阅读说明：本技术 用于容器的等离子体处理的设备和方法 (Apparatus and method for plasma treatment of containers ) 是由 M·赫尔博特 B·贝耶斯多尔夫 于 2019-11-22 设计创作，主要内容包括：本发明涉及一种用于容器(5)的等离子体处理的设备,该设备包括用于生成过程气体混合物的过程气体发生器(100)并且包括至少一个涂布站(3),所述涂布站包括具有处理位置(40)的至少一个等离子体室(17),在所述等离子体室中具有容器内部(5.1)的至少一个容器(5)可以被插入并被定位在处理位置(40)处,每个等离子体室(17)是至少部分可抽空的以便通过容器(5)吸入由过程气体发生器(100)提供的过程气体,容器的内部因此借助于等离子体处理被提供内部涂布,并且压力测量设备(79,96-98)被提供在设备的预定点处以便确保过程稳定性。根据本发明,至少在设备的一些预定点处的压力测量设备(96-98)包括依赖于气体类型的压力换能器(86)。(The invention relates to a device for plasma treatment of containers (5), comprising a process gas generator (100) for generating a process gas mixture and comprising at least one coating station (3) comprising at least one plasma chamber (17) with a treatment location (40) in which at least one container (5) with a container interior (5.1) can be inserted and positioned at the treatment location (40), each plasma chamber (17) being at least partially evacuable so as to suck in process gas provided by the process gas generator (100) through the container (5), the interior of the container thus being provided with an internal coating by means of the plasma treatment, and a pressure measuring device (79, 96-98) being provided at a predetermined point of the device so as to ensure process stability. According to the invention, the pressure measuring device (96-98) at least at some predetermined points of the device comprises a pressure transducer (86) dependent on the type of gas.)

1. An apparatus for plasma treatment of containers (5) with a process gas generator (100) for generating a process gas mixture and at least one coating station (3) comprising at least one plasma chamber (17) with a treatment station (40), wherein at least one container (5) with a container interior (5.1) can be replaced and positioned at the treatment station (40) in the plasma chamber, wherein the respective plasma chamber (17) is configured to be at least partially evacuable for sucking process gas provided by the process gas generator (100) through the container (5), which provides the interior coating thereof by means of plasma treatment, and wherein a pressure measuring device (79, 96-98) is provided at a predetermined position of the apparatus for ensuring process stability,

it is characterized in that

The pressure measurement device (79, 96-98) comprises a gas type dependent pressure transducer (86) at least at a part of a predetermined position of the device.

2. The device of claim 1, wherein the pressure measurement devices (96-98) that measure the pressure in the process gas generator (100) each comprise a gas type dependent pressure transducer (86) and a gas type independent pressure transducer (99).

3. The apparatus of claim 2 wherein a relative deviation between pressure values measured by the gas type dependent pressure transducer (86) and pressure values measured by the gas type independent pressure transducer (99) can be evaluated to control process gas composition.

4. Device according to any one of claims 1 to 3, wherein at least one pressure measuring device (79) measuring the pressure in the plasma chamber (17) of the coating station (3) comprises only a pressure transducer (86) depending on the gas type.

5. Apparatus according to claim 4, wherein the change of the process quality, in particular the process gas mixture, in the plasma chamber (17) of the coating station (3) can be determined from the pressure values measured by a gas type-dependent pressure transducer (86).

6. The device according to claim 4 or 5, wherein the type of process influence can be determined from the pressure value measured by a gas type dependent pressure transducer (86).

7. Apparatus according to claim 4, 5 or 6, wherein, in the case of a plurality of coating stations (3), a change in the process gas mixture in the respective plasma chamber (17) can be inferred by evaluating the pressure values that can be measured there in the plasma chamber (17).

8. The device according to any one of claims 4 to 7, wherein the pressure values measured by the gas-type dependent pressure transducer (86) can be combined with further measured values of process identification to produce a diagnosis for accelerated troubleshooting.

9. Apparatus according to any one of claims 1 to 8, wherein the gas type dependent pressure transducer (86) is a Pirani load cell.

