Semiconductor device with a plurality of semiconductor chips
阅读说明:本技术 半导体装置 (Semiconductor device with a plurality of semiconductor chips ) 是由 曾思惟 蔡国强 于 2019-06-26 设计创作,主要内容包括:本发明实施例提供一种半导体装置,包含:第一栅极结构和第二栅极结构,各自设置于基板之上;第一导电接触件和第二导电接触件,各自设置于基板之上;第一导孔,设置于所述第一导电接触件之上;第二导孔,设置于所述第二导电接触件之上;第一栅极接触件,设置于所述第一栅极结构之上;以及介电结构,设置于所述第一栅极结构之上和第二栅极结构之上。其中,介电结构的第一部分设置于第一导孔和第二导孔之间且电性隔离第一导孔和第二导孔;介电结构的第二部分设置于第一导孔和第一栅极接触件之间且电性隔离第一导孔和第一栅极接触件;介电结构的第一部分和第二部分各自包含单一类型的介电材料;第一导电接触件和第一导孔之间的第一界面在剖面图中构成所述第一导电接触件的上表面区域的第一百分比;第一栅极结构和第一栅极接触件之间的第二界面在剖面图中构成所述第一栅极结构的上表面区域的第二百分比。所述第一百分比大于所述第二百分比。(An embodiment of the present invention provides a semiconductor device, including: the first grid structure and the second grid structure are respectively arranged on the substrate; a first conductive contact and a second conductive contact each disposed on the substrate; a first via disposed over the first conductive contact; a second via disposed over the second conductive contact; a first gate contact disposed over the first gate structure; and a dielectric structure disposed over the first gate structure and over the second gate structure. Wherein the first portion of the dielectric structure is disposed between and electrically isolates the first via and the second via; a second portion of the dielectric structure disposed between and electrically isolating the first via and the first gate contact; the first and second portions of the dielectric structure each comprise a single type of dielectric material; a first interface between a first conductive contact and a first via constitutes a first percentage of an upper surface area of the first conductive contact in a cross-sectional view; a second interface between the first gate structure and the first gate contact constitutes a second percentage of an upper surface area of the first gate structure in the cross-sectional view. The first percentage is greater than the second percentage.)
1. A semiconductor device, comprising:
a first gate structure and a second gate structure, each disposed on a substrate;
a first conductive contact and a second conductive contact, each disposed on the substrate;
a first via disposed above the first conductive contact;
a second via hole disposed above the second conductive contact;
a first gate contact disposed on the first gate structure; and
a dielectric structure disposed over the first gate structure and over the second gate structure;
wherein:
a first portion of the dielectric structure disposed between and electrically isolating the first via and the second via;
a second portion of the dielectric structure disposed between and electrically isolating the first via and the first gate contact;
the first portion and the second portion of the dielectric structure each comprise a single type of dielectric material;
a first interface between the first conductive contact and the first via constitutes a first percentage of an upper surface area of the first conductive contact in cross-section;
a second interface between the first gate structure and the first gate contact constitutes a second percentage of an upper surface area of the first gate structure in the cross-sectional view; and
the first percentage is greater than the second percentage.
Technical Field
Embodiments of the present invention relate to semiconductor devices and methods of fabricating the same, and more particularly, to vias and gate contacts in semiconductor devices and methods of fabricating the same.
Background
The semiconductor Integrated Circuit (IC) industry has experienced rapid growth. Technological advances in the materials and design of integrated circuits have resulted in generations of integrated circuits, each with smaller and more complex circuits than the previous generation. As integrated circuit (ic) devices have evolved, as geometries (i.e., the smallest devices or lines that can be created during fabrication) have decreased, so has the functional density (i.e., the number of interconnected devices per chip area).
As semiconductor devices continue to shrink, manufacturing challenges also increase. For example, the shrinking distances between various semiconductor elements may cause bridging or electrical shorting problems, which may reduce the performance of the semiconductor device or even cause device failure.
Thus, while existing semiconductor fabrication methods generally meet their intended purpose, these methods are not entirely satisfactory in every aspect.
