Chemical vapor deposition apparatus
阅读说明:本技术 化学气相沉积设备 (Chemical vapor deposition apparatus ) 是由 丁欣 于 2018-09-11 设计创作,主要内容包括:本发明提供一种化学气相沉积设备。该设备包括反应腔,反应腔内包括多个用于承载衬底的基座,多个基座为圆盘形,工艺气体通过管路进入反应腔,多个基座中的每个基座彼此之间并列排布,各个基座的圆心在同一直线上;各个基座承载衬底的上表面彼此相互平行或在同一平面上;各个基座的转动轴线在同一平面上,各个基座相对于彼此独立地旋转;以及工艺气体沿各个基座的上表面,垂直于各个基座的各个圆心的连线方向流动。(The invention provides a chemical vapor deposition device. The equipment comprises a reaction cavity, wherein the reaction cavity comprises a plurality of bases for bearing substrates, the plurality of bases are disc-shaped, process gas enters the reaction cavity through a pipeline, the bases in the plurality of bases are arranged in parallel, and the circle centers of the bases are on the same straight line; the upper surfaces of the base bearing substrates are parallel to each other or on the same plane; the rotation axes of the bases are on the same plane, and the bases rotate independently relative to each other; and the process gas flows along the upper surface of each base and in a direction perpendicular to the connecting line of the circle centers of each base.)
1. A chemical vapor deposition device comprises a reaction chamber, wherein the reaction chamber comprises a plurality of bases for bearing substrates, the plurality of bases are disc-shaped, process gas enters the reaction chamber through a pipeline, and the chemical vapor deposition device is characterized in that,
each base in the plurality of bases is arranged in parallel, and the circle centers of the bases are on the same straight line;
the upper surfaces of the susceptors, which bear the substrates, are parallel to each other or on the same plane;
the rotation axes of the bases are on the same plane, and the bases rotate independently relative to each other; and the process gas flows along the upper surface of each susceptor in a direction perpendicular to a line connecting the centers of the circles of each susceptor.
2. The chemical vapor deposition apparatus according to claim 1, further comprising an inner box between the reaction chamber and the susceptor, the inner box having a shape including a rectangular parallelepiped; and
the reaction gas flows along the upper surface of the susceptor and in a direction relatively parallel to the upper surface and a short side of a rectangle in a cross section of the inner case.
3. The chemical vapor deposition apparatus of claim 1, wherein adjacent susceptors rotate in opposite directions to each other.
4. The chemical vapor deposition apparatus of claim 1, further comprising a mass flow meter that is common to the plurality of susceptors, the mass flow meter distributing the process gas to each of the susceptors; and
a regulating valve is provided on the line through which the process gas flows from the mass flow meter to the pedestal.
5. The chemical vapor deposition apparatus according to claim 1, further comprising a transfer chamber and a mechanical transfer arm, wherein the transfer chamber is polygonal, at least one side of the transfer chamber is provided with a transfer station for the substrate, and the other sides are provided with the reaction chamber; and
the mechanical transfer arm is positioned in the transfer chamber and transfers the substrate to the plurality of susceptors of the reaction chamber.
6. The chemical vapor deposition apparatus of claim 5, wherein the mechanical transfer arm is further configured to move along a line parallel to the center of each of the plurality of susceptors in the reaction chamber.
7. The chemical vapor deposition apparatus of claim 1, wherein a susceptor extension is filled between each of the susceptors, the material of the susceptor extension is the same as that of the susceptor, and the upper surface of the susceptor extension is coplanar with that of the susceptor.
8. The chemical vapor deposition apparatus of claim 7, wherein the upper surface of the susceptor extension portion comprises one or more of a shield, a protrusion, a recess, a guide fin, an anchor point.
9. The chemical vapor deposition apparatus of claim 7, wherein the upper surface of the susceptor extension portion and the upper surface of the susceptor have a height difference, and the height difference is adjustable manually or automatically by a mechanical structure.
10. The chemical vapor deposition apparatus of claim 2, wherein the inner box is made of a non-metallic high temperature and corrosion resistant material.
11. The chemical vapor deposition apparatus of claim 2, wherein a heat generating body is disposed between the reaction chamber and the inner box, the heat generating body comprising an infrared lamp source, a resistive heater, the resistive heater comprising a metal or graphite resistive heater.
12. The chemical vapor deposition apparatus of claim 11, wherein the metal resistive heater or the graphite resistive heater is driven by rf exciting the metal or the graphite with an induction coil to generate heat.
13. The chemical vapor deposition apparatus of claim 11, wherein the resistive heater is in the form of a spiral.
14. The chemical vapor deposition apparatus of claim 11, wherein the resistive heater further comprises at least one of:
a ring heater centered at the center of the circle of the base;
an arc-shaped heater taking the circle center of the base as a center;
the point-like heaters are distributed on a plurality of rings taking the circle center of the base as the center, or are distributed in a honeycomb manner by taking the circle center of the base as the center;
the wire heaters are vertically or parallelly distributed on the circle center connecting line of the base, or are distributed along the radial direction of the base.
15. The chemical vapor deposition apparatus according to claim 11, wherein a heat insulating material is provided between the exothermic body and the reaction chamber, the heat insulating material being a high emissivity material or a high reflectivity material.
Technical Field
The invention relates to the field of chemical vapor deposition, in particular to chemical vapor deposition equipment.
Background
Chemical Vapor Deposition (CVD) is a widely used thin film growth technique in the fields of semiconductors and flat panel displays. Vapor deposition techniques have a relatively low growth rate. Meanwhile, a large amount of non-metallic graphite, quartz, ceramic and other materials are used for manufacturing parts of the metal reaction cavity due to high reaction temperature. Limited by the processing techniques of such materials, the cost of such reaction chamber components is very high, resulting in high cost of film formation.
Disclosure of Invention
In order to solve the above problems, the present invention provides a novel chemical vapor deposition reaction apparatus with high sheet (substrate) throughput, high throughput, and high film formation uniformity.
According to one aspect of the invention, the chemical vapor deposition equipment comprises a reaction cavity, wherein the reaction cavity comprises a plurality of bases for bearing substrates, the plurality of bases are disc-shaped, process gas enters the reaction cavity through a pipeline, the bases are arranged in parallel, and the circle centers of the bases are on the same straight line;
the upper surfaces of the bearing substrates of the susceptors are parallel to each other or on the same plane;
the rotation axes of the bases are on the same plane, and the bases rotate independently relative to each other; and
the process gas flows along the upper surface of each susceptor in a direction perpendicular to a line connecting the centers of the respective susceptors.
Further, an inner box is arranged between the reaction cavity and the base, and the shape of the inner box comprises a cuboid; and a reaction gas flowing along the upper surface of the susceptor in a direction relatively parallel to the upper surface and a shorter side of the rectangle sectioned by the cross section of the inner case.
Further, the adjacent susceptors rotate in opposite directions to each other.
Further, the chemical vapor deposition apparatus further includes a mass flow meter using a common mass flow meter for the plurality of susceptors, the mass flow meter distributing the process gas to each of the susceptors; and arranging a regulating valve on a pipeline for the process gas to flow from the mass flow meter to the base.
Furthermore, the chemical vapor deposition equipment also comprises a transmission cavity and a mechanical transmission arm, wherein the transmission cavity is polygonal, at least one side of the transmission cavity is provided with a transfer station of the substrate, and the rest sides are provided with reaction cavities; and a mechanical transfer arm positioned in the transfer chamber for transferring the substrate to the plurality of susceptors of the reaction chamber.
Further, the mechanical transfer arm is configured to move along a line parallel to the respective centers of the circles of the respective susceptors in the reaction chamber.
Furthermore, base extension parts are filled among the bases, the material of the base extension parts is the same as that of the bases, and the upper surfaces of the base extension parts and the upper surfaces of the bases are in the same plane.
Further, the upper surface of the base extension includes one or more of a shield, a protrusion, a recess, a guide fin, and an anchor point.
Further, the upper surface of the base extension part and the upper surface of the base have a height difference, and the height difference can be manually or automatically adjusted through a mechanical structure
Further, the inner box is made of a non-metal high-temperature-resistant and corrosion-resistant material.
Furthermore, a heating body is arranged between the reaction cavity and the inner box, the heating body comprises an infrared lamp source and a resistance type heater, and the resistance type heater comprises a metal or graphite resistance type heater.
Furthermore, the driving mode of the metal resistance type heater or the graphite resistance type heater also comprises the step of exciting metal or graphite by radio frequency of the induction coil so that the metal resistance type heater or the graphite resistance type heater generates heat.
Further, the resistive heater is spiral-shaped.
Further, the resistive heater further comprises at least one of:
a ring heater centered at the center of the base;
an arc heater using the center of the circle of the base as the center;
the point heaters are distributed on a plurality of rings taking the circle center of the base as the center or distributed in a honeycomb manner by taking the circle center of the base as the center;
and the wire heaters are vertically or parallelly distributed on the connection line of the circle centers of the bases, or the wire heaters are distributed along the radial direction of the bases.
Further, a heat insulating material is provided between the heating element and the reaction chamber.
Compared with the prior art, the implementation mode of the invention has the main differences and the effects that:
the chemical vapor deposition apparatus of the embodiment of the invention arranges two to more disk susceptors at low cost, and the disk susceptors can share a gas flow controller or fewer heaters through pipelines. The cost of the reaction cavity and other equipment matched with the reaction cavity can be greatly reduced while more disc bases are subjected to film formation; thereby reducing the manufacturing cost of the whole set of equipment. Meanwhile, the consumption of reaction gas, heating energy and the like is reduced, so that the consumption of film-forming consumables is reduced. And the film forming uniformity same as that of a single-piece disc base can be achieved while realizing the low-cost proposal.
Drawings
FIG. 1 shows a top view of a chemical vapor deposition apparatus according to an embodiment of the invention.
FIG. 2 is a schematic connection diagram of a mass flow meter of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 3 is a schematic vertical sectional view showing a shape and arrangement of a heat generating body of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 4 is a schematic top view showing a shape and arrangement of a heat generating body of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 5 is a schematic top view of another heater of a chemical vapor deposition apparatus according to an embodiment of the invention.
FIG. 6 is a schematic vertical sectional view showing the shape and arrangement of another heater of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 7 is a schematic top view of another heater of a chemical vapor deposition apparatus according to an embodiment of the invention.
FIG. 8 is a schematic view showing a configuration of an arc-shaped heat generating body of the chemical vapor deposition apparatus according to the embodiment of the present invention.
FIG. 9 shows a schematic view of a complete disk spiral heater of a chemical vapor deposition apparatus according to an embodiment of the invention.
FIG. 10 shows a sectioned schematic view of a complete disk spiral heater of a chemical vapor deposition apparatus according to an embodiment of the invention.
FIG. 11 is a schematic view illustrating a chemical vapor deposition apparatus according to an embodiment of the present invention in which an insulated container is provided between a heat source and a reaction chamber.
FIG. 12 is a schematic view illustrating a thermal insulation layer disposed between a heat source and a reaction chamber in a chemical vapor deposition apparatus according to an embodiment of the present invention.
Fig. 13 is a schematic view showing an in-line configuration of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 14 is a schematic view showing another line configuration of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 15 shows a simplified three-dimensional schematic view of a chemical vapor deposition apparatus according to an embodiment of the invention.
FIG. 16 shows a schematic view of a chemical vapor deposition system according to an embodiment of the invention.
Detailed Description
In order to make the purpose and technical solution of the embodiments of the present invention clearer, the technical solution of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
In the present invention, the reaction chamber includes a metallic vacuum, low pressure, normal pressure or high pressure vessel, and also includes the above-mentioned vessels and nozzles for producing a material suitable for thermal chemical vapor deposition, graphite susceptor, quartz or ceramic parts, heating devices, and the like. In a broader sense, the reaction chamber may also include piping, valves, mass flow meters, electrical circuits, etc. for supplying the reaction gas, and the present invention is not limited thereto.
In the present invention, the susceptor is typically made of a high temperature resistant material such as metal, ceramic, quartz, high purity graphite, or carbide coated graphite, and the like. The susceptor may comprise a rotatable disk carrying a silicon wafer or other substrate, or may comprise a rotatable disk carrying a silicon wafer or other substrate and other non-rotatable portions outside the disk.
Fig. 1 shows a top view of a chemical vapor deposition apparatus according to an embodiment, in which 101 is a substrate to be processed, 102 is a disk susceptor, 103 is a susceptor extension, 104 is an inner box, and 105 is a reaction chamber.
According to embodiments of the present invention, a plurality of
As an example, the
According to the embodiment of the invention, the centers of the disk bases 102 are on the same straight line, and the upper surfaces of the disk bases 102 (or the
As another example, when the number of the disk bases 102 is greater than three, the center of one of the three or
As shown in fig. 1,
Further, in the extended plane of the upper surface of these
Next, fig. 2 shows a schematic connection diagram of the mass flow meter, wherein 301 is a gas source (gas cylinder, gas holder, etc.) for providing process gas, 302 is a mass flow meter for controlling the flow rate of gas, and 303 is a throttle valve. As shown in fig. 2, a common
According to embodiments of the present invention, the
In the
Since the
A heating element (heat source) is disposed between the
Referring to fig. 3 to 10, the shape and arrangement of the heat generating body (heat source) in the embodiment of the present invention are described.
In one example, the top line heat source is combined with the bottom arc heat source, the shape and arrangement of the heating element (heat source) are as shown in fig. 3 and 4, the
In the above-described exemplary variation, the top linear heat source is combined with the bottom radial linear heat source, and the shape and arrangement of the heat generating bodies (heat sources) are as shown in fig. 5, wherein the
In another example, the top line heat source and the bottom line heat source are perpendicular to each other, and the shape and arrangement of the heat generating body (heat source) are as shown in fig. 6 and 7, in which the
According to the embodiment of the present invention, the heat-generating
As another example, as shown in fig. 9, the heating element has a spiral shape, and the spiral forms a circular ring or a complete circle, and the center of the circular ring or the circle is the same as the center of the
Wherein the spiral resistance heater has a great effect on higher temperature processes. Because of the high temperature process, it is common practice to use graphite or graphite coated materials for making resistive heaters. Since graphite heaters are typically cut directly from a large block of graphite material, and graphite lacks flexibility, it is difficult to form a structure similar to a spring to absorb the stress caused by thermal expansion during temperature rise. The graphite can be cut by a simple machine tool to form a spiral line structure. The spiral line structure can be simply analogized to a circumference with gradually enlarged radius from the center; compared with a true circle, the helical structure can obtain 10 times or even more of the circumference length; and stress can be uniformly released to each length of the spiral line when thermal expansion occurs, thereby minimizing stress per unit length. Thereby improving the service life of the heater, improving the stability of the equipment and reducing the cost.
In addition, the heating element may be a point heat source or a smaller line or plane heat source distributed on a plurality of rings with the center of the circle of the
Further, the heating elements may be connected in series or in parallel as necessary. After the plurality of heaters are connected in series and in parallel, the heaters are separately and independently controlled with other heaters connected in series and in parallel, so that the temperature on the
Specifically, a single wire heater parallel to the connection line of the centers of the
The arrangement of the above-mentioned heaters, in several combinations, is described as follows:
a wire heater (i.e., a long strip of heat source) is used. Wherein, a line heater parallel to the connecting line of the circle centers of the disc bases 102 is arranged above the disc, and a line heater vertical to the connecting line of the circle centers of the disc bases 102 is arranged below the disc. Or on the contrary, a line heater perpendicular to the line connecting the centers of the circle of the
The heat of the heater may be directed through an
It can be understood that the temperature of the substrate can be detected by temperature measuring devices such as infrared sensors or thermocouples, and the power of different heating bodies/heat sources can be controlled according to the process requirements, i.e. the temperature of the substrate is uniform by zone control.
According to an embodiment of the present invention, as shown in fig. 11 and 12, a high reflectivity (reflectivity) or high emissivity (emissivity)
Fig. 13 and 14 show configurations of the pipeline of the present invention, according to an embodiment of the present invention. In fig. 12 and 13, 401 is a mechanical transfer arm for transferring a substrate, 402 is a cassette for storing a substrate, and 403 is a guide rail for linear movement of the mechanical transfer arm.
As an example, polygonal transfer chambers may be provided, the polygons being 3, 4, 5, 6, 7 or at most 8-sided. The
As shown in fig. 13, the transfer chamber has a quadrilateral shape, a
As shown in fig. 14, the centers of the plurality of
A chemical vapor deposition process system including a chemical vapor deposition apparatus according to an embodiment of the present invention will be briefly described with reference to fig. 15 and 16. FIG. 15 is a three-dimensional model created when designing an embodiment of the present invention. The output from the three-dimensional model to FIG. 15 is simplified, and only the
FIG. 16 shows a schematic connection diagram of a chemical vapor deposition process system. 501, a control unit of the device comprises an industrial personal computer, a single chip microcomputer, a programmable PLC, an Ethernet controller, an image man-machine interface and the like, and controls other units such as a reaction cavity and the like; 502 is a gas module, including a gas holder, a mass flow meter, various gas circuit valves, a gas distributor, etc.; 503 is a mechanical control unit for rotating and lifting the base; 504 is a substrate handling system, such as a robot, cassette control system, etc.; 505 is a heater power supply silicon controlled rectifier or IGBT or other power module, a temperature measurement sensor, a temperature control algorithm unit and the like; and 506 is other auxiliary units such as safety interlocks, control mechanisms for pumps (under reduced pressure process), heat sinks, etc.
In summary, the present invention can arrange two or more disk susceptors at low cost, and the gas flow controller or less heaters can be shared between the disk susceptors through a pipeline. The film forming device can form films on a plurality of disc bases and simultaneously greatly reduce the cost of a reaction cavity, a gas control loop, a heater power supply, a substrate conveying system and the like which are matched with the reaction cavity; thereby reducing the manufacturing cost of the whole set of system equipment. Meanwhile, the consumption of reaction gas, heating energy and the like is reduced, so that the consumption of film-forming consumables is reduced. And the film forming uniformity same as that of a single-piece disc base can be achieved while realizing the low-cost proposal.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments described herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the claims, any of the claimed embodiments may be used in any combination.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention can be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed first terminal device. In the unit claims enumerating several terminal devices, several of these terminal devices may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
While various aspects and embodiments have been disclosed herein, other aspects and embodiments will be apparent to those skilled in the art. The various aspects and embodiments disclosed herein are for purposes of illustration and are not intended to be limiting, with the true scope being indicated by the following claims, along with the full scope of equivalents to which such claims are entitled. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting.
- 上一篇:一种医用注射器针头装配设备
- 下一篇:一种化学水浴沉积装置