Ceramic substrate and method for manufacturing same
阅读说明：本技术 陶瓷基板及其制造方法 (Ceramic substrate and method for manufacturing same ) 是由 李志炯 于 2020-04-28 设计创作，主要内容包括：本发明提供一种陶瓷基板及其制造方法,其抑制借助陶瓷基底的上下部金属层所占据的体积的差而产生的弯曲现象,尤其在陶瓷基底上的上下部金属层的厚度相同的情况,控制上下部金属层的面积,从而可减少陶瓷基板的不良率。(The invention provides a ceramic substrate and a manufacturing method thereof, which can inhibit the bending phenomenon caused by the difference of the volume occupied by the upper and lower metal layers of a ceramic substrate, especially control the area of the upper and lower metal layers under the condition that the thicknesses of the upper and lower metal layers on the ceramic substrate are the same, thereby reducing the fraction defective of the ceramic substrate.)
1. A ceramic substrate, comprising:
a ceramic substrate;
a first electrode layer formed on an upper portion of the ceramic substrate; and
a second electrode layer formed on a lower portion of the ceramic substrate,
and satisfies the following formula (1):
(Here, V)1Denotes the volume, V, of the first electrode layer2Representing the volume of the second electrode layer).
2. The ceramic substrate according to claim 1,
the first electrode layer and the second electrode layer have the same thickness,
and satisfies the following formula (2):
(Here, S1Denotes the area of the first electrode layer, S2Representing the area of the second electrode layer).
3. The ceramic substrate according to claim 1,
either or both of the first electrode layer and the second electrode layer are provided with a plurality of sub-electrode layers.
4. The ceramic substrate according to claim 3,
the sub-electrode layers separate the electrode layers by means of slits.
5. The ceramic substrate according to claim 4,
the slits include one or more of a first slit for vertically separating the electrode layer and a second slit for horizontally separating the electrode layer.
6. The ceramic substrate according to claim 1,
a camber ratio R defined by the following formula (3) is 0.4% or less,
(here, T represents the shortest length from the highest position of the ceramic substrate to the plane when the ceramic substrate is placed on the plane, T represents the thickness of the ceramic substrate, and L represents the length of the ceramic substrate).
7. The ceramic substrate according to claim 1,
a bonding layer is included between the ceramic substrate and the first electrode layer and between the ceramic substrate and the second electrode layer on either one side or both sides.
8. The ceramic substrate according to claim 1,
the shortest length T from the highest position of the ceramic substrate to the plane and the thickness T of the ceramic substrate0Is the difference of (T-T)0) And length (L) of the ceramic substrate0) Satisfies the following formula (4):
T-t0≤0.004L0formula (4).
9. A method for manufacturing a ceramic substrate, comprising:
a step of preparing a ceramic substrate;
a step of forming a first electrode layer on an upper portion of the ceramic substrate; and
a step of forming a second electrode layer on a lower portion of the ceramic substrate,
and satisfies the following formula (1):
(Here, V)1Denotes the volume, V, of the first electrode layer2Representing the volume of the second electrode layer).
10. The method for manufacturing a ceramic substrate according to claim 9,
the first electrode layer and the second electrode layer have the same thickness,
and satisfies the following formula (2):
(Here, S1Denotes the area of the first electrode layer, S2Representing the area of the second electrode layer).
11. The method for manufacturing a ceramic substrate according to claim 9,
either or both of the first electrode layer and the second electrode layer are provided with a plurality of sub-electrode layers.
12. The method for manufacturing a ceramic substrate according to claim 11,
either one or both of the first electrode layer and the second electrode layer are separated and formed by the slit.
13. The method for manufacturing a ceramic substrate according to claim 9,
the method further includes the step of forming the sub-electrode layers on the ceramic substrate after separating one or both of the first electrode layer and the second electrode layer into the sub-electrode layers, before forming the first electrode layer and the second electrode layer on the ceramic substrate.
14. The method for manufacturing a ceramic substrate according to claim 9,
after the first electrode layer and the second electrode layer are formed on the ceramic substrate, a step of separating either one or both of the first electrode layer and the second electrode layer into sub-electrode layers is further included.
15. The method for manufacturing a ceramic substrate according to claim 14,
the step of separating the sub-electrode layers is to etch and separate the first electrode layer and the second electrode layer by using an etching solution,
the etching solution includes either one or both of ferric chloride and cupric chloride.