10. The apparatus of claim 9, wherein the Pirani load cells are each verifiable based on two gases of different thermal conductivity in combination with a pressure transducer (99) independent of gas type for determining the gas composition when coating the PET bottle with a SiOx diffusion barrier, and wherein the Pirani load cells are each correctable in the event of a deviation.

11. A method for plasma treatment of a container (5) in a plasma treatment apparatus, comprising the method steps of:

-generating a process gas mixture by means of a process gas generator (100),

-inserting and positioning a container (5) having a container interior (5.1) at a processing station (40) of at least one plasma chamber (17) of a coating station (3),

-at least partially evacuating the respective plasma chamber (17) to suck process gas provided by the process gas generator (100) through the container (5) to provide the interior of the container with an internal coating by plasma treatment, and

-measuring the pressure with a pressure measuring device (79, 96-98) at a predetermined position of the plasma processing device to ensure process stability,

it is characterized in that the preparation method is characterized in that,

-measuring the pressure at a predetermined location of the plasma processing device with a pressure measuring device (79, 96-98) comprising a gas type dependent pressure transducer (86).

12. The method of claim 11, wherein the plasma processing apparatus is an apparatus according to any one of claims 1 to 10.

Technical Field

The invention relates to an apparatus for plasma treatment of containers having the features of the preamble of claim 1. The invention further relates to a method for plasma treatment of containers having the features of the preamble of claim 11. Such an apparatus and such a method are known, for example, from WO 2017/102280 a 2.

Background

The process gas generator of WO 2017/102280 a2 mixes a process gas mixture of O2, Ar, HMDSO (hexamethyldisiloxane) and HMDSN (hexamethyldisilazane). The mass flow controller dosimets the supplied process gas from the gas phase and the vacuum of the vacuum system draws in the supplied process gas through the coating station. In the coating station, the process gas reacts to create a barrier layer in the bottle. Several parameters determine the pressure conditions in the system: gas flow rate, pumping speed of the vacuum pump and conductivity values of the piping (depending on pipe length and cross section). If the above parameters are known with sufficient accuracy, the pressure ratio at any point in the system can be calculated. Generally, the highest absolute pressure is in the gas generator, and the lowest absolute pressure is the suction pressure directly at the inlet of the vacuum pump(s).

For any type of bottle to be coated, a special recipe is created which defines, among other things, the process gas mixture of O2, Ar, HMDSO and HMDSN. The mixture does not change during the operation of the machine (in the case of the selected recipe). Since the relevant ducts also do not change significantly, very stable pressure conditions are created during the coating operation or in the standby phase when no bottles are currently being coated in the apparatus. Only when stable conditions are reached in the vacuum system, the apparatus is released for coating. Due to the described stability (pressure gradient) of the system, the pressure value that can be expected for a given recipe can be calculated and measured under normal conditions. For the set process gas mixture, a characteristic pressure gradient is produced, since the pipe conductivity values and the pumping speed of the apparatus do not change practically. However, the absolute pressure in the gas generator may depend on the operating conditions of the plant. The absolute pressure of the process gas mixture in the process gas generator is measured with a pressure transducer which is independent of the gas type. For process control, it is evaluated whether the measured pressure is within a specified range.

In a pressure transducer independent of the gas type, a so-called diaphragm vacuum gauge, for example, a pressure p acts on a diaphragm having a defined area a and deflects the diaphragm in proportion to the pressure. The sensor measures the deflection. For example, in the simplest case, the mechanism transmits the deflection to a pointer that moves over the pressure scale. Piezoresistive or capacitive sensors pick up a pressure signal and convert the pressure signal into an electrical signal.

A disadvantage of the gas-type-independent pressure transducers used exclusively to date is their inability to detect gas components, which is why process control is carried out without taking into account the gas components. Another disadvantage is that pressure transducers independent of gas type are relatively expensive, which makes their use uneconomical at all relevant measurement locations of the plasma processing apparatus, and those pressure transducers may require approval by the german federal economic and export control office (BAFA).

Disclosure of Invention

It is therefore an object of the present invention to provide an apparatus and a method for plasma treatment of containers which ensure improved process control with increased economic efficiency.

