阅读说明：本技术 连续生长外延片的方法、装置、设备及存储介质 (Method, device and equipment for continuously growing epitaxial wafer and storage medium ) 是由 彭伟伦 林忠宝 周亮 于 2019-09-11 设计创作，主要内容包括：本发明提供一种连续生长外延片的方法、装置、设备及存储介质,方法包括：经第一生长周期获得第一组外延片；获得第一组外延片中的每一个外延片的不同位置的多个波长值；根据多个波长值计算得到第一组外延片的每一个外延片的平均波长偏差值以及若干个外延片的总平均波长偏差值；比较第一生长周期的总平均波长偏差值与第一组外延片的目标波长,并根据比较结果调整气体流量参数以在第二生长周期中进行第二组外延片的生长。该方法完全可以实现外延片生长的参数的智能化自动控制,使得MOCVD系统的参数的调整更加统一,更加准确,从而提高MOCVD设备不同的生长周期生长的外延片波长一致性,提高外延片的良率。(The invention provides a method, a device, equipment and a storage medium for continuously growing epitaxial wafers, wherein the method comprises the following steps: obtaining a first group of epitaxial wafers through a first growth cycle; obtaining a plurality of wavelength values of different positions of each epitaxial wafer in the first group of epitaxial wafers; calculating the average wavelength deviation value of each epitaxial wafer of the first group of epitaxial wafers and the total average wavelength deviation value of the plurality of epitaxial wafers according to the plurality of wavelength values; and comparing the total average wavelength deviation value of the first growth period with the target wavelength of the first group of epitaxial wafers, and adjusting the gas flow parameters according to the comparison result so as to grow the second group of epitaxial wafers in the second growth period. The method can completely realize the intelligent automatic control of the parameters of the growth of the epitaxial wafer, so that the adjustment of the parameters of the MOCVD system is more uniform and more accurate, the wavelength consistency of the epitaxial wafers grown in different growth periods of MOCVD equipment is improved, and the yield of the epitaxial wafers is improved.)

1. A method for continuously growing an epitaxial wafer, the method using an MOCVD system for continuous growth of the epitaxial wafer, the method comprising the steps of:

obtaining a first group of epitaxial wafers through a first growth cycle, wherein the first group of epitaxial wafers comprises a plurality of epitaxial wafers;

obtaining a plurality of wavelength values of different positions of each epitaxial wafer in the first group of epitaxial wafers;

calculating to obtain an average wavelength deviation value of each epitaxial wafer of the first group of epitaxial wafers and a total average wavelength deviation value of a plurality of epitaxial wafers according to the plurality of wavelength values;

comparing the total average wavelength deviation value of the first growth cycle with the target wavelength of the first group of epitaxial wafers, and adjusting a gas flow parameter according to a comparison result to obtain the gas flow parameter of a second growth cycle;

and growing a second group of epitaxial wafers in the second growth period according to the adjusted gas flow parameters.

2. The method of claim 1, wherein comparing the total average wavelength deviation value for the first growth cycle to a target wavelength for the first set of epitaxial wafers and adjusting a gas flow parameter to obtain the gas flow parameter for a second growth cycle based on the comparison comprises:

judging whether the total average wavelength deviation exceeds the threshold range of the target wavelength;

if the total average wavelength deviation exceeds the threshold range, adjusting the gas flow parameter, otherwise not adjusting the gas flow parameter.

3. The method of claim 1, further comprising the steps of:

calculating second wavelength deviation values of the plurality of epitaxial wafers corresponding to different heating wires of the MOCVD system according to the plurality of wavelength values;

comparing the second wavelength deviation value with the target wavelength of the first group of epitaxial wafers, and adjusting the set temperature of each heating wire in the second growth period according to the comparison result;

and growing a second group of epitaxial wafers in the second growth period according to the adjusted set temperature.

4. The method of claim 3, wherein comparing the second wavelength deviation value with a target wavelength of the first group of epitaxial wafers and adjusting the set temperature of each of the heating wires in the second growth cycle according to the comparison further comprises:

judging whether the second wavelength deviation exceeds the threshold range of the target wavelength or not;

and if the second wavelength deviation exceeds the threshold range, adjusting the set temperature, otherwise, not adjusting the set temperature.