Technical Field
The present invention relates to a ceramic substrate and a method for manufacturing the same, and more particularly, to a ceramic substrate and a method for manufacturing the same, which are used to prevent the ceramic substrate from being bent by controlling the volume and area ratio of upper and lower metal layers.
Background
The ceramic substrate is formed by integrally attaching a metal foil such as a copper foil to a ceramic substrate. The ceramic substrate is produced by a manufacturing process such as an AMB (Active Metal Brazing), a DBC (Direct Bond Copper), and the like, and may be classified into an AMB ceramic substrate, a DBC ceramic substrate, and the like according to a difference in the manufacturing process.
The difference is that the DBC ceramic substrate is manufactured by a process of directly bonding an oxidizable metal to a ceramic base, and the AMB ceramic substrate is manufactured by forming a layer by brazing (brazing) an active metal to the ceramic base, and brazing (brazing) the metal to the brazing layer.
In general, after forming a metal layer, both processes are performed by a photolithography (photolithography) process, and then a pattern layer is formed by etching (etching).
However, when metal layers are formed on both surfaces of a ceramic substrate, there is a possibility that a difference in area or thickness of the metal layers may occur depending on the pattern arrangement of both surfaces, and if the difference exceeds a certain ratio, a phenomenon (warp) occurs in which the ceramic substrate is bent under a high temperature environment.
Finally, if the degree of bending exceeds 0.4%, the degree of bending is only at a level that the product is discarded due to failure, and the ratio of the product in this case is a relatively large specific gravity of the whole production amount, thereby causing a problem of continuous production loss.
From empirical data, it can be seen that if the volume ratio of the two metal layers is in the range of 75% to 85%, the degree of bending exceeds 0.4%.
As shown in the example of fig. 1, in the ceramic substrate 10, when the volume ratio of the metal layer 2 formed on the upper surface of the ceramic base 1 to the metal layer 3 formed on the lower surface of the ceramic base 1 is out of an appropriate range, a phenomenon of substrate bending occurs in a high temperature environment, and in this case, a case where the metal layer 3 has a larger volume is called negative bending (negative bending), and the negative bending occurs much more than the case of positive bending (positive bending) which is the opposite case.
Then, there is no economical limitation to increase the thickness of the ceramic substrate 1, and it is often difficult to maintain the same thickness ratio of the upper and lower metal layers 2 and 3 in design.
Prior art documents
(patent document 1) Korean registered patent publication No. 10-0731604
(patent document 2) Korean registered patent publication No. 10-1053141
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a ceramic substrate and a method for manufacturing the same, which can suppress a bowing (warping) phenomenon caused by a difference in volume occupied by upper and lower metal layers of a ceramic substrate, and can reduce a defective rate of the ceramic substrate by controlling areas of the upper and lower metal layers, particularly when thicknesses of the upper and lower metal layers on the ceramic substrate are the same.
The ceramic substrate of the present invention includes: a ceramic substrate; a first electrode layer formed on an upper portion of the ceramic substrate; and a second electrode layer formed on a lower portion of the ceramic substrate and satisfying the following formula (1):
(Here, V)1Denotes the volume, V, of the first electrode layer2Representing the volume of the second electrode layer).
In addition, the first electrode layer and the second electrode layer of the ceramic substrate have the same thickness and satisfy the following formula (2):
(Here, S1Denotes the area of the first electrode layer, S2Representing the area of the second electrode layer).
Here, either one or both of the first electrode layer and the second electrode layer includes a plurality of sub-electrode layers.
In addition, the sub-electrode layer separates the electrode layers by the slits.
The slits include one or more of a first slit for vertically separating the electrode layer and a second slit for horizontally separating the electrode layer.
Further, the ceramic substrate defined by the following formula (3) has a camber ratio (chamber ratio) R of 0.4% or less,
(here, T represents the shortest length from the highest position of the ceramic substrate to the plane when the ceramic substrate is placed on the plane, T represents the thickness of the ceramic substrate, and L represents the length of the ceramic substrate).
Here, a bonding layer is included between the ceramic substrate and the first electrode layer and between the ceramic substrate and the second electrode layer on either one side or both sides.