This object is solved for a generic device and for a generic method by the characterizing features of the respective independent claims. The dependent claims refer to advantageous embodiments of the device according to the invention. The invention therefore provides for: the pressure measurement device comprises a gas type dependent pressure transducer at least at a part of the predetermined location of the device. The use of a gas-type-dependent pressure measurement makes it possible to draw conclusions about the properties of the respective gas, for example about the state of the gas mixture, i.e. its constancy or variation, from the determined pressure values. Such statements cannot be made with pressure measurements independent of the gas type.

Pirani thermal conductivity vacuum gauges (Pirani gauges or load cells) use a pressure transducer to measure pressure based on the following principle: the thermal conductivity of a gas depends within certain limits on the pressure. The Pirani load cell has a gas type dependency due to the principle of calorimetric measurement, where the heat loss from the heating wire is measured, which is caused by residual gas. For this reason, Pirani load cells may be advantageously used in the present invention as gas type dependent pressure transducers.

Advantageously, in the case of several coating stations, a change in the process gas mixture in the respective plasma chamber can be inferred by evaluating the measured pressure values, which can be measured in a plasma chamber with a pressure transducer depending on the gas type. Changes in the process gas mixture may have global causes, for example, due to contaminated process raw materials, failure of the gas supply (flow control of raw materials), or leaks in the gas generator. Local causes are also possible, in particular caused by leaks into the vacuum system. Furthermore, by evaluating the measurement signals from several coating stations measured by the gas-type-dependent pressure transducers, it is possible to distinguish between global and local causes of changes in the process gas mixture and to constrain the fault location responsible for this.

Advantageously, at least for the plasma chamber of the coating station, the pressure measuring device connected there uses only a pressure transducer which is dependent on the gas type. The gas type dependent pressure measurement provided according to the invention may advantageously be combined with gas type independent pressure measurements known from the prior art discussed above. Based on two different gases, for example different thermal conductivities, the process gas composition during coating of PET bottles with SiOx diffusion barrier layers can be determined and, if necessary, corrected in the case of measurement deviations.

The simultaneous measurement of the pressure as an absolute value by a pressure transducer independent of the gas type and as a value dependent on the gas type by a pressure transducer suitable for this purpose enables the stoichiometry of the process gas to be determined in the process gas generator. This enables detection of error patterns that may be caused by a Mass Flow Controller (MFC). Furthermore, the stoichiometry of the process gas can be determined during the ongoing production.

Simultaneous measurement of the pressure as an absolute value and as a value dependent on the type of gas also enables detection of the gas supplied by the respective mass flow controller. For example, during ongoing production, leaks at the mass flow controller may be detected. Finally, the previously required test routine (the abliter routine) for the mass flow controller is eliminated, thereby reducing service time.

Advantageously, the relative deviation (precursor concentration) between the pressure values measured by the gas-type independent pressure transducer and the pressure values measured by the gas-type dependent pressure transducer can be evaluated to control the process gas composition.

Furthermore, the type of influence of the process can advantageously be determined from the pressure values measured by the gas-type-dependent pressure transducer.

Furthermore, the pressure values measured by the gas-type dependent pressure transducer may advantageously be combined with other measurements of the process characteristics to create diagnostics to speed troubleshooting. In order to ensure a reliable coating of the interior of the bottle when a mixture of at least two gases is used in the following respective process sections: it is important that the adhesion promoter, barrier layer and topcoat (adhesion promoter: O2/HMDSO, barrier layer: O2/HMDSN, topcoat: Ar/HMDSO) are accurately maintained and monitored in the mixing ratio of the respective processes. It may happen that: mass flow controllers used for gas dosimetry set incorrect gas flow due to defects. Since there is no rapid way of checking the coating quality (permeation measurements usually take one to two days), deviations in the process gas composition that reduce the coating quality must be detected and corrected directly in the process.

If the pressure p of the process gas supplied to the cylinder is known, the gas composition can be monitored by using a Pirani load cell depending on the gas type.

This principle will be described below: in general, the following applies to the pressure in the pumped volume into which the gas flow f is introduced:

here, p_bIs the base pressure that occurs in the absence of gas flow, and a (f) is a function that describes the change in pressure as a function of gas flow f. When the pressure-dependent conductivity remains unchanged, which is given in a sufficiently large range around the process pressure, a (f) is a linear function, so thatThe method is applicable.

