阅读说明：本技术 一种管状材料内表面进行mpcvd的方法及装置 (A kind of tubular material inner surface carries out the method and device of MPCVD ) 是由 满卫东 于 2019-09-20 设计创作，主要内容包括：本发明公开了一种管状材料内表面进行MPCVD的方法及装置。方法包括：将管状材料放置于微波等离子体基片台上；将一根金属丝沿管状材料中轴线方向穿过管状材料,所述金属丝上绑缚有金属尖端；打开微波等离子体化学气相沉积装置,在管状材料内表面进行沉积镀膜。装置包括微波系统、真空系统、供气系统和等离子体反应室,所述等离子体反应室内设有一自旋转基片台,所述自旋转基片台用于放置管状材料,所述等离子反应室还包括用陶瓷支撑物,所述陶瓷支撑物上支撑有金属丝,所述金属丝能够沿管状材料中轴线方向穿过管状材料,所述金属丝表面绑缚有金属尖端。本发明能够实现在管状材料内部均匀镀膜,并且具有工艺简单、能耗低、镀膜均匀等优点。(The invention discloses the method and devices that a kind of tubular material inner surface carries out MPCVD.Method includes: that tubular material is placed on microwave plasma chip bench；One one metal wire is passed through into tubular material along tubular material central axes direction, bondage has metal tip on the wire；Microwave plasma CVD device is opened, carries out deposition plating in tubular material inner surface.Device includes microwave system, vacuum system, air supply system and plasma-reaction-chamber, a spinning chip bench is equipped in the plasma-reaction-chamber, the spinning chip bench is for placing tubular material, the plasma reaction chamber further includes with ceramic support, wire is supported by the ceramic support, the wire can pass through tubular material along tubular material central axes direction, and the wire surface bondage has metal tip.The present invention can be realized the uniform coated inside tubular material, and have many advantages, such as that simple process, low energy consumption, plated film is uniform.)

1. a kind of method that tubular material inner surface carries out MPCVD, which comprises the steps of:

(1) tubular material is placed on microwave plasma chip bench；

(2) one metal wire is passed through into tubular material along tubular material central axes direction, bondage has metal tip on the wire End；

(3) microwave plasma CVD device is opened, carries out deposition plating in tubular material inner surface.

2. the method that a kind of tubular material inner surface carries out MPCVD according to claim 1, which is characterized in that institute Stating tubular material is ceramic tube.

3. the method that a kind of tubular material inner surface carries out MPCVD according to claim 1, which is characterized in that institute Stating wire is metal material resistant to high temperature.

4. a kind of method that tubular material inner surface carries out MPCVD according to claim 3, which is characterized in that institute Stating metal material is tungsten, molybdenum or rhenium.

5. the method that a kind of tubular material inner surface carries out MPCVD according to claim 1, which is characterized in that institute Stating material used in metal tip is refractory metal material.

6. a kind of method that tubular material inner surface carries out MPCVD according to claim 5, which is characterized in that institute Stating refractory metal material is tungsten, molybdenum or rhenium.

7. the method that a kind of tubular material inner surface carries out MPCVD according to claim 1, which is characterized in that In The diamond film of tubular material inner surface depositing homogeneous thickness.

8. the device that a kind of tubular material inner surface carries out MPCVD, which is characterized in that described device includes microwave system, true Empty set system, air supply system and plasma-reaction-chamber, the plasma-reaction-chamber is interior equipped with a spinning chip bench, described For placing tubular material, the microwave system enters in plasma-reaction-chamber for generating microwave to swash spinning chip bench It sends out the gas that air supply system provides and generates plasma ball；The plasma reaction chamber further includes with ceramic support, the pottery Wire is supported by porcelain supporter, the wire can pass through tubular material, the gold along tubular material central axes direction Belonging to the bondage of silk table face has metal tip.

9. a kind of device of tubular material inner surface progress MPCVD according to claim 8, which is characterized in that institute Stating ceramic support is ceramic material resistant to high temperature.

10. a kind of device of tubular material inner surface progress MPCVD according to claim 9,

It is characterized in that, the ceramic material resistant to high temperature is aluminium oxide or silicon carbide.

Technical field

The invention belongs to microwave plasma CVD technical fields, more particularly to one kind in medium

The method and device of inner surface plasma activated chemical vapour deposition.

Background technique

Plasma is the 4th state as substance after solid-state, liquid, gaseous state, is had in many fields

Be widely applied.And substance to be made to be in plasmoid, it is necessary to provide certain energy.Microwave is as one Kind electromagnetic wave, is relatively easy to gas being excited into plasmoid, therefore microwave plasma body technique obtains in many fields To being widely applied.

Microwave plasma CVD (MPCVD) device generally comprises microwave system, vacuum system, gas supply system System and plasma-reaction-chamber, are equipped with a spinning chip bench in plasma-reaction-chamber, the microwave that microwave system generates into Enter plasma-reaction-chamber, above spinning chip bench excite air supply system provide gas generate plasma ball, wait from Daughter ball is tightly attached to film forming substrate material surface, joins by adjusting different reaction gas and the technique for adjusting plasma Number, can be in chip bench surface depositing diamond film.Since microwave method belongs to electrodeless discharge, the plasma of generation is living Property it is high, plasma density is big, therefore is the preferred method for much preparing CVD diamond film.