Further, the shortest length T from the highest position of the ceramic substrate to the plane and the ceramic substrate thickness T0Is the difference of (T-T)0) And length (L) of the ceramic substrate0) Satisfies the following formula (4):
T-t0≤0.004L0formula (4)
Here, the ceramic substrate is selected from Alumina, aluminum nitride, silicon nitride, and ZTA (Zirconia Toughened Alumina).
The ceramic substrate is used for any one of an automobile engine, a wind turbine, and a high-voltage DC transmission device.
The method for manufacturing a ceramic substrate of the present invention includes: a step of preparing a ceramic substrate; a step of forming a first electrode layer on an upper portion of the ceramic substrate; and a step of forming a second electrode layer on a lower portion of the ceramic substrate, and satisfying the following formula (1):
(Here, V)1Denotes the volume, V, of the first electrode layer2Representing the volume of the second electrode layer).
Further, the first electrode layer and the second electrode layer have the same thickness and satisfy the following formula (2):
(Here, S1Denotes the area of the first electrode layer, S2Representing the area of the second electrode layer).
Here, the ceramic substrate may be manufactured according to any one of an AMB (Active Metal Brazing) process and a DBC (Direct Bond Copper) process.
In addition, either one or both of the first electrode layer and the second electrode layer includes a plurality of sub-electrode layers.
In addition, either one or both of the first electrode layer and the second electrode layer are separated by the slit.
In addition, the method further includes a step of forming the sub-electrode layer on the ceramic substrate after separating one or both of the first electrode layer and the second electrode layer into the sub-electrode layers before forming the first electrode layer and the second electrode layer on the ceramic substrate.
In addition, after the first electrode layer and the second electrode layer are formed on the ceramic substrate, a step of separating either one or both of the first electrode layer and the second electrode layer into sub-electrode layers is further included.
Here, the step of separating the sub-electrode layers uses any one of a method of cutting, etching, and molding the first electrode layer and the second electrode layer.
In the case where the electrode layer is etched with an etching solution as the step of separating the electrode layer into the sub-electrode layers, the etching solution includes one or both of ferric chloride and copper chloride.
Further, the first electrode layer and the second electrode layer are formed on the ceramic substrate in such a manner that a camber ratio (camber) R defined by the following formula (3) is adjusted to 0.4 or less,
(here, T represents the shortest length from the highest position of the ceramic substrate to the plane when the ceramic substrate is placed on the plane, T represents the thickness of the ceramic substrate, and L represents the length of the ceramic substrate).
According to the ceramic substrate and the method for manufacturing the same of the present invention, there is an effect that the numerical value of the warpage of the ceramic substrate can be reduced by controlling the volume difference of the metal layers formed on the upper and lower portions of the ceramic base within a specific range or controlling the area of the upper and lower metal layers when the thicknesses of the upper and lower metal layers on the ceramic base are the same.
Accordingly, it is possible to manufacture a ceramic substrate that is not bent even in a high-temperature environment, and to improve the defective rate of the ceramic substrate, thereby improving the workability and productivity.
Drawings
Fig. 1 is a cross-sectional view showing a ceramic substrate in which a warp occurs.
FIG. 2 is a cross-sectional view showing a ceramic substrate of the present invention.
Fig. 3 is a top view and a bottom view of a ceramic substrate having an electrode layer formed on a ceramic base.
Fig. 4 and 5 are bottom views of a ceramic substrate having an electrode layer formed on a ceramic base.
Fig. 6 is a sectional view of a ceramic substrate for explaining parameters for measuring a camber ratio.
Fig. 7 is a graph for illustrating a region satisfying the camber ratio of the present invention.
Fig. 8 is a flowchart for explaining the method of manufacturing a ceramic substrate according to the present invention.
FIG. 9 is a photograph showing ceramic substrates of examples and comparative examples of the present invention.
Description of the reference symbols
Ceramic substrate: 1. 100 of a gas turbine
A first electrode layer: 2. 200 of a chemical formula
A sub-electrode layer: 200s1, 200s2, 200s3, 200s4, 200s5, 200s6, 200s7
A second electrode layer: 3. 300 of a glass fiber
Slit: slit1, slit2, slit3, slit4
Detailed Description
Ceramic substrate
As shown in fig. 2, the ceramic substrate 20 according to the present invention may include: a ceramic substrate 100; a first electrode layer 200 formed on an upper portion of the ceramic substrate 100; and a second electrode layer 300 formed on a lower portion of the ceramic substrate 100. Here, the volumes of the first electrode layer 200 and the second electrode layer 300 are within a certain range to suppress the warpage of the ceramic substrate 20.