Since the total pressure in a system with two gases can be written as the sum of the partial pressures, the following applies at different flow rates f₁And f₂Two different gases flowed:

by measuring the resulting pressure, function, at different gas flowsAndcan be readily determined by experimentation. The same applies to the gas type dependent pressure measured with a Pirani load cell:

。

function(s)Andand can be readily determined by experimentation. Standard flow for corresponding processAndpressure valueAnd are known. If one or both fluxes change with the new valueAndwhen the pressure value is generated, two new pressure values appear And. Then, for the corresponding difference between the standard pressure and the new pressure value(difference before/after equation 2) and(difference before/after equation 3) applies:

this results in having two unknownsAndtwo equations ofAnd ) The unknowns represent the deviation of the two flows from the set flow. By rearranging the system of equations and solvingAndthe deviation of the two process gas flows from the set point can then be calculated. In this way, the set point can be quickly detected and correctedThe deviation of the flow rate, so that process reliability is ensured.

The measurement independent of the gas type is preferably carried out directly after mixing the process gas by means of a membrane-based pressure transducer. The measurement of the pressure depending on the type of gas by the Pirani load cell is advantageously carried out in the coating station. The pressure in the coating station, independent of the type of gas, can be calculated using the known conductivity values of the pipes up to the station. It is to be understood that the features and embodiments explained above and below are disclosed not only in the combination indicated in any case, but also to be regarded as belonging to the disclosure in their individual positions and in other combinations.

Drawings

In the following, the invention is explained in more detail with reference to the drawings with preferred embodiments. The figures show:

FIG. 1 is a schematic block diagram of a preferred embodiment of a coating station of an apparatus for plasma treatment of containers according to the invention, an

Fig. 2 is a schematic block diagram of a preferred embodiment of a process gas generator of an apparatus for plasma treatment of containers according to the present invention.

Detailed Description

Fig. 1 shows a schematic block diagram at a processing station 40 of a coating or plasma station 3, which may be arranged once or several times in the plasma chamber 17. In the plasma chamber 17, the container 5 is inserted and positioned in the chamber interior 4 in a gas-tight and/or air-tight manner. In the present case, the chamber base 30 therefore has a vacuum channel 70. The vacuum channel 70 opens with its first side 70.1 into the plasma chamber 17 or, depending on the position of the gas lance 36, also establishes a gas-permeable connection to the vessel interior 5.1 of the vessel 5. In particular, provision can be made for: in the state in which the gas lance 36 is retracted into the vessel interior 5.1, the vessel interior 5.1 is isolated, i.e. sealed, from the chamber interior 4, whereas in the lowered state of the gas lance 36 a gas-permeable connection is created between the vessel interior 5.1 of the vessel 5 and the chamber interior 4.

Furthermore, at least a first to a fifth vacuum line 71.. 75 and at least one ventilation line 76 can be connected to the second side 70.2 of the vacuum channel 70, wherein in particular the ventilation line 76 can be connected or disconnected via an adjustable and/or controllable valve device 76.1. Furthermore, each of the first to fifth vacuum lines 71.. 75 may each comprise at least one adjustable and/or controllable valve device 71.1.. 75.1, wherein the valve device 71.1.. 76.1 is designed to be controllable via a machine controller of the device for plasma treatment of the containers 5, which machine controller is not shown in more detail.

At the end of the second side 70.2 facing away from the vacuum channel 70, the first to fifth vacuum lines 71.. 75 are preferably in fluid-tight connection with a vacuum device 77 common to all vacuum lines 71.. 75. In particular, the vacuum device 77 is configured to generate the vacuum required in the plasma chamber 17 and in the container interior 5.1 during plasma treatment. Furthermore, the vacuum device 77 is configured to generate different negative pressures at the first to fifth vacuum lines 71.. 75, i.e. a negative pressure level for each vacuum line 71.. 75. Preferably, the fifth vacuum line 75 has a greater vacuum, i.e. a lower vacuum level, than the first vacuum line 71. In particular, the vacuum level may be further reduced with each vacuum line 71.. 75, such that the fifth vacuum line 75 has the lowest vacuum level. Alternatively, however, it is also possible to connect each vacuum line 71.. 75 to a separate vacuum device 77.