Disclosure of Invention
According to an embodiment of the present invention, there is provided a semiconductor device including: the first grid structure and the second grid structure are respectively arranged on the substrate; a first conductive contact and a second conductive contact each disposed on the substrate; a first via disposed over the first conductive contact; a second via disposed over the second conductive contact; a first gate contact disposed over the first gate structure; and a dielectric structure disposed over the first gate structure and over the second gate structure. Wherein the first portion of the dielectric structure is disposed between and electrically isolates the first via and the second via; a second portion of the dielectric structure disposed between and electrically isolating the first via and the first gate contact; the first and second portions of the dielectric structure each comprise a single type of dielectric material; a first interface between a first conductive contact and a first via constitutes a first percentage of an upper surface area of the first conductive contact in a cross-sectional view; a second interface between the first gate structure and the first gate contact constitutes a second percentage of an upper surface area of the first gate structure in the cross-sectional view. The first percentage is greater than the second percentage.
According to another embodiment of the present invention, there is provided a semiconductor device including: a plurality of gate structures disposed on the substrate; a plurality of conductive contacts disposed on the substrate; a plurality of gate contacts disposed over a first subset of the gate structures; a first dielectric material disposed over a second subset of the gate structures; a plurality of vias disposed over a first subset of the conductive contacts; a second dielectric material disposed over a second subset of the conductive contacts; and a third dielectric material disposed over the second dielectric material, wherein the first, second, and third dielectric materials have different material compositions than one another. Wherein, in a cross-sectional view: each via occupies a first percentage of an upper surface area of a conductive contact disposed therebelow; each gate contact occupies a second percentage of an upper surface area of the gate structure disposed therebelow. The first percentage is greater than the second percentage.
According to still another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, including: providing a plurality of gate structures and a plurality of conductive contacts, each formed on a substrate, wherein a plurality of gate caps are formed on the gate structures, respectively; etching back the conductive contacts, thereby forming a plurality of openings; forming a first dielectric layer over the gate cap and over the conductive contact, wherein the first dielectric layer fills the opening; etching back the first dielectric layer into a plurality of first dielectric segments, wherein each first dielectric segment is disposed on a respective one of the conductive contacts and partially fills a respective one of the openings; forming a second dielectric layer over the gate cap and over the first dielectric segment, wherein the second dielectric layer fills the opening; etching the second dielectric layer to form a plurality of first vias over at least a subset of the conductive contacts; forming a conductive material to fill the first via; and performing a planarization process to remove a portion of the conductive material and a portion of the second dielectric layer, thereby forming a plurality of first vias in the first vias.
Drawings
The embodiments of the present invention will be understood more fully from the detailed description given below and from the accompanying drawings. It is emphasized that, in accordance with industry standard practice, many of the features (features) are not drawn to scale. In fact, the dimensions of the various elements may be arbitrarily increased or reduced for clarity of discussion. It is also emphasized that the drawings illustrate only typical embodiments of the invention and are therefore not to be considered limiting of its scope, for the embodiments of the invention may be applied to other embodiments as well.
Fig. 1-14 illustrate cross-sectional side views of a semiconductor device at various stages of fabrication, in accordance with an embodiment of the present invention.
Fig. 15 shows a flowchart of a method of manufacturing a semiconductor device, according to an embodiment of the invention.
Wherein the reference numerals are as follows:
200-semiconductor device
210-substrate
220. 221, 222, 223, 224, 225-source/drain regions
230. 231, 232, 233, 234, 235, 236-gate structure
240-Gate spacer
245 interlayer dielectric
260. 261, 262, 263, 264, 265-conductive contact
280. 281, 282, 283, 284, 285, 286 to gate cap
300. 370-etching back process
310. 311, 312, 313, 430, 520, 521, 530 to opening
330. 400, 620-deposition process
350. 410 dielectric layer
380. 381, 382, 383, 384, 385 to section
390. 440, 540 to thickness
420. 500, 600-etching process
430A, 430B, 430C, 530A, 530B, 530C
450. 550-distance
640-conductive material
680 to planarization process
700. 701, 702, 703-guide holes/contacts
704. 705-Gate contact
720. 740 upper surface area
730. 750 to interface
780-height
900 to method
910. 920, 930, 940, 950, 960, 970, 980
Detailed Description
The following provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present embodiments. These are, of course, merely examples and are not intended to limit the embodiments of the invention. For example, references in the description to a first feature being formed on or over a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features such that the first and second features are not in direct contact. Moreover, embodiments of the present invention may repeat reference numerals and/or letters in the various examples, for purposes of simplicity and clarity, and do not represent a particular relationship between the various embodiments and/or configurations discussed.
