阅读说明：本技术 应用于还原炉上的陶瓷绝缘环结构 (Ceramic insulation ring structure applied to reduction furnace ) 是由 梁瑞锋 赵小飞 梁国东 邹分红 刘双银 胡正辉 张龙刚 郑进 缪中祥 于 2019-10-31 设计创作，主要内容包括：本发明公开了应用于还原炉上的陶瓷绝缘环结构,解决现有技术爬电距离短、以及易炸裂的问题。本发明包括左半绝缘环和右半绝缘环,左半绝缘环和右半绝缘环以相互间的贴合面为对称面对称分布,左半绝缘环和右半绝缘环的结构相同,均包括绝缘半环结构和凸出于绝缘半环结构的绝缘凸半环结构,绝缘凸半环结构的内径与绝缘半环结构的内径相同,绝缘半环结构的外径大于绝缘凸半环结构外径,绝缘半环结构和绝缘凸半环结构的外表面粗糙度小于Ra0.2,左半绝缘环和右半绝缘环均采用高纯度氧化铝通过冷等静压成型工艺制成。本发明结构简单、设计科学合理。可有效解决现有磁环爬电距离短和易炸裂的问题,最终实现还原炉缺相减少,提升还原炉产量和降低电耗。(The invention discloses a ceramic insulating ring structure applied to a reduction furnace, which solves the problems of short creepage distance and easy cracking in the prior art. The invention comprises a left semi-insulating ring and a right semi-insulating ring, wherein the left semi-insulating ring and the right semi-insulating ring are symmetrically distributed by taking a mutual binding surface as a symmetrical surface, the left semi-insulating ring and the right semi-insulating ring have the same structure and respectively comprise a semi-insulating ring half structure and a semi-insulating convex semi-ring structure protruding out of the semi-insulating ring half structure, the inner diameter of the semi-insulating convex semi-ring structure is the same as the inner diameter of the semi-insulating ring half structure, the outer diameter of the semi-insulating ring half structure is larger than the outer diameter of the semi-insulating ring half structure, the roughness of the outer surfaces of the semi-insulating ring half structure and the semi-insulating ring half structure is smaller than Ra0.2, and the left. The invention has simple structure and scientific and reasonable design. The problem that the existing magnetic ring is short in creepage distance and easy to crack can be effectively solved, the reduction of phase loss of the reduction furnace is finally realized, the yield of the reduction furnace is improved, and the power consumption is reduced.)

1. Be applied to ceramic insulation ring structure on reducing furnace, its characterized in that: comprises a left half insulating ring (1) and a right half insulating ring (2) matched with the left half insulating ring (1), the left half insulating ring (1) and the right half insulating ring (2) are symmetrically distributed by taking the joint surfaces as symmetrical surfaces, the left semi-insulating ring (1) and the right semi-insulating ring (2) have the same structure and respectively comprise an insulating semi-ring structure (3) and an insulating convex semi-ring structure (4) protruding out of the insulating semi-ring structure (3), the inner diameter of the insulation male semi-ring structure (4) is the same as the inner diameter of the insulation semi-ring structure (3), the outer diameter of the insulating semi-ring structure (3) is larger than that of the insulating convex semi-ring structure (4), the roughness of the outer surfaces of the insulating semi-ring structure (3) and the insulating convex semi-ring structure (4) is less than Ra0.2, the left half insulating ring (1) and the right half insulating ring (2) are both made of high-purity aluminum oxide through a cold isostatic pressing process.

2. The ceramic insulation ring structure applied to the reduction furnace according to claim 1, wherein: the left half insulating ring (1) and the right half insulating ring (2) are both made of high-purity aluminum oxide with the purity of more than 95% through a cold isostatic pressing process.

3. The ceramic insulation ring structure applied to the reduction furnace according to claim 2, wherein: the insulation semi-ring structure (3) and the insulation convex semi-ring structure (4) are of an integrated structure.

4. The ceramic insulation ring structure applied to the reduction furnace according to claim 3, wherein: the inner diameters of the insulating semi-ring structure (3) and the insulating convex semi-ring structure (4) are both 72 +/-0.5 mm.