In particular, the plasma chamber 17 and/or the container interior 5.1 can be reduced to different vacuum levels via the first to fifth vacuum lines 71.. 75. For example, the plasma chamber 17 comprising the container interior 5.1 can be lowered to a first vacuum level via the first vacuum line 71 when the valve device 71.1 is open, while a lower vacuum level than the first vacuum level is created both in the plasma chamber 17 and in the container interior 5.1, for example when the valve device 72.1 of the second vacuum line 72 is open. Furthermore, provision can also be made for: for example, the fifth vacuum line 75 is formed as a process vacuum line that is opened in synchronization with the supply of the process gas during the plasma processing to maintain vacuum. In this way, the process vacuum line provided prevents the extracted process gas from being diverted into the supply circuit of further vacuum lines, for example the first to fourth vacuum lines 71.. 74.

Also, a pressure measuring device 78, for example in the form of a pressure measuring tube, which is configured to detect the negative pressure generated via the first to fifth vacuum lines 71.. 75, may be assigned to the first to fifth vacuum lines 71.. 75. In particular, the upstream valve device 78.1 may be assigned to the pressure measuring device 78, and the pressure measuring device 78 may be arranged in the fluid connection of the second vacuum line 72 to the second side 70.2 of the vacuum channel 70.

Furthermore, the gas lance 36 can be coupled via an exemplary central process gas line 80 with exemplary first to third process gas lines 81.. 83, wherein different process gas components can be supplied via the first to third process gas lines, in particular by the gas lance 36, to the vessel interior 5.1. Each of the first to third process gas lines 81.. 83 may furthermore have at least one valve device 81.1.. 83.1 each, which may be regulated and/or controlled, for example, via a central machine control system of the device for plasma treatment of the containers. The central process gas line 80 may therefore also comprise such a controllable and/or adjustable valve device 80.1.

Furthermore, preferably, between the valve device 80.1 of the central process gas line 80 and the valve device 81.1.. 83.1 of the first to third process gas lines 81.. 83, at least one bypass line 84 branches off in a fluid-tight manner with its first side 84.1, wherein the second side 84.2 of the bypass line also opens in a fluid-tight manner into one of the first to fifth vacuum lines 71.. 75. In the event of a failure of the coating station 3, the bypass line 84 is configured to divert the process gas flowing in via the first to third process gas lines 81.. 83 before it is fed into the plasma chamber 17, advantageously into one of the first to fifth vacuum lines 71.. 75. Particularly advantageously, the bypass line 84 opens with its second side 84.2 in a fluid-tight manner into the vacuum line of the central vacuum device 77 having the lowest vacuum level, i.e. according to the exemplary embodiment of fig. 1 into the fifth vacuum line 75. In an alternative embodiment, the bypass line 84 can also lead in a fluid-tight manner to a separate vacuum device, not shown.

Further, the bypass line 84 includes: at least one valve device 84.3 which can be controlled and/or regulated via a central machine control of the plasma treatment device, and at least one controllable and/or adjustable throttle device 84.4 for flow throttling or limiting the volumetric flow of the process gas flowing through the bypass line 84. For example, the throttle device 84.4 can be configured as a controllable and/or adjustable sleeve valve and therefore, in particular, it can be configured for limiting the volume flow of the process gas flowing through the bypass line 84. In particular, a throttle device 84.4 is provided downstream of the valve device 84.3 in the bypass line 84 in the flow direction indicated by the arrow.

Particularly advantageously, the throttle device 84.4 can dimension the inner tube cross section of the bypass line 84 and/or adjust the inner tube cross section of the bypass line 84 such that the volume flow of the process gas diverted through the bypass line 84 approximately corresponds to the volume flow of the process gas supplied to the respective coating station 3 via the central process gas line 80 during the application of the process gas. In other words, the inner tube cross section of the bypass 84 is selected or adjusted by the throttle device 84.4 such that the vacuum conductance in the bypass 84 during the discharge of the process gas is approximately the same as the vacuum conductance in the central process gas line 80 during the application of the process gas for the plasma treatment.

