阅读说明：本技术 光电记忆器件、光电记忆读出器件及相机模组 (Photoelectric memory device, photoelectric memory reading device and camera module ) 是由 李百奎 唐曦 于 2018-04-10 设计创作，主要内容包括：一种光电记忆器件(100),包括光电二极管(10)及横向整流器(20)；该光电二极管(10)包括半导体异质结(11)、第一阳极(12)及第一阴极(13),该半导体异质结(11)包括具有第一带隙的沟道层(111)、具有第二带隙的阻拦层(112)及形成于该沟道层(111)与该阻拦层(112)之间的二维电子气(113),阻拦层(112)在沟道层(111)上形成,第一阳极(12)在阻拦层(112)上形成,第一阴极(13)在沟道层(111)上形成且位于沟道层(111)的一侧,第一阴极(13)的内侧与二维电子气(113)及阻拦层(112)连接；横向整流器(20)包括第二阳极(14)及第二阴极(15),第二阴极(15)在沟道层(111)上形成且位于与第一阴极(13)相对的一侧,第二阴极(15)的内侧与阻拦层(112)连接,该第二阳极(14)分别形成于该第一阳极(12)的一端、该第二阴极(15)以及该第一阳极(12)的该端与该第二阴极(15)之间的阻拦层(112)上；第一带隙小于第二带隙。该方案可记忆光照行为。(An optoelectronic memory device (100) comprising a photodiode (10) and a lateral rectifier (20); the photodiode (10) comprises a semiconductor heterojunction (11), a first anode (12) and a first cathode (13), wherein the semiconductor heterojunction (11) comprises a channel layer (111) with a first band gap, a blocking layer (112) with a second band gap and a two-dimensional electron gas (113) formed between the channel layer (111) and the blocking layer (112), the blocking layer (112) is formed on the channel layer (111), the first anode (12) is formed on the blocking layer (112), the first cathode (13) is formed on the channel layer (111) and located on one side of the channel layer (111), and the inner side of the first cathode (13) is connected with the two-dimensional electron gas (113) and the blocking layer (112); the transverse rectifier (20) comprises a second anode (14) and a second cathode (15), the second cathode (15) is formed on the channel layer (111) and located on one side opposite to the first cathode (13), the inner side of the second cathode (15) is connected with the blocking layer (112), the second anode (14) is respectively formed on one end of the first anode (12), the second cathode (15) and the blocking layer (112) between the end of the first anode (12) and the second cathode (15); the first band gap is smaller than the second band gap. The scheme can memorize the illumination behavior.)

The photoelectric memory device based on the semiconductor heterojunction is characterized by comprising a photodiode and a transverse rectifier; the photodiode comprises a semiconductor heterojunction, a first anode and a first cathode, wherein the semiconductor heterojunction comprises a channel layer with a first band gap, a blocking layer with a second band gap and two-dimensional electron gas formed at a contact interface between the channel layer and the blocking layer, the blocking layer is formed on the channel layer, the first anode is formed on the blocking layer, the first cathode is formed on the channel layer and positioned on one side of the channel layer, and the inner side of the first cathode is connected with the two-dimensional electron gas and the blocking layer; the lateral rectifier comprises a second anode and a second cathode, the second cathode is formed on the channel layer and is positioned on one side opposite to the first cathode, the inner side of the second cathode is connected with the barrier layer, and the second anode is respectively formed on one end of the first anode, the second cathode and the barrier layer between the end of the first anode and the second cathode; the first band gap is smaller than the second band gap, the channel layer and the blocking layer are both made of semiconductors, a preset area, close to the second cathode, in a contact interface between the channel layer and the blocking layer does not include the two-dimensional electron gas, and an area, except the preset area, in the contact interface includes the two-dimensional electron gas.

The device of claim 1, wherein the channel layer and the blocking layer are each a group iii nitride.

The device according to claim 2, wherein the channel layer is made of any one of gan, algan and ingan, and the blocking layer is made of algan.

The optoelectronic memory device of claim 1, wherein the semiconductor heterojunction further comprises an insertion layer having a third bandgap, wherein the insertion layer is formed between the channel layer and the blocking layer, and wherein the third bandgap is greater than the first bandgap and the second bandgap.

The optoelectronic memory device of claim 1, wherein the semiconductor heterojunction further comprises a capping layer having a fourth bandgap, wherein the capping layer is formed on the blocking layer, and wherein the fourth bandgap is less than or equal to the first bandgap.

The device according to claim 1, wherein the channel layer generates band-to-band excitation and generates electron-hole pairs including photo-generated electrons and photo-generated holes when the device is irradiated with predetermined incident light; the photo-generated electrons drift towards the two-dimensional electron gas, the photo-generated holes drift into the channel layer body to generate a photovoltage, the photo-generated electrons in the two-dimensional electron gas continuously accumulate, and a fermi level difference is generated between the first anode and the first cathode; wherein the photon energy of the preset incident light is greater than the first band gap and less than the second band gap.

The device of claim 6, wherein the lateral rectifier is turned on when the generated photovoltage is greater than a turn-on voltage of the lateral rectifier, the photogenerated electrons flowing through the lateral rectifier to the first anode to generate a transient photocurrent.

The device of claim 7, wherein the magnitude of the transient photocurrent increases with increasing chopping frequency of the predetermined incident light.

The device of claim 7, wherein the transient photocurrent charges the first anode, the fermi level of the first anode increases; when the fermi level of the first anode is increased to be the same as the fermi level of the two-dimensional electron gas, the transient photocurrent is attenuated to 0.