5. The ceramic insulation ring structure applied to the reduction furnace according to claim 4, wherein: the outer diameter of the insulating semi-ring structure (3) is 110 +/-1.0 mm, and the outer diameter of the insulating convex semi-ring structure (4) is 82.5 +/-1.0 mm.

6. The ceramic insulation ring structure applied to the reduction furnace according to claim 5, wherein: the thickness of the insulating semi-ring structure (3) is 12 +/-0.2 mm, and the thickness of the insulating convex semi-ring structure (4) is 2 +/-0.2 mm.

7. The ceramic insulation ring structure applied to the reduction furnace according to claim 6, wherein: the rupture strength of the left half insulating ring (1) and the right half insulating ring (2) is more than or equal to 300MPa, and the volume density is more than or equal to 3.65g/cm³Dielectric constant of 9-10.5 at 10GHz and 20 deg.C, and volume resistivity of 10 or more at 500 deg.C⁸Omega cm, breakdown strength not less than 20KV/mm, and linear expansion coefficient of 6.5-8X 10 at 20-800 deg.C^-6/℃。

8. The ceramic insulator ring structure applied to the reduction furnace as set forth in claim 7, wherein: chemical stability of the left half insulating ring (1) and the right half insulating ring (2): 1:9HCL is less than or equal to 7.0mg/cm²、10％NaOH≤0.15mg/cm²。

Technical Field

The invention relates to a ceramic insulating ring structure applied to a reduction furnace.

Background

Siemens process is the mainstream method for the preparation of solar grade polysilicon feedstock. The polysilicon reducing furnace is a special device for refining the polysilicon rod. The method for starting the breakdown of the silicon core of the polysilicon reduction furnace at home and abroad is changed from the prior heating method of an electric radiation heater into a high-voltage starting method and a low-voltage starting method (also called preheating starting). The low-voltage starting mode is that the silicon core in the polysilicon reducing furnace is preheated to more than 300 ℃ by the heating device, and the resistance of the silicon core is reduced at the moment and can be broken down under the condition of applying lower voltage. However, the low-pressure starting mode is easy to pollute silicon materials, and the processing efficiency is not high. The high-voltage starting mode is that high voltage (generally more than 4.5kV) is applied to two ends of a silicon core of the polycrystalline silicon reduction furnace to enable the silicon core to be a conductor with low resistance, so that the conduction current speed is increased, the internal temperature of the silicon core is rapidly increased, the starting time is greatly shortened, the production efficiency is improved, and the energy consumption is reduced. Therefore, the high-voltage starting mode is the current mainstream silicon core electrode breakdown mode. However, the insulation requirements for various parts in the polysilicon reduction furnace become more strict and strict due to the adoption of a high-voltage starting mode.

The silicon core electrode body mainly comprises an electrode body, a heating graphite head silicon core and an electrode seat. When the silicon core of the polysilicon reduction furnace adopts a high-voltage starting mode, the insulating magnetic ring made of ceramic materials is adopted between the electrode body and the electrode seat for insulating treatment due to large voltage. The insulating magnetic ring is positioned in a gap of the electrode body close to one section of the heating graphite head silicon core, and the upper end of the insulating magnetic ring covers the surface of the inner chassis of the reducing furnace. In the production of polysilicon, in order to take into account the quality and efficiency of polysilicon production, the temperature of the reduction reaction in the polysilicon reduction furnace is neither higher or lower, and is preferably 1080-1200 ℃. In order to obtain single-furnace polysilicon yield, the reduction reaction time in the polysilicon reduction furnace and the feeding temperature of the reduction reaction need to be increased. Therefore, as an insulating magnetic ring in a silicon core electrode body, sufficient high voltage resistance and thermal stability need to be ensured under severe working conditions such as long time, strong voltage (greater than 4.5kV), higher temperature and the like. Otherwise, after long-time high-temperature and high-voltage operation, the insulating magnetic ring is easy to lose efficacy, thermal damage or electric breakdown occurs, and production accidents are caused.

Disclosure of Invention

The technical problem to be solved by the invention is as follows: the ceramic insulating ring structure applied to the reducing furnace is provided, and the problems of short creepage distance and easiness in cracking in the prior art are solved.