Furthermore, the sixth vacuum line 85 can also be connected directly and in particular fluid-tightly with the first side 85.1 to the plasma chamber 17 or flow into the plasma chamber 17 and interact with the central vacuum device 77 via the fifth vacuum line 75 with the second side 85.2 in a fluid-tight manner with the interposition of an adjustable and/or controllable valve device 85.3. The sixth vacuum line 85 is associated with a pressure measuring device 79 for measuring, inter alia, the negative pressure inside the plasma chamber 17. According to the invention, the pressure measuring device 79 comprises a pressure transducer 86 depending on the type of gas. From the pressure values measured by the gas-type-dependent pressure transducer 86, the process quality, in particular the change in the process gas mixture, in the coating station 3 can be determined. Furthermore, the type of process effect may be determined from the pressure values measured by the gas type dependent pressure transducer 86. Finally, the pressure values measured by the gas-type dependent pressure transducer 86 may be combined with further measurements of the process identification to create a diagnostic for accelerated troubleshooting. In the case of several coating stations, it is possible to distinguish between global and local causes by evaluating the pressure values of the gas-type-dependent pressure sensors 86 provided there, and the fault can be limited to one location.

A typical process at an exemplary coating station 3 without operational failure is explained below using an example of a coating process, wherein the process for plasma treatment of containers 5 takes place at a plasma treatment apparatus with several coating stations 3 with corresponding treatment stations 40 on a plasma wheel.

In this process, the respective containers 5 are first transported to the plasma wheel using the input wheel and, in the pushed-up state of the sleeve-like chamber walls, the containers 5 are inserted into the corresponding coating station 3. After the insertion process is completed, the respective chamber wall at this coating station 3 is lowered to its sealing position and initially both the chamber interior 4 and the container interior 5.1 of the container 5 are evacuated simultaneously.

After sufficient evacuation of the chamber interior 4, the corresponding gas lance 36 is moved into the container interior 5.1 of the container 5 and sealing of the container interior 5.1 with respect to the chamber interior 4 is effected by displacing the sealing element. It is also possible that the gas lance 36 has been moved into the container 5 in synchronism with the start of the evacuation of the chamber interior 4. Subsequently, the pressure in the container interior 5.1 can be reduced even further. Furthermore, the positioning movement of the gas lance 36 may already be at least partially parallel to the positioning of the chamber wall. After a sufficiently low vacuum has been reached, at the respective coating station 3, process gas is introduced into the container interior 5.1 of the container 5 and the plasma is ignited by means of a microwave generator. In particular, plasma may be used to deposit both an adhesion promoter and a practical barrier and protective layer of silicon oxide on the inner surface of the vessel 5.

After the coating process, i.e. the plasma treatment, is completed, the gas lance 36 is removed, i.e. lowered, from the vessel interior 5.1 and simultaneously with or before the lowering of the gas lance 36, at least the vessel interior 5.1 of the vessel 5 and, where applicable, the plasma chamber 17 are at least partially ventilated.

If at least one of the coating stations 3 is subject to an operational failure, the process gas of the at least one coating station 3 having the operational failure is diverted through the bypass line 84 when the process gas is introduced or supplied into the corresponding plasma chamber 17. Thus, at the at least one further coating station 3 of the apparatus for plasma treatment, which has no operational disturbances and is now in the same process step entered by the process gas, no additional process gas is conducted through the central process gas supply unit. This is because a predetermined portion or quantity of the process gas for the coating station 3 in operational failure is diverted via the bypass line 84. Thus, at the at least one further operating coating station 3, the quality of the plasma coating is not degraded, since the treated containers 5 are impinged with a predetermined amount of process gas. Since the process gas flowing to at least one coating station 3 having an operational failure is diverted by the bypass line 84, the coating process can be operated or continued at the remaining coating stations 3 provided on the apparatus for plasma treatment or at their treatment stations 40 with a consistently high coating quality. First, after the plasma chamber 17 has been closed, for example, the first and sixth valve devices 71.1 and 85.3 are opened at the at least one perfectly operating plasma chamber 17, i.e. not subject to any operational failure, and thus the container interior 5.1 and the chamber interior 4 of the plasma chamber 17 are evacuated via the first and sixth vacuum lines 71 and 85, respectively. Preferably, the valve device 80.1 of the central process gas line 80 is closed during opening. In particular, during the evacuation of the vessel interior 5.1 and of the plasma chamber 17, the valve arrangement 76.1 of the exhaust line 76 is also closed. After closing the first valve device 71.1, for example, the second valve device 72.1 can be opened and thus the container interior 5.1 can be lowered to a lower pressure level via the second vacuum line 72. Also, the vessel interior 5.1 and/or the plasma chamber 17 can still be lowered to a further lower vacuum level via the third or fourth vacuum line 73, 74, if this is necessary for the coating process. After a sufficiently low pressure level has been reached in the container interior 5.1 and/or in the plasma chamber 17, the corresponding valve device 71.1.. 75.1 may be closed. Alternatively, it is also possible to provide: the fifth valve device 75.1 and the sixth valve device 85.3 remain open, in particular during subsequent processing steps, in order to provide a further sufficiently low pressure level in the container interior 5.1 and in the plasma chamber 17.

