阅读说明：本技术 一种高纯度制作氮化硼的制备方法 (Preparation method for preparing boron nitride with high purity ) 是由 富裕 于 2018-08-06 设计创作，主要内容包括：本发明公开了一种高纯度制作氮化硼的制备方法,将H3BO3十五份和C3N3(NH2)3份为原料,导入犁刀式混合机,通电粉碎并混合,取出混合物,高温加热烧结成块,洗涤脱水,包装成品,在整个的反应中我们使用了BCl3(g)+NH3(g)=BN(s)+3HCl(g)的化学式,其中不适用价格高昂的硼粉和氮气,减少了成本,而且在反应发生的过程中没有氨气的产生,减少空气的污染,并且方便于整个生产流程的管理。(The invention discloses a preparation method for preparing high-purity boron nitride, which comprises the steps of introducing fifteen parts of H3BO3 and 3 parts of C3N3 (NH 2) as raw materials into a colter type mixer, electrifying, crushing and mixing, taking out a mixture, heating and sintering at high temperature to form blocks, washing, dehydrating and packaging a finished product, wherein a chemical formula of BCl3(g) + NH3(g) = BN(s) +3HCl (g) is adopted in the whole reaction, high-price boron powder and nitrogen are not suitable, the cost is reduced, no ammonia gas is generated in the reaction process, the air pollution is reduced, and the management of the whole production flow is convenient.)

1. A preparation method for preparing boron nitride with high purity is characterized in that; fifteen parts of H3BO3 and 3 parts of C3N3 (NH 2) are taken as raw materials, introduced into a colter type mixer, electrified, crushed and mixed, taken out of the mixture, heated and sintered into blocks at high temperature, washed, dehydrated and packaged into finished products.

2. The method for preparing high purity boron nitride according to claim 1, wherein; fifteen parts of H3BO3 and 3 parts of C3N3 (NH 2) were introduced into a coulter mixer and energized for 4 hours.

3. The method for preparing high purity boron nitride according to claim 1, wherein; the resulting material was placed in an electric oven at 300 ℃ for 24 hours before being pulverized by energization.

4. The method for preparing high purity boron nitride according to claim 1, wherein; pulverizing under power, mixing, pulverizing, and sieving to obtain granule.

5. The method for preparing high purity boron nitride according to claim 1, wherein; when the powder is electrified, sintered and mixed, the powder is transferred into an intermediate frequency furnace, the temperature in the furnace is raised to 1800 ℃, and the electrifying time is longer than 12 hours, so that the powder is sintered.

6. The method for preparing high purity boron nitride according to claim 1, wherein; when the mixture is electrified, crushed and mixed, the sinter is crushed, washed for 5 times by water, transferred into a steam oven and kept for 24 hours at the temperature of 180 ℃.

Technical Field

The invention is applied to the industrial field, in particular to a preparation method for preparing boron nitride with high purity.

Background

Boron nitride is produced more than 100 years ago, the earliest application is hexagonal boron nitride as a high-temperature lubricant, the development is rapidly advanced from China, the research of BN powder is started in 1963, the research is successfully carried out in 1966, and the boron nitride is put into production and applied to the industry and the top technology of China in 1967. The boron nitride product has the characteristics of high temperature resistance, no adhesion, corrosion resistance, and strong heat dissipation and heat conduction. Is not wet with aluminum water, and can provide comprehensive protection for the surface of materials directly contacted with molten aluminum, magnesium, zinc alloy and molten slag thereof. The product is hard and can be made into high-speed cutting tools and drill bits for geological exploration and oil drilling. The shape is different, and the material can be used as a high-temperature, high-voltage, insulating and heat radiating component. And packaging materials for protection against neutron radiation. Can be used for special electrolytic and resistance materials in a high-temperature state. The high-temperature-resistant composite material is widely applied to insulators of high-voltage high-frequency electricity and plasma arcs, coatings of automatic welding high-temperature-resistant supports, materials of high-frequency induction furnaces, solid-phase admixtures of semiconductors, structural materials of atomic reactors, packaging materials for preventing neutron radiation, radar transmission windows, media of radar antennas, compositions of rocket engines and the like, the traditional preparation method is high in cost, ammonia gas is emitted in the air, and the maintenance and management of site construction are not facilitated.