The device of claim 6, wherein the lateral rectifier is in an off state when the predetermined incident light is removed, the photo-generated electrons cannot flow back into the two-dimensional electron gas, and the photo-generated electrons remain in the first anode.

The photoelectric memory reading device is characterized by comprising a photoelectric memory device and a field effect transistor, wherein the photoelectric memory device comprises a photodiode and a transverse rectifier; the photodiode comprises a semiconductor heterojunction, a first anode and a first cathode, wherein the semiconductor heterojunction comprises a channel layer with a first band gap, a blocking layer with a second band gap and two-dimensional electron gas formed at a contact interface between the channel layer and the blocking layer, the blocking layer is formed on the channel layer, the first anode is formed on the blocking layer, the first cathode is formed on the channel layer and positioned on one side of the channel layer, and the inner side of the first cathode is connected with the two-dimensional electron gas and the blocking layer; the lateral rectifier comprises a second anode and a second cathode, the second cathode is formed on the channel layer and is positioned on one side opposite to the first cathode, the inner side of the second cathode is connected with the barrier layer, and the second anode is respectively formed on one end of the first anode, the second cathode and the barrier layer between the end of the first anode and the second cathode; the first band gap is smaller than the second band gap, the channel layer and the blocking layer are both made of semiconductors, a preset area, close to the second cathode, in a contact interface between the channel layer and the blocking layer does not include the two-dimensional electron gas, and an area, except the preset area, in the contact interface includes the two-dimensional electron gas; the field effect transistor comprises a drain electrode, a source electrode and a grid electrode, wherein the drain electrode is respectively electrically connected with the first anode, the second anode and the second cathode, the source electrode is electrically connected with the first cathode, the grid electrode is connected with a control circuit, and the control circuit is used for outputting a control signal to the grid electrode so as to control the field effect transistor to be in a conducting state or a cut-off state.

The optoelectronic memory readout device of claim 11 wherein the channel layer undergoes interband excitation and generates electron-hole pairs comprising photogenerated electrons and photogenerated holes when the optoelectronic memory device is illuminated by a predetermined incident light; the photo-generated electrons drift towards the two-dimensional electron gas, the photo-generated holes drift into the channel layer body to generate a photovoltage, the photo-generated electrons in the two-dimensional electron gas continuously accumulate, and a fermi level difference is generated between the first anode and the first cathode; wherein the photon energy of the preset incident light is greater than the first band gap and less than the second band gap.

The optical memory readout device of claim 12 wherein the lateral rectifier is turned on when the generated photovoltage is greater than a turn-on voltage of the lateral rectifier through which the photo-generated electrons flow to the first anode to produce a transient photocurrent.

The optoelectronic memory readout device of claim 13 wherein the transient photocurrent charges the first anode, the fermi level of the first anode increasing; when the fermi level of the first anode is increased to be the same as the fermi level of the two-dimensional electron gas, the transient photocurrent is attenuated to 0.

The optical-electrical memory readout device according to claim 12, wherein when the predetermined incident light is removed, the lateral rectifier is in an off state, and if the control circuit controls the field effect transistor to be in the off state, the photo-generated electrons cannot flow back to the two-dimensional electron gas, and the photo-generated electrons remain in the first anode.

The device as claimed in claim 12, wherein when the predetermined incident light is removed, the lateral rectifier is in an off state, and if the control circuit controls the fet to be in an on state, the first cathode is electrically connected to the second cathode, and the photo-generated electrons sequentially flow back to the two-dimensional electron gas through the second anode, the second cathode and the first cathode, and recombine with the second photo-generated holes to generate a reverse transient photocurrent; wherein a direction of the reverse transient photocurrent is opposite to a direction of the transient photocurrent.

The device of claim 16, wherein the photogenerated electrons recombine with the photogenerated holes by radiative recombination.

The device of claim 16, wherein the photogenerated electrons recombine with the photogenerated holes by non-radiative recombination.

The device of claim 16, wherein the reverse transient photocurrent decays to 0 when recombination of the photogenerated electrons and the photogenerated holes is complete.

A camera module is characterized by comprising a photoelectric memory reading device, wherein the photoelectric memory reading device comprises a photoelectric memory device and a field effect transistor, and the photoelectric memory device comprises a photodiode and a transverse rectifier; the photodiode comprises a semiconductor heterojunction, a first anode and a first cathode, wherein the semiconductor heterojunction comprises a channel layer with a first band gap, a blocking layer with a second band gap and two-dimensional electron gas formed at a contact interface between the channel layer and the blocking layer, the blocking layer is formed on the channel layer, the first anode is formed on the blocking layer, the first cathode is formed on the channel layer and positioned on one side of the channel layer, and the inner side of the first cathode is connected with the two-dimensional electron gas and the blocking layer; the lateral rectifier comprises a second anode and a second cathode, the second cathode is formed on the channel layer and is positioned on one side opposite to the first cathode, the inner side of the second cathode is connected with the barrier layer, and the second anode is respectively formed on one end of the first anode, the second cathode and the barrier layer between the end of the first anode and the second cathode; the first band gap is smaller than the second band gap, the channel layer and the blocking layer are both made of semiconductors, a preset area, close to the second cathode, in a contact interface between the channel layer and the blocking layer does not include the two-dimensional electron gas, and an area, except the preset area, in the contact interface includes the two-dimensional electron gas; the field effect transistor comprises a drain electrode, a source electrode and a grid electrode, wherein the drain electrode is respectively electrically connected with the first anode, the second anode and the second cathode, the source electrode is electrically connected with the first cathode, the grid electrode is connected with a control circuit, and the control circuit is used for outputting a control signal to the grid electrode so as to control the field effect transistor to be in a conducting state or a cut-off state.