In this case, one or more of the first to third valve devices 81.1.. 83.1 of the first to third process gas lines 81.. 83.1 and the valve device 80.1 of the central process gas line 80 can already be opened to the at least one fully operating plasma chamber 17 at the same time or before the gas lance 36 is positioned in the vessel interior 5.1, and a process gas having a predetermined composition and a predetermined gas quantity is supplied to the vessel interior 5.1, in particular via the gas lance 36.

Furthermore, also at the at least one coating station 3 with operational failure, one or more of the first to third valve devices 81.1.. 83.1 of the first to third process gas lines 81.. 83.1 are opened within a predetermined time period with respect to the remaining coating stations 3 provided at the device 1 for plasma treatment 1, while the valve device 80.1 of the central process gas line 80 of this one coating station 3 with operational failure is closed, as a result of which it is not possible for process gas to flow into the corresponding plasma chamber 17. Thus, at least one coating station 3 having an operational failure will be supplied with a process gas quantity corresponding to the process gas quantity predetermined for that coating station 3 in sound operational mode. However, it is particularly preferred that, when one or more of the first to third valve devices 81.1.. 83.1 of the first to third process gas lines 81.. 83 of the at least one coating station 3 having an operational failure is opened, the valve device 84.3 is opened simultaneously or shortly before and the process gas is discharged via the bypass line 84.

In particular, in at least one coating station 3 with operational failure, when the valve device 84.3 of the bypass line 84 is opened, the valve device 80.1 of the central process gas line 80 is closed, so that the process gas provided via the central process gas supply unit is supplied to the central vacuum device 77 via the bypass line 84. In particular, the process gas is thereby discharged via the fifth vacuum line 75. In particular, the process gas can be fed to the coating station 3 or the respective treatment station 40 via a rotary distributor provided in the center of the plasma wheel, whereby the actual process gas distribution can be carried out via a ring line.

After a sufficient supply of process gas, the microwave generator ignites the plasma in the vessel interior 5.1 of the vessel 5. In this context, it can be provided that: for example, the valve device 81.1 of the first process gas line 81 is closed at a predetermined time, while the valve device 82.1 of the second process gas line 82 is opened to supply the process gas of the second component. At least temporarily, the fifth valve device 75.1 and/or the sixth valve device 85.3 can also be opened to maintain a sufficiently low underpressure, in particular in the container interior 5.1 and/or the treatment chamber 17. In this case, a pressure level of about 0.3 mbar has proven to be suitable.

After the plasma treatment is completed, all valve devices 71.1.. 83.1 of the first to third process gas lines 81.. 83.1 and 71.1.. 75.3 of the first to sixth vacuum lines 71.. 75, 85, which are still open at this time, are closed, while the valve device 76.1 of the venting line 76 is opened and at least the container interior 5.1 of the container 5 is at least partially vented after the plasma treatment at the at least one treatment station 40 of the coating station 3. Preferably, the interior 5.1 of the container 5 is vented to atmospheric pressure.