5. The method of claim 1, wherein obtaining a plurality of wavelength values for different locations of each epitaxial wafer in the first set of epitaxial wafers comprises:

and collecting the edge wavelength of the edge position and the center wavelength of the center position of each epitaxial wafer in the plurality of epitaxial wafers.

6. An apparatus for continuously growing epitaxial wafers, comprising:

the MOCVD growth system comprises a growth cavity for continuously growing epitaxial wafers, wherein a first group of epitaxial wafers are obtained in the growth cavity through a first growth cycle, and the first group of epitaxial wafers comprise a plurality of epitaxial wafers;

the wavelength detection system is arranged inside or outside the MOCVD growth system and used for obtaining a plurality of wavelength values of different positions of each epitaxial wafer in the first group of epitaxial wafers and calculating an average wavelength deviation value of each epitaxial wafer in the first group of epitaxial wafers and a total average wavelength deviation value of a plurality of epitaxial wafers according to the plurality of wavelength values;

the gas flow control unit is electrically connected with the wavelength detection system and used for acquiring and comparing the total average wavelength deviation value of the first growth cycle with the target wavelength of the first group of epitaxial wafers and adjusting gas flow parameters according to the comparison result to acquire gas flow parameters of a second growth cycle;

and the MOCVD growth system performs growth of a second group of epitaxial wafers in the second growth period according to the adjusted gas flow parameters.

7. The apparatus of claim 6, wherein the gas flow control unit comprises:

the first judgment unit is used for judging whether the total average deviation value exceeds the threshold range of the target wavelength or not;

and the gas flow parameter adjusting unit is electrically connected with the first judging unit and used for receiving the judging result of the first judging unit, and if the judging unit judges that the total average wavelength deviation exceeds the threshold range, the gas flow parameter adjusting unit adjusts the gas flow parameter, otherwise, the gas flow parameter is not adjusted.

8. The apparatus of claim 6, further comprising a temperature control unit electrically connected to the wavelength detection unit, the wavelength detection unit further configured to: calculating second wavelength deviation values of the plurality of epitaxial wafers corresponding to different heating wires of the MOCVD system according to the plurality of wavelength values;

the temperature control unit is configured to compare the second wavelength deviation value with the target wavelength of the first group of epitaxial wafers, and judge and adjust the set temperature of each heating wire in the second growth period according to the comparison result.

9. The apparatus of claim 8, wherein the temperature control unit comprises:

the second judging unit is used for judging whether the second wavelength deviation value exceeds the threshold range of the target wavelength or not;

and the temperature adjusting unit is electrically connected with the second judging unit and receives the judgment result of the second judging unit, and if the judging unit judges that the second wavelength deviation value exceeds the threshold value range, the set temperature is adjusted, otherwise, the set temperature is not adjusted.

10. The apparatus of claim 9, wherein the wavelength detection system comprises:

and the wavelength acquisition unit is used for acquiring the edge wavelength of the edge position and the center wavelength of the center position of each epitaxial wafer in the plurality of epitaxial wafers in the first growth period.

11. An apparatus, characterized in that the apparatus comprises:

a processor;

a memory for storing one or more programs,

the one or more programs, when executed by the processor, cause the processor to perform the method of any of claims 1-5.

12. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the method according to any one of claims 1-5.

Technical Field

The invention relates to the field of metal organic compound chemical vapor deposition (MOCVD) production, in particular to a method for growing an epitaxial wafer, an MOCVD system, equipment and a storage medium.

Background

MOCVD (Metal-organic Chemical Vapor Deposition) is a medium-epitaxial growth technology, which uses organic compounds of III group and II group elements, hydrides of V group and VI group elements and the like as crystal growth source materials to carry out Vapor phase epitaxy on a substrate in a thermal decomposition reaction mode to grow thin layer single crystal materials of various III-V group and II-VI group compound semiconductors and multi-element solid solutions thereof. The wavelength hit rate of the epitaxial wafer obtained by MOCVD is not ideal, and in order to solve the problem, in the prior art, the obtained wavelength of the epitaxial wafer is manually analyzed and calculated, and then the temperature parameter of the heating wire and the parameter of a Mass Flow Controller (MFC) are set according to the calculation result. However, the prior art has the following defects:

1. a large amount of manual processing data is consumed, and the latest data cannot be updated in real time;

2. different personnel have different logical judgments which cannot be unified, so that yield divergence phenomena occur in different MOCVD systems;

3. the manual modification parameters lack clear records, and the history record of the machine is easy to be lost.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, it is an object of the present invention to provide a method, an apparatus, a device and a storage medium for continuously growing epitaxial wafers, which can adjust different growth parameters in MOCVD production process according to the obtained wavelength information of different positions of the epitaxial wafer, such as adjusting temperature parameters, MFC parameters and the like in the production process, thereby improving the growth quality of the epitaxial wafer.

To achieve the above and other related objects, an embodiment of the present invention provides a method for continuously growing an epitaxial wafer using an MOCVD system, the method comprising the steps of:

obtaining a first group of epitaxial wafers through a first growth cycle, wherein the first group of epitaxial wafers comprises a plurality of epitaxial wafers;

obtaining a plurality of wavelength values of different positions of each epitaxial wafer in the first group of epitaxial wafers;

calculating to obtain an average wavelength deviation value of each epitaxial wafer of the first group of epitaxial wafers and a total average wavelength deviation value of a plurality of epitaxial wafers according to the plurality of wavelength values;

comparing the total average wavelength deviation value of the first growth cycle with the target wavelength of the first group of epitaxial wafers, and adjusting gas flow parameters according to the comparison result to obtain the gas flow parameters of a second growth cycle;

and growing a second group of epitaxial wafers in the second growth period according to the adjusted gas flow parameters.

Optionally, the step of comparing the total average wavelength deviation value of the first growth cycle with the target wavelength of the first group of epitaxial wafers, and adjusting a gas flow parameter according to the comparison result to obtain the gas flow parameter of a second growth cycle comprises the following steps:

judging whether the total average wavelength deviation exceeds the threshold range of the target wavelength;

if the total average wavelength deviation exceeds the threshold range, adjusting the gas flow parameter, otherwise not adjusting the gas flow parameter.

Optionally, the method for continuously growing the epitaxial wafer further comprises the following steps:

calculating second wavelength deviation values of the plurality of epitaxial wafers corresponding to different heating wires of the MOCVD system according to the plurality of wavelength values;

and comparing the second wavelength deviation value with the target wavelength of the first group of epitaxial wafers, and adjusting the set temperature of each heating wire in the second growth period according to the comparison result.

Optionally, the step of comparing the second wavelength deviation value with the target wavelength of the first group of epitaxial wafers and adjusting the set temperature of each heating wire in the second growth cycle according to the comparison result further includes the steps of:

judging whether the second wavelength deviation exceeds the threshold range of the target wavelength or not;

and if the second wavelength deviation exceeds the threshold range, adjusting the set temperature, otherwise, not adjusting the set temperature.

Optionally, obtaining a plurality of wavelength values for different positions of each of the first set of epitaxial wafers comprises:

and collecting the edge wavelength of the edge position and the center wavelength of the center position of each epitaxial wafer in the plurality of epitaxial wafers.

To achieve the above and other related objects, an embodiment of the present invention provides an apparatus for continuously growing an epitaxial wafer, including:

the MOCVD growth system comprises a growth cavity for continuously growing epitaxial wafers, wherein a first group of epitaxial wafers are obtained in the growth cavity through a span growth period, and the first group of epitaxial wafers comprise a plurality of epitaxial wafers;

the wavelength detection system is arranged inside or outside the MOCVD growth system and used for obtaining a plurality of wavelength values of different positions of each epitaxial wafer in the first group of epitaxial wafers and calculating an average wavelength deviation value of each epitaxial wafer in the first group of epitaxial wafers and a total average wavelength deviation value of a plurality of epitaxial wafers according to the plurality of wavelength values;

the gas flow control unit is electrically connected with the wavelength detection system and used for acquiring and comparing the total average wavelength deviation value of the first growth cycle with the target wavelength of the first group of epitaxial wafers and adjusting gas flow parameters according to the comparison result to acquire gas flow parameters of a second growth cycle;

and the MOCVD growth system performs growth of a second group of epitaxial wafers in the second growth period according to the adjusted gas flow parameters.