However, carrying out MPCVD inside tubular material due to the blocking of tube wall, microwave is difficult excitation in pipe and generates Plasma can not just be deposited without plasma.If needed in order to excite plasma in tubular material The Microwave Power Density of input vacuum chamber is improved, this energy input to entire microwave system, the cooling etc. to deposit surface More stringent requirements are proposed；And whole high Microwave Power Density can significantly promote the temperature of deposited material growing environment, lead It causes deposited material growth to be suppressed, or even can not deposit.

Summary of the invention

The purpose of the present invention is to provide the method and devices that a kind of tubular material inner surface carries out MPCVD.

To achieve the above object, the present invention takes following technical scheme: a kind of tubular material inner surface progress The method of MPCVD, includes the following steps:

(1) tubular material is placed on microwave plasma chip bench；

(2) one metal wire is passed through into tubular material along tubular material central axes direction, bondage has metal tip on the wire End；

(3) microwave plasma CVD device is opened, carries out deposition plating in tubular material inner surface.

Further, in the above method, the tubular material is ceramic tube.Further, in the above method, the gold Category silk is metal material resistant to high temperature；Preferably, described

Metal material is tungsten, molybdenum or rhenium.Further, in the above method, material used in the metal tip is high temperature resistant Metal material；It is excellent

Choosing, the refractory metal material is tungsten, molybdenum or rhenium.Further, in the above-mentioned methods, the table in tubular material The diamond film of face depositing homogeneous thickness.The present invention also provides the device that a kind of tubular material inner surface carries out MPCVD, institutes Stating device includes microwave system, vacuum system, air supply system and plasma-reaction-chamber, is equipped in the plasma-reaction-chamber One spinning chip bench, the spinning chip bench is for placing tubular material, and the microwave system is for generating microwave entrance The gas for exciting air supply system to provide in plasma-reaction-chamber generates plasma ball；The plasma reaction chamber further includes With ceramic support, it is supported by wire in the ceramic support, the wire can be along tubular material central axes direction Across tubular material, the wire surface bondage has metal tip.

Further, in above-mentioned apparatus, the ceramic support is ceramic material resistant to high temperature；Preferably, described resistance to The ceramic material of high temperature is aluminium oxide or silicon carbide.

Further, in above-mentioned apparatus, the spinning excitation bench is circle.The present invention is in tubular material central axes The purpose that position introduces an one metal wire is that the characteristic of metal material surface is easily adhered to using plasma, outside tubular material It is diffused into inside tubular material by the plasma that microwave-excitation generates along wire；Bondage metal tip on the metal filament, It can use metal material in microwave field and be easy to produce " point discharge " phenomenon, it can be under lower microwave energy density in office Portion generates higher electric field and concentrates, to generate microwave discharge in metal tip, thus generate the grade of activity required for plated film from Daughter, in tubular material inner surface deposition plating.

The present invention has following technical characterstic: the present invention overcomes the deposition platings inside tubular material in the prior art Defect can be realized and uniformly plated inside tubular material by introducing wire and bondage metal tip on the metal filament Film, and have many advantages, such as that simple process, low energy consumption, plated film is uniform.

Detailed description of the invention

Fig. 1 plasma reaction chamber schematic diagram of internal structure of the present invention.

Fig. 2 wire of the present invention and bondage metal tip partial schematic diagram.

The ceramic pipe internal surface depositing diamond film thickness distribution situation of Fig. 3 embodiment 1.

The ceramic pipe internal surface depositing diamond film thickness distribution situation of Fig. 4 comparative example 1.

The ceramic pipe internal surface depositing diamond film thickness distribution situation of Fig. 5 embodiment 2.

The ceramic pipe internal surface depositing diamond film thickness distribution situation of Fig. 6 comparative example 2.

Appended drawing reference: 1. plasmas；2. tubular material；3. metal prong；4. wire；5. ceramic support；6. Chip bench.

Specific embodiment in order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below will be to this The technical solution of inventive embodiments carries out clear, complete description.Obviously, described embodiment is a part of the invention Embodiment, instead of all the embodiments.Based on described the embodiment of the present invention, those of ordinary skill in the art are in nothing Every other embodiment obtained under the premise of creative work is needed, protection scope of the present invention is belonged to.

Unless otherwise defined, technical term or scientific term used in the disclosure should be fields of the present invention The ordinary meaning for inside thering is the personage of general technical ability to be understood.

Tubular material inner surface of the present invention carries out the device of MPCVD, including microwave system, vacuum system, air supply system And plasma-reaction-chamber, the plasma-reaction-chamber is interior to be equipped with a spinning chip bench, and the spinning chip bench is used for Tubular material is placed, the microwave system is used to generate microwave and enters the gas for exciting air supply system to provide in plasma-reaction-chamber Body generates plasma ball；The plasma reaction chamber further includes using ceramic support, is supported by gold in the ceramic support Belong to silk, the wire can pass through tubular material along tubular material central axes direction, and the wire surface bondage has metal Tip.

Fig. 1 is plasma reaction chamber schematic diagram of internal structure of the present invention, includes microwave plasma spherical in shape

1, circular chip bench 6 places tubular material 2 on the chip bench 6, and wire 4 is from 2 axis of tubular material Line direction passes through, and both ends ceramic support 5 supports, metal prong 3 of the bondage with tip on wire 4.