Preferably, the venting is performed via gas lances 36 in the vessel interior 5.1. In synchronism with this, the gas lance 36 can be lowered from the vessel interior 5.1. After the vessel interior 5.1 and the plasma chamber 17 have been sufficiently vented, preferably to atmospheric or ambient pressure, the open valve arrangement 76.1 of the vent line 76 is closed. The degassing time of each container 5 is between 0.1 and 0.4 seconds, preferably about 0.2 seconds. After the ambient pressure has been reached in the chamber interior 4, the chamber walls are raised again. The coated containers 5 are then removed or transferred to an output wheel.

Fig. 2 shows a schematic block diagram of an embodiment of a process gas generator 100 which supplies process gases of different compositions to the coating station 3 of fig. 1. Oxygen is supplied to process gas generator 100 via line 87. Argon is supplied to process gas generator 100 via line 88. HMDSN is supplied to the process gas generator 100 via line 89 and HMDSO is supplied to the process gas generator 100 via line 90. Valves are arranged in the lines 87 to 90 for dosimetry or for blocking the respective gas supply. The process gas generator 100 includes three gas mixing units 91, 92 and 93 for supplying process gases of different compositions and two gas heating cylinders 94 and 95. The gas heating cylinder 94 is supplied with HMDSO available at the outlet of the cylinder 94 at a temperature and pressure suitable for mixing the gases in the gas mixing units 91 and 93, the heated HMDSO being supplied to the gas mixing units 91 and 93 via a conduit equipped with a shut-off valve. The gas heating cylinder 95 is supplied with HDMSN available at the outlet of the cylinder 95 at a temperature and pressure suitable for mixing the gas in the gas mixing unit 92, the heated HDMSN being supplied to the gas mixing unit 92 via a pipe equipped with a shut-off valve.

In addition to HMDSO, oxygen and argon are supplied to the gas mixing unit 91 via a pipe equipped with a shut-off valve. In addition to HMDSO, argon gas is supplied to the gas mixing unit 93 via a pipe. In addition to HMDSN, oxygen and argon are supplied to the gas mixing unit 92 via pipes. The gas mixing units 91, 92 and 93 each include a plurality of Mass Flow Controllers (MFCs) and valves for selectively mixing the gases supplied thereto. The gas mixture is available as process gas at the outlet of the gas mixing units 91, 92 and 93. Specifically, the process gas available at the outlet of the gas mixing unit 91 is a gaseous adhesion promoter, the process gas available at the outlet of the gas mixing unit 92 is a barrier gas, and the process gas available at the outlet of the gas mixing unit 93 is a topcoat gas. The pressure of the respective process gas is measured in the lines 81, 82 and 83 by pressure measuring devices 96, 97 and 98, each comprising a gas-type independent pressure sensor 99 and a gas-type dependent pressure sensor 86, which evaluate, inter alia, the relative deviation (precursor concentration) between the pressure values measured by the two pressure sensors 86, 99 for controlling the process gas composition.

The invention has been described above using examples of embodiments. It should be understood that many variations and modifications are possible without departing from the inventive concepts upon which the invention is based.

List of reference numerals

3 coating station

4 indoor part

5 Container

5.1 interior of the Container

17 plasma chamber

30 chamber base

36 gas spray gun

40 processing center

70 vacuum channel

70.1 first side

70.2 second side

71 first vacuum line

71.1 valve device

72 second vacuum line

72.1 valve apparatus

73 third vacuum line

73.1 valve apparatus

74 fourth vacuum line

74.1 valve apparatus

75 fifth vacuum line

75.1 valve apparatus

76 exhaust line

76.1 valve apparatus

77 vacuum equipment

78 pressure measuring device

78.1 valve device

79 pressure measuring device

80 central process gas line

80.1 valve apparatus

81 first process gas line

81.1 valve apparatus

82 second process gas line

82.2 valve apparatus

83 third Process gas line

83.1 valve apparatus

84 bypass line

84.1 first side

84.2 second side

84.3 valve apparatus

84.4 throttling device

85 sixth vacuum pipeline

85.1 first side

85.2 second side

85.3 valve apparatus

86 pressure transducer depending on gas type

87 pipeline

88 pipeline

89 pipeline

90 pipeline

91 gas mixing unit

92 gas mixing unit

93 gas mixing unit

94 gas heating cylinder

95 gas heating cylinder

96 pressure measuring device

97 pressure measuring device

98 pressure measuring device

99 gas type independent pressure transducer

100 process gas generator.