阅读说明：本技术 嵌入式非易失性存储器器件及其制造方法 (Embedded non-volatile memory device and method of manufacturing the same ) 是由 陈春 J·朴 金恩顺 姜仁国 姜成泽 张国栋 于 2018-07-13 设计创作，主要内容包括：系统和形成这样的系统的方法包括在第一区域中形成存储器栅极(MG)堆叠、在第二区域中的高k电介质上形成牺牲多晶硅栅极,其中,第一区域和第二区域被设置在单个衬底中。然后,可以在半导体衬底的第一区域中邻近MG堆叠形成选择栅极(SG)。牺牲多晶硅栅极可以用金属栅极代替,以在第二区域中形成逻辑场效应晶体管(FET)。第一区域和第二区域中的衬底表面基本共面。(Systems and methods of forming such systems include forming a Memory Gate (MG) stack in a first region, forming a sacrificial polysilicon gate on a high-k dielectric in a second region, wherein the first and second regions are disposed in a single substrate. A Select Gate (SG) may then be formed in the first region of the semiconductor substrate adjacent to the MG stack. The sacrificial polysilicon gate may be replaced with a metal gate to form a logic Field Effect Transistor (FET) in the second region. The substrate surfaces in the first and second regions are substantially coplanar.)