阅读说明：本技术 光电记忆器件、光电记忆读出器件及相机模组 (Photoelectric memory device, photoelectric memory reading device and camera module ) 是由 李百奎 唐曦 于 2018-04-10 设计创作，主要内容包括：一种光电记忆器件(100),包括光电二极管(10)及横向整流器(20)；该光电二极管(10)包括半导体异质结(11)、第一阳极(12)及第一阴极(13),该半导体异质结(11)包括具有第一带隙的沟道层(111)、具有第二带隙的阻拦层(112)及形成于该沟道层(111)与该阻拦层(112)之间的二维电子气(113),阻拦层(112)在沟道层(111)上形成,第一阳极(12)在阻拦层(112)上形成,第一阴极(13)在沟道层(111)上形成且位于沟道层(111)的一侧,第一阴极(13)的内侧与二维电子气(113)及阻拦层(112)连接；横向整流器(20)包括第二阳极(14)及第二阴极(15),第二阴极(15)在沟道层(111)上形成且位于与第一阴极(13)相对的一侧,第二阴极(15)的内侧与阻拦层(112)连接,该第二阳极(14)分别形成于该第一阳极(12)的一端、该第二阴极(15)以及该第一阳极(12)的该端与该第二阴极(15)之间的阻拦层(112)上；第一带隙小于第二带隙。该方案可记忆光照行为。(An optoelectronic memory device (100) comprising a photodiode (10) and a lateral rectifier (20); the photodiode (10) comprises a semiconductor heterojunction (11), a first anode (12) and a first cathode (13), wherein the semiconductor heterojunction (11) comprises a channel layer (111) with a first band gap, a blocking layer (112) with a second band gap and a two-dimensional electron gas (113) formed between the channel layer (111) and the blocking layer (112), the blocking layer (112) is formed on the channel layer (111), the first anode (12) is formed on the blocking layer (112), the first cathode (13) is formed on the channel layer (111) and located on one side of the channel layer (111), and the inner side of the first cathode (13) is connected with the two-dimensional electron gas (113) and the blocking layer (112); the transverse rectifier (20) comprises a second anode (14) and a second cathode (15), the second cathode (15) is formed on the channel layer (111) and located on one side opposite to the first cathode (13), the inner side of the second cathode (15) is connected with the blocking layer (112), the second anode (14) is respectively formed on one end of the first anode (12), the second cathode (15) and the blocking layer (112) between the end of the first anode (12) and the second cathode (15); the first band gap is smaller than the second band gap. The scheme can memorize the illumination behavior.)