For example, the volume of the first electrode layer 200 is defined as V1The volume of the second electrode layer 300 is defined as V2In the case of (2), when the following formula (1) is satisfied, the warpage of the ceramic substrate 20 can be significantly reduced.
In addition, the ceramic substrate 20 needs to be designed so that the first electrode layer 200 and the second electrode layer 300 have the same thickness. At this time, a difference in area may occur depending on the pattern shape of the first electrode layer 200 and the second electrode layer 300, and the necessity of preventing the ceramic substrate 20 from being bent becomes large.
For example, the area of the first electrode layer 200 is defined as S1The area of the second electrode layer 300 is defined as S2In the case of (2), the warpage of the ceramic substrate 20 can be significantly reduced when the following expression (2) is satisfied.
I.e., if S1And S2When the ratio of (b) is less than 85%, negative bending (negative bending) is likely to occur, and the bending ratio, which indicates how much bending occurs, exceeds 0.4%. Furthermore, if S1And S2When the ratio of (d) exceeds 115%, positive bending (positive bending) tends to occur. However, in the design of the ceramic substrate 20, the area of the second electrode layer 300 is similar to or larger than that of the first electrode layer 200An electrode layer 200 is very small, so if S1And S2When the ratio of (d) is 105% or less, the ceramic substrate 20 can be manufactured without positive bending (positive warping).
In addition, the ceramic substrate 20 may include a bonding layer (not shown) between the ceramic substrate 100 and the first electrode layer 200 or between the ceramic substrate 100 and the second electrode layer 300. For example, a bonding layer may be formed between the ceramic substrate 100 and the first electrode layer 200 and between the ceramic substrate 100 and the second electrode layer 300 at both sides, and a bonding layer may be included between the ceramic substrate 100 and the first electrode layer 200 and between the ceramic substrate 100 and the second electrode layer 300 at any one side.
The ceramic substrate 100 may be any one selected from Alumina, aluminum nitride, silicon nitride, ZTA (Zirconia Toughened Alumina), but is not limited thereto.
The first electrode layer 200 and the second electrode layer 300 may include one selected from silver (Ag), copper (Cu), tungsten (W), molybdenum (Mo), nickel (Ni), or an alloy thereof. Preferably, copper (Cu) or an alloy thereof may be used.
The first electrode layer is often designed as a connection electrode of an electronic component in a ceramic substrate in a fixed form such as shape, thickness, and length. Here, by adjusting the slits of the second electrode layer, the volume ratio or the area ratio of the first electrode layer and the second electrode layer can be controlled. That is, if a large number of slits are used in the second electrode layer and a large number of sub-electrode layers are formed, the volume and area of the second electrode layer are reduced, and the volume ratio and area ratio of the second electrode layer to the first electrode layer are reduced. Thus, in order to design the ceramic substrate, the second electrode layer may have various forms.
As shown in fig. 3(a), the first electrode layer formed on the upper portion of the ceramic substrate 100A may be formed with a plurality of sub-electrode layers 200s1, 200s2, 200s3, 200s4, 200s5, and the second electrode layer formed on the lower portion of the ceramic substrate 100B may be formed with a single electrode layer 300 s. Alternatively, as shown in fig. 3(B), the first electrode layer formed on the upper portion of the ceramic substrate 100A may be formed with a plurality of sub-electrode layers 200s1, 200s2, 200s3, and the second electrode layer formed on the lower portion of the ceramic substrate 100B may be formed with a plurality of sub-electrode layers 300s1, 300s2, 300s3, 300s 4.
In addition, as shown in fig. 4, the slits separating the regions of the sub-electrode layers may have various morphologies. For example, as shown in fig. 4(a), the single electrode layer may be separated into the sub-electrode layer 300s1 and the sub-electrode layer 300s2 by the slit1 which vertically separates the single electrode layer, and as shown in fig. 4(b), the single electrode layer may be separated into the sub-electrode layer 300s3 and the sub-electrode layer 300s4 by the slit2 which horizontally separates the single electrode layer.