In order to achieve the purpose, the technical scheme adopted by the invention is as follows:

be applied to ceramic insulator ring structure on reducing furnace, including left half insulator ring and with the right half insulator ring that left side half insulator ring cooperation was used, left side half insulator ring with right half insulator ring uses binding face between each other as the plane of symmetry symmetric distribution, left side half insulator ring with right half insulator ring's structure is the same, all includes insulating semi-ring structure and protrusion in insulating convex semi-ring structure of insulating semi-ring structure, insulating convex semi-ring structure's internal diameter with insulating semi-ring structure's internal diameter is the same, insulating semi-ring structure's external diameter is greater than insulating convex semi-ring structure external diameter, insulating semi-ring structure with insulating convex semi-ring structure's roughness is less than Ra0.2, left side half insulator ring with right half insulator ring all adopts high-purity aluminium oxide to make through cold isostatic pressing technology.

Further, the left half insulating ring and the right half insulating ring are both made of high-purity aluminum oxide with the purity of more than 95% through a cold isostatic pressing process.

Further, the insulation semi-ring structure and the insulation male semi-ring structure are of an integrated structure.

Further, the inner diameters of the insulating semi-ring structure and the insulating convex semi-ring structure are both 72 +/-0.5 mm.

Further, the outer diameter of the insulating semi-ring structure is 110 +/-1.0 mm, and the outer diameter of the insulating convex semi-ring structure is 82.5 +/-1.0 mm.

Further, the thickness of the insulating semi-ring structure is 12 +/-0.2 mm, and the thickness of the insulating convex semi-ring structure is 2 +/-0.2 mm.

Furthermore, the flexural strength of the left semi-insulating ring and the right semi-insulating ring is more than or equal to 300MPa, and the volume density is more than or equal to 3.65g/cm³Dielectric constant of 9-10.5 at 10GHz and 20 deg.C, and volume resistivity of 10 or more at 500 deg.C⁸Omega cm, breakdown strength not less than 20KV/mm, and linear expansion coefficient of 6.5-8X 10 at 20-800 deg.C^-6/℃。

Further, the chemical stability of the left and right semi-insulating rings: 1:9HCL is less than or equal to 7.0mg/cm²、10％NaOH≤0.15mg/cm²。

Compared with the prior art, the invention has the following beneficial effects:

the invention has simple structure, scientific and reasonable design and convenient use. The problem that the existing magnetic ring is short in creepage distance and easy to crack can be effectively solved, the reduction of phase loss of the reduction furnace is finally realized, the yield of the reduction furnace is improved, and the power consumption is reduced.

The invention comprises a left half insulating ring and a right half insulating ring which are made of high-purity alumina with the purity of more than 95 percent through a cold isostatic pressing process, have the same structure and are symmetrically distributed by taking the joint surfaces as symmetrical surfaces, and respectively comprise an integrated semi-insulating ring structure and a convex semi-insulating ring structure, wherein the left half insulating ring and the right half insulating ring comprising the semi-insulating ring structure and the convex semi-insulating ring structure have the following properties: the breaking strength is more than or equal to 300MPa, and the volume density is more than or equal to 3.65g/cm³Dielectric constant of 9-10.5 at 10GHz and 20 deg.C, and volume resistivity of 10 or more at 500 deg.C⁸Omega cm, breakdown strength not less than 20KV/mm, and linear expansion coefficient of 6.5-8X 10 at 20-800 deg.C^-6V DEG C, the left semi-insulating ring and theChemical stability of right insulating ring half: 1:9HCL is less than or equal to 7.0mg/cm²、10％NaOH≤0.15mg/cm². Thus, the creepage distance is long, and meanwhile, the cable is not easy to crack.

Drawings

FIG. 1 is a schematic view of the structure of the present invention.

Fig. 2 is a side view of the left or right insulator ring halves of the present invention.

Wherein, the names corresponding to the reference numbers are:

1-left half insulating ring, 2-right half insulating ring, 3-insulating semi-ring structure and 4-insulating convex semi-ring structure.

Detailed Description

The present invention will be further described with reference to the following description and examples, which include but are not limited to the following examples.