Furthermore, spatially relative terms, such as "below … …," "below … …," "below," "above … …," "above," and the like, may be used herein to facilitate describing the relationship of one element(s) or component(s) to another element(s) or component(s) as shown. These spatially relative terms encompass different orientations of the device in use or during a procedure, and the orientation depicted in the figures. When the device is turned to a different orientation (rotated 90 degrees or otherwise), the spatially relative adjectives used herein will also be interpreted in terms of the turned orientation.
Further, when a number or range of numbers is described in terms of "about", "about" and the like, the term is intended to include numbers within a reasonable range, including numbers such as within +/-10% of the number or other value as would be understood by one of skill in the art. For example, the term "about 5 nm" includes a size range from 4.5nm to 5.5 nm.
As semiconductor technology nodes continue to shrink, manufacturing challenges arise. For example, as device dimensions become smaller, bridging problems may occur in which elements that should remain electrically isolated from each other are undesirably shorted together. Techniques to prevent bridging, such as overlay control, may place stringent requirements on lithography, but they do not adequately prevent bridging problems. In contrast, as discussed in more detail below, embodiments of the present invention utilize a novel manufacturing process to "self-align" the devices and automatically prevent bridging problems.
Fig. 1-14 illustrate schematic partial cross-sectional side views of a
The
The
The
Gate replacement processes may be used to form gate structures 230-233. In this regard, a dummy gate electrode (e.g., a polysilicon gate electrode) is first formed over the high-k gate dielectric. Source/drain regions (e.g., source/drain regions 220-223) of the transistors are formed in the substrate and on opposite sides of the dummy gate electrode. Thereafter, an interlayer dielectric (ILD) 245 is formed over the substrate and around the dummy gate electrode therein. A polishing process, such as chemical mechanical polishing, may be performed to planarize the upper surface of the
With continued reference to FIG. 1,
A plurality of conductive contacts 260-263 (also referred to as "MD" contacts) are formed on the source/drain regions 220-223, respectively, to provide electrical connections to the source/drain regions 220-223. The surface of the conductive contacts 260-263 may be planarized by etching a trench in the
A plurality of gate masks 280-283 are respectively located on the gate structures 230-233. The gate caps 280-283 include a dielectric material. In some embodiments, the dielectric material is silicon nitride (SiN). The use of silicon nitride as the gate cap material is different from conventional processes in thatOther types of dielectric materials are often selected for the gate cap (if formed). In other embodiments, the gate caps 280-283 may comprise dielectric materials, such as YSiOx、SiOC、Al2O3、HfO2、TiO2、ZrSiO4、HfSiO4、Si3N4、Ta2O5、SrO、Y2O3、La2O3、LaLuO2、CaO、MgO、Gd2O3、PrO2、CeO2、ZrHfO2AlON or a combination of the foregoing. Gate caps 280-283 are also located over the
Referring now to FIG. 2, an etch-back
Referring now to fig. 3, a deposition process 330 is performed to form a layer (also referred to as a dielectric layer) 350. A layer 350 is formed over the gate caps 280-283 and the conductive contacts 260-263. A portion of the layer 350 also fills the openings 310-313. The layer 350 may comprise a dielectric material different from that of the gate caps 280-283. In some embodiments, layer 350 comprises zirconium oxide (ZrO)2). In other embodiments, layer 350 may comprise a dielectric material, such as YSiOx、SiOC、Al2O3、HfO2、TiO2、ZrSiO4、HfSiO4、Si3N4、Ta2O5、SrO、Y2O3、La2O3、LaLuO2、CaO、MgO、Gd2O3、PrO2、CeO2、ZrHfO2AlON or combinations thereof, as long as layer 350 and
Referring now to fig. 4, an etch back
Referring now to fig. 5, a
Referring now to fig. 6, an
As will be more apparent from the discussion that follows, the formation of the
Referring still to FIG. 6, because the material of segments 380-381 is tuned to have an etch selectivity (e.g., greater than 10: 1) with respect to
However, since the etch selectivity cannot be infinitely high, the thickness of
As shown in fig. 6, opening 430 includes
In any event, the merging of
In contrast, even though the
As discussed above, another benefit of the process flow of the present embodiment is that the VD vias formed are "self-aligned" with the conductive contacts 260-261. For example, in some embodiments, an opening (e.g., opening 430) wide enough to laterally cover both of the conductive contacts 260-261 can be defined. Thus, once the segments 380-381 are removed in subsequent processes, VD vias can be formed over the entire top surface of the conductive contacts 260-261. The interface between the conductive contacts 260-261 and the VD vias is much larger than the interface between the conductive contacts and the VD vias in conventional processes. For example, conventional processes require complex overlay control to individually define VD via openings to align with the underlying conductive contacts, and thus only a portion of the upper surface of the conductive contacts may be in direct contact with the VD vias formed thereon. The larger via-to-contact (via-to-contact) interface provided by embodiments of the present invention improves device performance, such as lower resistivity.