As shown in fig. 4(c), the sub-electrode layers 300s5, 300s6, and 300s7 can be separated from each other by a slit3 that separates the single electrode layer left and right and a slit4 that separates the single electrode layer up and down.
In other words, the volume ratio and the area ratio of the second electrode layer are adjusted by separating the second electrode layer by the slit, so that the volume ratio and the area ratio of the first electrode layer and the second electrode layer can be controlled.
Then, as another example for adjusting the volume ratio and the area ratio of the second electrode layer, the volume ratio and the area ratio of the first electrode layer and the second electrode layer can be controlled by adjusting the interval of the slits while maintaining the form of the sub-electrode layer.
In other words, if the slit interval of the second electrode layer is arranged to be wide, the volume and area of the second electrode layer are reduced, and the volume and area of the second electrode layer relative to the first electrode layer are reduced.
As shown in fig. 5(a), the slit3a for separating the single electrode layer left and right and the slit4a for separating the single electrode layer up and down can separate the sub-electrode layers 300sa5, 300sa6, 300sa7 at the same slit interval, and as shown in fig. 5(b), in order to further reduce the volume and area of the second electrode layer, the sub-electrode layers 300sb5, 300sb6, 300sb7 can be separated by the slit3b and slit4b having a wider interval than the slit3a and slit4a shown in fig. 5 (a).
As shown in fig. 5(c), the sub electrode layers 300sc5, 300sc6, and 300sc7 can be separated using slits slit3a and slit4b at various intervals.
Although fig. 4 and 5 illustrate slits that separate the electrode layer into sub-electrode layers and separate the electrode layer vertically or horizontally, the slits may have an inclined shape or a curved shape.
As a measurement parameter related to the degree of curvature of the ceramic substrate, a degree of curvature ratio (chamber ratio) defined by the following formula (3) may be used.
That is, as shown in FIG. 6, when the ceramic substrate is placed on a plane, the shortest length T from the highest position of the ceramic substrate to the plane and the thickness T of the ceramic substrate are determined0Length L of ceramic substrate0The measurement is performed and substituted into equation (3) above, whereby the camber ratio can be measured. Here, in order to obtain a more accurate value of the camber ratio, a plurality of points may be measured and an average value thereof may be used.
Preferably, the camber ratio R of the present invention may be 0.4% or less, more preferably 0.2% or less, and most preferably 0.1% or less. By satisfying the above equations (1) and (2), the bending ratio R of the present invention can be satisfied.
The camber ratio, which is a parameter relating to the occurrence of the bowing of the ceramic substrate, differs depending on the relationship between the length and the thickness of the ceramic substrate. That is, when the ceramic substrate is bent, the difference (T-T) between the shortest length from the highest position of the ceramic substrate to the flat surface and the thickness of the ceramic substrate0) Length L of ceramic substrate0When the relationship (2) satisfies the following expression (4), the occurrence of warpage of the ceramic substrate is reduced, and the defect rate is reduced.
T-t0≤0.004L0Formula (4)
In the ceramic substrate of the present invention, when the ceramic substrate is bent from the thickness of the ceramic substrate, the difference between the shortest length from the highest position of the ceramic substrate to the flat surface and the thickness of the ceramic substrate, that is, (T-T)0) Preferably, 0.004L of0Hereinafter, more preferably, 0.002L may be used0Hereinafter, most preferably, 0.001L may be used0The following.
In addition, in relation to the camber ratio R, (T-T) is0) And L0Is illustrated in fig. 7.
As shown in FIG. 7, when the ceramic substrate is bent in the thickness thereof, the difference between the shortest length from the highest position of the ceramic substrate to the flat surface and the thickness of the ceramic substrate, i.e., (T-T)0) Preferably 0.004L of0In the following region (I), the amount of the compound is more than 0.004L0The region (II) has a problem of defects due to bending.
Method for manufacturing ceramic substrate
The following describes a method for manufacturing a ceramic substrate.
As shown in fig. 8, the method for manufacturing a ceramic substrate of the present invention may include: a step S10 of preparing a ceramic substrate; a step S20 of preparing a first electrode layer and a second electrode layer satisfying the following expression (1); and a step S30 of forming a first electrode layer on the upper portion of the ceramic substrate and a second electrode layer on the lower portion of the ceramic substrate,
(Here, V)1Denotes the volume, V, of the first electrode layer2Representing the volume of the second electrode layer).