As shown in figures 1 and 2, the ceramic insulating ring structure applied to the reduction furnace provided by the invention has the advantages of simple structure, scientific and reasonable design and convenience in use. The problem that the existing magnetic ring is short in creepage distance and easy to crack can be effectively solved, the reduction of phase loss of the reduction furnace is finally realized, the yield of the reduction furnace is improved, and the power consumption is reduced. The insulation structure comprises a left half insulation ring 1 and a right half insulation ring 2 matched with the left half insulation ring 1 for use, wherein the left half insulation ring 1 and the right half insulation ring 2 are symmetrically distributed by taking a joint surface between the left half insulation ring 1 and the right half insulation ring 2 as a symmetrical surface, the left half insulation ring 1 and the right half insulation ring 2 have the same structure and respectively comprise an insulation semi-ring structure 3 and an insulation convex semi-ring structure 4 protruding out of the insulation semi-ring structure 3, and the insulation semi-ring structure 3 and the insulation convex semi-ring structure 4 are of an integrated structure. The internal diameter of the insulating convex semi-ring structure 4 is the same as the internal diameter of the insulating semi-ring structure 3, the external diameter of the insulating semi-ring structure 3 is larger than the external diameter of the insulating convex semi-ring structure 4, the external surface roughness of the insulating semi-ring structure 3 and the external surface roughness of the insulating convex semi-ring structure 4 are smaller than Ra0.2, the left half insulating ring 1 and the right half insulating ring 2 are made of high-purity alumina through a cold isostatic pressing process, and preferably made of the high-purity alumina with the purity of more than 95% through the cold isostatic pressing process.

The inner diameters of the semi-insulating ring structure 3 and the semi-insulating ring structure 4 are both 72 +/-0.5 mm. The outer diameter of the insulating semi-ring structure 3 is 110 +/-1.0 mm, and the outer diameter of the insulating convex semi-ring structure 4 is 82.5 +/-1.0 mm. The thickness of the insulating semi-ring structure 3 is 12 +/-0.2 mm, and the thickness of the insulating convex semi-ring structure 4 is 2 +/-0.2 mm.

The flexural strength of the left half insulating ring 1 and the right half insulating ring 2 is more than or equal to 300 MPa; the volume density is more than or equal to 3.65g/cm³(ii) a The dielectric constant is 9-10.5 at 10GHz and 20 ℃; the volume resistivity is more than or equal to 10 at 500 DEG C⁸Omega cm; the breakdown strength is more than or equal to 20 KV/mm; linear expansion coefficient of 6.5-8 x 10 at 20-800 deg.C^-6/℃；

Chemical stability: 1:9HCL is less than or equal to 7.0mg/cm²、10％NaOH≤0.15mg/cm²。

The outer edge of the semi-insulating ring structure, the semi-insulating ring structure and the semi-insulating convex ring structure are chamfered, and the chamfer angle is C0.5.

The invention comprises a left half insulating ring and a right half insulating ring which are made of high-purity alumina with the purity of more than 95 percent through a cold isostatic pressing process, have the same structure and are symmetrically distributed by taking the joint surfaces as symmetrical surfaces, and respectively comprise an integrated semi-insulating ring structure and a convex semi-insulating ring structure, wherein the left half insulating ring and the right half insulating ring comprising the semi-insulating ring structure and the convex semi-insulating ring structure have the following properties: the breaking strength is more than or equal to 300MPa, and the volume density is more than or equal to 3.65g/cm³Dielectric constant of 9-10.5 at 10GHz and 20 deg.C, and volume resistivity of 10 or more at 500 deg.C⁸Omega cm, breakdown strength not less than 20KV/mm, and linear expansion coefficient of 6.5-8X 10 at 20-800 deg.C^-6V. degree c, chemical stability of the left and right semi-insulating rings: 1:9HCL is less than or equal to 7.0mg/cm²、10％NaOH≤0.15mg/cm². Thus, the creepage distance is long, and meanwhile, the cable is not easy to crack.

The grounding current collector has the advantages of simple structure, easily obtained materials, convenient manufacture, low cost and difficult cracking in use, is mounted on a silicon rod of a reduction furnace to operate for 120 hours, has the grounding current of 60MA, and is easy to take. The method has strong applicability and is suitable for wide popularization and application in the technical field.

The above-mentioned embodiment is only one of the preferred embodiments of the present invention, and should not be used to limit the scope of the present invention, but all the insubstantial modifications or changes made within the spirit and scope of the main design of the present invention, which still solve the technical problems consistent with the present invention, should be included in the scope of the present invention.