Referring now to fig. 7, an
As described above, due to the different material compositions between the segments 380-383, the
The openings 520-521 are reserved for gate contacts (or vias) to be formed over the
It should be appreciated that although only one
It should be appreciated that the portion of the
Referring now to fig. 9-10, an
Referring now to fig. 11-12, a
Referring now to fig. 13-14, a
As a result of the
The
Due to the unique manufacturing flow, the
Another of these physical characteristics is the difference in interface area between the gate structure and the VG contacts formed above it, and between the conductive contacts and the VD vias formed above it. For example, referring to fig. 13, the conductive contact 260 (as one example of a conductive contact) has a top surface area 720 in a cross-sectional view therein, and the
Meanwhile, the gate structure 230 (as one example of a gate structure) has a top surface area 740 in the cross-sectional view of fig. 13, and the gate contact 700 and the
Another unique physical characteristic of the
Another unique physical characteristic of the
Various aspects of embodiments of the present invention may be applied to a wide variety of semiconductor integrated circuit applications, including but not limited to sram cells and/or standard logic cells. For example, the slotted contact 703 may be implemented in an SRAM cell as a Body Contact (BCT) or a connection contact. Vias (e.g., vias 701-702) may also be used in standard logic cell arrays to implement VD rails. Additional details regarding static random access memory cells or standard logic cells may be found in U.S. patent application No. 15/492,777 entitled FinFET static random access memory (PMOS Fin Lines) with Discontinuous P-type metal oxide semiconductor fins, the disclosure of which is incorporated herein by reference in its entirety. It should also be understood that various aspects of embodiments of the present invention may be applied to conventional planar transistors as well as recently developed three-dimensional fin field effect transistors (finfets). Exemplary finfet devices and their FABRICATION are described in more detail in U.S. patent No. 9,711,533, entitled "finfet device having different SOURCE/drains adjacent to i/o devices and NON-i/o devices and method OF fabricating the same" (FINFET DEVICES HAVING DIFFERENT SOURCE/drain FOR INPUT/OUTPUT DEVICES AND NON-INPUT/OUTPUT DEVICES AND method OF failure thermal) filed on 16/10/2015 and approved on 18/7/2017, the entire disclosure OF which is incorporated herein by reference. For the sake of brevity, details of the sram cell, standard logic cell, or finfet are not specifically discussed herein.
Fig. 15 shows a flow diagram of a method 900 according to an embodiment of the invention. The method 900 includes a step 910 of providing a plurality of gate structures and a plurality of conductive contacts, each formed on a substrate. A plurality of gate caps are respectively formed over the gate structures.
The method 900 includes a step 920 of etching back the conductive contacts, thereby forming a plurality of openings.
The method 900 includes a step 930 of forming a first dielectric layer over the gate cap and over the conductive contact. A first dielectric layer fills the opening.
The method 900 includes a step 940 of etching back the first dielectric layer into a plurality of first dielectric segments. Each dielectric segment is disposed on a respective one of the conductive contacts and partially fills a respective one of the openings.
The method 900 includes a step 950 of forming a second dielectric layer over the gate cap and over the first dielectric segment. A second dielectric layer fills the opening.
The method 900 includes a step 960 of etching the second dielectric layer to form a plurality of first vias over at least a subset of the conductive contacts.
The method 900 includes a step 970 of forming a conductive material to fill the first via.
The method 900 includes a step 980 of performing a planarization process to remove a portion of the conductive material and a portion of the second dielectric layer, thereby forming a plurality of first vias in the first vias.
In some embodiments, at least some of the first vias bridge with each other after etching the second dielectric layer (fig. 6,
In some embodiments, the first dielectric segment and the second dielectric layer have an etch selectivity and prevent the conductive contact located thereunder from being etched during the etching back of the first dielectric layer or during the etching of the second dielectric layer.
In some embodiments, a planarization process is performed until the gate cap is reached.
In some embodiments, the gate cap comprises silicon nitride, the first dielectric layer comprises zirconium oxide, and the second dielectric layer comprises silicon oxide.
It should be understood that additional processes may be performed before, during, or after steps 910-980 of method 900. For example, after etching the second dielectric layer but before forming the conductive material, the method 900 further comprises the step of etching the second dielectric layer and the gate cap with a plurality of second vias over at least a subset of the gate structures. The formation of the conductive material fills the second via and the planarization process forms a plurality of second vias in the second via. In some embodiments, the gate structure comprises a first gate structure, the conductive contact comprises a first conductive contact, at least one of the second vias is etched to laterally span the first gate structure and the first conductive contact, and a slotted contact is formed in the at least one second via, the slotted contact electrically connecting the first gate structure with the first conductive contact. The method 900 may further include steps such as forming additional metal layers, testing, packaging, etc. For the sake of brevity, other additional steps are not discussed in detail herein.
In summary, embodiments of the present invention relate to a unique manufacturing process for forming vias for conductive contacts and gate contacts for gate structures in semiconductor devices. The unique manufacturing flow cuts off a portion of the conductive material that may cause an electrical bridge between two adjacent vias or gate contacts. Accordingly, embodiments of the present invention provide advantageous advantages over conventional devices. However, it is to be understood that other embodiments may provide additional advantages, that not all advantages need be disclosed herein, and that not all embodiments need have a particular advantage. An advantage of an embodiment of the present invention is that the risk of bridging is prevented or reduced. As feature sizes of semiconductor devices continue to shrink, it may be difficult for photolithography to accurately resolve via openings (or gate contact openings) that are too close to each other. In conventional manufacturing methods, the via openings bridge with each other, which results in the final device having electrical short defects. The unique manufacturing flow of embodiments of the present invention prevents this bridging problem by self-aligning the vias and the source/drain contacts and using a grinding process to cut off the portion of conductive material that will bridge two adjacent vias (or gate contacts). Another benefit is that embodiments of the present invention can still maintain the formation of slotted contacts designed to "bridge" the gate structure and the source/drain contacts together while preventing inadvertent bridging between vias or gate contacts. Slotted contacts may be used in certain integrated circuit applications, such as sram cells. Another advantage is that the self-aligned vias formed in accordance with embodiments of the present invention have better electrical properties, such as resistivity, than conventional devices. Other advantages include compatibility with existing semiconductor device designs and fabrication, so embodiments of the present invention do not require additional processing and are therefore easy and inexpensive to implement.
One aspect of embodiments of the present invention relates to a semiconductor device. The first gate structure and the second gate structure are respectively disposed on the substrate. First and second conductive contacts are each disposed over the substrate. The first via is disposed above the first conductive contact. The second via is disposed over the second conductive contact. A first gate contact is disposed over the first gate structure. A dielectric structure is disposed over the first gate structure and over the second gate structure. The first portion of the dielectric structure is disposed between and electrically isolates the first via and the second via. The second portion of the dielectric structure is disposed between and electrically isolates the first via and the first gate contact. The first and second portions of the dielectric structure each comprise a single type of dielectric material. A first interface between the first conductive contact and the first via constitutes a first percentage of an upper surface area of the first conductive contact in cross-section. A second interface between the first gate structure and the first gate contact constitutes a second percentage of an upper surface area of the first gate structure in the cross-sectional view. The first percentage is greater than the second percentage.