Disclosure of Invention

The present invention is directed to a method for preparing high purity boron nitride, which solves the above problems of the prior art.

In order to achieve the purpose, the invention provides the following technical scheme: a process for preparing high-purity boron nitride includes such steps as mixing H3BO3 fifteen parts and C3N3 (NH 2) 3 parts in a colter mixer, electric pulverizing, mixing, high-temp heating for sinter, washing for dewatering, and packing.

Preferably, fifteen parts of H3BO3 and 3 parts of C3N3 (NH 2) are used as raw materials, and the raw materials are introduced into a plow mixer and energized for 4 hours.

Preferably, the material formed in the process is placed in an electric oven at 300 ℃ for 24 hours before being pulverized by energization.

Preferably, the mixture is pulverized and sieved after the mixture is pulverized and mixed by energization to form granules.

Preferably, when the powder is mixed by electrifying, sintering and transferring the powder into an intermediate frequency furnace, wherein the temperature in the furnace is raised to 1800 ℃, and the electrifying time is longer than 12 hours, so that the powder is sintered.

Preferably, the sinter is pulverized by electrifying and mixed, washed with water for 5 times, and then transferred to a steam oven at 180 ℃ for 24 hours.

Compared with the prior art, the invention has the beneficial effects that: the chemical formula of BCl3(g) + NH3(g) = BN(s) +3HCl (g) is used in the whole reaction, high-price boron powder and nitrogen are not suitable, the cost is reduced, ammonia gas is not generated in the reaction process, the air pollution is reduced, and the management of the whole production flow is convenient.

Drawings

FIG. 1 is a flow chart of the present invention.

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced otherwise than as specifically described herein, and thus the scope of the present invention is not limited by the specific embodiments disclosed below.

Referring to fig. 1, the present invention provides a technical solution: a preparation method for preparing boron nitride with high purity is characterized in that; fifteen parts of H3BO3 and 3 parts of C3N3 (NH 2) are taken as raw materials, introduced into a colter type mixer, electrified, crushed and mixed, taken out of the mixture, heated and sintered into blocks at high temperature, washed, dehydrated and packaged into finished products.

Specifically, fifteen parts of H3BO3 and 3 parts of C3N3 (NH 2) are used as raw materials, and the raw materials are introduced into a colter type mixer to be electrified and operated for 4 hours, so that the raw materials can be sufficiently mixed, the reaction of the raw materials is more rapid and sufficient, the raw materials are saved, the reaction speed is improved, and the efficiency is increased.

Specifically, the substance formed before the electrification and pulverization is placed in an electric oven at 300 ℃ for 24 hours, so that the substance can dehydrate the internal moisture before entering a washing and dehydration stage to reach the state of a semi-finished product, and the product can be rapidly molded by placing and heating

Specifically, the mixture is pulverized and sieved after being pulverized and mixed by energization to be granulated. The volume and particles during electrification are reduced, the related chemical reaction during electrification is accelerated, the efficiency and the yield are improved, and the purity is improved.

Specifically, when the powder is electrified, sintered and mixed, the powder is transferred to an intermediate frequency furnace, the temperature in the furnace is raised to 1800 ℃ at the moment, the electrifying time is longer than 12 hours, the powder is sintered, and the occurrence rate of reaction is increased and the purity is improved when the product is sintered in the same process.

Specifically, when the materials are electrified, crushed and mixed, the sinter is crushed, washed for 5 times by water, transferred into a steam oven, kept at 180 ℃ for 24 hours, and washed for multiple times to remove corresponding impurities and improve the corresponding purity of the product.

The working principle is as follows: in order to solve the defects in the prior art, the invention adopts mixed boric acid and melamine to produce according to a chemical reaction equation of BCl3(g) + NH3(g) = BN(s) +3HCl (g) according to a specific proportion, a colter mixer is used for mixing the boric acid and the melamine to produce a chemical reaction during production, and high-temperature treatment is further carried out, so that the conversion rate of boron nitride is greatly improved, the cost is reduced, no ammonia gas is generated during the reaction, the air pollution is reduced, and the management of the whole production flow is convenient.

In the description of the present specification, the terms "connect", "mount", "fix", and the like are to be understood in a broad sense, for example, "connect" may be a fixed connection, a detachable connection, or an integral connection; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description herein, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.