In addition, in the case where the first electrode layer and the second electrode layer have the same thickness, as shown in fig. 8(b), the method for manufacturing a ceramic substrate according to the present invention may include: a step S10 of preparing a ceramic substrate; a step S25 of preparing a first electrode layer and a second electrode layer satisfying the following expression (2); and a step S30 of forming a first electrode layer on the upper portion of the ceramic substrate and a second electrode layer on the lower portion of the ceramic substrate,
(Here, S1Denotes the area of the first electrode layer, S2Representing a second electricityThe area of the pole layer).
Here, before forming the first electrode layer and the second electrode layer on the ceramic substrate, a step of separating one or both of the first electrode layer and the second electrode layer into sub-electrode layers and then forming the sub-electrode layers on the ceramic substrate may be included.
In the step of separating the sub-electrode layers, any of cutting, etching, and casting the first electrode layer and the second electrode layer may be used, but the use of a casting mold has an advantage of increasing process efficiency in terms of productivity. In the case of manufacturing a fine-patterned metal layer, the electrode layer may be etched by an etching solution. The etching solution may include either one or both of ferric chloride (ferric chloride) and copper chloride (copper chloride). CuCl (I or CuCl) can be used as copper chloride2(Ⅱ。
In the step of forming the sub-electrode layer on the ceramic substrate, the sub-electrode layer may be formed before forming the first electrode layer and the second electrode layer on the ceramic substrate, but the sub-electrode layer may be formed by any method of cutting, etching, and molding either one or both of the first electrode layer and the second electrode layer after forming the first electrode layer and the second electrode layer on the ceramic substrate.
(Experimental example)
In examples 1 to 4, copper metal layers were stacked on the upper and lower portions of the ceramic base and ceramic substrates having a thickness of about 2mm were manufactured. The upper copper metal layer and the lower copper metal layer of the ceramic substrate use the same thickness. The upper copper metal layer may be composed of a plurality of copper sub-electrode layers having an area of 596.0242mm2. The lower copper metal layer may also be composed of multiple copper sub-electrode layers with an area of 669.3893mm2. The area ratio of the upper copper metal layer to the lower copper metal layer was 89.04%.
As shown in table 1 below, it was found that the camber ratio was 0.4% or less in examples 1 to 4, and the occurrence of the camber of the ceramic substrate was suppressed. As shown in the photograph of the ceramic substrate of fig. 9(a), it was confirmed that little or no warpage was generated in the ceramic substrates of examples 1 to 4.
[ Table 1]
Example 1
Example 2
Example 3
Example 4
T(mm)
2.132
2.158
2.172
2.095
t0(mm)
1.982
2.015
2.034
2.001
T-t0(mm)
0.15
0.143
0.138
0.094
L0(mm)
37.5
36.7
51.1
36.2
R(％)
0.40
0.39
0.27
0.26
In addition, in comparative examples 1 to 4, copper metal layers were stacked on the upper and lower portions of the ceramic base and ceramic substrates having a thickness of about 2mm were manufactured. The upper copper metal layer and the lower copper metal layer of the ceramic substrate use the same thickness. The upper copper metal layer may be composed of a plurality of copper sub-electrode layers having an area of 596.0242mm2. The lower copper metal layer consists of a single copper electrode layer with an area of 759.1348mm2. The area ratio of the upper copper metal layer to the lower copper metal layer was 78.5%.
As shown in table 2 below, it is understood that in comparative examples 1 to 4, the warpage ratio is shown to be a value greater than 0.61%, and the ceramic substrate is greatly warped. As shown in the photograph of the ceramic substrate in fig. 9(b), it was confirmed that the ceramic substrates of comparative examples 1 to 4 were warped, and thus a defect occurred.
[ Table 2]
Comparative example1
Comparative example 2
Comparative example 3
Comparative example 4
T(mm)
2.291
2.258
2.335
2.31
t0(mm)
2.035
2.047
2.047
2.037
T-t0(mm)
0.256
0.211
0.288
0.273
L0(mm)
35.6
34.6
34.7
34.6
R(％)
0.72
0.61
0.83
0.79
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