Optionally, the gas flow control unit comprises:

the first judgment unit is used for judging whether the total average deviation value exceeds the threshold range of the target wavelength or not;

and the gas flow parameter adjusting unit is electrically connected with the first judging unit and used for receiving the judging result of the first judging unit, and if the judging unit judges that the total average wavelength deviation exceeds the threshold range, the gas flow parameter adjusting unit adjusts the gas flow parameter, otherwise, the gas flow parameter is not adjusted.

Optionally, the wavelength detection device further includes a temperature control unit electrically connected to the wavelength detection unit, and the wavelength detection unit is further configured to: calculating second wavelength deviation values of the plurality of epitaxial wafers corresponding to different heating wires of the MOCVD system according to the plurality of wavelength values;

the temperature control unit is configured to compare the second wavelength deviation value with the target wavelength of the first group of epitaxial wafers, and judge and adjust the set temperature of each heating wire in the second growth period according to the comparison result.

Optionally, the temperature control unit comprises:

a second judging unit, configured to judge whether the second wavelength deviation exceeds a threshold range of the target wavelength;

and the temperature adjusting unit is electrically connected with the second judging unit and used for receiving the judgment result of the second judging unit, and if the judging unit judges that the second wavelength deviation exceeds the threshold range, the temperature adjusting unit adjusts the set temperature, otherwise, the temperature adjusting unit does not adjust the set temperature.

Optionally, the wavelength detection unit includes:

and the acquisition unit is used for acquiring the center wavelength of the center position of the edge wavelength of the edge position of each epitaxial wafer in the plurality of epitaxial wafers in the first growth period.

To achieve the above and other related objects, an embodiment of the present invention provides an apparatus comprising:

a processor;

a memory for storing one or more programs,

the one or more programs, when executed by the processor, cause the processor to perform the methods of the present invention.

To achieve the above and other related objects, an embodiment of the present invention provides a computer-readable storage medium storing a computer program, which when executed by a processor, implements the method of the present invention.

The method, the device, the equipment and the storage medium for continuously growing the epitaxial wafer have the following beneficial effects that:

according to the method, the average wavelength deviation and/or the second wavelength deviation value are calculated according to the wavelength information from the collection of the wavelength information, and the adjustment of the production parameters of the MOCVD system according to the average wavelength deviation and/or the second wavelength deviation value is automatically carried out, so that the problem of non-uniform parameter adjustment caused by difference in logic judgment of different personnel during manual operation can be avoided, the MOCVD production parameters can be adjusted more uniformly and accurately, the wavelength hit rate of epitaxial wafers produced by different MOCVD equipment is improved, and the yield of the epitaxial wafers is improved.

The method of the invention measures different wavelength parameters aiming at different parameter adjustment, for example, when adjusting the gas flow parameter, the edge wavelength and the center wavelength of the epitaxial wafer are measured, and the gas flow parameter of the operation period generated by downward shift is adjusted according to the relation between the average wavelength deviation between the edge wavelength and the center wavelength and the gas flow; and when the temperature is adjusted, measuring different wavelengths at the positions of the epitaxial wafers corresponding to different heating wires, and setting the set temperature of the next growth cycle according to the relationship between the temperature and a second wavelength deviation value between the wavelength and the set wavelength of the epitaxial wafer. Therefore, different parameters can be adjusted more accurately, the accuracy of the method for adjusting the parameters of the MOCVD system is improved, and the yield of epitaxial wafers is further improved.

In addition, by adopting the technical scheme of the invention, the experience training of the temperature control system is not required to be carried out on an engineer, the cost is reduced, and the manpower is liberated; after the technical scheme of the invention is implemented, the hit rate of 6nm is improved by about 5% compared with manual control; in addition, the man-machine ratio in the workshop is improved from 1:3 to 1:6 by adopting the technical scheme of the invention.

Drawings

FIG. 1 is a flow chart illustrating a method of growing an epitaxial wafer according to the present invention;

fig. 2 is a block diagram of the MOCVD system for growing epitaxial wafers according to the present invention.

Fig. 3 is a schematic circuit diagram of an apparatus according to an embodiment of the present disclosure.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein.