore, a first isolation door is arranged between the pre-deposition chamber and the deposition chamber, and the communication and the isolation between the pre-deposition chamber and the deposition chamber are realized through the opening and the closing of the first isolation door;

and a second isolation door is arranged between the deposition chamber and the product chamber to be taken, and the deposition chamber is communicated with and isolated from the product chamber to be taken by opening and closing the second isolation door.

Further, the substrate conveying device comprises a deposition cooling table, the deposition cooling table is arranged in the deposition chamber, and the deposition cooling table is respectively connected with a cooling water inlet and a cooling water outlet.

Furthermore, the pre-deposition chamber, the deposition chamber and the product chamber to be taken are all connected with a bottom pump for exhausting air in the corresponding chamber body, wherein the deposition chamber is also connected with a working pump for maintaining the pressure in the chamber by pumping the gas in the chamber of the deposition chamber during deposition. More specifically, the pre-deposition chamber is connected with a local pump through a pre-deposition chamber extraction valve, the deposition chamber is connected with the local pump through a deposition chamber extraction valve, the product chamber to be taken is connected with the local pump through a chamber to be taken extraction valve, and inflation valves are arranged on a pipeline between the pre-deposition chamber and the pre-deposition chamber extraction valve and a pipeline between the product chamber to be taken and the chamber to be taken, and are used for inflating air or nitrogen and the like into the chamber to reach a preset atmospheric pressure (such as one atmospheric pressure) before the chamber is opened. The deposition chamber is connected to the working pump by a regulating valve, wherein the front section of the conduit between the deposition chamber and the regulating valve is common to the front section of the conduit between the deposition chamber and the deposition chamber suction valve.

Furthermore, the pre-deposition chamber, the deposition chamber and the product chamber to be taken are connected with a methane and hydrogen mixing device through corresponding air inlet valves, and the methane and hydrogen mixing device is respectively connected with a methane gas containing device and a hydrogen gas containing device through flow meters.

Further, when the deposition thickness of the diamond film on the substrate reaches a set thickness, the current substrate is conveyed out of the deposition chamber. The set thickness is 0.5-10 μm. Through research, the deposition thickness of the diamond film on the substrate can reach 0.5-10 μm to meet the requirement of practical use, which means that the actually required deposition time of the diamond film is not long, and the loss of a hot wire structure in the prior art is used up in the process of excessive unnecessary diamond film deposition and preparation of a next deposition device, so that the loss required for actually using in the necessary diamond film deposition is very little.

According to another aspect of the present invention, there is provided a method for continuously depositing diamond films, which uses any one of the above-described apparatuses, and sequentially performs diamond film deposition on a plurality of batches of substrates introduced into a deposition chamber without replacing a current hot-wire structure in the deposition chamber.

Compared with the prior art, the invention has the following beneficial effects:

1. the continuous diamond film deposition equipment comprises a pre-deposition chamber, a deposition chamber and a product chamber to be taken, wherein a substrate in the deposition chamber is immediately moved out when reaching the deposition thickness of the diamond film, the substrate to be deposited in the pre-deposition chamber is immediately conveyed into the deposition chamber for deposition preparation, any loss of the current hot wire structure in the deposition chamber is not wasted, multiple times of diamond film deposition is realized on the premise of not replacing the hot wire structure, the problem of unnecessary cost increase caused by hot wire consumption and intermediate hot wire replacement in the prior art is solved, and the popularization of the diamond film is facilitated.

2. According to the method for continuously depositing the diamond film, disclosed by the invention, the diamond film deposition is sequentially carried out on a plurality of batches of substrates entering the deposition chamber under the condition that the current hot wire structure in the deposition chamber is not changed by applying the equipment, so that the hot wire consumption and the time for changing the hot wire in the middle are greatly saved.

Drawings

FIG. 1 is a schematic view showing the construction of an apparatus for continuously depositing a diamond film according to an embodiment;

FIG. 2 is a schematic view showing the positions of a driving chain, a roller, a sample tray and a deposition cooling stage according to the first embodiment;

in the figure, 1 is a predeposition chamber, 2 is a deposition chamber, 3 is a chamber to be taken, 4 is a substrate, 5 is a first isolation door, 6 is a second isolation door, 7 is a sample tray, 8 is a deposition cooling table, 9 is a transmission chain, 10 is a cooling water inlet, 11 is a cooling water outlet, 12 is a bottom pump, 13 is a working pump, 14 is a regulating valve, 15 is a sample bracket, 16 is a roller, 17 is an inflation valve, 18 is a predeposition chamber air inlet valve, 19 is a deposition chamber air inlet valve, 20 is a chamber to be taken air inlet valve, 21 is a methane and hydrogen mixing device, 22 is a flowmeter, 23 is a predeposition chamber air exhaust valve, 24 is a deposition chamber air exhaust valve, and 25.

Detailed Description

In order to better understand the technical scheme of the invention, the invention is further explained by combining the drawings and the specific embodiments in the specification.