In some embodiments, the ratio of the first percentage to the second percentage ranges between about 1.8: 1 to about 1.4: 1. in some embodiments, the first percentage is substantially equal to 100% in cross-sectional view. In some embodiments, the semiconductor device further comprises a plurality of gate spacers disposed on sidewalls of the first and second gate structures, wherein an upper surface of the gate spacers is disposed below and in direct contact with a portion of the dielectric structure. In some embodiments, the substrate comprises a first source/drain region and a second source/drain region, the first conductive contact disposed over the first source/drain region; and the second conductive contact is disposed over the second source/drain region. In some embodiments, the substrate further comprises a third source/drain region, and wherein the semiconductor device further comprises: a third gate structure disposed over the substrate; a third conductive contact disposed over the third source/drain region; and the slotted contact piece is arranged on the third grid structure and the third conductive contact piece and is electrically connected with the third grid structure and the third conductive contact piece. In some embodiments, the semiconductor device further comprises: a fourth conductive contact disposed over the substrate; a first dielectric layer disposed over the fourth conductive contact; and a second dielectric layer disposed over the first dielectric layer. In some embodiments, the semiconductor device further comprises: a fourth gate structure and a fifth gate structure disposed over the substrate, respectively, wherein a fourth conductive contact is disposed between the fourth gate structure and the fifth gate structure; a second gate contact disposed over the fourth gate structure; and a third gate contact disposed over the fifth gate structure, wherein the first and second dielectric layers are disposed between the second and third gate contacts. In some embodiments, the first dielectric layer has a first material composition; the second dielectric layer has a second material composition different from the first material composition; and the dielectric structure has a third material composition that is different from the first material composition and the second material composition. In some embodiments, the first material composition comprises zirconia; the second material composition comprises silicon oxide; and the third material composition comprises silicon nitride.
Another aspect of embodiments of the present invention relates to a semiconductor device. The gate structures are disposed on a substrate. A plurality of conductive contacts are disposed on the substrate. A plurality of gate contacts is disposed over the first subset of gate structures. A first dielectric material is disposed over the second subset of gate structures. A plurality of vias is disposed over the first subset of conductive contacts. A second dielectric material is disposed over a second subset of the conductive contacts. A third dielectric material is disposed over the second dielectric material. The first, second and third dielectric materials have different material compositions from one another. In the sectional view: each via occupies a first percentage of an upper surface area of a conductive contact disposed therebelow; each gate contact occupies a second percentage of an upper surface area of the gate structure disposed thereunder; and the first percentage is greater than the second percentage.
In some embodiments, the ratio of the first percentage to the second percentage ranges between about 1.8: 1 to about 1.4: 1. in some embodiments, the first dielectric material comprises silicon nitride; the second dielectric material comprises zirconium oxide; and the third dielectric material comprises silicon oxide.
Another aspect of embodiments of the present invention relates to a method for manufacturing a semiconductor device. A plurality of gate structures and a plurality of conductive contacts are each formed on a substrate, wherein a plurality of gate caps are each formed on the gate structures. The conductive contacts are etched back, thereby forming a plurality of openings. A first dielectric layer is formed over the gate cap and over the conductive contact, wherein the first dielectric layer fills the opening. The first dielectric layer is etched back into a plurality of first dielectric segments, wherein each first dielectric segment is disposed on a respective one of the conductive contacts and partially fills a respective one of the openings. A second dielectric layer is formed over the gate cap and over the first dielectric segment, wherein the second dielectric layer fills the opening. Etching the second dielectric layer to form a plurality of first vias over at least a subset of the conductive contacts. Forming a conductive material to fill the first via. A planarization process is performed to remove a portion of the conductive material and a portion of the second dielectric layer, thereby forming a plurality of first vias in the first vias.
In some embodiments, at least some of the first vias bridge with each other after etching the second dielectric layer. In some embodiments, the first dielectric segment has an etch selectivity with the second dielectric layer and prevents the conductive contact located thereunder from being etched during etching back the first dielectric layer or during etching the second dielectric layer. In some embodiments, the planarization process is performed until the gate cap is reached. In some embodiments, after etching the second dielectric layer but before forming the conductive material, further comprising: the second dielectric layer and gate cap are etched to form a plurality of second vias over at least a subset of the gate structures. In some embodiments, the forming of the conductive material fills the second via and the performing of the planarization process forms a plurality of second vias in the second via. In some embodiments, the gate structure comprises a first gate structure; the conductive contact comprises a first conductive contact; etching at least one second via to laterally cross the first gate structure and first conductive contact; and forming a slotted contact in the at least one second via, the slotted contact electrically connecting the first gate structure with the first conductive contact. In some embodiments, the providing includes forming a plurality of gate caps, the gate caps including silicon nitride; forming the first dielectric layer comprises forming zirconium oxide; and forming the second dielectric layer comprises forming silicon oxide.
The components of several embodiments are summarized above so that those skilled in the art to which the present invention pertains can more clearly understand the orientation of the embodiments of the present invention. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure. For example, by making the bit line (bit line) conductor and word line (word line) conductor have different thicknesses, these conductors can be made to have different resistances. However, other techniques for changing the resistance of the metal conductor may also be used.
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